Carrier concentration tuning in thermoelectric thiospinel Cu2CoTi3S8 by oxidative extraction of copper

Tin-Substituted Chalcopyrite: An n-Type Sulfide with Enhanced Thermoelectric Performance

The dearth of n-type sulfides with thermoelectric performance comparable to that of their p-type analogues presents a problem in the fabrication of all-sulfide devices. Chalcopyrite (CuFeS2) offers a rare example of an n-type sulfide. Chemical substitution has been used to enhance the thermoelectric performance of chalcopyrite through preparation of Cu1-x Sn x FeS2 (0 ≤ x ≤ 0.1). Substitution induces a high level of mass and strain field fluctuation, leading to lattice softening and enhanced point-defect scattering. Together with dislocations and twinning identified by transmission electron microscopy, this provides a mechanism for scattering phonons with a wide range of mean free paths. Substituted materials retain a large density-of-states effective mass and, hence, a high Seebeck coefficient. Combined with a high charge-carrier mobility and, thus, high electrical conductivity, a 3-fold improvement in power factor is achieved. Density functional theory (DFT) calculations reveal that substitution leads to the creation of small polarons, involving localized Fe2+ states, as confirmed by X-ray photoelectron spectroscopy. Small polaron formation limits the increase in carrier concentration to values that are lower than expected on electron-counting grounds. An improved power factor, coupled with substantial reductions (up to 40%) in lattice thermal conductivity, increases the maximum figure-of-merit by 300%, to zT ≈ 0.3 at 673 K for Cu0.96Sn0.04FeS2.

Crystal Structure and Thermoelectric Properties of Novel Quaternary Cu2MHf3S8 (M-Mn, Fe, Co, and Ni) Thiospinels with Low Thermal Conductivity

Uncovering of the origin of intrinsically low thermal conductivity in novel crystalline solids is among the main streams in modern thermoelectricity. Because of their earth-abundant nature and environmentally friendly content, Cu-based thiospinels are attractive functional semiconductors, including thermoelectric (TE) materials. Herein, we report the crystal structure, as well as electronic and TE properties of four new Cu2MHf3S8 (M-Mn, Fe, Co, and Ni) thiospinels. The performed density functional theory calculations predicted the decrease of the band gap and transition from p- to n-type conductivity in the Mn-Fe-Co-Ni series, which was confirmed experimentally. The best TE performance in this work was observed for the Cu2NiHf3S8 thiospinel due to its highest power factor and low thermal conductivity. Moreover, all the discovered compounds possess very low lattice thermal conductivity κlat over the investigated temperature range. The κlat for Cu2CoHf3S8 has been found to be as low as 0.8 W m-1 K-1 at 298 K and 0.5 W m-1 K-1 at 673 K, which are significantly lower values compared to the other Cu-based thiospinels reported up to date. The strongly disturbed phonon transport of the investigated alloys mainly comes from the peculiar crystal structure where the large cubic unit cells contain many vacant octahedral voids. As it was evaluated from the Callaway approach and confirmed by the speed of sound measurements, such a crystal structure promotes the increase in lattice anharmonicity, which is the main reason for the low κlat. This work provides a guideline for the engineering of thermal transport in thiospinels and offers the discovered Cu2MHf3S8 (M-Mn, Fe, Co, and Ni) compounds, as new promising functional materials with low lattice thermal conductivity.

A Tunable Structural Family with Ultralow Thermal Conductivity: Copper-Deficient Cu1-x□xPb1-xBi1+xS3

Understanding the mechanism that connects heat transport with crystal structures and order/disorder phenomena is crucial to develop materials with ultralow thermal conductivity (κ), for thermoelectric and thermal barrier applications, and requires the study of highly pure materials. We synthesized the n-type sulfide CuPbBi₅S₉ with an ultralow κ value of 0.6-0.4 W m^-1 K^-1 in the temperature range 300-700 K. In contrast to prior studies, we show that this synthetic sulfide does not exhibit the ordered gladite mineral structure but instead forms a copper-deficient disordered aikinite structure with partial Pb replacement by Bi, according to the chemical formula Cu_1/3□_2/3Pb_1/3Bi_5/3S₃. By combining experiments and lattice dynamics calculations, we elucidated that the ultralow κ value of this compound is due to very low energy optical modes associated with Pb and Bi ions and, to a smaller extent, Cu. This vibrational complexity at low energy hints at substantial anharmonic effects that contribute to enhance phonon scattering. Importantly, we show that this aikinite-type sulfide, despite being a poor semiconductor, is a potential matrix for designing novel, efficient n-type thermoelectric compounds with ultralow κ values. A drastic improvement in the carrier concentration and thermoelectric figure of merit have been obtained upon Cl for S and Bi for Pb substitution. The Cu_1-x□_xPb_1-xBi_1+xS₃ series provides a new, interesting structural prototype for engineering n-type thermoelectric sulfides by controlling disorder and optimizing doping.

Structural Peculiarities and Thermoelectric Study of Iron Indium Thiospinel

The homogeneity range of ternary iron indium thiospinel at 873 K was investigated. A detailed study was focused on two distinct series (y=z): 1) a previously reported charge-balanced (In0.67+0.33y □0.33-0.33y )tetr [In2-z Fez ]oct S4 (A1-series; □ stands for vacancy; the abbreviations "tetr" and "oct" indicate atoms occupying tetrahedral 8a and octahedral 16d sites, respectively) and 2) a new charge-unbalanced (In0.67+y □0.33-y )tetr [In2-z Fez ]oct S4 (A2-series). Fe atoms were confirmed to exclusively occupy an octahedral position in both series. An unusual reduction of the unit cell parameter with increasing Fe content is explained by differences in the ionic radii between Fe and In, as well as by an additional electrostatic attraction originating from charge imbalance (latter only in A2-series). The studied compound is an n-type semiconductor, and its charge carrier concentration increases or decreases for larger Fe content within the A1- and A2-series, respectively. The thermal conductivity κtot is significantly reduced upon increasing vacancy concentration, whereas the change of power factor is insufficient to drastically improve the thermoelectric figure of merit.

Improved Thermoelectric Performance through Double Substitution in Shandite-Type Mixed-Metal Sulfides

Substitution of tin by indium in shandite-type phases, A₃Sn₂S₂ with mixed Co/Fe occupancy of the A-sites is used to tune the Fermi level within a region of the density of states in which there are sharp, narrow bands of predominantly metal d-character. Materials of general formula Co_2.5+x Fe_0.5-x Sn_2--yIn _y S₂ (x = 0, 0.167; 0.0 ≤ y ≤ 0.7) have been prepared by solid-state reaction and the products characterized by powder X-ray diffraction. Electrical-transport property data reveal that the progressive depopulation of the upper conduction band as tin is replaced by indium increases the electrical resistivity, and the weakly temperature-dependent ρ(T) becomes more semiconducting in character. Concomitant changes in the negative Seebeck coefficient, the temperature dependence of which becomes increasingly linear, suggests the more highly substituted materials are n-type degenerate semiconductors. The power factors of the substituted phases, while increased, exhibit a weak temperature dependence. The observed reductions in thermal conductivity are principally due to reductions in the charge-carrier contribution on hole doping. A maximum figure-of-merit of (ZT)_max = 0.29 is obtained for the composition Co_2.667Fe_0.333Sn_1.6In_0.4S₂ at 573 K: among the highest values for an n-type sulfide at this temperature.