1
|
Pramanik M, Bera A, Karmakar S, Sinha P, Singha A, Das K. High-Performance Broadband Self-Driven Photodetector Based on MoS 2/Cs 2CuBr 4 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38260-38268. [PMID: 39004815 DOI: 10.1021/acsami.4c06966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
Few-layer transition metal dichalcogenides and perovskites are both promising materials in high-performance optoelectronic devices. Here, we developed a self-driven photodetector by creating a heterojunction between few-layer MoS2 and lead-free perovskite Cs2CuBr4. The detector shows a unique property of very high sensitivity in a broad spectral range of 400 to 800 nm with response speed in a millisecond order. Current-voltage characteristics of the heterojunction device show rectifying behavior, in contrast to the ohmic behavior of the MoS2-based device. The rectifying behavior is attributed to the type II band alignment of the MoS2/Cs2CuBr4 heterojunction. The device shows a broadband (400 to 800 nm) photodetection with very high responsivity reaching up to 2.8 × 104 A/W and detectivity of 1.6 × 1011 Jones at a bias voltage of 3 V. The detector can also operate in self-bias mode with sufficient response. The photocurrent, photoresponsivity, detectivity, and external quantum efficiency of the device are found to be dependent on the illumination power density. The response time of the device is found to be ∼32 and ∼79 ms during the rise and fall of the photocurrent. The work proposes a MoS2/Cs2CuBr4 heterostructure to be a promising candidate for cost-effective, high-performance photodetector.
Collapse
Affiliation(s)
- Mousumi Pramanik
- Department of Physics, Jadavpur University, Kolkata 700032, India
| | - Anupam Bera
- Department of Physics, Jadavpur University, Kolkata 700032, India
| | - Sreya Karmakar
- Department of Basic Science and Humanities, Calcutta Institute of Engineering and Management, Kolkata 700040, India
| | - Pritam Sinha
- Department of Physics, Bose Institute, Kolkata 700009, India
| | - Achintya Singha
- Department of Physics, Bose Institute, Kolkata 700009, India
| | - Kaustuv Das
- Department of Physics, Jadavpur University, Kolkata 700032, India
| |
Collapse
|
2
|
Zhang L, Wang Y, Chu A, Zhang Z, Liu M, Shen X, Li B, Li X, Yi C, Song R, Liu Y, Zhuang X, Duan X. Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing. Nat Commun 2024; 15:5484. [PMID: 38942769 PMCID: PMC11213932 DOI: 10.1038/s41467-024-49364-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 06/03/2024] [Indexed: 06/30/2024] Open
Abstract
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.
Collapse
Affiliation(s)
- Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Anshi Chu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, P. R. China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Chen Yi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yingying Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiujuan Zhuang
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, Hunan, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China.
| |
Collapse
|
3
|
Li Z, Lin Y, Gu H, Zhang N, Wang B, Cai H, Liao J, Yu D, Chen Y, Fang G, Liang C, Yang S, Xing G. Large-n quasi-phase-pure two-dimensional halide perovskite: A toolbox from materials to devices. Sci Bull (Beijing) 2024; 69:382-418. [PMID: 38105163 DOI: 10.1016/j.scib.2023.12.014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 11/14/2023] [Accepted: 11/24/2023] [Indexed: 12/19/2023]
Abstract
Despite their excellent environmental stability, low defect density, and high carrier mobility, large-n quasi-two-dimensional halide perovskites (quasi-2DHPs) feature a limited application scope because of the formation of self-assembled multiple quantum wells (QWs) due to the similar thermal stabilities of large-n phases. However, large-n quasi-phase-pure 2DHPs (quasi-PP-2DHPs) can solve this problem perfectly. This review discusses the structures, formation mechanisms, and photoelectronic and physical properties of quasi-PP-2DHPs, summarises the corresponding single crystals, thin films, and heterojunction preparation methods, and presents the related advances. Moreover, we focus on applications of large-n quasi-PP-2DHPs in solar cells, photodetectors, lasers, light-emitting diodes, and field-effect transistors, discuss the challenges and prospects of these emerging photoelectronic materials, and review the potential technological developments in this area.
Collapse
Affiliation(s)
- Zijia Li
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuexin Lin
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Gu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Nan Zhang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bin Wang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hairui Cai
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinfeng Liao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Dejian Yu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China
| | - Yiwang Chen
- National Engineering Research Center for Carbohydrate Synthesis, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang 330022, China
| | - Guojia Fang
- Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chao Liang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Shengchun Yang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macao 999078, China.
| |
Collapse
|
4
|
Xu H, Sun F, Guo W, Han S, Liu Y, Fan Q, Tang L, Liu W, Luo J, Sun Z. Building Block-Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate-Tunable Memory Behavior. Angew Chem Int Ed Engl 2023; 62:e202309416. [PMID: 37733923 DOI: 10.1002/anie.202309416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Revised: 09/20/2023] [Accepted: 09/21/2023] [Indexed: 09/23/2023]
Abstract
Ferroelectric photovoltaics driven by spontaneous polarization (Ps ) holds a promise for creating the next-generation optoelectronics, spintronics and non-volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe Ps fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA)2 (MA)n-1 Pbn Br3n+1 (n=1-5; HA=hexylamine and MA=methylamine). It is intriguing that their Curie temperatures are greatly enhanced by reducing the thickness of inorganic frameworks from MAPbBr3 (n=∞, Tc =239 K) to n=2 (Tc =310 K, ΔT=71 K). Especially, on account of the coupling of room-temperature ferroelectricity (Ps ≈1.5 μC/cm2 ) and photoconductivity, n=3 crystal wafer was integrated as channel field effect transistor that shows excellent a large short-circuit photocurrent ≈19.74 μA/cm2 . Such giant photocurrents can be modulated through manipulating gate voltage in a wide range (±60 V), exhibiting gate-tunable memory behaviors of three current states ("-1/0/1" states). We believe that this work sheds light on further exploration of ferroelectric materials toward new non-volatile memory devices.
Collapse
Affiliation(s)
- Haojie Xu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fapeng Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wuqian Guo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Qingshun Fan
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Liwei Tang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wei Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| |
Collapse
|
5
|
Qiu L, Si G, Bao X, Liu J, Guan M, Wu Y, Qi X, Xing G, Dai Z, Bao Q, Li G. Interfacial engineering of halide perovskites and two-dimensional materials. Chem Soc Rev 2023; 52:212-247. [PMID: 36468561 DOI: 10.1039/d2cs00218c] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
Abstract
Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.
Collapse
Affiliation(s)
- Lei Qiu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Guangyuan Si
- Melbourne Center for Nanofabrication, Victorian Node of the Australian National Fabrication Facility, 151 Wellington Road, Clayton, Victoria 3168, Australia
| | - Xiaozhi Bao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Jun Liu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Mengyu Guan
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Yiwen Wu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan 411105, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Zhigao Dai
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Shenzhen Institute, China University of Geosciences, Shenzhen 518057, China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, China.,Nanjing kLight Laser Technology Co. Ltd., Nanjing, Jiangsu 210032, China.
| | - Guogang Li
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Zhejiang Institute, China University of Geosciences, Hangzhou 311305, China
| |
Collapse
|
6
|
Kim B, Kim M, Kim H, Jeong S, Yang J, Jeong MS. Improved Stability of MAPbI 3 Perovskite Solar Cells Using Two-Dimensional Transition-Metal Dichalcogenide Interlayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35726-35733. [PMID: 35904868 DOI: 10.1021/acsami.2c08680] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Perovskite solar cells (PSCs) have been receiving considerable attention as next-generation solar cells. However, their short lifetime is a major obstacle to their commercialization. In addition to the properties of the materials used in PSCs, their interfaces play an important role in device stability by maintaining their initial design. In this study, we developed a transition-metal dichalcogenide (TMD) as a stable and efficient interlayer. MoS2 and WSe2 were applied to both the hole and electron transport sides of the PSCs with general FTO/TiO2/MAPbI3/Spiro-OMeTAD/Au structures, respectively. Owing to efficient charge transfer by TMD interlayers, our PSCs achieved a 19.24% efficiency, which is higher than the efficiency of the control devices (18.22%). Furthermore, the device stability was markedly improved by the passivation and strain-release effects of the TMD interlayers. Thus, the PSCs with TMD interlayers demonstrated a stable performance over 1000 h under damp heat (85 °C and 85% relative humidity) conditions.
Collapse
Affiliation(s)
- Bora Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Moonhoe Kim
- Department of Physics, Kunsan National University, Gunsan54150, Republic of Korea
| | - Hyojung Kim
- Center for Composite Materials and Concurrent Design, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sohee Jeong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Artificial Atom and Quantum Materials Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - JungYup Yang
- Department of Physics, Kunsan National University, Gunsan54150, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
- Department of Energy Engineering, Hanyang University, Seoul 04763, Republic of Korea
| |
Collapse
|
7
|
Yuan B, Hua Z, Jia S, Lu Y, Shi E, Yu Y. Graphene protection improves the stability of two-dimensional halide perovskites under the electron irradiation. Microsc Res Tech 2022; 85:3582-3588. [PMID: 35880591 DOI: 10.1002/jemt.24209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 07/09/2022] [Accepted: 07/09/2022] [Indexed: 11/10/2022]
Abstract
The crystal structure of two-dimensional (2D) organic-inorganic halide perovskites undergoes fast structural collapse under the electron beam irradiation, hindering high-resolution transmission electron microscopy imaging. Graphene protection is an effective solution to mitigate the damage of electron-beam irradiation and has been applied in 2D materials such as MoS2 . However, the effectivity of graphene protection has not been demonstrated in 2D halide perovskites yet, as traditional wet-transfer of graphene with aqueous solution would cause serious degradation for moisture-sensitive halide perovskites. Here, we verified that graphene protection plays a protection role and developed a method using nonpolar solvent to transfer the graphene layer atop the perovskite nanosheets. With this method, the perovskite nanosheets might be well protected by graphene encapsulation. HIGHLIGHTS: Transfer method of graphene on moisture-sensitive 2D halide perovskites using nonpolar solvents was developed. Graphene substrate is proven to be able to mitigate electron-beam damage to 2D halide perovskites. Encapsulation structure of graphene/halide perovskite/graphene was demonstrated.
