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Cui Q, Zhang D, Gao Y, Fan C, Cai Q, Li H, Wu X, Zhu M, Si J, Dai X, He H, Ye Z. Controlling Interfacial Amidation Reaction Rate to Regulate Crystal Growth toward High-Performance FAPbBr 3-Based Inverted Light-Emitting Diodes. ACS NANO 2024; 18:10609-10617. [PMID: 38569090 DOI: 10.1021/acsnano.4c00639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Controlling interfacial reactions is critical for zinc oxide (ZnO)-based inverted perovskite light-emitting diodes (PeLEDs), boosting the external quantum efficiency (EQE) of the near-infrared device to above 20%. However, violent interfacial reactions between the bromine-based perovskites and ZnO-based films severely limit the performance of inverted green PeLEDs, whose efficiency and stability lag far behind those of their near-infrared counterparts. Here, a controllable interfacial amidation between the bromine-based perovskites and magnesium-doped ZnO (ZnMgO) film utilizing caprylyl sulfobetaine (SFB) is realized. The SFB molecules strongly interact with formamidinium bromide, decelerating the amidation reaction between formamidinium and carboxylate groups on the ZnMgO film, thus regulating the crystallization of FAPbBr3. Combined with the passivation of benzylamine, a FAPbBr3 bulk film directly deposited on a ZnMgO substrate with single-crystal characteristics is obtained, exhibiting a high photoluminescence quantum yield of above 80%. The resultant PeLEDs demonstrate a peak EQE of exceeding 20% at a high luminance of 120,000 cd m-2 and a half lifetime of 26 min at 11,000 cd m-2, representing the state-of-the-art inverted green electroluminescence. This work resolves the crucial issues of violent interfacial reactions and provides a strategy toward inverted green PeLEDs with outstanding performance.
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Affiliation(s)
- Qiaopeng Cui
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Yun Gao
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Chao Fan
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qiuting Cai
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Hongjin Li
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Xiaohui Wu
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Meiyi Zhu
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Junjie Si
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Xingliang Dai
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, China
| | - Haiping He
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, China
| | - Zhizhen Ye
- School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, China
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Shen P, Zhang X, Wu R, Zhang T, Qian L, Xu W, Kang K, Zhao D, Xiang C. Interfacial Regulation toward Efficient CsPbBr 3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11715-11721. [PMID: 38382471 DOI: 10.1021/acsami.3c18816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr3 QDs LED using an emitting buffer layer. Ultrathin CsPbBr3 QD emitters act as the buffer layer to reduce the interface luminescence quenching reaction at the ZnO/upper emitting layer interface, increasing the probability of exciton recombination within the emissive layer and regulating the charge transport, leading to effective carrier recombination. The resulting device exhibits an external quantum efficiency of 13.1%, enhanced by about 4.7 times compared with that without a buffer layer device. This work provides a path to fabricating high-performance inverted PeLEDs.
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Affiliation(s)
- Piaoyang Shen
- College of Materials Science and Engineering, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu 610065, Sichuan China
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xuanyu Zhang
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, 199 Taikang East Road, Yinzhou District, Ningbo 315100, Zhejiang, China
| | - Ruifa Wu
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Ting Zhang
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China
| | - Lei Qian
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China
| | - Wei Xu
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China
| | - Kai Kang
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China
| | - Dewei Zhao
- College of Materials Science and Engineering, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu 610065, Sichuan China
| | - Chaoyu Xiang
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China
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Cao F, Wu Q, Li W, Wang S, Kong L, Zhang J, Zhang X, Li H, Hua W, Rogach AL, Yang X. Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207260. [PMID: 36651021 DOI: 10.1002/smll.202207260] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 01/02/2023] [Indexed: 06/17/2023]
Abstract
Solution-processed perovskite-based light-emitting diodes (PeLEDs) are promising candidates for low-cost, large-area displays, while severe deterioration of the perovskite light-emitting layer occurs during deposition of electron transport layers from solution in an issue. Herein, core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer in PeLED based on quasi-2D PEA2 Csn-1 Pbn Br3n+1 (PEA = phenylethylammonium) perovskite are employed. The deposition of ZnS shell mitigates trap states on ZnO core by anchoring sulfur to oxygen vacancies, and at the same time removes residual hydroxyl groups, which helps to suppress the interfacial trap-assisted non-radiative recombination and the deprotonation reaction between the perovskite layer and ZnO. The core/shell ZnO/ZnS nanoparticles show comparably high electron mobility to pristine ZnO nanoparticles, combined with the reduced energy barrier between the electron transport layer and the perovskite layer, improving the charge injection balance in PeLEDs. As a result, the optimized PeLEDs employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer exhibit high peak luminance reaching 32 400 cd m-2 , external quantum efficiency of 10.3%, and 20-fold extended longevity as compared to the devices utilizing ZnO nanoparticles, which represents one of the highest overall performances for solution-processed PeLEDs.
