Photomultiplication Type Broad Response Organic Photodetectors with One Absorber Layer and One Multiplication Layer

Boosting the UV-vis-NIR Photodetection Performance of MoS2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy

Navigating more effective methods to enhance the photon utilization of photodetectors poses a significant challenge. This study initially investigates the impact of morphological alterations in 2H-MoS2 on photodetector (PD) performance. The results reveal that compared to layered MoS2 (MoS2 NLs), MoS2 nanotubes (MoS2 NTs) impart a cavity enhancement effect through multiple light reflections. This structural feature significantly enhances the photodetection performance of the MoS2-based PDs. We further employ the heterojunction strategy to construct Y-TiOPc NPs:MoS2 NTs, utilizing Y-TiOPc NPs (Y-type titanylphthalocyanine) as the vis-NIR photosensitizer and MoS2 NTs as the photon absorption enhancer. This approach not only addresses the weak absorption of MoS2 NTs in the near-infrared region but also enhances carrier generation, separation, and transport efficiency. Additionally, the band bending phenomenon induced by trapped-electrons at the interface between ITO and the photoactive layer significantly enhances the hole tunneling injection capability from the external circuit. By leveraging the synergistic effects of the aforementioned strategies, the PD based on Y-TiOPc NPs:MoS2 NTs (Y:MT-PD) exhibits superior photodetection performance in the wavelength range of 365-940 nm compared to MoS2 NLs-based PD and MoS2 NTs-based PD. Particularly noteworthy are the peak values of key metrics for Y:MT-PD, such as EQE, R, and D* that are 4947.6%, 20588 mA/W, and 1.94 × 1012 Jones, respectively. The multiperiod time-resolved photocurrent response curves of Y:MT-PD also surpass those of the other two PDs, displaying rapid, stable, and reproducible responses across all wavelengths. This study provides valuable insights for the further development of photoactive materials with a high photon utilization efficiency.

An ultra-sensitive colloidal quantum dot infrared photodiode exceeding 100 000% external quantum efficiency via photomultiplication

In this study, we present ultrasensitive infrared photodiodes based on PbS colloidal quantum dots (CQDs) using a double photomultiplication strategy that utilizes the accumulation of both electron and hole carriers. While electron accumulation was induced by ZnO trap states that were created by treatment in a humid atmosphere, hole accumulation was achieved using a long-chain ligand that increased the barrier to hole collection. Interestingly, we obtained the highest responsivity in photo-multiplicative devices with the long ligands, which contradicts the conventional belief that shorter ligands are more effective for optoelectronic devices. Using these two charge accumulation effects, we achieved an ultrasensitive detector with a responsivity above 7.84 × 102 A W-1 and an external quantum efficiency above 105% in the infrared region. We believe that the photomultiplication effect has great potential for surveillance systems, bioimaging, remote sensing, and quantum communication.

Self-Powering Sensory Device with Multi-Spectrum Image Realization for Smart Indoor Environments

The development of organic-based optoelectronic technologies for the indoor Internet of Things market, which relies on ambient energy sources, has increased, with organic photovoltaics (OPVs) and photodetectors (OPDs) considered promising candidates for sustainable indoor electronic devices. However, the manufacturing processes of standalone OPVs and OPDs can be complex and costly, resulting in high production costs and limited scalability, thus limiting their use in a wide range of indoor applications. This study uses a multi-component photoactive structure to develop a self-powering dual-functional sensory device with effective energy harvesting and sensing capabilities. The optimized device demonstrates improved free-charge generation yield by quantifying charge carrier dynamics, with a high output power density of over 81 and 76 µW cm-2 for rigid and flexible OPVs under indoor conditions (LED 1000 lx (5200 K)). Furthermore, a single-pixel image sensor is demonstrated as a feasible prototype for practical indoor operating in commercial settings by leveraging the excellent OPD performance with a linear dynamic range of over 130 dB in photovoltaic mode (no external bias). This apparatus with high-performance OPV-OPD characteristics provides a roadmap for further exploration of the potential, which can lead to synergistic effects for practical multifunctional applications in the real world by their mutual relevance.

Construction of organic/GaN heterostructures for DUV-to-NIR broadband photodetection

Herein, a broadband photodetector (BPD) is constructed with consistent and stable detection abilities for deep ultraviolet to near-infrared spectral range. The BPD integrates the GaN template with a hybrid organic semiconductor, PM6:Y6, via the spin-coating process, and is fabricated in the form of asymmetric metal-semiconductor-metal structure. Under an optimal voltage, the device shows consistent photoresponse within 254 to 850 nm, featuring high responsivity (10 to 60 A/W), photo-to-dark-current ratio over 103, and fast response time. These results show the potential of such organic/GaN heterojunctions as a simple and effective strategy to build BPDs for a reliable photo-sensing application in the future.

