Emerging Chalcohalide Materials for Energy Applications

Photocatalytic reduction of carbon dioxide by BiTeX (X = Cl, Br, I) under visible-light irradiation

In this study, a series of BiTeX (X = Cl, Br, I) photocatalysts were successfully synthesized via a simple hydrothermal method. The synthesis process involved dissolving BiX3 and Te powder in toluene to identify the most efficient material for photocatalytic activity. The main objective of this approach is to facilitate the conversion of carbon dioxide into sustainable solar fuels, such as alcohols and hydrocarbons, offering an appealing solution to address environmental concerns and energy crises. The BiTeX photocatalysts demonstrated significant proficiency in converting CO2 into CH4, particularly BiTeCl exhibited a notable photocatalytic conversion rate of up to 0.51 μmolg-1h-1. The optimized BiTeX photocatalysts displayed a gradual and selective transition from CO2 to CH4, ultimately producing valuable hydrocarbons (C2+). Furthermore, owing to their ability to reduce CO2, these photocatalysts show promise as materials for mitigating environmental pollution.

Prospective Chalcohalide Perovskites: Pursuing (and Failing) the Synthesis of CsBiSCl2 Nanocrystals

Heavy pnictogen chalcohalides are often termed lead-free, perovskite-inspired materials. Despite theoretical predictions, incontrovertible experimental demonstrations of heavy pnictogen chalcohalides adopting a perovskite structure are lacking. Here we report our attempts to prepare CsBiSCl2 adopting a perovskite structure as colloidal nanocrystals. Synthesis of nanoscale materials can indeed rely on fast, nonequilibrium reactions and on large, eventually thermodynamically favorable surface energies, leading to the possibility of stabilizing kinetically trapped or metastable phases. However, we obtained no CsBiSCl2, but a mixture of nanocrystals of secondary phases, namely Cs3BiCl6 submicrometric polyhedra, Bi2S3 nanoscopic rods, and Cs3Bi2Cl9 nanoscopic dots, whose low polydispersity enabled an effective separation via size/shape selective precipitation. This work confirms that heavy pnictogen chalcohalides are hardly prone to adopting a perovskite structure. Nevertheless, chemistry at the nanoscale offers multiple possibilities for overcoming phase segregation and pursuing the synthesis of prospective mixed anion compound semiconductors.

Tuning the optoelectronic properties of emerging solar absorbers through cation disorder engineering

Chalcogenide solar absorbers, such as AgBiS2 and kesterites, have gained a resurgence of interest recently, owing to their high stability compared to metal-halide compounds, as well as their rising efficiencies in photovoltaic devices. Although their optical and electronic properties are conventionally tuned through the composition and structure, cation disorder has increased in prominence as another important parameter that influences these properties. In this minireview, we define cation disorder as the occupation of a cation crystallographic site with different species, and the homogeneity of this cation disorder as how regular the alternation of species in this site is. We show that cation disorder is not necessarily detrimental, and can lead to increases in absorption coefficient and reductions in bandgap, enabling the development of ultrathin solar absorbers for lightweight photovoltaics. Focusing on kesterites and ABZ2 materials (where A = monovalent cation, B = divalent cation, and Z is a chalcogenide anion), we discuss how the degree and homogeneity of cation disorder influences the optical properties, charge-carrier transport and photovoltaic performance of these materials, as well as how cation disorder could be tuned and quantified. We finish with our perspectives on the important questions moving forward in making use of cation disorder engineering as a route to achieve more efficient solar absorbers.

Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation

Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.

Lead-Free Semiconductors: Phase-Evolution and Superior Stability of Multinary Tin Chalcohalides

Tin-based semiconductors are highly desirable materials for energy applications due to their low toxicity and biocompatibility relative to analogous lead-based semiconductors. In particular, tin-based chalcohalides possess optoelectronic properties that are ideal for photovoltaic and photocatalytic applications. In addition, they are believed to benefit from increased stability compared with halide perovskites. However, to fully realize their potential, it is first necessary to better understand and predict the synthesis and phase evolution of these complex materials. Here, we describe a versatile solution-phase method for the preparation of the multinary tin chalcohalide semiconductors Sn2SbS2I3, Sn2BiS2I3, Sn2BiSI5, and Sn2SI2. We demonstrate how certain thiocyanate precursors are selective toward the synthesis of chalcohalides, thus preventing the formation of binary and other lower order impurities rather than the preferred multinary compositions. Critically, we utilized 119Sn ssNMR spectroscopy to further assess the phase purity of these materials. Further, we validate that the tin chalcohalides exhibit excellent water stability under ambient conditions, as well as remarkable resistance to heat over time compared to halide perovskites. Together, this work enables the isolation of lead-free, stable, direct band gap chalcohalide compositions that will help engineer more stable and biocompatible semiconductors and devices.

