1
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Chen ZY, Ren X, Hu HL, Liu M, Liu Y, Jiang FL. ZnSeTe quantum dots modified with zinc chloride toward bright trap-state emission. Phys Chem Chem Phys 2024; 26:17182-17190. [PMID: 38847738 DOI: 10.1039/d4cp01109k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
ZnSeTe quantum dots (QDs) attract growing interest owing to their low threats to health and the environment. They are widely applied as emitters in displays and lighting devices. Previous findings have indicated that inorganic halides are excellent candidates for surface ligands on QDs. By incorporating inorganic halides during the synthesis process, the photoluminescence (PL) intensity and quantum yield (QY) of QDs can be significantly enhanced. However, the alteration of surface states in QDs induced by zinc halide modification and the mechanism of formation of trap-state radiative recombination processes have been less discussed. Herein, we proposed a synthesis strategy for ZnSeTe/ZnSe/ZnSeS/ZnS core/shell/shell/shell QDs modified with ZnCl2, and by comparing the morphology and elemental composition of QDs with different amounts of ZnCl2 added, we revealed the regulatory mechanism of nanocrystal growth in the presence of ZnCl2. QDs with modification of ZnCl2 exhibited broad yellow fluorescence, distinct from the intrinsic blue emission. Through spectroscopic and surface ligand analyses, we attributed this yellow emission to the intermediate state energy levels caused by the defects on the surface. Finally, we used the QDs with broad linewidth emission to fabricate a simple white-light-emitting diode (WLED). This work provided new insights into the role of inorganic ligands and the use of a single emitting material in solid-state lighting devices.
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Affiliation(s)
- Zhe-Yong Chen
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xue Ren
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Hui-Ling Hu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Meng Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Yi Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
- State Key Laboratory of Separation Membranes and Membrane Processes, School of Chemistry, Tiangong University, Tianjin 300387, P. R. China
| | - Feng-Lei Jiang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
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2
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Stam M, Almeida G, Ubbink RF, van der Poll LM, Vogel YB, Chen H, Giordano L, Schiettecatte P, Hens Z, Houtepen AJ. Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF 3 Treatment. ACS NANO 2024; 18:14685-14695. [PMID: 38773944 PMCID: PMC11155241 DOI: 10.1021/acsnano.4c03290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Revised: 05/06/2024] [Accepted: 05/15/2024] [Indexed: 05/24/2024]
Abstract
Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.
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Affiliation(s)
- Maarten Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Guilherme Almeida
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Reinout F. Ubbink
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Lara M. van der Poll
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Yan B. Vogel
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Hua Chen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Luca Giordano
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Pieter Schiettecatte
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Zeger Hens
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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3
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Valleix R, Zhang W, Jordan AJ, Guillemeney L, Castro LG, Zekarias BL, Park SV, Wang O, Owen JS. Metal Fluorides Passivate II-VI and III-V Quantum Dots. NANO LETTERS 2024; 24:5722-5728. [PMID: 38712788 DOI: 10.1021/acs.nanolett.4c00610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Quantum dots (QDs) with metal fluoride surface ligands were prepared via reaction with anhydrous oleylammonium fluoride. Carboxylate terminated II-VI QDs underwent carboxylate for fluoride exchange, while InP QDs underwent photochemical acidolysis yielding oleylamine, PH3, and InF3. The final photoluminescence quantum yield (PLQY) reached 83% for InP and near unity for core-shell QDs. Core-only CdS QDs showed dramatic improvements in PLQY, but only after exposure to air. Following etching, the InP QDs were bound by oleylamine ligands that were characterized by the frequency and breadth of the corresponding ν(N-H) bands in the infrared absorption spectrum. The fluoride content (1.6-9.2 nm-2) was measured by titration with chlorotrimethylsilane and compared with the oleylamine content (2.3-5.1 nm-2) supporting the formation of densely covered surfaces. The influence of metal fluoride adsorption on the air stability of QDs is discussed.
