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Wang Z, Lyu M, Zhang BW, Xiao M, Zhang C, Han EQ, Wang L. Thermally Evaporated Metal Halide Perovskites and Their Analogues: Film Fabrication, Applications and Beyond. SMALL METHODS 2024:e2301633. [PMID: 38682581 DOI: 10.1002/smtd.202301633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Revised: 04/06/2024] [Indexed: 05/01/2024]
Abstract
Metal halide perovskites emerge as promising semiconductors for optoelectronic devices due to ease of fabrication, attractive photophysical properties, their low cost, highly tunable material properties, and high performance. High-quality thin films of metal halide perovskites are the basis of most of these applications including solar cells, light-emitting diodes, photodetectors, and electronic memristors. A typical fabrication method for perovskite thin films is the solution method, which has several limitations in device reproducibility, adverse environmental impact, and utilization of raw materials. Thermal evaporation holds great promise in addressing these bottlenecks in fabricating high-quality halide perovskite thin films. It also has high compatibility with mass-production platforms that are well-established in industries. This review first introduces the basics of the thermal evaporation method with a particular focus on the critical parameters influencing the thin film deposition. The research progress of the fabrication of metal halide perovskite thin films is further summarized by different thermal evaporation approaches and their applications in solar cells and other optoelectronic devices. Finally, research challenges and future opportunities for both fundamental research and commercialization are discussed.
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Affiliation(s)
- Zitong Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Miaoqiang Lyu
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Bo Wei Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Mu Xiao
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Chengxi Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - E Q Han
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
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Sirna L, Pellegrino AL, Sciacca SP, Lippi M, Rossi P, Bonaccorso C, Bengasi G, Foti M, Malandrino G. Highly stable CsPbBr 3 perovskite phases from new lead β-diketonate glyme adducts. Dalton Trans 2024; 53:5360-5372. [PMID: 38376202 DOI: 10.1039/d3dt03989g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Lead is one of the key metals of the all-inorganic lead halide perovskites. This work tailors novel architectures of lead's coordination sphere using a β-diketone (H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione) and a glyme (monoglyme, diglyme, triglyme, or tetraglyme) ligand. The coordination chemistry and thermal behaviour of these "Pb(hfa)2·glyme" adducts have been analysed through FT-IR spectroscopy, 1H and 13C NMR analyses, thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC). Single-crystal X-ray diffraction studies provide evidence of the formation of a monomeric Pb(hfa)2·monoglyme structure. In order to validate the potentiality of these "Pb(hfa)2·glyme" precursors for the fabrication of Pb-based halide perovskites, a facile, one-step and low-temperature solution approach has been applied to prepare CsPbBr3 microcrystals with a process carried out in air under atmospheric pressure. Pure stoichiometric CsPbBr3 powders, obtained using Cs(hfa) and Br2 as cesium and bromide sources, respectively, show excellent stability under atmospheric conditions. Better results are obtained in terms of yield and stability from the diglyme and tetraglyme lead adducts. Field emission scanning electron microscopy (FE-SEM) indicates a good uniform morphology of cubic grains, while the structure and the 1 : 1 : 3 stoichiometry of Cs : Pb : Br are confirmed by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDX), respectively. Tauc plots derived from absorption spectroscopy point to optical energy band-gaps (Eg) in the 2.21-2.27 eV range, in agreement with literature data. The present research elucidates the potential of these novel "Pb(hfa)2·glyme" adducts as promising lead precursors for CsPbBr3 perovskite synthesis, paving the way for their implementation in various technological applications.
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Affiliation(s)
- Lorenzo Sirna
- Dipartimento Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy.
| | - Anna Lucia Pellegrino
- Dipartimento Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy.
| | - Salvatore Pio Sciacca
- Dipartimento Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy.
| | - Martina Lippi
- Dipartimento di Ingegneria Industriale, Università di Firenze, Via Santa Marta 3, 50136 Firenze, Italy
| | - Patrizia Rossi
- Dipartimento di Ingegneria Industriale, Università di Firenze, Via Santa Marta 3, 50136 Firenze, Italy
| | - Carmela Bonaccorso
- Dipartimento Scienze Chimiche, Università degli Studi di Catania, Viale Andrea Doria 6, 95125 Catania, Italy
| | | | - Marina Foti
- 3SUN s.r.l., Contrada Blocco Torrazze, 95121, Catania, Italy
| | - Graziella Malandrino
- Dipartimento Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy.
