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Li X, Aftab S, Mukhtar M, Kabir F, Khan MF, Hegazy HH, Akman E. Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions. NANO-MICRO LETTERS 2024; 17:28. [PMID: 39343866 PMCID: PMC11439866 DOI: 10.1007/s40820-024-01501-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2024] [Accepted: 08/05/2024] [Indexed: 10/01/2024]
Abstract
The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These materials are promising candidates for next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures, including quantum dots, nanosheets, nanorods, nanowires, and nanocrystals. Through a thorough analysis of recent literature, the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation. In addition, it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems. This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability, making it a valuable resource for researchers.
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Affiliation(s)
- Xin Li
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, 230037, Anhui, People's Republic of China
- Anhui Laboratory of Advanced Laser Technology, Hefei, 230037, Anhui, People's Republic of China
- Nanhu Laser Laboratory, Changsha, 410015, Hunan, People's Republic of China
| | - Sikandar Aftab
- Department of Semiconductor Systems Engineering and Clean Energy, Sejong University, Seoul, 05006, Republic of Korea.
- Department of Artificial Intelligence and Robotics, Sejong University, Seoul, 05006, Republic of Korea.
| | - Maria Mukhtar
- Department of Semiconductor Systems Engineering and Clean Energy, Sejong University, Seoul, 05006, Republic of Korea
- Department of Artificial Intelligence and Robotics, Sejong University, Seoul, 05006, Republic of Korea
| | - Fahmid Kabir
- School of Engineering Science, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Central Labs, King Khalid University, AlQura'a, P.O. Box 960, 61413, Abha, Saudi Arabia
| | - Erdi Akman
- Scientific and Technological Research and Application Center, Karamanoglu Mehmetbey University, 70100, Karaman, Turkey
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Wang L, Song Y, Wang J, Bi W, Ding L, Liu H, Yang X, Wang Y, Yuan S, Dong Q, Yang D, Fang Y. Rapid Recovery of Degraded Perovskite Single-Crystal Radiation Detectors via Infrared Healing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:44202-44209. [PMID: 39134470 DOI: 10.1021/acsami.4c06568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Radiation detectors based on metal halide perovskite (MHP) single crystals (SCs) have exhibited exceptional sensitivity, low detection limit, and remarkable energy resolution. However, the operational stability issue still dramatically impedes their commercialization due to degradation induced by high-energy irradiation and large bias. Here, we propose an innovative infrared healing strategy to restore the devices that have undergone severe damage from both long-term biasing and X-ray irradiation. Compared to the slow and inefficient intrinsic self-healing process of MHPs, the infrared healing method demonstrates the capacity to achieve rapid recovery of the detection performance of the degraded devices within just 1 h. We reveal that the healing mechanism is mainly related to the reduction of the ion-migration activation energy in MHP SCs under infrared illumination, which promotes the back diffusion of the displaced ions to their original lattice positions and remedies defects. Finally, the healing effect is further confirmed through the gamma-ray spectroscopy acquisition with degraded MHP SCs, whose energy resolution at 59.5 keV of 241Am source is improved from 36% to 12% following infrared illumination. These results present infrared healing as a simple and economic method to extend the service life of MHP SC-based detectors.
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Affiliation(s)
- Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
| | - Yilong Song
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
| | - Jing Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
| | - Weihui Bi
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
| | - Li Ding
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
| | - Hui Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
| | - Xueying Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
| | - Yingqi Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
| | - Shuai Yuan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312366, PR China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312366, PR China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312366, PR China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, PR China
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Tsai CH, Chen WC, Lin YC, Huang YH, Lin KW, Wu JY, Satoh T, Chen WC, Kuo CC. Ultralow-Energy-Consumption Photosynaptic Transistor Utilizing Conjugated Polymers/Perovskite Quantum Dots Nanocomposites With Ligand Density Optimization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402567. [PMID: 39132749 DOI: 10.1002/smll.202402567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 07/18/2024] [Indexed: 08/13/2024]
Abstract
The photosynaptic transistor stands as a promising contender for overcoming the von Neumann bottleneck in the realm of photo-communication. In this context, photonic synaptic transistors is developed through a straightforward solution process, employing an organic semiconducting polymer with pendant-naphthalene-containing side chains (PDPPNA) in combination with ligand-density-engineered CsPbBr3 perovskite quantum dots (PQDs). This fabrication approach allows the devices to emulate fundamental synaptic behaviors, encompassing excitatory postsynaptic current, paired-pulse facilitation, the transition from short-to-long-term memory, and the concept of "learning experience." Notably, the phototransistor, incorporating the blend of the PDPPNA and CsPbBr3 PQDs washed with ethyl acetate, achieved an exceptional memory ratio of 104. Simultaneously, the same device exhibited an impressive paired-pulse facilitation ratio of 223% at a moderate operating voltage of -4 V and an extraordinarily low energy consumption of 0.215 aJ at an ultralow operating voltage of -0.1 mV. Consequently, these low-voltage synaptic devices, constructed with a pendant side-chain engineering of organic semiconductors and a ligand density engineering of PQDs through a simple fabrication process, exhibit substantial potential for replicating the visual memory capabilities of the human brain.
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Affiliation(s)
- Cheng-Hang Tsai
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Wei-Cheng Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Yu-Hang Huang
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Kai-Wei Lin
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Jing-Yang Wu
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
- List Sustainable Digital Transformation Catalyst Collaboration Research Platform (ICReDD List-PF), Institute for Chemical Reaction Design and Discovery, Hokkaido University, Sapporo, 001-0021, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Chi-Ching Kuo
- Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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Kim H, Yoo SM, Ding B, Kanda H, Shibayama N, Syzgantseva MA, Tirani FF, Schouwink P, Yun HJ, Son B, Ding Y, Kim BS, Kim YY, Park J, Syzgantseva OA, Jeon NJ, Dyson PJ, Nazeeruddin MK. Shallow-level defect passivation by 6H perovskite polytype for highly efficient and stable perovskite solar cells. Nat Commun 2024; 15:5632. [PMID: 38965276 PMCID: PMC11224362 DOI: 10.1038/s41467-024-50016-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Accepted: 06/27/2024] [Indexed: 07/06/2024] Open
Abstract
The power conversion efficiency of perovskite solar cells continues to increase. However, defects in perovskite materials are detrimental to their carrier dynamics and structural stability, ultimately limiting the photovoltaic characteristics and stability of perovskite solar cells. Herein, we report that 6H polytype perovskite effectively engineers defects at the interface with cubic polytype FAPbI3, which facilitates radiative recombination and improves the stability of the polycrystalline film. We particularly show the detrimental effects of shallow-level defect that originates from the formation of the most dominant iodide vacancy (VI+) in FAPbI3. Furthermore, additional surface passivation on top of the hetero-polytypic perovskite film results in an ultra-long carrier lifetime exceeding 18 μs, affords power conversion efficiencies of 24.13% for perovskite solar cells, 21.92% (certified power conversion efficiency: 21.44%) for a module, and long-term stability. The hetero-polytypic perovskite configuration may be considered as close to the ideal polycrystalline structure in terms of charge carrier dynamics and stability.
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Affiliation(s)
- Hobeom Kim
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
| | - So-Min Yoo
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Bin Ding
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Hiroyuki Kanda
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Naoyuki Shibayama
- Faculty of Biomedical Engineering, Graduate School of Engineering, Toin University of Yokohama, Yokohama, 225-8503, Japan
| | - Maria A Syzgantseva
- Department of Chemistry, Lomonosov Moscow State University, Moscow, 119991, Russia
- Department of Physics, Mendeleev University of Chemical Technology, Moscow, 125047, Russia
| | - Farzaneh Fadaei Tirani
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Pascal Schouwink
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Hyung Joong Yun
- Research Center for Materials Analysis, Korea Basic Science Institute (KBSI), Daejeon, 34133, Republic of Korea
| | - Byoungchul Son
- Center for Research Equipment, Korea Basic Science Institute (KBSI), Daejeon, 34133, Republic of Korea
| | - Yong Ding
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Beom-Soo Kim
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Young Yun Kim
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Junmo Park
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Olga A Syzgantseva
- Department of Chemistry, Lomonosov Moscow State University, Moscow, 119991, Russia
| | - Nam Joong Jeon
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea.
| | - Paul J Dyson
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
| | - Mohammad K Nazeeruddin
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
- Center of Excellence for Advanced Materials Research (CEAMR), King Abdulaziz University, Jeddah, 21589, Saudi Arabia.
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5
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Xia ZH, Sun YT, Wei Z, Peng Y, Hou Y, Yang S. Cold Pressing of Perovskite-ZIF Glass Interpenetrating Networks with Stable Photoelectric Response. Chemistry 2024; 30:e202401172. [PMID: 38682408 DOI: 10.1002/chem.202401172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2024] [Revised: 04/21/2024] [Accepted: 04/29/2024] [Indexed: 05/01/2024]
Abstract
The protection of lead halide perovskite within a stable matrix normally leads to the loss of semiconducting properties. Here, we report the synthesis of perovskite-ZIF glass interpenetrating networks via a cold pressing method, which allows the advantages of bright photoluminescence, high photoconductivity and environmental stability. This hybrid architecture has provided a novel design strategy for the real-world application of perovskite-based devices.
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Affiliation(s)
- Zhu Hui Xia
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Yu Ting Sun
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Zhanpeng Wei
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Yu Peng
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Yu Hou
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Shuang Yang
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
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Chen G, Dai H, Zhu ZK, Wu J, Yu P, Zeng Y, Zheng Y, Xu L, Luo J. Dion-Jacobson Type Lead-Free Double Perovskite with Ultra-Narrow Aromatic Interlayer Spacing for Highly Sensitive and Stable X-ray Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2312281. [PMID: 38456782 DOI: 10.1002/smll.202312281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/07/2024] [Indexed: 03/09/2024]
Abstract
The low-toxic and environmentally friendly 2D lead-free perovskite has made significant progress in the exploration of "green" X-ray detectors. However, the gap in detection performance between them and their lead-based analogues remains a matter of concern that cannot be ignored. To reduce this gap, shortening the interlayer spacing to accelerate the migration and collection of X-ray carriers is a promising strategy. Herein, a Dion-Jacobson (DJ) lead-free double perovskite (4-AP)2AgBiBr8 (1, 4-AP = 4-amidinopyridine) with an ultra-narrow interlayer spacing of 3.0 Å, is constructed by utilizing π-conjugated aromatic spacers. Strikingly, the subsequent enhanced carrier transport and increased crystal density lead to X-ray detectors based on bulk single crystals of 1 with a high sensitivity of 1117.3 µC Gy-1 cm-2, superior to the vast majority of similar double perovskites. In particular, the tight connection of the inorganic layers by the divalent cations enhances structural rigidity and stability, further endowing 1 detector with ultralow dark current drift (3.06 × 10-8 nA cm-1 s-1 V-1, 80 V), excellent multiple cycles switching X-ray irradiation stability, as well as long-term environmental stability (maintains over 94% photoresponse after 90 days). This work brings lead-free double perovskites one step closer to realizing efficient practical green applications.
