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Wang X, Wei Y, Kuang Z, Wang X, Dai M, Li X, Lu R, Liu W, Chang J, Ma C, Huang W, Peng Q, Wang J. The origins of dual-peak emission and anomalous exciton decay in 2D Sn-based perovskites. J Chem Phys 2024; 161:014303. [PMID: 38953446 DOI: 10.1063/5.0200362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Accepted: 06/04/2024] [Indexed: 07/04/2024] Open
Abstract
Two-dimensional (2D) Sn-based perovskites exhibit significant potential in diverse optoelectronic applications, such as on-chip lasers and photodetectors. Yet, the underlying mechanism behind the frequently observed dual-peak emission in 2D Sn-based perovskites remains a subject of intense debate, and there is a lack of research on the carrier dynamics in these materials. In this study, we investigate these issues in a representative 2D Sn-based perovskite, namely, PEA2SnI4, through temperature-, excitation intensity-, angle-, and time-dependent photoluminescence studies. The results indicate that the high- and low-energy peaks originate from in-face and out-of-face dipole transitions, respectively. In addition, we observe an anomalous increase in the non-radiative recombination rate as temperature decreases. After ruling out enhanced electron-phonon coupling and Auger recombination as potential causes of the anomalous carrier dynamics, we propose that the significantly increased exciton binding energy (Eb) plays a decisive role. The increased Eb arises from enhanced electronic localization, a consequence of weakened lattice distortion at low temperatures, as confirmed by first-principles calculations and temperature-dependent x-ray diffraction measurements. These findings offer valuable insights into the electronic processes in the unique 2D Sn-based perovskites.
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Affiliation(s)
- Xinrui Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yingqiang Wei
- The 58th Research Institute of China Electronics Technology Group 217Corporation, Wuxi, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xing Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Mian Dai
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xiuyong Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Runqing Lu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Wang Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chao Ma
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) and School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
- School of Materials Science and Engineering, Changzhou University, Changzhou, China
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, China
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Wang X, Wang C, Tao C, Kuang Z, Wang X, Xu L, Wei Y, Peng Q, Huang W, Wang J. Unraveling the Origin of Long-Lifetime Emission in Low-Dimensional Copper Halides via a Magneto-optical Study. NANO LETTERS 2023; 23:11860-11865. [PMID: 38085911 DOI: 10.1021/acs.nanolett.3c03874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
The origin of the long lifetime of self-trapped exciton emission in low-dimensional copper halides is currently the subject of extensive debate. In this study, we address this issue in a prototypical zero-dimensional copper halide, Cs2(C18)2Cu2I4-DMSO, through magneto-optical studies at low temperatures down to 0.2 K. Our results exclude spin-forbidden dark states and indirect phonon-assisted recombination as the origin of the long photoluminescence lifetime. Instead, we propose that the minimal Franck-Condon factor of the radiative transition from excited states to the ground state is the decisive factor, based on the transition probability analysis. Our findings offer insights into the electronic processes in low-dimensional copper halides and have the potential to advance the application of these distinctive materials in optoelectronics.
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Affiliation(s)
- Xing Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Chengcheng Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Cong Tao
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Xinrui Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Yingqiang Wei
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- The 58th Research Institute of China Electronics Technology Group 217 Corporation, Wuxi, Jiangsu 214000, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- Strait Laboratory of Flexible Electronics, Fuzhou, Fujian 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics, Institute of Advanced Materials and School of Flexible Electronics (Future Technologies), Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu 211816, China
- Changzhou University, 21 Middle Gehu Road, Changzhou 213164, China
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Biega RI, Chen Y, Filip MR, Leppert L. Chemical Mapping of Excitons in Halide Double Perovskites. NANO LETTERS 2023; 23:8155-8161. [PMID: 37656044 PMCID: PMC10510582 DOI: 10.1021/acs.nanolett.3c02285] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/25/2023] [Indexed: 09/02/2023]
Abstract
Halide double perovskites comprise an emerging class of semiconductors with tremendous chemical and electronic diversity. While their band structure features can be understood from frontier-orbital models, chemical intuition for optical excitations remains incomplete. Here, we use ab initio many-body perturbation theory within the GW and the Bethe-Salpeter equation approach to calculate excited-state properties of a representative range of Cs2BB'Cl6 double perovskites. Our calculations reveal that double perovskites with different combinations of B and B' cations display a broad variety of electronic band structures and dielectric properties and form excitons with binding energies ranging over several orders of magnitude. We correlate these properties with the orbital-induced anisotropy of charge-carrier effective masses and the long-range behavior of the dielectric function by comparing them with the canonical conditions of the Wannier-Mott model. Furthermore, we derive chemically intuitive rules for predicting the nature of excitons in halide double perovskites using computationally inexpensive density functional theory calculations.
