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Scherrer M, Lee CW, Schmid H, Moselund KE. Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode. ACS PHOTONICS 2024; 11:1006-1011. [PMID: 38523747 PMCID: PMC10958602 DOI: 10.1021/acsphotonics.3c01372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/29/2024] [Accepted: 01/29/2024] [Indexed: 03/26/2024]
Abstract
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.
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Affiliation(s)
- Markus Scherrer
- Science
of Quantum and Information Technology, IBM
Research Europe-Zurich, 8803 Rüschlikon, Switzerland
| | - Chang-Won Lee
- Institute
of Advanced Optics and Photonics, Hanbat
National University, 34158 Daejeon, South
Korea
| | - Heinz Schmid
- Science
of Quantum and Information Technology, IBM
Research Europe-Zurich, 8803 Rüschlikon, Switzerland
| | - Kirsten E. Moselund
- Laboratory
of Nano and Quantum Technologies (LNQ), Paul Scherrer Institut (PSI), 5232 Villigen, Switzerland
- Integrated
Nanoscale Photonics and Optoelectronics Laboratory (INPhO), Ecole Polytechnique Fédérale de Lausanne
(EPFL), 1015 Lausanne, Switzerland
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2
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Yan Z, Ratiu BP, Zhang W, Abouzaid O, Ebert M, Reed GT, Thomson DJ, Li Q. Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator. CRYSTAL GROWTH & DESIGN 2023; 23:7821-7828. [PMID: 37937193 PMCID: PMC10626574 DOI: 10.1021/acs.cgd.3c00633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 09/24/2023] [Indexed: 11/09/2023]
Abstract
Current heterogeneous Si photonics usually bond III-V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy could benefit from a front-end process where III-V materials are grown prior to the fabrication of passive optical circuits. Here we demonstrate a front-end-of-line (FEOL) processing and epitaxy approach on Si photonics 220 nm (001) SOI wafers to enable positioning dislocation-free GaAs layers in lithographically defined cavities right on top of the buried oxide layer. Thanks to the defect confinement in lateral growth, threading dislocations generated from the III-V/Si interface are effectively trapped within ∼250 nm of the Si surface. This demonstrates the potential of in-plane co-integration of III-Vs with Si on mainstream 220 nm SOI platform without relying on thick, defective buffer layers. The challenges associated with planar defects and coalescence into larger membranes for the integration of on-chip optical devices are also discussed.
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Affiliation(s)
- Zhao Yan
- School of
Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K.
| | | | - Weiwei Zhang
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
| | - Oumaima Abouzaid
- School of
Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K.
| | - Martin Ebert
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
| | - Graham T. Reed
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
| | - David J. Thomson
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
| | - Qiang Li
- School of
Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K.
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3
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Zhong H, Yu Y, Zheng Z, Ding Z, Zhao X, Yang J, Wei Y, Chen Y, Yu S. Ultra-low threshold continuous-wave quantum dot mini-BIC lasers. LIGHT, SCIENCE & APPLICATIONS 2023; 12:100. [PMID: 37185331 PMCID: PMC10130040 DOI: 10.1038/s41377-023-01130-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 03/02/2023] [Accepted: 03/11/2023] [Indexed: 05/17/2023]
Abstract
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their excellent ability of trapping light and enhancing light-matter interaction, have been investigated in lasing configurations combining various BIC cavities and optical gain materials. However, the realization of BIC laser with a highly compact size and an ultra-low CW threshold has remained elusive. We demonstrate room temperature CW BIC lasers in the 1310 nm O-band wavelength range, by fabricating a miniaturized BIC cavity in an InAs/GaAs epitaxial quantum dot (QD) gain membrane. By enabling effective trapping of both light and carriers in all three dimensions, ultra-low threshold of 12 μW (0.052 kW cm-2) is achieved at room temperature. Single-mode lasing is also realized in cavities as small as only 5 × 5 unit cells (~2.5 × 2.5 μm2 cavity size) with a mode volume of 1.16(λ/n)3. The maximum operation temperature reaches 70 °C with a characteristic temperature of T0 ~93.9 K. With its advantages in terms of a small footprint, ultra-low power consumption, and adaptability for integration, the mini-BIC lasers offer a perspective light source for future PICs aimed at high-capacity optical communications, sensing and quantum information.
