Single-Crystalline SrRuO3 Nanomembranes: A Platform for Flexible Oxide Electronics

Delamination-Assisted Ultrafast Wrinkle Formation in a Freestanding Film

Freestanding films provide a versatile platform for materials engineering thanks to additional structural motifs not found in films with a substrate. A ubiquitous example is wrinkles, yet little is known about how they can develop over as fast as a few picoseconds due to a lack of experimental probes to visualize their dynamics in real time on the nanoscopic scale. Here, we use time-resolved electron diffraction to directly observe light-activated wrinkling formation in freestanding La2/3Ca1/3MnO3 films. Via a "lock-in" analysis of oscillations in the diffraction peak position, intensity, and width, we quantitatively reconstructed how wrinkles develop on the time scale of lattice vibration. Contrary to the common assumption of fixed boundary conditions, we found that wrinkle development is associated with ultrafast delamination at the film boundaries. Our work provides a generic protocol to quantify wrinkling dynamics in freestanding films and highlights the importance of the film-substrate interaction in determining the properties of freestanding structures.

Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process

HIGHLIGHTS

The (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate with 0° and 45° twist angle. By applying a 7.2 kV cm-1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample. Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.

Freestanding Oxide Membranes for Epitaxial Ferroelectric Heterojunctions

Since facile routes to fabricate freestanding oxide membranes were previously established, tremendous efforts have been made to further improve their crystallinity, and fascinating physical properties have been also reported in heterointegrated freestanding membranes. Here, we demonstrate our synthetic recipe to manufacture highly crystalline perovskite SrRuO₃ freestanding membranes using new infinite-layer perovskite SrCuO₂ sacrificial layers. To accomplish this, SrRuO₃/SrCuO₂ bilayer thin films are epitaxially grown on SrTiO₃ (001) substrates, and the topmost SrRuO₃ layer is chemically exfoliated by etching the SrCuO₂ template layer. The as-exfoliated SrRuO₃ membranes are mechanically transferred to various nonoxide substrates for the subsequent BaTiO₃ film growth. Finally, freestanding heteroepitaxial junctions of ferroelectric BaTiO₃ and metallic SrRuO₃ are realized, exhibiting robust ferroelectricity. Intriguingly, the enhancement of piezoelectric responses is identified in freestanding BaTiO₃/SrRuO₃ heterojunctions with mixed ferroelectric domain states. Our approaches will offer more opportunities to develop heteroepitaxial freestanding oxide membranes with high crystallinity and enhanced functionality.

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

Two-dimensional electron gas (2DEG) at the interface of amorphous Al₂O₃/SrTiO₃ (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.

Flexible strategy of epitaxial oxide thin films

Applying functional oxide thin films to flexible devices is of great interests within the rapid development of information technology. The challenges involve the contradiction between the high-temperature growth of high-quality oxide films and low melting point of the flexible supports. This review summarizes the developed methods to fabricate high-quality flexible oxide thin films with novel functionalities and applications. We start from the fabrication methods, e.g. direct growth on flexible buffered metal foils and layered mica, etching and transfer approach, as well as remote epitaxy technique. Then, various functionalities in flexible oxide films will be introduced, specifically, owing to the mechanical flexibility, some unique properties can be induced in flexible oxide films. Taking the advantages of the excellent physical properties, the flexible oxide films have been employed in various devices. Finally, future perspectives in this research field will be proposed to further develop this field from fabrication, functionality to device.