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Affiliation(s)
- Raisa-Ioana Biega
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
| | - Yinan Chen
- Department
of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom
| | - Marina R. Filip
- Department
of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom
| | - Linn Leppert
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
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Shinde A, Rajput PK, Makhija U, Tanwar R, Mandal P, Nag A. Emissive Dark Excitons in Monoclinic Two-Dimensional Hybrid Lead Iodide Perovskites. NANO LETTERS 2023; 23:6985-6993. [PMID: 37487113 DOI: 10.1021/acs.nanolett.3c01627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Typically, bright excitons (XB) emit light in two-dimensional (2D) layered hybrid perovskites. There are also dark excitons (XD), for which radiative recombination is spin-forbidden. Application of a magnetic field can somewhat relax the spin-rule, yielding XD emission. Can we obtain XD light emission in the absence of a magnetic field? Indeed, we observe unusually intense XD emission at ∼7 K for (Rac-MBA)2PbI4, (Rac-4-Br-MBA)2PbI4, and (R-4-Br-MBA)2PbI4 (Rac-MBA: racemic methylbenzylammonium), which crystallize in a lower symmetry monoclinic phase. For comparison, orthorhombic (R-MBA)2PbI4 does not exhibit XD emission. XD has a lower energy than XB, with energy difference ΔE. In monoclinic samples, ΔE ∼ 20 meV is large enough to suppress the thermal excitation of XD to XB, at temperatures <30 K. Consequently, XD recombines by emitting light with a long lifetime (∼205 ns). At higher temperatures, the emission switches to the spin-allowed XB (lifetime < 1 ns).
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Affiliation(s)
- Aparna Shinde
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Parikshit Kumar Rajput
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Urmila Makhija
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Riteeka Tanwar
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Pankaj Mandal
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Angshuman Nag
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
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Laitz M, Kaplan AEK, Deschamps J, Barotov U, Proppe AH, García-Benito I, Osherov A, Grancini G, deQuilettes DW, Nelson KA, Bawendi MG, Bulović V. Uncovering temperature-dependent exciton-polariton relaxation mechanisms in hybrid organic-inorganic perovskites. Nat Commun 2023; 14:2426. [PMID: 37105984 PMCID: PMC10140020 DOI: 10.1038/s41467-023-37772-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Accepted: 03/30/2023] [Indexed: 04/29/2023] Open
Abstract
Hybrid perovskites have emerged as a promising material candidate for exciton-polariton (polariton) optoelectronics. Thermodynamically, low-threshold Bose-Einstein condensation requires efficient scattering to the polariton energy dispersion minimum, and many applications demand precise control of polariton interactions. Thus far, the primary mechanisms by which polaritons relax in perovskites remains unclear. In this work, we perform temperature-dependent measurements of polaritons in low-dimensional perovskite wedged microcavities achieving a Rabi splitting of [Formula: see text] = 260 ± 5 meV. We change the Hopfield coefficients by moving the optical excitation along the cavity wedge and thus tune the strength of the primary polariton relaxation mechanisms in this material. We observe the polariton bottleneck regime and show that it can be overcome by harnessing the interplay between the different excitonic species whose corresponding dynamics are modified by strong coupling. This work provides an understanding of polariton relaxation in perovskites benefiting from efficient, material-specific relaxation pathways and intracavity pumping schemes from thermally brightened excitonic species.