Collapse
Affiliation(s)
- Biao Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, China
| | - Ziyi Hua
- School of Engineering, Westlake University, Hangzhou, China
| | - Shunhan Jia
- School of Engineering, Westlake University, Hangzhou, China.,CAS Key Laboratory of Colloid and Interface and Thermodynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China
| | - Yuan Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, China
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, China
| | - Yi Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, China
| |
Collapse
|
8
|
Zhang C, Lu G, Zhang Y, Fang Z, He H, Zhu H. Long-range transport and ultrafast interfacial charge transfer in perovskite/monolayer semiconductor heterostructure for enhanced light absorption and photocarrier lifetime. J Chem Phys 2022; 156:244701. [DOI: 10.1063/5.0097617] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.
Collapse
Affiliation(s)
- Chi Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
| | - Yao Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Zhishan Fang
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
| |
Collapse
|
9
|
Lin CH, Hu L, Guan X, Kim J, Huang CY, Huang JK, Singh S, Wu T. Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108616. [PMID: 34995372 DOI: 10.1002/adma.202108616] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
Collapse
Affiliation(s)
- Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| |
Collapse
|
10
|
Peng B, Zhou H, Liu Z, Li Y, Shang Q, Xie J, Deng L, Zhang Q, Liang D. Pattern-Selective Molecular Epitaxial Growth of Single-Crystalline Perovskite Arrays toward Ultrasensitive and Ultrafast Photodetector. NANO LETTERS 2022; 22:2948-2955. [PMID: 35289627 DOI: 10.1021/acs.nanolett.2c00074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The emergence of organic-inorganic perovskite has provided great flexibility for creating optoelectronic devices with unprecedented performance or unique functionality. However, the perovskite films explored so far have been difficult to be patterned to arrays owing to their poor solvent and moisture stability, which usually lead to serious structural damage of perovskites. The successful preparation of perovskite microarrays with uniform shape and size is more challenging. Here we report a straightforward approach to realize single-crystalline perovskite arrays through a relatively simple pattern-selective molecular epitaxial growth. This approach is applied to create diverse shaped perovskite arrays, such as hexagon, triangle, circle, square, and rectangle. A vertically aligned perovskite photodetector displays both an ultrasensitive and ultrafast photoresponse arising from the reduction in carrier diffusion paths and the high optical absorption. This work demonstrates a general approach to creating perovskite arrays with uniform shape, size, and morphology and provides a rich platform for producing high-performance photodetectors and photovoltage devices.
Collapse
Affiliation(s)
- Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hongmei Zhou
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhen Liu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yue Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jianliang Xie
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Difei Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| |
Collapse
|
11
|
Vikraman D, Liu H, Hussain S, Jaffery SHA, Karuppasamy K, Jo EB, Abbas Z, Jung J, Kang J, Kim HS. Impact of Molybdenum Dichalcogenides on the Active and Hole-Transport Layers for Perovskite Solar Cells, X-Ray Detectors, and Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104216. [PMID: 35146911 DOI: 10.1002/smll.202104216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
The interface architectures of inorganic-organic halide perovskite-based devices play key roles in achieving high performances with these devices. Indeed, the perovskite layer is essential for synergistic interactions with the other practical modules of these devices, such as the hole-/electron-transfer layers. In this work, a heterostructure geometry comprising transition-metal dichalcogenides (TMDs) of molybdenum dichalcogenides (MoX2 = MoS2 , MoSe2 , and MoTe2 ) and perovskite- or hole-transfer layers is prepared to achieve improved device characteristics of perovskite solar cells (PSCs), X-ray detectors, and photodetectors. A superior efficiency of 11.36% is realized for the active layer with MoTe2 in the PSC device. Moreover, X-ray detectors using modulated MoTe2 nanostructures in the active layers achieve 296 nA cm-2 , 3.12 mA (Gy cm2 )-1 and 3.32 × 10-4 cm2 V-1 s-1 of collected current density, sensitivity, and mobility, respectively. The fabricated photodetector produces a high photoresponsivity of 956 mA W-1 for a visible light source, with an excellent external quantum efficiency of 160% for the perovskite layer containing MoSe2 nanostructures. Density functional theory calculations are made for pure and MoX2 doped perovskites' geometrical, density of states and optical properties variations evidently. Thus, the present study paves the way for using perovskite-based devices modified by TMDs to develop highly efficient semiconductor devices.
Collapse
Affiliation(s)
- Dhanasekaran Vikraman
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul, 04620, Republic of Korea
| | - Hailiang Liu
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, 16890, Republic of Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul, 05006, Republic of Korea
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul, 05006, Republic of Korea
| | - K Karuppasamy
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul, 04620, Republic of Korea
| | - Eun-Bee Jo
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul, 04620, Republic of Korea
| | - Zeesham Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul, 05006, Republic of Korea
| | - Jungwon Kang
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, 16890, Republic of Korea
| | - Hyun-Seok Kim
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul, 04620, Republic of Korea
| |
Collapse
|
12
|
Cheng X, Han Y, Cui B. Fabrication Strategies and Optoelectronic Applications of Perovskite Heterostructures. ADVANCED OPTICAL MATERIALS 2022; 10. [DOI: 10.1002/adom.202102224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2021] [Indexed: 09/01/2023]
Abstract
AbstractMetal halide perovskites (MHPs) are emerging low‐cost and multifunctional semiconductor materials. They have been widely used in optoelectronic devices such as perovskite solar cells, light‐emitting diodes, photodetectors, memristors, and lasers. Developing new MHPs, defects passivation, optimizing device structures, and packaging techniques are all effective methods to improve photoelectric performance and stability of perovskite devices. Particularly, the fabrication of perovskite/perovskite heterostructures (PPHSs) is a novel and arresting method to obtain stable and high‐performing optoelectronic perovskite devices since it can passivate defects, regulate energy gaps, and provide new carrier transmission modes of MHPs for multiple semiconductor applications. In this paper, representative fabrication strategies of PPHSs including films and single‐crystal heterostructures are reviewed, and their applications in optoelectronic devices are summarized. Furthermore, the challenges and prospects of PPHSs are discussed based on the current status.
Collapse
Affiliation(s)
- Xiaohua Cheng
- Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 P. R. China
- School of Chemistry and Chemical Engineering Beijing Institute of Technology Beijing 100081 P. R. China
| | - Ying Han
- Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 P. R. China
- School of Chemistry and Chemical Engineering Beijing Institute of Technology Beijing 100081 P. R. China
| | - Bin‐Bin Cui
- Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 P. R. China
- School of Chemistry and Chemical Engineering Beijing Institute of Technology Beijing 100081 P. R. China
- School of Materials Science & Engineering Beijing Institute of Technology Beijing 100081 P. R. China
| |
Collapse
|
13
|
Li Z, Hong E, Zhang X, Deng M, Fang X. Perovskite-Type 2D Materials for High-Performance Photodetectors. J Phys Chem Lett 2022; 13:1215-1225. [PMID: 35089041 DOI: 10.1021/acs.jpclett.1c04225] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Photodetectors are light sensors in widespread use in image sensing, optical communication, and consumer electronics. In current smart optoelectronic technology, conventional semiconductors have encountered a bottleneck caused by inflexibility and opacity. With the ever-increasing demands for versatile optoelectronic applications, perovskite-type 2D materials demonstrate great potential for advanced photodetectors inspired by molecularly thin 2D materials. Through the reduction of thickness to thin or molecularly thin levels, single-crystalline 2D perovskites can exhibit superior optoelectronic performance characteristics, such as tunable absorption property by chemical design, enhanced carrier separation by remarkable photosensing capability, and improved carrier extraction by versatile band engineering. More importantly, perovskite-type 2D materials exhibit great potential for large-scale monolithic integration to achieve all-in-one sensing-memory-computing optoelectronic devices. In this Perspective, recent progress in 2D perovskite-based photodetectors is presented in detail. The focus is on growth strategies for reducing thickness, thickness-dependent optical and electrical properties, device engineering, heterojunction fabrication, and device performance. Finally, the current challenges and future prospects in this field are presented.
Collapse
Affiliation(s)
- Ziqing Li
- Institute of Optoelectronics, Fudan University, Shanghai 200433, P.R. China
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Enliu Hong
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Xinyu Zhang
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Ming Deng
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Xiaosheng Fang
- Institute of Optoelectronics, Fudan University, Shanghai 200433, P.R. China
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| |
Collapse
|
14
|
Dey A, Ye J, De A, Debroye E, Ha SK, Bladt E, Kshirsagar AS, Wang Z, Yin J, Wang Y, Quan LN, Yan F, Gao M, Li X, Shamsi J, Debnath T, Cao M, Scheel MA, Kumar S, Steele JA, Gerhard M, Chouhan L, Xu K, Wu XG, Li Y, Zhang Y, Dutta A, Han C, Vincon I, Rogach AL, Nag A, Samanta A, Korgel BA, Shih CJ, Gamelin DR, Son DH, Zeng H, Zhong H, Sun H, Demir HV, Scheblykin IG, Mora-Seró I, Stolarczyk JK, Zhang JZ, Feldmann J, Hofkens J, Luther JM, Pérez-Prieto J, Li L, Manna L, Bodnarchuk MI, Kovalenko MV, Roeffaers MBJ, Pradhan N, Mohammed OF, Bakr OM, Yang P, Müller-Buschbaum P, Kamat PV, Bao Q, Zhang Q, Krahne R, Galian RE, Stranks SD, Bals S, Biju V, Tisdale WA, Yan Y, Hoye RLZ, Polavarapu L. State of the Art and Prospects for Halide Perovskite Nanocrystals. ACS NANO 2021; 15:10775-10981. [PMID: 34137264 PMCID: PMC8482768 DOI: 10.1021/acsnano.0c08903] [Citation(s) in RCA: 363] [Impact Index Per Article: 121.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2020] [Accepted: 05/04/2021] [Indexed: 05/10/2023]
Abstract
Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.
