High Dielectric Constant Semiconducting Poly(3-alkylthiophene)s from Side Chain Modification with Polar Sulfinyl and Sulfonyl Groups

Engineering the Dielectric Constants of Polymers: From Molecular to Mesoscopic Scales

Polymers are essential components of modern-day materials and are widely used in various fields. The dielectric constant, a key physical parameter, plays a fundamental role in the light-, electricity-, and magnetism-related applications of polymers, such as dielectric and electrical insulation, battery and photovoltaic fabrication, sensing and electrical contact, and signal transmission and communication. Over the past few decades, numerous efforts have been devoted to engineering the intrinsic dielectric constant of polymers, particularly by tailoring the induced and orientational polarization modes and ferroelectric domain engineering. Investigations into these methods have guided the rational design and on-demand preparation of polymers with desired dielectric constants. This review article exhaustively summarizes the dielectric constant engineering of polymers from molecular to mesoscopic scales, with emphasis on application-driven design and on-demand polymer synthesis rooted in polymer chemistry principles. Additionally, it explores the key polymer applications that can benefit from dielectric constant regulation and outlines the future prospects of this field.

Carrier Screening Controls Transport in Conjugated Polymers at High Doping Concentrations

Transport properties of doped conjugated polymers (CPs) have been widely analyzed with the Gaussian disorder model (GDM) in conjunction with hopping transport between localized states. These models reveal that even in highly doped CPs, a majority of carriers are still localized because dielectric permittivity of CPs is well below that of inorganic materials, making Coulomb interactions between carriers and dopant counterions much more pronounced. However, previous studies within the GDM did not consider the role of screening the dielectric interactions by carriers. Here we implement carrier screening in the Debye-Hückel formalism in our calculations of dopant-induced energetic disorder, which modifies the Gaussian density of states (DOS). Then we solve the Pauli master equation using Miller-Abrahams hopping rates with states from the resulting screened DOS to obtain conductivity and Seebeck coefficient across a broad range of carrier concentrations and compare them to measurements. Our results show that screening has significant impact on the shape of the DOS and consequently on carrier transport, particularly at high doping. We prove that the slope of Seebeck coefficient versus electric conductivity, which was previously thought to be universal, is impacted by screening and decreases for systems with small dopant-carrier separation, explaining our measurements. We also show that thermoelectric power factor is underestimated by a factor of ∼10 at higher doping concentrations if screening is neglected. We conclude that carrier screening plays a crucial role in curtailing dopant-induced energetic disorder, particularly at high carrier concentrations.

Does the Traditional Band Picture Describe the Electronic Structure of Doped Conjugated Polymers? TD-DFT and Natural Transition Orbital Study of Doped P3HT

Polarons and bipolarons are created when one or two electrons are removed from the π-system of a p-type conjugated polymer, respectively. In the traditional band picture, the creation of a polaron causes two electronic energy levels to move into the band gap. The removal of a second electron to form a bipolaron causes the two intragap states to move further into the gap. Several groups, however, who looked at the energies of the Kohn-Sham orbitals from DFT calculations, have recently argued that the traditional band picture is incorrect for explaining the spectroscopy of doped conjugated polymers. Instead, the DFT calculations suggest that polaron creation causes only one unoccupied state to move into the band gap near the valence band edge while half-filled state in the valence band and the conduction band bend downward in energy. To understand the discrepancy, we performed TD-DFT calculations of polarons and bipolarons on poly(3-hexylthiophene) (P3HT). Not only do the TD-DFT-calculated absorption spectra match the experimental absorption spectra, but an analysis using natural transitional orbitals (NTOs), which provides an approximate one-electron picture from the many-electron TD-DFT results, supports the traditional band picture. Our TD-DFT/NTO analysis indicates that the traditional band picture also works for bipolarons, a system for which DFT calculations were unable to determine the electronic structure.

Electrode Doping and Dielectric Effect in Hole Injection into Organic Semiconductors through High Work-Function Oxides

High work-function metal oxides are common for enhancing hole injection into organic semiconductors. However, the current understanding of the electrostatic mechanism needs to be more consistent with materials' electronic properties. Here, we study the electrostatic profile of high work-function oxides by considering their dielectricity and energetic disorder. Using MoO₃ as an example, we first show that the significant vacuum-level change at the electrode-oxide interface originates from electrode doping rather than the conventionally assumed interface dipole. Moreover, electrode doping is enough to explain the Fermi-level shift, so MoO₃'s characteristic n-type property is not necessarily due to intrinsic donors. This conclusion also applies to the n-type oxides with reduced work functions, like WO₃, V₂O₅, and p-type NiO. Finally, the dielectricity of the oxide, either n-type or p-type, reduces the surface p-doping of the further deposited organic layer. Increasing the oxide's metallicity and energetic disorder facilitates the hole injection.