Suppressing Deep-Level Trap Toward Over 13% Efficient Solution-Processed Kesterite Solar Cell

Cu2ZnSn (S,Se)4 (CZTSSe), a promising absorption material for thin-film solar cells, still falls short of reaching the balance limit efficiency due to the presence of various defects and high defect concentration in the thin film. During the high-temperature selenization process of CZTSSe, the diffusion of various elements and chemical reactions significantly influence defect formation. In this study, a NaOH-Se intermediate layer introduced at the back interface can optimize Cu2ZnSnS4 (CZTS)precursor films and subsequently adjust the Se and alkali metal content to favor grain growth during selenization. Through this back interface engineering, issues such as non-uniform grain arrangement on the surface, voids in bulk regions, and poor contact at the back interface of absorber layers are effectively addressed. This method not only optimizes morphology but also suppresses deep-level defect formation, thereby promoting carrier transport at both interfaces and bulk regions of the absorber layer. Consequently, CZTSSe devices with a NaOH-Se intermediate layer improved fill factor, open-circuit voltage, and efficiency by 13.3%. This work initiates from precursor thin films via back interface engineering to fabricate high-quality absorber layers while advancing the understanding regarding the role played by intermediate layers at the back interface of kesterite solar cells.

Facile Approach for Metallic Precursor Engineering for Efficient Kesterite Thin-Film Solar Cells

Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process. Specifically, Ag-included metallic precursors promote the growth of larger grains and a denser microstructure in CZTSSe thin films compared to those without Ag. Moreover, the improved uniformity of Ag, facilitated by the evaporation deposition technique, significantly suppresses the formation of detrimental defects and related defect clusters. This suppression effectively reduces nonradiative recombination, resulting in enhanced performance in kesterite TFSCs. This study not only introduces a metallic precursor engineering strategy for efficient kesterite-based TFSCs but also accelerates the development of microstructure evolution from metallic stacked precursors to metal chalcogenide compounds.

Growth of BiSBr Microsheet Arrays for Enhanced Photovoltaics Performance

In this study, single-crystalline BiSBr is synthesized using a solution-based approach and conducted a systematic characterization of its photoelectric properties and photovoltaic performances. UV photoelectron spectroscopy and density functional theory (DFT) calculations reveal that BiSBr is an indirect p-type semiconductor, characterized by distinct positions and compositions of the valence band maximum and conduction band minimum. The BiSBr single crystal microrod features a significant electrical conductivity of 14 800 S m-1 along the c-axis, denoting minimal carrier resistance in this direction. For photovoltaic performance assessment, the authors successfully fabricated two homogeneous BiSBr films on TiO2 porous substrates: A microsheet array film via physical vapor deposition (PVD) and solvothermal treatment, and a BiSBr microsheet film via PVD and thermal treatment. The solar cell, comprising a BiSBr microsheet array film with an architecture of fluorine-doped tin oxide FTO/TiO2/BiSBr/(I3 -/I-)/Pt, demonstrated a power conversation efficiency of 1.40%, ≈11 times that of BiSBr microsheet film counterpart. These preliminary results underscore the potential of BiSBr microsheet arrays, producible through low-cost solution processes, as adept light absorbers, enhancing photovoltaic efficiency through effective light scattering and promoting efficient electron-hole separation and transport.

Ir Single Atoms Boost Metal-Oxygen Covalency on Selenide-Derived NiOOH for Direct Intramolecular Oxygen Coupling

This investigation probes the intricate interplay of catalyst dynamics and reaction pathways during the oxygen evolution reaction (OER), highlighting the significance of atomic-level and local ligand structure insights in crafting highly active electrocatalysts. Leveraging a tailored ion exchange reaction followed by electrochemical dynamic reconstruction, we engineered a novel catalytic structure featuring single Ir atoms anchored to NiOOH (Ir1@NiOOH). This novel approach involved the strategic replacement of Fe with Ir, facilitating the transition of selenide precatalysts into active (oxy)hydroxides. This elemental substitution promoted an upward shift in the O 2p band and intensified the metal-oxygen covalency, thereby altering the OER mechanism toward enhanced activity. The shift from a single-metal site mechanism (SMSM) in NiOOH to a dual-metal-site mechanism (DMSM) in Ir1@NiOOH was substantiated by in situ differential electrochemical mass spectrometry (DEMS) and supported by theoretical insights. Remarkably, the Ir1@NiOOH electrode exhibited exceptional electrocatalytic performance, achieving overpotentials as low as 142 and 308 mV at current densities of 10 and 1000 mA cm-2, respectively, setting a new benchmark for the electrocatalysis of OER.