Collapse
Grants
- from U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division
- Ministry of Education, Culture, Sports, Science and Technology
- European Research Council under the European Unionâ??s Horizon 2020 research and innovation programme (HYPERION)
- Ministry of Education - Singapore
- FLAG-ERA JTC2019 project PeroGas.
- Deutsche Forschungsgemeinschaft
- Division of Chemical Sciences, Geosciences, and Biosciences, Office of Basic Energy Sciences of the U.S. Department of Energy
- EPSRC
- iBOF funding
- Agencia Estatal de Investigaci�ón, Ministerio de Ciencia, Innovaci�ón y Universidades
- National Research Foundation Singapore
- National Natural Science Foundation of China
- Croucher Foundation
- US NSF
- Fonds Wetenschappelijk Onderzoek
- National Science Foundation
- Royal Society and Tata Group
- Department of Science and Technology, Ministry of Science and Technology
- Swiss National Science Foundation
- Natural Science Foundation of Shandong Province, China
- Research 12210 Foundation?Flanders
- Japan International Cooperation Agency
- Ministry of Science and Innovation of Spain under Project STABLE
- Generalitat Valenciana via Prometeo Grant Q-Devices
- VetenskapsrÃÂ¥det
- Natural Science Foundation of Jiangsu Province
- KU Leuven
- Knut och Alice Wallenbergs Stiftelse
- Generalitat Valenciana
- Agency for Science, Technology and Research
- Ministerio de EconomÃÂa y Competitividad
- Royal Academy of Engineering
- Hercules Foundation
- China Association for Science and Technology
- U.S. Department of Energy
- Alexander von Humboldt-Stiftung
- Wenner-Gren Foundation
- Welch Foundation
- Vlaamse regering
- European Commission
- Bayerisches Staatsministerium für Wissenschaft, Forschung und Kunst
Collapse
Affiliation(s)
- Amrita Dey
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
| | - Junzhi Ye
- Cavendish
Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Apurba De
- School of
Chemistry, University of Hyderabad, Hyderabad 500 046, India
| | - Elke Debroye
- Department
of Chemistry, KU Leuven, 3001 Leuven, Belgium
| | - Seung Kyun Ha
- Department
of Chemical Engineering, Massachusetts Institute
of Technology, Cambridge, Massachusetts 02139, United States
| | - Eva Bladt
- EMAT, University
of Antwerp, Groenenborgerlaan
171, 2020 Antwerp, Belgium
- NANOlab Center
of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Anuraj S. Kshirsagar
- Department
of Chemistry, Indian Institute of Science
Education and Research (IISER), Pune 411008, India
| | - Ziyu Wang
- School
of
Science and Technology for Optoelectronic Information ,Yantai University, Yantai, Shandong Province 264005, China
| | - Jun Yin
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- CINBIO,
Universidade de Vigo, Materials Chemistry
and Physics group, Departamento de Química Física, Campus Universitario As Lagoas,
Marcosende, 36310 Vigo, Spain
- Advanced
Membranes and Porous Materials Center, King
Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Yue Wang
- MIIT Key
Laboratory of Advanced Display Materials and Devices, Institute of
Optoelectronics & Nanomaterials, College of Materials Science
and Engineering, Nanjing University of Science
and Technology, Nanjing 210094, China
| | - Li Na Quan
- Department
of Chemistry, University of California,
Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Fei Yan
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, TPI-The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
| | - Mengyu Gao
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Department
of Materials Science and Engineering, University
of California, Berkeley, California 94720, United States
| | - Xiaoming Li
- MIIT Key
Laboratory of Advanced Display Materials and Devices, Institute of
Optoelectronics & Nanomaterials, College of Materials Science
and Engineering, Nanjing University of Science
and Technology, Nanjing 210094, China
| | - Javad Shamsi
- Cavendish
Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Tushar Debnath
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
| | - Muhan Cao
- Institute
of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory
for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Manuel A. Scheel
- Lehrstuhl
für Funktionelle Materialien, Physik Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching, Germany
| | - Sudhir Kumar
- Institute
for Chemical and Bioengineering, Department of Chemistry and Applied
Biosciences, ETH-Zurich, CH-8093 Zürich, Switzerland
| | - Julian A. Steele
- MACS Department
of Microbial and Molecular Systems, KU Leuven, 3001 Leuven, Belgium
| | - Marina Gerhard
- Chemical
Physics and NanoLund Lund University, PO Box 124, 22100 Lund, Sweden
| | - Lata Chouhan
- Graduate
School of Environmental Science and Research Institute for Electronic
Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
| | - Ke Xu
- Department
of Chemistry and Biochemistry, University
of California, Santa Cruz, California 95064, United States
- Multiscale
Crystal Materials Research Center, Shenzhen Institute of Advanced
Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Xian-gang Wu
- Beijing
Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems,
School of Materials Science & Engineering, Beijing Institute of Technology, 5 Zhongguancun South Street, Haidian
District, Beijing 100081, China
| | - Yanxiu Li
- Department
of Materials Science and Engineering, and Centre for Functional Photonics
(CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R.
| | - Yangning Zhang
- McKetta
Department of Chemical Engineering and Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712-1062, United States
| | - Anirban Dutta
- School
of Materials Sciences, Indian Association
for the Cultivation of Science, Kolkata 700032, India
| | - Chuang Han
- Department
of Chemistry and Biochemistry, San Diego
State University, San Diego, California 92182, United States
| | - Ilka Vincon
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
| | - Andrey L. Rogach
- Department
of Materials Science and Engineering, and Centre for Functional Photonics
(CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R.
| | - Angshuman Nag
- Department
of Chemistry, Indian Institute of Science
Education and Research (IISER), Pune 411008, India
| | - Anunay Samanta
- School of
Chemistry, University of Hyderabad, Hyderabad 500 046, India
| | - Brian A. Korgel
- McKetta
Department of Chemical Engineering and Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712-1062, United States
| | - Chih-Jen Shih
- Institute
for Chemical and Bioengineering, Department of Chemistry and Applied
Biosciences, ETH-Zurich, CH-8093 Zürich, Switzerland
| | - Daniel R. Gamelin
- Department
of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Dong Hee Son
- Department
of Chemistry, Texas A&M University, College Station, Texas 77843, United States
| | - Haibo Zeng
- MIIT Key
Laboratory of Advanced Display Materials and Devices, Institute of
Optoelectronics & Nanomaterials, College of Materials Science
and Engineering, Nanjing University of Science
and Technology, Nanjing 210094, China
| | - Haizheng Zhong
- Beijing
Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems,
School of Materials Science & Engineering, Beijing Institute of Technology, 5 Zhongguancun South Street, Haidian
District, Beijing 100081, China
| | - Handong Sun
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore 637371
- Centre
for Disruptive Photonic Technologies (CDPT), Nanyang Technological University, Singapore 637371
| | - Hilmi Volkan Demir
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, TPI-The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore 639798
- Department
of Electrical and Electronics Engineering, Department of Physics,
UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Ivan G. Scheblykin
- Chemical
Physics and NanoLund Lund University, PO Box 124, 22100 Lund, Sweden
| | - Iván Mora-Seró
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12071 Castelló, Spain
| | - Jacek K. Stolarczyk
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
| | - Jin Z. Zhang
- Department
of Chemistry and Biochemistry, University
of California, Santa Cruz, California 95064, United States
| | - Jochen Feldmann
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
| | - Johan Hofkens
- Department
of Chemistry, KU Leuven, 3001 Leuven, Belgium
- Max Planck
Institute for Polymer Research, Mainz 55128, Germany
| | - Joseph M. Luther
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Julia Pérez-Prieto
- Institute
of Molecular Science, University of Valencia, c/Catedrático José
Beltrán 2, Paterna, Valencia 46980, Spain
| | - Liang Li
- School
of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Liberato Manna
- Nanochemistry
Department, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Maryna I. Bodnarchuk
- Institute
of Inorganic Chemistry and § Institute of Chemical and Bioengineering,
Department of Chemistry and Applied Bioscience, ETH Zurich, Vladimir
Prelog Weg 1, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Maksym V. Kovalenko
- Institute
of Inorganic Chemistry and § Institute of Chemical and Bioengineering,
Department of Chemistry and Applied Bioscience, ETH Zurich, Vladimir
Prelog Weg 1, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | | | - Narayan Pradhan
- School
of Materials Sciences, Indian Association
for the Cultivation of Science, Kolkata 700032, India
| | - Omar F. Mohammed
- Advanced
Membranes and Porous Materials Center, King
Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- KAUST Catalysis
Center, King Abdullah University of Science
and Technology, Thuwal 23955-6900, Kingdom of Saudi
Arabia
| | - Osman M. Bakr
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Advanced
Membranes and Porous Materials Center, King
Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Peidong Yang
- Department
of Chemistry, University of California,
Berkeley, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Department
of Materials Science and Engineering, University
of California, Berkeley, California 94720, United States
- Kavli
Energy NanoScience Institute, Berkeley, California 94720, United States
| | - Peter Müller-Buschbaum
- Lehrstuhl
für Funktionelle Materialien, Physik Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching, Germany
- Heinz Maier-Leibnitz
Zentrum (MLZ), Technische Universität
München, Lichtenbergstr. 1, D-85748 Garching, Germany
| | - Prashant V. Kamat
- Notre Dame
Radiation Laboratory, Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Qiaoliang Bao
- Department
of Materials Science and Engineering and ARC Centre of Excellence
in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Qiao Zhang
- Institute
of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory
for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Roman Krahne
- Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Raquel E. Galian
- School
of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Samuel D. Stranks
- Cavendish
Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, United Kingdom
| | - Sara Bals
- EMAT, University
of Antwerp, Groenenborgerlaan
171, 2020 Antwerp, Belgium
- NANOlab Center
of Excellence, University of Antwerp, 2020 Antwerp, Belgium
| | - Vasudevanpillai Biju
- Graduate
School of Environmental Science and Research Institute for Electronic
Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan
| | - William A. Tisdale
- Department
of Chemical Engineering, Massachusetts Institute
of Technology, Cambridge, Massachusetts 02139, United States
| | - Yong Yan
- Department
of Chemistry and Biochemistry, San Diego
State University, San Diego, California 92182, United States
| | - Robert L. Z. Hoye
- Department
of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
| | - Lakshminarayana Polavarapu
- Chair for
Photonics and Optoelectronics, Nano-Institute Munich, Department of
Physics, Ludwig-Maximilians-Universität
(LMU), Königinstrasse 10, 80539 Munich, Germany
- CINBIO,
Universidade de Vigo, Materials Chemistry
and Physics group, Departamento de Química Física, Campus Universitario As Lagoas,
Marcosende, 36310 Vigo, Spain
| |
Collapse
|
15
|
Wang X, Wang B, Wu Y, Wang E, Luo H, Sun Y, Fu D, Sun Y, Liu K. Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS 2 Matrix. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26143-26151. [PMID: 34043911 DOI: 10.1021/acsami.1c00725] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterostructures have attracted widespread attention for their promising prospects in the fields of electronics and optoelectronics. However, in order to truly realize 2D-material-based integrated circuits, precisely controllable fabrication of 2D heterostructures is crucial and urgently needed. Here, we demonstrate an ex situ growth method of MoSe2/MoS2 lateral heterostructures by selective selenization of a laser-scanned, ultrathin oxidized region (MoOx) on a monolayer MoS2 matrix. In our method, monolayer MoS2 is scanned by a laser with a pre-designed pattern, where the laser-scanned MoS2 is totally oxidized into MoOx. The oxidized region is then selenized in a furnace, while the unoxidized MoS2 region remains unchanged, delivering a MoSe2/MoS2 heterostructure. Unlike in situ laser direct growth methods, our method separates the laser-scanned process from the selenization process, which avoids the long time of point-by-point selenization of MoS2 by laser, making the efficiency of the synthesis greatly improved. The formation process of the heterostructure is studied by Raman spectroscopy and Auger electron spectroscopy. This simple and controllable approach to lateral heterostructures with desired patterns paves the way for fast and mass integration of devices based on 2D heterostructures.
