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Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Novel valley character and tunable quasi-half-valley metal state in Janus monolayer VSiGeP 4. Phys Chem Chem Phys 2024; 26:4683-4691. [PMID: 38251932 DOI: 10.1039/d3cp05636h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The manipulation and regulation of valley characteristics have aroused widespread interest in emerging information fields and fundamental research. Realizing valley polarization is one crucial issue for spintronic and valleytronic applications, the concepts of a half-valley metal (HVM) and ferrovalley (FV) materials have been put forward. Then, to separate electron and hole carriers, a fresh concept of a quasi-HVM (QHVM) has been proposed, in which only one type of carrier is valley polarized for electron and hole carriers. Based on first-principles calculations, we demonstrate that the Janus monolayer VSiGeP4 has QHVM character. To well regulate the QHVM state, strain engineering is utilized to adjust the electronic and valley traits of monolayer VSiGeP4. In the discussed strain range, monolayer VSiGeP4 always favors the ferromagnetic ground state and out-of-plane magnetization, which ensures the appearance of spontaneous valley polarization. It is found that the QHVM state can be induced in different electronic correlations (U), and the strain can effectively tune the valley, magnetic, and electronic features to maintain the QHVM state under various U values. Our work opens up a new research idea in the design of multifunctional spintronic and valleytronic devices.
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Affiliation(s)
- Kang Jia
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
| | - Chang-Wen Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
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Li YQ, Zhang X, Shang X, He QW, Tang DS, Wang XC, Duan CG. Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials. NANO LETTERS 2023; 23:10013-10020. [PMID: 37856232 DOI: 10.1021/acs.nanolett.3c03238] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP4 monolayer exhibits a large valley polarization up to 100 meV, which can be effectively operated by reversing magnetization. Interestingly, the antiferromagnetic VSiGeP4 bilayers with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, supporting the proposed strategy for manipulating valley physics via ferroelectric switching and interlayer sliding. In addition, the VSiGeP4 monolayer contains remarkable tunable piezoelectricity regulated by electron correlation U. This study proposes a feasible idea for regulating valley polarization and a general design idea for multifunctional devices with multiferroic and piezoelectric properties, facilitating the miniaturization and integration of nanodevices.
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Affiliation(s)
- Yun-Qin Li
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Xian Zhang
- Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
| | - Xiao Shang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Qi-Wen He
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Dai-Song Tang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Xiao-Chun Wang
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
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Zhang C, Song B, Qi Z, Liu X, Ren Y. Competition between Li2Se2Sx Conversion and Li Ion Transport on Graphene Surface Coordination Doped with Transition Metal and N. CHEMICAL ENGINEERING JOURNAL ADVANCES 2023. [DOI: 10.1016/j.ceja.2023.100468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023] Open
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Remarkable-cycle-performance β-bismuthene/graphene heterostructure anode for Li-ion battery. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.11.037] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Navrátil J, Otyepka M, Błoński P. OsPd bimetallic dimer pushes the limit of magnetic anisotropy in atom-sized magnets for data storage. NANOTECHNOLOGY 2022; 33:215001. [PMID: 35147526 DOI: 10.1088/1361-6528/ac5447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Accepted: 02/10/2022] [Indexed: 06/14/2023]
Abstract
The growing gap between the volume of digital data being created and the extent of available storage capacities stimulates intensive research into surface-supported, well-ordered array of atom-sized magnets that represents the ultimate limit of magnetic data storage. Anchoring transition-metal heterodimers in vacancy defects in the graphene lattice has been identified as a vivid strategy to achieve large magnetic anisotropy energy (MAE) up to 80 meV with an easy axis aligned along the dimer bond. In this paper we have made a significant leap forward finding out MAE of 119 meV for an OsPt dimer and 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy defect. The system with the highest MAE and with the theoretical storage density of ∼490 Tb·inch-2pushes the current limit of theoretical blocking temperature in graphene-supported transition-metal dimers from ∼20 to ∼44 K assuming the relaxation time of 10 years. The mechanism of the enhanced MAE is discussed.
