Ultrabroadband, Ultraviolet to Terahertz, and High Sensitivity CH3NH3PbI3 Perovskite Photodetectors

Working Voltage Switching the Photo-/Thermo-Electric Effect for Distinct Ultraviolet and Infrared Signal Detection

The combination of sensing invisible ultraviolet photons and infrared radiation can significantly enhance target recognition by offsetting their own limit in a short sensing range and poor spatial resolution. However, the difference in their wavelength sets unique requirements for sensing materials and devices, which makes it hard to establish their implementation in a single detector. In this work, we present the design of a single detector with CH3NH3PbCl3 (MAPbCl3) for distinguishing ultraviolet and IR signals by switching its operating mode in the photo-/thermo-electric effect. The large optical band gap of ∼3.2 eV in MAPbCl3 ensures the response toward an ultraviolet photon, while its efficient thermoelectric effect allows the sensing of an IR signal. As a result, the detector exhibits a specific detectivity of 4.5 × 1012 Jones for 395 nm ultraviolet photons under 0 V, while under the working voltage of 2.5 V, it demonstrates a superior temperature coefficient of resistance of -3.7% K-1, a specific detectivity of 4.8 × 108 Jones, and a limit of detection of 0.58 mW/cm2 for 4 μm photons. The functionality of the switching response to ultraviolet or IR photons by working voltage allows background subtraction and enhances the target discrimination in the imaging.

Enhanced Responsivity and Photostability of Cs3Bi2I9-Based Self-Powered Photodetector via Chemical Vapor Deposition Engineering

Lead-based halide perovskites have gained significant prominence in recent years in optoelectronics and photovoltaics, owing to their exceptional optoelectronic properties. Nonetheless, the toxicity of lead (Pb) and the stability concern pose obstacles to their potential for future large-scale market development. Herein, stable lead-free Cs3Bi2I9 (CBI) films are presented with smooth and compact morphologies synthesized via chemical vapor deposition (CVD), demonstrating their application as an UV photodetector in a self-powered way. The self-powered photodetectors (SPDs) exhibit remarkable characteristics, including a responsivity of 1.57 A W-1 and an impressive specific detectivity of 3.38 × 1013 Jones under the illumination of 365 nm at zero bias. Furthermore, the SPDs exhibit a nominal decline (≈2.2%) in the photocurrent under constant illumination over 500 h, highlighting its impressive long-term operational stability. Finally, the real-time UV-detection capability of the device is demonstrated by measuring the photocurrent under various conditions, including room light and sunlight at different times. These findings offer a new platform for synthesizing stable and high-quality perovskite films, and SPDs for advancing the development of wearable and portable electronics.

Pyroelectric-Accelerated Perovskite Photodetector for Picosecond Light Detection and Ranging

Light detection and ranging (LiDAR) is indispensable in applications such as unmanned aerial vehicles, autonomous driving, and biomimetic robots. However, the precision and available distance of LiDAR are constrained by the speed and sensitivity of the photodetector, necessitating the use of expensive and energy-consuming avalanche diodes. To address these challenges, in this study, a pyroelectricity-based acceleration strategy with 2D-(graded 3D) perovskite heterojunction is proposed to achieve a record high speed (27.7 ns with an active area of 9 mm2, and 176 ps with an active area of 0.2 mm2) and high responsivity (0.65 A W-1) at zero bias. This success is attributed to the unique mechanism where the electrons from the pyroelectric effect at the Cl-rich 2D/3D interface directly recombine with excess holes during light-dark transitions, breaking speed limitations related to carrier mobility and capacitive effect. Furthermore, the introduced pyroelectric effect significantly enhances the photoresponse, resulting in a self-powered external quantum efficiency exceeding 100%. The study also demonstrates precise position detection at the centimeter level. In conclusion, this research presents a pioneering approach for developing high-speed photodiodes with exceptional sensitivity, mitigating energy and cost concerns in LiDAR applications.

Broadband Photodetectors and Imagers in Stretchable Electronics Packaging

The integration of flexible electronics with optics can help realize a powerful tool that facilitates the creation of a smart society wherein internal evaluations can be easily performed nondestructively from the surface of various objects that is used or encountered in daily lives. Here, organic-material-based stretchable optical sensors and imagers that possess both bending capability and rubber-like elasticity are reviewed. The latest trends in nondestructive evaluation equipment that enable simple on-site evaluations of health conditions and abnormalities are discussed without subjecting the targeted living bodies and various objects to mechanical stress. Real-time performance under real-life conditions is becoming increasingly important for creating smart societies interwoven with optical technologies. In particular, the terahertz (THz)-wave region offers a substance- and state-specific fingerprint spectrum that enables instantaneous analyses. However, to make THz sensors accessible, the following issues must be addressed: broadband and high-sensitivity at room temperature, stretchability to follow the surface movements of targets, and digital transformation compatibility. The materials, electronics packaging, and remote imaging systems used to overcome these issues are discussed in detail. Ultimately, stretchable optical sensors and imagers with highly sensitive and broadband THz sensors can facilitate the multifaceted on-site evaluation of solids, liquids, and gases.