Collapse
Affiliation(s)
- Xuewen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Hao Luo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Deyi Fu
- College of Physical Science and Technology, Xiamen University, Xiamen, Fujian 361005, China
| | - Yinghui Sun
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| |
Collapse
|
16
|
Xiao M, Liu J, Liu C, Han G, Shi Y, Li C, Zhang X, Hu Y, Liu Z, Gao X, Cai Z, Liu J, Yi Y, Wang S, Wang D, Hu W, Liu Y, Sirringhaus H, Jiang L. Sub-5 nm single crystalline organic p-n heterojunctions. Nat Commun 2021; 12:2774. [PMID: 33986296 PMCID: PMC8119440 DOI: 10.1038/s41467-021-23066-3] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2020] [Accepted: 04/08/2021] [Indexed: 12/16/2022] Open
Abstract
The cornerstones of emerging high-performance organic photovoltaic devices are bulk heterojunctions, which usually contain both structure disorders and bicontinuous interpenetrating grain boundaries with interfacial defects. This feature complicates fundamental understanding of their working mechanism. Highly-ordered crystalline organic p–n heterojunctions with well-defined interface and tailored layer thickness, are highly desirable to understand the nature of organic heterojunctions. However, direct growth of such a crystalline organic p–n heterojunction remains a huge challenge. In this work, we report a design rationale to fabricate monolayer molecular crystals based p–n heterojunctions. In an organic field-effect transistor configuration, we achieved a well-balanced ambipolar charge transport, comparable to single component monolayer molecular crystals devices, demonstrating the high-quality interface in the heterojunctions. In an organic solar cell device based on the p–n junction, we show the device exhibits gate-tunable open-circuit voltage up to 1.04 V, a record-high value in organic single crystalline photovoltaics. Realizing organic p–n junctions based on ordered crystalline materials with dimensions comparable to the exciton diffusion length of most organic semiconductors remains a challenge. Here, the authors report a strategy to form molecular monolayer crystal-based p–n junctions with thickness below 5 nm.
Collapse
Affiliation(s)
- Mingchao Xiao
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China.,Key laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China
| | - Guangchao Han
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Yanjun Shi
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Xi Zhang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Yuanyuan Hu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zitong Liu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Xike Gao
- Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai, China
| | - Zhengxu Cai
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, China
| | - Ji Liu
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Yuanping Yi
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China.
| | - Shuai Wang
- Key laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, China.
| | - Dong Wang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | - Wenping Hu
- College of Science, Tianjin University, Tianjin, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China
| | | | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, China. .,University of the Chinese Academy of Sciences, Beijing, China.
| |
Collapse
|
17
|
Zhang Z, Wang S, Liu X, Chen Y, Su C, Tang Z, Li Y, Xing G. Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications. SMALL METHODS 2021; 5:e2000937. [PMID: 34927847 DOI: 10.1002/smtd.202000937] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Revised: 11/20/2020] [Indexed: 05/24/2023]
Abstract
The past decade has witnessed the great success achieved by metal halide perovskites (MHPs) in photovoltaic and related fields. However, challenges still remain in further improving their performance, as well as, settling the stability issue for future commercialization. Recently, MHP/2D material heterostructures that combining MHPs with the low-cost and solution-processable 2D materials have demonstrated unprecedented improvement in both performance and stability due to the distinctive features at hetero-interface. The diverse fabrication techniques of MHPs and 2D materials allow them to be assembled as heterostructures with different configurations in a variety of ways. Moreover, the large families of MHPs and 2D materials provide the opportunity for the rational design and modification on compositions and functionalities of MHP/2D materials heterostructures. Herein, a comprehensive review of MHP/2D material heterostructures from syntheses to applications is presented. First, various fabrication techniques for MHP/2D material heterostructures are introduced by classifying them into solid-state methods and solution-processed methods. Then the applications of MHP/2D heterostructures in various fields including photodetectors, solar cells, and photocatalysis are summarized in detail. Finally, current challenges for the development of MHP/2D material heterostructures are highlighted, and future opportunities for the advancements in this research field are also provided.
Collapse
Affiliation(s)
- Zhipeng Zhang
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Sisi Wang
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Chenliang Su
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
| | - Zikang Tang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Ying Li
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| |
Collapse
|
18
|
Wang HP, Li S, Liu X, Shi Z, Fang X, He JH. Low-Dimensional Metal Halide Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003309. [PMID: 33346383 DOI: 10.1002/adma.202003309] [Citation(s) in RCA: 149] [Impact Index Per Article: 49.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 07/21/2020] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.
Collapse
Affiliation(s)
- Hsin-Ping Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xinya Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| |
Collapse
|
19
|
Qiu X, Liu Y, Li W, Hu Y. Traps in metal halide perovskites: characterization and passivation. NANOSCALE 2020; 12:22425-22451. [PMID: 33151219 DOI: 10.1039/d0nr05739h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal halide perovskites (MHPs) have become a research focus in the field of optoelectronics due to their excellent optoelectronic properties and simple and cost-effective thin film manufacturing processes. In particular, the power conversion efficiency (PCE) of solar cells (SCs) and external quantum efficiency (EQE) of light-emitting diodes (LEDs) based on perovskite materials have reached 25.2% and 21.6%, respectively, in a short period, making perovskites especially promising for fabricating next-generation optoelectronic devices. Despite these inspiring results, obtaining high-performance, high-stability MHP-based devices still faces many challenges, among which the defects and the consequent traps in MHPs are key factors. Defect-induced traps can trap charge carriers or even act as non-radiative recombination centers, seriously degrading the device performance, causing hysteresis and deteriorating the stability of MHP-based devices. Thus, understanding the chemical/physical nature of traps and adopting appropriate strategies to passivate traps are important to enhance the device performance and stability. Herein we present a review in which the knowledge and understanding of traps in MHPs are considered and discussed. Moreover, the latest efforts on passivating traps in MHPs for improving device performance are summarized, with the hope of providing guidance to future development of high-performance and high-stability MHP-based devices.
Collapse
Affiliation(s)
- Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | | | | | | |
Collapse
|
20
|
Zeng M, Kuang W, Khan I, Huang D, Du Y, Saeidi-Javash M, Zhang L, Cheng Z, Hoffman AJ, Zhang Y. Colloidal Nanosurfactants for 3D Conformal Printing of 2D van der Waals Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003081. [PMID: 32851710 DOI: 10.1002/adma.202003081] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 07/20/2020] [Indexed: 05/26/2023]
Abstract
Printing techniques using nanomaterials have emerged as a versatile tool for fast prototyping and potentially large-scale manufacturing of functional devices. Surfactants play a significant role in many printing processes due to their ability to reduce interfacial tension between ink solvents and nanoparticles and thus improve ink colloidal stability. Here, a colloidal graphene quantum dot (GQD)-based nanosurfactant is reported to stabilize various types of 2D materials in aqueous inks. In particular, a graphene ink with superior colloidal stability is demonstrated by GQD nanosurfactants via the π-π stacking interaction, leading to the printing of multiple high-resolution patterns on various substrates using a single printing pass. It is found that nanosurfactants can significantly improve the mechanical stability of the printed graphene films compared with those of conventional molecular surfactant, as evidenced by 100 taping, 100 scratching, and 1000 bending cycles. Additionally, the printed composite film exhibits improved photoconductance using UV light with 400 nm wavelength, arising from excitation across the nanosurfactant bandgap. Taking advantage of the 3D conformal aerosol jet printing technique, a series of UV sensors of heterogeneous structures are directly printed on 2D flat and 3D spherical substrates, demonstrating the potential of manufacturing geometrically versatile devices based on nanosurfactant inks.