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Affiliation(s)
- Guirong Chen
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
| | - Hongliang Dai
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
| | - Zeng-Kui Zhu
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Panpan Yu
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
| | - Ying Zeng
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
| | - Yingying Zheng
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
| | - Lijun Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Junhua Luo
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
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Soopy AKK, Liu SF, Najar A. Enhancement of Photodetector Characteristics by Zn-Porphyrin-Passivated MAPbBr 3 Single Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1068. [PMID: 38998673 PMCID: PMC11243306 DOI: 10.3390/nano14131068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2024] [Revised: 06/17/2024] [Accepted: 06/20/2024] [Indexed: 07/14/2024]
Abstract
Perovskite single crystals have garnered significant interest in photodetector applications due to their exceptional optoelectronic properties. The outstanding crystalline quality of these materials further enhances their potential for efficient charge transport, making them promising candidates for next-generation photodetector devices. This article reports the synthesis of methyl ammonium lead bromide (MAPbBr3) perovskite single crystal (SC) via the inverse-temperature crystallization method. To further improve the performance of the photodetector, Zn-porphyrin (Zn-PP) was used as a passivating agent during the growth of SC. The optical characterization confirmed the enhancement of optical properties with Zn-PP passivation. On single-crystal surfaces, integrated photodetectors are fabricated, and their photodetection performances are evaluated. The results show that the single-crystalline photodetector passivated with 0.05% Zn-PP enhanced photodetection properties and rapid response speed. The photoelectric performance of the device, including its responsivity (R), external quantum efficiency (EQE), detective nature (D), and noise-equivalent power (NEP), showed an enhancement of the un-passivated devices. This development introduces a new potential to employ high-quality perovskite single-crystal-based devices for more advanced optoelectronics.
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Affiliation(s)
- Abdul Kareem Kalathil Soopy
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, United Arab Emirates
| | - Shengzhong Frank Liu
- Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Dalian 116023, China
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Adel Najar
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, United Arab Emirates
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8
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Ye B, Wang B, Gu Y, Guo J, Zhang X, Qian W, Zhang X, Yang G, Gan Z, Liu Y. Visible-ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl 3/p-GaN heterostructure. NANOSCALE ADVANCES 2024; 6:3073-3081. [PMID: 38868825 PMCID: PMC11166122 DOI: 10.1039/d3na01009k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Accepted: 04/17/2024] [Indexed: 06/14/2024]
Abstract
All-inorganic metal halide perovskites (MHPs) have attracted increasing attention because of their high thermal stability and band gap tunability. Among them, CsPbCl3 is considered a promising semiconductor material for visible-ultraviolet dual-band photodetectors because of its excellent photoelectric properties and suitable band gap value. In this work, we fabricated a visible-ultraviolet dual-band photodetector based on a CsPbCl3/p-GaN heterojunction using the spin coating method. The formation of the heterojunction enables the device to exhibit obvious dual-band response behavior at positive and negative bias voltages. At the same time, the dark current of the device can be as low as 2.42 × 10-9 A, and the corresponding detection rate can reach 5.82 × 1010 Jones. In addition, through simulation calculations, it was found that the heterojunction has a type II energy band arrangement, and the heterojunction response band light absorption is significantly enhanced. The type II energy band arrangement will separate electron-hole pairs more effectively, which will help improve device performance. The successful implementation of visible-ultraviolet dual-band photodetectors based on a CsPbCl3/p-GaN heterojunction provides guidance for the application of all-inorganic MHPs in the field of multi-band photodetectors.
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Affiliation(s)
- Bingjie Ye
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Boxiang Wang
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Yan Gu
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Jiarui Guo
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Xiumei Zhang
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Weiying Qian
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Xiangyang Zhang
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Guofeng Yang
- School of Internet of Things Engineering, Jiangnan University Wuxi 214122 China
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University Nanjing 210023 China
| | - Yushen Liu
- Yancheng Polytechnic College Yancheng 224005 China
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9
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Li Z, Luo Y, Chen Z, Liang H, Lu T, Rao X, Ray A, Abdelhady AL, Yang C, Petralanda U, Bettiol A, Breese M, Dang Z, Gao P. Defect Engineering and Emission Tuning of Wide-Bandgap MAPbCl 3 Perovskite. J Phys Chem Lett 2024; 15:5689-5695. [PMID: 38767955 DOI: 10.1021/acs.jpclett.4c00952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Lead-chloride perovskites are promising candidates for optoelectronic applications, such as visible-blind UV photodetection. It remains unclear how the deep defects in this wide-bandgap material impact the carrier recombination dynamics. In this work, we study the defect properties of MAPbCl3 (MA = CH3NH3) based on photoluminescence (PL) measurements. Our investigations show that apart from the intrinsic emission, four sub-bandgap emissions emerge, which are very likely to originate from the radiative recombination of excitons bound to several intrinsic vacancy and interstitial defects. The intensity of various emission features can be tuned by adjusting the type and ratio of precursors used during synthesis. Our study not only provides important insights into the defect property and carrier recombination mechanism in this class of material but also demonstrates efficient strategies for defect passivation and engineering, paving the way for further development of lead-chloride perovskite-based optoelectronic devices.
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Affiliation(s)
- Zihao Li
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Yuqing Luo
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Zelong Chen
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Haidong Liang
- Center for Ion Beam Applications, National University of Singapore, 117542, Singapore
| | - Tongtong Lu
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Xiaobin Rao
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Aniruddha Ray
- Department of Nanochemistry, Italian Institute of Technology, Genova 16163, Italy
| | - Ahmed L Abdelhady
- Department of Chemistry, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates
| | - Chengyuan Yang
- Center for Ion Beam Applications, National University of Singapore, 117542, Singapore
| | - Urko Petralanda
- Department of Physics, University of the Basque Country (UPV/EHU), Apartado 644, Bilbao 48940, Spain
| | - Andrew Bettiol
- Center for Ion Beam Applications, National University of Singapore, 117542, Singapore
| | - Mark Breese
- Center for Ion Beam Applications, National University of Singapore, 117542, Singapore
| | - Zhiya Dang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
| | - Pingqi Gao
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, Guangdong 518107, P.R. China
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10
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Chen XG, Lin L, Huang GY, Chen XM, Li XZ, Zhou YK, Zou Y, Fu T, Li P, Li Z, Sun HB. Optofluidic crystallithography for directed growth of single-crystalline halide perovskites. Nat Commun 2024; 15:3677. [PMID: 38693167 PMCID: PMC11063063 DOI: 10.1038/s41467-024-48110-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Accepted: 04/19/2024] [Indexed: 05/03/2024] Open
Abstract
Crystallization is a fundamental phenomenon which describes how the atomic building blocks such as atoms and molecules are arranged into ordered or quasi-ordered structure and form solid-state materials. While numerous studies have focused on the nucleation behavior, the precise and spatiotemporal control of growth kinetics, which dictates the defect density, the micromorphology, as well as the properties of the grown materials, remains elusive so far. Herein, we propose an optical strategy, termed optofluidic crystallithography (OCL), to solve this fundamental problem. Taking halide perovskites as an example, we use a laser beam to manipulate the molecular motion in the native precursor environment and create inhomogeneous spatial distribution of the molecular species. Harnessing the coordinated effect of laser-controlled local supersaturation and interfacial energy, we precisely steer the ionic reaction at the growth interface and directly print arbitrary single crystals of halide perovskites of high surface quality, crystallinity, and uniformity at a high printing speed of 102 μm s-1. The OCL technique can be potentially extended to the fabrication of single-crystal structures beyond halide perovskites, once crystallization can be triggered under the laser-directed local supersaturation.
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Affiliation(s)
- Xue-Guang Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Haidian, Beijing, 100084, China
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Linhan Lin
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China.
| | - Guan-Yao Huang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Tsinghua University, Beijing, 100084, China
| | - Xiao-Mei Chen
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Xiao-Ze Li
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Yun-Ke Zhou
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Yixuan Zou
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Tairan Fu
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Tsinghua University, Beijing, 100084, China
| | - Peng Li
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China
| | - Zhengcao Li
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Haidian, Beijing, 100084, China.
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing, 100084, China.
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China.
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11
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Sun J, Ding L. A Polarization-Sensitive Photodetector with Patterned CH 3NH 3PbCl 3 Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308583. [PMID: 38032157 DOI: 10.1002/smll.202308583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 11/05/2023] [Indexed: 12/01/2023]
Abstract
Perovskite photodetectors with polarization-sensitive properties have gained significant attention due to their potential applications in fields such as imaging and remote sensing. Most perovskite photodetectors concentrate on iodine (I) or bromine (Br)-based materials, primarily due to their straightforward fabrication techniques. The utilization of chloride (Cl)-based perovskites with wider bandgaps, such as CH3NH3PbCl3, is relatively limited. In this work, polarized perovskite photodetectors are prepared by a patterned spatially confined method with polarization sensitivity and excellent optoelectronic properties. The patterned perovskite photodetectors (PP-PDs) not only exhibit outstanding photoelectric conversion performance but also demonstrate polarization sensitivity. PP-PDs showcase remarkable performance, including on/off ratios of 3.4 × 104, an extremely low dark current of 1.56 × 10-11 A, and a rapid response time of microseconds. The responsivity and detectivity of PP-PDs reach 10.6 A W-1 and 3 × 1012 Jones, respectively, positioning them as among the highest-performing MAPbCl3-based photodetectors reported to date. Furthermore, polarization layered imaging sensing is achieved using stepwise scanning of the device. This work provides innovative ideas for realizing high-performance polarized perovskite photodetectors.
