1
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Woo SY, Shao F, Arora A, Schneider R, Wu N, Mayne AJ, Ho CH, Och M, Mattevi C, Reserbat-Plantey A, Moreno Á, Sheinfux HH, Watanabe K, Taniguchi T, Michaelis de Vasconcellos S, Koppens FHL, Niu Z, Stéphan O, Kociak M, García de Abajo FJ, Bratschitsch R, Konečná A, Tizei LHG. Engineering 2D Material Exciton Line Shape with Graphene/ h-BN Encapsulation. NANO LETTERS 2024; 24:3678-3685. [PMID: 38471109 DOI: 10.1021/acs.nanolett.3c05063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton line shape and charge state. Fano-like asymmetric spectral features are produced in WS2, MoSe2, and WSe2 van der Waals heterostructures combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe2/graphene with a neutral exciton red shift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
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Affiliation(s)
- Steffi Y Woo
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - Fuhui Shao
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Ashish Arora
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
- Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, 411008 Pune, India
| | - Robert Schneider
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Nianjheng Wu
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, 91405 Orsay, France
| | - Andrew J Mayne
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, 91405 Orsay, France
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Mauro Och
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Antoine Reserbat-Plantey
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- Université Côte d'Azur, CNRS, CRHEA, 06560 Valbonne, Sophia-Antipolis, France
| | - Álvaro Moreno
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
| | - Hanan Herzig Sheinfux
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- Department of Physics, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | | | - Frank H L Koppens
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Zhichuan Niu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Odile Stéphan
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - Mathieu Kociak
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - F Javier García de Abajo
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Andrea Konečná
- Central European Institute of Technology, Brno University of Technology, Brno 612 00, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Brno 616 69, Czech Republic
| | - Luiz H G Tizei
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
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2
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Woo WJ, Seo S, Yoon H, Lee S, Kim D, Park S, Kim Y, Sohn I, Park J, Chung SM, Kim H. Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition. J Chem Phys 2024; 160:104701. [PMID: 38456534 DOI: 10.1063/5.0196668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Accepted: 02/15/2024] [Indexed: 03/09/2024] Open
Abstract
Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature. Therefore, the metal-insulator-semiconductor (MIS) architecture has been proposed as a method to fabricate a reliable and stable contact with low RC. Herein, we introduce a strategy to fabricate MIS contact based on atomic layer deposition (ALD) to dramatically reduce the RC of single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by modulating the precursor injection pressures even at low temperatures of 150 °C. We discovered, for the first time, that film uniformity critically affects RC without altering the film thickness. Additionally, we can add functionality to the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 induced by IPA as the oxidant in the ALD process. Through a highly uniform interlayer combined with strong doping, the contact resistance is improved by more than two orders of magnitude compared to that of other MoS2 FETs fabricated in this study.
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Affiliation(s)
- Whang Je Woo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Seunggi Seo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
| | - Hwi Yoon
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Sanghun Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Donghyun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Seonyeong Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Youngjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Inkyu Sohn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - JuSang Park
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
| | - Seung-Min Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea
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3
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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4
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Cao ZL, Guo XH, Yao KL, Zhu L. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe 2/MoSe 2/NbSe 2 heterojunction. NANOSCALE 2023; 15:17029-17035. [PMID: 37846516 DOI: 10.1039/d3nr04514e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
Due to the ability to reduce the gate length of field-effect transistors (FETs) down to sub-10 nm without obviously affecting the performance of the device, the utilization of two-dimensional (2D) semiconductor materials as channel materials for FETs is of great interest. However, in-plane 2D/2D heterojunction FETs have received less attention in previous studies than vertical van der Waals heterojunction devices. Based on the above reasons, this study has investigated the transport properties of an in-plane NbSe2/MoSe2/NbSe2 heterojunction FET with different gate lengths by using ab initio quantum transport simulation. The results reveal that a gate length of sub-9 nm gives the device a low subthreshold swing down to 62 mV dec-1 and a high on-state current up to 1040 μA μm-1. Most importantly, the on-state current, delay time, and power dissipation of the FET with the optimized channel length can nearly meet or even exceed the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors. The findings for this FET can provide the design and development guidance for other in-plane heterojunction electrical devices in the post-Moore era.