Wearable Electronics Based on Stretchable Organic Semiconductors

Wearable electronics are attracting increasing interest due to the emerging Internet of Things (IoT). Compared to their inorganic counterparts, stretchable organic semiconductors (SOSs) are promising candidates for wearable electronics due to their excellent properties, including light weight, stretchability, dissolubility, compatibility with flexible substrates, easy tuning of electrical properties, low cost, and low temperature solution processability for large-area printing. Considerable efforts have been dedicated to the fabrication of SOS-based wearable electronics and their potential applications in various areas, including chemical sensors, organic light emitting diodes (OLEDs), organic photodiodes (OPDs), and organic photovoltaics (OPVs), have been demonstrated. In this review, some recent advances of SOS-based wearable electronics based on the classification by device functionality and potential applications are presented. In addition, a conclusion and potential challenges for further development of SOS-based wearable electronics are also discussed.

Origins of the Photocurrent Multiplication Effect in the Polythiophene-Based Photodetectors

The photocurrent multiplication (PM) effect has been used to boost the device performance of polymer-based photodetectors (PDs), but its origin is rarely addressed. In this study, the origins of the PM effect in polymer PDs based on the P3HT:PC₇₁ BM bulk heterojunction (BHJ) composite thin film, where P3HT is poly(3-hexylthiophene), and PC₇₁ BM is [6,6]phenyl-C₇₁ -butyric acid methyl ester, through both computational simulation and experimental investigation are reported. Systematic studies indicate that two key factors play an important role in the realization of the PM effect in polymer PDs. One factor is the work function of the metal electrode, and the other is the PC₇₁ BM aggregations at the interface between the P3HT:PC₇₁ BM BHJ composite thin film and the metal electrode. Moreover, the results from both experimental and computational simulation indicate that the values of the current density under light illumination minus the current density in the dark of polymer PDs are increased simultaneously along with the reduction of the thickness of the P3HT:PC₇₁ BM BHJ composite thin film. The results provide an understanding of the PM effect in polymer PDs and guidance for the development of high-performance polymer PDs based on BHJ composite thin film.

Double-Layered Strategy for Broadband Photomultiplication-Type Organic Photodetectors and Achieving Narrowband Response in Violet, Red, and Near-Infrared Light

Broadband photomultiplication-type organic photodetectors (PM-OPDs) were prepared with PMBBDT:PY3Se-2V (1:1, wt/wt) as the absorbing layer (AL) and PC₇₁BM:P3HT (100:5, wt/wt) as the photomultiplication layer (PML) on the basis of the sandwich structure. The incident photons from ultraviolet light to the near-infrared region can be harvested by AL. The rather less P3HT in PML can produce plenty of isolated hole traps with P3HT surrounded by PC₇₁BM; the electron tunneling injection induced by trapped holes near the Ag electrode can lead to the photomultiplication (PM) phenomenon. The performance of PM-OPDs can be effectively improved by optimizing the AL thickness. The optimal PM-OPDs exhibit a broad spectral response from 300 to 1050 nm as well as an external quantum efficiency (EQE) of 5800% at 340 nm at 10 V bias, along with a specific detectivity (D*) of 3.78 × 10¹³ Jones. The spectral response of PM-OPDs is controlled by the trapped-hole distribution near the Ag electrode, primarily originating from the photogenerated holes in AL. To further optimize the spectral response of PM-OPDs, the optical filter layer (OFL) was used to manipulate light field distribution in AL. The violet, red, and near-infrared-light PM-OPDs were developed by employing different OFLs.

Heterojunction bilayers serving as a charge transporting interlayer reduce the dark current and enhance photomultiplication in organic shortwave infrared photodetectors

Previous approaches to induce photomultiplication in organic diodes have increased the photosignal but lacked control over reducing background noise. This work presents a new interlayer design based on a heterojunction bilayer that concurrently enables photomultiplication and suppresses the dark current in organic shortwave infrared detectors to improve the overall detectivity. The heterojunction bilayer consists of a hole-transporting material copper thiocyanate and an electron-transporting material tin oxide, and this combination offers the ability to block charge injection in the dark. Under illumination, the bilayer promotes trap-assisted photomultiplication by lowering the tunneling barrier and amplifying the photocurrent through the injection of multiple carriers per absorbed photon. Upon incorporating the heterojunction interlayer in photodiodes and upconversion imagers, the devices achieve an external quantum efficiency up to 560% and a detectivity of 3.5 × 10⁹ Jones. The upconversion efficiency of the imager doubles with a 1.7 fold improvement in contrast compared to the imager without the heterojunction interlayer. The new interlayer design is generalizable to work with different organic semiconductors, making it attractive and easy to integrate with emerging organic infrared systems.