Negative Photoconductivity of Fe3GeTe2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection

Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.

Recent Advances in Broadband Photodetectors from Infrared to Terahertz

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.

Ultraviolet-Visible-Short-Wavelength Infrared Broadband and Fast-Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Perovskite-based photodetectors exhibit potential applications in communication, neuromorphic chips, and biomedical imaging due to their outstanding photoelectric properties and facile manufacturability. However, few of perovskite-based photodetectors focus on ultraviolet-visible-short-wavelength infrared (UV-Vis-SWIR) broadband photodetection because of the relatively large bandgap. Moreover, such broadband photodetectors with individual nanocrystal channel featuring monolithic integration with functional electronic/optical components have hardly been explored. Herein, an individual monocrystalline MAPbBr3 nanoplate-based photodetector is demonstrated that simultaneously achieves efficient UV-Vis-SWIR detection and fast-response. Nanoplate photodetectors (NPDs) are prepared by assembling single nanoplate on adjacent gold electrodes. NPDs exhibit high external quantum efficiency (EQE) and detectivity of 1200% and 5.37 × 1012 Jones, as well as fast response with rise time of 80 µs. Notably, NPDs simultaneously achieve high EQE and fast response, exceeding most perovskite devices with multi-nanocrystal channel. Benefiting from the high specific surface area of nanoplate with surface-trap-assisted absorption, NPDs achieve high performance in the near-infrared and SWIR spectral region of 850-1450 nm. Unencapsulated devices show outstanding UV-laser-irradiation endurance and decent periodicity and repeatability after 29-day-storage in atmospheric environment. Finally, imaging applications are demonstrated. This work verifies the potential of perovskite-based broadband photodetection, and stimulates the monolithic integration of various perovskite-based devices.

CH3NH3PbI3/Au/Mg0.2Zn0.8O Heterojunction Self-Powered Photodetectors with Suppressed Dark Current and Enhanced Detectivity

Interface engineering of the hole transport layer in CH₃NH₃PbI₃ photodetectors has resulted in significantly increased carrier accumulation and dark current as well as energy band mismatch, thus achieving the goal of high-power conversion efficiency. However, the reported heterojunction perovskite photodetectors exhibit high dark currents and low responsivities. Herein, heterojunction self-powered photodetectors, composed of p-type CH₃NH₃PbI₃ and n-type Mg_0.2Zn_0.8O, are prepared through the spin coating and magnetron sputtering. The obtained heterojunctions exhibit a high responsivity of 0.58 A/W, and the EQE of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is 10.23 times that of the CH₃NH₃PbI₃/Au photodetectors and 84.51 times that of the Mg_0.2ZnO_0.8/Au photodetectors. The built-in electric field of the p-n heterojunction significantly suppresses the dark current and improves the responsivity. Remarkably, in the self-supply voltage detection mode, the heterojunction achieves a high responsivity of up to 1.1 mA/W. The dark current of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is less than 1.4 × 10^-1 pA at 0 V, which is more than 10 times lower than that of the CH₃NH₃PbI₃ photodetectors. The best value of the detectivity is as high as 4.7 × 10¹² Jones. Furthermore, the heterojunction self-powered photodetectors exhibit a uniform photodetection response over a wide spectral range from 200 to 850 nm. This work provides guidance for achieving a low dark current and high detectivity for perovskite photodetectors.

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.

Quartz tuning fork-based high sensitive photodetector by co-coupling photoelectric and the thermoelastic effect of perovskite

This paper reports a new strategy for enhancing the photoresponse of a quartz tuning fork (QTF). A deposited light absorbing layer on the surface of QTF could improve the performance only to a certain extent. Herein, a novel strategy is proposed to construct a Schottky junction on the QTF. The Schottky junction presented here consists of a silver-perovskite, which has extremely high light absorption coefficient and dramatically high power conversion efficiency. The co-coupling of the perovskite's photoelectric effect and its related QTF thermoelastic effect leads to a dramatic improvement in the radiation detection performance. Experimental results indicate that the CH₃NH₃PbI₃-QTF obtains two orders of magnitude enhancement in sensitivity and SNR, and the 1σ detection limit was calculated to be 1.9 µW. It was the first time that the QTF resonance detection and perovskite Schottky junction was combined for optical detection. The presented design could be used in photoacoustic spectroscopy and thermoelastic spectroscopy for trace gas sensing.