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Affiliation(s)
- Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
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12
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Dai J, Roshan H, De Franco M, Goldoni L, De Boni F, Xi J, Yuan F, Dong H, Wu Z, Di Stasio F, Manna L. Partial Ligand Stripping from CsPbBr 3 Nanocrystals Improves Their Performance in Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11627-11636. [PMID: 38381521 DOI: 10.1021/acsami.3c15201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Halide perovskite nanocrystals (NCs), specifically CsPbBr3, have attracted considerable interest due to their remarkable optical properties for optoelectronic devices. To achieve high-efficiency light-emitting diodes (LEDs) based on CsPbBr3 nanocrystals (NCs), it is crucial to optimize both their photoluminescence quantum yield (PLQY) and carrier transport properties when they are deposited to form films on substrates. While the exchange of native ligands with didodecyl dimethylammonium bromide (DDAB) ligand pairs has been successful in boosting their PLQY, dense DDAB coverage on the surface of NCs should impede carrier transport and limit device efficiency. Following our previous work, here, we use oleyl phosphonic acid (OLPA) as a selective stripping agent to remove a fraction of DDAB from the NC surface and demonstrate that such stripping enhances carrier transport while maintaining a high PLQY. Through systematic optimization of OLPA dosage, we significantly improve the performance of CsPbBr3 LEDs, achieving a maximum external quantum efficiency (EQE) of 15.1% at 516 nm and a maximum brightness of 5931 cd m-2. These findings underscore the potential of controlled ligand stripping to enhance the performance of CsPbBr3 NC-based optoelectronic devices.
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Affiliation(s)
- Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Hossein Roshan
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Manuela De Franco
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
- Università degli Studi di Genova, Via Dodecaneso 31, 16146Genova, Italy
| | - Luca Goldoni
- Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Francesco De Boni
- Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Francesco Di Stasio
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
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13
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Vlk A, Remes Z, Landova L, Ridzonova K, Hlavac R, Fejfar A, Ledinsky M. Spatial Localization of Defects in Halide Perovskites Using Photothermal Deflection Spectroscopy. J Phys Chem Lett 2024; 15:1273-1278. [PMID: 38278141 PMCID: PMC10860124 DOI: 10.1021/acs.jpclett.3c02966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 01/16/2024] [Accepted: 01/23/2024] [Indexed: 01/28/2024]
Abstract
Photothermal deflection spectroscopy (PDS) emerges as a highly sensitive noncontact technique for measuring absorption spectra and serves for studying defect states within semiconductor thin films. In our study, we applied PDS to methylammonium lead bromide single crystals. By analyzing the frequency dependence of the PDS spectra and the phase difference of the signal, we can differentiate between surface and bulk deep defect absorption states. This methodology allowed us to investigate the effects of bismuth doping and light-induced degradation. The identified absorption states are attributed to MA+ vibrational states and structural defects, and their influence on the nonradiative recombination probability is discussed. This distinction significantly enhances our capability to characterize and analyze perovskite materials at a deeper level.
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Affiliation(s)
- Ales Vlk
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Zdenek Remes
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Lucie Landova
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Katarina Ridzonova
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Robert Hlavac
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Antonin Fejfar
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Martin Ledinsky
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
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14
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Guo J, Ye B, Gu Y, Liu Y, Yang X, Xie F, Zhang X, Qian W, Zhang X, Lu N, Yang G. Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA 2PbI 4/GaN Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56014-56021. [PMID: 37994881 DOI: 10.1021/acsami.3c13114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
Two-dimensional (2D) organic-inorganic hybrid perovskites (OIPs) have exhibited ideal prospects for perovskite photodetectors (PDs) owing to their remarkable environmental stability, tunable band gap, and structural diversity. However, most perovskites face the great challenge of a narrow spectral response. Integrating 2D OIPs with a suitable wide band gap semiconductor gives opportunities to broaden the response spectra. Here, a photodetector based on the BA2PbI4/GaN heterostructure with a broadband photoresponse covering from the ultraviolet (UV) to visible band is designed. We demonstrate that the device is capable of detecting in the UV region by p-GaN being integrated with BA2PbI4. The morphology and material optical properties of BA2PbI4 are characterized by transmission electron microscopy (TEM) and photoluminescence (PL). Additionally, the current-voltage (I-V) characteristics and photoresponses of the BA2PbI4/GaN heterojunction photodetector are investigated. The response spectrum of the photodetector is broadened from the visible to UV region, exhibiting good rectifying behavior in the dark conditions and a broadband photoresponse from the UV to the visible region. Additionally, the energy band is used to analyze the current mechanism of the BA2PbI4/GaN heterojunction PD. This study is expected to provide a new insight of optoelectronic devices by integrating 2D OIPs such as BA2PbI4 and wide-band-gap semiconductors such as GaN to broaden the response spectra.
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Affiliation(s)
- Jiarui Guo
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Bingjie Ye
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Yan Gu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Yushen Liu
- Yancheng Polytechnic college, Yancheng 224005, China
| | - Xifeng Yang
- School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China
| | - Feng Xie
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230039, China
| | - Xiumei Zhang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Weiying Qian
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Xiangyang Zhang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Naiyan Lu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
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15
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Zhang Y, Zhao Z, Liu Z, Tang A. The Scale Effects of Organometal Halide Perovskites. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2935. [PMID: 37999290 PMCID: PMC10674384 DOI: 10.3390/nano13222935] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 11/09/2023] [Accepted: 11/10/2023] [Indexed: 11/25/2023]
Abstract
Organometal halide perovskites have achieved great success in solution-processed photovoltaics. The explorations quickly expanded into other optoelectronic applications, including light-emitting diodes, lasers, and photodetectors. An in-depth analysis of the special scale effects is essential to understand the working mechanisms of devices and optimize the materials towards an enhanced performance. Generally speaking, organometal halide perovskites can be classified in two ways. By controlling the morphological dimensionality, 2D perovskite nanoplatelets, 1D perovskite nanowires, and 0D perovskite quantum dots have been studied. Using appropriate organic and inorganic components, low-dimensional organic-inorganic metal halide hybrids with 2D, quasi-2D, 1D, and 0D structures at the molecular level have been developed and studied. This provides opportunities to investigate the scale-dependent properties. Here, we present the progress on the characteristics of scale effects in organometal halide perovskites in these two classifications, with a focus on carrier diffusion, excitonic features, and defect properties.
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Affiliation(s)
- Yibo Zhang
- Key Laboratory of Luminescence and Optical Information, School of Physical Science and Engineering, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
| | - Zhenze Zhao
- School of Chemistry, Food and Pharmacy, University of Reading, Reading RGE 6AH, UK;
| | - Zhe Liu
- Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China;
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, School of Physical Science and Engineering, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
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16
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Cui Q, Liu X, Li N, Zeng H, Chu D, Li H, Song X, Xu Z, Liu Y, Zhu H, Zhao K, Liu SF. A New Metal-Free Molecular Perovskite-Related Single Crystal with Quantum Wire Structure for High-Performance X-Ray Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2308945. [PMID: 37948432 DOI: 10.1002/smll.202308945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Indexed: 11/12/2023]
Abstract
The family of metal-free molecular perovskites, an emerging novel class of eco-friendly semiconductor, welcomes a new member with a unique 1D hexagonal perovskite structure. Lowering dimensionality at molecular level is a facile strategy for crystal structure conversion, optoelectronic property regulation, and device performance optimization. Herein, the study reports the design, synthesis, packing structure, and photophysical properties of the 1D metal-free molecular perovskite-related single crystal, rac-3APD-NH4 I3 (rac-3APD= racemic-3-Aminopiperidinium), that features a quantum wire structure formed by infinite chains of face-sharing NH4 I6 octahedra, enabling strong quantum confinement with strongly self-trapped excited (STE) states to give efficient warm orange emission with a photoluminescence quantum yield (PLQY) as high as ≈41.6%. The study accordingly unveils its photoexcited carrier dynamics: rac-3APD-NH4 I3 relaxes to STE state with a short lifetime of 10 ps but decays to ground state by emitting photons with a relatively longer lifetime of 560 ps. Additionally, strong quantum confinement effect is conducive to charge transport along the octahedral channels that enables the co-planar single-crystal X-ray detectors to achieve a sensitivity as high as 1556 µC Gyair -1 cm-2 . This work demonstrates the first case of photoluminescence mechanism and photophysical dynamics of 1D metal-free perovskite-related semiconductor, as well as the promise for high-performance X-ray detector.
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Affiliation(s)
- Qingyue Cui
- Department of Chemical Physics, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China (USTC), Hefei, 230026, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Xinmei Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Nan Li
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Hanqing Zeng
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Depeng Chu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xin Song
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Zhuo Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Yanping Liu
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Haiming Zhu
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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17
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Orr KWP, Diao J, Lintangpradipto MN, Batey DJ, Iqbal AN, Kahmann S, Frohna K, Dubajic M, Zelewski SJ, Dearle AE, Selby TA, Li P, Doherty TAS, Hofmann S, Bakr OM, Robinson IK, Stranks SD. Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305549. [PMID: 37735999 DOI: 10.1002/adma.202305549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Revised: 09/01/2023] [Indexed: 09/23/2023]
Abstract
In recent years, halide perovskite materials have been used to make high-performance solar cells and light-emitting devices. However, material defects still limit device performance and stability. Here, synchrotron-based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr3 (MA = CH3 NH3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light-induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X-ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.
