Recent Progress of Two-Dimensional Thermoelectric Materials

Into the Void: Single Nanopore in Colloidally Synthesized Bi2Te3 Nanoplates with Ultralow Lattice Thermal Conductivity

Bi2Te3 is a well-known thermoelectric material that was first investigated in the 1960s, optimized over decades, and is now one of the highest performing room-temperature thermoelectric materials to-date. Herein, we report on the colloidal synthesis, growth mechanism, and thermoelectric properties of Bi2Te3 nanoplates with a single nanopore in the center. Analysis of the reaction products during the colloidal synthesis reveals that the reaction progresses via a two-step nucleation and epitaxial growth: first of elemental Te nanorods and then the binary Bi2Te3 nanoplate growth. The rates of epitaxial growth can be controlled during the reaction, thus allowing the formation of a single nanopore in the center of the Bi2Te3 nanoplates. The size of the nanopore can be controlled by changing the pH of the reaction solution, where larger pores with diameter of ∼50 nm are formed at higher pH and smaller pores with diameter of ∼16 nm are formed at lower pH. We propose that the formation of the single nanopore is mediated by the Kirkendall effect and thus the reaction conditions allow for the selective control over pore size. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The single nanopores have a thin amorphous layer at the edge, revealed by transmission electron microscopy. Thermoelectric properties of the pristine and single-nanopore Bi2Te3 nanoplates were measured in the parallel and perpendicular directions. These properties reveal strong anisotropy with a significant reduction to thermal conductivity and increased electrical resistivity in the perpendicular direction due to the higher number of nanoplate and nanopore interfaces. Furthermore, Bi2Te3 nanoplates with a single nanopore exhibit ultralow lattice thermal conductivity values, reaching ∼0.21 Wm-1K-1 in the perpendicular direction. The lattice thermal conductivity was found to be systematically lowered with pore size, allowing for the realization of a thermoelectric figure of merit, zT of 0.75 at 425 K for the largest pore size.

Recent Advances in Non-Ti MXenes: Synthesis, Properties, and Novel Applications

One of the most fascinating 2D nanomaterials (NMs) ever found is various members of MXene family. Among them, the titanium-based MXenes, with more than 70% of publication-related investigations, are comparatively well studied, producing fundamental foundation for the 2D MXene family members with flexible properties, familiar with a variety of advanced novel technological applications. Nonetheless, there are still more candidates among transitional metals (TMs) that can function as MXene NMs in ways that go well beyond those that are now recognized. Systematized details of the preparations, characteristics, limitations, significant discoveries, and uses of the novel M-based MXenes (M-MXenes), where M stands for non-Ti TMs (M = Sc, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, W, and Lu), are given. The exceptional qualities of the 2D non-Ti MXene outperform standard Ti-MXene in several applications. There is many advancement in top-down as well as bottom-up production of MXenes family members, which allows for exact control of the M-characteristics MXene NMs to contain cutting-edge applications. This study offers a systematic evaluation of existing research, covering everything in producing complex M-MXenes from primary limitations to the characterization and selection of their applications in accordance with their novel features. The development of double metal combinations, extension of additional metal candidates beyond group-(III-VI)B family, and subsequent development of the 2D TM carbide/TMs nitride/TM carbonitrides to 2D metal boride family are also included in this overview. The possibilities and further recommendations for the way of non-Ti MXene NMs are in the synthesis of NMs will discuss in detail in this critical evaluation.

Impact of Spin-Entropy on the Thermoelectric Properties of a 2D Magnet

Heat-to-charge conversion efficiency of thermoelectric materials is closely linked to the entropy per charge carrier. Thus, magnetic materials are promising building blocks for highly efficient energy harvesters as their carrier entropy is boosted by a spin degree of freedom. In this work, we investigate how this spin-entropy impacts heat-to-charge conversion in the A-type antiferromagnet CrSBr. We perform simultaneous measurements of electrical conductance and thermocurrent while changing magnetic order using the temperature and magnetic field as tuning parameters. We find a strong enhancement of the thermoelectric power factor at around the Néel temperature. We further reveal that the power factor at low temperatures can be increased by up to 600% upon applying a magnetic field. Our results demonstrate that the thermoelectric properties of 2D magnets can be optimized by exploiting the sizable impact of spin-entropy and confirm thermoelectric measurements as a sensitive tool to investigate subtle magnetic phase transitions in low-dimensional magnets.

The Latest Advances in Ink-Based Nanogenerators: From Materials to Applications

Nanogenerators possess the capability to harvest faint energy from the environment. Among them, thermoelectric (TE), triboelectric, piezoelectric (PE), and moisture-enabled nanogenerators represent promising approaches to micro-nano energy collection. These nanogenerators have seen considerable progress in material optimization and structural design. Printing technology has facilitated the large-scale manufacturing of nanogenerators. Although inks can be compatible with most traditional functional materials, this inevitably leads to a decrease in the electrical performance of the materials, necessitating control over the rheological properties of the inks. Furthermore, printing technology offers increased structural design flexibility. This review provides a comprehensive framework for ink-based nanogenerators, encompassing ink material optimization and device structural design, including improvements in ink performance, control of rheological properties, and efficient energy harvesting structures. Additionally, it highlights ink-based nanogenerators that incorporate textile technology and hybrid energy technologies, reviewing their latest advancements in energy collection and self-powered sensing. The discussion also addresses the main challenges faced and future directions for development.

