Further studies of the photoelectrochemical properties of the group VI transition metal dichalcogenides

Spatiotemporal evolution of ultrafast photocarrier dynamics across WS2-ReS2 lateral interface

2D lateral heterostructures possess atomically sharp lateral interfaces, while understanding of their ultrafast photocarrier dynamics from a spatiotemporal viewpoint is rather elusive. In this study, we have investigated the spatiotemporal evolution of photocarrier dynamics across the 1D lateral interface of a WS2-ReS2 2D lateral heterostructure utilizing femtosecond laser pump-probe. The nontrivial band offset across the 1D lateral interface markedly mediates the spatiotemporal photocarrier transfer and transport processes. Subsequently, a hole accumulation region on the WS2 side and an electron accumulation region (1DEG) on the ReS2 side have been spatially identified by correlating ultrafast photocarrier signals. The measured width of the unilateral depletion region is 1360 ± 160 nm. Our work has provided substantial insights into mediated photocarrier dynamics in the 2D lateral heterostructure, which will benefit explorations in 2D interfacial physics and 2D lateral optoelectronic devices.

Single Nanoflake Photoelectrochemistry Reveals Intrananoflake Doping Heterogeneity That Explains Ensemble-Level Photoelectrochemical Behavior

Transition metal dichalcogenide (TMD) nanoflake thin films are attractive electrode materials for photoelectrochemical (PEC) solar energy conversion and sensing applications, but their photocurrent quantum yields are generally lower than those of bulk TMD electrodes. The poor PEC performance has been primarily attributed to enhanced charge carrier recombination at exposed defect and edge sites introduced by the exfoliation process. Here, a single nanoflake PEC approach reveals how an alternative effect, doping heterogeneity, limits ensemble-level PEC performance. Photocurrent mapping and local photocurrent-potential (i-E) measurements of MoS2 nanoflakes exfoliated from naturally occurring bulk crystals revealed the presence of n- and p-type domains within the same nanoflake. Interestingly, the n- and p-type domains in the natural MoS2 nanoflakes were equally efficient for iodide oxidation and tri-iodide reduction (IQE values exceed 80%). At the single domain-level, the natural MoS2 nanoflakes were nearly as efficient as nanoflakes exfoliated from synthetic n-type MoS2 crystals. Single domain-level i-E measurements explain why natural MoS2 nanoflakes exhibit an n-type to p-type photocurrent switching effect in ensemble-level measurements: the n- and p-type diode currents from individual domains oppose each other upon illuminating the entire nanoflake, resulting in zero photocurrent at the switching potential. The doping heterogeneity effect is likely due to nonideal stoichiometry, where p-type domains are S-rich according to XPS measurements. Although this doping heterogeneity effect limits photoanode or photocathode performance, these findings open the possibility to synthesize efficient TMD nanoflake photocatalysts with well-defined lateral p- and n-type domains for enhanced charge separation.

Directly visualizing carrier transport and recombination at individual defects within 2D semiconductors

Two-dimensional semiconductors (2DSCs) are promising materials for a wide range of optoelectronic applications. While the fabrication of 2DSCs with thicknesses down to the monolayer limit has been demonstrated through a variety of routes, a robust understanding of carrier transport within these materials is needed to guide the rational design of improved practical devices. In particular, the influence of different types of structural defects on transport is critical, but difficult to interrogate experimentally. Here, a new approach to visualizing carrier transport within 2DSCs, Carrier Generation-Tip Collection Scanning Electrochemical Cell Microscopy (CG-TC SECCM), is described which is capable of providing information at the single-defect level. In this approach, carriers are locally generated within a material using a focused light source and detected as they drive photoelectrochemical reactions at a spatially-offset electrolyte interface created through contact with a pipet-based probe, allowing carrier transport across well-defined, µm-scale paths within a material to be directly interrogated. The efficacy of this approach is demonstrated through studies of minority carrier transport within mechanically-exfoliated n-type WSe2 nanosheets. CG-TC SECCM imaging experiments carried out within pristine basal planes revealed highly anisotropic hole transport, with in-plane and out-of-plane hole diffusion lengths of 2.8 µm and 5.8 nm, respectively. Experiments were also carried out to probe recombination across individual step edge defects within n-WSe2 which suggest a significant surface charge (∼5 mC m-2) exists at these defects, significantly influencing carrier transport. Together, these studies demonstrate a powerful new approach to visualizing carrier transport and recombination within 2DSCs, down to the single-defect level.