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Affiliation(s)
- Kieran W P Orr
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Jiecheng Diao
- London Centre for Nanotechnology, University College London, London, WC1E 6BT, UK
| | - Muhammad Naufal Lintangpradipto
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Darren J Batey
- Diamond Light Source, Harwell Science and Innovation Campus, Fermi Ave, Didcot, OX11 0DE, UK
| | - Affan N Iqbal
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Simon Kahmann
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Kyle Frohna
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Milos Dubajic
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - Szymon J Zelewski
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Alice E Dearle
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Thomas A Selby
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - Peng Li
- Diamond Light Source, Harwell Science and Innovation Campus, Fermi Ave, Didcot, OX11 0DE, UK
| | - Tiarnan A S Doherty
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Osman M Bakr
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Ian K Robinson
- London Centre for Nanotechnology, University College London, London, WC1E 6BT, UK
- Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York, 11793, USA
| | - Samuel D Stranks
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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18
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Fan Y, Chen Q, Li Z, Zhu T, Wu J, You S, Zhang S, Luo J, Ji C. Realization of Passive X-Ray Detection with a Low Detection Limit in Dion-Jacobson Halide Hybrid Perovskite. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303814. [PMID: 37415552 DOI: 10.1002/smll.202303814] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2023] [Revised: 05/09/2023] [Indexed: 07/08/2023]
Abstract
Halide hybrid perovskites are a kind of intriguing contenders for X-ray detection, and their low detection limits (LoDs) have played a crucial part in X-ray safety inspection and medical examination. However, there is still a significant challenge in manufacturing perovskite X-ray detectors with low LoDs. Herein, attributed to the bulk photovoltaic effect (BPVE) of a Dion-Jacobson (DJ) type 2D halide hybrid perovskite polar structure (3-methylaminopropylamine)PbBr4 (1), self-powered X-ray detection with low detection limit is successfully realized. Specifically, the crystal-based detector of 1 exhibits a low dark current at zero bias, which reduces the noise current (0.34 pA), leading to a low detection limit (58.3 nGyair s-1 ) which is two orders of magnitude lower than that of under external voltage bias. The combination of BPVE and LoDs of halide hybrid perovskite provides an efficient strategy to achieve passive X-ray detection with low doses.
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Affiliation(s)
- Yipeng Fan
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangxi, 541004, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Qin Chen
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangxi, 541004, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Zhou Li
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangxi, 541004, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Tingting Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Shihai You
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Shuhua Zhang
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangxi, 541004, P. R. China
| | - Junhua Luo
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangxi, 541004, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
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19
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Chen G, Liu X, An J, Wang S, Zhao X, Gu Z, Yuan C, Xu X, Bao J, Hu HS, Li J, Wang X. Nucleation-mediated growth of chiral 3D organic-inorganic perovskite single crystals. Nat Chem 2023; 15:1581-1590. [PMID: 37550390 DOI: 10.1038/s41557-023-01290-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 07/10/2023] [Indexed: 08/09/2023]
Abstract
Although their zero- to two-dimensional counterparts are well known, three-dimensional chiral hybrid organic-inorganic perovskite single crystals have remained difficult because they contain no chiral components and their crystal phases belong to centrosymmetric achiral point groups. Here we report a general approach to grow single-crystalline 3D lead halide perovskites with chiroptical activity. Taking MAPbBr3 (MA, methylammonium) perovskite as a representative example, whereas achiral MAPbBr3 crystallized from precursors in solution by inverse temperature crystallization method, the addition of micro- or nanoparticles as nucleating agents promoted the formation of chiral crystals under a near equilibrium state. Experimental characterization supported by calculations showed that the chirality of the 3D APbX3 (where A is an ammonium ion and X is Cl, Br or mixed Cl-Br or Br-I) perovskites arises from chiral patterns of the A-site cations and their interaction with the [PbX6]4- octahedra in the perovskite structure. The chiral structure obeys the lowest-energy principle and thereby thermodynamically stable. The chiral 3D hybrid organic-inorganic perovskites served in a circularly polarized light photodetector prototype successfully.
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Affiliation(s)
- Gaoyu Chen
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China
| | - Xiaoyu Liu
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China
| | - Jiakun An
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China
| | - Shibin Wang
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing, China
- Institute of Industrial Catalysis, State Key Laboratory Breeding Base of Green-Chemical Synthesis Technology, College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, China
| | - Xiaokun Zhao
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing, China
| | - Zhongzheng Gu
- Jiangsu Key Laboratory of Optoelectronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing, China
| | - Caojin Yuan
- Jiangsu Key Laboratory of Optoelectronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing, China
| | - Xiangxing Xu
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China.
| | - Jianchun Bao
- Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China
| | - Han-Shi Hu
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing, China.
| | - Jun Li
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing, China
| | - Xun Wang
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing, China.
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20
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Su X, Hou X, Zhang Q, Xie Z, Wei Z, Liu L. 3D-Heterojunction Based on Embedded Perovskite Micro-Sized Single Crystals for Fast Photomultiplier Photodetectors with Broad/Narrowband Dual-Mode. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303964. [PMID: 37377121 DOI: 10.1002/adma.202303964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 06/24/2023] [Indexed: 06/29/2023]
Abstract
A fast photomultiplier photodetector with a broad/narrowband dual mode is implemented using a new 3D heterostructure based on embedded perovskite micro-sized single crystals. Because the single-crystal size is smaller than the electrode size, the active layer can be divided into a perovskite microcrystalline part for charge transport and a polymer-embedded part for charge storage. This induces an additional radial interface in the 3D heterojunction structure, and allows a photogenerated built-in electric field in the radial direction, especially when the energy levels between the perovskite and embedding polymer are similar. This type of heterojunction has a small radial capacitance that can effectively reduce carrier quenching and accelerate the carrier response. By controlling the applied bias direction, up to 300-1000% external quantum efficiency (EQE) and microsecond response can be achieved not only in the wide range of ultraviolet to visible light from 320 to 550 nm, but also in the narrow-band response with a full width at half minimum (FWHM) of 20 nm. This shows great potential for applications in integrated multifunctional photodetectors.
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Affiliation(s)
- Xiaojun Su
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xuehua Hou
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Qinglei Zhang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zengqi Xie
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Linlin Liu
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, P. R. China
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21
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Li B, Wang H, Liu A, Liu Y, Pu W, Shen T, Li M, Que M, Tian J, Dai Q, Yun S. Methylammonium Chloride as a Double-Edged Sword for Efficient and Stable Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301061. [PMID: 37104854 DOI: 10.1002/smll.202301061] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Revised: 04/09/2023] [Indexed: 06/19/2023]
Abstract
The additive engineering strategy promotes the efficiency of solution-processed perovskite solar cells (PSCs) over 25%. However, compositional heterogeneity and structural disorders occur in perovskite films with the addition of specific additives, making it imperative to understand the detrimental impact of additives on film quality and device performance. In this work, the double-edged sword effects of the methylammonium chloride (MACl) additive on the properties of methylammonium lead mixed-halide perovskite (MAPbI3-x Clx ) films and PSCs are demonstrated. MAPbI3-x Clx films suffer from undesirable morphology transition during annealing, and its impacts on the film quality including morphology, optical properties, structure, and defect evolution are systematically investigated, as well as the power conversion efficiency (PCE) evolution for related PSCs. The FAX (FA = formamidinium, X = I, Br, and Ac) post-treatment strategy is developed to inhibit the morphology transition and suppress defects by compensating for the loss of the organic components, a champion PCE of 21.49% with an impressive open-circuit voltage of 1.17 V is obtained, and remains over 95% of the initial efficiency after storing over 1200 hours. This study elucidates that understanding the additive-induced detrimental effects in halide perovskites is critical to achieve the efficient and stable PSCs.
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Affiliation(s)
- Bo Li
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
| | - Huayan Wang
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
| | - Aqiang Liu
- Institute of Advanced Materials and Technology, University of Science and Technology, Beijing, 100083, P. R. China
| | - Yang Liu
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
| | - Wei Pu
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
| | - Ting Shen
- Department of Materials Science and Engineering, Clemson University, Clemson, SC, 29634, USA
| | - Mengjie Li
- Huaneng Clean Energy Research Institute, Future SciTech Park, Beijing, 102209, P. R. China
| | - Meidan Que
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
| | - Jianjun Tian
- Institute of Advanced Materials and Technology, University of Science and Technology, Beijing, 100083, P. R. China
| | - Qilin Dai
- Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, MS, 39217, USA
| | - Sining Yun
- College of Materials and Engineering, Xi'an University of Architecture and Technology, Xi'an, Shaanxi, 710055, P. R. China
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22
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Zhang Y, Zhai Y, Zhang H, Wang Z, Zhang Y, Xu R, Ruan S, Zhou J. A High-Performance UVA Photodetector Based on Polycrystalline Perovskite MAPbCl 3/TiO 2 Nanorods Heterojunctions. SENSORS (BASEL, SWITZERLAND) 2023; 23:6726. [PMID: 37571510 PMCID: PMC10422543 DOI: 10.3390/s23156726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/17/2023] [Accepted: 07/25/2023] [Indexed: 08/13/2023]
Abstract
The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl3/TiO2 nanorods heterojunctions has been fabricated to overcome the shortcoming. The structure was composed of horizontal MAPbCl3 polycrystalline and vertically aligned TiO2 nanorods array. Many localized depletion regions at the MAPbCl3/TiO2 interface can reduce the dark current. The TiO2/MAPbCl3 detector shows high performance including a high ratio of light-dark current of about six orders of magnitude, which is much larger than that of the TiO2 detector. This study indicates the potential in the TiO2/MAPbCl3 heterojunction to fabricate high-performance UV detectors.
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Affiliation(s)
- Yupeng Zhang
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China; (Y.Z.); (Y.Z.)
| | - Yannan Zhai
- Aviation University of Air Force, 7855 Renmin Street, Changchun 130012, China; (Y.Z.); (H.Z.); (Z.W.)
| | - Hui Zhang
- Aviation University of Air Force, 7855 Renmin Street, Changchun 130012, China; (Y.Z.); (H.Z.); (Z.W.)
| | - Zhaoxin Wang
- Aviation University of Air Force, 7855 Renmin Street, Changchun 130012, China; (Y.Z.); (H.Z.); (Z.W.)
| | - Yongfeng Zhang
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China; (Y.Z.); (Y.Z.)
| | - Ruiliang Xu
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China;
- Changchun University of Science and Technology Chongqing Research Institute, 618 Liangjiang Road, Chongqing 130022, China
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China; (Y.Z.); (Y.Z.)
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China; (Y.Z.); (Y.Z.)
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23
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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Zhang Z, Kim W, Ko MJ, Li Y. Perovskite single-crystal thin films: preparation, surface engineering, and application. NANO CONVERGENCE 2023; 10:23. [PMID: 37212959 PMCID: PMC10203094 DOI: 10.1186/s40580-023-00373-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Accepted: 05/08/2023] [Indexed: 05/23/2023]
Abstract
Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.
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Affiliation(s)
- Zemin Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China
| | - Wooyeon Kim
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
| | - Min Jae Ko
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea.
| | - Yuelong Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China.