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Affiliation(s)
- Zeng-Lin Cao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Xiao-Hui Guo
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Kai-Lun Yao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Lin Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
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5
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Huang Z, Luo Z, Deng Z, Yang M, Gao W, Yao J, Zhao Y, Dong H, Zheng Z, Li J. Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. SMALL METHODS 2023; 7:e2201571. [PMID: 36932942 DOI: 10.1002/smtd.202201571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 02/20/2023] [Indexed: 06/09/2023]
Abstract
With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi2 Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W-1 , an excellent detectivity of 2.18 × 1012 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.
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Affiliation(s)
- Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Ziwen Deng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huafeng Dong
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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6
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Kwak IH, Kwon IS, Kim JY, Zewdie GM, Lee SJ, Yoo SJ, Kim JG, Park J, Kang HS. Full Composition Tuning of W 1-xNb xSe 2 Alloy Nanosheets to Promote the Electrocatalytic Hydrogen Evolution Reaction. ACS NANO 2022; 16:13949-13958. [PMID: 36098669 DOI: 10.1021/acsnano.2c03157] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Composition modulation of transition metal dichalcogenides is an effective way to engineer their crystal/electronic structures for expanded applications. Here, fully composition-tuned W1-xNbxSe2 alloy nanosheets were produced via colloidal synthesis. These nanosheets ultimately exhibited a notable transition between WSe2 and NbSe2 hexagonal phases at x = 0.6. As x approaches 0.6, point doping is converted into cluster doping and eventually separated domains of WSe2 and NbSe2. Extensive density functional theory calculations predicted the composition-dependent crystal structures and phase transitions, consistently with the experiments. The electrocatalytic activity for the hydrogen evolution reaction (HER) in acidic electrolyte was significantly enhanced at x = 0.2, which was linked with the d-band center. The Gibbs free energy for the H adsorption at various basal and edge sites supported the enhanced HER performance of the metallic alloy nanosheets. We suggested that the dispersed doping structures of Nb atoms resulted in the best HER performance. Our findings highlight the significance of composition tuning in enhancing the catalytic activity of alloys.
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Affiliation(s)
- In Hye Kwak
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Ik Seon Kwon
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Ju Yeon Kim
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Getasew Mulualem Zewdie
- Institute for Application of Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea
| | - Seung Jae Lee
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Seung Jo Yoo
- Division of Scientific Instrumentation & Management, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea
| | - Jin-Gyu Kim
- Division of Scientific Instrumentation & Management, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea
| | - Jeunghee Park
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Hong Seok Kang
- Department of Nano and Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea
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7
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Wu Z, Zhu Y, Wang F, Ding C, Wang Y, Zhan X, He J, Wang Z. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming. NANO LETTERS 2022; 22:7094-7103. [PMID: 36053055 DOI: 10.1021/acs.nanolett.2c02136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices exhibit high electrical contact resistances, restricting their practical applications. Here, we report a general contact-resistance-lowering strategy by constructing vertical metal-semiconductor-metal memristor structures at the contact regions and setting them into a nonvolatile low-resistance state through a memristive forming process. Through this, we reduce the contact resistances of MoS2 field-effect transistors (FETs) by at least one order of magnitude and improve the on-state current densities of MoTe2 FETs by about two orders of magnitude. We also demonstrate that this strategy is applicable to other two-dimensional semiconductors, including MoSe2, WS2, and WSe2, and a variety of contact metals, including Au, Cu, Ni, and Pd. The good stability and universality indicate the great potential for technological applications.
