Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification

Plasmonic Bound States in the Continuum Metasurface-Semiconductor-Metal Architecture Enables Efficient Hot-Electron-Based Photodetector

Plasmonic hot-electron-based photodetectors (HEB-PDs) have received widespread attention for their ability to realize effective carrier collection under sub-bandgap illumination. However, due to the low hot electron emission probability, most of the existing HEB-PDs exhibit poor responsivity, which significantly restricts their practical applications. Here, by employing the binary-pore anodic alumina oxide template technique, we proposed a compact plasmonic bound state in continuum metasurface-semiconductor-metal-based (BIC M-S-M) HEB-PD. The symmetry-protected BIC can manipulate a strong gap surface plasmon in the stacked M-S-M structure, which effectively enhances light-matter interactions and improves the photoresponse of the integrated device. Notably, the optimal M-S-M HEB-PD with near-unit absorption (∼90%) around 800 nm delivers a responsivity of 5.18 A/W and an IPCE of 824.23% under 780 nm normal incidence (1 V external bias). Moreover, the ultrathin feature of BIC M-S-M (∼150 nm) on the flexible substrate demonstrates excellent stability under a wide range of illumination angles from -40° to 40° and at the curvature surface from 0.05 to 0.13 mm-1. The proposed plasmonic BIC strategy is very promising for many other hot-electron-related fields, such as photocatalysis, biosensing, imaging, and so on.

Circular polarization sensitive opto-neuromorphic operation at plasmonic hot electron transistor using chiral gold nanoparticles

Opto-neuromorphic operation is critical for biological system to recognize the visual objects and mimicking such operation is important for artificial prosthesis as well as machine vision system for industrial applications. To sophisticatedly mimic biological system, regulation of learning and memorizing efficiency is needed, however engineered synthetic platform has been lack of controllability, which makes huge gap between biological system and synthetic platform. Here we demonstrated controllable learning and memorizing opto-neuromorphic operation at plasmonic hot electron transistor. Especially, circularly polarized light (CPL) sensitive synaptic characteristics and learning experience capability are enabled by incorporating chiral plasmonic nanoparticle. Furthermore, gate voltage gives rise to controllable neuromorphic operation due to hot electron injection and trapping effect, resulting in high remaining synaptic weight of ∼70% at negative gate voltage under CPL excitation. We believe that this discovery makes significant leap toward on-demand in-sensor computing as well as toward bio-realistic device.

Circularly polarized light-sensitive, hot electron transistor with chiral plasmonic nanoparticles

The quantitative detection of circularly polarized light (CPL) is necessary in next-generation optical communication carrying high-density information and in phase-controlled displays exhibiting volumetric imaging. In the current technology, multiple pixels of different wavelengths and polarizers are required, inevitably resulting in high loss and low detection efficiency. Here, we demonstrate a highly efficient CPL-detecting transistor composed of chiral plasmonic nanoparticles with a high Khun's dissymmetry (g-factor) of 0.2 and a high mobility conducting oxide of InGaZnO. The device successfully distinguished the circular polarization state and displayed an unprecedented photoresponsivity of over 1 A/W under visible CPL excitation. This observation is mainly attributed to the hot electron generation in chiral plasmonic nanoparticles and to the effective collection of hot electrons in the oxide semiconducting transistor. Such characteristics further contribute to opto-neuromorphic operation and the artificial nervous system based on the device successfully performs image classification work. We anticipate that our strategy will aid in the rational design and fabrication of a high-performance CPL detector and opto-neuromorphic operation with a chiral plasmonic structure depending on the wavelength and circular polarization state.

Theory of Plasmonic Hot-Carrier Generation and Relaxation

Hot-carrier (HC) generation from (localized) surface plasmon decay has recently attracted much attention due to its promising applications in physical, chemical, materials, and energy science. However, the detailed mechanisms of plasmonic HC generation, relaxation, and trapping are less studied. In this work, we developed and applied a quantum-mechanical model and coupled master equation method to study the generation of HCs from plasmon decay and their following relaxation processes with different mechanisms treated on equal footing. First, a quantum-mechanical model for HC generation is developed. Its connection to existing semiclassical models and time-dependent density functional theory (TDDFT) is discussed. Second, the relaxation and lifetimes of HCs are investigated in the presence of electron-electron and electron-phonon interactions. A GW-like approximation is introduced to account for the electron-electron scattering. The numerical simulations on the Jellium nanoparticles with a size up to 1.6 nm demonstrate the electron-electron scattering and electron-phonon scattering dominate different time scale in the relaxation dynamics. We also generalize the model to study the extraction of HCs to attached molecules. The quantum yield of extracting HCs for other applications is found to be size-dependent. In general, the smaller size of NP improves the quantum yield, which is in agreement with recent experimental measurements. Even though we demonstrate this newly developed theoretical formalism with Jellium model, the theory applies to any other atomistic models.