Directly Mapping Photoelectrochemical Behavior within Individual Transition Metal Dichalcogenide Nanosheets

Spatial variations in photoelectrochemical reaction rates within individual p-type WSe₂ nanosheets were mapped through the application of scanning electrochemical cell microscopy (SECCM). The simultaneous topographical and electrochemical information provided via SECCM directly revealed how both sheet thickness and the presence of defect structures affect the local rate of photoelectrochemical reactions for both outer sphere and inner sphere redox couples. Sheet thickness was found to play a dramatic role in reaction rates, with onset potentials shifting by as much as 0.5 V over thicknesses of 20-120 nm, attributable to the inability of thin sheets to support independent space charge layers. Step/edge features were found to play a detrimental role for the outer sphere redox couple investigated (Ru(NH₃)₆³⁺ reduction), with taller steps having larger effects on performance. Shorter step features were found to be beneficial for hydrogen evolution, showing a controlled density of defect features is desirable for inner sphere processes. The studies presented here not only provide valuable, quantitative insights into the behavior of transitional metal dichalcogenide materials but also demonstrate the power of applying SECCM to the study of photoelectrochemical systems, particularly those involving two-dimensional (2D) materials.

Efficient Ultrathin Liquid Junction Photovoltaics Based on Transition Metal Dichalcogenides

Ultrathin photovoltaics made of MoS₂ or WSe₂ have the potential to convert solar energy to electricity with high efficiency because all photogenerated carriers are produced at a charge-collecting interface. However, solid-state monolayer photovoltaic devices typically require that charge carriers travel parallel to, instead of perpendicular to, the three atom-thick material toward charge-collecting contacts. Parallel charge transport across long distances decreases energy conversion efficiency. Here we demonstrate proof-of-concept monolayer and bilayer TMD|I^-,I₃^-|Pt photoelectrochemical solar cells that use a conformal liquid electrolyte junction for efficient perpendicular charge transport over significantly larger active areas than solid state systems. Efficient perpendicular charge transport is evidenced by high peak internal quantum efficiencies (IQE) of 44.2, 9.1, and 10.5% for 0.4 mm² MoS₂, WSe₂, and MoS₂/WSe₂ domains in a predominantly monolayer MoS₂/WSe₂ film. The monochromatic energy conversion efficiencies are competitive with state-of-the-art solid-state monolayer heterojunction photovoltaics. However, inefficient light absorption limits the overall power conversion efficiency to 0.19% for this planar geometry monolayer photovoltaic system. Interestingly, correlated Raman and scanning photoelectrochemical microscopy measurements revealed a nonlinear scaling relation between IQE and layer thickness for MoS₂, WSe₂, and MoS₂/MoS₂/WSe₂ domains within the heterojunction film. Specifically, the monochromatic energy conversion efficiency of bilayer MoS₂ is an order of magnitude greater than monolayer MoS₂ and MoS₂/MoS₂/WSe₂ and it exceeds MoS₂/WSe₂ by a factor of 4. The structure/function relationships are hidden in ensemble-level photoelectrochemical measurements. Although nanostructured or plasmonic electrode architectures are still needed to enhance overall light absorption, our study shows that the liquid junction approach represents a simple and rapid strategy to screen ultrathin TMD materials combinations, tune interfacial energetics, and make conformal electrical contacts in photoelectrochemical energy conversion systems for electricity or solar fuels production.

Role of Photogenerated Iodine on the Energy-Conversion Properties of MoSe2 Nanoflake Liquid Junction Photovoltaics

Transition metal dichalcogenides (TMDs) such as MoSe₂ and WSe₂ are efficient materials for converting solar energy to electrical energy in photoelectrochemical photovoltaic cells. One limiting factor of these liquid junction solar cells is that photogenerated oxidation products accumulate on the electrode surface and decrease the photocurrent efficiency. However, it is unclear where the reaction products accumulate on the electrode surface and how they impact the local photoelectrochemical response. This open question is especially important for the structurally heterogeneous TMD nanoflake thin-film electrodes that are promising for large-area solar energy conversion applications. Here, we use a single-nanoflake photoelectrochemical and Raman microscopy approach to probe how the photogenerated I₂/I₃^- products impact the photocurrent collection efficiency and the onset potential in MoSe₂-nanoflake|I^-/I₂|Pt photoelectrochemical solar cells. We observed localized I₂/I₃^- deposition on all types of MoSe₂ nanoflake surface motifs, including basal planes, perimeter edges, and interior step edges. Illuminated nanoflake spots with the highest photocurrent collection efficiency are the first to be limited by I₂/I₃^- formation under high-intensity illumination. Interestingly, I₂/I₃^- formation occurs on illuminated surface spots that have the lowest photocurrent onset potential for iodide oxidation, corresponding to the highest open circuit voltage ( V_OC). The V_OC shifts could be attributed to variations in the surface reaction kinetics or doping density across the nanoflake. Our results highlight important limiting factors of nanoflake thin-film TMD liquid junction photovoltaics under concentrated solar illumination intensities.

Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides

Physics of monolayer and few-layer transition metal dichalcogenides (TMDs) and chemistry of few-layer TMDs have been well studied in recent years in the context of future electronic, optoelectronic, and energy harvesting applications. However, what has escaped the attention of the scientific community is the unique chemistry of monolayer TMDs. It has been demonstrated that the basal plane of multilayer TMDs is chemically inert, whereas edge sites are chemically active. In this article, we experimentally demonstrate that the edge reactivity of the TMDs can be significantly impeded at the monolayer limit through monolayer/substrate interaction, thus making the monolayers highly resistant to electrooxidation and corrosion. In particular, we found that few-layer flakes of MoS₂ and WS₂ exfoliated on conductive TiN substrates are readily corroded beyond a certain positive electrode potential, while monolayer remnants are left behind unscathed. The electrooxidation resistance of monolayers was confirmed using a plethora of characterization techniques including atomic force microscope (AFM) imaging, Raman spectroscopy, photoluminescence (PL) mapping, scanning/transmission electron microscope (S/TEM) imaging, and selected area electron diffraction (SAED). It is believed that strong substrate monolayer interaction compared to the relatively weak interlayer van der Waals interaction is responsible for the superior monolayers chemical stability in highly corrosive oxidizing environments. Our findings could pave the way for the implementation of monolayer transition metal disulfides as superior anticorrosion coating which can have a significant socioeconomic impact.

Flaky nano-crystalline SnSe2 thin films for photoelectrochemical current generation

We report chemical vapor deposition (CVD) and photoelectrochemical properties of large-area thin films of nano-crystalline SnSe₂ on conducting FTO glass. We show that densely packed, randomly oriented SnSe₂ nanoflakes can be grown by reacting vapors of tin monoselenide (SnSe) and selenium at 550 °C without compromising the electrical properties of FTO. We demonstrate that SnSe₂/FTO is photoelectrochemically active in visible to near-UV wavelengths (350–700 nm) and exhibits incident-photon-to-current-efficiency (IPCE) as high as 3.7% at 0 V versus the Ag/AgCl/1 M KCl reference electrode under 350 nm light illumination.

We report chemical vapor deposition (CVD) and photoelectrochemical properties of large-area thin films of nano-crystalline SnSe₂ on conducting FTO glass.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

This review provides a systematic overview of the integration, surface, and interfacial engineering of 2D/3D and 2D/2D homo/heterojunctions for PV and PEC applications.

Electric field effect on the magnetic properties of zigzag MoS2 nanoribbons with different edge passivation

Reversible spin control of zigzag MoS₂ nanoribbons by applying an electric field with enhancement of magnetic coupling strength.

Photoelectrochemistry of Pristine Mono- and Few-Layer MoS2

Two-dimensional crystals are promising building blocks for the new generation of energy materials due to their low volume, high surface area, and high transparency. Electrochemical behavior of these crystals determines their performance in applications such as energy storage/conversion, sensing, and catalysis. Nevertheless, the electrochemistry of an isolated monolayer of molybdenum disulfide, which is one of the most promising semiconducting crystals, has not been achieved to date. We report here on photoelectrochemical properties of pristine monolayer and few-layer basal plane MoS2, namely the electron transfer kinetics and electric double-layer capacitance, supported by an extensive physical and chemical characterization. This enables a comparative qualitative correlation among the electrochemical data, MoS2 structure, and external illumination, although the absolute magnitudes of the electron transfer and capacitance are specific to the redox mediator and electrolyte used in these measurements ([Ru(NH3)6](3+/2+) and LiCl, respectively). Our work shows a strong dependence of the electrochemical properties on the number of MoS2 layers and illumination intensity and proves that an effective interlayer charge transport occurs in bulk MoS2. This highlights the exciting opportunities for tuning of the electrochemical performance of MoS2 through modification of its structure, external environment, and illumination.