Collapse
Affiliation(s)
- Minxiang Zeng
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Wenzheng Kuang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Irfan Khan
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Dali Huang
- Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Yipu Du
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Mortaza Saeidi-Javash
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Lecheng Zhang
- Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Zhengdong Cheng
- Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX, 77843, USA
- Chemical Engineering Department, Texas A&M University at Qatar, P.O. Box 23874, Doha, Qatar
| | - Anthony J Hoffman
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Yanliang Zhang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| |
Collapse
|
21
|
Chen Y, Liu Z, Li J, Cheng X, Ma J, Wang H, Li D. Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures. ACS NANO 2020; 14:10258-10264. [PMID: 32806069 DOI: 10.1021/acsnano.0c03624] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Interlayer excitons have been extensively studied in monolayer transition metal dichalcogenide (TMD) heterobilayers mainly due to the long lifetime, which is beneficial for a wide range of optoelectronic applications. To date, the majority of investigations of interlayer excitons in TMD heterobilayers have been focusing on the geometric arrangement of structures, spin-valley lifetime, and interlayer valley excitons with interlayer hopping rules. Nevertheless, interlayer excitons in TMD heterobilayers strongly depend on the local atomic registry and coupling strength, which increase the complexity of the device fabrication. Here, we report pronounced interlayer exciton emission in two-dimensional (2D) perovskite/monolayer TMD heterostructures without the need of thermal annealing or specific geometric arrangements, and the interlayer exciton emission is rather general among 2D perovskites and monolayer TMDs. Such interlayer exciton emission completely dominates the emission spectrum at 78 K regardless of the stacking sequence, suggesting the robust interlayer coupling in 2D perovskite/monolayer TMD heterostructures. Furthermore, the interlayer exciton emission shows a large blue-shift with increasing laser intensity due to the repulsive dipole-dipole interaction and can persist above 220 K. Importantly, the interlayer exciton emission also possesses robust circular polarization in chiral 2D perovskite/monolayer WSe2 heterostructures, which can be applied to manipulate the valley degree of freedom for valleytronic devices. Our findings would provide a favorable platform to explore interlayer coupling and related physical processes in 2D perovskites and TMDs and further provoke more investigations into the understanding and controlling of excitonic effects and associated optoelectronic applications in van der Waals heterostructures over a broad-range spectral response.
Collapse
Affiliation(s)
- Yingying Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zeyi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Junze Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xue Cheng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jiaqi Ma
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Haizhen Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| |
Collapse
|
22
|
Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
Collapse
Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
23
|
Ma C, Clark S, Liu Z, Liang L, Firdaus Y, Tao R, Han A, Liu X, Li LJ, Anthopoulos TD, Hersam MC, Wu T. Solution-Processed Mixed-Dimensional Hybrid Perovskite/Carbon Nanotube Electronics. ACS NANO 2020; 14:3969-3979. [PMID: 32119769 DOI: 10.1021/acsnano.9b07888] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Benefiting from their extraordinary physical properties, methylammonium lead halide perovskites (PVKs) have attracted significant attention in optoelectronics. However, the PVK-based devices suffer from low carrier mobility and high operation voltage. Here, we utilize sorted semiconducting single-walled carbon nanotubes (95% s-SWCNTs) to enhance the performance of thin-film transistors (TFTs) based on the mixed-cation perovskite (MA1-xFAx)Pb(I1-xBrx)3, enabling mixed-dimensional solution-processed electronics with high mobility (32.25 cm2/(V s)) and low voltage (∼3 V) operation. The resulting mixed-dimensional PVK/SWCNT TFTs possess ON/OFF ratios on the order of 107, enabling the fabrication of high-gain inverters.
Collapse
Affiliation(s)
- Chun Ma
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Sarah Clark
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhixiong Liu
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Liangliang Liang
- Department of Chemistry, National University of Singapore, Singapore, 119077, Singapore
| | - Yuliar Firdaus
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Ran Tao
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Ali Han
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 119077, Singapore
| | - Lain-Jong Li
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| |
Collapse
|
24
|
Min M, Hossain RF, Adhikari N, Kaul AB. Inkjet-Printed Organohalide 2D Layered Perovskites for High-Speed Photodetectors on Flexible Polyimide Substrates. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10809-10819. [PMID: 32068396 DOI: 10.1021/acsami.9b21053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The synthesis of solution-processed two-dimensional (2D) layered organohalide (CH3(CH2)3NH3)2(CH3NH3)n-1PbnI3n+1 (n = 2, 3, and 4) perovskites is presented, where inkjet printing was used to fabricate heterostructure flexible photodetector (PD) devices on polyimide (PI) substrates. Inks for the n = 4 formulation were developed to inkjet-print PD devices that were photoresponsive to broadband incoming radiation in the visible regime, where the peak photoresponsivity R was calculated to be ∼0.17 A/W, which is higher compared to prior reports, while the detectivity D was measured to be ∼3.7 × 1012 Jones at a low light intensity F ≈ 0.6 mW/cm2. The ON/OFF ratio was also high (∼2.3 × 103), while the response time τ on the rising and falling edges was measured to be τrise ≈ 24 ms and τfall ≈ 65 ms, respectively. Our strain-dependent measurements, conducted here for the first time for inkjet-printed perovskite PDs, revealed that the Ip decreased by only ∼27% with bending (radius of curvature of ∼0.262 cm-1). This work demonstrates the tremendous potential of the inkjet-printed, composition-tunable, organohalide 2D perovskite heterostructures for high-performance PDs, where the techniques are readily translatable toward flexible solar cell platforms as well.
Collapse
Affiliation(s)
- Misook Min
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
| | - Ridwan F Hossain
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Nirmal Adhikari
- Department of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas 79968, United States
| | - Anupama B Kaul
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
| |
Collapse
|
25
|
Li S, Zhang Y, Yang W, Liu H, Fang X. 2D Perovskite Sr 2 Nb 3 O 10 for High-Performance UV Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905443. [PMID: 31773828 DOI: 10.1002/adma.201905443] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 10/28/2019] [Indexed: 05/21/2023]
Abstract
2D perovskites, due to their unique properties and reduced dimension, are promising candidates for future optoelectronic devices. However, the development of stable and nontoxic 2D wide-bandgap perovskites remains a challenge. 2D all-inorganic perovskite Sr2 Nb3 O10 (SNO) nanosheets with thicknesses down to 1.8 nm are synthesized by liquid exfoliation, and for the first time, UV photodetectors (PDs) based on individual few-layer SNO sheets are investigated. The SNO sheet-based PDs exhibit excellent UV detecting performance (narrowband responsivity = 1214 A W-1 , external quantum efficiency = 5.6 × 105 %, detectivity = 1.4 × 1014 Jones @270 nm, 1 V bias), and fast response speed (trise ≈ 0.4 ms, tdecay ≈ 40 ms), outperforming most reported individual 2D sheet-based UV PDs. Furthermore, the carrier transport properties of SNO and the performance of SNO-based phototransistors are successfully controlled by gate voltage. More intriguingly, the photodetecting performance and carrier transport properties of SNO sheets are dependent on their thickness. In addition, flexible and transparent PDs with high mechanical stability are easily fabricated based on SNO nanosheet film. This work sheds light on the development of high-performance optoelectronics based on low-dimensional wide-bandgap perovskites in the future.
Collapse
Affiliation(s)
- Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yong Zhang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Wei Yang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Hui Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| |
Collapse
|
26
|
Wei S, Wang F, Zou X, Wang L, Liu C, Liu X, Hu W, Fan Z, Ho JC, Liao L. Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907527. [PMID: 31867813 DOI: 10.1002/adma.201907527] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2019] [Revised: 12/08/2019] [Indexed: 06/10/2023]
Abstract
Organic-inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum-well feature of two-dimensional (2D) Ruddlesden-Popper PVKs (2D PVKs), a promising quasi-2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand-exchange spin-coating method, quasi-2D PVK fabricated on flexible substrates exhibits a desirable type-II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >105 A W-1 at 457 nm, and broadband photoresponse (457-1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 1016 Jones, which is the record high value among all PVK-based photodetectors reported to date. Due to the resistive hopping barrier in the quasi-2D PVK, the device can also work as an optoelectronic memory for near-infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large-scale and uniform quasi-2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next-generation flexible photodetectors with unprecedented sensitivity.
Collapse
Affiliation(s)
- Shali Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200000, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Liming Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xingqiang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200000, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| |
Collapse
|
27
|
Xu H, Zhu J, Zou G, Liu W, Li X, Li C, Ryu GH, Xu W, Han X, Guo Z, Warner JH, Wu J, Liu H. Spatially Bandgap-Graded MoS 2(1-x)Se 2x Homojunctions for Self-Powered Visible-Near-Infrared Phototransistors. NANO-MICRO LETTERS 2020; 12:26. [PMID: 34138072 PMCID: PMC7770748 DOI: 10.1007/s40820-019-0361-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2019] [Accepted: 12/10/2019] [Indexed: 05/26/2023]
Abstract
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible-near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1-x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W-1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W-1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106-107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p-n junctions.