Plasmonic hot electrons for sensing, photodetection, and solar energy applications: A perspective

In plasmonic metals, surface plasmon resonance decays and generates hot electrons and hot holes through non-radiative Landau damping. These hot carriers are highly energetic, which can be modulated by the plasmonic material, size, shape, and surrounding dielectric medium. A plasmonic metal nanostructure, which can absorb incident light in an extended spectral range and transfer the absorbed light energy to adjacent molecules or semiconductors, functions as a "plasmonic photosensitizer." This article deals with the generation, emission, transfer, and energetics of plasmonic hot carriers. It also describes the mechanisms of hot electron transfer from the plasmonic metal to the surface adsorbates or to the adjacent semiconductors. In addition, this article highlights the applications of plasmonic hot electrons in photodetectors, photocatalysts, photoelectrochemical cells, photovoltaics, biosensors, and chemical sensors. It discusses the applications and the design principles of plasmonic materials and devices.

Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching I_ON/I_OFF ratio of approximately 10⁵. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10⁻⁷ A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

Cu2O-Au nanowire field-effect phototransistor for hot carrier transfer enhanced photodetection

In metal-semiconductor hybrid nanostructures, metal absorbs incident photons and generates hot carriers. The hot carriers are injected into the adjacent semiconductor and subsequently contribute to photocurrent. This process increases the conversion efficiency of optoelectronic devices and provides a new path of photodetectors. In this work, we report an enhanced photodetector by hot holes transfer, which is based on Au nanoparticles decorated p-type Cu₂O nanowires. The photodetector achieves an enhanced photo-responsivity up to 0.314 A W^-1, a higher detectivity of 3.7 × 10¹⁰ Jones. The response time and external quantum efficiency of the Cu₂O-Au nanowires photodetector are 3.7 times faster and 18.2 times higher than that of the Cu₂O nanowires, respectively. The findings indicate that Cu₂O-Au nanowires would be a promising candidate in developing novel plasmonic hot carrier devices.

Field-effect transistor based on surface plasmon polaritons

We investigate the working mechanism of a plasmon field-effect transistor (FET) based on the modulation of surface plasmon polariton (SPP) flow by varying an external electric field. SPP flow propagates at the surface of a metal strip waveguide embedded in a dielectric medium. The external electric field is applied to the metal electrode located under the isolated metal nanoplate placed in the middle of the strip waveguide. In this case, a signal on the control electrode changes the permittivity of the near-surface layer of the nanoplate. Thus, the control signal modulates the intensity of the SPP signal transmitted at the surface of the strip waveguide.

Plasmonic Hot-Carrier-Mediated Tunable Photochemical Reactions

Hot-carrier generation from surface plasmon decay has found applications in many branches of physics, chemistry, materials science, and energy science. Recent reports demonstrated that the hot carriers generated from plasmon decay in nanoparticles can transfer to attached molecules and drive photochemistry which was thought impossible previously. In this work, we have computationally explored the atomic-scale mechanism of a plasmonic hot-carrier-mediated chemical process, H₂ dissociation. Numerical simulations demonstrate that, after photoexcitation, hot carriers transfer to the antibonding state of the H₂ molecule from the nanoparticle, resulting in a repulsive-potential-energy surface and H₂ dissociation. This process occurs when the molecule is close to a single nanoparticle. However, if the molecule is located at the center of the gap in a plasmonic dimer, dissociation is suppressed due to sequential charge transfer, which efficiently reduces occupation in the antibonding state and, in turn, reduces dissociation. An asymmetric displacement of the molecule in the gap breaks the symmetry and restores dissociation when the additional charge transfer is significantly suppressed. Thus, these models demonstrate the possibility of structurally tunable photochemistry via plasmonic hot carriers.