Charge Transport Across Au-P3HT-Graphene van der Waals Vertical Heterostructures

Hybrid van der Waals heterostructures based on 2D materials and/or organic thin films are being evaluated as potential functional devices for a variety of applications. In this context, the graphene/organic semiconductor (Gr/OSC) heterostructure could represent the core element to build future vertical organic transistors based on two back-to-back Gr/OSC diodes sharing a common graphene sheet, which functions as the base electrode. However, the assessment of the Gr/OSC potential still requires a deeper understanding of the charge carrier transport across the interface as well as the development of wafer-scale fabrication methods. This work investigates the charge injection and transport across Au/OSC/Gr vertical heterostructures, focusing on poly(3-hexylthiophen-2,5-diyl) as the OSC, where the PMMA-free graphene layer functions as the top electrode. The structures are fabricated using a combination of processes widely exploited in semiconductor manufacturing and therefore are suited for industrial upscaling. Temperature-dependent current-voltage measurements and impedance spectroscopy show that the charge transport across both device interfaces is injection-limited by thermionic emission at high bias, while it is space charge limited at low bias, and that the P3HT can be assumed fully depleted in the high bias regime. From the space charge limited model, the out-of-plane charge carrier mobility in P3HT is found to be equal to μ ≈ 2.8 × 10^-4 cm² V^-1 s^-1, similar to the in-plane mobility reported in previous works, while the charge carrier density is N₀ ≈ 1.16 × 10¹⁵ cm^-3, also in agreement with previously reported values. From the thermionic emission model, the energy barriers at the Gr/P3HT and Au/P3HT interfaces result in 0.30 eV and 0.25 eV, respectively. Based on the measured barriers heights, the energy band diagram of the vertical heterostructure is proposed under the hypothesis that P3HT is fully depleted.

Progress on Polymer Dielectrics for Electrostatic Capacitors Application

Polymer dielectrics are attracting increasing attention for electrical energy storage owing to their advantages of mechanical flexibility, corrosion resistance, facile processability, light weight, great reliability, and high operating voltages. However, the dielectric constants of most dielectric polymers are less than 10, which results in low energy densities and limits their applications in electrostatic capacitors for advanced electronics and electrical power systems. Therefore, intensive efforts have been placed on the development of high-energy-density polymer dielectrics. In this perspective, the most recent results on the all-organic polymer dielectrics are summarized, including molecular structure design, polymer blends, and layered structured polymers. The challenges in the field and suggestions for future research on high-energy-density polymer dielectrics are also presented.

Wide Bandgap Polymer Donor with Acrylate Side Chains for Non-Fullerene Acceptor-based Organic Solar Cells

Organic semiconductors inherently have a low dielectric constant and hence high exciton binding energy, which is largely responsible for the rather low power conversion efficiency of organic solar cells as well as the requirements to achieve delicate bulk-heterojunction nanophase separation in the active layer. In this study, we use methyl acrylate as a weakly electron-withdrawing side chain for the electron rich thiophene to prepare a new building block, methyl thiophene-3-acrylate (TA), with increased polarity. A wide bandgap polymer PBDT-TA synthesized using TA and a benzodithiophene (BDT) monomer shows increased dielectric constant and reduced exciton binding energy compared to the analogous polymer PBDT-TC, which is made of BDT and methyl thiophene-3-carboxylate (TC). An organic solar cell device based on PBDT-TA:ITIC also achieves a higher power conversion efficiency of 10.47% than that of the PBDT-TC:ITIC based solar cell (9.68%). This work demonstrates the effectiveness of using acrylate side chains to increase the dielectric constant, reduce the exciton binding energy, and enhance the solar cell efficiency of polymer semiconductors. This article is protected by copyright. All rights reserved.