Strain-durable dark current in near-infrared organic photodetectors for skin-conformal photoplethysmographic sensors

Sensitive detection of near-infrared (NIR) light is applicable to variety of optical, chemical, and biomedical sensors. Of these diverse applications, NIR photodetectors have been used as a key component for photoplethysmography (PPG) sensors. In particular, because NIR organic photodetectors (OPDs) enable fabrication of stretchable and skin-conformal PPG sensors, they are attaining tremendously increasing interest in both academia and industry. Herein, we report strain-durable and highly sensitive NIR OPDs using an organic bulk heterojunction (BHJ) layer. For effective suppression of dark current, we employed BHJ combination consisting of PTB7-Th:Y6 which forms high energy barrier against transport-injected holes. The optimized OPDs exhibited high specific detectivity up to 2.2 × 10¹² Jones at 800 nm. By constructing the devices on the parylene substrates, we successfully demonstrated stretchable NIR OPDs and high-performance skin-conformal PPG sensors.

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Significant reduction of dark current was achieved from PTB7-Th:Y6 NIR OPDs

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The developed OPD exhibited strain-durable dark current

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OPDs efficiently operated on ultra-thin substrates

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Skin-conformal PPG sensors were demonstrated based on the developed OPDs

Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector

With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM-based OPDs with a broad bandwidth (350-950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC71BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC71BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10-9 A cm-2) under reverse bias at -1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W-1, at -1.5 V), and high detectivity (1.10 × 1013 Jones, under a reverse bias of -1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.

Highly Sensitive and Durable Organic Photodiodes Based on Long-Term Storable NiOx Nanoparticles

Organic optoelectronic devices that can be fabricated at low cost have attracted considerable attention because they can absorb light over a wide frequency range and have high conversion efficiency, as well as being lightweight and flexible. Moreover, their performance can be significantly affected by the choice of the charge-selective interlayer material. Nonstoichiometric nickel oxide (NiO_x) is an excellent material for the hole-transporting layer (HTL) of organic optoelectronic devices because of the good alignment of its valence band position with the highest occupied molecular orbital level of many p-type polymers. Herein, we report a simple low-temperature process for the synthesis of NiO_x nanoparticles (NPs) that can be well dispersed in solution for long-term storage and easily used to form thin NiO_x NP layers. NiO_x NP-based organic photodiode (OPD) devices demonstrated high specific detectivity (D*) values of 10¹²-10¹³ jones under various light intensities and negative biases. The D* value of the NiO_x NP-based OPD device was 4 times higher than that of a conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-based device, an enhancement that originated mainly from the 16 times decreased leakage current. The NiO_x NP-based OPD device demonstrated better reliability over a wide range of light intensities and operational biases in comparison to a device with a conventional sol-gel-processed NiO_x film. More importantly, the NiO_x NP-based OPD showed long-term device stability superior to those of the PEDOT:PSS and sol-gel-processed NiO_x-based devices. We highlight that our low-temperature solution-processable NiO_x NP-based HTL could become a crucial component in the fabrication of stable high-performance OPDs.

Interfacial Electrostatic-Interaction-Enhanced Photomultiplication for Ultrahigh External Quantum Efficiency of Organic Photodiodes

A photomultiplication-type organic photodiode (PM-OPD), where an electric double layer (EDL) is strategically embedded, is demonstrated, with an exceptionally high external quantum efficiency (EQE) of 2 210 000%, responsivity of 11 200 A W^-1 , specific detectivity of 2.11 × 10¹⁴ Jones, and gain-bandwidth product of 1.92 × 10⁷  Hz, as well as high reproducibility. A polymer electrolyte, poly(9,9-bis(3'-(N,N-dimethyl)-N-ethylammoinium-propyl-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene))dibromide is employed as a work-function-modifying layer of indium tin oxide (ITO) to construct an EDL-embedded Schottky junction with p-type polymer semiconductor, poly(3-hexylthiophene-diyl), resulting in not only advantageous tuning of the work function of ITO but also an enhancement of the electron-trapping efficiency due to electrostatic interaction between exposed cations and trapped electrons within isolated acceptor domains. The effects of the EDL on the energetics of the trapped electron states and thus on the gain generation mechanism are confirmed by numerical simulations based on the drift-diffusion approximation of charge carriers. The feasibility of the fabricated high-EQE PM-OPD especially for weak light detection is demonstrated via a pixelated prototype image sensor. It is believed that this new OPD platform opens up the possibility for the ultrahigh-sensitivity organic image sensors, while maintaining the advantageous properties of organics.