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25
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Lu H, Long R. Spin-Orbit Coupling Notably Retards Non-radiative Electron-Hole Recombination in Methylammonium Lead Triiodide Perovskites. J Phys Chem Lett 2023; 14:2715-2721. [PMID: 36892969 DOI: 10.1021/acs.jpclett.3c00473] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The giant spin-orbit coupling (SOC) of a heavy lead element significantly extends charge carrier lifetimes of lead halide perovskites (LHPs). The physical mechanism remains unclear and requires a quantum dynamics perspective. Taking methylammonium lead iodide (MAPbI3) as a prototypical system and using non-adiabatic molecular dynamics combined with 1/2 electron correction, we show that SOC notably reduces the non-radiative electron-hole (e-h) recombination by decreasing the non-adiabatic coupling (NAC) primarily as a result of SOC decreasing the e-h wave function overlap by reshaping the electron and hole wave functions. Second, SOC causes spin mismatch subject to spin-mixed states, which further decreases NAC. The charge carrier lifetime is about 3-fold longer in the present of SOC relative to the absence of SOC. Our study generates the fundamental understanding of SOC minimizing non-radiative charge and energy losses in LHPs.
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Affiliation(s)
- Haoran Lu
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
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26
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Dirin DN, Vivani A, Zacharias M, Sekh TV, Cherniukh I, Yakunin S, Bertolotti F, Aebli M, Schaller RD, Wieczorek A, Siol S, Cancellieri C, Jeurgens LPH, Masciocchi N, Guagliardi A, Pedesseau L, Even J, Kovalenko MV, Bodnarchuk MI. Intrinsic Formamidinium Tin Iodide Nanocrystals by Suppressing the Sn(IV) Impurities. NANO LETTERS 2023; 23:1914-1923. [PMID: 36852730 PMCID: PMC9999454 DOI: 10.1021/acs.nanolett.2c04927] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 02/16/2023] [Indexed: 06/18/2023]
Abstract
The long search for nontoxic alternatives to lead halide perovskites (LHPs) has shown that some compelling properties of LHPs, such as low effective masses of carriers, can only be attained in their closest Sn(II) and Ge(II) analogues, despite their tendency toward oxidation. Judicious choice of chemistry allowed formamidinium tin iodide (FASnI3) to reach a power conversion efficiency of 14.81% in photovoltaic devices. This progress motivated us to develop a synthesis of colloidal FASnI3 NCs with a concentration of Sn(IV) reduced to an insignificant level and to probe their intrinsic structural and optical properties. Intrinsic FASnI3 NCs exhibit unusually low absorption coefficients of 4 × 103 cm-1 at the first excitonic transition, a 190 meV increase of the band gap as compared to the bulk material, and a lack of excitonic resonances. These features are attributed to a highly disordered lattice, distinct from the bulk FASnI3 as supported by structural characterizations and first-principles calculations.
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Affiliation(s)
- Dmitry N. Dirin
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Anna Vivani
- Dipartimento
di Scienza e Alta Tecnologia & To.Sca.Lab, Università dell’Insubria, 22100 Como, Italy
| | - Marios Zacharias
- Univ
Rennes, INSA Rennes, CNRS, Institut FOTON, Rennes F-35000, France
| | - Taras V. Sekh
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Ihor Cherniukh
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Sergii Yakunin
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Federica Bertolotti
- Dipartimento
di Scienza e Alta Tecnologia & To.Sca.Lab, Università dell’Insubria, 22100 Como, Italy
| | - Marcel Aebli
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Richard D. Schaller
- Center
for Nanoscale Materials, Argonne National
Laboratory, Lemont, Illinois 60439, United
States
- Department
of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Alexander Wieczorek
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Sebastian Siol
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Claudia Cancellieri
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Lars P. H. Jeurgens
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Norberto Masciocchi
- Dipartimento
di Scienza e Alta Tecnologia & To.Sca.Lab, Università dell’Insubria, 22100 Como, Italy
| | - Antonietta Guagliardi
- Istituto
di Cristallografia & To.Sca.Lab, Consiglio
Nazionale delle Ricerche, 22100 Como, Italy
| | - Laurent Pedesseau
- Univ
Rennes, INSA Rennes, CNRS, Institut FOTON, Rennes F-35000, France
| | - Jacky Even
- Univ
Rennes, INSA Rennes, CNRS, Institut FOTON, Rennes F-35000, France
| | - Maksym V. Kovalenko
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Maryna I. Bodnarchuk
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland
- Empa−Swiss
Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
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27
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Improving morphology and optoelectronic properties of ultra-wide bandgap perovskite via Cs tuning for clear solar cell and UV detection applications. Sci Rep 2023; 13:2965. [PMID: 36806248 PMCID: PMC9941583 DOI: 10.1038/s41598-023-29409-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 02/03/2023] [Indexed: 02/22/2023] Open
Abstract
With growing population, vertical spaces from skyscrapers are vast. Semi-transparent solar cells enable an effective pathway for vertical energy harvesting. With composition tunability, perovskite materials can be designed with different transparencies and colors. In this work, an ultra-high bandgap layered triple cation perovskite system was developed for the first time to meet the demand of clear optoelectronic applications; low dimensional triple cation perovskite thin films were fabricated using perovskite with the formula (PEA)2(CsxMA0.61-xFA0.39)39(Pb)40(Cl0.88-0.32xBr0.12+0.32x)121, 0 ≤ x ≤ 0.02 with DMSO as the appropriate solvent. The absorption edge of the material is around 410-430 nm, achieving great transparency to visible light. The structural, optical, and photovoltaic performances of the clear perovskite materials are explored with the variation of Cs contents via CsBr. The relation between thickness, transparency, and optoelectronic properties of the clear perovskite materials along with other physical properties were investigated. The highest photovoltaic conversion efficiency (PCE) of clear perovskite solar cells with 1.5% Cs was achieved to be 0.69% under xenon lamp irradiation at 100 mW/cm2 (1.5 mW/cm2 of UVA within 100 mW/cm2) and 5.24% under 365 nm UV irradiation at 2.4 mW/cm2. Photoresponsivity, external quantum efficiency (EQE), and detectivity were also determined for photodetector applications.
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28
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Chen S, Yin H, Liu P, Wang Y, Zhao H. Stabilization and Performance Enhancement Strategies for Halide Perovskite Photocatalysts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203836. [PMID: 35900361 DOI: 10.1002/adma.202203836] [Citation(s) in RCA: 26] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 07/15/2022] [Indexed: 06/15/2023]
Abstract
Solar-energy-powered photocatalytic fuel production and chemical synthesis are widely recognized as viable technological solutions for a sustainable energy future. However, the requirement of high-performance photocatalysts is a major bottleneck. Halide perovskites, a category of diversified semiconductor materials with suitable energy-band-enabled high-light-utilization efficiencies, exceptionally long charge-carrier-diffusion-length-facilitated charge transport, and readily tailorable compositional, structural, and morphological properties, have emerged as a new class of photocatalysts for efficient hydrogen evolution, CO2 reduction, and various organic synthesis reactions. Despite the noticeable progress, the development of high-performance halide perovskite photocatalysts (HPPs) is still hindered by several key challenges: the strong ionic nature and high hydrolysis tendency induce instability and an unsatisfactory activity due to the need for a coactive component to realize redox processes. Herein, the recently developed advanced strategies to enhance the stability and photocatalytic activity of HPPs are comprehensively reviewed. The widely applicable stability enhancement strategies are first articulated, and the activity improvement strategies for fuel production and chemical synthesis are then explored. Finally, the challenges and future perspectives associated with the application of HPPs in efficient production of fuels and value-added chemicals are presented, indicating the irreplaceable role of the HPPs in the field of photocatalysis.
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Affiliation(s)
- Shan Chen
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230039, P. R. China
| | - Huajie Yin
- Institute of Solid State Physics, Hefei Institutes of Physical ScienceChinese Academy of Sciences, 230031, Hefei, P. R. China
| | - Porun Liu
- Centre for Catalysis and Clean Energy, Gold Cost Campus, Griffith University, Queensland, 4222, Australia
| | - Yun Wang
- Centre for Catalysis and Clean Energy, Gold Cost Campus, Griffith University, Queensland, 4222, Australia
| | - Huijun Zhao
- Centre for Catalysis and Clean Energy, Gold Cost Campus, Griffith University, Queensland, 4222, Australia
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29
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Soultati A, Tountas M, Armadorou KK, Yusoff ARBM, Vasilopoulou M, Nazeeruddin MK. Synthetic approaches for perovskite thin films and single-crystals. ENERGY ADVANCES 2023; 2:1075-1115. [DOI: 10.1039/d3ya00098b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
Halide perovskites are compelling candidates for the next generation of photovoltaic technologies owing to an unprecedented increase in power conversion efficiency and their low cost, facile fabrication and outstanding semiconductor properties.
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Affiliation(s)
- Anastasia Soultati
- Institute of Nanoscience and Nanotechnology, National Centre for Scientific Research Demokritos, 15341 Agia Paraskevi, Attica, Greece
| | - Marinos Tountas
- Department of Electrical Engineering, Hellenic Mediterranean University, Estavromenos, 71410 Heraklion Crete, Greece
| | - Konstantina K. Armadorou
- Institute of Nanoscience and Nanotechnology, National Centre for Scientific Research Demokritos, 15341 Agia Paraskevi, Attica, Greece
| | - Abd. Rashid bin Mohd Yusoff
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of Korea
| | - Maria Vasilopoulou
- Institute of Nanoscience and Nanotechnology, National Centre for Scientific Research Demokritos, 15341 Agia Paraskevi, Attica, Greece
| | - Mohammad Khaja Nazeeruddin
- Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de l’Industrie 17, CH-1951 Sion, Switzerland
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30
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Wei X, Zhang P, Xu T, Zhou H, Bai Y, Chen Q. Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon. Chem Soc Rev 2022; 51:10016-10063. [PMID: 36398768 DOI: 10.1039/d2cs00110a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed in conventional PVs, it has achieved limited success in the new-generation PV materials, particularly in halide perovskites, owing to their soft lattice nature and self-compensation by intrinsic defects. In this review, we summarize the evolution of the theoretical understanding and strategies of electronic doping from Si-based photovoltaics to thin-film technologies, e.g., GaAs, CdTe and Cu(In,Ga)Se2, and also cover the emerging PVs including halide perovskites and organic solar cells. We focus on the chemical approaches to electronic doping, emphasizing various chemical interactions/bonding throughout materials synthesis/modification to device fabrication/operation. Furthermore, we propose new classifications and models of electronic doping based on the physical and chemical properties of dopants, in the context of solid-state chemistry, which inspires further development of optoelectronics based on perovskites and other hybrid materials. Finally, we outline the effects of electronic doping in semiconducting materials and highlight the challenges that need to be overcome for reliable and controllable doping.