Cross-Scale Synthesis of Organic High-k Semiconductors Based on Spiro-Gridized Nanopolymers

High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piezoelectric, pyroelectric, and ferroelectric effects but also photoelectric conversion efficiency in OPVs, carrier mobility in OFETs, and charge density in charge-trapping memories. Herein, we report an ultralong persistence length (l _p ≈ 41 nm) effect of spiro-fused organic nanopolymers on dielectric properties, together with excitonic and charge carrier behaviors. The state-of-the-art nanopolymers, namely, nanopolyspirogrids (NPSGs), are synthesized via the simple cross-scale Friedel-Crafts polygridization of A₂B₂-type nanomonomers. The high dielectric constant (k = 8.43) of NPSG is firstly achieved by locking spiro-polygridization effect that results in the enhancement of dipole polarization. When doping into a polystyrene-based dielectric layer, such a high-k feature of NPSG increases the field-effect carrier mobility from 0.20 to 0.90 cm² V^-1 s^-1 in pentacene OFET devices. Meanwhile, amorphous NPSG film exhibits an ultralow energy disorder (<50 meV) for an excellent zero-field hole mobility of 3.94 × 10^-3 cm² V^-1 s^-1, surpassing most of the amorphous π-conjugated polymers. Organic nanopolymers with high dielectric constants open a new way to break through the bottleneck of efficiency and multifunctionality in the blueprint of the fourth-generation semiconductors.

Raising Dielectric Permittivity Mitigates Dopant-Induced Disorder in Conjugated Polymers

Conjugated polymers need to be doped to increase charge carrier density and reach the electrical conductivity necessary for electronic and energy applications. While doping increases carrier density, Coulomb interactions between the dopant molecules and the localized carriers are poorly screened, causing broadening and a heavy tail in the electronic density-of-states (DOS). The authors examine the effects of dopant-induced disorder on two complimentary charge transport properties of semiconducting polymers, the Seebeck coefficient and electrical conductivity, and demonstrate a way to mitigate them. Their simulations, based on a modified Gaussian disorder model with Miller-Abrahams hopping rates, show that dopant-induced broadening of the DOS negatively impacts the Seebeck coefficient versus electrical conductivity trade-off curve. Increasing the dielectric permittivity of the polymer mitigates dopant-carrier Coulomb interactions and improves charge transport, evidenced by simultaneous increases in conductivity and the Seebeck coefficient. They verified this increase experimentally in iodine-doped P3HT and P3HT blended with barium titanate (BaTiO3 ) nanoparticles. The addition of 2% w/w BaTiO3 nanoparticles increased conductivity and Seebeck across a broad range of doping, resulting in a fourfold increase in power factor. Thus, these results show a promising path forward to reduce the dopant-charge carrier Coulomb interactions and mitigate their adverse impact on charge transport.

Molecular Weight Enables Fine-Tuning the Thermal and Dielectric Properties of Polymethacrylates Bearing Sulfonyl and Nitrile Groups as Dipolar Entities

In this work, polymethacrylates containing sulfonyl and nitrile functional groups were successfully prepared by conventional radical polymerization and reversible addition-fragmentation chain-transfer polymerization (RAFT). The thermal and dielectric properties were evaluated, for the first time, considering differences in their molecular weights and dispersity values. Variations of the aforementioned properties do not seem to substantially affect the polarized state of these materials, defined in terms of the parameters ε'_r, ε"_r and tan (δ). However, the earlier appearance of dissipative phenomena on the temperature scale for materials with lower molecular weights or broader molecular weight distributions, narrows the range of working temperatures in which they exhibit high dielectric constants along with low loss factors. Notwithstanding the above, as all polymers showed, at room temperature, ε'_r values above 9 and loss factors below 0.02, presenting higher dielectric performance when compared to conventional polymer materials, they could be considered as good candidates for energy storage applications.

Designing Alternative Non-Fullerene Molecular Electron Acceptors for Solution-Processable Organic Photovoltaics

Until recently, solution-processable organic photovoltaics (OPVs) mainly relied on fullerene derivatives as the n-type material, paired with a p-type conjugated polymer. However, fullerene derivatives have disadvantages that limit OPV performance, thus fueling research of non-fullerene acceptors (NFAs). Initially, NFAs showed poor performance due to difficulties in obtaining favorable blend morphologies. One example is our work with 2,6-dialkylamino core-substituted naphthalene diimides. Researchers then learned to control blend morphology by NFA molecular design. To limit miscibility with polymer while preventing excessive self-aggregation, non-planar, twisted or 3D structures were reported. An example of a 3D structure is our work with homoleptic zinc(II) complexes of azadipyrromethene. The most recent design is a planar A-D-A conjugated system where the D unit is rigid and has orthogonal side chains to control aggregation. These have propelled power conversion efficiencies (PCEs) to ∼14 %, surpassing fullerene-based OPVs. These exciting new developments prompt further investigations of NFAs and provide a bright future for OPVs.