Synergetic contribution of fluorinated azide for high EQE and operational stability of top-illuminated, semitransparent, photomultiplication-type organic photodiodes

In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing the morphology consisting of matrix polymer/localized acceptor but also stabilize the trapped electron states such that the photomultiplication mechanism can be accelerated further, leading to exceptionally high external quantum efficiency (EQE). The consequent semitransparent OPD consisting of molybdenum oxide (MoO₃)/Au/MoO₃/photoactive layer/polyethyleneimine ethoxylated/indium tin oxide (ITO) rendered a maximum EQE of over 500 000% and 370 000% under bottom and top illumination, respectively. Owing to the remarkably high EQE, high specific detectivity of 5.6 × 10¹³ Jones and low noise-equivalent power of 5.35 × 10^-15 W Hz^-0.5 were also demonstrated. Furthermore, the OPD demonstrated stable performance during 20 h of continuous operation and minimal performance degradation even after the damp heat test. To fully visualize the advantages of the proposed high-EQE, top-illuminated, semitransparent OPD with spectral asymmetry between absorption and detection, a reflection-type fingerprint platform consisting of 1 OPD-1 oxide field-effect transistor complementary metal-oxide-semiconductor backplane (300 ppi) is designed and fabricated. The successful recognition of the fingerprint of one of the authors is demonstrated, which indicates the feasibility of the proposed PM-OPD for sensing weak light intensity.

Recent Progress of Organic Photovoltaics with Efficiency over 17%

The power conversion efficiency (PCE) of organic photovoltaics (OPVs) has exceeded 18% with narrow bandgap, non-fullerene materials Y6 or its derivatives when used as an electron acceptor. The PCE improvement of OPVs is due to strong photon harvesting in near-infrared light range and low energy loss. Meanwhile, ternary strategy is commonly recognized as a convenient and efficient means to improve the PCE of OPVs. In this review article, typical donor and acceptor materials in prepared efficient OPVs are summarized. From the device engineering perspective, the typical research work on ternary strategy and tandem structure is introduced for understanding the device design and materials selection for preparing efficient OPVs.

Effective film surface treatment for improving external quantum efficiency of photomultiplication type organic photodetector

A simple yet effective method based on methanol treatment is proposed to enhance the external quantum efficiency (EQE) of the photomultiplication type organic photodetector with a structure of Glass/ITO/PEDOT:PSS/P3H:PC71BM (100:1, wt./wt.)/Al. By modifying the PEDOT:PSS film surface with methanol, the EQE of photodetector significantly improved within a broad wavelength range of 300–700 nm. The maximum EQE of 25300% occurs at the wavelength of 350 nm in the methanol-treated device under −9 V bias, which more than doubles that (11500%) of the device without treatment. In addition, as a result of the methanol treatment, the detectivity of the device improved from 3.72 × 1012 to 7.24 × 1012 Jones at −9 V under 350 nm light illumination. The large improvement is attributed to the fact that the methanol treatment can improve the electrical performance of the PEDOT:PSS by removing the insulator PSS within the film and also result in PC71BM aggregations in the active layer. The latter can enhance the tunneling hole injection by the intensified energy-level bending, which is induced by both the trapped electrons in these aggregations and accumulated ones near Al electrode. As a result, the modification of both the PEDOT:PSS layer and the active layer increases the response current, resulting in the EQE improvement.

Smart Strategy: Transparent Hole-Transporting Polymer as a Regulator to Optimize Photomultiplication-type Polymer Photodetectors

Photomultiplication-type polymer photodetectors (PM-PPDs) were fabricated with hole-only transport active layers containing polymer(s): [6,6]-phenylC61-butyric acid methyl ester (PC₆₁BM) with a weight ratio of 100:2. The rather less PC₆₁BM content in active layers prefers to generate a large amount of isolated electron traps surrounded by polymers. Photogenerated electrons prefer to be trapped by the isolated PC₆₁BM due to the lack of continuous electron-transport channels. The trapped electrons by the isolated PC₆₁BM close to the Al electrode would like to seduce hole tunneling injection. The transparent polymer poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD) was incorporated as a regulator to improve hole mobility (μ_h) and adjust the trapped-electron distribution in active layers, leading to the enhanced performance of PM-PPDs. The optimal PM-PPDs were achieved using poly(3-hexylthiophene) (P3HT):poly-TPD:PC₆₁BM (80:20:2, wt/wt/wt) as active layers. External quantum efficiency (EQE) values at 620 nm are 3900 and 1250% for PM-PPDs based on P3HT:poly-TPD:PC₆₁BM (80:20:2, wt/wt/wt) and P3HT:PC₆₁BM (100:2, wt/wt) under -10 V applied voltage, respectively. The EQE at 620 nm of optimal PM-PPDs is improved from 650 to 63,000% along with the applied voltage increase from -5 to -20 V. This work provides a new strategy of using transparent polymer with large μ_h as a regulator for EQE and response speed improvement, as well as the flattened EQE spectral shape of PM-PPDs.

