Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite

Colloidal Synthesis of Hollow Double Perovskite Nanocrystals and Their Applications in X-ray Imaging

Rare earth-based halide double perovskites are regarded as an emerging class of X-ray scintillation materials. However, the majority of related scintillator applications are still focused on single crystal and powder systems; the application of nanocrystal (NC) scintillators is rarely reported. Here, we present the synthesis of high-purity Cs2NaTbCl6 NCs by an improved hot-injection method. Interestingly, hollow Cs2NaTbCl6 NCs are observed, the monitoring of the growth process indicates that micrometer-sized NaCl is the initial product, and then the NaCl would convert into Cs2NaTbCl6 NCs through the diffusion of Cs+ and Tb3+ into NaCl lattice, and the faster outward diffusion of Na+ results in the formation of hollow NCs. The double perovskite NCs exhibit green light emission, and the photoluminescence intensity can be significantly enhanced through Ce3+ doping. In particular, the Cs2NaTbCl6:5%Ce3+ scintillator exhibits a linear response and a low detection limit of 79.09 nGy/s when exposed to X-rays. Furthermore, a flexible scintillator film for X-ray imaging is prepared by mixing NCs with polymer, showing a high spatial resolution imaging capability of 10 lp/mm. This work provides a new strategy for hollow perovskite NCs and may shed light on the synthesis of related hollow NCs and their applications in X-ray detection.

Chemical Aspects of Halide Perovskite Nanocrystals

Halide perovskite nanocrystals (HPNCs) are currently among the most intensely investigated group of materials. Structurally related to the bulk halide perovskites (HPs), HPNCs are nanostructures with distinct chemical, optical, and electronic properties and significant practical potential. One of the keys to the effective exploitation of the HPNCs in advanced technologies is the development of controllable, reproducible, and scalable methods for preparation of materials with desired compositions, phases, and shapes and low defect content. Another important condition is a quantitative understanding of factors affecting the chemical stability and the optical and electronic properties of HPNCs. Here we review important recent developments in these areas. Following a brief historical prospective, we provide an overview of known chemical methods for preparation of HPNCs and approaches used to control their composition, phase, size, and shape. We then review studies of the relationship between the chemical composition and optical properties of HPNCs, degradation mechanisms, and effects of charge injection. Finally, we provide a short summary and an outlook. The aim of this review is not to provide a comprehensive summary of all relevant literature but rather a selection of highlights, which, in the subjective view of the authors, provide the most significant recent observations and relevant analyses.

Advancements and Prospects in Perovskite Solar Cells: From Hybrid to All-Inorganic Materials

Hybrid perovskites, materials composed of metals and organic substances in their structure, have emerged as potential materials for the new generation of photovoltaic cells due to a unique combination of optical, excitonic and electrical properties. Inspired by sensitization techniques on TiO2 substrates (DSSC), CH3NH3PbBr3 and CH3NH3PbI3 perovskites were studied as a light-absorbing layer as well as an electron-hole pair generator. Photovoltaic cells based on per-ovskites have electron and hole transport layers (ETL and HTL, respectively), separated by an ac-tive layer composed of perovskite itself. Major advances subsequently came in the preparation methods of these devices and the development of different architectures, which resulted in an efficiency exceeding 23% in less than 10 years. Problems with stability are the main barrier to the large-scale production of hybrid perovskites. Partially or fully inorganic perovskites appear promising to circumvent the instability problem, among which the black perovskite phase CsPbI3 (α-CsPbI3) can be highlighted. In more advanced studies, a partial or total substitution of Pb by Ge, Sn, Sb, Bi, Cu or Ti is proposed to mitigate potential toxicity problems and maintain device efficiency.