Two-dimensional Mo1-xB2 with ordered metal vacancies obtained for advanced thermoelectric applications based on first-principles calculations

The study and development of high thermoelectric properties is crucial for the next generation of microelectronic and wearable electronics. Derived from the recent experimental realization of layers of transition metal molybdenum and boride, we report the theoretical realization of advanced thermoelectric properties in two-dimensional (2D) transition metal boride Mo1-xB2 (x = 0, 0.05, 0.10, 0.125, 0.15)-based defect sheets. The introduction of metal vacancies results in stronger d-p exchange interactions and hybridization between the Mo-d and B-p atoms. Meanwhile, the ordered metal vacancies enabled transition metal borides (n-type Mo0.9B2) to widen the d-bandwidth and raise the d-band center, leading to a relatively high carrier mobility of 3262 cm2 V-1 s-1 and conductivity twice that of a bug-free n-type MoB2 layer, which indicates that it presents good electronic and thermal transport properties. Furthermore, investigations of the thermoelectric performance exhibit a maximum ZT of up to 3.29, which is superior to those of currently reported 2D materials. Modulation by defect engineering suggests that 2D transition metal boride sheets with ordered metal vacancies have promising applications in microelectronics, wearable electronics and thermoelectric devices.

Monolayer 1T-Ag6S2 with Excellent Thermoelectric Properties

We obtained a new material called monolayer 1T-Ag6S2 by replacing metal atoms in 1T phase transition-metal dichalcogenide sulfides (TMDs) with octahedral Ag6 clusters. Subsequently, the thermoelectric transport properties of monolayer 1T-Ag6S2 were systematically investigated using first-principles calculations and the generalized gradient approximation (GGA-PBE) exchange correlation functional. The findings demonstrate that monolayer 1T-Ag6S2 displays characteristics of a wide-bandgap semiconductor, with a bandgap of 2.48 eV. Notably, the incorporation of Ag6 clusters disrupts the structural symmetry, effectively enhancing the electronic structure and phonon properties of the material. Due to the flat valence band near the Fermi level, the extended relaxation time of the hole results in a greater effective mass compared to the electron, leading to a significant increase in the Seebeck coefficient. Under optimal doping conditions, the power factor of monolayer 1T-Ag6S2 can achieve 14.9 mW/mK2 at 500 K. The intricate crystal structure induces phonon path bending, reduces the overall frequency of phonon vibrations (<10 THz), and causes hybridization of low-frequency optical and acoustic branches, resulting in remarkably low lattice thermal conductivity (0.20 and 0.17 W/mK along the x and y axes at 500 K, respectively). The monolayer 1T-Ag6S2 demonstrates a remarkably high figure of merit ZT of 3.14 (3.15) on the x (y) axis at 500 K, significantly higher than those of conventional TMD materials. Such excellent thermoelectric properties suggest that monolayer 1T-Ag6S2 is a promising thermoelectric (TE) material. Our work reveals the deep mechanism of cluster substitution to optimize the thermoelectric properties of materials and provides a useful reference for subsequent research.

Engineering Symmetry Breaking in Twisted MoS2-MoSe2 Heterostructures for Optimal Thermoelectric Performance

Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.

Strain-Assisted Phase Transformation in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional polymorphic transition-metal dichalcogenides have drawn attention for their diverse applications. This work explores the complex interplay between strain-induced phase transformation and crack growth behavior in annealed nanocrystalline MoS2. Employing molecular dynamics (MD) simulations, this research focuses on the effect of grain size, misorientation, and annealing on phase evolution and their effects on the mechanical behavior of MoS2. First, examining phase transformation in monocrystalline MoS2 under various stress states reveals distinct behaviors depending on the initial phase (1T or 2H) and crystallographic orientation with respect to loading directions. Notably, transformation from a layered hexagonal to a body-centered tetragonal structure is more noticeable when strain in a zigzag direction is applied to the 1T sample. As such, single crystalline MoS2 with a 1T phase exhibits a 16% lower fracture stress in the armchair direction compared to that with a 2H phase. On the other hand, the 1T phase shows a 5% higher phonon lifetime compared to the 2H phase with similar phonon group velocities. Next, the influence of thermal energy and mechanical stress on the phase transformation of nanocrystalline MoS2 is investigated through annealing and quenching cycles, uncovering 60 and 44% irreversibility of phase transformation for an average grain size of 3 and 11 nm, respectively. Besides, the evolution of nanocrystalline samples with different initial phases and grain sizes is studied under uniaxial and biaxial stress. This study shows an inverse pseudo-Hall-Petch effect with exponents of 0.11 and 0.09 for 2H and 1T, respectively. The study reveals that phase transformation can occur concurrently with crack initiation and propagation with the 1T phase exhibiting a 19% lower grain size sensitivity of fracture stress compared to the 2H phase.

Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1-xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1-xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1-xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics.

Bi-based bracelet-like monolayer with negative in-plane Poisson's ratio and enhanced photocatalytic performance: a first-principles study

Auxetic materials are in high demand for advanced applications due to their relatively rare negative Poisson's ratio in two-dimensional materials. This study investigates the structural, mechanical, electronic, optical and photocatalytic properties of the AsBiTe3monolayer(ML) using first-principles calculations. Through analysis of phonon dispersion curves,ab-initiomolecular dynamics simulations, and Born conditions, we have confirmed the thermal, dynamic, and mechanical stability of the AsBiTe3monolayer. The study of the mechanical properties of this material revealed significant anisotropy and a bidirectional in-plane negative Poisson's ratio (NPR). In addition, electronic band structures calculated, with and without spin-orbit coupling (SOC) using the HSE functional, indicate that this monolayer exhibits the characteristics of an indirect-gap semiconductor around 1.17 and 1.32 eV, respectively. Notably, by assessing the optical properties of AsBiTe3monolayer, it has been found that this monolayer has a strong light-harvesting capability with an absorption coefficient higher than 105 cm-1in the visible region. Fascinatingly, under a biaxial 1%and 4%tensile and -2% compressive strain, the band edge of the AsBiTe3monolayer extends across the redox potential of water at pH = 0, 7 and 14, respectively. This suggests that this monolayer holds promise as a potential material for catalytic water splitting. These results should inspire further experimental and theoretical research, aimed at fully exploring the potential applications of this new class of 2D materials.