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Affiliation(s)
- Rodolphe Valleix
- Department of Chemistry, Columbia University, New York, New York 10027, United States
- Univ. Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, Lyon, 69342, France
| | - William Zhang
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Abraham J Jordan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Lilian Guillemeney
- Univ. Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, Lyon, 69342, France
| | - Leslie G Castro
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Bereket L Zekarias
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sungho V Park
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Oliver Wang
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Jonathan S Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
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4
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Hai Y, Gahlot K, Tanchev M, Mutalik S, Tekelenburg EK, Hong J, Ahmadi M, Piveteau L, Loi MA, Protesescu L. Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dots. J Am Chem Soc 2024; 146:12808-12818. [PMID: 38668701 PMCID: PMC11082887 DOI: 10.1021/jacs.4c03325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/17/2024] [Accepted: 04/17/2024] [Indexed: 05/09/2024]
Abstract
The surface chemistry of colloidal semiconductor nanocrystals (QDs) profoundly influences their physical and chemical attributes. The insulating organic shell ensuring colloidal stability impedes charge transfer, thus limiting optoelectronic applications. Exchanging these ligands with shorter inorganic ones enhances charge mobility and stability, which is pivotal for using these materials as active layers for LEDs, photodetectors, and transistors. Among those, InP QDs also serve as a model for surface chemistry investigations. This study focuses on group III metal salts as inorganic ligands for InP QDs. We explored the ligand exchange mechanism when metal halide, nitrate, and perchlorate salts of group III (Al, In Ga), common Lewis acids, are used as ligands for the conductive inks. Moreover, we compared the exchange mechanism for two starting model systems: InP QDs capped with myristate and oleylamine as X- and L-type native organic ligands, respectively. We found that all metal halide, nitrate, and perchlorate salts dissolved in polar solvents (such as n-methylformamide, dimethylformamide, dimethyl sulfoxide, H2O) with various polarity formed metal-solvent complex cations [M(Solvent)6]3+ (e.g., [Al(MFA)6]3+, [Ga(MFA)6]3+, [In(MFA)6]3+), which passivated the surface of InP QDs after the removal of the initial organic ligand. All metal halide capped InP/[M(Solvent)6]3+ QDs show excellent colloidal stability in polar solvents with high dielectric constant even after 6 months in concentrations up to 74 mg/mL. Our findings demonstrate the dominance of dissociation-complexation mechanisms in polar solvents, ensuring colloidal stability. This comprehensive understanding of InP QD surface chemistry paves the way for exploring more complex QD systems such as InAs and InSb QDs.
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Affiliation(s)
- Yun Hai
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Kushagra Gahlot
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Mark Tanchev
- Institute
of Chemistry and Chemical Engineering, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Suhas Mutalik
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Eelco K. Tekelenburg
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Jennifer Hong
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Laura Piveteau
- Institute
of Chemistry and Chemical Engineering, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Maria Antonietta Loi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
| | - Loredana Protesescu
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands
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5
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Lee YJ, Kim S, Lee J, Cho E, Won YH, Kim T, Kim D. Crystallographic and Photophysical Analysis on Facet-Controlled Defect-Free Blue-Emitting Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311719. [PMID: 38214475 DOI: 10.1002/adma.202311719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 12/21/2023] [Indexed: 01/13/2024]
Abstract
The burgeoning demand for commercializing self-luminescing quantum dot (QD) light-emitting diodes (LEDs) has stimulated extensive research into environmentally friendly and efficient QD materials. Hydrofluoric acid (HF) additive improves photoluminescence (PL) properties of blue-emitting ZnSeTe QDs, ultimately reaching a remarkable quantum yield (QY) of 97% with an ultranarrow peak width of 14 nm after sufficient HF addition. The improvement in optical properties of the QDs is accompanied by a morphology change of the particles, forming cubic-shaped defect-free ZnSeTe QDs characterized by a zinc blende (ZB) crystal structure. This treatment improves the QD-emitting properties by facilitating facet-specific growth, selectively exposing stabilized (100) facets, and reducing the lattice disorders. The facet-specific growth process gives rise to defect-free monodispersed cubic dots that exhibit remarkably narrow and homogeneous PL spectra. Meticulous time-resolved spectroscopic studies allow an understanding of the correlation between ZnSeTe QDs' particle shape and performance following HF addition. These investigations shed light on the intricacies of the growth mechanism and the factors influencing the PL efficiency of the resulting QDs. The findings significantly contribute to understanding the role of HF treatment in tailoring the optical properties of ZnSeTe QDs, thereby bringing it closer to the realization of highly efficient and bright QD-LEDs for various practical applications.
