Spin-Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

Valley polarization and magnetic anisotropy of two-dimensional Ni2Cl3I3/MoSe2 heterostructures

Two-dimensional (2D) Janus trihalides have attracted widespread attention due to their potential applications in spintronics. In this work, the valley polarization of MoSe2 at the K' and K points can be modulated by Ni2Cl3I3, a new 2D Janus trihalide. The Ni2Cl3I3/MoSe2 heterostructure has an in-plane magnetic anisotropy energy (IMA) and is characterized by three distinct electronic structures: metallic, semiconducting, and half-metallic. It is noted that the semiconducting state features a band gap of 0.07 eV. When spin-orbit coupling (SOC) is considered, valley polarization is exhibited in the Ni2Cl3I3/MoSe2 heterostructure, with the degree of valley polarization varying across different configurations and reaching a maximum value of 4.6 meV. The electronic properties, valley polarization and MAE of the system can be tuned by biaxial strains. The application of a biaxial strain ranging from -6% to +6% can enhance the valley polarization value from 0.9 meV to 12.9 meV. The directions of MAE of the Ni2Cl3I3/MoSe2 heterostructure can be changed at biaxial strains of -6%, +2%, +4% and +6%. The above calculation results show that the heterostructure system possesses rich electronic properties and tunability, with extensive potential applications in the fields of spintronic and valleytronic devices.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

The impact of Rashba spin-orbit coupling in charge-ordered systems

We study the impact of the Rashba spin-orbit coupling (RSOC) on the stability of charge-density wave (CDW) in systems with large electron-phonon coupling (EPC). Here, the EPC is considered in the framework of the Holstein model at the half-filled square lattice. We obtain the phase diagram of the Rashba-Holstein model using the Hartree-Fock mean-field theory, and identify the boundaries of the CDW and Rashba metal phases. We notice that the RSOC disfavors the CDW phase, driving the system to a correlated Rashba metal. Also, we employ a cluster perturbation theory (CPT) approach to investigate the phase diagram beyond the Hartree-Fock approximation. The quantum correlations captured by CPT indicate that the RSOC is even more detrimental to CDW than previously anticipated. That is, the Rashba metal region is observed to be expanded in comparison to the mean-field case. Additionally, we investigate pairing correlations, and the results further strengthen the identification of critical points.

Tunable electronic structures, Rashba splitting, and optical and photocatalytic responses of MSSe-PtO2 (M = Mo, W) van der Waals heterostructures

Binding energies, AIMD simulation and phonon spectra confirm both the thermal and dynamical stabilities of model-I and model-II of MSSe-PtO2 (M = Mo, W) vdWHs. An indirect type-II band alignment in both the models of MSSe-PtO2 vdWHs and a larger Rashba spin splitting in model-II than in model-I provide a platform for experimental design of MSSe-PtO2 vdWHs for optoelectronics and spintronic device applications. Transfer of electrons from the MSSe layer to the PtO2 layer at the interface of MSSe-PtO2 vdWHs makes MSSe (PtO2) p(n)-type. Large absorption in the visible region of MoSSe-PtO2 vdWHs, while blue shifts in WSSe-PtO2 vdWHs are observed. In the case of model-II of MSSe-PtO2 vdWHs, a further blue shift is observed. Furthermore, the photocatalytic response shows that MSSe-PtO2 vdWHs cross the standard water redox potentials confirming their capability to split water into H+/H2 and O2/H2O.

Swarm Smart Meta-Estimator for 2D/2D Heterostructure Design

Two-dimensional (2D) semiconductors are central to many scientific fields. The combination of two semiconductors (heterostructure) is a good way to lift many technological deadlocks. Although ab initio calculations are useful to study physical properties of these composites, their application is limited to few heterostructure samples. Herein, we use machine learning to predict key characteristics of 2D materials to select relevant candidates for heterostructure building. First, a label space is created with engineered labels relating to atomic charge and ion spatial distribution. Then, a meta-estimator is designed to predict label values of heterostructure samples having a defined band alignment (descriptor). To this end, independently trained k-nearest neighbors (KNN) regression models are combined to boost the regression. Then, swarm intelligence principles are used, along with the boosted estimator's results, to further refine the regression. This new "swarm smart" algorithm is a powerful and versatile tool to select, among experimentally existing, computationally studied, and not yet discovered van der Waals heterostructures, the most likely candidate materials to face the scientific challenges ahead.