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Affiliation(s)
- Jan Navrátil
- Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, tř. 17 listopadu 12, 779 00 Olomouc, Czech Republic
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
| | - Michal Otyepka
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
| | - Piotr Błoński
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
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Jiang S, Nazir S, Yang K. High-Throughput Design of Interfacial Perpendicular Magnetic Anisotropy at Heusler/MgO Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9734-9743. [PMID: 35139635 DOI: 10.1021/acsami.1c20945] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The perpendicular magnetic anisotropy (PMA) at ferromagnet/insulator interfaces has important technological applications, such as in the fields of magnetic recording and sensing devices. The perpendicular magnetic tunnel junctions (p-MTJs) with strong PMA have recently attracted increasing interest because they offer high stability and device performance toward low energy consumption. Heusler alloys are a large family of compounds that offer promising magnetic properties for developing p-MTJs. However, it is challenging to select appropriate combinations of Heusler ferromagnets and insulators with the desired interfacial properties. Here, we report a systematic high-throughput screening approach to search for candidate Heusler/MgO material interfaces with strong PMA and other desired material properties for spintronic technologies. On the basis of the open quantum material repositories, we developed a series of material descriptors, including formation energy, convex hull distance, magnetic ordering, lattice misfit, magnetic anisotropy constant, cleavage energy, and tunnel magnetoresistance, to filter candidate Heusler/MgO interfaces among the possible 40 000 ternary Heusler compounds. After a comprehensive screening, five full-Heusler compounds, including Co2CrAl, Co2FeAl, Co2HfSn, Fe2IrGa, and Mn2IrGe, and two half-Heusler compounds, PtCrSb and PtMnAs, were found to be promising for designing p-MTJs. This work demonstrates a new way for the high-throughput design of functional material interfaces for spintronic applications via exploiting the open quantum material repositories and developing effective material descriptors along with the large-scale ab initio calculations for material interfaces.
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Affiliation(s)
- Sicong Jiang
- Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States
- Program of Materials Science and Engineering, University of California San Diego, La Jolla, California 92093-0418, United States
| | - Safdar Nazir
- Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States
| | - Kesong Yang
- Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States
- Program of Materials Science and Engineering, University of California San Diego, La Jolla, California 92093-0418, United States
- Center for Memory and Recording Research, University of California San Diego, La Jolla, California 92093-0401, United States
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Qiao W, Jin D, Mi W, Wang D, Yan S, Xu X, Zhou T. Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of two-dimensional ferroelectric In2Se3 substrate. Phys Chem Chem Phys 2022; 24:21966-21974. [DOI: 10.1039/d2cp01864k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study...
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Bai H, Li X, Pan H, He P, Xu ZA, Lu Y. Van der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe 2/CuInP 2S 6/CrSe 2 Junction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:60200-60208. [PMID: 34883018 DOI: 10.1021/acsami.1c18949] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetic tunnel junctions (MTJs), ferroelectric/antiferroelectric tunnel junctions (FTJs/AFTJs), and multiferroic tunnel junctions (MFTJs) have recently attracted significant interest for technological applications of nanoscale memory devices. Until now, most of them are based on perovskite oxide heterostructures with a relatively high resistance-area (RA) product and low resistance difference unfavorable for practical applications. The recent discovery of the two-dimensional (2D) van der Waals (vdW) ferroelectric (FE) and magnetic materials has opened a new route to realize tunnel junctions with high performance and atomic-scale dimensions. Here, using first-principles calculations, we propose a new type of 2D tunnel junction: an antiferroelectric magnetic tunnel junction (AFMTJ), which inherits the features of both MTJ and AFTJ. This AFMTJ is composed of monolayer CuInP2S6 (CIPS) sandwiched between 2D magnetic electrodes of CrSe2. The AFTJ with nonmagnetic electrodes of TiSe2 on both sides of CIPS and the asymmetric AFTJ with both CrSe2 and TiSe2 electrodes are also investigated. Based on quantum-mechanical modeling of the electronic transport, sizeable tunneling electroresistance effects and multiple nonvolatile resistance states are demonstrated. More importantly, a remarkably low RA product (less than 0.1 Ω·μm2) makes the proposed vdW AFMTJs superior to the conventional MFTJs in terms of their promising nonvolatile memory applications. Our calculations provide new guidance for the experiment and application of nanoscale memory devices.