Efficient broadband energy detection from the visible to near-infrared using a plasmon FET

Plasmon based field effect transistors (FETs) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect incident light and amplify it by coupling to resonant plasmonic modes thus improving selectivity and signal to noise ratio. The spectral responses can be tailored both through optimization of nanostructure geometry as well as constitutive materials. In this paper, we studied various plasmonic nanostructures using gold for a wideband spectral response from visible to near-infrared. We show, using empirical data and simulation results, that detection loss exponentially increases as the volume of metal nanostructure increases and also a limited spectral response is possible using gold nanostructures in a plasmon to electric conversion device. Finally, we demonstrate a plasmon FET that offers a broadband spectral response from visible to telecommunication wavelengths.

A Centimeter-Scale Inorganic Nanoparticle Superlattice Monolayer with Non-Close-Packing and its High Performance in Memory Devices

Due to the near-field coupling effect, non-close-packed nanoparticle (NP) assemblies with tunable interparticle distance (d) attract great attention and show huge potential applications in various functional devices, e.g., organic nano-floating-gate memory (NFGM) devices. Unfortunately, the fabrication of device-scale non-close-packed 2D NPs material still remains a challenge, limiting its practical applications. Here, a facile yet robust "rapid liquid-liquid interface assembly" strategy is reported to generate a non-close-packed AuNP superlattice monolayer (SM) on a centimeter scale for high-performance pentacene-based NFGM. The d and hence the surface plasmon resonance spectra of SM can be tailored by adjusting the molecular weight of tethered polymers. Precise control over the d value allows the successful fabrication of photosensitive NFGM devices with highly tunable performances from short-term memory to nonvolatile data storage. The best performing nonvolatile memory device shows remarkable 8-level (3-bit) storage and a memory ratio over 10⁵ even after 10 years compared with traditional devices with a AuNP amorphous monolayer. This work provides a new opportunity to obtain large area 2D NPs materials with non-close-packed structure, which is significantly meaningful to microelectronic, photovoltaics devices, and biochemical sensors.

Achieving Weak Light Response with Plasmonic Nanogold-Decorated Organic Phototransistors

Weak light response of organic photodetectors has fascinating potentials in fields of modern science and technology. However, their photoresponsivity is hindered by poor photocarrier excitation and transport. Decorating active-layer surface with plasmonic nanometals is considered a viable strategy to address this issue. Here, we demonstrate a plasmonic nanogold decorated organic phototransistor achieving remarkable enhancement of photoresponsivity. Meanwhile, the photoresponsive range is broadened by 4 orders of magnitude. The proposed design is substantiated by a schematic energy level model combined with theoretical simulation analysis, enabling the development of the advanced optoelectronics.

Simple Unbiased Hot-Electron Polarization-Sensitive Near-Infrared Photodetector

Plasmonic nanostructures can generate energetic "hot" electrons from light in a broad band fashion depending on their shape, size, and arrangement. Such structures have a promising use in photodetectors, allowing high speed, broad band, and multicolor photodetection. Because they function without a band gap absorption, photon detection at any energy would be possible through engineering of the plasmonic nanostructure. Herein, a compact hot-electron-based photodetector that combines polarization sensitivity and circularly polarized light detection in the near-infrared region was fabricated using an indium tin oxide (ITO)-Au hybrid layer. Furthermore, the sensitivity of the device was significantly increased by adding a poled Azo molecular glass film in a capacitor configuration. The resulting device is capable of detecting light below the ITO band gap at ambient temperature without any bias voltage. This photodetector, which is amenable to large-area fabrication, can be integrated with other nanophotonic and nanoplasmonic structures for operation at telecom wavelengths.

Superior Plasmonic Photodetectors Based on Au@MoS2 Core-Shell Heterostructures

Integrating plasmonic materials into semiconductor media provides a promising approach for applications such as photosensing and solar energy conversion. The resulting structures introduce enhanced light-matter interactions, additional charge trap states, and efficient charge-transfer pathways for light-harvesting devices, especially when an intimate interface is built between the plasmonic nanostructure and semiconductor. Herein, we report the development of plasmonic photodetectors using Au@MoS₂ heterostructures-an Au nanoparticle core that is encapsulated by a CVD-grown multilayer MoS₂ shell, which perfectly realizes the intimate and direct interfacing of Au and MoS₂. We explored their favorable applications in different types of photosensing devices. The first involves the development of a large-area interdigitated field-effect phototransistor, which shows a photoresponsivity ∼10 times higher than that of planar MoS₂ transistors. The other type of device geometry is a Si-supported Au@MoS₂ heterojunction gateless photodiode. We demonstrated its superior photoresponse and recovery ability, with a photoresponsivity as high as 22.3 A/W, which is beyond the most distinguished values of previously reported similar gateless photodetectors. The improvement of photosensing performance can be a combined result of multiple factors, including enhanced light absorption, creation of more trap states, and, possibly, the formation of interfacial charge-transfer transition, benefiting from the intimate connection of Au and MoS₂.

