Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure

Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm2, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.

Metal-Organic Framework-Based Photodetectors

The unique and interesting physical and chemical properties of metal-organic framework (MOF) materials have recently attracted extensive attention in a new generation of photoelectric applications. In this review, we summarized and discussed the research progress on MOF-based photodetectors. The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details. Additionally, the photodetectors applications for X-ray, ultraviolet and infrared light, biological detectors, and circularly polarized light photodetectors are discussed. Furthermore, summaries and challenges are provided for this important research field.

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 μs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.

Enhanced Photocharacteristics by Fermi Level Modulating in Sb2 Te3 /Bi2 Se3 Topological Insulator p-n Junction

Topological insulators have recently received attention in optoelectronic devices because of their high mobility and broadband absorption resulting from their topological surface states. In particular, theoretical and experimental studies have emerged that can improve the spin generation efficiency in a topological insulator-based p-n junction structure called a TPNJ, drawing attention in optospintronics. Recently, research on implementing the TPNJ structure is conducted; however, studies on the device characteristics of the TPNJ structure are still insufficient. In this study, the TPNJ structure is effectively implemented without intermixing by controlling the annealing temperature, and the photocharacteristics appearing in the TPNJ structure are investigated using a cross-pattern that can compare the characteristics in a single device. Enhanced photo characteristics are observed for the TPNJ structure. An optical pump Terahertz probe and a physical property measurement system are used to confirm the cause of improved photoresponsivity. Consequently, the photocharacteristics are improved owing to the change in the absorption mechanism and surface transport channel caused by the Fermi level shift in the TPNJ structure.

Interfacial Engineering of In2Se3/h-BN/CsPb(Br/I)3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System

Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.

Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices

With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi₂ Se₃ as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe₂ channel realizes a high responsivity of 20.5 A W^-1 , an excellent detectivity of 2.18 × 10¹²  Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe₂ device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS₂ and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.

A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires

We report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO₂ microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10^-9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W^-1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 10¹⁴ Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.

Rational Design of WSe2 /WS2 /WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe₂ /WS₂ /WSe₂ dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 10¹⁴  Jones, high responsivity of 35.4 A W^-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm^-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS_x) to construct III-nitride/a-MoS_x core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W^-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W^-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS_x decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.

Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction

Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 10² A/W and an ultrahigh detectivity of 1.10 × 10¹¹ Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Omadacycline Efficacy against Streptococcus Agalactiae Isolated in China: Correlation between Resistance and Virulence Gene and Biofilm Formation

This study aimed to evaluate the activity, resistance, clonality of MIC distribution, and the correlation between virulence and resistance genes and biofilm formation of omadacycline (OMC) in clinics for Streptococcus agalactiae isolates from China. 162 isolates were collected retrospectively in China. The S. agalactiae were collected from the body's cervical secretions, wound secretions, ear swabs, secretions, semen, venous blood, cerebrospinal fluid, pee, etc. The MIC of OMC against S. agalactiae was determined by broth microdilution. The inhibition zone diameters of OMC and other common antibiotics were measured using filter paper. D-test was performed to determine the phenotype of cross resistance between erythromycin and clindamycin. In Multilocus sequence typing (MLST), some commonly-detected resistance genes and virulence gene of these S. agalactiae isolates were investigated using polymerase chain reaction (PCR). Biofilms were detected by crystal violet staining. Our data demonstrated the correalation of the biofilm formation and OMA antimicrobial susceptibility of S.agalactiae clinical isolates with the carrier of virulence gene scpB. Conclusively, OMC exhibits the robust antimcirobial activity against clinical S. agalactiae isolates from China compared with DOX or MIN, and the carrier of the virulence gene scpB might correlate with the biofilm formation in OMC-resistant S. agalactiae.

