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Vaňo V, Ganguli SC, Amini M, Yan L, Khosravian M, Chen G, Kezilebieke S, Lado JL, Liljeroth P. Evidence of Nodal Superconductivity in Monolayer 1H-TaS 2 with Hidden Order Fluctuations. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305409. [PMID: 37592888 DOI: 10.1002/adma.202305409] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Revised: 08/07/2023] [Indexed: 08/19/2023]
Abstract
Unconventional superconductors represent one of the fundamental directions in modern quantum materials research. In particular, nodal superconductors are known to appear naturally in strongly correlated systems, including cuprate superconductors and heavy-fermion systems. Van der Waals materials hosting superconducting states are well known, yet nodal monolayer van der Waals superconductors have remained elusive. Here, using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments, it is shown that pristine monolayer 1H-TaS2 realizes a nodal superconducting state. Non-magnetic disorder drives the nodal superconducting state to a conventional gapped s-wave state. Furthermore, many-body excitations emerge close to the gap edge, signalling a potential unconventional pairing mechanism. The results demonstrate the emergence of nodal superconductivity in a van der Waals monolayer, providing a building block for van der Waals heterostructures exploiting unconventional superconducting states.
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Affiliation(s)
- Viliam Vaňo
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
| | | | - Mohammad Amini
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
| | - Linghao Yan
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Maryam Khosravian
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
| | - Guangze Chen
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden
| | - Shawulienu Kezilebieke
- Department of Physics, Department of Chemistry and Nanoscience Center, University of Jyväskylä, University of Jyväskylä, FI-40014, Finland
| | - Jose L Lado
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
| | - Peter Liljeroth
- Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
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Deng F, Wei J, Xu Y, Lin Z, Lu X, Wan YJ, Sun R, Wong CP, Hu Y. Regulating the Electrical and Mechanical Properties of TaS 2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding. NANO-MICRO LETTERS 2023; 15:106. [PMID: 37071313 PMCID: PMC10113419 DOI: 10.1007/s40820-023-01061-1] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
Low-dimensional transition metal dichalcogenides (TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness, and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS2 freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals (vdW) interactions within the staggered 2H-TaS2 nanosheets. The restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm-1, electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, and absolute EMI SE (SSE/t) of 27,859 dB cm2 g-1, which is the highest value reported for TMD-based materials. The bond-free vdW interactions between the adjacent 2H-TaS2 nanosheets provide a natural interfacial strain relaxation, achieving excellent flexibility without rupture after 1,000 bends. In addition, the TaS2 nanosheets are further combined with the polymer fibers of bacterial cellulose and aramid nanofibers via electrostatic interactions to significantly enhance the tensile strength and flexibility of the films while maintaining their high electrical conductivity and EMI SE.This work provides promising alternatives for conventional materials used in EMI shielding and nanodevices.
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Affiliation(s)
- Fukang Deng
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Jianhong Wei
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
- Shenzhen Geim Graphene Center, Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, People's Republic of China
| | - Yadong Xu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Zhiqiang Lin
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Xi Lu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Yan-Jun Wan
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China
| | - Rong Sun
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China.
| | - Ching-Ping Wong
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Yougen Hu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China.
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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Effect of alloying in monolayer niobium dichalcogenide superconductors. Nat Commun 2022; 13:2376. [PMID: 35501318 PMCID: PMC9061790 DOI: 10.1038/s41467-022-29213-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 03/04/2022] [Indexed: 11/13/2022] Open
Abstract
When sulfur and silicon are incorporated in monolayer 2H-NbSe2 the superconducting transition temperature, Tc, has been found to vary non-monotonically. This was assumed to be a manifestation of fractal superconductivity. Using first-principles calculations, we show that the nonmonotonic dependence of Tc is insufficient evidence for multifractality. A unifying aspect in our study are selenium vacancies in NbSe2, which are magnetic pair-breaking defects that we propose can be present in considerable concentrations in as-grown NbSe2. We show that sulfur and silicon can occupy the selenium sites and reduce the pair-breaking effect. Furthermore, when sulfur is incorporated in NbSe2, the density of states at the Fermi level and the proximity to magnetism in the alloy are both reduced compared to the parent compound. Based on our results, we propose an alternative explanation of the non-monotonic change in Tc which does not require the conjecture of multifractality. The non-monotonic behaviour of the superconducting transition temperature in NbSe2-xSx monolayer alloys has been linked to fractal superconductivity. Here, using first-principles calculations, the authors provide an alternative explanation for this behavior based on the effects of alloying and defects on the electronic structure and magnetism.
