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Li S, Sun Z, McLaughlin NJ, Sharmin A, Agarwal N, Huang M, Sung SH, Lu H, Yan S, Lei H, Hovden R, Wang H, Chen H, Zhao L, Du CR. Observation of stacking engineered magnetic phase transitions within moiré supercells of twisted van der Waals magnets. Nat Commun 2024; 15:5712. [PMID: 38977692 PMCID: PMC11231268 DOI: 10.1038/s41467-024-49942-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Accepted: 06/26/2024] [Indexed: 07/10/2024] Open
Abstract
Recent demonstrations of moiré magnetism, featuring exotic phases with noncollinear spin order in the twisted van der Waals (vdW) magnet chromium triiodide CrI3, have highlighted the potential of twist engineering of magnetic (vdW) materials. However, the local magnetic interactions, spin dynamics, and magnetic phase transitions within and across individual moiré supercells remain elusive. Taking advantage of a scanning single-spin magnetometry platform, here we report observation of two distinct magnetic phase transitions with separate critical temperatures within a moiré supercell of small-angle twisted double trilayer CrI3. By measuring temperature-dependent spin fluctuations at the coexisting ferromagnetic and antiferromagnetic regions in twisted CrI3, we explicitly show that the Curie temperature of the ferromagnetic state is higher than the Néel temperature of the antiferromagnetic one by ~10 K. Our mean-field calculations attribute such a spatial and thermodynamic phase separation to the stacking order modulated interlayer exchange coupling at the twisted interface of moiré superlattices.
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Affiliation(s)
- Senlei Li
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Zeliang Sun
- Department of Physics, the University of Michigan, Ann Arbor, MI, 48109, USA
| | - Nathan J McLaughlin
- Department of Physics, University of California, San Diego, La Jolla, San Diego, CA, 92093, USA
| | - Afsana Sharmin
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
| | - Nishkarsh Agarwal
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Mengqi Huang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Suk Hyun Sung
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, San Diego, CA, 92093, USA
| | - Shaohua Yan
- Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Hechang Lei
- Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Robert Hovden
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Hailong Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Hua Chen
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
- School of Advanced Materials Discovery, Colorado State University, Fort Collins, CO, 80523, USA
| | - Liuyan Zhao
- Department of Physics, the University of Michigan, Ann Arbor, MI, 48109, USA.
| | - Chunhui Rita Du
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
- Department of Physics, University of California, San Diego, La Jolla, San Diego, CA, 92093, USA.
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Hu C, Qian T, Ni N. Recent progress in MnBi 2nTe 3n+1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder. Natl Sci Rev 2024; 11:nwad282. [PMID: 38213523 PMCID: PMC10776370 DOI: 10.1093/nsr/nwad282] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 08/19/2023] [Accepted: 09/06/2023] [Indexed: 01/13/2024] Open
Abstract
The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.
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Affiliation(s)
- Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
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Liu P, Zhang Y, Li K, Li Y, Pu Y. Recent advances in 2D van der Waals magnets: Detection, modulation, and applications. iScience 2023; 26:107584. [PMID: 37664598 PMCID: PMC10470320 DOI: 10.1016/j.isci.2023.107584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2023] Open
Abstract
The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.
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Affiliation(s)
- Ping Liu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ying Zhang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
| | - Kehan Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yongde Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Pu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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Huang M, Green JC, Zhou J, Williams V, Li S, Lu H, Djugba D, Wang H, Flebus B, Ni N, Du CR. Layer-Dependent Magnetism and Spin Fluctuations in Atomically Thin van der Waals Magnet CrPS 4. NANO LETTERS 2023; 23:8099-8105. [PMID: 37656017 DOI: 10.1021/acs.nanolett.3c02129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling and layer-number dependent magnetic and electronic interactions, which promise to deliver previously unavailable merits to develop multifunctional microelectronic devices. As a further ingredient of this emerging topic, here we report nanoscale quantum sensing and imaging of the atomically thin vdW magnet chromium thiophosphate CrPS4, revealing its characteristic layer-dependent 2D static magnetism and dynamic spin fluctuations. We also show a large tunneling magnetoresistance in CrPS4-based spin filter vdW heterostructures. The excellent material stability and robust strategy against environmental degradation in combination with tailored magnetic properties highlight the potential of CrPS4 in developing state-of-the-art 2D spintronic devices for next-generation information technologies.