Collapse
Affiliation(s)
- Hao Xu
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
| | - Juntong Zhu
- School of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Guifu Zou
- School of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China.
| | - Wei Liu
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - Xiao Li
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK
| | - Caihong Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Gyeong Hee Ryu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Wenshuo Xu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Xiaoyu Han
- Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London, WC1H 0AJ, UK
| | - Zhengxiao Guo
- Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London, WC1H 0AJ, UK
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
- Zhejiang Institute of Research and Innovation, The University of Hong Kong, Qingshan Lake SciTech City, Hangzhou, People's Republic of China
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Jiang Wu
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK
| |
Collapse
|
28
|
Liu J, Liu F, Liu H, Hou R, Yue J, Cai J, Peng Z, Impundu J, Xie L, Li YJ, Sun L. Direct Growth of Perovskite Crystals on Metallic Electrodes for High-Performance Electronic and Optoelectronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1906185. [PMID: 31859416 DOI: 10.1002/smll.201906185] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2019] [Revised: 11/26/2019] [Indexed: 06/10/2023]
Abstract
Metal halide perovskite has attracted enhanced interest for its diverse electronic and optoelectronic applications. However, the fabrication of micro- or nanoscale crystalline perovskite functional devices remains a great challenge due to the fragility, solvent, and heat sensitivity of perovskite crystals. Here, a strategy is proposed to fabricate electronic and optoelectronic devices by directly growing perovskite crystals on microscale metallic structures in liquid phase. The well-contacted perovskite/metal interfaces ensure these heterostructures serve as high-performance field effect transistors (FETs) and excellent photodetector devices. When serving as an FET, the on/off ratio is as large as 106 and the mobility reaches up to ≈2.3 cm2 V-1 s-1 . A photodetector is displayed with high photoconductive switching ratio of ≈106 and short response time of ≈4 ms. Furthermore, the photoconductive response is proved to be band-bending-assisted separation of photoexcited carriers at the Schottky barrier of the silver and p-type perovskites.
Collapse
Affiliation(s)
- Jia Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengjing Liu
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| | - Haining Liu
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| | - Rui Hou
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattice and Microstructure, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China
| | - Junyi Yue
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinzhong Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhisheng Peng
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| | - Julienne Impundu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| | - Yong Jun Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| | - Lianfeng Sun
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Centre for Excellence in Nanoscience, National Centre for Nanoscience and Technology, Beijing, 100190, China
| |
Collapse
|
29
|
Method to control the optical properties: Band gap energy of mixed halide Organolead perovskites. ARAB J CHEM 2020. [DOI: 10.1016/j.arabjc.2017.09.002] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
|
30
|
Erkılıç U, Solís-Fernández P, Ji HG, Shinokita K, Lin YC, Maruyama M, Suenaga K, Okada S, Matsuda K, Ago H. Vapor Phase Selective Growth of Two-Dimensional Perovskite/WS 2 Heterostructures for Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40503-40511. [PMID: 31589816 DOI: 10.1021/acsami.9b13904] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Organic-inorganic hybrid perovskites have attracted increased interest owing to their exceptional optoelectronic properties and promising applications. Monolayers of transition metal dichalcogenides (TMDCs), such as tungsten disulfide (WS2), are also intriguing because of their unique optoelectronic properties and their atomically thin and flexible structures. Therefore, the combination of these different types of materials is very attractive in terms of fundamental science of interface interaction, as well as for the realization of ultrathin optoelectronic devices with high performance. Here, we demonstrate the controlled synthesis of two-dimensional (2D) perovskite/WS2 heterostructures by an all vapor-phase growth approach. This involves the chemical vapor deposition (CVD) growth of monolayer WS2, followed by the vapor-phase selective deposition of 2D PbI2 onto the WS2 with the successive conversion of PbI2 to organic-inorganic perovskite (CH3NH3PbI3). Moreover, the selective growth of the perovskite on prepatterned WS2 enables the direct synthesis of patterned heterostructures, avoiding any damage to the perovskite. The photodetectors utilizing the perovskite/WS2 heterostructure show increased responsivities compared with isolated thin perovskite obtained by conventional solution methods. The integration of 2D perovskite with TMDCs opens a new avenue to fabricate advanced devices by combining their unique properties and overcoming current processing difficulties of perovskites.
Collapse
Affiliation(s)
- Ufuk Erkılıç
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | | | - Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy , Kyoto University , Kyoto 611-0011 , Japan
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Tsukuba 305-8571 , Japan
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Tsukuba 305-8571 , Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy , Kyoto University , Kyoto 611-0011 , Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
- Global Innovation Center (GIC) , Kyushu University , Fukuoka 816-8580 , Japan
| |
Collapse
|
31
|
Zeng L, Chen Q, Zhang Z, Wu D, Yuan H, Li Y, Qarony W, Lau SP, Luo L, Tsang YH. Multilayered PdSe 2/Perovskite Schottky Junction for Fast, Self-Powered, Polarization-Sensitive, Broadband Photodetectors, and Image Sensor Application. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1901134. [PMID: 31592422 PMCID: PMC6774060 DOI: 10.1002/advs.201901134] [Citation(s) in RCA: 101] [Impact Index Per Article: 20.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2019] [Revised: 07/10/2019] [Indexed: 05/19/2023]
Abstract
Group-10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self-powered photodetector is developed with broadband response ranging from deep ultraviolet to near-infrared by combining FA1- x Cs x PbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as-assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W-1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five "P," "O," "L," "Y," and "U" images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.
Collapse
Affiliation(s)
- Long‐Hui Zeng
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Qing‐Ming Chen
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Zhi‐Xiang Zhang
- School of Electronic Science and Applied PhysicsHefei University of TechnologyHefeiAnhui230009China
| | - Di Wu
- School of Physics and Engineering and Key Laboratory of Material Physics of Ministry of EducationZhengzhou University ZhengzhouHenan450052China
| | - Huiyu Yuan
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Yan‐Yong Li
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Wayesh Qarony
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Shu Ping Lau
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| | - Lin‐Bao Luo
- School of Electronic Science and Applied PhysicsHefei University of TechnologyHefeiAnhui230009China
| | - Yuen Hong Tsang
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077China
| |
Collapse
|
32
|
Sun J, Choi Y, Choi YJ, Kim S, Park JH, Lee S, Cho JH. 2D-Organic Hybrid Heterostructures for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803831. [PMID: 30786064 DOI: 10.1002/adma.201803831] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2018] [Revised: 01/10/2019] [Indexed: 05/08/2023]
Abstract
The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.
Collapse
Affiliation(s)
- Jia Sun
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Yongsuk Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Young Jin Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jin-Hong Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Sungjoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| |
Collapse
|
33
|
Yang T, Wang X, Zheng B, Qi Z, Ma C, Fu Y, Fu Y, Hautzinger MP, Jiang Y, Li Z, Fan P, Li F, Zheng W, Luo Z, Liu J, Yang B, Chen S, Li D, Zhang L, Jin S, Pan A. Ultrahigh-Performance Optoelectronics Demonstrated in Ultrathin Perovskite-Based Vertical Semiconductor Heterostructures. ACS NANO 2019; 13:7996-8003. [PMID: 31244035 DOI: 10.1021/acsnano.9b02676] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Two-dimensional (2D) atomic layered semiconductor (e.g., transition metal dichalcogenides, TMDCs) heterostructures display diverse novel interfacial carrier properties and have potential applications in constructing next generation highly compact electronics and optoelectronics devices. However, the optoelectronic performance of this kind of semiconductor heterostructures has difficulty reaching the expectations of practical applications, due to the intrinsic weak optical absorption of the atomic-thick component layers. Here, combining the extraordinary optoelectronic properties of quantum-confined organic-inorganic hybrid perovskite (PVK), we design an ultrathin PVK/TMDC vertical semiconductor heterostructure configuration and realize the controlled vapor-phase growth of highly crystalline few-nanometer-thick PVK layers on TMDCs monolayers. The achieved ultrathin PVKs show strong thickness-induced quantum confinement effect, and simultaneously form band alignment-engineered heterointerfaces with the underlying TMDCs, resulting in highly efficient interfacial charge separation and transport. Electrical devices constructed with the as-grown ultrathin PVK/WS2 heterostructures show ambipolar transport originating from p-type PVK and n-type WS2, and exhibit outstanding optoelectronic characteristics, with the optimized response time and photoresponsivity reaching 64 μs and 11174.2 A/W, respectively, both of which are 4 orders of magnitude better than the heterostructures with a thick PVK layer, and also represent the best among all previously reported 2D layered semiconductor heterostructures. This work provides opportunities for 2D vertical semiconductor heterostructures via incorporating ultrathin PVK layers in high-performance integrated optoelectronics.
Collapse
Affiliation(s)
- Tiefeng Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Xiao Wang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Zhaoyang Qi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering , Jilin University , Changchun 130012 , PR China
| | - Yongping Fu
- Department of Chemistry , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Matthew P Hautzinger
- Department of Chemistry , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Ying Jiang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Peng Fan
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Fang Li
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Weihao Zheng
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Jie Liu
- College of Electrical and Information Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Bin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
| | - Lijun Zhang
- State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering , Jilin University , Changchun 130012 , PR China
| | - Song Jin
- Department of Chemistry , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China
| |
Collapse
|
34
|
Liu M, Zhang H, Gedamu D, Fourmont P, Rekola H, Hiltunen A, Cloutier SG, Nechache R, Priimagi A, Vivo P. Halide Perovskite Nanocrystals for Next-Generation Optoelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1900801. [PMID: 31012274 DOI: 10.1002/smll.201900801] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2019] [Revised: 03/28/2019] [Indexed: 05/10/2023]
Abstract
Colloidal perovskite nanocrystals (PNCs) combine the outstanding optoelectronic properties of bulk perovskites with strong quantum confinement effects at the nanoscale. Their facile and low-cost synthesis, together with superior photoluminescence quantum yields and exceptional optical versatility, make PNCs promising candidates for next-generation optoelectronics. However, this field is still in its early infancy and not yet ready for commercialization due to several open challenges to be addressed, such as toxicity and stability. Here, the key synthesis strategies and the tunable optical properties of PNCs are discussed. The photophysical underpinnings of PNCs, in correlation with recent developments of PNC-based optoelectronic devices, are especially highlighted. The final goal is to outline a theoretical scaffold for the design of high-performance devices that can at the same time address the commercialization challenges of PNC-based technology.