Enhanced performance of BiI3-incorporated CsPbBr3 solar cells

CsPbBr3 all-inorganic perovskite solar cells (PSCs) have been extensively investigated due to their remarkable stability. However, their limited film quality and wide bandgap result in a low photoelectric conversion efficiency (PCE). In this study, BiI3 was incorporated into CsPbBr3 films to synergistically enhance light absorption and film quality. It was found that the partial substitution of Pb2+ and Br- with Bi3+ and I- in CsPbBr3 improved film quality, enhanced light absorption, and facilitated charge transfer and extraction. The device incorporating BiI3-incorporated CsPbBr3 as a light absorbing layer achieved an efficiency of 9.54%, exhibiting a significant enhancement of 19.4% compared to the undoped device. This work provides a new incorporating strategy that collaboratively improves light absorption and film quality.

Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr3

Aliovalent substitution of the B component in ABX₃ metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr₃. Powder X-ray diffraction (XRD) and solid-state ¹¹⁹Sn, ¹³³Cs and ²⁰⁹Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.

Br vacancy engineering in Cs3Bi2Br9 for photocatalytic NO oxidation under visible light

Photocatalysis using the visible light of the sun is an environmentally friendly method of eliminating the NOx pollutant from the ambient air. Although Cs₃Bi₂Br₉, a semiconductor with a band gap of 2.54 eV, may be a strong absorber of visible light, its photocatalysis towards the abatement of NOx is unknown. In this study, Cs₃Bi_2-xPb_xBr_9-x (0 ≤ x ≤ 0.0789) are used for the photocatalytic oxidation of NOx. A significant NO oxidation efficiency (80%) is observed over Cs₃Bi_2-xPb_xBr_9-x (x = 0.0443) under visible light, which is attributable to the Br vacancy (V_Br) brought about by Pb²⁺ doping. The presence of V_Br increased the ionic selectivity of in the oxidized NO. At higher Pb doping level, two HONOs adsorbed on the V_Br, linked, and then reduced by hot electrons to produce N₂O₂^2-. The di-azo coupling could passivate the activation of NO on the V_Br. This work advances the defect engineering of halide for the photo-driving solid-gas reaction in air.

Diffuse Reflectance Spectroscopy with Dilution: A Powerful Method for Halide Perovskites Study

Halide perovskites and their low-dimensional analogs are promising semiconductor materials for solar cells, LEDs, lasers, detectors and other applications in the area of photonics. The most informative optical property of semiconductor photonics materials is the absorption spectrum enabling observation of the fundamental absorption edge, exciton structure, defect-related bands, etc. Traditionally, in the study of halide perovskites, this spectrum is obtained by absorption spectroscopy of thin films or diffuse reflectance spectroscopy of powders. The first method is applicable only to compounds with the developed thin film deposition technology, and in the second case, a large absorption coefficient narrows the observations down to the sample transparency region. In this paper, we suggest the diffuse reflectance spectroscopy with dilution as a method for obtaining the full-range absorption spectrum from halide perovskite powders, and demonstrate its application to practically important cases.

Eco-friendly MA3Bi2I9perovskite thin films based ammonia sensor

Organic-inorganic perovskite halides (OIPH) have emerged as a wonder material with growing interest in sensors detecting various toxic gases. However, lead toxicity represents a potential obstacle, and therefore finding lead-free cost-effective compatible materials for gas sensing applications is essential. In this work, methylammonium bismuth iodide i.e. (CH₃NH₃)₃Bi₂I₉(MABI) perovskite thin films-based ammonia (NH₃) sensor was synthesized using an antisolvent-assisted one-step spin coating method. The MABI sensor shows a linear relationship between the responsivity and concentration of NH₃with excellent reversibility, high gas responsivity, and humidity stability. The MABI thin-film sensor exhibits a maximum gas response of 24%, a short response/recovery time i.e. 0.14 s /8.15 s and good reversibility at 6 ppm of NH₃. It was observed that MABI thin films based sensors have excellent ambient stability over a couple of months. This work reveals that it is feasible to design high-performance gas sensors based on environmentally-friendly Bi-based OIPH materials.