Superior Visible Photoelectric Response with Au/Cu2NiSnS4 Core-Shell Nanocrystals

The incorporation of plasmonic metal nanostructures into semiconducting chalcogenides in the form of core-shell structures provides a promising approach to enhancing the performance of photodetectors. In this study, we combined Au nanoparticles with newly developed copper-based chalcogenides Cu2NiSnS4 (Au/CNTS) to achieve an ultrahigh optoelectronic response in the visible regime. The high-quality Au/CNTS core-shell nanocrystals (NCs) were synthesized by developing a unique colloidal hot-injection method, which allowed for excellent control over sizes, shapes, and elemental compositions. The as-synthesized Au/CNTS hybrid core-shell NCs exhibited enhanced optical absorption, carrier extraction efficiency, and improved photosensing performance owing to the plasmonic-induced resonance energy transfer effect of the Au core. This effect led to a significant increase in the carrier density of the Au/CNTS NCs, resulting in a measured responsivity of 1.2 × 103 AW-1, a specific detectivity of 6.2 × 1011 Jones, and an external quantum efficiency of 3.8 × 105 % at an incident power density of 318.5 μW cm-2. These results enlighten a new era in the development of plasmonic core-shell nanostructure-based visible photodetectors.

Pinalites: Optical Properties and Quantum Magnetism of Heteroanionic A3MO5X2 Compounds

Heteroanionic compounds, which contain two or more types of anions, have emerged as a promising class of materials with diverse properties and functionalities. In this paper, I review the experimental findings on Ca3ReO5Cl2 and related compounds that exhibit remarkable pleochroism and novel quantum magnetism. I discuss how the heteroanionic coordination affects the optical and magnetic properties by modulating the d-orbital states of the transition metal ions. Subsequently, I compare these materials with other heteroanionic and monoanionic compounds and highlight the potential of A3MO5X2 materials for future exploration of materials and phenomena.

KCN Chemical Etching of van der Waals Sb2Se3 Thin Films Synthesized at Low Temperature Leads to Inverted Surface Polarity and Improved Solar Cell Efficiency

Recent developments in Sb2Se3 van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. Sb2Se3 thin films' versatility in delivering good efficiencies in both superstrate and substrate configurations, coupled with a compatibility with various low-temperature deposition techniques (below 500 °C and often below 350 °C), makes them highly attractive for advanced photovoltaic applications. This study presents a comparative analysis of the most effective chemical etchings developed for related thin film chalcogenide technologies to identify and understand the most appropriate surface chemical treatments for Sb2Se3 in substrate configuration, synthesized using a sequential process at very low temperatures (320 °C). Eight different chemical etchings were tested and investigated, and the results show that only KCN-based solutions lead to an improvement in the solar cell's performance, primarily due to an increase in the fill factor. Surface analysis of the samples shows that KCN etching produces very Sb-rich surfaces that do not affect the properties of the bulk. It is proposed that this Sb-rich interface inverts the surface polarity, creating a "buried junction" with CdS, thereby explaining the improvement of the fill factor of the devices, as confirmed by device modeling. The results of this study underscore the importance of surface management in low-temperature synthesized Sb2Se3 absorbers, where Sb-rich interfaces are crucial for achieving high-efficiency devices. This research contributes to ongoing efforts to improve the performance of Sb2Se3 thin film photovoltaic technology and could pave the way for the development of more efficient solar cells with optimized interfaces.

Solution-processable mixed-anion cluster chalcohalide Rb6Re6S8I8 in a light-emitting diode

Rhenium chalcohalide cluster compounds are a photoluminescent family of mixed-anion chalcohalide cluster materials. Here we report the new material Rb6Re6S8I8, which crystallizes in the cubic space group Fm[Formula: see text]m and contains isolated [Re6S8I6]4- clusters. Rb6Re6S8I8 has a band gap of 2.06(5) eV and an ionization energy of 5.51(3) eV, and exhibits broad photoluminescence (PL) ranging from 1.01 eV to 2.12 eV. The room-temperature PL exhibits a PL quantum yield of 42.7% and a PL lifetime of 77 μs (99 μs at 77 K). Rb6Re6S8I8 is found to be soluble in multiple polar solvents including N,N-dimethylformamide, which enables solution processing of the material into films with thickness under 150 nm. Light-emitting diodes based on films of Rb6Re6S8I8 were fabricated, demonstrating the potential for this family of materials in optoelectronic devices.

Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics

Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.

Efficient Acidic Photoelectrochemical Water Splitting Enabled by Ru Single Atoms Anchored on Hematite Photoanodes

Photoelectrochemical (PEC) water splitting in acidic media holds promise as an efficient approach to renewable hydrogen production. However, the development of highly active and stable photoanodes under acidic conditions remains a significant challenge. Herein, we demonstrate the remarkable water oxidation performance of Ru single atom decorated hematite (Fe2O3) photoanodes, resulting in a high photocurrent of 1.42 mA cm-2 at 1.23 VRHE under acidic conditions. Comprehensive experimental and theoretical investigations shed light on the mechanisms underlying the superior activity of the Ru-decorated photoanode. The presence of single Ru atoms enhances the separation and transfer of photogenerated carriers, facilitating efficient water oxidation kinetics on the Fe2O3 surface. This is achieved by creating additional energy levels within the Fe2O3 bandgap and optimizing the free adsorption energy of intermediates. These modifications effectively lower the energy barrier of the rate-determining step for water splitting, thereby promoting efficient PEC hydrogen production.

Designing complex Pb3SBrxI4-x chalcohalides: tunable emission semiconductors through halide-mixing

Chalcohalides are desirable semiconducting materials due to their enhanced light-absorbing efficiency and stability compared to lead halide perovskites. However, unlike perovskites, tuning the optical properties of chalcohalides by mixing different halide ions into their structure remains to be explored. Here, we present an effective strategy for halide-alloying Pb3SBrxI4-x (1 ≤ x ≤ 3) using a solution-phase approach and study the effect of halide-mixing on structural and optical properties. We employ a combination of X-ray diffraction, electron microscopy, and solid-state NMR spectroscopy to probe the chemical structure of the chalcohalides and determine mixed-halide incorporation. The absorption onsets of the chalcohalides blue-shift to higher energies as bromide replaces iodide within the structure. The photoluminescence maxima of these materials mimics this trend at both the ensemble and single particle fluorescence levels, as observed by solution-phase and single particle fluorescence microscopy, respectively. These materials exhibit superior stability against moisture compared to traditional lead halide perovskites, and IR spectroscopy reveals that the chalcohalide surfaces are terminated by both amine and carboxylate ligands. Electronic structure calculations support the experimental band gap widening and volume reduction with increased bromide incorporation, and provide useful insight into the likely atomic coloring patterns of the different mixed-halide compositions. Ultimately, this study expands the range of tunability that is achievable with chalcohalides, which we anticipate will improve the suitability of these semiconducting materials for light absorbing and emission applications.

Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Bismuth sulfoiodide (BiSI) nanorods: synthesis, characterization, and photodetector application

The nanorods of bismuth sulfoiodide (BiSI) were synthesized at relatively low temperature (393 K) through a wet chemical method. The crystalline one-dimensional (1D) structure of the BiSI nanorods was confirmed using high resolution transmission microscopy (HRTEM). The morphology and chemical composition of the material were examined by applying scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS), respectively. The average diameter of 126(3) nm and length of 1.9(1) µm of the BiSI nanorods were determined. X-ray diffraction (XRD) revealed that prepared material consists of a major orthorhombic BiSI phase (87%) and a minor amount of hexagonal Bi₁₃S₁₈I₂ phase (13%) with no presence of other residual phases. The direct energy band gap of 1.67(1)  eV was determined for BiSI film using diffuse reflectance spectroscopy (DRS). Two types of photodetectors were constructed from BiSI nanorods. The first one was traditional photoconductive device based on BiSI film on stiff glass substrate equipped with Au electrodes. An influence of light intensity on photocurrent response to monochromatic light (λ = 488 nm) illumination was studied at a constant bias voltage. The novel flexible photo-chargeable device was the second type of prepared photodetectors. It consisted of BiSI film and gel electrolyte layer sandwiched between polyethylene terephthalate (PET) substrates coated with indium tin oxide (ITO) electrodes. The flexible self-powered BiSI photodetector exhibited open-circuit photovoltage of 68 mV and short-circuit photocurrent density of 0.11 nA/cm² under light illumination with intensity of 0.127 W/cm². These results confirmed high potential of BiSI nanorods for use in self-powered photodetectors and photo-chargeable capacitors.