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Affiliation(s)
- Zilong Wu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuhan Zhu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Chuyun Ding
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Zhou C, Yuan S, Zhao W, Guo W, Ren H. Improved nitrogen reduction activity of NbSe 2 tuned by edge chirality. RSC Adv 2022; 12:22131-22138. [PMID: 36043109 PMCID: PMC9364079 DOI: 10.1039/d2ra03464f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2022] [Accepted: 08/01/2022] [Indexed: 11/21/2022] Open
Abstract
Efficient catalysts for the electroreduction of N2 to NH3 are of paramount importance for sustainable ammonia production. Recently, it was reported that NbSe2 nanosheets exhibit an excellent catalytic activity for nitrogen reduction under ambient conditions. However, existing theoretical calculations suggested an overpotential over 3.0 V, which is too high to interpret the experimental observations. To reveal the underlying mechanism of the high catalytic activity, in this work, we assessed NbSe2 edges with different chirality and Se vacancies by using first principles calculations. Our results show that N2 can be efficiently reduced to NH3 on a pristine zigzag edge via the enzymatic pathway with an overpotential of 0.45 V. Electronic structure analysis demonstrates that the N2 molecule is activated by the back-donation mechanism. The efficient tuning of the local chemical environments by edge chirality provides a promising approach for catalyst design.
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Affiliation(s)
- Chen Zhou
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Saifei Yuan
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Wenyue Guo
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
| | - Hao Ren
- School of Materials Science and Engineering, China University of Petroleum (East China) Qingdao 266580 Shandong China
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9
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Jang J, Ra HS, Ahn J, Kim TW, Song SH, Park S, Taniguch T, Watanabe K, Lee K, Hwang DK. Fermi-Level Pinning-Free WSe 2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109899. [PMID: 35306686 DOI: 10.1002/adma.202109899] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 03/16/2022] [Indexed: 06/14/2023]
Abstract
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-function electrode that completely eliminates Fermi-level pinning at metal-semiconductor interfaces. Here, a creation of clean van der Waals contacts is demonstrated, wherein a metallic 2D material, chlorine-doped SnSe2 (Cl-SnSe2 ), is used as the high-work-function contact, providing an interface that is free of defects and Fermi-level pinning. Such clean contacts made from Cl-SnSe2 can pose nearly ideal Schottky barrier heights, following the Schottky-Mott limit and thus permitting polarity-controllable transistors. With the integration of Cl-SnSe2 as contacts, WSe2 transistors exhibit pronounced p-type characteristics, which are distinctly different from those of the devices with evaporated metal contacts, where n-type transport is observed. Finally, this ability to control the polarity enables the fabrication of functional logic gates and circuits, including inverter, NAND, and NOR.
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Affiliation(s)
- Jisu Jang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Hyun-Soo Ra
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Jongtae Ahn
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Tae Wook Kim
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Seung Ho Song
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Takashi Taniguch
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
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10
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Li S, Hong J, Gao B, Lin Y, Lim HE, Lu X, Wu J, Liu S, Tateyama Y, Sakuma Y, Tsukagoshi K, Suenaga K, Taniguchi T. Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2004438. [PMID: 34105285 PMCID: PMC8188190 DOI: 10.1002/advs.202004438] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Revised: 01/24/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jinhua Hong
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Bo Gao
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yung‐Chang Lin
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Hong En Lim
- Department of PhysicsTokyo Metropolitan UniversityHachioji192‐0397Japan
| | - Xueyi Lu
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jing Wu
- Institute of Materials Research and EngineeringAgency for ScienceTechnology and ResearchSingapore138634Singapore
