1
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Thomas JC, Chen W, Xiong Y, Barker BA, Zhou J, Chen W, Rossi A, Kelly N, Yu Z, Zhou D, Kumari S, Barnard ES, Robinson JA, Terrones M, Schwartzberg A, Ogletree DF, Rotenberg E, Noack MM, Griffin S, Raja A, Strubbe DA, Rignanese GM, Weber-Bargioni A, Hautier G. A substitutional quantum defect in WS 2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation. Nat Commun 2024; 15:3556. [PMID: 38670956 DOI: 10.1038/s41467-024-47876-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 04/15/2024] [Indexed: 04/28/2024] Open
Abstract
Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (CoS 0 ) and fabricate it with scanning tunneling microscopy (STM). The CoS 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.
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Affiliation(s)
- John C Thomas
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
| | - Wei Chen
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Bradford A Barker
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Junze Zhou
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Weiru Chen
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Antonio Rossi
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nolan Kelly
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Shalini Kumari
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Adam Schwartzberg
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Frank Ogletree
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Marcus M Noack
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Sinéad Griffin
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - David A Strubbe
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Gian-Marco Rignanese
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Alexander Weber-Bargioni
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
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2
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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3
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Tsai MY, Tsai TH, Gandhi AC, Lu HL, Li JX, Chen PL, Chen KW, Chen SZ, Chen CH, Liu CH, Lin YF, Chiu PW. Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain. ACS NANO 2023; 17:25037-25044. [PMID: 38096421 DOI: 10.1021/acsnano.3c07665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 μs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.
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Affiliation(s)
- Meng-Yu Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tsung-Han Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Hsueh-Lung Lu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wen Chen
- Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Sun-Zen Chen
- Center for Nanotechnology, Materials Science and Microsystem, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chang-Hua Liu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Po-Wen Chiu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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4
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Torsi R, Munson KT, Pendurthi R, Marques E, Van Troeye B, Huberich L, Schuler B, Feidler M, Wang K, Pourtois G, Das S, Asbury JB, Lin YC, Robinson JA. Dilute Rhenium Doping and its Impact on Defects in MoS 2. ACS NANO 2023; 17:15629-15640. [PMID: 37534591 DOI: 10.1021/acsnano.3c02626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2023]
Abstract
Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 ppm by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10×. Ab initio models indicate the origin of the reduction is an increase in the free-energy of sulfur-vacancy formation at the MoS2 growth-front when Re is introduced. Defect photoluminescence (PL) commonly seen in undoped MOCVD MoS2 is suppressed by 6× at 0.05 atomic percent (at. %) Re and completely quenched with 1 at. % Re. Furthermore, we find that Re-MoS2 transistors exhibit a 2× increase in drain current and carrier mobility compared to undoped MoS2, indicating that sulfur vacancy reduction improves carrier transport in the Re-MoS2. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Affiliation(s)
- Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kyle T Munson
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rahul Pendurthi
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Esteban Marques
- Imec, Leuven 3001, Belgium
- Department of Molecular Design and Synthesis, KU Leuven, Celestijnenlaan 200f - Postbox 2404, 3001 Leuven, Belgium
| | | | - Lysander Huberich
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Bruno Schuler
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Maxwell Feidler
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | | | - Saptarshi Das
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - John B Asbury
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City, 300093, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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5
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Liu X, Wang J, Lin Y, Zhou J, Liu Q, Yu W, Cai Y, Li X, Botcha VD, Rao T, Huang S. Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector. ACS OMEGA 2022; 7:48301-48309. [PMID: 36591144 PMCID: PMC9798488 DOI: 10.1021/acsomega.2c06480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light-mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re x Mo1-x S2, which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re x Mo1-x S2. The results show that both MoS2 and ReS2 peaks appear in the Re x Mo1-x S2 Raman diagram. Re x Mo1-x S2 is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re x Mo1-x S2 calculated using the first-principles theory suggests that the band gap of Re x Mo1-x S2 is larger than that of ReS2 and smaller than that of MoS2, which is consistent with the photoluminescence results. The thermal stability of the few layers of Re x Mo1-x S2 was evaluated using Raman temperature measurements. It is found that the thermal stability of Re x Mo1-x S2 is close to those of pure ReS2 and MoS2. The fabricated Re x Mo1-x S2 photodetector shows a high response rate of 7.46 A W-1 under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re x Mo1-x S2 as a future candidate in electronics and optoelectronics.
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Affiliation(s)
- Xinke Liu
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Jiangchuan Wang
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Yuheng Lin
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Jie Zhou
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Qiang Liu
- State
Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information
Technology, CAS, 865
Chang Ning Road, Shanghai200050, People’s Republic
of China
| | - Wenjie Yu
- State
Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information
Technology, CAS, 865
Chang Ning Road, Shanghai200050, People’s Republic
of China
| | - Yongqing Cai
- Joint
Key Laboratory of Ministry of Education, Institute of Applied Physics
and Materials Engineering, University of
Macau, Taipa, Macau999078, China
| | - Xiaohua Li
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - V. Divakar Botcha
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Tingke Rao
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Shuangwu Huang
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
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6
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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7
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Day PN, Pachter R, Nguyen KA. Calculated linear and nonlinear optical absorption spectra of phosphine-ligated gold clusters. Phys Chem Chem Phys 2022; 24:11234-11248. [DOI: 10.1039/d2cp01232d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Although prediction of optical excitations of ligated gold clusters by time-dependent density functional theory (TDDFT) is relatively well-established, limitations still exist, for example in the choice of the exchange-correlation functional....
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