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Affiliation(s)
- Xueyuan Wei
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
| | - Pengxiang Zhang
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
| | - Tailai Xu
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
| | - Huanping Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yang Bai
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
| | - Qi Chen
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
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31
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Yun Y, Han GS, Park GN, Kim J, Park J, Vidyasagar D, Jung J, Choi WC, Choi YJ, Heo K, Kang J, Park JS, Jung HS, Lee S. A Wide Bandgap Halide Perovskite Based Self-Powered Blue Photodetector with 84.9% of External Quantum Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206932. [PMID: 36210726 DOI: 10.1002/adma.202206932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 10/04/2022] [Indexed: 06/16/2023]
Abstract
A self-powered, color-filter-free blue photodetector (PD) based on halide perovskites is reported. A high external quantum efficiency (EQE) of 84.9%, which is the highest reported EQE in blue PDs, is achieved by engineering the A-site monovalent cations of wide-bandgap perovskites. The optimized composition of formamidinium (FA)/methylammonium (MA) increases the heat of formation, yielding a uniform and smooth film. The incorporation of Cs+ ions into the FA/MA composition suppresses the trap density and increases charge-carrier mobility, yielding the highest average EQE of 77.4%, responsivity of 0.280 A W-1 , and detectivity of 5.08 × 1012 Jones under blue light. Furthermore, Cs+ improves durability under repetitive operations and ambient atmosphere. The proposed device exhibits peak responsivity of 0.307 A W-1 , which is higher than that of the commercial InGaN-based blue PD (0.289 A W-1 ). This study will promote the development of next-generation image sensors with vertically stacked perovskite PDs.
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Affiliation(s)
- Yeonghun Yun
- School of Materials Science and Engineering, Kyungpook National University (KNU), Daegu, 41566, Republic of Korea
| | - Gill Sang Han
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Gyu Na Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jinhong Park
- Department of Nanotechnology and Advanced Materials Engineering, Hybrid Materials Research Center (HMC), Sejong University (SJU), Seoul, 05006, Republic of Korea
| | - Devthade Vidyasagar
- School of Materials Science and Engineering, Kyungpook National University (KNU), Daegu, 41566, Republic of Korea
| | - Jina Jung
- School of Materials Science and Engineering, Kyungpook National University (KNU), Daegu, 41566, Republic of Korea
| | - Won Chang Choi
- School of Materials Science and Engineering, Kyungpook National University (KNU), Daegu, 41566, Republic of Korea
| | - Young Jin Choi
- Department of Nanotechnology and Advanced Materials Engineering, Hybrid Materials Research Center (HMC), Sejong University (SJU), Seoul, 05006, Republic of Korea
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Hybrid Materials Research Center (HMC), Sejong University (SJU), Seoul, 05006, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sangwook Lee
- School of Materials Science and Engineering, Kyungpook National University (KNU), Daegu, 41566, Republic of Korea
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32
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Gao Q, Qi J, Chen K, Xia M, Hu Y, Mei A, Han H. Halide Perovskite Crystallization Processes and Methods in Nanocrystals, Single Crystals, and Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200720. [PMID: 35385587 DOI: 10.1002/adma.202200720] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 03/27/2022] [Indexed: 06/14/2023]
Abstract
Halide perovskite semiconductors with extraordinary optoelectronic properties have been fascinatedly studied. Halide perovskite nanocrystals, single crystals, and thin films have been prepared for various fields, such as light emission, light detection, and light harvesting. High-performance devices rely on high crystal quality determined by the nucleation and crystal growth process. Here, the fundamental understanding of the crystallization process driven by supersaturation of the solution is discussed and the methods for halide perovskite crystals are summarized. Supersaturation determines the proportion and the average Gibbs free energy changes for surface and volume molecular units involved in the spontaneous aggregation, which could be stable in the solution and induce homogeneous nucleation only when the solution exceeds a required minimum critical concentration (Cmin ). Crystal growth and heterogeneous nucleation are thermodynamically easier than homogeneous nucleation due to the existent surfaces. Nanocrystals are mainly prepared via the nucleation-dominated process by rapidly increasing the concentration over Cmin , single crystals are mainly prepared via the growth-dominated process by keeping the concentration between solubility and Cmin , while thin films are mainly prepared by compromising the nucleation and growth processes to ensure compactness and grain sizes. Typical strategies for preparing these three forms of halide perovskites are also reviewed.
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Affiliation(s)
- Qiaojiao Gao
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jianhang Qi
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Kai Chen
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Minghao Xia
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yue Hu
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Anyi Mei
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Hongwei Han
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
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33
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Liu S, Li H, Lu H, Wang Y, Wen X, Deng S, Li MY, Liu S, Wang C, Li X. High Performance 0D ZnO Quantum Dot/2D (PEA) 2PbI 4 Nanosheet Hybrid Photodetectors Fabricated via a Facile Antisolvent Method. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4217. [PMID: 36500840 PMCID: PMC9738548 DOI: 10.3390/nano12234217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 11/23/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) organic-inorganic perovskites have great potential for the fabrication of next-generation photodetectors owing to their outstanding optoelectronic features, but their utilization has encountered a bottleneck in anisotropic carrier transportation induced by the unfavorable continuity of the thin films. We propose a facile approach for the fabrication of 0D ZnO quantum dot (QD)/2D (PEA)2PbI4 nanosheet hybrid photodetectors under the atmospheric conditions associated with the ZnO QD chloroform antisolvent. Profiting from the antisolvent, the uniform morphology of the perovskite thin films is obtained owing to the significantly accelerated nucleation site formation and grain growth rates, and ZnO QDs homogeneously decorate the surface of (PEA)2PbI4 nanosheets, which spontaneously passivate the defects on perovskites and enhance the carrier separation by the well-matched band structure. By varying the ZnO QD concentration, the Ion/Ioff ratio of the photodetectors radically elevates from 78.3 to 1040, and a 12-fold increase in the normalized detectivity is simultaneously observed. In addition, the agglomeration of perovskite grains is governed by the annealing temperature, and the photodetector fabricated at a relatively low temperature of 120 °C exhibits excellent stability after a 50-cycle test in the air condition without any encapsulation.
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Affiliation(s)
- Shijie Liu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Hao Li
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Haifei Lu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yanran Wang
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaoyan Wen
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Shuo Deng
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Sisi Liu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Cong Wang
- School of Electronics and Information Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xiao Li
- Hisense Visual Technology Co., Ltd., Qingdao 266555, China
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34
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Bhosale MK, Kazi AI, Pawar KK, Shingate RS, Kadam AD, Patil NJ, Sheikh AD. Eco-friendly MA 3Bi 2I 9perovskite thin films based ammonia sensor. NANOTECHNOLOGY 2022; 34:065501. [PMID: 36347030 DOI: 10.1088/1361-6528/aca0f7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Organic-inorganic perovskite halides (OIPH) have emerged as a wonder material with growing interest in sensors detecting various toxic gases. However, lead toxicity represents a potential obstacle, and therefore finding lead-free cost-effective compatible materials for gas sensing applications is essential. In this work, methylammonium bismuth iodide i.e. (CH3NH3)3Bi2I9(MABI) perovskite thin films-based ammonia (NH3) sensor was synthesized using an antisolvent-assisted one-step spin coating method. The MABI sensor shows a linear relationship between the responsivity and concentration of NH3with excellent reversibility, high gas responsivity, and humidity stability. The MABI thin-film sensor exhibits a maximum gas response of 24%, a short response/recovery time i.e. 0.14 s /8.15 s and good reversibility at 6 ppm of NH3. It was observed that MABI thin films based sensors have excellent ambient stability over a couple of months. This work reveals that it is feasible to design high-performance gas sensors based on environmentally-friendly Bi-based OIPH materials.
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Affiliation(s)
- M K Bhosale
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - A I Kazi
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - K K Pawar
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - R S Shingate
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - A D Kadam
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - N J Patil
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
| | - Arif D Sheikh
- School of Nanoscience and Technology, Shivaji University, Kolhapur, 416004, Maharashtra, India
- Centre for Nanoscience and Nanotechnology, Amity University Maharashtra, Somathne, Mumbai, 410206, Maharashtra, India
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35
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Magdaleno AJ, Frisenda R, Prins F, Castellanos-Gomez A. Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing. NANOSCALE 2022; 14:14057-14063. [PMID: 36129322 PMCID: PMC9536486 DOI: 10.1039/d2nr02963d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2022] [Accepted: 08/31/2022] [Indexed: 06/15/2023]
Abstract
Paper offers a low-cost and widely available substrate for electronics. It possesses alternative characteristics to silicon, as it shows low density and high flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-prepare perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green region, by increasing the bromide content on MAPb(I1-xBrx)3 perovskite alloys. The devices show a fast and efficient response. The best performances are observed for pure I and Br perovskite compositions, with a maximum responsivity of ∼400 mA W-1 on the MAPbBr3 device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offers for the development of low-cost, biodegradable and easy-to-prepare devices.
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Affiliation(s)
- Alvaro J Magdaleno
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Riccardo Frisenda
- Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain.