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN)College of Chemistry and Chemical EngineeringHunan UniversityChangsha410082P. R. China
| | - Yoshitaka Tateyama
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yoshiki Sakuma
- Research Center for Functional MaterialsNational Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazu Suenaga
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Takaaki Taniguchi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
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11
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Kwon IS, Kwak IH, Kim JY, Debela TT, Park YC, Park J, Kang HS. Concurrent Vacancy and Adatom Defects of Mo 1-xNb xSe 2 Alloy Nanosheets Enhance Electrochemical Performance of Hydrogen Evolution Reaction. ACS NANO 2021; 15:5467-5477. [PMID: 33703885 DOI: 10.1021/acsnano.1c00171] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Earth-abundant transition metal dichalcogenide nanosheets have emerged as an excellent catalyst for electrochemical water splitting to generate H2. Alloying the nanosheets with heteroatoms is a promising strategy to enhance their catalytic performance. Herein, we synthesized hexagonal (2H) phase Mo1-xNbxSe2 nanosheets over the whole composition range using a solvothermal reaction. Alloying results in a variety of atomic-scale crystal defects such as Se vacancies, metal vacancies, and adatoms. The defect content is maximized when x approaches 0.5. Detailed structure analysis revealed that the NbSe2 bonding structures in the alloy phase are more disordered than the MoSe2 ones. Compared to MoSe2 and NbSe2, Mo0.5Nb0.5Se2 exhibits much higher electrocatalytic performance for hydrogen evolution reaction. First-principles calculation was performed for the formation energy in the models for vacancies and adatoms, supporting that the alloy phase has more defects than either NbSe2 or MoSe2. The calculation predicted that the separated NbSe2 domain at x = 0.5 favors the concurrent formation of Nb/Se vacancies and adatoms in a highly cooperative way. Moreover, the Gibbs free energy along the reaction path suggests that the enhanced HER performance of alloy nanosheets originates from the higher concentration of defects that favor H atom adsorption.
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Affiliation(s)
- Ik Seon Kwon
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - In Hye Kwak
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Ju Yeon Kim
- Institute for Application of Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea
| | - Tekalign Terfa Debela
- Institute for Application of Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea
| | - Yun Chang Park
- Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-806, Republic of Korea
| | - Jeunghee Park
- Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea
| | - Hong Seok Kang
- Department of Nano and Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea
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12
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Jeon YR, Choi J, Kwon JD, Park MH, Kim Y, Choi C. Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe 2 Material. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10161-10170. [PMID: 33591167 DOI: 10.1021/acsami.0c18784] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe2) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO2/Pt, Ag/Ti/HfO2/Pt, and Ag/NbSe2/HfO2/Pt were studied as both memory and neuromorphic devices. Both the inserted Ti and NbSe2 buffer layers effectively control the stochastic Ag-ion diffusion, leading to suppressed variation of switching characteristics, which is a critical issue in an atomic switch device. Especially, the device with the 2D NbSe2 buffer layer strikingly enhanced the device reliability in both endurance and retention. In conjunction with scanning transmission electron microscopy (STEM) and energy-dispersive spectrometry (EDS) analysis of the control of the Ag-ion migration, it was understood that filament connection is interrelated with the SET and RESET processes. Besides resistive behaviors in the memory device, various synapse functions such as spike-rate-dependent plasticity (SRDP), forgetting curve, potentiation, and depression were demonstrated with an atomic switch with the 2D NbSe2 buffer layer. Furthermore, the emulated long-term synaptic property was simulated using the MNIST 28 × 28 pixel database. Using adopting a CVD 2D NbSe2 blocking layer, the stochastic Ag-ion diffusion behavior is well-controlled and therefore stable switching and synapse functions are attained.