Stress Analysis and Q-Factor of Free-Standing (La,Sr)MnO3 Oxide Resonators

High-sensitivity nanomechanical sensors are mostly based on silicon technology and related materials. The use of functional materials, such as complex oxides having strong interplay between structural, electronic, and magnetic properties, may open possibilities for developing new mechanical transduction schemes and for further enhancement of the device performances. The integration of these materials into micro/nano-electro-mechanical systems (MEMS/NEMS) is still at its very beginning and critical basic aspects related to the stress state and the quality factors of mechanical resonators made from epitaxial oxide thin films need to be investigated. Here, suspended micro-bridges are realized from single-crystal thin films of (La_0.7 ,Sr_0.3 )MnO₃ (LSMO), a prototypical complex oxide showing ferromagnetic ground state at room temperature. These devices are characterized in terms of resonance frequency, stress state, and Q-factor. LSMO resonators are highly stressed, with a maximum value of ≈260 MPa. The temperature dependence of their mechanical resonance is discussed considering both thermal strain and the temperature-dependent Young's modulus. The measured Q-factors reach few tens of thousands at room temperature, with indications of further improvements by optimizing the fabrication protocols. These results demonstrate that complex oxides are suitable to realize high Q-factor mechanical resonators, paving the way toward the development of full-oxide MEMS/NEMS sensors.

Strain Modulation of Perpendicular Magnetic Anisotropy in Wrinkle-Patterned (Co/Pt)5/BaTiO3 Magnetoelectric Heterostructures

The rapid development of spintronics requires the devices to be flexible, to be used in wearable electronics, and controllable, to be used with magnetoelectric (ME) structures. However, the clamping effect inevitably leads to a decreased ME effect on the rigid substrate, and it remains challenging to directly prepare high-quality ferroelectric (FE) membranes on the widely used flexible substrate such as MICA or polyimide (PI). Here, periodic wrinkle-patterned flexible (Co/Pt)₅/BaTiO₃ (BTO) perpendicular magnetic anisotropy (PMA) heterostructures were prepared using the water-soluble method. The high-quality single-crystal BTO membrane ensures that intricate wrinkles do not fracture and a high ME coefficient is achievable. The transferred sample that is released from the clamping effect shows an enhanced ME effect in both in-plane and out-of-plane directions, with the ME coefficient reaching up to 68 Oe °C^-1. The ferromagnetic resonance (FMR) field of the flexible sample can be tuned by tensile strain up to 272 Oe. The finely controlled wrinkle shows periodic strain variations at peak and valley regions that switch the PMA magnetic domain motion as an effective control method. The proposed ultraflexible wrinkle sample shows great potential for combining multiple magnetization tuning approaches, allowing it to potentially serve as a tunable high-density 3D storage prototype.

Freestanding complex-oxide membranes

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.

Thin-Film Ferroelectrics

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.

Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates

Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO₂ buffer layers from TiO₂/VO₂/TiO₂ by H₂O₂, millimeter-size TiO₂ single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO₂ epitaxial growth on the transferred TiO₂ nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\triangle \rho /\rho$$\end{document}△ρ/ρ > 10³) even in ultrathin (<10 nm) VO₂ films that are not achievable via direct growth on Si. This discovery offers a synthetic strategy to release the new single-crystalline oxide nanomembranes and an integration scheme to exploit emergent functionality from epitaxial oxide heterostructures in mature silicon devices.

Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.

Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO₃ thin films using Sr₃Al₂O₆ water-sacrificial layer. The epitaxial Sr₃Al₂O₆(011) and Sr₃Al₂O₆(111) layers were realized on SrTiO₃(011) and SrTiO₃(111), respectively. Subsequently, SrRuO₃ films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO₃(011)_pc and SrRuO₃(111)_pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

Strain Gradient Elasticity in SrTiO3 Membranes: Bending versus Stretching

Young's modulus determines the mechanical loads required to elastically stretch a material and also the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. The associated energy cost can additionally contribute to elasticity via strain gradients, particularly at small length scales where they are geometrically enhanced. Here, we present nanomechanical measurements of freely suspended SrTiO₃ crystalline membrane drumheads. We observe an unexpected nonmonotonic thickness dependence of Young's modulus upon small deflections. Furthermore, the modulus inferred from a predominantly bending deformation is three times larger than that of a predominantly stretching deformation for membranes thinner than 20 nm. In this regime we extract a strain gradient elastic coupling of ∼2.2 μN, which could be used in new operational regimes of nanoelectro-mechanics.