Ultra-Narrow-Band NIR Photomultiplication Organic Photodetectors Based on Charge Injection Narrowing

Ultra-narrow-band NIR photomultiplication organic photodetectors (PM-OPDs) were realized in ITO/PEDOT:PSS/active layers/Al based on an interfacial-trap-induced charge injection narrowing (CIN) concept. The rather less Bod Ethex-Hex (BEH) is imbedded in a polymer donor matrix to form large amounts of isolated electron traps. Trapped electrons in BEH close to an Al electrode will enforce hole-tunneling injection induced by interfacial band bending, resulting in a photomultiplication phenomenon. PM-OPDs with P3HT:BEH as the active layer exhibit a narrow response peak at 850 nm with a full-width at half-maximum (fwhm) of 27 nm as well as a rather weak response from 650 to 800 nm. The EQE of 29 700% at 850 nm was achieved in PM-OPDs by incorporating 0.02 wt % of F₆TCNNQ under -13 V of applied voltage. The rejection ratio (RR) of the optimized PM-OPDs with F₆TCNNQ is 11 for EQE_850 nm/EQE_700 nm and 10 for EQE_850 nm/EQE_750 nm, respectively. An EQE of 15 300% at 850 nm was achieved in the ternary PM-OPDs under -13 V of applied voltage, with markedly enhanced RRs of 44 for EQE_850 nm/EQE_700 nm and 30 for EQE_850 nm/EQE_750 nm.

High-Performance and Self-Powered Alternating Current Ultraviolet Photodetector for Digital Communication

Self-powered ultraviolet photodetectors offer great potential in the field of optical communication, smart security, space exploration, and others; however, achieving high sensitivity with maintaining fast response speed has remained a daunting challenge. Here, we develop a titanium dioxide-based self-powered ultraviolet photodetector with high detectivity (≈1.8 × 10¹⁰ jones) and a good photoresponsivity of 0.32 mA W^-1 under pulsed illumination (λ = 365 nm, 4 mW cm^-2), which demonstrate an enhancement of 114 and 2017%, respectively, due to the alternating current photovoltaic effect compared to the conventional direct current photovoltaic effect. Further, the photodetector demonstrated a high on/off ratio (≈10³), an ultrafast rise/decay time of 112/63 μs, and a noise equivalent power of 5.01 × 10^-11 W/Hz^1/2 under self-biased conditions. Photoconductive atomic force microscopy revealed the nanoscale charge transport and offered the possibility to scale down the device size to a sub-10-nanometer (∼35 nm). Moreover, as one of the practical applications, the device was successfully utilized to interpret the digital codes. The presented results enlighten a new path to design energy-efficient ultrafast photodetectors not only for the application of optical communication but also for other advanced optoelectronic applications such as digital display, sensing, and others.

High-performance broadband photodetectors based on all-inorganic perovskite CsPb(Br/I)3 nanocrystal/CdS-microwire heterostructures

High-performance broadband photodetectors that can operate at UV, visible, and near-infrared wavelengths have been fabricated based on CsPb(Br/I)₃ nanocrystal (NC)/CdS-microwire (MW) heterostructures. Under an incident light illumination of 365, 530, and 660 nm, the CsPb(Br/I)₃-NC/CdS-MW-heterostructure-based photodetector exhibited a superior photosensitivity and broader spectral response than those of a bare-CdS-MW-based photodetector, which can be attributed to the light-trapping ability of the CsPb(Br/I)₃ NCs and charge-transfer efficiency at the CsPb(Br/I)₃-NC/CdS-MW-heterojunction interface. The photodetector based on the CsPb(Br/I)₃ NC/CdS-MW heterostructure also exhibited a good response to near-infrared light (760 and 810 nm) because the produced heterojunction facilitates the spatial separation of the photogenerated carriers, and the carriers are transferred from the CsPb(Br/I)₃ NC part to the CdS MW part through diffusion due to the relatively long diffusion length in the CsPb(Br/I)₃ layer. Therefore, the proposed photodetectors are promising for constructing high-performance broadband optoelectronic devices.

The high performance photodetector based on CsPb(Br/I)₃-NC/CdS-MW heterostructures showed broadband photodetection that covers UV-VIS-NIR range due to the charge transfer at the heterojunction interface and the absorption capability of CsPb(Br/I)₃.