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Affiliation(s)
- Yu-Rim Jeon
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jungmin Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
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13
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Stanley LJ, Chuang HJ, Zhou Z, Koehler MR, Yan J, Mandrus DG, Popović D. Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10594-10602. [PMID: 33617715 DOI: 10.1021/acsami.0c21440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (ns) dependence of the conductivity σ(T, ns) demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
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Affiliation(s)
- Lily J Stanley
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Hsun-Jen Chuang
- Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48202, United States
| | - Zhixian Zhou
- Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48202, United States
| | - Michael R Koehler
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
- Oak Ridge National Lab, Oak Ridge, Tennessee 37830, United States
| | - David G Mandrus
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
- Oak Ridge National Lab, Oak Ridge, Tennessee 37830, United States
| | - Dragana Popović
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
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14
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Li W, Huang J, Han B, Xie C, Huang X, Tian K, Zeng Y, Zhao Z, Gao P, Zhang Y, Yang T, Zhang Z, Sun S, Hou Y. Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS 2 and Effectively Altering the Electronic Structure and Phononic Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001080. [PMID: 32832362 PMCID: PMC7435234 DOI: 10.1002/advs.202001080] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 05/16/2020] [Indexed: 05/26/2023]
Abstract
Substitutional doping of layered transition metal dichalcogenides (TMDs) has been proved to be an effective route to alter their intrinsic properties and achieve tunable bandgap, electrical conductivity and magnetism, thus greatly broadening their applications. However, achieving valid substitutional doping of TMDs remains a great challenge to date. Herein, a distinctive molten-salt-assisted chemical vapor deposition (MACVD) method is developed to match the volatilization of the dopants perfectly with the growth process of monolayer MoS2, realizing the substitutional doping of transition metal Fe, Co, and Mn. This doping strategy effectively alters the electronic structure and phononic properties of the pristine MoS2. In addition, a temperature-dependent Raman spectrum is employed to explore the effect of dopants on the lattice dynamics and first-order temperature coefficient of monolayer MoS2, and this doping effect is illustrated in depth combined with the theoretical calculation. This work provides an intriguing and powerful doping strategy for TMDs through employing molten salt in the CVD system, paving the way for exploring new properties of 2D TMDs and extending their applications into spintronics, catalytic chemistry and photoelectric devices.
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Affiliation(s)
- Wei Li
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics Peking University Beijing 100871 China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
| | - Xiaoxiao Huang
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Kesong Tian
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Yi Zeng
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Zijing Zhao
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics Peking University Beijing 100871 China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China
| | - Shengnan Sun
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
| | - Yanglong Hou
- Department of Materials Science and Engineering, College of Engineering Peking University Beijing 100871 China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD) Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT) Beijing 100871 China
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15
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Zhou X, Yang J, Zhong M, Xia Q, Li B, Duan X, Wei Z. Intercalation of Two-dimensional Layered Materials. Chem Res Chin Univ 2020. [DOI: 10.1007/s40242-020-0185-0] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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16
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Jang HY, Nam JH, Yoon J, Kim Y, Park W, Cho B. One-step H 2S reactive sputtering for 2D MoS 2/Si heterojunction photodetector. NANOTECHNOLOGY 2020; 31:225205. [PMID: 32053801 DOI: 10.1088/1361-6528/ab7606] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8-12 nm deposited thickness range.
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Affiliation(s)
- Hye Yeon Jang
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
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17
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Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems. NANOMATERIALS 2020; 10:nano10010088. [PMID: 31906481 PMCID: PMC7022853 DOI: 10.3390/nano10010088] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2019] [Revised: 12/28/2019] [Accepted: 12/31/2019] [Indexed: 01/21/2023]
Abstract
Despite extensive investigations of a wide variety of artificial synapse devices aimed at realizing a neuromorphic hardware system, the identification of a physical parameter that modulates synaptic plasticity is still required. In this context, a novel two-dimensional architecture consisting of a NbSe2/WSe2/Nb2O5 heterostructure placed on an SiO2/p+ Si substrate was designed to overcome the limitations of the conventional silicon-based complementary metal-oxide semiconductor technology. NbSe2, WSe2, and Nb2O5 were used as the metal electrode, active channel, and conductance-modulating layer, respectively. Interestingly, it was found that the post-synaptic current was successfully modulated by the thickness of the interlayer Nb2O5, with a thicker interlayer inducing a higher synapse spike current and a stronger interaction in the sequential pulse mode. Introduction of the Nb2O5 interlayer can facilitate the realization of reliable and controllable synaptic devices for brain-inspired integrated neuromorphic systems.