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Affiliation(s)
- Madeleine Laitz
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Alexander E K Kaplan
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jude Deschamps
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ulugbek Barotov
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Andrew H Proppe
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Inés García-Benito
- Department of Organic Chemistry, Universidad Complutense de Madrid, Madrid, Spain
| | - Anna Osherov
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Giulia Grancini
- Department of Chemistry & INSTM, University of Pavia, Pavia, Italy
| | - Dane W deQuilettes
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Keith A Nelson
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Moungi G Bawendi
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Vladimir Bulović
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
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Diroll BT, Banerjee P, Shevchenko EV. Optical anisotropy of CsPbBr 3 perovskite nanoplatelets. NANO CONVERGENCE 2023; 10:18. [PMID: 37186268 PMCID: PMC10130288 DOI: 10.1186/s40580-023-00367-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Accepted: 04/09/2023] [Indexed: 05/17/2023]
Abstract
The two-dimensional CsPbBr3 nanoplatelets have a quantum well electronic structure with a band gap tunable with sample thicknesses in discreet steps based upon the number of monolayers. The polarized optical properties of CsPbBr3 nanoplatelets are studied using fluorescence anisotropy and polarized transient absorption spectroscopies. Polarized spectroscopy shows that they have absorption and emission transitions which are strongly plane-polarized. In particular, photoluminescence excitation and transient absorption measurements reveal a band-edge polarization approaching 0.1, the limit of isotropic two-dimensional ensembles. The degree of anisotropy is found to depend on the thickness of the nanoplatelets: multiple measurements show a progressive decrease in optical anisotropy from 2 to 5 monolayer thick nanoplatelets. In turn, larger cuboidal CsPbBr3 nanocrystals, are found to have consistently positive anisotropy which may be attributed to symmetry breaking from ideal perovskite cubes. Optical measurements of anisotropy are described with respect to the theoretical framework developed to describe exciton fine structure in these materials. The observed planar absorption and emission are close to predicted values at thinner nanoplatelet sizes and follow the predicted trend in anisotropy with thickness, but with larger anisotropy than theoretical predictions. Dominant planar emission, albeit confined to the thinnest nanoplatelets, is a valuable attribute for enhanced efficiency of light-emitting devices.
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Affiliation(s)
- Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60438, USA.
| | - Progna Banerjee
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60438, USA
| | - Elena V Shevchenko
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60438, USA
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Posmyk K, Dyksik M, Surrente A, Zalewska K, Śmiertka M, Cybula E, Paritmongkol W, Tisdale WA, Plochocka P, Baranowski M. Fine Structure Splitting of Phonon-Assisted Excitonic Transition in (PEA) 2PbI 4 Two-Dimensional Perovskites. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1119. [PMID: 36986013 PMCID: PMC10053047 DOI: 10.3390/nano13061119] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/12/2023] [Accepted: 03/17/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional van der Waals materials exhibit particularly strong excitonic effects, which causes them to be an exceptionally interesting platform for the investigation of exciton physics. A notable example is the two-dimensional Ruddlesden-Popper perovskites, where quantum and dielectric confinement together with soft, polar, and low symmetry lattice create a unique background for electron and hole interaction. Here, with the use of polarization-resolved optical spectroscopy, we have demonstrated that the simultaneous presence of tightly bound excitons, together with strong exciton-phonon coupling, allows for observing the exciton fine structure splitting of the phonon-assisted transitions of two-dimensional perovskite (PEA)2PbI4, where PEA stands for phenylethylammonium. We demonstrate that the phonon-assisted sidebands characteristic for (PEA)2PbI4 are split and linearly polarized, mimicking the characteristics of the corresponding zero-phonon lines. Interestingly, the splitting of differently polarized phonon-assisted transitions can be different from that of the zero-phonon lines. We attribute this effect to the selective coupling of linearly polarized exciton states to non-degenerate phonon modes of different symmetries resulting from the low symmetry of (PEA)2PbI4 lattice.
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Affiliation(s)
- Katarzyna Posmyk
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Mateusz Dyksik
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Alessandro Surrente
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Katarzyna Zalewska
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Maciej Śmiertka
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Ewelina Cybula
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | | | - William A. Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Paulina Plochocka
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
- Laboratoire National des Champs Magnétiques Intenses, EMFL, CNRS UPR 3228, Université Toulouse, Université Toulouse 3, INSA-T, 31400 Toulouse, France
| | - Michał Baranowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
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