Interfacial engineering of halide perovskites and two-dimensional materials

Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging

With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode-blocking diode (PIN-BD) crossbar array with pixel-wise rectifying property by the vapor deposition method is presented. The PIN-BD shows a large rectification ratio of 3.3 × 10² under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real-time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.

High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3 Sandwich Structure

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga₂O₃, Au electrodes, and the MAPbBr₃ perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga₂O₃/Au/MAPbBr₃ SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W^-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr₃ PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga₂O₃ and MAPbBr₃, which gives the β-Ga₂O₃/Au/MAPbBr₃ SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.

Ultraviolet-to-infrared broadband photodetector and imaging application based on a perovskite single crystal

The organic-inorganic hybrid perovskite CH₃NH₃PbBr₃(MAPbBr₃) has been well developed in the X-ray to visible light band due to its superior optoelectronic properties, but this material is rarely studied in the infrared band. In this paper, a UV-NIR broadband optical detector based on MAPbBr₃ single crystal is studied, and the response range can reach the near-infrared region. In the visible light band, the optical response of the device is mainly caused by the photoelectric effect; in the near-infrared band, the optical response of the device is mainly caused by the thermal effect. The carrier response of MAPbBr₃ material under different wavelengths of light was investigated using a non-contact measurement method (optical pump terahertz (THz) probe spectroscopy). This paper also builds a set of photoelectric sensor array components, and successfully realizes the conversion of optical image signals to electrical image signals in the visible light band and infrared band. The experimental results show that MAPbBr₃ crystals provide a new possibility for UV-NIR broadband photodetectors.

High-Performance Ultrabroadband Photodetector Based on Photothermoelectric Effect

Ultrabroadband photodetectors (PDs) working in the frequency range from the UV to THz regions of the spectrum play a crucial role in integrated multifunction photoelectric detection. Even so, a shortage of high-performance PDs has seriously restricted the overall development of this field. The present work demonstrates a high-performance, ultrabroadband PD with a composite nanostructure comprising a suspended carbon nanotube (CNT) film on which titanium and palladium are deposited. The application of titanium and palladium to the CNT film in this device provides n-doping and p-doping, respectively, and the deposited metal nanoparticles also ensure enhanced thermal localization. This device exhibits short response time, high responsivity, large linear dynamic range, and small noise equivalent power over the ultrabroadband spectrum based on a strong photothermoelectric effect. Numerical simulation results also confirm the effective doping and enhanced thermal localization in this PD resulting from the deposited metals. A theoretical analysis shows that the thermal conductivity of the composite film is no longer independent of the temperature over a wide temperature range. This work provides a simple but novel strategy for the design of high-performance ultrabroadband PDs.

Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior

Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W^-1 and high optical detectivity of 1.9 × 10¹⁰ cm Hz^1/2 W^-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.

Enhanced room-temperature terahertz detection and imaging derived from anti-reflection 2D perovskite layer on MAPbI3 single crystals

Terahertz (THz) detection technology is getting increasing attention from scientists and industries alike due to its superiority in imaging, communication, and defense. Unfortunately, the detection of THz electromagnetic waves under room temperature requires a complicated device architecture design or additional cryogenic cooling units, which increase the cost and complexity of devices, subsequently imposing an impediment in its universal application. In this work, THz detectors operated under room temperature are designed based on the thermoelectric effect with MAPbI₃ single crystals (SCs) as active layers. With solution-processed molecular growth engineering, the anti-reflection 2D perovskite layers were constructed on SCs' surfaces to suppress THz reflection loss. Simultaneously, by finely regulating the main carrier types and the direction of the applied bias across the inclined energy level, the thermoelectric effect is further promoted. As a result, THz-induced ΔT in MAPbI₃ SCs reaches 4.6 °C, while the enhancement in the bolometric and photothermoelectric effects reach ∼4.8 times and ∼16.9 times, respectively. Finally, the devices achieve responsivity of 88.8 μA W^-1 at 0.1 THz under 60 V cm^-1, noise equivalent power (NEP) less than 2.16 × 10^-9 W Hz^-1/2, and specific detectivity (D*) of 1.5 × 10⁸ Jones, which even surpasses the performance of state-of-the-art graphene-based room-temperature THz thermoelectric devices. More importantly, proof-of-concept imaging gives direct evidence of perovskite-based THz sensing in practical applications.