- Department of Physics, Sapienza University of Rome, 00185 Rome, Italy
| | - Ferry Prins
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
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36
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Xu S, Tang J, Qu J, Xia P, Zhu K, Shao H, Wang C. Lead-Free Copper-Based Perovskite Nanonets for Deep Ultraviolet Photodetectors with High Stability and Better Performance. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3264. [PMID: 36234392 PMCID: PMC9565817 DOI: 10.3390/nano12193264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Revised: 09/15/2022] [Accepted: 09/17/2022] [Indexed: 06/16/2023]
Abstract
Considering practical application and commercialization, the research of non-toxic and stable halide perovskite and its application in the field of photoelectric detection have received great attention. However, there are relatively few studies on deep ultraviolet photodetectors, and the perovskite films prepared by traditional spin-coating method have disadvantages such as uneven grain size and irregular agglomeration, which limit their device performance. Herein, uniform and ordered Cs3Cu2I5 nanonet arrays are fabricated based on monolayer colloidal crystal (MCC) templates prepared with 1 μm polystyrene (PS) spheres, which enhance light-harvesting ability. Furthermore, the performance of the lateral photodetector (PD) is significantly enhanced when using Cs3Cu2I5 nanonet compared to the pure Cs3Cu2I5 film. Under deep ultraviolet light, the Cs3Cu2I5 nanonet PD exhibits a high light responsivity of 1.66 AW-1 and a high detection up to 2.48 × 1012 Jones. Meanwhile, the unencapsulated PD has almost no response to light above 330 nm and shows remarkable stability. The above results prove that Cs3Cu2I5 nanonet can be a great potential light-absorbing layer for solar-blind deep ultraviolet PD, which can be used as light absorption layer of UV solar cell.
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Affiliation(s)
- Shuhong Xu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Jieqin Tang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Junfeng Qu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Pengfei Xia
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Kai Zhu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Haibao Shao
- School of Electronics & Information, Nantong University, Nantong 226019, China
| | - Chunlei Wang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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37
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Liu Y, Long R, Fang WH. Great Influence of Organic Cation Motion on Charge Carrier Dynamics in Metal Halide Perovskite Unraveled by Unsupervised Machine Learning. J Phys Chem Lett 2022; 13:8537-8545. [PMID: 36067083 DOI: 10.1021/acs.jpclett.2c02515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Unsupervised machine learning combined with time-dependent density functional theory reveals the significant influence of organic cation on the charge carrier lifetime of FAPbI3 (FA = HC(NH2)2+) by analyzing their mutual information (MI) between the geometric features and the nonadiabatic coupling (NAC) and bandgap. Analysis of MI values demonstrates that the NAC and bandgap are dominated by the orientation and shape of the inorganic octahedron because iodine and lead atoms are composed of the band edge states. Counterintuitively, the correlated motion promotes the contribution of the FA cation to the NAC; in particular, one type of FA rotation even supersedes the influence of the velocities of the lead and iodine atoms due to the enhanced hydrogen bond interaction. Our study demonstrates the importance of the correlated motion on the excited-state lifetimes of FAPbI3, which provides a guidance for optimizing the optoelectronic properties of metal halide perovskites.
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Affiliation(s)
- Yulong Liu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Wei-Hai Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
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38
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Yan J, Gao F, Gong W, Tian Y, Li L. Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector. RSC Adv 2022; 12:25881-25889. [PMID: 36199597 PMCID: PMC9465635 DOI: 10.1039/d2ra04820e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 09/02/2022] [Indexed: 01/09/2023] Open
Abstract
Two-dimensional (2D) layered organic-inorganic hybrid perovskites have attracted wide attention in high-performance optoelectronic applications due to their good stability and excellent optoelectronic properties. Here, a high-performance self-powered photodetector is realized based on an asymmetrical metal-semiconductor-metal (MSM) device structure (Pt-(PEA)2PbI4 SC-Ag), which introduces a strong built-in electric field by regulating interface Schottky barriers. Benefitting from excellent built-in electrical potential, the photodetector shows attractive photovoltaic properties without any power supply, including high photo-responsivity (114.07 mA W-1), fast response time (1.2 μs/582 μs) and high detectivity (4.56 × 1012 Jones). Furthermore, it exhibits high-fidelity imaging capability at zero bias voltage. In addition, the photodetectors show excellent stability by maintaining 99.4% of the initial responsivity in air after 84 days. This work enables a significant advance in perovskite SC photodetectors for developing stable and high-performance devices.
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Affiliation(s)
- Jun Yan
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University Harbin 150025 China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University Harbin 150025 China
| | - Weiqiang Gong
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University Harbin 150025 China
| | - Yongzhi Tian
- School of Physics and Engineering, Zhengzhou University Zhengzhou 450001 China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University Harbin 150025 China
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39
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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Tan R, Dryzhakov B, Higgins K, Charest J, Dancoes Z, Kandlakunta P, Cao LR, Ahmadi M, Hu B, Lukosi E. Lithium Chloride-Substituted Methylammonium Lead Tribromide Perovskites for Dual γ/Neutron Sensing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34571-34582. [PMID: 35867970 DOI: 10.1021/acsami.2c05024] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Dual γ/neutron radiation sensors are a critical component of the nuclear security mission to prevent the proliferation of a special nuclear material (SNM). While high-performing semiconductors such as high purity germanium (HPGe) and CdZnTe (CZT) already exist in the nuclear security enterprise, their high cost and/or logistical burdens make widespread deployment difficult to achieve. Metal lead halide perovskites (MHPs) have attracted interest in recent years to address this challenge. In particular, methylammonium lead tribromide (CH3NH3PbBr3, MAPbBr3, or MAPB) has been widely evaluated for its radiation sensing capabilities. While previous studies have demonstrated low-energy X-ray and α particle sensing of MAPB-based detectors and several studies discuss the potential for γ ray sensing, neutron sensing of this material has been rarely explored. Here, we explore the incorporation of lithium in the form of LiCl into the MAPB structure to add thermal neutron sensitivity. Characterizations of the lithium-doped MAPB crystals demonstrate that quality growths are achievable with single crystals that exhibit high crystallinity, no phase change, and high macroscopic bulk quality. Finally, we report on the first demonstrated γ ray and thermal neutron sensing based on lithium-doped MAPB single crystals, which is a significant milestone in the development of 3D dual γ/neutron MHP sensors.
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Affiliation(s)
- Ryan Tan
- Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Bogdan Dryzhakov
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Kate Higgins
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jessica Charest
- Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Zachary Dancoes
- Nuclear Engineering, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Praneeth Kandlakunta
- Nuclear Engineering, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Lei R Cao
- Nuclear Engineering, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Mahshid Ahmadi
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Bin Hu
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Eric Lukosi
- Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Institute for Advanced Materials & Manufacturing, University of Tennessee, Knoxville, Tennessee 37996, United States
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41
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Liu C, Chen H, Lin P, Hu H, Meng Q, Xu L, Wang P, Wu X, Cui C. Optimized photoelectric characteristics of MAPbCl 3and MAPbBr 3composite perovskite single crystal heterojunction photodetector. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:405703. [PMID: 35896095 DOI: 10.1088/1361-648x/ac84bc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 07/27/2022] [Indexed: 06/15/2023]
Abstract
MAPbBr3single crystal (SC) thin layer was successfully grown on MAPbCl3SC substrate to form perovskite SC heterojunction. Planar structure electrodes are deposited by thermal evaporation on the surfaces of MAPbCl3, MAPbBr3, and SCs heterojunction, respectively to evaluate their photoelectric performance. The SC heterojunction device exhibits excellent unidirectional conductivity in the voltage-current curves. Meanwhile, the current-time curves prove that SC heterojunction devices can effectively utilize the advantages of MAPbCl3and MAPbBr3, possessing relatively low dark current (∼300 nA), which is comparable to the dark current of MAPbCl3, but very high photocurrent (∼3500 nA), which is equivalent to the photocurrent of MAPbBr3. Rather than the photocurrent overshot and decay occurring at the exposure of light illumination in the MAPbBr3device, the photocurrent is extremely stable without overshot and decay in the SC heterojunction device. The light-to-dark ratio of the SC heterojunction device is twice that of MAPbCl3device and three times that of MAPbBr3device. Furthermore, the detectivity of the heterojunction device reaches as high as∼7×1011 Jones, an order of magnitude higher than MAPbCl3and MAPbBr3. The excellent characteristics of SC heterojunction further expand the practical application prospect of perovskite materials.
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Affiliation(s)
- Chao Liu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Hang Chen
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Ping Lin
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Haihua Hu
- Zhejiang University City College, Hangzhou 310018, People's Republic of China
| | - Qingyu Meng
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Lingbo Xu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Peng Wang
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Xiaoping Wu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Can Cui
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
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42
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Dintakurti SSH, Walker D, Bird TA, Fang Y, White T, Hanna JV. A powder XRD, solid state NMR and calorimetric study of the phase evolution in mechanochemically synthesized dual cation (Cs x(CH 3NH 3) 1-x)PbX 3 lead halide perovskite systems. Phys Chem Chem Phys 2022; 24:18004-18021. [PMID: 35861055 DOI: 10.1039/d2cp02131e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Methylammonium (MA+) lead halide perovskites (MAPbX3) have been widely investigated for photovoltaic applications, with the addition of Cs improving structural and thermal stability. This study reports the complete A site miscibility of Cs+ and MA+ cations in the lead chloride and lead bromide perovskites with nominal stoichiometric formulae (CsxMA1-x)Pb(Cl/Br)3 (x = 0, 0.13, 0.25, 0.37, 0.50, 0.63, 0.75, 0.87, 1). These suites of materials were synthesized mechanochemically as a simple, cost-effective synthesis technique to produce highly ordered, single phase particles. In contrast to previous studies using conventional synthetic routes that have reported significant solubility gaps, this solvent-free approach induces complete miscibility within the dual cation Cs+/MA+ system, with the resultant structures exhibiting high short-range and long-range atomic ordering across the entire compositional range that are devoid of solvent inclusions and disorder. The subtle structural evolution from cubic to orthorhombic symmetry reflecting PbX6 octahedral tilting was studied using complementary high resolution TEM, powder XRD, multinuclear 133Cs/207Pb/1H MAS NMR, DSC, XPS and UV/vis approaches. The phase purity and exceptional structural order were reflected in the very high resolution HRTEM images presented from particles with crystallite sizes in the ∼80-170 nm range, and the stability and long lifetimes of the Br series (10-20 min) and the Cl series (∼30 s-1 min) under the 200 kV/146 μA e- beam. Rietveld refinements associated with the room temperature PXRD study demonstrated that each system converged towards single phase compositions that were very close to the intended target stoichiometries, thus indicating the complete miscibility within these dual cation Cs+/MA+ solid solution systems. The multinuclear MAS NMR data showed a distinct sensitivity to the changing solid solution compositions across the MAPbX3-CsPbX3 partition. In particular, the 133Cs shifts demonstrated a sensitivity to the cubic-orthorhombic phase transition while the 133Cs T1s exhibited a pronounced sensitivity to the variable Cs+ cation mobility across the compositional range. Variable temperature PXRD studies facilitated the production of phase diagrams mapping the Cs+/MA+ compositional space for the (CsxMA1-x)PbCl3 and (CsxMA1-x)PbBr3 solid solution series, while Tauc plots of the UV/vis data exhibited reducing bandgaps with increasing MA+ incorporation through ranges of cubic phases where octahedral tilting was absent.