Tuning the Band Gap in the Halide Perovskite CsPbBr3 through Sr Substitution

The ability to continuously tune the band gap of a semiconductor allows its optical properties to be precisely tailored for specific applications. We demonstrate that the band gap of the halide perovskite CsPbBr₃ can be continuously widened through homovalent substitution of Sr²⁺ for Pb²⁺ using solid-state synthesis, creating a material with the formula CsPb_1-xSr_xBr₃ (0 ≤ x ≤ 1). Sr²⁺ and Pb²⁺ form a solid solution in CsPb_1-xSr_xBr₃. Pure CsPbBr₃ has a band gap of 2.29(2) eV, which increases to 2.64(3) eV for CsPb_0.25Sr_0.75Br₃. The increase in band gap is clearly visible in the color change of the materials and is also confirmed by a shift in the photoluminescence. Density-functional theory calculations support the hypothesis that Sr incorporation widens the band gap without introducing mid-gap defect states. These results demonstrate that homovalent B-site alloying can be a viable method to tune the band gap of simple halide perovskites for absorptive and emissive applications such as color-tunable light-emitting diodes, tandem solar cells, and photodetectors.

Modulating the Carrier Relaxation Dynamics in Heterovalently (Bi3+) Doped CsPbBr3 Nanocrystals

Manipulation of intrinsic carrier relaxation is crucial for designing efficient lead halide perovskite nanocrystal (NC) based optoelectronic devices. The influence of heterovalent Bi³⁺ doping on the ultrafast carrier dynamics and hot carrier (HC) cooling relaxation of CsPbBr₃ NCs has been studied using femtosecond transient absorption spectroscopy and first-principles calculations. The initial HC temperature and LO phonon decay time point to a faster HC relaxation rate in the Bi³⁺-doped CsPbBr₃ NCs. The first-principles calculations disclose the acceleration of carrier relaxation in Bi³⁺-doped CsPbBr₃ NCs due to the appearance of localized bands (antitrap states) within the conduction band. The higher Born effective charges (Z*) and higher soft energetic optical phonon density of states cause higher electron-phonon scattering rates in the Bi-doped CsPbBr₃ system, which is responsible for the faster HC cooling rate in doped systems.

Metal Halide Perovskite Based Heterojunction Photocatalysts

With fascinating photophysical properties and a strong potential to utilize solar energy, metal halide perovskites (MHPs) have become a prominent feature within photocatalysis research. However, the effectiveness of single MHP photocatalysts is relatively poor. The introduction of a second component to form a heterojunction represents a well-established route to accelerate carrier migration and boost reaction rates, thus increasing the photoactivity. Recently, there have been several scientific advances related to the design of MHP-based heterojunction photocatalysts, including Schottky, type II, and Z-scheme heterojunctions. In this Review, we systematically discuss and critically appraise recent developments in MHP-based heterojunction photocatalysis. In addition, the techniques for identifying the type of active heterojunctions are evaluated and we conclude by briefly outlining the ongoing challenges and future directions for promising photocatalysts based on MHP heterojunctions.

Room-Temperature Doping of CsPbBr3 Nanocrystals with Aluminum

B-site doping is an emerging strategy for tuning the emission wavelength of cesium lead halide ABX₃ nanocrystals. We present a simple method for the postsynthetic doping of CsPbBr₃ nanocrystals with aluminum at room temperature by exposing them to a solution of AlBr₃ in dibromomethane. Despite the much smaller ionic radius of Al³⁺ compared to that of Pb²⁺, nominal doping levels in a range from 8.1% to 24.3% were obtained when increasing the Al/Pb feed ratio from 1 to 4.5. Al³⁺ introduction leads to a hypsochromic shift of the photoluminescence (PL) emission of the CsPbBr₃ nanocrystals. The PL peak position is highly stable over at least 6 months and tunable in a range of 510 to 480 nm by increasing the doping level. Structural analyses revealed a linear correlation between the PL energy and the lattice parameter with a slope of -1.96 eV/Å.