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures

III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

Ultra-Sensitive Biosensor with Simultaneous Detection (of Cancer and Diabetes) and Analysis of Deformation Effects on Dielectric Rods in Optical Microstructure

This study proposes a refractive index sensor for the simultaneous detection of cancer and diabetes based on photonic crystals (PhC). The proposed PhC composed of silicon rods in the air bed arranged in a hexagonal lattice forms the fundamental structure. Two tubes are used to place the cancerous or diabetic samples for measurement. The sensor’s transmission characteristics are simulated and analyzed by solving Maxwell’s electromagnetic equations using the finite-difference time-domain approach for samples being studied. Therefore, diabetes and cancer are detected according to the changes in the refractive index of the samples using the laser source centered at 1550 nm. Considering the findings, the sensor’s geometry changes to adjust the suggested sensitivity and quality factor of structure. According to the results, transmission power ranges between 91 and 100% based on the sample. Moreover, sensitivity ranges from 1294 to 3080 nm/RIU and the maximum Figure of Mertie is nearly FOM = 1550.11 ± 150.11 RIU−1 with the detection in range 31 × 10−6 RIU. In addition, the small area (61.56 μm2) of biosensor results in its appropriateness for different uses in compact photonic integrated circuits. Next, we changed the shape of the dielectric rods and investigated their effects on the sensitivity parameter. The sensitivity and figure of merit after changes in the shape of dielectric rods and nanocavities are at best S = 20,393 nm/RIU and FOM = 9104.017 ± 606.93 RIU−1, receptively. In addition, the resolution detection range is 203.93 × 10−6 RIU.

Two-Dimensional GeC2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio

In this study, we present that 2D tetrahex-GeC₂ materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC₂ monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC₂ monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 10⁵ for the tetrahex-GeC₂ monolayer. A striking negative differential conductance arises with the maximum I_peak/I_valley on the order of 10⁴ under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC₂ monolayer. Overall, the 2D tetrahex-GeC₂ monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.

Design, preparation, and characterization of CS/PVA/SA hydrogels modified with mesoporous Ag2O/SiO2 and curcumin nanoparticles for green, biocompatible, and antibacterial biopolymer film

One of the most significant factors affecting the rapid and effective healing of wounds is the application of appropriate wound dressings. In the present study, novel antibacterial wound dressings are fabricated that consist of Chitosan (CS)/Polyvinyl alcohol (PVA)/Sodium Alginate (SA), which are all biocompatible, functionalized with mesoporous Ag₂O/SiO₂ and curcumin nanoparticles as reinforcements. In this research nanocomposites are fabricated (0 wt%, 5 wt%, 10 wt%, 15 wt%, and 20 wt% of Ag₂O/SiO₂). After the composition of nanocomposites using the cross-linked technique, Fourier Transform Infrared (FT-IR) spectroscopy is performed to confirm the functional groups that are added to the polymer at each step. X-ray diffraction (XRD) is done to show the crystallinity of Ag₂O/SiO₂. Field emission scanning electron microscopy (FE-SEM) studies are performed to demonstrate the morphology of the structure, Energy-dispersive X-ray spectroscopy (EDS) is done to examine the elements in the wound dressing and atomic force microscopy (AFM) study is performed to show surface roughness and pores. Then the nanocomposites with different weight percentages are cultured in three bacteria called Acinetobacter baumannii, Staphylococcus epidermidis, and Proteus mirabilis, all three of which cause skin infections. Finally, by performing the tensile test, the results related to the tensile strength of the wound dressings are examined. The results show that with the increase of Ag₂O/SiO₂, the mechanical properties, as well as the healing properties of the wound dressing, have increased significantly. Fabricating these nanocomposites helps a lot in treating skin infections.

CS/PVA/SA hydrogels modified with mesoporous Ag₂O/SiO₂ and curcumin nanoparticles for antibacterial biopolymer film.