Collapse
Affiliation(s)
- Maning Liu
- Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland
| | - Haichang Zhang
- National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental Technology, School of Material Science and Engineering, Shanxi University of Technology, Hanzhong, 723001, P. R. China
| | - Dawit Gedamu
- École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada
| | - Paul Fourmont
- École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada
| | - Heikki Rekola
- Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland
| | - Arto Hiltunen
- Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland
| | - Sylvain G Cloutier
- École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada
| | - Riad Nechache
- École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada
| | - Arri Priimagi
- Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland
| | - Paola Vivo
- Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland
| |
Collapse
|
35
|
Fang C, Wang H, Shen Z, Shen H, Wang S, Ma J, Wang J, Luo H, Li D. High-Performance Photodetectors Based on Lead-Free 2D Ruddlesden-Popper Perovskite/MoS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8419-8427. [PMID: 30702273 DOI: 10.1021/acsami.8b20538] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) Ruddlesden-Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to their greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites. Here, we for the first time report on photodetectors based on few-layer MoS2 (n-type) and lead-free 2D perovskite (PEA)2SnI4 (p-type) heterostructures. The heterojunction device is capable of sensing light over the entire visible and near-infrared wavelength range with a tunable photoresponse peak. By using few-layer graphene flakes as the electrical contact, the performance of the heterostructures can be improved with a responsivity of 1100 A/W at 3 V bias, a fast response speed of ∼40 ms under zero bias, and an excellent rectification ratio of 500. Importantly, the quantum efficiency can achieve 38.2% at zero bias, which is comparable or even higher than that of 3D perovskite/2D material photodetectors. Importantly, the spectral response peak of heterojunctions gradually shifts in a wide spectral range from the band edge of MoS2 toward that of (PEA)2SnI4 with the external bias. We believe these 2D perovskite/2D material heterostructures with a great diversity represent an interesting system for investigating the fundamental optoelectronic properties and open up a new pathway toward 2D perovskite-based optoelectronic devices.
Collapse
Affiliation(s)
- Chen Fang
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Haizhen Wang
- Department of Chemical and Materials Engineering , New Mexico State University , Las Cruces , New Mexico 88003 , United States
| | - Zixi Shen
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Hongzhi Shen
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Shuai Wang
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jiaqi Ma
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jun Wang
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Hongmei Luo
- Department of Chemical and Materials Engineering , New Mexico State University , Las Cruces , New Mexico 88003 , United States
| | - Dehui Li
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| |
Collapse
|
36
|
Lin CH, Cheng B, Li TY, Retamal JRD, Wei TC, Fu HC, Fang X, He JH. Orthogonal Lithography for Halide Perovskite Optoelectronic Nanodevices. ACS NANO 2019; 13:1168-1176. [PMID: 30588789 DOI: 10.1021/acsnano.8b05859] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
3D organic-inorganic hybrid halide perovskites have attracted great interest due to their impressive optoelectronic properties. Recently, the emergence of 2D layered hybrid perovskites, with their excellent and tunable optoelectronic behavior, has encouraged researchers to develop the next generation of optoelectronics based on these 2D materials. However, device fabrication methods of scalable patterning on both types of hybrid perovskites are still lacking as these materials are readily damaged by the organic solvents in standard lithographic processes. We conceived the orthogonal processing and patterning method: Chlorobenzene and hexane, which are orthogonal to hybrid perovskites, are utilized in modified electron beam lithography (EBL) processes to fabricate perovskite-based devices without compromising their electronic or optical characteristics. As a proof-of-concept, we used the orthogonal EBL technique to fabricate a 2D layered single-crystal (C6H5C2H4NH3)2PbI4 photodetector featuring nanoscale patterned electrodes and superior photodetection ability with responsivity of 5.4 mA/W and detectivity of 1.07 × 1013 cm Hz1/2/W. Such orthogonal processing and patterning methods are believed to fully enable the high-resolution, high-throughput fabrication of complex perovskite-based electronics in the near future.
Collapse
Affiliation(s)
- Chun-Ho Lin
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Bin Cheng
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Ting-You Li
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - José Ramón Durán Retamal
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Tzu-Chiao Wei
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Hui-Chun Fu
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Xiaosheng Fang
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
| | - Jr-Hau He
- Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division , King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| |
Collapse
|
37
|
Bellus MZ, Yang Z, Zereshki P, Hao J, Lau SP, Zhao H. Efficient hole transfer from monolayer WS 2 to ultrathin amorphous black phosphorus. NANOSCALE HORIZONS 2019; 4:236-242. [PMID: 32254162 DOI: 10.1039/c8nh00234g] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The newly developed van der Waals materials allow fabrication of multilayer heterostructures. Early efforts have mostly focused on heterostructures formed by similar materials. More recently, however, attempts have been made to expand the types of materials, such as topological insulators and organic semiconductors. Here we introduce an amorphous semiconductor to the material library for constructing van der Waals heterostructures. Samples composed of 2 nm amorphous black phosphorus synthesized by pulsed laser deposition and monolayer WS2 obtained by mechanical exfoliation were fabricated by dry transfer. Photoluminescence measurements revealed that photocarriers excited in WS2 of the heterostructure transfer to amorphous black phosphorus, in the form of either energy or charge transfer, on a time scale shorter than the exciton lifetime in WS2. Transient absorption measurements further indicate that holes can efficiently transfer from WS2 to amorphous black phosphorus. However, interlayer electron transfer in either direction was found to be absent. The lack of electron transfer from amorphous black phosphorus to WS2 is attributed to the localized electronic states in the amorphous semiconductor. Furthermore, we show that a hexagonal BN bilayer can effectively change the hole transfer process.
Collapse
Affiliation(s)
- Matthew Z Bellus
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, USA.
| | | | | | | | | | | |
Collapse
|
38
|
Fu Y, Zheng W, Wang X, Hautzinger MP, Pan D, Dang L, Wright JC, Pan A, Jin S. Multicolor Heterostructures of Two-Dimensional Layered Halide Perovskites that Show Interlayer Energy Transfer. J Am Chem Soc 2018; 140:15675-15683. [DOI: 10.1021/jacs.8b07843] [Citation(s) in RCA: 76] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Yongping Fu
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People’s Republic of China
| | - Xiaoxia Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People’s Republic of China
| | - Matthew P. Hautzinger
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Dongxu Pan
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Lianna Dang
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - John C. Wright
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People’s Republic of China
| | - Song Jin
- Department of Chemistry, University of Wisconsin−Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| |
Collapse
|
39
|
Leng K, Abdelwahab I, Verzhbitskiy I, Telychko M, Chu L, Fu W, Chi X, Guo N, Chen Z, Chen Z, Zhang C, Xu QH, Lu J, Chhowalla M, Eda G, Loh KP. Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation. NATURE MATERIALS 2018; 17:908-914. [PMID: 30202109 DOI: 10.1038/s41563-018-0164-8] [Citation(s) in RCA: 150] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2018] [Accepted: 08/07/2018] [Indexed: 05/24/2023]
Abstract
Due to their layered structure, two-dimensional Ruddlesden-Popper perovskites (RPPs), composed of multiple organic/inorganic quantum wells, can in principle be exfoliated down to few and single layers. These molecularly thin layers are expected to present unique properties with respect to the bulk counterpart, due to increased lattice deformations caused by interface strain. Here, we have synthesized centimetre-sized, pure-phase single-crystal RPP perovskites (CH3(CH2)3NH3)2(CH3NH3)n-1PbnI3n+1 (n = 1-4) from which single quantum well layers have been exfoliated. We observed a reversible shift in excitonic energies induced by laser annealing on exfoliated layers encapsulated by hexagonal boron nitride. Moreover, a highly efficient photodetector was fabricated using a molecularly thin n = 4 RPP crystal, showing a photogain of 105 and an internal quantum efficiency of ~34%. Our results suggest that, thanks to their dynamic structure, atomically thin perovskites enable an additional degree of control for the bandgap engineering of these materials.
Collapse
Affiliation(s)
- Kai Leng
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Solar Energy Research Institute of Singapore (SERIS), Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Ibrahim Abdelwahab
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, Singapore
| | - Ivan Verzhbitskiy
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Mykola Telychko
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Leiqiang Chu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Wei Fu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Xiao Chi
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Na Guo
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Zhihui Chen
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Zhongxin Chen
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, Singapore
| | - Chun Zhang
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Manish Chhowalla
- Materials Science and Engineering, Rutgers University, Piscataway, NJ, USA
| | - Goki Eda
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
- Solar Energy Research Institute of Singapore (SERIS), Singapore, Singapore.
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore.
| |
Collapse
|
40
|
Gu J, Wu J, Jin C, Sun X, Yin B, Zhang GC, Wen B, Gao F. Solvent engineering for high conversion yields of layered raw materials into large-scale freestanding hybrid perovskite nanowires. NANOSCALE 2018; 10:17722-17729. [PMID: 30209492 DOI: 10.1039/c8nr04833a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hybrid organic-inorganic perovskite nanowires have received considerable attention for applications in optoelectronic fields; however, practical implementation of perovskite nanowires into optoelectronic devices is often hindered by low product yields, scaled-up synthesis, or overall lack of synthetic control. Herein, we report novel insights into large-scale freestanding lead halide perovskite nanowires using a series of solvent effects. A facile pathway for converting layered raw materials to nanowires with high conversion yields can facilitate the large-scale applications of nanowires, which could help us understand the unique aspects of the formation chemistry of the materials. We introduced a two-step process to obtain perovskite nanowires without an impurity phase that first involves the formation of Pb-containing nanowires with the poor solvent drip method. Subsequently, the as-prepared Pb-containing precursors can be used as morphology templates for converting completely into perovskite nanowires with high conversion yields of 83% through a series of solvent effects, such as solvent-driven, solvent-removing, solvent-exchange and solvent-growth. The synthetic strategy was demonstrated to be applicable for other perovskite-based materials, which can offer a comprehensive understanding of the formation mechanism of perovskite-based materials.
