Why is coordination chemistry stretching the limits of micro-electronics technology?

Modern microelectronics and microfluidics on microneedles

Possessing the attractive advantages of moderate invasiveness and high compliance, there is no doubt that microneedles (MNs) have been a gradually rising star in the field of medicine. Recent evidence implies that microelectronics technology based on microcircuits, microelectrodes and other microelectronic elements combined with MNs can realize mild electrical stimulation, drug release and various types of electrical sensing detection. In addition, the combination of microfluidics technology and MNs makes it possible to transport fluid drugs and access a small quantity of body fluids which have shown significant untapped potential for a wide range of diagnostics. Of particular note is that combining both technologies and MNs is more difficult, but is promising to build a modern healthcare platform with more comprehensive functions. This review introduces the properties of MNs that can form integrated systems with microelectronics and microfluidics, and summarizes these systems and their applications. Furthermore, the future challenges and perspectives of the integrated systems are conclusively proposed.

Microscale vacuum distillation apparatus for high-boiling, air- and heat-sensitive liquids

We describe a simple apparatus that enables the vacuum distillation of ~0.2 mL of air- and water-sensitive, high-boiling liquids. The apparatus should be useful in teaching laboratories, and also to practicing chemists.

Growth of WOx from Tungsten(VI) Oxo-Fluoroalkoxide Complexes with Partially Fluorinated β-Diketonate/β-Ketoesterate Ligands: Comparison of Chemical Vapor Deposition to Aerosol-Assisted CVD

Tungsten(VI) oxo complexes of the type WO(OR)₃L [R = C(CH₃)₂CF₃, C(CF₃)₂CH₃, CH(CF₃)₂, L = hexafluoroacetylacetonate (hfac), ethyl trifluoroacetoacetonate (etfac), acetylacetonate (acac)] bearing partially fluorinated alkoxide and/or chelating ligands were synthesized. Thermal decomposition behavior and mass spectrometry (MS) fragmentation patterns of selected examples were studied. The thermolysis products of WO(OC(CF₃)₂CH₃)₃(hfac) were characterized by nuclear magnetic resonance and gas chromatography-MS. Studies of the sublimation behavior of the complexes demonstrated that their volatility depends on the degree of fluorination. Comparative studies of the deposition of tungsten oxide by chemical vapor deposition (CVD) and aerosol-assisted CVD were carried out using WO(OC(CF₃)₂CH₃)₃(hfac) as a single-source precursor. WO_x materials were successfully deposited by both deposition methods, but the deposits differed in morphology, structure, and crystallinity.

Mixed-valent, heteroleptic homometallic diketonates as templates for the design of volatile heterometallic precursors

A novel series of mixed-valent, heteroleptic transition metal diketonates that can be utilized as prospective single-source precursors for the low-temperature preparation of oxide materials are reported. The first mixed-valent iron β-diketonates with different FeIII/FeII ratios have been synthesized by applying the mixed-ligand approach. Based on nearly quantitative reaction yields and analysis of iron-oxygen bonds, these compounds were formulated as [FeIII(acac)3][FeII(hfac)2] (1) and [FeII(hfac)2][FeIII(acac)3][FeII(hfac)2] (2). In the above heteroleptic complexes, the Lewis acidic, coordinatively unsaturated FeII centers chelated by two hfac (hexafluoroacetylacetonate) ligands with electron-withdrawing substituents maintain bridging interactions with oxygen atoms of electron-donating acac (acetylacetonate) groups that chelate the neighboring FeIII atoms. Switching the ligands on FeIII and FeII atoms in starting reagents resulted in the instant ligand exchange between iron centers and in yet another polynuclear homometallic diketonate [FeII(hfac)2][FeIII(acac)2(hfac)][FeII(hfac)2] (3) that adheres to the same bonding pattern as in complexes 1 and 2. The proposed synthetic methodology has been extended to design heterometallic diketonates with different M : M' ratios. Homometallic parent molecules have been used as templates to obtain heterometallic mixed-valent [FeIII(acac)3][MnII(hfac)2] (4) and [NiII(hfac)2][FeIII(acac)3][NiII(hfac)2] (5) complexes. The combination of two different diketonate ligands with electron-donating and electron-withdrawing substituents was found to be crucial for maintaining the above mixed-valent heterometallic assemblies. Theoretical investigation of two possible "isomers", [FeIII(acac)3][MnII(hfac)2] (4) and [MnIII(acac)3][FeII(hfac)2] (4') provided an additional support for the metal site assignment giving a preference of 9.78 kcal mol-1 for the molecule 4. Heterometallic complexes obtained in the course of this study have been found to act as effective single-source precursors for the synthesis of mixed-transition metal oxide materials M x M'2-xO3 and M x M'1-xO. The title highly volatile precursors can be used for the low-temperature preparation of both amorphous and crystalline heterometallic oxides in the form of thin films or nanosized particles that are known to operate as efficient catalysts in oxygen evolution reaction.