High Yield Transfer of Clean Large-Area Epitaxial Oxide Thin Films

In this work, we have developed a new method for manipulating and transferring up to 5 mm × 10 mm epitaxial oxide thin films. The method involves fixing a PET frame onto a PMMA attachment film, enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr₃Al₂O₆ sacrificial layer. The crystallinity, surface morphology, continuity, and purity of the films are all preserved in the transfer process. We demonstrate the applicability of our method for three different film compositions and structures of thickness ~ 100 nm. Furthermore, we show that by using epitaxial nanocomposite films, lift-off yield is improved by ~ 50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the composites. This work shows important steps towards large-scale perovskite thin-film-based electronic device applications.

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO₃ , production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm^-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.

van der Waals oxide heteroepitaxy for soft transparent electronics

The quest for multifunctional, low-power and environment friendly electronics has brought research on materials to the forefront. For instance, as the emerging field of transparent flexible electronics is set to greatly impact our daily lives, more stringent requirements are being imposed on functional materials. Inherently flexible polymers and metal foil templates have yielded limited success due to their incompatible high-temperature growth and non-transparency, respectively. Although the epitaxial-transfer strategy has shown promising results, it suffers from tedious and complicated lift-off-transfer processes. The advent of graphene, in particular, and 2D layered materials, in general, with ultrathin scalability has revolutionized this field. Herein, we review the direct growth of epitaxial functional oxides on flexible transparent mica substrates via van der Waals heteroepitaxy, which mitigates misfit strain and substrate clamping for soft transparent electronics applications. Recent advances in practical applications of flexible and transparent electronic elements are discussed. Finally, several important directions, challenges and perspectives for commercialization are also outlined. We anticipate that this promising strategy to build transparent flexible optoelectronic devices and improve their performance will open up new avenues for researchers to explore.

Towards a Large-Area Freestanding Single-Crystal Ferroelectric BaTiO3 Membrane

The fabrication and transfer of freestanding single-crystal ferroelectric membranes deserve intensive investigations as to their potential applications in flexible wearable devices, such as flexible data storage devices and varied sensors in E-skin configurations. In this report, we have shown a comprehensive study approach to the acquisition of a large-area freestanding single-crystal ferroelectric BaTiO3 by the Sr3Al2O6 scarification layer method. By controlling the thickness of the BaTiO3 and Sr3Al2O6, the exposed area of the Sr3Al2O6 interlayer, and the utilization of an additional electrode La2/3Sr1/3MnO3 layer, the crack density on the freestanding BaTiO3 can be dramatically decreased from 24.53% to almost none; then, a more than 700 × 530 μm2 area high-quality freestanding BaTiO3 membrane can be achieved. Our results offer a clear and repeatable technology routine for the acquisition of a flexible large-area ferroelectric membrane, which should be instructive to other transition metal oxides as well. Our study can confidently boost flexible device fabrication based on single-crystal transition metal oxides.

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La_0.7Sr_0.3MnO₃ and an electroactive substrate of ferroelectric 0.68Pb(Mg_1/3Nb_2/3)O₃-0.32PbTiO₃ in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.

Key properties of transition metal perovskite oxides are degraded after epitaxial growth on ferroelectric substrates due to lattice-mismatch strain. Here, the authors use epitaxial lift-off and transfer to overcome this problem and demonstrate electric field control of a bulk-like magnetization.

Transfer of Epitaxial SrTiO3 Nanothick Layers Using Water-Soluble Sacrificial Perovskite Oxides

The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO₃ onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO₃. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO₃. The nanothick SrTiO₃-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.