Improving the Structural, Optical and Photovoltaic Properties of Sb- and Bi- Co-Doped MAPbBr3 Perovskite Solar Cell

We prepared 1% Bi- and (0, 0.5%, 1% and 1.5%) Sb- co-doped MAPbBr3 films by a sol-gel spin coating technique. For the first time, the detailed structural properties including grain size, dislocation line density, d-spacing, lattice parameters, and volume of co-doped MAPbBr3 films have been investigated. XRD confirmed the cubic structure of MAPbBr3 with high crystallinity and co-doping of Bi and Sb. The 1% Bi and 1% Sb co-doping have a surprising effect in MAPbBr3 structures, such as large grain size (59.5 nm), d-space value (6.23 Å), small dislocation line dislocation (2.79 × 1018 m−2), and small lattice parameters (a = b = c = 6.3 Å) and volume of unit cell. The detailed optical properties, including energy band gap (Eg), refractive index (n), extinction coefficient (k) and dielectric constant (Ɛ), which are very important for optoelectronics applications, were investigated by UV-Vis spectroscopy. The film of 1% Bi and 1% Sb co-doped MAPbBr3 showed good optical response including small Eg, high n, low value of k, high real and low imaginary parts of dielectric constant, making it good for solar cell applications. Solar cells were fabricated from these films. The cell fabricated with pure MAPbBr3 has Jsc of 8.72 mA cm−2, FF of 0.66, Voc of 1.29 V, and η of 7.5%. All the parameters increased by co-doping of Bi and Sb in MAPbBr3 film. The cell fabricated with 1% Bi and 1% Sb co-doped MAPbBr3 film had high current density (12.12 mA-cm−2), open circuit voltage (Voc), fill factor (0.73), and high efficiency (11.6%). This efficiency was 65% larger than a pure MAPbBr3-based solar cell.

Intrinsic doping limitations in inorganic lead halide perovskites

Inorganic halide perovskites (HP's) of the CsPbX₃ (X = I, Br, Cl) type have reached prominence in photovoltaic solar cell efficiencies, leading to the expectation that they are a new class of semiconductors relative to the traditional ones. Peculiarly, they have shown an asymmetry in their ability to be doped by holes vs. electrons. Indeed, both structural defect-induced doping as well as extrinsic impurity-induced doping strangely often result in HP's in a unipolar doping (dominantly p-type) with low free carriers' concentration. This raises the question whether such doping limitations presents just a temporary setback due to insufficient optimization of the doping process, or perhaps this represents an intrinsic, physically-mandated bottleneck. In this paper we study three fundamental Design Principles (DP's) for ideal doping, applying them via density functional doping theory to these HP's, thus identifying the violated DP that explains the doping limitations and asymmetry in these HP's. Here, the target DP are: (i) requires that the thermodynamic transition level between different charge states induced by the dopants must ideally be energetically shallow both for donors (n-type) or acceptors (p-type); DP-(ii) requires that the 'Fermi level pinning energies' for electrons E(n)pin and holes E(p)pin (being the limiting value of the Fermi level before a structural defect that compensate the doping forms spontaneously) should ideally be located inside the conduction band for n-type doping and inside the valence band for p-type doping. DP-(iii) requires that the doping-induced shift in equilibrium Fermi energy ΔE(n)F towards the conduction band for n-type doping (shift of ΔE(p)F towards the valence band, for p-type doping) to be sufficiently large. We find that, even though in HP's based on Br and Cl there are numerous shallow level dopants that satisfy DP-(i), in contrast DP-(ii) is satisfied only for holes and DP-(iii) fails for both holes and electrons, being the ultimate bottleneck for the n-type doping in Iodide HP's. This suggests an intrinsic mechanism for doping limitations in this class of semiconductors in terms of recognized physical mechanisms.