Two-Dimensional Transition Metal Boron Cluster Compounds (MBnenes) with Strain-Independent Room-Temperature Magnetism

Two-dimensional (2D) metal borides (MBenes) with unique electronic structures and physicochemical properties hold great promise for various applications. Given the abundance of boron clusters, we proposed employing them as structural motifs to design 2D transition metal boron cluster compounds (MBnenes), an extension of MBenes. Herein, we have designed three stable MBnenes (M4(B12)2, M = Mn, Fe, Co) based on B12 clusters and investigated their electronic and magnetic properties using first-principles calculations. Mn4(B12)2 and Co4(B12)2 are semiconductors, while Fe4(B12)2 exhibits metallic behavior. The unique structure in MBnenes allows the coexistence of direct exchange interactions between adjacent metal atoms and indirect exchange interactions mediated by the clusters, endowing them with a Néel temperature (TN) up to 772 K. Moreover, both Mn4(B12)2 and Fe4(B12)2 showcase strain-independent room-temperature magnetism, making them potential candidates for spintronics applications. The MBnenes family provides a fresh avenue for the design of 2D materials featuring unique structures and excellent physicochemical properties.

Constructing quasi-layered and self-hole doped SnSe oriented films to achieve excellent thermoelectric power factor and output power density

Thermoelectric (TE) technology can achieve the mutual conversion between electric energy and waste heat, and it has exhibited great prospects in multifunctional energy applications to alleviate the energy crisis. In the recent decade, SnSe has been explored widely because of its potentially high energy harvesting efficiency, green nature, and low cost. However, the relatively poor power factor (PF) derived from the intrinsic low carrier concentration (∼1017 cm-3) limits the output power density of the stoichiometric SnSe devices. Therefore, the advancement of novel optimization strategies for controlling carrier concentration is of utmost importance. Besides, compared with 3D bulks, 2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction and application of TE micro- and nano-devices. In this study, post-selenization technology were applied to increase the carrier concentration of the a-axis oriented SnSe epitaxial films utilizing the charge transfer and self-hole doped effects. The quasi-layered and self-hole doped films exhibited a high power factor of ∼5.9 µW cm-1 K-2 at 600 K along the in-plane direction when the carrier concentration is enhanced to ∼1018 cm-3 by increasing the selenization time to ∼20 min. The TE generator composed of four P-type film legs demonstrated the ultrahigh maximum power density of ∼83, ∼838 µW cm-2 at the temperature difference of ∼50 and ∼90 K, respectively. Post-selenization can effectively optimize the carrier concentration of SnSe-based materials, which is also feasible to other anion deficient TE films.

Janus 2H-MXTe (M = Zr, Hf; X = S, Se) monolayers with outstanding thermoelectric properties and low lattice thermal conductivities

Two-dimensional (2D) materials have been one of the most popular objects in the research field of thermoelectric (TE) materials and have attracted substantial attention in recent years. Inspired by the synthesized 2H-MoSSe and numerous theoretical studies, we systematically investigated the electronic, thermal, and TE properties of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers by using first-principles calculations. The phonon dispersion curves and AIMD simulations confirm the thermodynamic stabilities. Moreover, Janus 2H-MXTe were evaluated as indirect band-gap semiconductors with band gaps ranging from 0.56 to 0.90 eV using the HSE06 + SOC method. To evaluate the TE performance, firstly, we calculated the temperature-dependent carrier relaxation time with acoustic phonon scattering τac, impurity scattering τimp, and polarized scattering τpol. Secondly, the calculation of lattice thermal conductivity (κl) shows that these monolayers possess relatively poor κl with values of 3.4-5.4 W mK-1 at 300 K, which is caused by the low phonon lifetime and group velocity. After computing the electronic transport properties, we found that the n-type doped Janus 2H-MXTe monolayers exhibit a high Seebeck coefficient exceeding 200 μV K-1 at 300 K, resulting in a high TE power factor. Eventually, combining the electrical and thermal conductivities, the optimal dimensionless figure of merit (zT) at 300 K (900 K) can be obtained, which is 0.94 (3.63), 0.51 (2.57), 0.64 (2.72), and 0.50 (1.98) for n-type doping of ZrSeTe, HfSeTe, ZeSTe, and HfSTe monolayers. Particularly, the ZrSeTe monolayer shows the best TE performance with the maximal zT value. These results indicate the excellent application potential of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers in TE materials.

Engineering anisotropy in 2D transition metal dichalcogenides via heterostructures

Two-dimensional (2D) semiconductors featuring low-symmetry crystal structures hold an immense potential for the design of advanced optoelectronic devices, leveraging their inherent anisotropic attributes. While the synthesis techniques for transition metal dichalcogenides (TMDs) have matured, a promising avenue emerges: the induction of anisotropy within symmetric TMDs through interlayer van der Waals coupling engineering. Here, we unveil the creation of heterostructures (HSs) by stacking highly symmetric MoSe2 with low-symmetry ReS2, introducing artificial anisotropy into monolayer MoSe2. Through a meticulous analysis of angle-dependent photoluminescence (PL) spectra, we discern a remarkable anisotropic intensity ratio of approximately 1.34. Bolstering this observation, the angle-resolved Raman spectra provide unequivocal validation of the anisotropic optical properties inherent to MoSe2. This intriguing behavior can be attributed to the in-plane polarization of MoSe2, incited by the deliberate disruption of lattice symmetry within the monolayer MoSe2 structure. Collectively, our findings furnish a conceptual blueprint for engineering both isotropic and anisotropic HSs, thereby unlocking an expansive spectrum of applications in the realm of high-performance optoelectronic devices.