Recent progress in the theoretical design of two-dimensional ferroelectric materials

Two-dimensional (2D) ferroelectrics (FEs), which maintain stable electric polarization in ultrathin films, are a promising class of materials for the development of various miniature functional devices. In recent years, several 2D FEs with unique properties have been successfully fabricated through experiments. They have been found to exhibit some unique properties either by themselves or when they are coupled with other functional materials (e.g., ferromagnetic materials, materials with 5d electrons, etc.). As a result, several new types of 2D FE functional devices have been developed, exhibiting excellent performance. As a type of newly discovered 2D functional material, the number of 2D FEs and the exploration of their properties are still limited and this calls for further theoretical predictions. This review summarizes recent progress in the theoretical predictions of 2D FE materials and provides strategies for the rational design of 2D FE materials. The aim of this review is to provide guidelines for the design of 2D FE materials and related functional devices.

Exceptional degeneracies in non-Hermitian Rashba semiconductors

Exceptional points (EPs) are spectral degeneracies of non-Hermitian (NH) systems where eigenvalues and eigenvectors coalesce, inducing unique topological phases that have no counterpart in the Hermitian realm. Here we consider an NH system by coupling a two-dimensional semiconductor with Rashba spin-orbit coupling (SOC) to a ferromagnet lead and show the emergence of highly tunable EPs along rings in momentum space. Interestingly, these exceptional degeneracies are the endpoints of lines formed by the eigenvalue coalescence at finite real energy, resembling the bulk Fermi arcs commonly defined at zero real energy. We then show that an in-plane Zeeman field provides a way to control these exceptional degeneracies although higher values of non-Hermiticity are required in contrast to the zero Zeeman field regime. Furthermore, we find that the spin projections also coalescence at the exceptional degeneracies and can acquire larger values than in the Hermitian regime. Finally, we demonstrate that the exceptional degeneracies induce large spectral weights, which can be used as a signature for their detection. Our results thus reveal the potential of systems with Rashba SOC for realizing NH bulk phenomena.

A study of the Rashba effect in two-dimensional ternary compounds ABC monolayers (A = Sb, Bi; B = Se, Te; C = Br; I)

The structure and electronic and spintronic properties of two-dimensional (2D) ternary compounds ABC (A = Sb, Bi; B = Se, Te; C = Br; I) monolayers are investigated using the first-principles method. The ABC monolayers possess typical Janus structures with a considerable potential gradient normal to the surface, inducing intrinsic Rashba spin splitting (RSS) at the conduction band minimum near the Γ point. Among them, the splitting strength of the BiSeI monolayer is the largest and its Rashba coefficient can reach 1.84 eV Å. The projected energy band of the BiSeI monolayer suggests that the RSS state is mainly rooted in the Bi-p_z orbital. The RSS strength can be modulated by applying the in-plane strain. The tensile strain can improve the RSS strength, which is ascribed to the increase of the potential gradient normal to the surface. These results indicate that these 2D ternary compounds have great potential for application in tunable spintronic devices.

Investigations of Optical Functions and Optical Transitions of 2D Semiconductors by Spectroscopic Ellipsometry and DFT

Optical functions and transitions are essential for a material to reveal the light-matter interactions and promote its applications. Here, we propose a quantitative strategy to systematically identify the critical point (CP) optical transitions of 2D semiconductors by combining the spectroscopic ellipsometry (SE) and DFT calculations. Optical functions and CPs are determined by SE, and connected to DFT band structure and projected density of states via equal-energy and equal-momentum lines. The combination of SE and DFT provides a powerful tool to investigate the CP optical transitions, including the transition energies and positions in Brillouin zone (BZ), and the involved energy bands and carries. As an example, the single-crystal monolayer WS₂ is investigated by the proposed method. Results indicate that six excitonic-type CPs can be quantitatively distinguished in optical function of the monolayer WS₂ over the spectral range of 245-1000 nm. These CPs are identified as direct optical transitions from three highest valence bands to three lowest conduction bands at high symmetry points in BZ contributed by electrons in S-3p and W-5d orbitals. Results and discussion on the monolayer WS₂ demonstrate the effectiveness and advantages of the proposed method, which is general and can be easily extended to other materials.