Heterogeneous integration of single-crystalline complex-oxide membranes

Complex-oxide materials exhibit a vast range of functional properties desirable for next-generation electronic, spintronic, magnetoelectric, neuromorphic, and energy conversion storage devices^1-4. Their physical functionalities can be coupled by stacking layers of such materials to create heterostructures and can be further boosted by applying strain^5-7. The predominant method for heterogeneous integration and application of strain has been through heteroepitaxy, which drastically limits the possible material combinations and the ability to integrate complex oxides with mature semiconductor technologies. Moreover, key physical properties of complex-oxide thin films, such as piezoelectricity and magnetostriction, are severely reduced by the substrate clamping effect. Here we demonstrate a universal mechanical exfoliation method of producing freestanding single-crystalline membranes made from a wide range of complex-oxide materials including perovskite, spinel and garnet crystal structures with varying crystallographic orientations. In addition, we create artificial heterostructures and hybridize their physical properties by directly stacking such freestanding membranes with different crystal structures and orientations, which is not possible using conventional methods. Our results establish a platform for stacking and coupling three-dimensional structures, akin to two-dimensional material-based heterostructures, for enhancing device functionalities^8,9.

Atomic-Scale Metal-Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

The metal-insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO₃ ultrathin films is reported. Uniform and effective termination engineering at the SrRuO₃ (001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO₂ , a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO₃ monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.

Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film

Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.

Magnon profile on SrRuO3 films studied by inelastic neutron scattering

In this study, the inelastic neutron scattering probe of SIKA in ANSTO is employed to investigate the magnon dispersion curve in ferromagnetic SrRuO3 single crystal epitaxial films and to better understand the underlying mechanisms. This report presents the successful measurement of a magnon peak from the SrRuO3 films which contained an amount of material of only 0.9 mg. We reveal one significant magnon dispersion curve along [002] following the quadraticE ∝ Q 2 ) relation, which shows a magnon gap of 0.32 meV. We have discussed several possible mechanisms, such as the higher symmetry structure and the impurity levels, which may contribute to this smaller gap.

Direct Wavelength-Selective Optical and Electron-Beam Lithography of Functional Inorganic Nanomaterials

Direct optical lithography of functional inorganic nanomaterials (DOLFIN) is a photoresist-free method for high-resolution patterning of inorganic nanocrystals (NCs) that has been demonstrated using deep UV (DUV, 254 nm) photons. Here, we expand the versatility of DOLFIN by designing a series of photochemically active NC surface ligands for direct patterning using various photon energies including DUV, near-UV (i-line, 365 nm), blue (h-line, 405 nm), and visible (450 nm) light. We show that the exposure dose for DOLFIN can be ∼30 mJ/cm², which is small compared to most commercial photopolymer resists. Patterned nanomaterials can serve as highly robust optical diffraction gratings. We also introduce a general approach for resist-free direct electron-beam lithography of functional inorganic nanomaterials (DELFIN) which enables all-inorganic NC patterns with feature size down to 30 nm, while preserving the optical and electronic properties of patterned NCs. The designed ligand chemistries and patterning techniques offer a versatile platform for nano- and micron-scale additive manufacturing, complementing the existing toolbox for device fabrication.

Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions

Ferroelectric tunnel junction (FTJ) based memristors exhibiting continuous electric field controllable resistance states have been considered promising candidates for future high-density memories and advanced neuromorphic computational architectures. However, the use of rigid single crystal substrate and high temperature growth of the epitaxial FTJ thin films constitutes the main obstacles to using this kind of heterostructure in flexible computing devices. Here, we report the integration of centimeter-scale single crystalline FTJs on flexible plastic substrates, by water-etching based epitaxial oxide membrane lift-off and the following transfer. The resulting highly flexible FTJ membranes retain the single-crystalline structure along with stable and switchable ferroelectric polarization as the grown-on single crystal substrate state. We show that the obtained flexible memristors, i.e., FTJs on plastic substrates, present high speed and low voltage mediated memristive behaviors with resistance changes over 500% and are stable against shape change. This work is an essential step toward the realization of epitaxial ultrathin ferroelectric oxide film-based electronics on large-area, flexible, and affordable substrates.