Day-ahead electricity price forecasting using WPT, VMI, LSSVM-based self adaptive fuzzy kernel and modified HBMO algorithm

Due to focal liberality in electricity market projection, researchers try to suggest powerful and successful price forecasting algorithms. Since, the accurate information of future makes best way for market participants so as to increases their profit using bidding strategies, here suggests an algorithm for electricity price anticipation. To cover this goal, separate an algorithm into three steps, namely; pre-processing, learning and tuning. The pre-processing part consists of Wavelet Packet Transform (WPT) to analyze price signal to high and low frequency subseries and Variational Mutual Information (VMI) to select valuable input data in order to helps the learning part and decreases the computation burden. Owing to the learning part, a new Least squares support vector machine based self-adaptive fuzzy kernel (LSSVM-SFK) is proposed to extract best map pattern from input data. A new modified HBMO is introduced to optimally set LSSVM-SFK variables such as bias, weight, etc. To improve the performances of HBMO, two modifications are proposed that has high stability in HBMO. Suggested forecasting algorithm is examined on electricity markets that has acceptable efficiency than other models.

A DFT study on the potential application of pristine, B and N doped carbon nanocones in potassium-ion batteries

Although lithium-ion batteries are broadly applied for various purposes, they suffer from safety problems, high cost, and short life. Due to widespread availability, low cost, and nontoxicity of potassium, potassium ion batteries (PIBs) can be applied instead of lithium-ion batteries. Here, dispersion-corrected B3LYP calculations were used to explore potential application of pristine carbon nanocone (CNC) as well as its B- and N-doped models in PIBs. The K cation and K atom were adsorbed onto the center of the apex ring of CNC, and the energies of adsorption were - 19.3 and - 9.0 kcal/mol. The CNC creates a cell voltage of 0.44 V as an anode material which is very small. We showed that substituting some C atoms of CNC by the electron-rich N atoms makes the nanocone more appropriate for application in the PIBs, while B-doping meaningfully decreases the cell voltage. The cell voltage created by the considered nanocones in the PIBs has the following order: N-CNC (~ 1.24 V) > CNC (~ 0.45 V) > > B-CNC (~ 0.24 V). This work illustrated that the N-CNC may be a promising electrode material for PIBs.

In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity

The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeS_x shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 10⁵ A·W^-1 and detectivity of 10¹² Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm^-2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications.

A reasonably designed 2D WS2 and CdS microwire heterojunction for high performance photoresponse

Heterojunctions based on low-dimensional materials can combine the superiorities of each component and realize novel properties. Herein, a mixed-dimensional heterojunction comprising multilayer WS₂, CdS microwire, and few-layer WS₂ has been demonstrated. The working mechanism and its application in a photodetector are investigated. The multilayer WS₂ and CdS microwire are utilized to provide efficient light absorption, while the few-layer WS₂ is utilized to passivate interfacial impurity scattering. In addition, based on the reasonable band alignment of the components, three built-in electric fields are formed, which efficiently separate the photo-generated carriers and enhance the photocurrent. In particular, the photo-generated electrons are trapped in CdS, while the photo-generated holes circulate in the external circuit, leading to a high photoconductivity gain. Motivated by these, we constructed a device that exhibits a photoresponsivity of ∼4.7 A W^-1, a response/recovery time of 13.7/15.8 ms, and a detectivity of 3.4 × 10¹² Jones, which are much better than the counterparts. All of these clearly demonstrate the importance of advanced device designs for realizing high performance optoelectronic devices.

Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers. By adjusting the bias voltage to vary the depth of the depletion region, we have confirmed the influence of the depletion region in a 2DHT. A significant inflection point was found in the responsivity-voltage curve at 1.5 V. By combining the depletion region and 2DHT, the responsivity of the fabricated device was increased by 18 times to 0.199 A W^-1 and the detectivity is increased by 5 times to 5.8 × 10¹⁰ Jones, compared to the pure GaAs NW photodetector. Reasonable combination of depletion layer and 2DHT was proved to promote high-performance NW photodetector.