Collapse
Affiliation(s)
- Jianmin Gu
- Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, China.
| | | | | | | | | | | | | | | |
Collapse
|
41
|
Yusoff ARBM, Nazeeruddin MK. Low-Dimensional Perovskites: From Synthesis to Stability in Perovskite Solar Cells. ADVANCED ENERGY MATERIALS 2018; 8:1702073. [DOI: 10.1002/aenm.201702073] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Affiliation(s)
- Abd. Rashid bin Mohd. Yusoff
- Group for Molecular Engineering of Functional Materials; Institute of Chemical Sciences and Engineering; École Polytechnique Fédérale de Lausanne; Lausanne CH-1015 Switzerland
- Advanced Display Research Center; Department of Information Display; Kyung Hee University; Dongdaemoon-gu 130-701 Seoul South Korea
| | - Mohammad Khaja Nazeeruddin
- Group for Molecular Engineering of Functional Materials; Institute of Chemical Sciences and Engineering; École Polytechnique Fédérale de Lausanne; Lausanne CH-1015 Switzerland
| |
Collapse
|
42
|
Li L, Li J, Lan S, Lin G, Wang J, Wang H, Xuan Y, Luo H, Li D. Two-Step Growth of 2D Organic-Inorganic Perovskite Microplates and Arrays for Functional Optoelectronics. J Phys Chem Lett 2018; 9:4532-4538. [PMID: 30049209 DOI: 10.1021/acs.jpclett.8b01861] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) perovskites have recently attracted intensive interest for their great stability against moisture, oxygen, and illumination compared with their three-dimensional (3D) counterparts. However, their incompatibility with a typical lithography process makes it difficult to fabricate integrated device arrays and extract basic optical and electronic parameters from individual devices. Here, we develop a combination of solution synthesis and a gas-solid-phase intercalation strategy to achieve hexagonal-shaped 2D perovskite microplates and arrays for functional optoelectronics. The 2D perovskite microplates were achieved by first synthesizing the lead iodide (PbI2) microplates from an aqueous solution and then following with intercalation via the vapor transport method. This method further allows us to synthesize arrays of 2D perovskite microplates and create individual 2D perovskite microplate-based photodetectors. In particular, chlorine (Cl) can be efficiently incorporated into the microplates, resulting in significantly improved performance of the 2D perovskite microplate-based photodetectors.
Collapse
Affiliation(s)
- Lei Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Junze Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Shangui Lan
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Gaoming Lin
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Jun Wang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Haizhen Wang
- Department of Chemical and Materials Engineering , New Mexico State University , Las Cruces , New Mexico 88003 , United States
| | - Yining Xuan
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Hongmei Luo
- Department of Chemical and Materials Engineering , New Mexico State University , Las Cruces , New Mexico 88003 , United States
| | - Dehui Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan 430074 , China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| |
Collapse
|
43
|
Qi X, Zhang Y, Ou Q, Ha ST, Qiu CW, Zhang H, Cheng YB, Xiong Q, Bao Q. Photonics and Optoelectronics of 2D Metal-Halide Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800682. [PMID: 29952060 DOI: 10.1002/smll.201800682] [Citation(s) in RCA: 59] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2018] [Revised: 04/06/2018] [Indexed: 05/25/2023]
Abstract
In the growing list of 2D semiconductors as potential successors to silicon in future devices, metal-halide perovskites have recently joined the family. Unlike other conversional 2D covalent semiconductors such as graphene, transition metal dichalcogenides, black phosphorus, etc., 2D perovskites are ionic materials, affording many distinct properties of their own, including high photoluminescence quantum efficiency, balanced large exciton binding energy and oscillator strength, and long carrier diffusion length. These unique properties make 2D perovskites potential candidates for optoelectronic and photonic devices such as solar cells, light-emitting diodes, photodetectors, nanolasers, waveguides, modulators, and so on, which represent a relatively new but exciting and rapidly expanding area of research. In this Review, the recent advances in emerging 2D metal-halide perovskites and their applications in the fields of optoelectronics and photonics are summarized and insights into the future direction of these fields are offered.
Collapse
Affiliation(s)
- Xiang Qi
- College of Electronic Science and Technology, College of Optoelectronics Engineering, SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
- Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, P. R. China
| | - Yupeng Zhang
- College of Electronic Science and Technology, College of Optoelectronics Engineering, SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
- Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia
| | - Qingdong Ou
- Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia
| | - Son Tung Ha
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Cheng-Wei Qiu
- College of Electronic Science and Technology, College of Optoelectronics Engineering, SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Han Zhang
- College of Electronic Science and Technology, College of Optoelectronics Engineering, SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
| | - Yi-Bing Cheng
- Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qiaoliang Bao
- Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia
| |
Collapse
|
44
|
Ou Q, Zhang Y, Wang Z, Yuwono JA, Wang R, Dai Z, Li W, Zheng C, Xu ZQ, Qi X, Duhm S, Medhekar NV, Zhang H, Bao Q. Strong Depletion in Hybrid Perovskite p-n Junctions Induced by Local Electronic Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705792. [PMID: 29493028 DOI: 10.1002/adma.201705792] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2017] [Revised: 12/25/2017] [Indexed: 05/19/2023]
Abstract
A semiconductor p-n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic-inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p-n junction induced by local electronic doping at the surface of individual CH3 NH3 PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W-1 .
Collapse
Affiliation(s)
- Qingdong Ou
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Yupeng Zhang
- College of Electronic Science and Technology and College of Optoelectronics Engineering, Shenzhen University, Shenzhen, 518000, P. R. China
| | - Ziyu Wang
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Jodie A Yuwono
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Rongbin Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, P. R. China
- Institut für Physik, Humboldt-Universität zu Berlin, 12489, Berlin, Germany
| | - Zhigao Dai
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
- Laboratory of Printable Functional Nanomaterials and Printed Electronics, School of Printing and Packaging, Wuhan University, Wuhan, 430072, P. R. China
| | - Wei Li
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Changxi Zheng
- Department of Civil Engineering, Monash University, Clayton, Victoria, 3800, Australia
| | - Zai-Quan Xu
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Xiang Qi
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, P. R. China
| | - Steffen Duhm
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, P. R. China
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Han Zhang
- College of Electronic Science and Technology and College of Optoelectronics Engineering, Shenzhen University, Shenzhen, 518000, P. R. China
| | - Qiaoliang Bao
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| |
Collapse
|
45
|
|
46
|
Zhang ZX, Tong XW, Gao Y, Xie C, Tsang YH, Luo LB, Wu YC. Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe 2/Perovskite Heterojunctions. J Phys Chem Lett 2018; 9:1185-1194. [PMID: 29464954 DOI: 10.1021/acs.jpclett.8b00266] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/ Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W-1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications.
Collapse
Affiliation(s)
- Zhi-Xiang Zhang
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Xiao-Wei Tong
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yang Gao
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Chao Xie
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yuen Hong Tsang
- Department of Applied Physics and Materials Research Center , Hong Kong Polytechnic University , Hung Hom, Kowloon , Hong Kong 99077 , PR China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yu-Cheng Wu
- School of Materials Science and Engineering , Hefei University of Technology , Hefei , Anhui 230009 , PR China
| |
Collapse
|
47
|
Wu JB, Lin ML, Cong X, Liu HN, Tan PH. Raman spectroscopy of graphene-based materials and its applications in related devices. Chem Soc Rev 2018; 47:1822-1873. [PMID: 29368764 DOI: 10.1039/c6cs00915h] [Citation(s) in RCA: 522] [Impact Index Per Article: 87.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Graphene-based materials exhibit remarkable electronic, optical, and mechanical properties, which has resulted in both high scientific interest and huge potential for a variety of applications. Furthermore, the family of graphene-based materials is growing because of developments in preparation methods. Raman spectroscopy is a versatile tool to identify and characterize the chemical and physical properties of these materials, both at the laboratory and mass-production scale. This technique is so important that most of the papers published concerning these materials contain at least one Raman spectrum. Thus, here, we systematically review the developments in Raman spectroscopy of graphene-based materials from both fundamental research and practical (i.e., device applications) perspectives. We describe the essential Raman scattering processes of the entire first- and second-order modes in intrinsic graphene. Furthermore, the shear, layer-breathing, G and 2D modes of multilayer graphene with different stacking orders are discussed. Techniques to determine the number of graphene layers, to probe resonance Raman spectra of monolayer and multilayer graphenes and to obtain Raman images of graphene-based materials are also presented. The extensive capabilities of Raman spectroscopy for the investigation of the fundamental properties of graphene under external perturbations are described, which have also been extended to other graphene-based materials, such as graphene quantum dots, carbon dots, graphene oxide, nanoribbons, chemical vapor deposition-grown and SiC epitaxially grown graphene flakes, composites, and graphene-based van der Waals heterostructures. These fundamental properties have been used to probe the states, effects, and mechanisms of graphene materials present in the related heterostructures and devices. We hope that this review will be beneficial in all the aspects of graphene investigations, from basic research to material synthesis and device applications.
Collapse
Affiliation(s)
- Jiang-Bin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | | | | | | | | |
Collapse
|
48
|
Abstract
While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic-inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.
Collapse
Affiliation(s)
- Huan Wang
- Department of Chemistry and Nano Science, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul 03760, Korea.
| | | |
Collapse
|
49
|
Solís-Fernández P, Bissett M, Ago H. Synthesis, structure and applications of graphene-based 2D heterostructures. Chem Soc Rev 2018; 46:4572-4613. [PMID: 28691726 DOI: 10.1039/c7cs00160f] [Citation(s) in RCA: 100] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.
Collapse
|
50
|
Wang F, Wang Z, Yin L, Cheng R, Wang J, Wen Y, Shifa TA, Wang F, Zhang Y, Zhan X, He J. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chem Soc Rev 2018; 47:6296-6341. [DOI: 10.1039/c8cs00255j] [Citation(s) in RCA: 156] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.
Collapse
|