Broadband photomultiplication organic photodetectors

Broadband photomultiplication organic photodetectors (PMOPDs) can be achieved with a double-layered active layer prepared from IEICO-4F : PBDB-T blend solutions with different weight ratios (1 : 1 or 3 : 100, wt/wt). The response range of the double-layered PMOPDs covers from 310 nm to 930 nm, determined by the photon harvesting range of the IEICO-4F : PBDB-T (1 : 1, wt/wt) layer. The IEICO-4F : PBDB-T (3 : 100, wt/wt) layer was used as a PM layer in the double-layered PMOPDs, achieving external quantum efficiency (EQE) more than 100% based on the work mechanism of trap-assisted hole tunneling injection. The trapped electrons in PBDB-T/IEICO-4F/PBDB-T near the Al electrode will makeinterfacial-band-bending to narrow the injection barrier, resulting in hole-tunneling-injection from the external circuit. The polymer PBDB-T can provide an efficient charge transport channel for the injected hole from the external circuit. The specific detectivity (D*) and responsivity (R) of the double-layered PMOPDs are 1.05 ± 0.03 × 1012 Jones and 0.94 ± 0.03 A W-1 at 810 nm under a -10 V bias, respectively.

A regioregular donor-acceptor copolymer allowing a high gain-bandwidth product to be obtained in photomultiplication-type organic photodiodes

Obtaining a photomultiplication-type organic photodiode with a high gain-bandwidth product is challenging. We show that a newly designed regioregular polymer enables the formation of a highly oriented face-on structure with a low trap density, leading to a high EQE and a fast response time. As a result, a gain-bandwidth product of over 4 × 10⁵ Hz is achieved.

Picene and PTCDI based solution processable ambipolar OFETs

Facile and efficient solution-processed bottom gate top contact organic field-effect transistor was fabricated by employing the active layer of picene (donor, D) and N,N'-di(dodecyl)-perylene-3,4,9,10-tetracarboxylic diimide (acceptor, A). Balanced hole (0.12 cm2/Vs) and electron (0.10 cm2/Vs) mobility with Ion/off of 104 ratio were obtained for 1:1 ratio of D/A blend. On increasing the ratio of either D or A, the charge carrier mobility and Ion/off ratio improved than that of the pristine molecules. Maximum hole (µmax,h) and electron mobilities (µmax,e) were achieved up to 0.44 cm2/Vs for 3:1 and 0.25 cm2/Vs for 1:3, (D/A) respectively. This improvement is due to the donor phase function as the trap center for minority holes and decreased trap density of the dielectric layer, and vice versa. High ionization potential (- 5.71 eV) of 3:1 and lower electron affinity of (- 3.09 eV) of 1:3 supports the fine tuning of frontier molecular orbitals in the blend. The additional peak formed for the blends at high negative potential of - 1.3 V in cyclic voltammetry supports the molecular level electronic interactions of D and A. Thermal studies supported the high thermal stability of D/A blends and SEM analysis of thin films indicated their efficient molecular packing. Quasi-π-π stacking owing to the large π conjugated plane and the crystallinity of the films are well proved by GIXRD. DFT calculations also supported the electronic distribution of the molecules. The electron density of states (DOS) of pristine D and A molecules specifies the non-negligible interaction coupling among the molecules. This D/A pair has unlimited prospective for plentiful electronic applications in non-volatile memory devices, inverters and logic circuits.

Panchromatically Responsive Organic Photodiodes utilizing a Noninvasive Narrowband Color Electrode

Organic photodiodes (OPDs) are emerging as potential candidates in image sensors owing to their high sensitivity and submicron photoactive layer thickness. For OPDs to be more competitive, it is necessary to develop an economical fabrication process and improve their narrowband spectral response from visible to near-infrared (NIR). In this study, panchromatic OPDs with a remarkable narrowband response from visible to NIR are developed by integrating a solution-processed optical filter-electrode (OF-electrode) and a panchromatic organic photoactive layer. Solution-processable TiO₂ nanoparticles (sTNPs) bound to an acetylacetone ligand are used to construct the OF-electrode, which had the structure Ag/sTNP/Ag, and a ternary blend of a polymer donor, a nonfullerene acceptor, and a fullerene acceptor is used for preparing the panchromatic organic photoactive layer. Direct integration of the OF-electrode with the organic photoactive layer eliminates the need for additional OF installation, without damaging the underlying organic photoactive layer. Variation of the sTNP layer thickness controls the color filtering wavelength to vary from visible to NIR, with exceptionally narrow full width at half-maximum (fwhm) values of 48-82 nm and transparency values of 50-70%. Owing to their selective response for the desired color and their capability to minimize noise from other colors, the OPDs exhibit high sensitivity values of 2.82 × 10¹², 3.02 × 10¹², and 3.94 × 10¹² cm Hz^0.5/W (Jones) with narrow fwhm values of 110, 91, and 75 nm at a peak transmittance exceeding 65% for blue, green, and red, respectively. Furthermore, they detect NIR light at a wavelength of 950 nm with a narrow fwhm value of 51 nm and a high sensitivity of 3.78 × 10¹² cm Hz^0.5/W (Jones).