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Affiliation(s)
- Hancheng Zhong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
| | - Ziyang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Zhengqing Ding
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Xuebo Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Jiawei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Yuming Wei
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yingxin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Siyuan Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
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4
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Zong S, Zeng D, Liu G, Wang Y, Liu Z, Chen J. Multiple resonant modes coupling enabled strong CD response in a chiral metasurface. OPTICS EXPRESS 2022; 30:40470-40481. [PMID: 36298979 DOI: 10.1364/oe.475060] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2022] [Accepted: 10/11/2022] [Indexed: 06/16/2023]
Abstract
The chiral structures with strong circular dichroism (CD) response and narrow linewidth are desirable in chiral sensing, circularly-polarized light detection, and polarization imaging. Here, we theoretically proposed a hybrid chiral metasurface for differential absorption of circularly polarized light. Based on the multiple resonant modes coupling effect in a two-dimensional dielectric slab, it is realizable then to achieve a nearly perfect absorption for right circularly polarized light and simultaneously reflects 90% of left circularly polarized light, suggesting the generation of strong CD of 0.886 within a narrowly spectral linewidth of 4.53 nm. The multipole analysis reveals that the electric dipole, the magnetic dipole, and the electric quadrupole make dominant contributions to chiral absorption and the high CD response in this metsurface. The excitation of guided mode resonance enhances the ability of this metasurface to absorb electric field. Moreover, the optical chirality response can be further manipulated through the geometry features. These findings pave a powerful way to realize the narrowing and strong CD platform for single-band and multiband chirality behaviors.
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Tiwari P, Fischer A, Scherrer M, Caimi D, Schmid H, Moselund KE. Single-Mode Emission in InP Microdisks on Si Using Au Antenna. ACS PHOTONICS 2022; 9:1218-1225. [PMID: 35480488 PMCID: PMC9026291 DOI: 10.1021/acsphotonics.1c01677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Indexed: 06/14/2023]
Abstract
An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.
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Wen P, Tiwari P, Mauthe S, Schmid H, Sousa M, Scherrer M, Baumann M, Bitachon BI, Leuthold J, Gotsmann B, Moselund KE. Waveguide coupled III-V photodiodes monolithically integrated on Si. Nat Commun 2022; 13:909. [PMID: 35177604 PMCID: PMC8854727 DOI: 10.1038/s41467-022-28502-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Accepted: 01/14/2022] [Indexed: 11/10/2022] Open
Abstract
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
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Affiliation(s)
- Pengyan Wen
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Preksha Tiwari
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Svenja Mauthe
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Markus Scherrer
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Michael Baumann
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bertold Ian Bitachon
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Juerg Leuthold
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bernd Gotsmann
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Kirsten E Moselund
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland.
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7
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Okada H, Fujimoto M, Tanaka N, Saito Y, Asano T, Noda S, Takahashi Y. 1.2-µm-band ultrahigh-Q photonic crystal nanocavities and their potential for Raman silicon lasers. OPTICS EXPRESS 2021; 29:24396-24410. [PMID: 34614686 DOI: 10.1364/oe.431721] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Accepted: 07/06/2021] [Indexed: 06/13/2023]
Abstract
Nanocavity devices based on silicon that can operate in the 1.2-µm band would be beneficial for several applications. We fabricate fifteen cavities with resonance wavelengths between 1.20 and 1.23 µm. Experimental quality (Q) factors larger than one million are obtained and the average Q values are lower for shorter wavelengths. Furthermore, we observe continuous-wave operation of a Raman silicon laser with an excitation wavelength of 1.20 µm and a Raman laser wavelength of 1.28 µm. The Q values of the nanocavity modes used to confine the excitation light and the Raman scattered light are about half of those for our Raman silicon laser operating in the 1.55-µm band. Nevertheless, this device exhibits an input-output characteristic with a clear laser threshold. Finally, we consider the effect of the higher scattering probability at shorter wavelengths on the Raman laser performance in the 1.2-µm band.
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In-Plane Monolithic Integration of Scaled III-V Photonic Devices. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11041887] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.
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