Freestanding crystalline oxide perovskites down to the monolayer limit

Two-dimensional (2D) materials such as graphene and transition-metal dichalcogenides reveal the electronic phases that emerge when a bulk crystal is reduced to a monolayer^1-4. Transition-metal oxide perovskites host a variety of correlated electronic phases^5-12, so similar behaviour in monolayer materials based on transition-metal oxide perovskites would open the door to a rich spectrum of exotic 2D correlated phases that have not yet been explored. Here we report the fabrication of freestanding perovskite films with high crystalline quality almost down to a single unit cell. Using a recently developed method based on water-soluble Sr₃Al₂O₆ as the sacrificial buffer layer^13,14 we synthesize freestanding SrTiO₃ and BiFeO₃ ultrathin films by reactive molecular beam epitaxy and transfer them to diverse substrates, in particular crystalline silicon wafers and holey carbon films. We find that freestanding BiFeO₃ films exhibit unexpected and giant tetragonality and polarization when approaching the 2D limit. Our results demonstrate the absence of a critical thickness for stabilizing the crystalline order in the freestanding ultrathin oxide films. The ability to synthesize and transfer crystalline freestanding perovskite films without any thickness limitation onto any desired substrate creates opportunities for research into 2D correlated phases and interfacial phenomena that have not previously been technically possible.

Role of electron-magnon interaction in non-Fermi liquid behavior of SrRuO3

SrRuO₃ is a popular material extensively used as a bottom electrode in various applications, however, a few problems which will certainly change the interface band structure and greatly alter the device's property are still not fully understood, such as the change of carrier types at a certain temperature and the quasiparticle scattering for non-Fermi liquid behavior below ferromagnetic transition temperature. In this study, magnetic, transport (electrical and thermal) properties and x-ray photoemission spectra have been used to understand the role of quasiparticle interactions in the SrRuO₃ bulk system. At the Fermi level, the hybridization of Ru4dt _2g   ↓  and O2p  bands form a typical two band system. In order to explain the problems as mentioned, our present work reveals that there must be an impurity band that couples with the bands around Fermi level and serves as a charge reservoir. In the present case, the impurity is attributed to the Ru vacancies. As a result, the conduction electrons scatter strongly with the Ru vacancies and couple with the Ru magnons to give rise to a dominant electron-magnon coupling that overwhelms the electron-phonon coupling in the temperature range of 90-150 K.

Assembly and Self-Assembly of Nanomembrane Materials-From 2D to 3D

Nanoscience and nanotechnology offer great opportunities and challenges in both fundamental research and practical applications, which require precise control of building blocks with micro/nanoscale resolution in both individual and mass-production ways. The recent and intensive nanotechnology development gives birth to a new focus on nanomembrane materials, which are defined as structures with thickness limited to about one to several hundred nanometers and with much larger (typically at least two orders of magnitude larger, or even macroscopic scale) lateral dimensions. Nanomembranes can be readily processed in an accurate manner and integrated into functional devices and systems. In this Review, a nanotechnology perspective of nanomembranes is provided, with examples of science and applications in semiconductor, metal, insulator, polymer, and composite materials. Assisted assembly of nanomembranes leads to wrinkled/buckled geometries for flexible electronics and stacked structures for applications in photonics and thermoelectrics. Inspired by kirigami/origami, self-assembled 3D structures are constructed via strain engineering. Many advanced materials have begun to be explored in the format of nanomembranes and extend to biomimetic and 2D materials for various applications. Nanomembranes, as a new type of nanomaterials, allow nanotechnology in a controllable and precise way for practical applications and promise great potential for future nanorelated products.

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr ₃Al ₂O ₆ on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr ₃Al ₂O ₆ layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.