Second-Harmonic Young's Interference in Atom-Thin Heterocrystals

Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS2

2D transition metal dichalcogenides (TMDs) exhibit exceptional resilience to mechanical deformation. Applied strain can have pronounced effects on properties such as the bandgaps and exciton dynamics of TMDs, via deformation potentials and electromechanical coupling. In this work, we use piezoresponse force microscopy to show that the inhomogeneous strain from nanobubbles produces dramatic, localized enhancements of the electromechanical response of monolayer MoS2. Nanobubbles with diameters under 100 nm consistently produce an increased piezoresponse that follows the features' topography, while larger bubbles exhibit a halo-like profile, with maximum piezoresponse near the periphery. We show that spatial filtering enables these effects to be eliminated in the quantitative determination of effective piezoelectric or flexoelectric coefficients. Numerical strain modeling reveals a correlation between the hydrostatic strain gradient and the effective piezoelectric coefficient in large MoS2 nanobubbles, suggesting a localized variation in electromechanical coupling due to symmetry reduction induced by inhomogeneous strain.

Nonlinear and Negative Effective Diffusivity of Interlayer Excitons in Moiré-Free Heterobilayers

Interlayer exciton diffusion is studied in atomically reconstructed MoSe_{2}/WSe_{2} heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly polarized photoluminescence, and g-factor measurements. Using transient microscopy we observe propagation properties of interlayer excitons that are independent from trapping at moiré- or disorder-induced local potentials. Confirmed by characteristic temperature dependence for free particles, linear diffusion coefficients of interlayer excitons at liquid helium temperature and low excitation densities are almost 1000 times higher than in previous observations. We further show that exciton-exciton repulsion and annihilation contribute nearly equally to nonlinear propagation by disentangling the two processes in the experiment and simulations. Finally, we demonstrate effective shrinking of the light emission area over time across several hundreds of picoseconds at the transition from exciton- to the plasma-dominated regimes. Supported by microscopic calculations for band gap renormalization to identify the Mott threshold, this indicates transient crossing between rapidly expanding, short-lived electron-hole plasma and slower, long-lived exciton populations.

Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures

The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness, which circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such heterosystems remains unexplored. In this study, we investigate exciton-sensitized SHG in heterobilayers of transition metal dichalcogenides (TMDs), where photoexcitation of one donor layer enhances the SHG response of the other as an acceptor. We utilize polarization-resolved interferometry to detect the SHG intensity and phase of each individual layer, revealing the energetic match between the excitonic resonances of donors and the SHG enhancement of acceptors for four TMD combinations. Our results also uncover the dynamic nature of interlayer coupling, as made evident by the dependence of sensitization on interlayer gap spacing and the average power of the fundamental beam. This work provides insights into how the interlayer coupling of two different layers can modify nonlinear optical phenomena in 2D heterostructures.

Probing the Twist-Controlled Interlayer Coupling in Artificially Stacked Transition Metal Dichalcogenide Bilayers by Second-Harmonic Generation

Interlayer coupling plays a critical role in the electronic band structures and optoelectronic properties of van der Waals (vdW) materials and heterostructures. Here, we utilize optical second-harmonic generation (SHG) measurements to probe the twist-controlled interlayer coupling in artificially stacked WSe2/WSe2 homobilayers and WSe2/WS2 and WSe2/MoS2 heterobilayers with a postannealing procedure. In the large angle twisted WSe2/WSe2 and WSe2/WS2, the angular dependence of the SHG intensity follows the interference relations up to angles above 10°. For lower angles, the SHG is significantly suppressed. Furthermore, for the twisted WSe2/MoS2 the SHG intensity largely deviates from the coherent superposition model and shows consistent quenching for all the stacking angles. The suppressed SHG in twisted transition metal dichalcogenide (TMDC) bilayers is predominantly attributed to the interlayer coupling between the two adjacent monolayers. The evolution of the interlayer Raman mode in WSe2 demonstrates that the interlayer coupling in the twisted WSe2/WSe2 and WSe2/WS2 is highly angle-dependent. Alternatively, the interlayer coupling generally exists in the twisted WSe2/MoS2, regardless of the different angles. The interlayer coupling is further confirmed by the quenching and red-shift of the photoluminescence of WSe2 in the twisted TMDC bilayers. Combined with density functional theory calculations, we reveal that the stacking-angle-modulated interlayer coupling originates from the variation of the interlayer spacing and the binding energy in the twisted TMDC bilayers.