Flexible SnSe Photodetectors with Ultrabroad Spectral Response up to 10.6 μm Enabled by Photobolometric Effect

A broad spectral response is highly desirable for radiation detection in modern optoelectronics; however, it still remains a great challenge. Herein, we report a novel ultrabroadband photodetector based on a high-quality tin monoselenide (SnSe) thin film, which is even capable of detecting photons with energies far below its optical band gap. The wafer-size SnSe ultrathin films are epitaxially grown on sodium chloride via the 45° in-plane rotation by employing a sputtering method. The photodetector delivers sensitive detection to ultraviolet-visible-near infrared (UV-Vis-NIR) lights in the photoconductive mode and shows an anomalous response to long-wavelength infrared at room temperature. Under the mid-infrared light of 10.6 μm, the fabricated photodetector exhibits a large photoresponsivity of 0.16 A W^-1 with a fast response rate, which is ∼3 orders of magnitude higher than other results. The thermally induced carriers from the photobolometric effect are responsible for the sub-bandgap response. This mechanism is confirmed by a temperature coefficient of resistance of -2.3 to 4.4% K^-1 in the film, which is comparable to that of the commercial bolometric detectors. Additionally, the flexible device transferred onto polymer templates further displays high mechanical durability and stability over 200 bending cycles, indicating great potential toward developing wearable optoelectronic devices.

Physical vapor deposited organic ferroelectric diisopropylammonium bromide film and its self-powered photodetector characteristics

Organic diisopropylammonium bromide (DIPAB) is a promising material with superior ferroelectric characteristics. However, the DIPAB continuous film, which is essential to explore its application potential, is challenging because its crystallization kinetics favors island-like microcrystalline growth. In this work, the continuous and uniform deposition of organic ferroelectric DIPAB film on a single crystalline Si(100) substrate is demonstrated by a thermal evaporation process. Structural and optical studies reveal that the film is c-axis oriented with an optical bandgap of 3.52 eV. The topographic image displays well-connected grain-like surface morphology with ∼2 nm roughness. The ferroelectric domain studies illustrate the in-plane orientation of the domains, which is in accordance with c-axis oriented film where polarization is along the in-plane b-axis. The phase and amplitude responses of the domains display hysteresis and butterfly characteristics, respectively and thereby endorse the ferroelectric nature of the film. Importantly, it is demonstrated that the DIPAB film exhibits remarkable self-powered UV-Vis photodetector characteristics with responsivity of 0.66 mA W^-1 and detectivity of 2.20 × 10⁹ Jones at 11.45 mW cm^-2 light intensity. The fabricated DIPAB film reported in this work can widen its application potential in self-powered photodetector and other optoelectronic devices.

Sensitive and Stable Tin-Lead Hybrid Perovskite Photodetectors Enabled by Double-Sided Surface Passivation for Infrared Upconversion Detection

Tin(Sn)-based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn²⁺ is easily oxidized to Sn⁴⁺ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double-sided interface engineering is proposed, that is, Sn-Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn-Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300-1050 nm, a low dark current density of 1.25 × 10^-3 mA cm^-2 at -0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn-Pb broadband photodetectors are integrated in an infrared up-conversion system, converting near-infrared light into visible light. It is believed that a double-sided passivation method can provide new strategies to achieving high-performance perovskite photodetectors.

Transparent, flexible MAPbI3 perovskite microwire arrays passivated with ultra-hydrophobic supramolecular self-assembly for stable and high-performance photodetectors

The emergence of organic-inorganic hybrid perovskites (OHPs) has revolutionised the potential performance of optoelectronic devices; most perovskites are opaque and hence incompatible with transparent optoelectronics and sensitive to environmental degradation. Here, we have reported a single-step fabrication of ultra-long MAPbI₃ perovskite microwire arrays over a large area using stencil lithography based on sequential vacuum sublimation. The environmental stability of MAPbI₃ is empowered with a newly designed and synthesized transparent supramolecular self-assembly based on a mixture of two tripodal l-Phe-C₁₁H₂₃/C₇F₁₅ molecules, which showed a contact angle of 105° and served as ultra-hydrophobic passivation layers for more than 45 days in an ambient atmosphere. The MAPbI₃ microwire arrays passivated with the supramolecular self-assembly demonstrated for the first time both excellent transparency of ∼89% at 550 nm and a remarkable photoresponse with a photo-switching ratio of ∼10⁴, responsivity of 789 A W^-1, detectivity of 10¹⁴ Jones, linear dynamic range of ∼122 dB, and rise time of 432 μs. Furthermore, the photodetector fabricated on a flexible PET substrate demonstrated robust mechanical flexibility even beyond 1200 bending cycles. Therefore, the scalable stencil lithography and supramolecular passivation approaches have the potential to deliver next-generation transparent, flexible, and stable optoelectronic devices.