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Affiliation(s)
- Yu Jin Lee
- Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry, Yonsei University, Seoul, 03722, South Korea
| | - Sungwoo Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Junho Lee
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Eunseog Cho
- CSE Team, Samsung Electronics, Hwaseong, 18848, South Korea
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Taehyung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, South Korea
| | - Dongho Kim
- Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry, Yonsei University, Seoul, 03722, South Korea
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6
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Hou Q, Du Z, Sun Z, Kong J, Huang Y, Wang K, Ning J, Tang J. Pseudohalogen Ammonium Salt-Assisted Syntheses of Large-Sized Indium Phosphide Quantum Dots with Near-Infrared Photoluminescence. J Phys Chem Lett 2024:3285-3293. [PMID: 38489757 DOI: 10.1021/acs.jpclett.4c00158] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/17/2024]
Abstract
The development of indium phosphide (InP)-based quantum dots (QDs) with a near-infrared (NIR) emission area still lags behind the visible wavelength region and remains problematic. This study describes a one-step in situ pseudohalogen ammonium salt-assisted approach to generate NIR-emitted InP-based QDs with high photoluminescence quantum yields (PLQYs). The coexistence of NH4+ and PF6- ions from NH4PF6 may in situ synchronously etch and passivate the surface oxides and impede the creation of traps under the whole growth process of InP QDs. Experimental findings demonstrated that the in situ pseudohalogen ammonium salt-assisted syntheses technique may feature emission at a full width at half-maximum (fwhm) peak as fine as ∼45 nm and broaden the emission range to around ∼780 nm. A two-step approach for ZnS shells was developed to further improve the PLQY of NIR-emitted InP QDs. Furthermore, the constructed high-power intrinsically stretchable NIR color-conversion film employing the InP-based QDs/polymer composites presented excellent luminescence conversion ability and stretchability.
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Affiliation(s)
- Qinggang Hou
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Zhonglin Du
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Zhe Sun
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Jiahua Kong
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Yixiao Huang
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Keke Wang
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
| | - Jiajia Ning
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Jianguo Tang
- Institute of Hybrid Materials, National Center of International Joint Research for Hybrid Materials Technology, National Base of International Sci. & Tech. Cooperation on Hybrid Materials, College of Materials Science and Engineering, Qingdao University, 308 Ningxia Road, Qingdao 266071, P. R. China
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7
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Laukkanen P, Punkkinen M, Kuzmin M, Kokko K, Liu X, Radfar B, Vähänissi V, Savin H, Tukiainen A, Hakkarainen T, Viheriälä J, Guina M. Bridging the gap between surface physics and photonics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044501. [PMID: 38373354 DOI: 10.1088/1361-6633/ad2ac9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
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Affiliation(s)
- Pekka Laukkanen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Marko Punkkinen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Mikhail Kuzmin
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Kalevi Kokko
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Xiaolong Liu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Behrad Radfar
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Antti Tukiainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Teemu Hakkarainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Jukka Viheriälä
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
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8
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Segura Lecina O, Newton MA, Green PB, Albertini PP, Leemans J, Marshall KP, Stoian D, Loiudice A, Buonsanti R. Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth. JACS AU 2023; 3:3066-3075. [PMID: 38034959 PMCID: PMC10685429 DOI: 10.1021/jacsau.3c00457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 10/18/2023] [Accepted: 10/18/2023] [Indexed: 12/02/2023]
Abstract
Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions. Colloidal atomic layer deposition (c-ALD) has been recently proposed as a methodology to grow hybrid materials including QDs and organic/inorganic oxide shells, which possess new functions compared to those of the as-synthesized QDs. Here, we demonstrate that ZnO shells can be grown on InP QDs obtained via two synthetic routes, which are the classical sylilphosphine-based route and the more recently developed aminophosphine-based one. We find that the ZnO shell increases the photoluminescence emission only in the case of aminophosphine-based InP QDs. We rationalize this result with the different chemistry involved in the nucleation step of the shell and the resulting surface defect passivation. Furthermore, we demonstrate that the ZnO shell prevents degradation of the InP QD suspension under ambient conditions by avoiding moisture-induced displacement of the ligands from their surface. Overall, this study proposes c-ALD as a methodology for the synthesis of alternative InP-based core@shell QDs and provides insight into the surface chemistry that results in both enhanced photoluminescence and stability required for application in optoelectronic devices and bioimaging.