Unraveling the Emerging Photocatalytic, Thermoelectric, and Topological Properties of Intercalated Architecture MZX (M = Ga and In; Z = Si, Ge and Sn; X = S, Se, and Te) Monolayers

The continuous advancements in studying two-dimensional (2D) materials pave the way for groundbreaking innovations across various industries. In this study, by employing density functional theory calculations, we comprehensively elucidate the electronic structures of MZX (M = Ga and In; Z = Si, Ge, and Sn; X = S, Se, and Te) monolayers for their applications in photocatalytic, thermoelectric, and spintronic fields. Interestingly, GaSiS, GaSiSe, InSiS, and InSiSe monolayers are identified to be efficient photocatalysts for overall water splitting with band gaps close to 2.0 eV, suitable band edge positions, and excellent optical harvest ability. In addition, the InSiTe monolayer exhibits a ZT value of 1.87 at 700 K, making it highly appealing for applications in thermoelectric devices. It is further highlighted that GaSnTe, InSnS, and InSnSe monolayers are predicted to be 2D topological insulators (TIs) with bulk band gaps of 115, 54, and 152 meV, respectively. Current research expands the family of 2D GaGeTe materials and establishes a path toward the practical utilization of MZX monolayers in energy conversion and spintronic devices.

The Tunable Electronic and Optical Properties of Two-Dimensional Bismuth Oxyhalides

Two-dimensional (2D) bismuth oxyhalides (BiOX) have attracted much attention as potential optoelectronic materials. To explore their application diversity, we herewith systematically investigate the tunable properties of 2D BiOX using first-principles calculations. Their electronic and optical properties can be modulated by changing the number of monolayers, applying strain, and/or varying the halogen composition. The band gap shrinks monotonically and approaches the bulk value, the optical absorption coefficient increases, and the absorption spectrum redshifts as the layer number of 2D BiOX increases. The carrier transport property can be improved by applying tensile strain, and the ability of photocatalytic hydrogen evolution can be obtained by applying compressive strain. General strain engineering will be effective in linearly tuning the band gap of BiOX in a wide strain range. Strain, together with halogen composition variation, can tune the optical absorption spectrum to be on demand in the range from visible to ultraviolet. This suggests that 2D BiOX materials can potentially serve as tunable novel photodetectors, can be used to improve clean energy techniques, and have potential in the field of flexible optoelectronics.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Thermoelectric Properties of the Corbino Disk in Graphene

Thermopower and the Lorentz number for an edge-free (Corbino) graphene disk in the quantum Hall regime is calculated within the Landauer-Büttiker formalism. By varying the electrochemical potential, we find that amplitude of the Seebeck coefficient follows a modified Goldsmid-Sharp relation, with the energy gap defined by the interval between the zero and the first Landau levels in bulk graphene. An analogous relation for the Lorentz number is also determined. Thus, these thermoelectric properties are solely defined by the magnetic field, the temperature, the Fermi velocity in graphene, and fundamental constants including the electron charge, the Planck and Boltzmann constants, being independent of the geometric dimensions of the system. This suggests that the Corbino disk in graphene may operate as a thermoelectric thermometer, allowing to measure small temperature differences between two reservoirs, if the mean temperature magnetic field are known.

Wearable sensors for telehealth based on emerging materials and nanoarchitectonics

Wearable sensors have made significant progress in sensing physiological and biochemical markers for telehealth. By monitoring vital signs like body temperature, arterial oxygen saturation, and breath rate, wearable sensors provide enormous potential for the early detection of diseases. In recent years, significant advancements have been achieved in the development of wearable sensors based on two-dimensional (2D) materials with flexibility, excellent mechanical stability, high sensitivity, and accuracy introducing a new approach to remote and real-time health monitoring. In this review, we outline 2D materials-based wearable sensors and biosensors for a remote health monitoring system. The review focused on five types of wearable sensors, which were classified according to their sensing mechanism, such as pressure, strain, electrochemical, optoelectronic, and temperature sensors. 2D material capabilities and their impact on the performance and operation of the wearable sensor are outlined. The fundamental sensing principles and mechanism of wearable sensors, as well as their applications are explored. This review concludes by discussing the remaining obstacles and future opportunities for this emerging telehealth field. We hope that this report will be useful to individuals who want to design new wearable sensors based on 2D materials and it will generate new ideas.

Design, synthesis, and application of some two-dimensional materials

Two-dimensional (2D) materials are widely used as key components in the fields of energy conversion and storage, optoelectronics, catalysis, biomedicine, etc. To meet the practical needs, molecular structure design and aggregation process optimization have been systematically carried out. The intrinsic correlation between preparation methods and the characteristic properties is investigated. This review summarizes the recent research achievements of 2D materials in the aspect of molecular structure modification, aggregation regulation, characteristic properties, and device applications. The design strategies to fabricate functional 2D materials starting from precursor molecules are introduced in detail referring to organic synthetic chemistry and self-assembly technology. It provides important research ideas for the design and synthesis of related materials.

Recent Progress in Emerging Novel MXenes Based Materials and their Fascinating Sensing Applications

Early transition metals based 2D carbides, nitrides and carbonitrides nanomaterials are known as MXenes, a novel and extensive new class of 2D materials family. Since the first accidently synthesis based discovery of Ti₃ C₂ in 2011, more than 50 additional compositions have been experimentally reported, including at least eight distinct synthesis methods and also more than 100 stoichiometries are theoretically studied. Due to its distinctive surface chemistry, graphene like shape, metallic conductivity, high hydrophilicity, outstanding mechanical and thermal properties, redox capacity and affordable with mass-produced nature, this diverse MXenes are of tremendous scientific and technological significance. In this review, first we'll come across the MXene based nanomaterials possible synthesis methods, their advantages, limitations and future suggestions, new chemistry related to their selected properties and potential sensing applications, which will help us to explain why this family is growing very fast as compared to other 2D families. Secondly, problems that help to further improve commercialization of the MXene nanomaterials based sensors are examined, and many advances in the commercializing of the MXene nanomaterials based sensors are proposed. At the end, we'll go through the current challenges, limitations and future suggestions.

