Atomic Layer Deposition from Dissolved Precursors

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Solution-based atomic layer deposition (sALD) processes enable the preparation of thin films on nanostructured surfaces while controlling the film thickness down to a monolayer and preserving the homogeneity of the film. In sALD, a similar operation principle as in gas-phase ALD is used, however, with a broader range of accessible materials and without requiring expensive vacuum equipment. In this work, a sALD process was developed to prepare CuSCN on a Si substrate using the precursors CuOAc and LiSCN. The film growth was studied by ex situ atomic force microscopy (AFM), analyzed by a neural network (NN) approach, ellipsometry, and a newly developed in situ infrared (IR) spectroscopy experiment in combination with density functional theory (DFT). In the self-limiting sALD process, CuSCN grows on top of an initially formed two-dimensional (2D) layer as three-dimensional spherical nanoparticles with an average size of ∼25 nm and a narrow particle size distribution. With increasing cycle number, the particle density increases and larger particles form via Ostwald ripening and coalescence. The film grows preferentially in the β-CuSCN phase. Additionally, a small fraction of the α-CuSCN phase and defect sites form.

Solution Atomic Layer Deposition of Smooth, Continuous, Crystalline Metal-Organic Framework Thin Films

For the first time, a procedure has been established for the growth of surface-anchored metal-organic framework (SURMOF) copper(II) benzene-1,4-dicarboxylate (Cu-BDC) thin films of thickness control with single molecule accuracy. For this, we exploit the novel method solution atomic layer deposition (sALD). The sALD growth rate has been determined at 4.5 Å per cycle. The compact and dense SURMOF films grown at room temperature by sALD possess a vastly superior film thickness uniformity than those deposited by conventional solution-based techniques, such as dipping and spraying while featuring clear crystallinity from 100 nm thickness. The highly controlled layer-by-layer growth mechanism of sALD proves crucial to prevent unwanted side reactions such as Ostwald ripening or detrimental island growth, ensuring continuous Cu-BDC film coverage. This successful demonstration of sALD-grown compact continuous Cu-BDC SURMOF films is a paradigm change and provides a key advancement enabling a multitude of applications that require continuous and ultrathin coatings while maintaining tight film thickness specifications, which were previously unattainable with conventional solution-based growth methods.

Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated reactions between a precursor and reactant vacuum conditions. A typical ALD reaction consists of the first half-reaction of the precursor and the second half-reaction of the counter reactant, in which the terminal groups on the surface change after each half-reaction. In this study, the effects of counter reactants on the surface termination and growth characteristics of ALD HfO₂ thin films formed on Si substrates using tetrakis(dimethylamino)-hafnium (TDMAH) as a precursor were investigated. Two counter reactants, H₂O and O₃, were individually employed, as well as in combination with consecutive exposure by H₂O-O₃ and O₃-H₂O. The film growth behaviors and properties differed when the sequence of exposure of the substrate to the reactants was varied. Based on X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) simulation, the changes are attributed to the effects of the surface terminations formed from different counter reactant combinations. The knowledge from this work could provide insight for precisely tuning the growth and properties of ALD films.

HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

As a member of the two-dimensional metal dichalcogenide family, HfS2 has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(IV) and H2S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy. In the saturated regime, the growth rate depends on the substrate nature and is between 0.4 and 0.6 Å per sALD cycle. This growth rate determined at room temperature is lower than with the gALD process reported at 100 °C recently. At those low deposition temperatures, the films remain in an amorphous state. This success in sALD expands the range of material classes available by the new method, adding transition metal dichalcogenides to the list containing oxides, cubic sulfides, hydrides, and organics so far. It promises to overcome the precursor constraints associated with the traditional gALD method, in particular the volatility requirement.

Liquid atomic layer deposition as emergent technology for the fabrication of thin films

Atomic layer deposition (ALD) is widely recognized as a unique chemical vapor deposition technique for the fabrication of thin films with high conformality and precise thickness control down to the Ångstrom level, thereby allowing surface and interface nanoengineering. However, several challenges such as the availability of chemical precursors for ALD and the use of vacuum conditions have hampered its widespread adoption and scalability for mass production. In recent years, the liquid phase homolog of ALD, liquid atomic layer deposition (LALD), has emerged as a much simpler and versatile strategy to overcome some of the current constraints of ALD. This perspective describes the different strategies that have been explored to achieve conformality and sub-nanometer thickness control with LALD, as well as the current challenges it faces to become a part of the thin-film community toolbox, in particular its automation and compatibility with different types of substrates. In this regard, the important role of LALD as complementary technology to ALD is emphasized by comparing the different pathways to deposit the same material and the precursors used to do so.

Visible light-induced antibacterial and osteogenic cell proliferation properties of hydrogenated TiO2 nanotubes/Ti foil composite

We successfully fabricated the hydrogenated TiO₂ nanotubes/Ti foil (H-TNTs/f-Ti) composite via one-step anodization and two-step annealing. H-TNTs/f-Ti composite had a higher visible light-induced photoelectric response and more hydroxyl functional groups compared with Ti foil and unmodified TiO₂ nanotubes/Ti foil composite, which contributed to limiting the proliferation of Streptococcus mutans and Porphyromonas gingivalis, promoting the proliferation of MC3T3-E1 cell on the hydroxylated surface, and improving the biocompatibility with osteogenic cells. Our study provides a simple and effective method for significantly improving dental implant efficacy.

