Superconducting Contacts to a Monolayer Semiconductor

Synthesis and Future Electronic Applications of Topological Nanomaterials

Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.

Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction

Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.

Gate-Defined Josephson Weak-Links in Monolayer WTe2

Systems combining superconductors with topological insulators offer a platform for the study of Majorana bound states and a possible route to realize fault tolerant topological quantum computation. Among the systems being considered in this field, monolayers of tungsten ditelluride (WTe2 ) have a rare combination of properties. Notably, it has been demonstrated to be a quantum spin Hall insulator (QSHI) and can easily be gated into a superconducting state. Measurements on gate-defined Josephson weak-link devices fabricated using monolayer WTe2 are reported. It is found that consideration of the 2D superconducting leads are critical in the interpretation of magnetic interference in the resulting junctions. The reported fabrication procedures suggest a facile way to produce further devices from this technically challenging material and the results mark the first step toward realizing versatile all-in-one topological Josephson weak-links using monolayer WTe2 .

Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor

Spins confined to atomically thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom with spin-valley locking and potentially enhanced spin life and coherence times. However, realizing well-separated single-particle levels and achieving transparent electrical contact to address them has remained challenging. Here, we report well-defined spin states in a few-layer MoS₂ transistor, characterized with a spectral resolution of ∼50 μeV at T_el = 150 mK. Ground state magnetospectroscopy confirms a finite Berry-curvature induced coupling of spin and valley, reflected in a pronounced Zeeman anisotropy, with a large out-of-plane g-factor of g_⊥ ≃ 8. A finite in-plane g-factor (g_∥ ≃ 0.55-0.8) allows us to quantify spin-valley locking and estimate the spin-orbit splitting 2Δ_SO ∼ 100 μeV. The demonstration of spin-valley locking is an important milestone toward realizing spin-valley quantum bits.

Intrinsic giant magnetoresistance due to exchange-bias-type effects at the surface of single-crystalline NiS2 nanoflakes

The coexistence of different properties in the same material often results in exciting physical effects. At low temperatures, the pyrite transition-metal disulphide NiS₂ hosts both antiferromagnetic and weak ferromagnetic orders, along with surface metallicity dominating its electronic transport. The interplay between such a complex magnetic structure and surface-dominated conduction in NiS₂, however, is still not understood. A possible reason for this limited understanding is that NiS₂ has been available primarily in bulk single-crystal form, which makes it difficult to perform studies combining magnetometry and transport measurements with high spatial resolution. Here, NiS₂ nanoflakes are produced via mechanical cleaving and exfoliation of NiS₂ single crystals and their properties are studied on a local (micron-size) scale. Strongly field-asymmetric magnetotransport features are found at low temperatures, which resemble those of more complex magnetic thin film heterostructures. Using nitrogen vacancy magnetometry, these magnetotransport features are related to exchange-bias-type effects between ferromagnetic and antiferromagnetic regions forming near step edges at the nanoflake surface. Nanoflakes with bigger steps exhibit giant magnetoresistance, which suggests a strong influence of magnetic spin textures at the NiS₂ surface on its electronic transport. These findings pave the way for the application of NiS₂ nanoflakes in van der Waals heterostructures for low-temperature spintronics and superconducting spintronics.

Tunneling Spectroscopy of Two-Dimensional Materials Based on Via Contacts

We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely, metallic contacts embedded into through-holes in hexagonal boron nitride (hBN). We use the via-based tunneling method to study the single-particle density of states of two different two-dimensional (2D) materials, NbSe₂ and graphene. In NbSe₂ devices, we characterize the barrier strength and interface disorder for barrier thicknesses of 0, 1, and 2 layers of hBN and study the dependence on the tunnel-contact area down to (44 ± 14)² nm². For 0-layer hBN devices, we demonstrate a crossover from diffusive to point contacts in the small-contact-area limit. In graphene, we show that reducing the tunnel barrier thickness and area can suppress effects due to phonon-assisted tunneling and defects in the hBN barrier. This via-based architecture overcomes limitations of other planar tunneling designs and produces high-quality, ultraclean tunneling structures from a variety of 2D materials.

Fabrication of Janus-type nanocomposites from cellulose nanocrystals for self-healing hydrogels' flexible sensors

Janus bio-nanomaterials have great application potential in functional solid surfactants, probes and flexible sensors. In this manuscript, the sustainable Janus cellulose nanocrystals-type (CNCs-type) nanomaterials were prepared by Pickering emulsion template method. The asymmetric functionalism of Janus nanorods was realized by asymmetrically grafting polypyrrole (PPy) and polydopamine (PDA) onto different sides of CNCs (Janus CNCs-PPy /PDA (JCNs)). JCNs was successfully applied to self-healing nanocomposite hydrogels and further applied to the development of flexible sensors. The self-healing efficiency of nanocomposite hydrogels was 87.2%, and the stress and strain reached 3.50 MPa and 453.45%, respectively. It is worth noting that flexible sensors have been widely used in the field of wearable electronic sensing for real-time monitoring of human movement due to their high sensitivity (gauge factor (GF) = 9.9) and fast response time (260 ms).

Evidence of Josephson Coupling in a Few-Layer Black Phosphorus Planar Josephson Junction

Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli-Kelvin temperatures. Manifestation of a Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and will expedite further studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes.

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.