Photoluminescence Path Bifurcations by Spin Flip in Two-Dimensional CrPS4

Ultrathin layered crystals of coordinated chromium(III) are promising not only as two-dimensional (2D) magnets but also as 2D near-infrared (NIR) emitters due to long-range spin correlation and efficient transition between high- and low-spin excited states of Cr³⁺ ions. In this study, we report on the dual-band NIR photoluminescence (PL) of CrPS₄ and show that its excitonic emission bifurcates into fluorescence and phosphorescence depending on thickness, temperature, and defect density. In addition to the spectral branching, the biexponential decay of PL transients, also affected by the three factors, could be well described within a three-level kinetic model for Cr(III). In essence, the PL bifurcations are governed by activated reverse intersystem crossing from the low- to high-spin states, and the transition barrier becomes lower for thinner 2D samples because of surface-localized defects. Our findings can be generalized to 2D solids of coordinated metals and will be valuable in realizing groundbreaking magneto-optic functions and devices.

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene^1-3, hexagonal boron nitride (hBN)^4-6 and transition metal dichalcogenides^7,8 have been grown. hBN is considered to be the 'ideal' dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore's law^9,10. Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors^11,12, highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni₂₃B₆ interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni₂₃B₆ and between Ni₂₃B₆ and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO₂ (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO₂ substrate in MoS₂ FETs. Our results demonstrate high-quality single-crystal  multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors.

Interlayer exciton mediated second harmonic generation in bilayer MoS2

Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials.

Studying 2D materials with advanced Raman spectroscopy: CARS, SRS and TERS

Raman spectroscopy has been established as a valuable tool to study and characterize two-dimensional (2D) systems, but it exhibits two drawbacks: a relatively weak signal response and a limited spatial resolution. Recently, advanced Raman spectroscopy techniques, such as coherent anti-Stokes spectroscopy (CARS), stimulated Raman scattering (SRS) and tip-enhanced Raman spectroscopy (TERS), have been shown to overcome these two limitations. In this article, we review how useful physical information can be retrieved from different 2D materials using these three advanced Raman spectroscopy and imaging techniques, discussing results on graphene, hexagonal boron-nitride, and transition metal di- and mono-chalcogenides, thus providing perspectives for future work in this early-stage field of research, including similar studies on unexplored 2D systems and open questions.

Extraordinary Photostability and Davydov Splitting in BN-Sandwiched Single-Layer Tetracene Molecular Crystals

Two-dimensional molecular crystals have been beyond the reach of systematic investigation because of the lack or instability of their well-defined forms. Here, we demonstrate drastically enhanced photostability and Davydov splitting in single and few-layer tetracene (Tc) crystals sandwiched between inorganic 2D crystals of graphene or hexagonal BN. Molecular orientation and long-range order mapped with polarized wide-field photoluminescence imaging and optical second-harmonic generation revealed high crystallinity of the 2D Tc and its distinctive orientational registry with the 2D inorganic crystals, which were also verified with first-principles calculations. The reduced dielectric screening in 2D space was manifested by enlarged Davydov splitting and attenuated vibronic sidebands in the excitonic absorption and emission of monolayer Tc crystals. Photostable 2D molecular crystals and their size effects will lead to novel photophysical principles and photonic applications.

Borophene via Micromechanical Exfoliation

Borophene, the lightest among all Xenes, possesses extreme electronic mobility along with high carrier density and high Young's modulus. To accomplish device-quality borophene, novel approaches of realization of monolayers need to be urgently explored. In this work, micromechanical exfoliation is discovered to result in mono- and few-layered borophene of device quality. Borophene sheets are successfully fabricated down to monolayer thickness. Distinct crystallographic phases of borophene viz. XRD study reveals crystallographic phase transition from rhombohedral to several other eigen phases of borophene. The role of the destination substrates is held crucial in determining the final phase of the transferred sheet. The exfoliation energy is calculated by density functional theory. Molecular dynamics simulations are used to simulate the exfoliation process. Heterolayers of borophene, with black phosphorene (BP) or with molybdenum disulfide (MoS₂ ) atomic sheets, are found to result in photoexcited coupling quantum states. Gold-coated borophene bestows promising anchoring capability for surface-enhanced Raman spectroscopy (SERS). Successful demonstration of the electronic behavior of micromechanically exfoliated borophene and excitonic behavior of borophene-based heterolayers will guide future generation devices not only in electronics and excitonics, but also in thermal management, electronic packaging, hydrogen storage, hybrid energy storage, and clean energy solutions.