Luminescence Change from Orange to Blue for Zero-Dimensional Cs2 InCl5 (H2 O) Metal Halides in Water and a New Post-doping Method

Zero-dimensional metal halides have attracted much attention due to their attractive photoelectric properties. Here, we propose a new strategy of synthesizing metal halides crystals by recrystallization in water. The as-synthesized Cs₂ InCl₅ (H₂ O)-orange crystals are dissolved and recrystallized in water (Cs₂ InCl₅ (H₂ O)-blue), with its photoluminescence (PL) changing from orange to blue, both of which are derived from self-trapping excitons (STEs). The time-resolved photoluminescence (TRPL) spectrum of Cs₂ InCl₅ (H₂ O)-blue shows that it has an ultralong lifetime up to milliseconds (τ=52.98 ms), which is expected to be applied in biological sensors. The photoluminescence quantum yield (PLQY) increases from 2.25% to 11.61% in the self-assembly process. By using a post-doping method, the PL of crystals turns into red when we introduce Mn²⁺ as dopant while there is no obvious change upon using a traditional solvent-thermal method. Recrystallization in water and post-doping provide a new perspective for the synthesis and doping of metal halides.

Mixed Group 14–15 Metalates as Model Compounds for Doped Lead Halide Perovskites

Doping and alloying are valuable tools for modifying and enhancing the properties and performance of lead halide perovskites. However, the effects of heterovalent doping with Sb³⁺ and Bi³⁺ cations are still a matter of current investigation. Due to the different charge of the dopants compared to the constituting Pb²⁺ ions, a simultaneous creation of defects is unavoidable and the influence of these defects and the actual metal substitution become entangled. Herein, we present the first 14–15 iodido metalates, (BED)₄PbE₂I₁₆ (BED=N‐benzylethylenediammonium; E=Sb (1), Bi (2)), which are model compounds for doped lead iodide perovskites and display surprisingly low band gaps of 2.01 (1) and 1.88 eV (2). Quantum chemical investigations show that this stems from a good electronic match between the PbI₆ and EI₆ units of the compounds. Our results provide a model system for doped perovskites, but also represent the first examples of a promising new class of metal halide materials.

Photodiodes based on a MAPbBr3/Bi3+-doped MAPbCl3 single crystals heterojunction for the X-ray detection

The epitaxially fabricated MAPbBr₃/Bi³⁺-doped MAPbCl₃ PSCs pN heterojunction shows advanced X-ray detection performance with decreased dark current density and faster response time under relatively high external reverse voltage.

Photogenerated charge separation and recombination path modification in monocline Lu2WO6via lattice transition and Bi-O antibonding states

Monoclinic Lu2WO6 undergoes diphase-to-perovskite BiLuWO6 transition via selective occupancy of Bi in three Lu sites. The transformation mechanism, process, and structure stabilities are revealed by variable cell nudged elastic band method, video, and phonon spectrum. Lattice transition brings about photogenerated charge separation in BiLuWO6. This is verified by indirect band gap transition, high electron migration rate, weak exciton binding energy, large photocurrent response, and small impedance. The electron-hole life time is elongated to produce abundant superoxide and hydroxyl radicals for the degradation of rhodamine B and phenol molecules. Bi-O antibonding states serve as immediate energy levels to change the recombination path, inducing 340 nm excitation band and 510 nm green light emission of Lu2WO6. Furthermore, multicolor emission of 1 at% Bi3+ + RE3+ (RE = Sm/Eu/Dy)-codoped Lu2WO6 is acquired via synergistic modification of the Bi-O antibonding state and RE3+ 4f states. Thus, the photogenerated charge motion in Lu2WO6 is tuned to expand application fields.