High throughput calculations for a dataset of bilayer materials

Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.

High Thermoelectric Performance and Ultrahigh Flexibility Ag2S1-xSex film on a Nylon Membrane

Flexible thermoelectric (TE) generators have recently attracted increasing attention as they have the potential to power wearable devices using the temperature difference between the human body and the environment. Ag₂S is recently reported to have plasticity near room temperature; however, it has very low electrical conductivity, leading to its poor TE property. Here, to improve the TE property, different amounts of Se (Se/Ag₂S molar ratios being 0.4, 0.5, and 0.6) solid solution-substituted Ag₂S films on a nylon membrane are prepared by combing wet-chemical synthesis, vacuum filtration, and hot-pressing. The film (Se/Ag₂S molar ratio = 0.6) exhibits a better TE performance with a power factor of 477.4 ± 15.20 μW m^-1 K^-2 at room temperature, which is comparable to that of bulk Ag₂S_1-xSe_x. In addition, the film possesses excellent flexibility (only ∼5.4% decrease in electrical conductivity after 2000 times bending along a rod with a radius of 4 mm). The power density of a 6-leg TE generator assembled with the film is 6.6 W/m² under a temperature difference of 28.8 K. This work provides a facile new route to Ag₂S-based TE films with low cost, high TE performance, and ultrahigh flexibility.

Nanomaterials and Devices for Harvesting Ambient Electromagnetic Waves

This manuscript presents an overview of the implications of nanomaterials in harvesting ambient electromagnetic waves. We show that the most advanced electromagnetic harvesting devices are based on oxides with a thickness of few nanometers, carbon nanotubes, graphene, and molybdenum disulfide thanks to their unique physical properties. These tiny objects can produce in the years to come a revolution in the harvesting of energy originating from the Sun, heat, or the Earth itself.

Nanoheterojunction-Mediated Thermoelectric Strategy for Cancer Surgical Adjuvant Treatment and β-Elemene Combination Therapy

As an indispensable strategy for tumor treatment, surgery may cause two major challenges: tumor recurrence and wound infection. Here, a thermoelectric therapeutic strategy is provided as either an independent cancer therapy or surgical adjuvant treatment. Bi_0.5 Sb_1.5 Te₃ (BST) and Bi₂ Te_2.8 Se_0.2 (BTS) nanoplates composed of Z-scheme thermoelectric heterojunction (BST/BTS) are fabricated via a two-step hydrothermal processes. The contact between BST and BTS constructs an interfacial electric field due to Fermi energy level rearrangement, guiding electrons in the conductive band (CB) of BTS combine with the holes in the valance band (VB) of BST, leaving stronger reduction/oxidation potentials of electrons and holes in the CB of BST and the VB of BTS. Moreover, under a mild temperature gradient, another self-built-in electric field is formed facilitating the migration of electrons and holes to their surfaces. Based on the PEGylated BST/BTS heterojunction, a novel thermoelectric therapy platform is developed through intravenous injection of BST/BTS and external cooling of the tumors. This thermoelectric strategy is also proved effective for combination cancer therapy with β-elemene. Moreover, the combination of heterojunction and hydrogel is administrated on the wound after surgery, achieving efficient residual tumor treatment and antibacterial effects.

Porous carbon-based metal-free monolayers towards highly stable and flexible wearable thermoelectrics and microelectronics

In the search for high mechanical strength and flexibility, ultrahigh semiconducting speed is crucial for the next generation of microelectronic and wearable electronics. Herein, we propose two 2D graphene-like macrocyclic complex carbon-based monolayers, namely g-MC-A and g-MC-B. Both monolayers are dynamically stable according to phonon dispersion and ab initio molecular dynamics simulations. The yield stress of these two layers reaches half that of graphene, revealing remarkably high mechanical strength. Besides, both monolayers are semiconductors. The electron mobility of g-MC-A is high: up to 10⁴ cm² V^-1 s^-1, comparable to black phosphorene. Furthermore, these two monolayers exhibit excellent inherent conductivity with anisotropic characteristics. Interestingly, an extra valley is observed near the conduction band edge for both layers, further simulation predicted both metal-free monolayers will exhibit ZT > 1, implying high thermoelectric performance. Therefore, these two C-based metal-free layers have promising applications in mechanical enhancement, microelectronics, wearable electronics and thermoelectric devices.

Black Phosphorous Aptamer-based Platform for Biomarker Detection

Black phosphorus nanostructures (nano-BPs) mainly include BP nanosheets (BP NSs), BP quantum dots (BPQDs), and other nano-BPs-based particles at nanoscale. Firstly discovered in 2014, nano-BPs are one of the most popular nanomaterials. Different synthesis methods are discussed in short to understand the basic concepts and developments in synthesis. Exfoliated nano-BPs, i.e. nano-BPs possess high surface area, high photothermal conversion efficacy, excellent biocompatibility, high charge carrier mobility (~1000 cm^-2V^-1s^-1), thermal conductivity of 86 Wm^-1K^-1; and these properties make it a highly potential candidate for fabrication of biosensing platform. These properties enable nano-BPs to be promising photothermal/drug delivery agents as well as in electrochemical data storage devices and sensing devices; and in super capacitors, photodetectors, photovoltaics and solar cells, LEDs, super-conductors, etc. Early diagnosis is very critical in the health sector scenarios. This review attempts to highlight the attempts made towards attaining stable BP, BP-aptamer conjugates for successful biosensing applications. BP-aptamer- based platforms are reviewed to highlight the significance of BP in detecting biological and physiological markers of cardiovascular diseases and cancer; to be useful in disease diagnosis and management.