Ultra High-efficiency Integrated Mid Infrared to Visible Up-conversion System

In this paper, we have introduced and investigated an integrated optoelectronic chip for the up-conversion of mid-infrared to visible light. A thin layer of the nanocrystalline photoconductive PbSe is put on the Base of the NPN bipolar junction transistor and a doped phosphorescence organic light-emitting diode is placed on the Collector contacts. The incoming mid-infrared light is converted into an electric current by quantum dot photodetector, then amplified by the NPN bipolar junction transistor, and finally, the amplified current is driven through the Collector in the organic light-emitting diode. The organic light-emitting diode is designed to emit a green color. Our findings indicated that the proposed devices provide an up-conversion process from mid-infrared to visible light with a high-efficiency rate. The quantum dot photodetector is designed to detect 3 μm and also the organic light-emitting diode works at 523 nm. It is easy to tune the 3 ~ 5 μm incoming light by tuning the PbSe quantum dots, and the output light is tuned by tuning the organic light-emitting diode structure. Thus, the proposed structure is highly flexible regarding receiving mid-infrared and generating visible light. It is concluded that the external quantum efficiency for the proposed structure for 3 μm to 523 nm is 600. Also, the enhancement of the transistor current gain (β) can further increase the conversion efficiency of the proposed device. Moreover, different structures such as Darlington can be used instead of the bipolar junction transistor to enhance conversion efficiency.

Alloy-like ternary polymer solar cells with over 17.2% efficiency

Ternary strategy has been considered as an efficient method to achieve high performance polymer solar cells (PSCs). A power conversion efficiency (PCE) of 17.22% is achieved in the optimized ternary PSCs with 10 wt% MF1 in acceptors. The over 8% PCE improvement by employing ternary strategy is attributed to the simultaneously increased J_SC of 25.68 mA cm^-2, V_OC of 0.853 V and FF of 78.61% compared with Y6 based binary PSCs. The good compatibility of MF1 and Y6 can be confirmed from Raman mapping, contact angle, cyclic voltammetry and morphology, which is the prerequisite to form alloy-like state. Electron mobility in ternary active layers strongly depends on MF1 content in acceptors due to the different lowest unoccupied molecular orbital (LUMO) levels of Y6 and MF1, which can well explain the wave-like varied FF of ternary PSCs. The third-party certified PCE of 16.8% should be one of the highest values for single bulk heterojunction PSCs. This work provides sufficient references for selecting materials to achieve efficient ternary PSCs.

Over 15.7% Efficiency of Ternary Organic Solar Cells by Employing Two Compatible Acceptors with Similar LUMO Levels

Efficient organic solar cells (OSCs) are fabricated using polymer PM6 as donor, and IPTBO-4Cl and MF1 as acceptors. The power conversion efficiency (PCE) of IPTBO-4Cl based and MF1 based binary OSCs individually arrive to 14.94% and 12.07%, exhibiting markedly different short circuit current density (J_SC ) of 23.18 mA cm^-2 versus 17.01 mA cm^-2 , fill factor (FF) of 72.17% versus 78.18% and similar open circuit voltage (V_OC ) of 0.893 V versus 0.908 V. The two acceptors, IPTBO-4Cl and MF1, have similar lowest unoccupied molecular orbital levels, which is beneficial for efficient electron transport in the ternary active layer. The PCE of optimized ternary OSCs arrives to 15.74% by incorporating 30 wt% MF1 in acceptors, resulting from the simultaneously increased J_SC of 23.20 mA cm^-2 , V_OC of 0.897 V, and FF of 75.64% in comparison with IPTBO-4Cl based binary OSCs. The gradually increased FFs of ternary OSCs indicate the well-optimized phase separation and molecular arrangement with MF1 as morphology regulator. This work may provide a new viewpoint for selecting an appropriate third component to achieve efficient ternary OSCs from materials and photovoltaic parameters of two binary OSCs.

Recent Progress in Organic Photodetectors and their Applications

Organic photodetectors (OPDs) have attracted continuous attention due to their outstanding advantages, such as tunability of detecting wavelength, low-cost manufacturing, compatibility with lightweight and flexible devices, as well as ease of processing. Enormous efforts on performance improvement and application of OPDs have been devoted in the past decades. In this Review, recent advances in device architectures and operation mechanisms of phototransistor, photoconductor, and photodiode based OPDs are reviewed with a focus on the strategies aiming at performance improvement. The application of OPDs in spectrally selective detection, wearable devices, and integrated optoelectronics are also discussed. Furthermore, some future prospects on the research challenges and new opportunities of OPDs are covered.