Solution-mediated nanometric growth of α-Fe2O3 with electrocatalytic activity for water oxidation

This paper describes a simple, low-temperature, and environmentally friendly aqueous route for the layer-by-layer nanometric growth of crystalline α-Fe2O3. The formation mechanism involves alternative sequences of the electrostatic adsorption of Fe2+ ions on the surface and the subsequent onsite oxidation to Fe3+. A combination analysis of X-ray diffraction, scanning electron microscopy, UV-Vis spectroscopy, and X-ray photoelectron spectroscopy revealed that α-Fe2O3 is directly formed without post-growth annealing via designed chemical reactions with a growth rate of ca. 1.7 nm per deposition cycle. The obtained α-Fe2O3 layer exhibits electrocatalytic activity for water oxidation and, at the same time, insignificant photo-electrocatalytic response, indicating its defective nature. The electrocatalytic activity was tailored by annealing up to 500 °C in air, where thermal diffusion of Sn4+ into the α-Fe2O3 lattice from the substrate probably provides an increased electrical conductivity. The subsequent surface-modification with Ni(OH)2 lowers the overpotential (250 mV at 0.5 mA cm-2) in a 1 M KOH solution. These findings open direct growth pathways to functional metal oxide nanolayers via liquid phase atomic layer deposition.

Designing Nanoparticles and Nanoalloys for Gas-Phase Catalysis with Controlled Surface Reactivity Using Colloidal Synthesis and Atomic Layer Deposition

Supported nanoparticles are commonly applied in heterogeneous catalysis. The catalytic performance of these solid catalysts is, for a given support, dependent on the nanoparticle size, shape, and composition, thus necessitating synthesis techniques that allow for preparing these materials with fine control over those properties. Such control can be exploited to deconvolute their effects on the catalyst's performance, which is the basis for knowledge-driven catalyst design. In this regard, bottom-up synthesis procedures based on colloidal chemistry or atomic layer deposition (ALD) have proven successful in achieving the desired level of control for a variety of fundamental studies. This review aims to give an account of recent progress made in the two aforementioned synthesis techniques for the application of controlled catalytic materials in gas-phase catalysis. For each technique, the focus goes to mono- and bimetallic materials, as well as to recent efforts in enhancing their performance by embedding colloidal templates in porous oxide phases or by the deposition of oxide overlayers via ALD. As a recent extension to the latter, the concept of area-selective ALD for advanced atomic-scale catalyst design is discussed.

Atomic Layer Deposition on Dispersed Materials in Liquid Phase by Stoichiometrically Limited Injections

Atomic layer deposition (ALD) is a well-established vapor-phase technique for depositing thin films with high conformality and atomically precise control over thickness. Its industrial development has been largely confined to wafers and low-surface-area materials because deposition on high-surface-area materials and powders remains extremely challenging. Challenges with such materials include long deposition times, extensive purging cycles, and requirements for large excesses of precursors and expensive low-pressure equipment. Here, a simple solution-phase deposition process based on subsequent injections of stoichiometric quantities of precursor is performed using common laboratory synthesis equipment. Precisely measured precursor stoichiometries avoid any unwanted reactions in solution and ensure layer-by-layer growth with the same precision as gas-phase ALD, without any excess precursor or purging required. Identical coating qualities are achieved when comparing this technique to Al₂ O₃ deposition by fluidized-bed reactor ALD (FBR-ALD). The process is easily scaled up to coat >150 g of material using the same inexpensive laboratory glassware without any loss in coating quality. This technique is extended to sulfides and phosphates and can achieve coatings that are not possible using classic gas-phase ALD, including the deposition of phosphates with inexpensive but nonvolatile phosphoric acid.

Block-Co-polymer-Assisted Synthesis of All Inorganic Highly Porous Heterostructures with Highly Accessible Thermally Stable Functional Centers

Here, we propose a simple approach for the design of highly porous multicomponent heterostructures by infiltration of block-co-polymer templates with inorganic precursors in swelling solvents followed by gas-phase sequential infiltration synthesis and thermal annealing. This approach can prepare conformal coatings, free-standing membranes, and powders consisting of uniformly sized metal or metal oxide nanoparticles (NPs) well dispersed in a porous oxide matrix. We employed this new, versatile synthetic concept to synthesize catalytically active heterostructures of uniformly dispersed ∼4.3 nm PdO nanoparticles accessible through three-dimensional pore networks of the alumina support. Importantly, such materials reveal high resistance against sintering at 800 °C, even at relatively high loadings of NPs (∼10 wt %). At the same time, such heterostructures enable high mass transport due to highly interconnected nature of the pores. The surface of synthesized nanoparticles in the porous matrix is highly accessible, which enables their good catalytic performance in methane and carbon monoxide oxidation. In addition, we demonstrate that this approach can be utilized to synthesize heterostructures consisting of different types of NPs on a highly porous support. Our results show that swelling-based infiltration provides a promising route toward the robust and scalable synthesis of multicomponent structures.

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.

Decomposition of Large Cu Crystals into Ultrasmall Particles Using Chemical Vapor Deposition and Their Application in Selective Propylene Oxidation

In this work, we report a novel application of chemical vapor deposition (CVD) in which the calcination and reduction of Cu(thd)₂ deposited onto 4.9 wt % Cu/SiO₂ induces significant decomposition of 28 nm crystalline Cu into ultrasmall ∼2 nm particles (5.1 wt % Cu/SiO₂). The Cu loading slightly increased, but the particle size dramatically decreased. The deposition of Cu(thd)₂ onto the Cu surface can initially affect the size reduction of the metallic Cu particles due to charge transfer between Cu(thd)₂ and the Cu surface. Thermal treatments, including calcination in air and reduction in H₂, can further influence the Cu particle decomposition. The mechanism of change in the Cu particle decomposition was investigated by a variety of experiments, such as X-ray diffraction and in situ X-ray absorption spectroscopy. CVD treatment of Cu/SiO₂ can create Cu-rich sites, which effectively enhance the conversion and acrolein yield in selective propylene oxidation. The intermediate associated with propylene oxidation on the Cu catalysts was also examined by IR spectroscopy.