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

Theoretical study on the effect of the optical properties and electronic structure for the Bi-doped CsPbBr3

Metal doping, including Bi, Yb, Eu, Sb and so on, are important means to improve the photoelectric properties and stability of metal halide perovskite materials. Among these works, Bi-doped CsPbBr₃ especially has attracted much attention for both experimental and theoretical investigation. But there are still some arguments to be solved. One view thinks that Bi doping in CsPbBr₃ not only influences the band structure, but also improves the charge transfer (Raihana et al 2017 J. Am. Chem. Soc. 139 731-7). The other supported the points that there are no changes in the valence band structure of Bi-doped CsPbBr₃ and the concept of the band-gap engineering in Bi-doped CsPbBr₃ halide perovskite is not valid (Olga et al 2018 J. Phys. Chem. Lett. 9 5408-11). They also have different opinions for the reason of the red-shift phenomenon caused by Bi-doped CsPbBr₃. In this work, the density functional theory (DFT) based first-principles methods is adopted to investigate the effect of the optical properties and electronic structure for Bi doping CsPbBr₃. The calculated results clarify that the red-shift phenomenon is caused by the slight reduction of band gap and the transition levels of Bi_i and Bi_Pb defects. The values of red-shift also were estimated about 150 meV for Bi_i defects, which is close the experimental value of about 140 meV. Moreover, our studies also show that the Bi doping does not affect the valence bands, but Bi_i defects change the electron distribution of the conduction band. Our work and experimental results support and confirm each other, which provides a useful reference for the study of Sb-doped CsPbBr₃, Eu-doped CsPbBr₃ and so on.

Charge-Carrier Trapping Dynamics in Bismuth-Doped Thin Films of MAPbBr3 Perovskite

Successful chemical doping of metal halide perovskites with small amounts of heterovalent metals has attracted recent research attention because of its potential to improve long-term material stability and tune absorption spectra. However, some additives have been observed to impact negatively on optoelectronic properties, highlighting the importance of understanding charge-carrier behavior in doped metal halide perovskites. Here, we present an investigation of charge-carrier trapping and conduction in films of MAPbBr₃ perovskite chemically doped with bismuth. We find that the addition of bismuth has no effect on either the band gap or exciton binding energy of the MAPbBr₃ host. However, we observe a substantial enhancement of electron-trapping defects upon bismuth doping, which results in an ultrafast charge-carrier decay component, enhanced infrared emission, and a notable decrease of charge-carrier mobility. We propose that such defects arise from the current approach to Bi-doping through addition of BiBr₃, which may enhance the presence of bromide interstitials.

Investigation of the Mn dopant-enhanced photoluminescence performance of lead-free Cs2AgInCl6 double perovskite crystals

The lead-free double perovskite Cs2AgInCl6 is a potential candidate for LEDs, the photoluminescence performance of which is reinforced greatly by Mn doping. Here, we analyzed the geometric, electronic and photoluminescence properties of Mn-doped Cs2AgInCl6 by means of first-principle calculations. We found that in the interior of Cs2AgInCl6, the Mn dopant formed defect complexes by substituting an Ag atom and generating an Ag vacancy (MnAgVAg) owing to the charge balance and the weak distortion of the metal octahedra. The MnAgVAg defect introduced two defect bands in the forbidden gap, which was contributed predominantly by the 3d orbitals of the Mn2+ ions. The electron transition of the Mn2+ ions from the first excited state to the ground state, i.e., from 4T1 to 6A1 states, gives rise to the PL spectrum that is lower than the bandgap. Therefore, we show that the Mn dopant indeed reinforces the PL performance of Cs2AgInCl6 greatly and is beneficial for its use as an LED material.