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Affiliation(s)
- Ona Segura Lecina
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Mark A. Newton
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Philippe B. Green
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Petru P. Albertini
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Jari Leemans
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Kenneth P. Marshall
- The
Swiss-Norwegian Beamlines, European Synchrotron
Radiation Facility (ESRF), 38000 Grenoble, France
| | - Dragos Stoian
- The
Swiss-Norwegian Beamlines, European Synchrotron
Radiation Facility (ESRF), 38000 Grenoble, France
| | - Anna Loiudice
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
| | - Raffaella Buonsanti
- Laboratory
of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences
and Engineering (ISIC), École Polytechnique
Fédérale de Lausanne, CH-1950 Sion, Switzerland
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9
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Yuan C, He M, Liao X, Liu M, Zhang Q, Wan Q, Qu Z, Kong L, Li L. Interface defects repair of core/shell quantum dots through halide ion penetration. Chem Sci 2023; 14:13119-13125. [PMID: 38023521 PMCID: PMC10664535 DOI: 10.1039/d3sc04136k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 10/31/2023] [Indexed: 12/01/2023] Open
Abstract
The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.
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Affiliation(s)
- Changwei Yuan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mengda He
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Xinrong Liao
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mingming Liu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qinggang Zhang
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qun Wan
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
| | - Zan Qu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Long Kong
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Liang Li
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
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10
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Imran M, Paritmongkol W, Mills HA, Hassan Y, Zhu T, Wang YK, Liu Y, Wan H, Park SM, Jung E, Tam J, Lyu Q, Cotella GF, Ijaz P, Chun P, Hoogland S. Molecular-Additive-Assisted Tellurium Homogenization in ZnSeTe Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303528. [PMID: 37450343 DOI: 10.1002/adma.202303528] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Revised: 06/23/2023] [Accepted: 06/30/2023] [Indexed: 07/18/2023]
Abstract
Addition of aqueous hydrohalic acids during the synthesis of colloidal quantum dots (QDs) is widely employed to achieve high-quality QDs. However, this reliance on the use of aqueous solutions is incompatible with oxygen- and water-sensitive precursors such as those used in the synthesis of Te-alloyed ZnSe QDs. Herein, it is shown that this incompatibility leads to phase segregation into Te-rich and Te-poor regions, causing spectral broadening and luminescence peak shifting under high laser irradiation and applied electrical bias. Here, a synthetic strategy to produce anhydrous-HF in situ by using benzenecarbonyl fluoride (BF) as a chemical additive is reported. Through in situ 19 F NMR spectroscopy, it is found that BF reacts with surfactants in tandem, ultimately producing intermediary F···H···trioctylamine adducts. These act as a pseudo-HF source that releases anhydrous HF. The controlled release of HF during nucleation and growth steps homogenizes Te distribution in ZnSeTe lattice, leading to spectrally stable blue-emitting QDs under increasing laser flux from ≈3 µW to ≈12 mW and applied bias from 2.6 to 10 V. Single-dot photoluminescence (PL) spectroscopy and analyses of the absorption, PL and transient absorption spectra together with density functional theory point to the role of anhydrous HF as a Te homogenizer.
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Affiliation(s)
- Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Watcharaphol Paritmongkol
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Harrison A Mills
- Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
| | - Yasser Hassan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
- Department of Chemistry and Earth Sciences, College of Arts and Sciences, Qatar University, Doha, 2713, Qatar
| | - Tong Zhu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ya-Kun Wang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yuan Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Haoyue Wan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - So Min Park
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Euidae Jung
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jason Tam
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Quan Lyu
- Huawei Technologies Research & Development (UK) Ltd., 101 Science Park, Milton Road, Cambridge, CB4 0FY, UK
| | - Giovanni Francesco Cotella
- Huawei Technologies Research and Development (UK) Limited, Phoenix House, B55 Adastral Park, Martlesham Heath, Ipswich, IP5 3RE, UK
| | - Palvasha Ijaz
- Department of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
| | - Peter Chun
- Allstate Pkwy, Huawei Technologies, Markham, Ontario, L3R 5A4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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11
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Almeida G, van der Poll L, Evers WH, Szoboszlai E, Vonk SJW, Rabouw FT, Houtepen AJ. Size-Dependent Optical Properties of InP Colloidal Quantum Dots. NANO LETTERS 2023; 23:8697-8703. [PMID: 37672486 PMCID: PMC10540257 DOI: 10.1021/acs.nanolett.3c02630] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Revised: 08/25/2023] [Indexed: 09/08/2023]
Abstract
Indium phosphide colloidal quantum dots (CQDs) are the main alternative for toxic and restricted Cd based CQDs for lighting and display applications. Here we systematically report on the size-dependent optical absorption, ensemble, and single particle photoluminescence (PL) and biexciton lifetimes of core-only InP CQDs. This systematic study is enabled by improvements in the synthesis of InP CQDs to yield a broad size series of monodisperse core-only InP CQDs with narrow absorption and PL line width and significant PL quantum yield.