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Affiliation(s)
- Hua Bai
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Xinyi Li
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hui Pan
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR 999078, China
| | - Pimo He
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
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Hu H, Wang H, Sun Y, Li J, Wei J, Xie D, Zhu H. Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe. NANOTECHNOLOGY 2021; 32:385202. [PMID: 34116515 DOI: 10.1088/1361-6528/ac0ac5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 06/11/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) ferroelectric materials are promising substitutes of three-dimensional perovskite based ferroelectric ceramic materials. Yet most studies have been focused on the construction of non-centrosymmetric 2D van der Waals materials and only a few are constructed experimentally. Herein, we experimentally demonstrate the co-existence of voltage-tunable out-of-plane (OOP) and in-plane (IP) ferroelectricity in few-layer InSe prepared by a solution-processable method and fabricate ferroelectric semiconductor channel transistors. The reversible polarization can initiate instant switch of resistance with high ON/OFF ratios and a comparable subthreshold swing of 160 mV/dec under gate modulation. The origins of such unique OOP and IP ferroelectricity of the centrosymmetric structure are theoretically analyzed.
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Affiliation(s)
- Haowen Hu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Huaipeng Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yilin Sun
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
- School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiawei Li
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinliang Wei
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Dan Xie
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Hongwei Zhu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Ma XY, Lyu HY, Hao KR, Zhao YM, Qian X, Yan QB, Su G. Large family of two-dimensional ferroelectric metals discovered via machine learning. Sci Bull (Beijing) 2021; 66:233-242. [PMID: 36654328 DOI: 10.1016/j.scib.2020.09.010] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Revised: 08/03/2020] [Accepted: 09/01/2020] [Indexed: 01/20/2023]
Abstract
Ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric fields. In 1965, Anderson and Blount proposed the concept of "ferroelectric metal", however, it is only until recently that very rare ferroelectric metals were reported. Here, by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors, we systematically investigated a large family (2964) of two-dimensional (2D) bimetal phosphates, and discovered 60 stable ferroelectrics with out-of-plane polarization, including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven multiferroics. The ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms, and the full-d-orbital coinage metal elements cause larger displacements and polarization than other elements. For 2D ferroelectric metals, the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the metallicity. It is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer, while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer, thereby causing the coexistence of metallicity and ferroelectricity. Van der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport properties. Our work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.
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Affiliation(s)
- Xing-Yu Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hou-Yi Lyu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China; Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kuan-Rong Hao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yi-Ming Zhao
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, College of Engineering and College of Science, Texas A&M University, College Station, TX 77843, USA
| | - Qing-Bo Yan
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Gang Su
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
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Liu D, Di B, Peng Z, Yin C, Zhu H, Wen X, Chen Q, Zhu J, Wu K. Surface-mediated ordering of pristine Salen molecules on coinage metals. Inorg Chem Front 2021. [DOI: 10.1039/d0qi00874e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The conformational isomers of Salen molecules and their self-assembled structures on coinage metal surfaces.
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Affiliation(s)
- Dan Liu
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Bin Di
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Zhantao Peng
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Cen Yin
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Hao Zhu
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Xiaojie Wen
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Qiwei Chen
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
| | - Junfa Zhu
- National Synchrotron Radiation Laboratory
- University of Science and Technology of China
- Hefei 230029
- China
| | - Kai Wu
- College of Chemistry and Molecular Engineering
- Peking University
- Beijing 100871
- China
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