Reconfigurable terahertz metamaterials: From fundamental principles to advanced 6G applications

Terahertz (THz) electromagnetic spectrum ranging from 0.1THz to 10THz has become critical for sixth generation (6G) applications, such as high-speed communication, fingerprint chemical sensing, non-destructive biosensing, and bioimaging. However, the limited response of naturally existing materials THz waves has induced a gap in the electromagnetic spectrum, where a lack of THz functional devices using natural materials has occurred in this gap. Metamaterials, artificially composed structures that can engineer the electromagnetic properties to manipulate the waves, have enabled the development of many THz devices, known as "metadevices". Besides, the tunability of THz metadevices can be achieved by tunable structures using microelectromechanical system (MEMS) technologies, as well as tunable materials including phase change materials (PCMs), electro-optical materials (EOMs), and thermo-optical materials (TOMs). Leveraging various tuning mechanisms together with metamaterials, tremendous research works have demonstrated reconfigurable functional THz devices, playing an important role to fill the THz gap toward the 6G applications. This review introduces reconfigurable metadevices from fundamental principles of metamaterial resonant system to the design mechanisms of functional THz metamaterial devices and their related applications. Moreover, we provide perspectives on the future development of THz photonic devices for state-of-the-art applications.

Morphology engineering of a hybrid perovskite for active terahertz memory modulation

Morphology engineering was investigated for hybrid perovskites CH₃NH₃PbI₃:Ag/Poly(3, 4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) that were fabricated in both air and nitrogen environments for active terahertz (THz) memory modulation. Under low optical excitation or an applied bias, THz amplitude modulation or rapid restore in both CH₃NH₃PbI₃:Ag/PEDOT:PSS hybrid structures were demonstrated. The recovery time of the modulated THz wave in the sample fabricated in air was considerably longer than that of the sample fabricated in nitrogen because of defect states induced by a high degree of roughness. THz transmissions were used as coded pixel units and were programmed to store a 4×4 image or a multi-order signal. Hence, active THz memory modulation was demonstrated. It also has potential applications as a visible to near-infrared broad-spectrum light detector.

Further Advancement of Perovskite Single Crystals

Halide perovskite (HP) single crystals (SCs) are garnering extensive attention as active materials to substitute polycrystalline counterparts in solar cells, photodiodes, and photodetectors, etc. Nevertheless, the large thickness and defect-rich surface results in severe carrier recombination and becomes the major bottleneck for augmented performance. In this perspective, we are looking forward to explaining in detail why the SCs hardly unleash their engrossing potential and introduce two parallel paths for further advancement. First is the modification of thick SCs by reducing the prepared thickness or surface passivation. Second is the large thickness that is conducive to the sufficient absorption of high-energy rays with strong penetrating ability and is beneficial to the thermoelectric effect due to the ultralow thermal conductivity of HPs. These applications provide a roundabout strategy to exploit freestanding SCs with a large thickness. Herein, direct modification and application of thick SCs are systematically introduced, expecting to give rise to the prosperity of HP SCs.

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

In this study, Wadsley B phase vanadium oxide (VO₂(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO₂(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K^-1 at 40 °C, a peak specific detectivity of 6.02 × 10⁹ Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO₂(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

Boosting the Performance of Self-Powered CsPbCl3-Based UV Photodetectors by a Sequential Vapor-Deposition Strategy and Heterojunction Engineering

All-inorganic CsPbCl₃ perovskite in ultraviolet (UV) detection is drawing increasing interest owing to its UV-matchable optical band gap, ultrahigh UV stability, and superior inherent optoelectronic properties. Almost all of the reported CsPbCl₃ photodetectors employ CsPbCl₃ nano- or microstructures as sensitive components, while CsPbCl₃ polycrystalline film-based self-powered photodetectors are rarely studied on account of the terrible precursor solubility. Herein, a novel sequential vapor-deposition technique is demonstrated to fabricate CsPbCl₃ polycrystalline film for the first time. High-quality CsPbCl₃ films with excellent optical, electronic, and morphological features are obtained. A self-powered photodetector based on the CsPbCl₃ film is constructed without any charge transport layer, showing a high UV detection performance. A thin p-type PbS buffer layer is further introduced to passivate the surface defects of the CsPbCl₃ layer and decrease the interfacial energy barrier by forming a type-II heterojunction, contributing to a faster hole extraction rate and a suppressed dark current level. The best-performing device achieves an ultrafast response time of 1.92 μs, an ultrahigh on/off ratio of 2.22 × 10⁵, and a responsivity of 0.22 A/W upon 375 nm UV illumination at 0 V bias. This comprehensive performance is the best among all of the CsPbCl₃ photodetectors reported to date. The as-prepared photodetectors also present an eminent UV irradiation and long-term durability in ambient air. Furthermore, a large-area and uniform 625-pixel UV image sensor is fabricated and attains a prominent imaging capability. Our work opens a new avenue for the scalable production of CsPbCl₃-based optoelectronics.