Metal Cations in Efficient Perovskite Solar Cells: Progress and Perspective

Metal halide perovskite solar cells (PVSCs) have revolutionized photovoltaics since the first prototype in 2009, and up to now the highest efficiency has soared to 24.2%, which is on par with commercial thin film cells and not far from monocrystalline silicon solar cells. Optimizing device performance and improving stability have always been the research highlight of PVSCs. Metal cations are introduced into perovskites to further optimize the quality, and this strategy is showing a vigorous development trend. Here, the progress of research into metal cations for PVSCs is discussed by focusing on the position of the cations in perovskites, the modulation of the film quality, and the influence on the photovoltaic performance. Metal cations are considered in the order of alkali cations, alkaline earth cations, then metal cations in the ds and d regions, and ultimately trivalent cations (p- and f-block metal cations) according to the periodic table of elements. Finally, this work is summarized and some relevant issues are discussed.

Advanced diffuse reflectance spectroscopy for studies of photochromic/photoactive solids

The present article reports novel opportunities of diffuse reflectance (DR) spectroscopy extended through the use of a cryostat accessory for UV-vis-NIR spectrophotometers to investigate temperature dependences of DR spectra at the fundamental absorption edge of semiconductors at T  =  90-600 K. Examined are rutile TiO₂, a photochromic rutile TiO₂ with strong absorption in the visible region, and the halide double perovskite Cs₂AgBiBr₆ that exhibited two optical band-to-band transitions in low-temperature DR spectra. Also reported are DR spectral and kinetics measurements of the separation of photogenerated charge carriers in various trap sites, their thermostimulated detrapping and their recombination in two different photochromic materials. The similarity between absorption and temperature-programmed annealing (TPA) spectra induced in the UV and Vis regions yielded physical evidence of the photo-formation of charge carriers upon Vis-light excitation of intrinsic defects (F-type centers) in yellow rutile TiO₂. High-temperature oxidative/reductive treatments of samples, together with spectral and kinetics measurements were performed in situ with the accessory. Results led to assigning color centers in yellow TiO₂ to Ti³⁺ centers as deep electron traps, and to the establishment of several types of Ti³⁺-based color centers that include extra-negatively charged Ti ^δ+ centers (3  >  δ  >  2). Photochromic occurrences are also elucidated in the Bi-doped perovskite CsPbBr₃ under illumination in the region of intrinsic absorption and annealing of photoinduced absorption at T  =  200-400 K. These phenomena are described in terms of the photogeneration of charge carriers followed by their trapping, which yielded Bi-related electron color centers responsible for the photoinduced absorption and for the thermostimulated detrapping of photoholes that ultimately recombine with the trapped electrons. The establishment of photochromism in the perovskites may lead to a further understanding of photoinduced and dark reversible phenomena in halide perovskites and halide perovskite-based solar cells.

Large-Area Organic-Free Perovskite Solar Cells with High Thermal Stability

Organic-free perovskite solar cells (PSCs) have been considered as the most promising candidate for achieving long-term stability. Here, we demonstrate an organic-free PSC consisting of inorganic CsPbI₂Br perovskite, nickel oxide hole transport layer, and niobium oxide electron transport layer. A maximum power conversion efficiency (PCE) of 11.20% is achieved with an active area of 5 cm², and it increases to 14.11% with smaller area. More importantly, the organic-free PSCs show excellent thermal stability with PCE remaining above 98% of its initial value when heated at 100 °C for 150 min. Postannealing at a proper temperature further increases its maximum PCE to 14.45%, which is the highest among any reported all-inorganic PSCs with a p-i-n structure. The enhanced performance of the postannealed device is ascribed to the decreased trap-state density and improved interface charge-transfer properties. These results demonstrated that this novel organic-free device architecture can be employed to fabricate efficient and stable PSCs for large-scale manufacturing.

Reducing Defects in Halide Perovskite Nanocrystals for Light-Emitting Applications

The large specific surface area of perovskite nanocrystals (NCs) increases the likelihood of surface defects compared to that of bulk single crystals and polycrystalline thin films. It is thus crucial to comprehend and control their defect population in order to exploit the potential of perovskite NCs. This Perspective describes and classifies recent advances in understanding defect chemistry and avenues toward defect density reduction in perovskite NCs, and it does so in the context of the promise perceived in light-emitting devices. Several pathways for decreasing the defect density are explored, including advanced NC syntheses, new surface-capping strategies, doping with metal ions and rare earths, engineering elemental compensation, and the translation of core-shell heterostructures into the perovskite materials family. We close with challenges that remain in perovskite NC defect research.