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Luo Y, Han S, Hu R, Yuan H, Jiao W, Liu H. The Thermal Stability of Janus Monolayers SnXY (X, Y = O, S, Se): Ab-Initio Molecular Dynamics and Beyond. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:101. [PMID: 35010049 PMCID: PMC8746883 DOI: 10.3390/nano12010101] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2021] [Revised: 12/22/2021] [Accepted: 12/28/2021] [Indexed: 11/16/2022]
Abstract
In recent years, the Janus monolayers have attracted tremendous attention due to their unique asymmetric structures and intriguing physical properties. However, the thermal stability of such two-dimensional systems is less known. Using the Janus monolayers SnXY (X, Y = O, S, Se) as a prototypical class of examples, we investigate their structure evolutions by performing ab-initio molecular dynamics (AIMD) simulations at a series of temperatures. It is found that the system with higher thermal stability exhibits a smaller difference in the bond length of Sn-X and Sn-Y, which is consistent with the orders obtained by comparing their electron localization functions (ELFs) and atomic displacement parameters (ADPs). In principle, the different thermal stability of these Janus structures is governed by their distinct anharmonicity. On top of these results, we propose a simple rule to quickly predict the maximum temperature up to which the Janus monolayer can stably exist, where the only input is the ADP calculated by the second-order interatomic force constants rather than time-consuming AIMD simulations at various temperatures. Furthermore, our rule can be generalized to predict the thermal stability of other Janus monolayers and similar structures.
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Affiliation(s)
| | | | | | | | | | - Huijun Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China; (Y.L.); (S.H.); (R.H.); (H.Y.); (W.J.)
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6
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Hopkinson DG, Seki T, Clark N, Chen R, Zou Y, Kimura A, Gorbachev RV, Thomson T, Shibata N, Haigh SJ. Nanometre imaging of Fe 3GeTe 2 ferromagnetic domain walls. NANOTECHNOLOGY 2021; 32:205703. [PMID: 33624615 DOI: 10.1088/1361-6528/abe32b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Fe3GeTe2 is a layered crystal which has recently been shown to maintain its itinerant ferromagnetic properties even when atomically thin. Here, differential phase contrast scanning transmission electron microscopy is used to investigate the domain structure in a Fe3GeTe2 cross-sectional lamella at temperatures ranging from 95 to 250 K and at nanometre spatial resolution. Below the experimentally determined Curie temperature (T C) of 191 K, stripe domains magnetised along 〈0001〉, bounded with 180◦ Bloch type domain walls, are observed, transitioning to mixed Bloch-Néel type where the cross-sectional thickness is reduced below 50 nm. When warming towards T C, these domains undergo slight restructuring towards uniform size, before abruptly fading at T C. Localised loss of ferromagnetic order is seen over time, hypothesised to be a frustration of ferromagnetic order from ambient oxidation and basal cracking, which could enable selective modification of the magnetic properties for device applications.
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Affiliation(s)
- David G Hopkinson
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Takehito Seki
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Nicholas Clark
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Runze Chen
- Department of Computer Science, The University of Manchester, M13 9PL, United Kingdom
| | - Yichao Zou
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
| | - Ayumi Kimura
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Roman V Gorbachev
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Physics & Astronomy, The University of Manchester, M13 9PL, United Kingdom
| | - Thomas Thomson
- Department of Computer Science, The University of Manchester, M13 9PL, United Kingdom
| | - Naoya Shibata
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
- Nanostructures Research Laboratory, Japan Fine Ceramic Center, Atsuta, Nagoya 456-8587, Japan
| | - Sarah J Haigh
- National Graphene Institute, The University of Manchester, M13 9PL, United Kingdom
- Department of Materials, The University of Manchester, M13 9PL, United Kingdom
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7
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Qiu D, Gong C, Wang S, Zhang M, Yang C, Wang X, Xiong J. Recent Advances in 2D Superconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006124. [PMID: 33768653 DOI: 10.1002/adma.202006124] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/22/2020] [Indexed: 06/12/2023]
Abstract
The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (Tc ), continuous phase transition, and enhanced parallel critical magnetic field (Bc ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-Tc superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced Bc , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.
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Affiliation(s)
- Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - SiShuang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Miao Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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8
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Hamer MJ, Hopkinson DG, Clark N, Zhou M, Wang W, Zou Y, Kelly DJ, Bointon TH, Haigh SJ, Gorbachev RV. Atomic Resolution Imaging of CrBr 3 Using Adhesion-Enhanced Grids. NANO LETTERS 2020; 20:6582-6589. [PMID: 32786938 DOI: 10.1021/acs.nanolett.0c02346] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments, and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air-sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution that allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr3, a novel magnetic material that degrades in ambient conditions.
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Affiliation(s)
- Matthew J Hamer
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - David G Hopkinson
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Nick Clark
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Mingwei Zhou
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Yichao Zou
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Daniel J Kelly
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Thomas H Bointon
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Sarah J Haigh
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Materials, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Roman V Gorbachev
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Henry Royce Institute, Oxford Road, Manchester M13 9PL, United Kingdom
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