Multidiscipline Applications of Triboelectric Nanogenerators for the Intelligent Era of Internet of Things

In the era of 5G and the Internet of things (IoTs), various human-computer interaction systems based on the integration of triboelectric nanogenerators (TENGs) and IoTs technologies demonstrate the feasibility of sustainable and self-powered functional systems. The rapid development of intelligent applications of IoTs based on TENGs mainly relies on supplying the harvested mechanical energy from surroundings and implementing active sensing, which have greatly changed the way of human production and daily life. This review mainly introduced the TENG applications in multidiscipline scenarios of IoTs, including smart agriculture, smart industry, smart city, emergency monitoring, and machine learning-assisted artificial intelligence applications. The challenges and future research directions of TENG toward IoTs have also been proposed. The extensive developments and applications of TENG will push forward the IoTs into an energy autonomy fashion.

Enhanced Thermoelectric Performance in Black Phosphorene via Tunable Interlayer Twist

Twist-angle two-dimensional (2D) systems are attractive in their exotic and tunable properties by the formation of the moiré superlattices, allowing easy access to manipulating intrinsic electrical and thermal properties. Here, the angle-dependent thermoelectric properties of twisted bilayer black phosphorene (tbBP) by first-principles calculations are reported. The simulations show that significantly enhanced Seebeck coefficient and power factor can be achieved in p-type tbBP due to merging of the multi-valley electronic states and flat moiré bands. Moreover, the twisted layers bring in a strong anharmonic phonon scattering and thus very low lattice thermal conductivity of 4.51 W m^-1  K^-1 at 300 K. Consequently, a maximal ZT value can be achieved in p-type 10.11° tbBP along the armchair direction up to 0.57 and 1.06 at 300 and 500 K, respectively. The room-temperature ZT value along the zigzag direction is also significantly increased by almost 40 times compared to pristine BP when the twist angle is close to 70.68°. This work demonstrates a platform to manipulate thermoelectric performance in 2D materials by creating moiré patterns, leading tbBP as a promising eco-friendly candidate for thermoelectric applications.

The record low thermal conductivity of monolayer cuprous iodide (CuI) with a direct wide bandgap

Two-dimensional materials have attracted significant research interest due to the fantastic properties that are unique to their bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of a monolayer counterpart of γ-CuI (cuprous iodide) that is a p-type wide bandgap semiconductor. The monolayer CuI presents multifunctional superiority in terms of electronic, optical, and thermal transport properties. Specifically, the ultralow thermal conductivity of 0.116 W m^-1 K^-1 is predicted for monolayer CuI, which is much lower than those of γ-CuI (0.997 W m^-1 K^-1) and other typical semiconductors. Moreover, an ultrawide direct bandgap of 3.57 eV is found in monolayer CuI, which is even larger than that of γ-CuI (2.95-3.1 eV), promising for applications in nano-/optoelectronics with better optical performance. The ultralow thermal conductivity and direct wide bandgap of monolayer CuI as reported in this study would promise its potential applications in transparent and wearable electronics.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Self-Modulation-Guided Growth of 2D Tellurides with Ultralow Thermal Conductivity

Ultralow thermal conductivity materials have triggered much interest due to diverse applications in thermal insulation, thermal barrier coating, and especially thermoelectrics. Two dimensional (2D) indium tellurides with ultralow thermal conductivity provide a versatile platform for tailoring the heat transfer, exploring new candidates for thermoelectrics, and achieving miniature, lightweight, and highly integrated devices. Unfortunately, their nanostructure and structure-related heat transfer properties at a 2D scale are much less studied due to difficulties in material fabrication. The ionic character between interlayers and strong covalent bonds in 3D directions impede the anisotropic growth of indium telluride flakes; meanwhile, the low environmental stability and chemical reactivity of tellurium also limit the fabrication of high-quality tellurides, thus hindering the exploration of thermal transport properties. Here, a self-modulation-guided growth strategy to synthesize high-quality 2D In₄ Te₃ single crystals with ultralow thermal conductivity (0.47 W m^-1  K^-1 ) is developed. This strategy can also be extended to synthesize a series of highly crystallized metal tellurides, providing excellent candidates for further application in thermoelectrics.

Recent Advances in Materials for Wearable Thermoelectric Generators and Biosensing Devices

Recently, self-powered health monitoring systems using a wearable thermoelectric generator (WTEG) have been rapidly developed since no battery is needed for continuous signal monitoring, and there is no need to worry about battery leakage. However, the existing materials and devices have limitations in rigid form factors and small-scale manufacturing. Moreover, the conventional bulky WTEG is not compatible with soft and deformable tissues, including human skins or internal organs. These limitations restrict the WTEG from stabilizing the thermoelectric gradient that is necessary to harvest the maximum body heat and generate valuable electrical energy. This paper summarizes recent advances in soft, flexible materials and device designs to overcome the existing challenges. Specifically, we discuss various organic and inorganic thermoelectric materials with their properties for manufacturing flexible devices. In addition, this review discusses energy budgets required for effective integration of WTEGs with wearable biomedical systems, which is the main contribution of this article compared to previous articles. Lastly, the key challenges of the existing WTEGs are discussed, followed by describing future perspectives for self-powered health monitoring systems.

Theoretical Prediction of the Monolayer Hf2Br4 as Promising Thermoelectric Material

The stability, electronic structure, electric transport, thermal transport and thermoelectric properties of the monolayer Hf₂Br₄ are predicted by using first principle calculations combined with Boltzmann transport theory. The dynamic stability of the monolayer Hf₂Br₄ is verified by phonon band dispersion, and the thermal stability is revealed by ab initio molecular dynamics simulations. The electronic structure calculation indicates that the monolayer Hf₂Br₄ is an indirect band gap semiconductor with a band gap of 1.31 eV. The lattice thermal conductivity of the monolayer Hf₂Br₄ is investigated and analyzed on phonon mode level. The calculation results of the electric transport explore the excellent electric transport properties of the monolayer Hf₂Br₄. The thermoelectric transport properties as a function of carrier concentration at three different temperatures are calculated. The study indicates that the monolayer Hf₂Br₄ can be an alternative, stable two-dimensional material with potential application in the thermoelectric field.