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Zhang Z, Ji R, Hofstetter YJ, Deconinck M, Brunner J, Li Y, An Q, Vaynzof Y. Towards low-temperature processing of efficient γ-CsPbI 3 perovskite solar cells. JOURNAL OF MATERIALS CHEMISTRY. A 2023; 11:16115-16126. [PMID: 38013759 PMCID: PMC10394668 DOI: 10.1039/d3ta03249c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 06/06/2023] [Indexed: 11/29/2023]
Abstract
Inorganic cesium lead iodide (CsPbI3) perovskite solar cells (PSCs) have attracted enormous attention due to their excellent thermal stability and optical bandgap (∼1.73 eV), well-suited for tandem device applications. However, achieving high-performance photovoltaic devices processed at low temperatures is still challenging. Here we reported a new method for the fabrication of high-efficiency and stable γ-CsPbI3 PSCs at lower temperatures than was previously possible by introducing the long-chain organic cation salt ethane-1,2-diammonium iodide (EDAI2) and regulating the content of lead acetate (Pb(OAc)2) in the perovskite precursor solution. We find that EDAI2 acts as an intermediate that can promote the formation of γ-CsPbI3, while excess Pb(OAc)2 can further stabilize the γ-phase of CsPbI3 perovskite. Consequently, improved crystallinity and morphology and reduced carrier recombination are observed in the CsPbI3 films fabricated by the new method. By optimizing the hole transport layer of CsPbI3 inverted architecture solar cells, we demonstrate efficiencies of up to 16.6%, surpassing previous reports examining γ-CsPbI3 in inverted PSCs. Notably, the encapsulated solar cells maintain 97% of their initial efficiency at room temperature and under dim light for 25 days, demonstrating the synergistic effect of EDAI2 and Pb(OAc)2 in stabilizing γ-CsPbI3 PSCs.
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Affiliation(s)
- Zongbao Zhang
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Ran Ji
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Yvonne J Hofstetter
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Marielle Deconinck
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Julius Brunner
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Yanxiu Li
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Qingzhi An
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
| | - Yana Vaynzof
- Chair for Emerging Electronic Technologies, Technische Universität Dresden Nöthnitzer Straße 61 01187 Dresden Germany
- Leibniz-Institute for Solid State and Materials Research Dresden Helmholtzstraße 20 01069 Dresden Germany
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Lv Y, Li Y, Zhou Y, Liu J, Wang J, Lin Y, Hu J, Pan T, Li Y, Wang K, Xia Y, Shi W, Chen Y. Efficient and Stable β-CsPbI 3 Solar Cells through Solvent Engineering with Methylamine Acetate Ionic Liquid. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37290066 DOI: 10.1021/acsami.3c05396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
CsPbI3, an all-inorganic perovskite material with suitable band gap and excellent thermal stability, has garnered significant attention for its potential in perovskite solar cells (PSCs). However, CsPbI3 is susceptible to phase changes from photoactive to photoinactive in humid environments. Hence, it is crucial to achieve controllable growth of CsPbI3 perovskite thin films with the desired β-crystal phase and compact morphology for efficient and stable PSCs. Herein, MAAc was used as a solvent for the CsPbI3 precursor to fabricate β-CsPbI3 perovskite. An intermediate compound of CsxMA1-xPbIxAc3-x was initially formed in the MAAc solution, and during annealing, the MA+ and Ac- ions were replaced by Cs+ and I- ions, respectively. Furthermore, the incorporation of strong C═O···Pb coordination stabilized the black-phase β-CsPbI3 and facilitated the growth of crystals with a narrow vertical orientation and large grain size. As a result, the PSCs with an efficiency of 18.9% and improved stability (less than 10% decay after 2000 h of storage in N2 and less than 30% decay after 500 h of storage in humid air without any encapsulation) were achieved.
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Affiliation(s)
- Yifan Lv
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yiqun Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yan Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jin Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jinpei Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yuexin Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Jianfei Hu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Tengfei Pan
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yajing Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Kaiyu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Wei Shi
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu 211816, P.R. China
- Optics Valley Laboratory, Wuhan, Hubei 430074, China
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Liu Y, Ma Z. Combining g-C3N4 with CsPbI3 for efficient photocatalysis under visible light. Colloids Surf A Physicochem Eng Asp 2021. [DOI: 10.1016/j.colsurfa.2021.127310] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
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Yang C, Han Q, Liu S, Liao J, Long C, Li Y, Dai G, Yang J, Liu X. Can Vacuum Deposition Apply to Bismuth-Doped γ-CsPbI 3 Perovskite? Revealing the Role of Bi 3+ in the Formation of Black Phase. J Phys Chem Lett 2021; 12:6927-6933. [PMID: 34282912 DOI: 10.1021/acs.jpclett.1c01739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The B-site doped CsPbI3 has been demonstrated to be very promising for photovoltaics owing to its low black phase transition temperature. Though B-site doped black-CsPbI3 perovskites have been successfully achieved by solution-processing, it is unclear whether these systems are available by other methods such as vacuum deposition. In this work, heterovalent doped CsPb1-xBixI3 is targeted. To incorporate Bi3+ into the final film via vacuum deposition, the solid solution precursor Pb1-xBixI2 (0.01 ≤ x ≤ 0.04) is developed. However, these coevaporated films not only are dominated by another hexagonal perovskite phase but also fail to decrease the black phase transition temperature. The role of Bi3+ in the formation of the black phase is further studied by solution methods with different types of precursors. It is demonstrated that the key factor in the low-temperature black phase transition is small grain size, as well as the colloid size within the precursor solution, rather than simple substitution of Pb2+ with Bi3+.
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Affiliation(s)
- Chenggang Yang
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Qiang Han
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Shaobo Liu
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jujian Liao
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Caoyu Long
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Youzhen Li
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Guozhang Dai
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Junliang Yang
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
| | - Xiaoliang Liu
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, Hunan 410083, P. R. China
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