Self-assembled 2D WSe2 thin films for photoelectrochemical hydrogen production

WSe₂—a layered semiconductor that can be exfoliated into atomically thin two-dimensional sheets—offers promising characteristics for application in solar energy conversion. However, the lack of controllable, cost-effective methods to scalably fabricate homogeneous thin films currently limits practical application. Here we present a technique to prepare controlled thin films of 2D WSe₂ from dispersions of solvent-exfoliated few-layer flakes. Flake self-assembly at a liquid/liquid interface (formed exceptionally from two non-solvents for WSe₂) followed by substrate transfer affords large-area thin films with superior 2D flake alignment compared with traditional (liquid/air) self-assembly techniques. We further demonstrate, for the first time, solar-to-hydrogen conversion from solution-processed WSe₂ thin films. Bare photoelectrodes with a thickness of ca. 25 nm exhibit sustained p-type photocurrent under simulated solar illumination, and up to 1.0 mA cm^–2 at 0 V versus reversible hydrogen electrode with an added water reduction catalyst (Pt). The importance of the self-assembled morphology is established by photoelectrochemical and conductivity measurements.

Practical application of 2D transition metal dichalcogenides is limited by the lack of scalable fabrication methods. Here, the authors present a technique to prepare controlled thin-films of 2D WSe₂ from dispersions of solvent-exfoliated flakes and demonstrate their use for solar water reduction.

PLD Grown Polycrystalline Tungsten Disulphide (WS2) Films

Polycrystalline WS2 films were grown by pulsed laser deposition (PLD) system at relatively low temperature. The main objective of this study is to optimize the growth conditions for polycrystalline WS2 films at relatively low temperature to use them for photovoltaics (PVs). Different growth conditions and substrates are used and examined systematically. It is found out that films grown on strontium titanate SrTiO3 (STO) substrate have the best structural properties when compared to other substrates examined in this work. X-ray diffraction and optical characterizations of these films reveal crystallographic growth and very promising optical properties for PVs. Furthermore, it was observed that higher growth temperature (>300°C) has an unfavorable effect on the layers by creating some tungsten metallic droplets.

Hydrogen evolution from Pt/Ru-coated p-type WSe2 photocathodes

Crystalline p-type WSe(2) has been grown by a chemical vapor transport method. After deposition of noble metal catalysts, p-WSe(2) photocathodes exhibited thermodynamically based photoelectrode energy-conversion efficiencies of >7% for the hydrogen evolution reaction under mildly acidic conditions, and were stable under cathodic conditions for at least 2 h in acidic as well as in alkaline electrolytes. The open circuit potentials of the photoelectrodes in contact with the H(+)/H(2) redox couple were very close to the bulk recombination/diffusion limit predicted from the Shockley diode equation. Only crystals with a prevalence of surface step edges exhibited a shift in flat-band potential as the pH was varied. Spectral response data indicated effective minority-carrier diffusion lengths of ∼1 μm, which limited the attainable photocurrent densities in the samples to ∼15 mA cm(-2) under 100 mW cm(-2) of Air Mass 1.5G illumination.

Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis

Controlling surface structure at the atomic scale is paramount to developing effective catalysts. For example, the edge sites of MoS(2) are highly catalytically active and are thus preferred at the catalyst surface over MoS(2) basal planes, which are inert. However, thermodynamics favours the presence of the basal plane, limiting the number of active sites at the surface. Herein, we engineer the surface structure of MoS(2) to preferentially expose edge sites to effect improved catalysis by successfully synthesizing contiguous large-area thin films of a highly ordered double-gyroid MoS(2) bicontinuous network with nanoscaled pores. The high surface curvature of this catalyst mesostructure exposes a large fraction of edge sites, which, along with its high surface area, leads to excellent activity for electrocatalytic hydrogen evolution. This work elucidates how morphological control of materials at the nanoscale can significantly impact the surface structure at the atomic scale, enabling new opportunities for enhancing surface properties for catalysis and other important technological applications.