Strain-Enhanced Thermoelectric Performance in GeS2 Monolayer

Strain engineering has attracted extensive attention as a valid method to tune the physical and chemical properties of two-dimensional (2D) materials. Here, based on first-principles calculations and by solving the semi-classical Boltzmann transport equation, we reveal that the tensile strain can efficiently enhance the thermoelectric properties of the GeS₂ monolayer. It is highlighted that the GeS₂ monolayer has a suitable band gap of 1.50 eV to overcome the bipolar conduction effects in materials and can even maintain high stability under a 6% tensile strain. Interestingly, the band degeneracy in the GeS₂ monolayer can be effectually regulated through strain, thus improving the power factor. Moreover, the lattice thermal conductivity can be reduced from 3.89 to 0.48 W/mK at room temperature under 6% strain. More importantly, the optimal ZT value for the GeS₂ monolayer under 6% strain can reach 0.74 at room temperature and 0.92 at 700 K, which is twice its strain-free form. Our findings provide an exciting insight into regulating the thermoelectric performance of the GeS₂ monolayer by strain engineering.

Exploring the enhancement of the thermoelectric properties of bilayer graphyne nanoribbons

Carbon materials are vital for sustainable energy applications based on abundant and non-toxic raw materials. In this scenario, carbon nanoribbons have superior thermoelectric properties in comparison with their 2D material counterparts, owing to their particular electronic and transport properties. Therefore, we explore the electronic and thermoelectric properties of bilayer α-graphyne nanoribbons (α-BGyNRs) by means of density functional theory, tight-binding, and the non-equilibrium Green's functions (NEGF) method. Our calculations indicate that Ab stacking is the most stable configuration regardless of the edge type. The band structure presents finite band gaps with different features for armchair and zigzag nanoribbons. Concerning the thermoelectric quantities, the Seebeck coefficient is highly sensitive to the width and edge type, while its room-temperature values can achieve a measurable mV K^-1 scale. The electric conductance is found to increase due to layering, thus enhancing the power factor for α-BGyNRs compared with single nanoribbons. These findings therefore indicate the possibility of engineering such systems for thermal nanodevices.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm² V^-1 s^-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .

Stability, optoelectronic and thermal properties of two-dimensional Janusα-Te2S

Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te₂S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼10³cm²V^-1s^-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te₂S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te₂S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te₂S/T-PdS₂,α-Te₂S/BP andα-Te₂S/H-MoS₂are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m^-1K^-1) of Janusα-Te₂S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.

Impressive Thermoelectric Figure of Merit in Two-Dimensional Tetragonal Pnictogens: a Combined First-Principles and Machine-Learning Approach

Over the past decade, two-dimensional materials have gained a lot of interest due to their fascinating applications in the field of thermoelectricity. In this study, tetragonal monolayers of group-V elements (T-P, T-As, T-Sb, and T-Bi) are systematically analyzed in the framework of density functional theory in combination with the machine-learning approach. The phonon spectra, as well as the strain profile, dictate that these tetragonal structures are geometrically stable as well as they are potential candidates for experimental synthesis. Electronic analysis suggests that tetragonal pnictogens offer a band gap in the semiconducting regime. Thermal transport characteristics are investigated by solving the semiclassical Boltzmann transport equation. Exceptionally low lattice thermal conductivity has been observed as the atomic number increases in the group. The high Seebeck coefficient and electrical conductivity as well as the low thermal conductivity of T-As, T-Sb, and T-Bi lead to the generation of a very high thermoelectric figure of merit as compared to standard thermoelectric materials. Furthermore, the thermoelectric conversion efficiency of these materials has been observed to be much higher, which ensures their implications in thermoelectric device engineering.

Thermoelectric characteristics of X[Formula: see text]YH[Formula: see text] monolayers (X=Si, Ge; Y=P, As, Sb, Bi): a first-principles study

Ever since global warming emerged as a serious issue, the development of promising thermoelectric materials has been one of the main hot topics of material science. In this work, we provide an in-depth understanding of the thermoelectric properties of X[Formula: see text]YH[Formula: see text] monolayers (X=Si, Ge; Y=P, As, Sb, Bi) using the density functional theory combined with the Boltzmann transport equation. The results indicate that the monolayers have very low lattice thermal conductivities in the range of 0.09-0.27 Wm[Formula: see text]K[Formula: see text] at room temperature, which are correlated with the atomic masses of primitive cells. Ge[Formula: see text]PH[Formula: see text] and Si[Formula: see text]SbH[Formula: see text] possess the highest mobilities for hole (1894 cm[Formula: see text]V[Formula: see text]s[Formula: see text]) and electron (1629 cm[Formula: see text]V[Formula: see text]s[Formula: see text]), respectively. Si[Formula: see text]BiH[Formula: see text] shows the largest room-temperature figure of merit, [Formula: see text] in the n-type doping ( [Formula: see text] cm[Formula: see text]), which is predicted to reach 3.49 at 800 K. Additionally, Si[Formula: see text]SbH[Formula: see text] and Si[Formula: see text]AsH[Formula: see text] are found to have considerable ZT values above 2 at room temperature. Our findings suggest that the mentioned monolayers are more efficient than the traditional thermoelectric materials such as Bi[Formula: see text]Te[Formula: see text] and stimulate experimental efforts for novel syntheses and applications.