Synthesis of nanoparticle/ligand composite thin films by sequential ligand self assembly and surface complex reduction

Nanocomposite thin films consisting of ligand-connected metal nanoparticles were deposited by iteration of ligand assembly, surface complex formation and reduction. This novel and convenient approach combines characteristics of the layer-by-layer (LbL) and the successive ion layer adsorption and reaction (SILAR) techniques. In contrast to classical LbL assembly, the nanoparticle formation is performed in situ, avoiding separate reduction, protection and attachment steps. To demonstrate the versatility of the approach, different metal precursors (Pd, Ag and Au salts) and linkers (1,2-ethanedithiol, 1,4-benzenedithiol and polythiol) were applied. The formation of dithiol-linked nanoparticle films was confirmed by TEM and XPS. By combining the deposition protocol with ion track etched polycarbonate templates, nanotubes and nanowires with high aspect ratios of up to 300 could be fabricated.

Synthesis, spectral and electrochemical studies of Cu(II) and Ni(II) complexes with new N2O2 ligands: a new precursor capable of depositing copper nanoparticles using thermal reduction

Cu(II) and Ni(II) complexes of the general type [M(N2O2)] are described. The N2O2 ligands used are [N,N'-bis(2-hydroxy-6-methoxybenzylidene)propane-1,3-diamine] (HOMeSalpn) and [N,N'-bis(2-hydroxy-6-methoxybenzylidene)propane-1,2-diamine (HOMeSalpr). These complexes have been characterized by IR, UV-vis, CV, TG-DTA and 1H NMR spectroscopy. The electrochemical behavior of these complexes at a glassy carbon electrode in acetonitrile solution indicates that the first reduction process corresponding to Cu(II)-Cu(I) and Ni(II)-Ni(I) is electrochemically irreversible. The new copper complexes have been applied for the preparation of copper nanoparticles using non-ionic surfactant (Triton X-100) by thermal reduction. The copper nanoparticles with average size of 48nm were formed by thermal reduction of [N,N'-bis(2-hydroxy-6-methoxybenzylidene)propane-1,3-diamine]copper(II) in the presence of triphenylphosphine thus releasing the reduced copper and affording the high-purity copper nanoparticles.

Selective electroless metallization of patterned polymeric films for lithography applications

The fabrication of electrical interconnects to provide power for and communication with computers as their component complementary metal oxide semiconductor (CMOS) devices continue to shrink in size presents significant materials and processing compatibility challenges. We describe here our efforts to address these challenges using top-surface imaging and hybrid photoresist/self-assembled monolayer patterning approaches, in conjunction with selective electroless metal deposition, to develop processes capable of fabricating appropriate submicron and nanoscale metal features useful as electrical interconnects, as well as plasma-etch-resistant masks and metal diffusion barriers. Our efforts focus on the development of cost-effective methods compatible with a manufacturing environment that satisfy materials and process constraints associated with CMOS device production. We demonstrate the fabrication of approximately 50-nm-width features in metal with high fidelity and sufficient control of edge acuity to satisfy current industry design rules using our processes and discuss the challenges and opportunities for fabrication of analogous sub-10-nm metal features.

Synthesis and characterisation of zirconium–amido guanidinato complex: a potential precursor for ZrO2thin films

A new zirconium complex, bis-(ethylmethylamido)-bis-(N,N'-diisopropyl-2-ethylmethylamidoguanidinato)-zirconium(iv) {[(N(i)Pr)(2)C(NEtMe)](2)Zr(NEtMe)(2)}, was synthesised by partial replacement of amide ligands with bidentate guanidinate ligands. The monomeric Zr complex was characterised by (1)H-NMR, (13)C-NMR, EI-MS, elemental analysis, and single crystal X-ray diffraction studies. The thermal properties of the compound was studied by thermogravimetric and differential thermal analysis (TG/DTA). The new Zr compound is thermally stable and can be sublimed quantitatively which renders it promising for thin film growth using vapor deposition techniques like chemical vapor deposition (CVD) and atomic layer deposition (ALD). The use of this complex for CVD of ZrO(2) on Si(100) substrates was attempted in combination with oxygen as the oxidant. Stoichiometric ZrO(2) films with preferred orientation at lower growth temperatures was obtained and the films were almost carbon free. The preliminary electrical characterisation of ZrO(2) films showed encouraging results for possible applications in dielectric oxide structures.