Spray pyrolysis deposition and photoelectrochemical properties of n-type BiOI nanoplatelet thin films

Bismuth oxy-iodide is a potentially interesting visible-light-active photocatalyst; yet there is little research regarding its photoelectrochemical properties. Herein we report the synthesis of BiOI nanoplatelet photoelectrodes by spray pyrolysis on fluorine-doped tin oxide substrates at various temperatures. The films exhibited n-type conductivity, most likely due to the presence of anion vacancies, and optimized films possessed incident photon conversion efficiencies of over 20% in the visible range for the oxidation of I(-) to I(3)(-) at 0.4 V vs Ag/AgCl in acetonitrile. Visible-light photons (λ > 420 nm) contributed approximately 75% of the overall photocurrent under AM1.5G illumination, illustrating their usefulness under solar light illumination. A deposition temperature of 260 °C was found to result in the best performance due to the balance of morphology, crystallinity, impurity levels, and optical absorption, leading to photocurrents of roughly 0.9 mA/cm(2) at 0.4 V vs Ag/AgCl. Although the films performed stably in acetonitrile, their performance decreased significantly upon extended exposure to water, which was apparently caused by a loss of surface iodine and subsequent formation of an insulating bismuth hydroxide layer.

Dye sensitization of single crystal semiconductor electrodes

Even though investigations of dye-sensitized nanocrystalline semiconductors in solar cells has dominated research on dye-sensitized semiconductors over the past two decades, single crystal electrodes represent far simpler model systems for studying the sensitization process with a continuing train of studies dating back more than 40 years. Even today single crystal surfaces prove to be more controlled experimental models for the study of dye-sensitized semiconductors than the nanocrystalline substrates. This Account analyzes the scientific advances in the model sensitized single crystal systems that preceded the introduction of nanocrystalline semiconductor electrodes. It then follows the single crystal research to the present, illustrating both their striking simplicity of use and clarity of interpretation relative to nanocrystalline electrodes. Researchers have employed many electrochemical, photochemical, and scanning probe techniques for studying monolayer quantities of sensitizing dyes at specific crystallographic faces of different semiconductors. These methods include photochronocoulometry, electronic spectroscopy, and flash photolysis of dyes at potential-controlled semiconductor electrodes and the use of total internal reflection methods. In addition, we describe the preparation of surfaces of single crystal SnS(2) and TiO(2) electrodes to serve as reproducible model systems for charge separation at dye-sensitized solar cells. This process involves cleaving the SnS(2) electrodes and a photoelectrochemical surface treatment for TiO(2) that produces clean surfaces for sensitization (as verified by AFM) resulting in near unity yields for electron transfer from the molecular excited dyes into the conduction band. In recent experiments with ruthenium complexes at TiO(2) and with carboxylated cyanine dyes, we demonstrate the promise of this simple model for understanding dye-sensitized solar cells. In each of these systems, we can observe and analyze the complex photochemistry in a quantitative manner. Molecules of the well-known N3 ruthenium complex attach to four different crystallographic faces of anatase and rutile TiO(2) at different rates and to a different extent. With carboxylated cyanine dye sensitizers on these surfaces, molecular aggregation on the surface is a function of molecular structure and crystallographic face. In contrast with the N3 sensitizer these organic dyes undergo a photoinduced dimerization and desorption reaction when hydroquinone regenerators are present. With both classes of sensitizers, we demonstrate a new photochronocoulometric technique that quantifies the amount of attached dye on the electrode surface. We have completed initial experiments examining quantum dot sensitization of TiO(2) crystals, which could eventually lead to sensitizers with higher stability and absorption coefficients. Although these single crystal electrode models show promise for providing insights and predictive value in understanding the sensitization process, more sophisticated models will be needed to fully understand the charge transfer from the localized electronic states of the sensitizer to the extended states of the semiconductor.

Size-dependent structure of MoS2 nanocrystals

Molybdenum disulphide nanostructures are of interest for a wide variety of nanotechnological applications ranging from the potential use of inorganic nanotubes in nanoelectronics to the active use of nanoparticles in heterogeneous catalysis. Here, we use atom-resolved scanning tunnelling microscopy to systematically map and classify the atomic-scale structure of triangular MoS2 nanocrystals as a function of size. Instead of a smooth variation as expected from the bulk structure of MoS2, we observe a very strong size dependence for the cluster morphology and electronic structure driven by the tendency to optimize the sulphur excess present at the cluster edges. By analysing of the atomic-scale structure of clusters, we identify the origin of the structural transitions occurring at unique cluster sizes. The novel findings suggest that good size control during the synthesis of MoS2 nanostructures may be used for the production of chemically or optically active MoS2 nanomaterials with superior performance.