Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced Emission

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy [Formula: see text] spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by [Formula: see text] spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and [Formula: see text] spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.

Room temperature optically detected magnetic resonance of single spins in GaN

High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect's ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.

Optically addressable spin defects coupled to bound states in the continuum metasurfaces

Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances, exceeding 102, leveraging quasi-bound states in the continuum (qBICs). Coupling between defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth and increased narrowband spin-readout efficiency. Our findings demonstrate a new class of metasurfaces for spin-defect-based technologies and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.

Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials

Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with a photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenide (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.

Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays

Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.

Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing

Negatively-charged boron vacancy centers ([Formula: see text]) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.

Coupling of MoS_{2} Excitons with Lattice Phonons and Cavity Vibrational Phonons in Hybrid Nanobeam Cavities

We report resonant Raman spectroscopy of neutral excitons X^{0} and intravalley trions X^{-} in hBN-encapsulated MoS_{2} monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS_{2} lattice phonons and X^{0}/X^{-} emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X^{0}-induced Raman scattering and a suppression for X^{-}-induced, and explain our findings as arising from the tripartite exciton-phonon-phonon coupling. The cavity vibrational phonons provide intermediate replica states of X^{0} for resonance conditions in the scattering of lattice phonons, thus enhancing the Raman intensity. In contrast, the tripartite coupling involving X^{-} is found to be much weaker, an observation explained by the geometry-dependent polarity of the electron and hole deformation potentials. Our results indicate that phononic hybridization between lattice and nanomechanical modes plays a key role in the excitonic photophysics and light-matter interaction in 2D-material nanophotonic systems.