Monolithic Tandem Multicolor Image Sensor Based on Electrochromic Color-Radix Demultiplexing

Optical data acquisition has been set as one of the milestones to testify the developments aimed at harnessing the full potential of the spatial and temporal data processing capabilities of the advanced semiconductor technology. A highly promising approach to drive the level of acquisition beyond the current technological node is the vertical integration of multiple photodetectors. However, vertical integration so far requires the same level of circuit complexity as lateral integration from the incapability of monolithic integration. Here, an electrochromic device architecture is introduced that enables realization of a monolithic tandem multicolor photodetector. The device, composed of vertically stacked p-type and n-type graphene barristors, is demonstrated to be capable of regulating the balanced charge transport under any desired illumination wavelengths. It exhibits variable anti-ambipolar charge transport behavior, which yields sensitive voltage-controlled photoconductive gain spectra. These electrical behaviors are utilized to fabricate an optoelectronic logic sensor that can demultiplex the desired color coordinate or wavelength in the constituent array with high color accuracy.

Strong Polarized Photoluminescence CsPbBr3 Nanowire Composite Films for UV Spectral Conversion Polarization Photodetector Enhancement

In this work, we proposed a fluorescence conversion layer with polarization characteristics to enhance UV polarization detection for the first time. To achieve this goal, the colloidal lead halide CsPbBr₃ nanowires (NWs) with appropriate lengths were synthesized by the method of ultrasonication synthesis assisted by the addition of hydrobromic acid (HBr) ligands. By adding HBr, the properties of synthesized NWs are improved, and due to the controllable perovskite-stretched NWs, polymer composite films were fabricated, which can generate photoluminescence (PL) with strong polarization. The optimized stretched composite film can achieve a polarization degree of 0.42 and dichroism ratio (I_∥/I_⊥) of 2.49 at 520 nm. Based on this film, an imaging system with polarization-selective properties and efficient UV spectral conversion was developed. The spectrum conversion of 266 to 520 nm luminescence wavelength was realized and sensitive to the polarization of incoming 266 nm UV light. The experimental results also showed that the response after spectral conversion is greatly improved, and different responsivities can correspond to different polarization states. This imaging system overcomes the insufficiency of the conventional charge coupled device (CCD), which makes it difficult to receive the optical signal for high-quality UV imaging. The use of light conversion films with polarization characteristics for polarized UV imaging is of great significance for improving the detection of solar-blind UV bands and the recognition of military targets.

Fabrication of Addressable Perovskite Film Arrays for High-Performance Photodetection and Real-Time Image Sensing Application

Patterned growth of periodic perovskite film arrays is essential for application in sensing devices and integrated optoelectronic systems. Herein, we report on patterned growth of addressable perovskite photodetector arrays through an uncured polydimethylsiloxane (PDMS) oligomer-assisted solution-processed approach, in which a periodic hydrophilic/hydrophobic substrate replicating the predesigned patterns of the PDMS stamp was formed due to the migration of uncured siloxane oligomers in the PDMS stamp to the intimately contacted substrate. By using this technique, MAPbI₃ film photodetector arrays with neglectable pixel-to-pixel variation, a responsivity of 2.83 A W^-1, specific detectivity of 5.4 × 10¹² Jones, and fast response speed of 52.7/57.1 μs (response/recovery time) were achieved. An 8 × 8 addressable photodetector array was further fabricated, which functioned well as a real-time image sensor with reasonable spatial resolution. It is believed that the proposed strategy will find potential application in large-scale fabrication of other photodetector arrays, which might be potentially important for future integrated optoelectronic devices.

Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10^-14 W Hz^-1/2 or a detectivity (D^*) of 2.7 × 10¹² cm Hz^1/2 W^-1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D^* of the nanogroove device can be improved to 3.8 × 10^-15 W Hz^-1/2 and 1.6 × 10¹³ cm Hz^1/2 W^-1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm

Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.

Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.

Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.