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Affiliation(s)
- Fan Cao
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Qianqian Wu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Wunan Li
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Xiaoyu Zhang
- College of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Weihong Hua
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
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Hou B, Mocanu FC, Cho Y, Lim J, Feng J, Zhang J, Hong J, Pak S, Park JB, Lee YW, Lee J, Kim BS, Morris SM, Sohn JI, Cha S, Kim JM. Evolution of Local Structural Motifs in Colloidal Quantum Dot Semiconductor Nanocrystals Leading to Nanofaceting. NANO LETTERS 2023; 23:2277-2286. [PMID: 36913627 PMCID: PMC10037336 DOI: 10.1021/acs.nanolett.2c04851] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Revised: 03/06/2023] [Indexed: 06/18/2023]
Abstract
Colloidal nanocrystals (NCs) have shown remarkable promise for optoelectronics, energy harvesting, photonics, and biomedical imaging. In addition to optimizing quantum confinement, the current challenge is to obtain a better understanding of the critical processing steps and their influence on the evolution of structural motifs. Computational simulations and electron microscopy presented in this work show that nanofaceting can occur during nanocrystal synthesis from a Pb-poor environment in a polar solvent. This could explain the curved interfaces and the olivelike-shaped NCs observed experimentally when these conditions are employed. Furthermore, the wettability of the PbS NCs solid film can be further modified via stoichiometry control, which impacts the interface band bending and, therefore, processes such as multiple junction deposition and interparticle epitaxial growth. Our results suggest that nanofaceting in NCs can become an inherent advantage when used to modulate band structures beyond what is traditionally possible in bulk crystals.
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Affiliation(s)
- Bo Hou
- School
of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, Wales CF24 3AA, United Kingdom
| | - Felix Cosmin Mocanu
- Laboratoire
de Physique de l’École Normale Supérieure, ENS,
Université PSL, CNRS, Sorbonne Université, Université
de Paris, 75005 Paris, France
| | - Yuljae Cho
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- University
of Michigan−Shanghai Jiao Tong University Joint Institute,
Shanghai Jiao Tong University, 800 Dong Chuan Road, Minghang District, Shanghai 200240, China
| | - Jongchul Lim
- Graduate
school of energy science and technology, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Jiangtao Feng
- Department
of Environmental Science & Engineering, School of Energy and Power
Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Jingchao Zhang
- Microsoft
Corporation, Redmond, Washington 98073, United States
| | - John Hong
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- School of
Materials Science and Engineering, Kookmin
University, Seoul 02707, Republic of Korea
| | - Sangyeon Pak
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- School
of
Electronic and Electrical Engineering, Hongik
University, Seoul 04066, Republic of Korea
| | - Jong Bae Park
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Young-Woo Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Juwon Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Byung-Sung Kim
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Stephen M. Morris
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Jung Inn Sohn
- Division
of Physics and Semiconductor Science, Dongguk
University-Seoul, Seoul 04620, Republic of Korea
| | - SeungNam Cha
- Department
of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Jong Min Kim
- Department
of Engineering, Electrical Engineering Division, 9 JJ
Thomson Avenue, University of Cambridge, Cambridge CB3 0FA, United Kingdom
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Zou Y, Teng P, Yuan Z, Hu J, Lu Y, Sun B, Gao F, Xu W. Protocol for efficient and self-healing near-infrared perovskite light-emitting diodes. STAR Protoc 2022; 3:101631. [PMID: 36035792 PMCID: PMC9405535 DOI: 10.1016/j.xpro.2022.101631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Preparation of highly efficient and stable perovskite light-emitting diodes (PeLEDs) with reproducible device performance is challenging. This protocol describes steps for fabrication of high-performance and self-healing PeLEDs. These include instructions for synthesis of charge-transporting zinc oxide (ZnO) nanocrystals, step-by-step device fabrication, and control over self-healing of the degraded devices. For complete details on the use and execution of this protocol, please refer to Teng et al. (2021). A protocol to fabricate efficient near-infrared (NIR) PeLEDs Synthesis of high-quality, electron-transporting materials of ZnO nanocrystals (NCs) Details on characterization and control of self-healing properties of the PeLED devices
Publisher’s note: Undertaking any experimental protocol requires adherence to local institutional guidelines for laboratory safety and ethics.
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Affiliation(s)
- Yatao Zou
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Macau 999078, P. R. China
| | - Pengpeng Teng
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Zhongcheng Yuan
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Jingcong Hu
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yue Lu
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Baoquan Sun
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Macau 999078, P. R. China; Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China.
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Weidong Xu
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
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