Highly photoresponsive, ZnO nanorod-based photodetector for operation in the visible spectral range

While significant advances have been made for gold nanoparticle (AuNP)-coupled zinc oxide (ZnO) as visibly blind, ultraviolet photodetection devices, very few ZnO nanomaterial systems have been developed specifically for use in the visible wavelength regime. Further efforts to develop ZnO-based visible photodetectors (PDs) are still highly warranted in order to better understand the precise effect of AuNP load, operation wavelength, and beam position on the device output. In this study, we demonstrate significantly enhanced, photoresponse behaviors of AuNP-coupled ZnO nanorod (NR) network devices in the visible wavelength range with their photoresponse capacity comparable to, if not far exceeding, most commercial PDs as well as recently reported, visible, AuNP-coupled ZnO detectors. In addition, the nature and degree of the photoresponsivity enhancement are systematically elucidated by investigating their light-triggered electrical signals under varying incident wavelengths, AuNP amounts, and illumination positions. We discuss a possible photoconduction mechanism of our AuNP-coupled ZnO NR PDs and the origins of the high photoresponsivity. Specifically related to the AuNP amount-dependent photoresponse behaviors, the nanoparticle density yielding photoresponse maxima is explained as the interplay between localized surface plasmon resonance, plasmonic heating, and scattering in our photothermoelectric effect-driven device. We show that the AuNP-coupled ZnO NR PDs can be constructed via a straightforward method without the need for ultrahigh vacuum, sputtering procedures, or photo/electron-beam lithographic tools. Hence, the approach demonstrated in this study may serve as a convenient and viable means to advance the current state of ZnO-based PDs for operation in the visible spectral range with greatly increased photoresponsivity.

Monitoring interfacial lectin binding with nanomolar sensitivity using a plasmon field effect transistor

By immobilizing glycopolymers onto the surface of the recently developed plasmonic field effect transistor (FET), the recognition between lectins and surface-immobilized glycopolymers can be detected over a wide dynamic range (10^-10 to 10^-4 M) in an environment that resembles the glycocalyx. The binding to the sensor surface by various lectins was tested, and the selectivities and relative binding affinity trends observed in solution were maintained on the sensor surface, and the significantly higher avidities are attributed to cluster-glycoside effects that occur on the surface. The combination of polymer surface chemistry and optoelectronic output in this device architecture produces amongst the highest reported detection sensitivity for ConA. This work demonstrates the benefits that arise from combining emerging device architectures and soft-matter systems to create cutting edge nanotechnologies that lend themselves to fundamental biological studies and integration into point-of-use diagnostics and sensors.

Fundamental Limitations to Plasmonic Hot-Carrier Solar Cells

Detailed balance between photon-absorption and energy loss constrains the efficiency of conventional solar cells to the Shockley-Queisser limit. However, if solar illumination can be absorbed over a wide spectrum by plasmonic structures, and the generated hot-carriers can be collected before relaxation, the efficiency of solar cells may be greatly improved. In this work, we explore the opportunities and limitations for making plasmonic solar cells, here considering a design for hot-carrier solar cells in which a conventional semiconductor heterojunction is attached to a plasmonic medium such as arrays of gold nanoparticles. The underlying mechanisms and fundamental limitations of this cell are studied using a nonequilibrium Green's function method, and the numerical results indicate that this cell can significantly improve the absorption of solar radiation without reducing open-circuit voltage, as photons can be absorbed to produce mobile carriers in the semiconductor as long as they have energy larger than the Schottky barrier rather than above the bandgap. However, a significant fraction of the hot-carriers have energies below the Schottky barrier, which makes the cell suffer low internal quantum efficiency. Moreover, quantum efficiency is also limited by hot-carrier relaxation and metal-semiconductor coupling. The connection of these results to recent experiments is described, showing why plasmonic solar cells can have less than 1% efficiency.