Induced 2H-Phase Formation and Low Thermal Conductivity by Reactive Spark Plasma Sintering of 1T-Phase Pristine and Co-Doped MoS2 Nanosheets

Pristine and Co-doped MoS₂ nanosheets, containing a dominant 1T phase, have been densified by spark plasma sintering (SPS) to produce a nanostructured arrangement. The structural analysis by X-ray powder diffraction revealed that the reactive sintering process transforms the 1T-MoS₂ nanosheets into their stable 2H form despite a significantly reduced sintering temperature and time testifying to the fast kinetics of phase change. Together with the phase conversion, the SPS process promoted a strong texturing of the nanosheets, which drives additional scattering processes and alters the electronic and thermal transport properties. In the pristine sample, it produced one of the lowest thermal conductivities ever reported on MoS₂ with a minimal value of 0.66 W/m·K at room temperature. The effect of Co substitution in the final sintered samples is not significant, compared to the pristine MoS₂ sample, except for a non-negligible improvement of the electrical conductivity by a factor of 100 in the high-Co content (6% by mass) sample.

Recent development in graphdiyne and its derivative materials for novel biomedical applications

Graphdiyne (GDY), which possess sp- and sp²-hybridized carbon and Dirac cones, offers unique physical and chemical properties, including an adjustable intrinsic bandgap, excellent charge carrier transfer efficiency, and superior conductivity compared to other carbon allotropes. These exceptional qualities of GDY and its derivatives have been successfully used in a variety of fields, including catalysis, energy, environmental protection, and biological applications. Herein, we focus on the potential application of GDY and its derivatives in the biomedical domain, including biosensing, biological protection, cancer therapy, and antibacterial agents, demonstrating how the biomimetic behavior of these materials can be a step forward in bridging the gap between nature and applications. Considering the excellent biocompatibility, solubility and selectivity of GDY and its derived materials, they have shown great potential as biosensing and bio-imaging materials. The unusual combination of properties in GDY has been used in biological applications such as "OFF-ON" DNA detection and enzymatic sensing, where GDY has a greater adsorption capacity than graphene and other 2D materials, resulting in increased sensitivity. GDY and its derivatives have also been used in cancer treatment due to their high doxorubicin (DOX) loading capacity (using-stacking) and photothermal conversion ability, and radiation protection since their initial biological use. The poor biodegradation rate of graphene demands the search for new nanomaterials. Accordingly, GDY has better biocompatibility and bio-safety than other 2D nanomaterials, especially graphene and its oxide, due to its absence of aggregation in the physiological environment. Thus, GDY-based nanomaterials have become promising candidates as bio-delivery carriers. Besides, GDY and GDY-based materials have also shown interesting applications in the fields of cell-culture, cell-growth and tissue engineering. Herein, we present a comprehensive review on the applications of GDY and its derivatives as biomedical materials, followed by their future perspectives. This review will provide an outlook for the application of graphene and its derivatives and may open up new horizons to inspire broader interests across various disciplines. Finally, the future prospects for GDY-based materials are examined for their potential biological use.

Improved Thermoelectric Performance of Monolayer HfS2 by Strain Engineering

Strain engineering can effectively improve the energy band degeneracy of two-dimensional transition metal dichalcogenides so that they exhibit good thermoelectric properties under strain. In this work, we have studied the phonon, electronic, thermal, and thermoelectric properties of 1T-phase monolayer HfS2 with biaxial strain based on first-principles calculations combined with Boltzmann equations. At 0% strain, the results show that the lattice thermal conductivity of monolayer HfS2 is 5.01 W m-1 K-1 and the electronic thermal conductivities of n-type and p-type doped monolayer HfS2 are 2.94 and 0.39 W m-1 K-1, respectively, when the doping concentration is around 5 × 1012 cm-2. The power factors of the n-type and p-type doped monolayer HfS2 are different, 29.4 and 1.6 mW mK-2, respectively. Finally, the maximum ZT value of the n-type monolayer HfS2 is 1.09, which is higher than 0.09 of the p-type monolayer HfS2. Under biaxial strain, for n-type HfS2, the lattice thermal conductivity, the electronic thermal conductivity, and the power factor are 1.55 W m-1 K-1, 1.44 W m-1 K-1, and 22.9 mW mK-2 at 6% strain, respectively. Based on the above factor, the ZT value reaches its maximum of 2.29 at 6% strain. For p-type HfS2, the lattice thermal conductivity and the electronic thermal conductivity are 1.12 and 1.53 W m-1 K-1 at 7% strain, respectively. Moreover, the power factor is greatly improved to 29.5 mW mK-2. Finally, the maximum ZT value of the p-type monolayer HfS2 is 3.35 at 7% strain. It is obvious that strain can greatly improve the thermoelectric performance of monolayer HfS2, especially for p-type HfS2. We hope that the research results can provide data references for future experimental exploration.

Synergetic Advantages of Atomically Coupled 2D Inorganic and Graphene Nanosheets as Versatile Building Blocks for Diverse Functional Nanohybrids

2D nanostructured materials, including inorganic and graphene nanosheets, have evoked plenty of scientific research activity due to their intriguing properties and excellent functionalities. The complementary advantages and common 2D crystal shapes of inorganic and graphene nanosheets render their homogenous mixtures powerful building blocks for novel high-performance functional hybrid materials. The nanometer-level thickness of 2D inorganic/graphene nanosheets allows the achievement of unusually strong electronic couplings between sheets, leading to a remarkable improvement in preexisting functionalities and the creation of unexpected properties. The synergetic merits of atomically coupled 2D inorganic-graphene nanosheets are presented here in the exploration of novel heterogeneous functional materials, with an emphasis on their critical roles as hybridization building blocks, interstratified sheets, additives, substrates, and deposited monolayers. The great flexibility and controllability of the elemental compositions, defect structures, and surface natures of inorganic-graphene nanosheets provide valuable opportunities for exploring high-performance nanohybrids applicable as electrodes for supercapacitors and rechargeable batteries, electrocatalysts, photocatalysts, and water purification agents, to give some examples. An outlook on future research perspectives for the exploitation of emerging 2D nanosheet-based hybrid materials is also presented along with novel synthetic strategies to maximize the synergetic advantage of atomically mixed 2D inorganic-graphene nanosheets.