Yb- and Mn-Doped Lead-Free Double Perovskite Cs2AgBiX6 (X = Cl-, Br-) Nanocrystals

Lead-free double perovskite nanocrystals (NCs) have emerged as a new category of materials that hold the potential for overcoming the instability and toxicity issues of lead-based counterparts. Doping chemistry represents a unique avenue toward tuning and optimizing the intrinsic optical and electronic properties of semiconductor materials. In this study, we report the first example of doping Yb³⁺ ions into lead-free double perovskite Cs₂AgBiX₆ (X = Cl^-, Br^-) NCs via a hot injection method. The doping of Yb³⁺ endows the double perovskite NCs with a newly emerged near-infrared emission band (sensitized from the NC hosts) in addition to their intrinsic trap-related visible photoluminescence. By controlling the Yb-doping concentration, the dual emission profiles and photon relaxation dynamics of the double perovskite NCs can be systematically tuned. Furthermore, we have successfully inserted divalent Mn²⁺ ions in Cs₂AgBiCl₆ NCs and observed emergence of dopant emission. Our work illustrates an effective and facile route toward modifying and optimizing optical properties of double perovskite Cs₂AgBiX₆ (X = Cl^-, Br^-) NCs with an indirect bandgap nature, which can broaden a range of their potential applications in optoelectronic devices.

Bismuth Halide Perovskite-Like Materials: Current Opportunities and Challenges

Metal halide perovskites have recently emerged as promising photovoltaic materials for application in solar cells with high power conversion efficiencies exceeding 23 %. In the years since such high efficiencies have been attained, investigations have mainly focused on the state-of-the-art 3 D Pb-based halide perovskite materials. However, the high toxicity of Pb and intrinsic instability of the pristine perovskite materials have become great obstacles to their industrial application and commercialization. To address these serious issues, it is imperative to explore low-toxicity metal halide perovskites or their derivatives to substitute Pb-based materials for better future development. Currently, Bi-based halide perovskite-like materials are attracting increased interest as environmentally friendly alternatives for photovoltaic applications. This Concept highlights recent advances of Bi-based halide perovskite-like materials in terms of understanding and modifying their fundamental properties and related device performance, with a focus on current challenges, opportunities for future development, and diversification of device applications.

Luminescent perovskites: recent advances in theory and experiments

This review summarizes previous research on luminescent perovskites, including oxides and halides, with different structural dimensionality. The relationship between the crystal structure, electronic structure and properties is discussed in detail.

Synthesis of All-Inorganic Cd-Doped CsPbCl3 Perovskite Nanocrystals with Dual-Wavelength Emission

Doped lead halide perovskite nanocrystals (NCs) have garnered significant attention due to their superior optoelectronic properties. Here, we report a synthesis of Cd-doped CsPbCl₃ NCs by decoupling Pb- and Cl-precursors in a hot injection method. The resulting Cd-doped perovskite NCs manifest a dual-wavelength emission profile with the first reported example of Cd-dopant emission. By controlling Cd-dopant concentration, the emission profile can be tuned with a dopant emission quantum yield of up to 8%. A new secondary emission (∼610 nm) is induced by an energy transfer process from photoexcited hosts to Cd-dopants and a subsequent electronic transition from the excited state (³E_g) to the ground state (¹A_1g) of [CdCl₆]^4- units. This electronic transition matches well with a first-principles density functional theory calculation. Further, the optical behavior of Cd-doped CsPbCl₃ NCs can be altered through postsynthetic anion-exchange reactions. Our studies present a new model system for doping chemistry studies in semiconductors for various optoelectronic applications.