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Affiliation(s)
- Mengqi Huang
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Jazmine C Green
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Jingcheng Zhou
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Violet Williams
- Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, United States
| | - Senlei Li
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
| | - Dziga Djugba
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Hailong Wang
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Benedetta Flebus
- Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, United States
| | - Ni Ni
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Chunhui Rita Du
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, California 92093, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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Huang M, Sun Z, Yan G, Xie H, Agarwal N, Ye G, Sung SH, Lu H, Zhou J, Yan S, Tian S, Lei H, Hovden R, He R, Wang H, Zhao L, Du CR. Revealing intrinsic domains and fluctuations of moiré magnetism by a wide-field quantum microscope. Nat Commun 2023; 14:5259. [PMID: 37644000 PMCID: PMC10465594 DOI: 10.1038/s41467-023-40543-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2022] [Accepted: 08/01/2023] [Indexed: 08/31/2023] Open
Abstract
Moiré magnetism featured by stacking engineered atomic registry and lattice interactions has recently emerged as an appealing quantum state of matter at the forefront of condensed matter physics research. Nanoscale imaging of moiré magnets is highly desirable and serves as a prerequisite to investigate a broad range of intriguing physics underlying the interplay between topology, electronic correlations, and unconventional nanomagnetism. Here we report spin defect-based wide-field imaging of magnetic domains and spin fluctuations in twisted double trilayer (tDT) chromium triiodide CrI3. We explicitly show that intrinsic moiré domains of opposite magnetizations appear over arrays of moiré supercells in low-twist-angle tDT CrI3. In contrast, spin fluctuations measured in tDT CrI3 manifest little spatial variations on the same mesoscopic length scale due to the dominant driving force of intralayer exchange interaction. Our results enrich the current understanding of exotic magnetic phases sustained by moiré magnetism and highlight the opportunities provided by quantum spin sensors in probing microscopic spin related phenomena on two-dimensional flatland.
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Affiliation(s)
- Mengqi Huang
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Zeliang Sun
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Gerald Yan
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA
| | - Hongchao Xie
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Nishkarsh Agarwal
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Gaihua Ye
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, USA
| | - Suk Hyun Sung
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA
| | - Jingcheng Zhou
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Shaohua Yan
- Laboratory for Neutron Scattering, and Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Shangjie Tian
- Laboratory for Neutron Scattering, and Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Hechang Lei
- Laboratory for Neutron Scattering, and Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Robert Hovden
- Department of Material Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Rui He
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, 79409, USA
| | - Hailong Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, CA, 92093, USA
| | - Liuyan Zhao
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA.
| | - Chunhui Rita Du
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA.
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, CA, 92093, USA.
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Machado F, Demler EA, Yao NY, Chatterjee S. Quantum Noise Spectroscopy of Dynamical Critical Phenomena. PHYSICAL REVIEW LETTERS 2023; 131:070801. [PMID: 37656851 DOI: 10.1103/physrevlett.131.070801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 06/12/2023] [Indexed: 09/03/2023]
Abstract
The transition between distinct phases of matter is characterized by the nature of fluctuations near the critical point. We demonstrate that noise spectroscopy can not only diagnose the presence of a phase transition, but can also determine fundamental properties of its criticality. In particular, by analyzing a scaling collapse of the decoherence profile, one can directly extract the critical exponents of the transition and identify its universality class. Our approach naturally captures the presence of conservation laws and distinguishes between classical and quantum phase transitions. In the context of quantum magnetism, our proposal complements existing techniques and provides a novel toolset optimized for interrogating two-dimensional magnetic materials.
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Affiliation(s)
- Francisco Machado
- ITAMP, Harvard-Smithsonian Center for Astrophysics, Cambridge, Massachusetts 02138, USA
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Eugene A Demler
- Institute for Theoretical Physics, ETH Zurich, 8093 Zurich, Switzerland
| | - Norman Y Yao
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Shubhayu Chatterjee
- Department of Physics, University of California, Berkeley, California 94720, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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