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Affiliation(s)
- Sai S H Dintakurti
- Department of Physics, University of Warwick, Coventry, West Midlands, CV4 7AL, UK. .,Interdisciplinary Graduate School, Nanyang Technological University, Singapore 639798, Singapore
| | - David Walker
- Department of Physics, University of Warwick, Coventry, West Midlands, CV4 7AL, UK.
| | - Tobias A Bird
- Department of Chemistry, University of Warwick, Coventry, West Midlands, CV4 7AL, UK
| | - Yanan Fang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Tim White
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - John V Hanna
- Department of Physics, University of Warwick, Coventry, West Midlands, CV4 7AL, UK. .,School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
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Liu F, Cai X, Liu K, Rafique S, Behrouznejad F, Bu K, Lü X, Wang J, Wu S, Wang X, Pan Y, Li X, Cai Y, Zhu J, Qiu Z, Yu A, Shen H, Wang J, Zhan Y. New Lead-free Organic-Inorganic Hybrid Semiconductor Single Crystals for a UV-Vis-NIR Broadband Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33850-33860. [PMID: 35852172 DOI: 10.1021/acsami.2c08116] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)-halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet-visible-near infrared (UV-vis-NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic-inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV-vis-NIR broadband photodetectors.
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Affiliation(s)
- Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xia Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Saqib Rafique
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Fatemeh Behrouznejad
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Yiyi Pan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Yichen Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Junqiang Zhu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Zhijun Qiu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
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44
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Das S, Samanta A. On direct synthesis of high quality APbX 3 (A = Cs +, MA + and FA +; X = Cl -, Br - and I -) nanocrystals following a generic approach. NANOSCALE 2022; 14:9349-9358. [PMID: 35726794 DOI: 10.1039/d2nr01305c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Direct synthesis of APbX3 [A = Cs+, methylammonium (MA+) or formamidinium (FA+) and X = Cl-, Br- or I-] perovskite nanocrystals (NCs) following a generic approach is a challenging task even today. Motivated by our recent success in obtaining directly high-quality red/NIR-emitting APbI3 NCs employing 1,3-diiodo-5,5-dimethylhydantoin (DIDMH) as an iodide precursor, we explore here whether violet/green-emitting APbCl3 and APbBr3 NCs can also be obtained using the chloro- and bromo-analog of DIDMH keeping in mind that a positive outcome will provide the generic protocol for direct synthesis of all APbX3 NCs using similar halide precursors. It is shown that green-emitting APbBr3 NCs with near-unity PLQY and violet-emitting CsPbCl3 NCs with an impressive PLQY of ∼70%, mixed-halide NCs, CsPb(Cl/Br)3 and CsPb(Br/I)3, emitting in the blue and yellow-orange region with PLQYs of 87-95% and 68-98%, respectively can indeed be obtained employing the bromo- and chloro-analog of DIDMH. These NCs exhibit remarkable stability under different conditions including the polar environment. Femtosecond pump-probe studies show no ultrafast carrier trapping in these systems. The key elements of the halide precursors that facilitated the synthesis and the factors contributing to the excellent characteristics of the NCs are determined by careful analysis of the data. The results are of great significance because a direct method of obtaining highly luminescent and stable APbX3 NCs (except violet-emitting hybrid NCs) is eventually identified and the work provides valuable insight into the selection of appropriate halide precursors for the development of superior systems.
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Affiliation(s)
- Somnath Das
- School of Chemistry, University of Hyderabad, Hyderabad-500 046, India.
| | - Anunay Samanta
- School of Chemistry, University of Hyderabad, Hyderabad-500 046, India.
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45
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Cho Y, Jung HR, Jo W. Halide perovskite single crystals: growth, characterization, and stability for optoelectronic applications. NANOSCALE 2022; 14:9248-9277. [PMID: 35758131 DOI: 10.1039/d2nr00513a] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently, metal halide perovskite materials have received significant attention as promising candidates for optoelectronic applications with tremendous achievements, owing to their outstanding optoelectronic properties and facile solution-processed fabrication. However, the existence of a large number of grain boundaries in perovskite polycrystalline thin films causes ion migration, surface defects, and instability, which are detrimental to device applications. Compared with their polycrystalline counterparts, perovskite single crystals have been explored to realize stable and excellent properties such as a long diffusion length and low trap density. The development of growth techniques and physicochemical characterizations led to the widespread implementation of perovskite single-crystal structures in optoelectronic applications. In this review, recent progress in the growth techniques of perovskite single crystals, including advanced crystallization methods, is summarized. Additionally, their optoelectronic characterizations are elucidated along with a detailed analysis of their optical properties, carrier transport mechanisms, defect densities, surface morphologies, and stability issues. Furthermore, the promising applications of perovskite single crystals in solar cells, photodetectors, light-emitting diodes, lasers, and flexible devices are discussed. The development of suitable growth and characterization techniques contributes to the fundamental investigation of these materials and aids in the construction of highly efficient optoelectronic devices based on halide perovskite single crystals.
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Affiliation(s)
- Yunae Cho
- New and Renewable Energy Research Centre, Ewha Womans University, Seoul, Republic of Korea.
| | - Hye Ri Jung
- Department of Physics, Ewha Womans University, Seoul, Republic of Korea
| | - William Jo
- New and Renewable Energy Research Centre, Ewha Womans University, Seoul, Republic of Korea.
- Department of Physics, Ewha Womans University, Seoul, Republic of Korea
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Li Z, Li Z, Zuo C, Fang X. Application of Nanostructured TiO 2 in UV Photodetectors: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109083. [PMID: 35061927 DOI: 10.1002/adma.202109083] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
As a wide-bandgap semiconductor material, titanium dioxide (TiO2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2 -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2 -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
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Affiliation(s)
- Ziliang Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Chaolei Zuo
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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Wang Z, Zhang X, Ye H, Zhu T, Luo J. A Quasi‐Two‐Dimensional Trilayered CsPbBr
3
‐based Dion‐Jacobson Hybrid Perovskite toward High‐Performance Photodetection. Chemistry 2022; 28:e202200849. [DOI: 10.1002/chem.202200849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Indexed: 11/11/2022]
Affiliation(s)
- Ziyang Wang
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 450002 P. R. China
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 450002 P. R. China
| | - Huang Ye
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 450002 P. R. China
| | - Tingting Zhu
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 450002 P. R. China
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 450002 P. R. China
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 P. R. China
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Lee JW, Naqvi FH, Ko JH, Kim TH, Ahn CW. Acoustic Anomalies and the Critical Slowing-Down Behavior of MAPbCl3 Single Crystals Studied by Brillouin Light Scattering. MATERIALS 2022; 15:ma15103692. [PMID: 35629720 PMCID: PMC9145713 DOI: 10.3390/ma15103692] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 05/18/2022] [Accepted: 05/19/2022] [Indexed: 12/23/2022]
Abstract
Inelastic light scattering spectra of organic–inorganic halide perovskite MAPbCl3 single crystals were investigated by using Brillouin spectroscopy. Sound velocities and acoustic absorption coefficients of longitudinal and transverse acoustic modes propagating along the cubic [100] direction were determined in a wide temperature range. The sound velocities exhibited softening upon cooling in the cubic phase, which was accompanied by the increasing acoustic damping. The obtained relaxation time showed a critical slowing-down behavior, revealing the order–disorder nature of the phase transition, which is consistent with the growth of strong central peaks upon cooling toward the phase transition point. The temperature dependences of the two elastic constants C11 and C44 were obtained in the cubic phase for the first time. The comparison of C11 and C44 with those of other halide perovskites showed that C11 of MAPbCl3 is larger and C44 is slightly smaller compared to the values of MAPbBr3 and MAPbI3. It suggests that MAPbCl3 has a more compact structure (smaller lattice constant) along with stronger binding forces, causing larger C11 and bulk modulus in this compound, and that the shear rigidity is exceedingly small similar to other halide perovskites. The reported elastic constants in this study may serve as a testbed for theoretical and calculational approaches for MAPbCl3.
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Affiliation(s)
- Jeong Woo Lee
- School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon 24252, Korea; (J.W.L.); (F.H.N.)
| | - Furqanul Hassan Naqvi
- School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon 24252, Korea; (J.W.L.); (F.H.N.)
| | - Jae-Hyeon Ko
- School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon 24252, Korea; (J.W.L.); (F.H.N.)
- Correspondence:
| | - Tae Heon Kim
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea; (T.H.K.); (C.W.A.)
| | - Chang Won Ahn
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea; (T.H.K.); (C.W.A.)
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Tan CS, Yang CC. Optoelectronic Properties Prediction of Lead-Free Methylammonium Alkaline-Earth Perovskite Based on DFT Calculations. ACS OMEGA 2022; 7:16204-16210. [PMID: 35571785 PMCID: PMC9097191 DOI: 10.1021/acsomega.2c01695] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 03/30/2022] [Indexed: 06/15/2023]
Abstract
Dynamical stability plays an essential role in phase transition and structure, and it could be a fundamental method of discovering new lead-free perovskite materials. The perovskite materials are well-known for their excellent optoelectronic properties, but the lead element inside could be a hindrance to future development. This research is trying to predict the promising cation candidates in the high-temperature application for lead-free perovskite materials from the replacement of lead in MAPbCl3 (MA = methylammonium) with alkaline-earth cations. The alkaline-earth cations are of a stable positive divalent sort, which is the same as Pb, and most of them are abundant in nature. Therefore, by improving the dynamical stability, the Mg2+, Ca2+, and Sr2+ cations replacement of lead ions could stabilize the perovskite structure by decreasing the imaginary part of phonon density of states. Finally, the density functional theory results show that the MACaCl3 could be a dynamic stable lead-free methylammonium perovskite material with an ultrawide band gap (5.96 eV).
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Lin CH, Hu L, Guan X, Kim J, Huang CY, Huang JK, Singh S, Wu T. Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108616. [PMID: 34995372 DOI: 10.1002/adma.202108616] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
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Affiliation(s)
- Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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