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Affiliation(s)
- Guilherme Almeida
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Lara van der Poll
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Wiel H. Evers
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Emma Szoboszlai
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Sander J. W. Vonk
- Debye
Institute for Nanomaterials Science, Utrecht
University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Freddy T. Rabouw
- Debye
Institute for Nanomaterials Science, Utrecht
University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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12
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Stam M, du Fossé I, Infante I, Houtepen AJ. Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots. ACS NANO 2023; 17:18576-18583. [PMID: 37712414 PMCID: PMC10540256 DOI: 10.1021/acsnano.3c07029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 09/12/2023] [Indexed: 09/16/2023]
Abstract
Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.
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Affiliation(s)
- Maarten Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Ivan Infante
- BC
Materials, Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa 48940, Spain
- Ikerbasque,
Basque Foundation for Science, Bilbao 48009, Spain
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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13
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Chen T, Chen Y, Li Y, Liang M, Wu W, Wang Y. A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5039. [PMID: 37512312 PMCID: PMC10384050 DOI: 10.3390/ma16145039] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 07/07/2023] [Accepted: 07/12/2023] [Indexed: 07/30/2023]
Abstract
I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn2+, Mn2+ and Cu+) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.
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Affiliation(s)
- Ting Chen
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Yuanhong Chen
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Youpeng Li
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Mengbiao Liang
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Wenkui Wu
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Yude Wang
- National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650504, China
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14
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Yadav R, Kwon Y, Rivaux C, Saint-Pierre C, Ling WL, Reiss P. Narrow Near-Infrared Emission from InP QDs Synthesized with Indium(I) Halides and Aminophosphine. J Am Chem Soc 2023; 145:5970-5981. [PMID: 36866828 DOI: 10.1021/jacs.2c13834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/04/2023]
Abstract
Nonpyrophoric aminophosphines reacted with indium(III) halides in the presence of zinc chloride have emerged as promising phosphorus precursors in the synthesis of colloidal indium phosphide (InP) quantum dots (QDs). Nonetheless, due to the required P/In ratio of 4:1, it remains challenging to prepare large-sized (>5 nm), near-infrared absorbing/emitting InP QDs using this synthetic scheme. Furthermore, the addition of zinc chloride leads to structural disorder and the formation of shallow trap states inducing spectral broadening. To overcome these limitations, we introduce a synthetic approach relying on the use of indium(I) halide, which acts as both the indium source and reducing agent for aminophosphine. The developed zinc-free, single-injection method gives access to tetrahedral InP QDs with an edge length > 10 nm and narrow size distribution. The first excitonic peak is tunable from 450 to 700 nm by changing the indium halide (InI, InBr, InCl). Kinetic studies using phosphorus NMR reveal the coexistence of two reaction pathways, the reduction of transaminated aminophosphine by In(I) and via redox disproportionation. Etching the surface of the obtained InP QDs at room temperature with in situ-generated hydrofluoric acid (HF) leads to strong photoluminescence (PL) emission with a quantum yield approaching 80%. Alternatively, surface passivation of the InP core QDs was achieved by low-temperature (140 °C) ZnS shelling using the monomolecular precursor zinc diethyldithiocarbamate. The obtained InP/ZnS core/shell QDs that emit in a range of 507-728 nm exhibit a small Stokes shift (110-120 meV) and a narrow PL line width (112 meV at 728 nm).
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Affiliation(s)
- Ranjana Yadav
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, 38000 Grenoble, France
| | - Yongju Kwon
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, 38000 Grenoble, France
| | - Céline Rivaux
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, 38000 Grenoble, France
| | | | - Wai Li Ling
- Univ. Grenoble Alpes, CEA, CNRS, IBS, 38000 Grenoble, France
| | - Peter Reiss
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, 38000 Grenoble, France
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