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18
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Rigosi AF, Hill HM, Krylyuk S, Nguyen NV, Hight Walker AR, Davydov AV, Newell DB. Dielectric Properties of Nb xW 1-xSe 2 Alloys. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2019; 124:1-10. [PMID: 34877178 PMCID: PMC7343519 DOI: 10.6028/jres.124.035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Accepted: 11/25/2019] [Indexed: 06/13/2023]
Abstract
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry.
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Affiliation(s)
- Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Heather M Hill
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | | | - Nhan V Nguyen
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | | | - Albert V Davydov
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - David B Newell
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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19
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Song Y, Yao B, Li Y, Ding Z, Sun H, Zhang Z, Zhang L, Zhao H. Self-Organized Back Surface Field to Improve the Performance of Cu 2ZnSn(S,Se) 4 Solar Cells by Applying P-Type MoSe 2:Nb to the Back Electrode Interface. ACS APPLIED MATERIALS & INTERFACES 2019; 11:31851-31859. [PMID: 31313903 DOI: 10.1021/acsami.9b08946] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells have been encountering a bottleneck period since the champion power conversion efficiency (PCE) of 12.7% was achieved by Kim et al. in 2014. One of the critical factors that impede its further development is the relatively low open-circuit voltage (VOC) caused by serious interface carrier recombination. In this regard, back surface field (BSF) employment is a feasible strategy to address the VOC issue of CZTSSe solar cells to some extent. Here, we demonstrated a self-organized BSF introduced by prompting interfacial MoSe2 layer transition from inherent n-type to desirable p-type with Nb doping (p-MoSe2:Nb). The BSF application can significantly reduce the carrier recombination at the back electrode interface (BEI) and lower down the back contact barrier height. The PCE of the corresponding cell was improved from 4.72 to 7.15% because of the enhancement of VOC and fill factor, primarily stemming from the doubling aspects of increased shunt resistance (RSh), decreased series resistance (RS), and alleviative recombination velocity of the BEI induced by the BSF. Our results suggest that introducing a BSF fulfilled with p-MoSe2:Nb is a facile and promising route to improve the performance of CZTSSe thin-film solar cells.
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Affiliation(s)
| | | | | | | | | | - Zhenzhong Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , No. 3888 Dongnanhu Road , Changchun 130033 , China
| | - Ligong Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , No. 3888 Dongnanhu Road , Changchun 130033 , China
| | - Haifeng Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , No. 3888 Dongnanhu Road , Changchun 130033 , China
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20
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Lin H, Zhu Q, Shu D, Lin D, Xu J, Huang X, Shi W, Xi X, Wang J, Gao L. Growth of environmentally stable transition metal selenide films. NATURE MATERIALS 2019; 18:602-607. [PMID: 30858568 DOI: 10.1038/s41563-019-0321-8] [Citation(s) in RCA: 51] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2018] [Accepted: 02/11/2019] [Indexed: 06/09/2023]
Abstract
Two-dimensional transition metal selenides (TMSs) possess fascinating physical properties. However, many as-prepared TMSs are environmentally unstable and limited in sample size, which greatly hinder their wide applications in high-performance electrical devices. Here we develop a general two-step vapour deposition method and successfully grow different TMS films with controllable thickness, wafer size and high quality. The superconductivity of the grown NbSe2 film is comparable with sheets exfoliated from bulk materials, and can maintain stability after a variety of harsh treatments, which are ascribed to the absence of oxygen during the whole growth process. Such environmental stability can greatly simplify the fabrication procedure for device applications, and should be of both fundamental and technological significance in developing TMS-based devices.
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Affiliation(s)
- Huihui Lin
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Qi Zhu
- Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Dajun Shu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Dongjing Lin
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wei Shi
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jiangwei Wang
- Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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21
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Nowakowski K, van Bremen R, Zandvliet HJW, Bampoulis P. Control of the metal/WS 2 contact properties using 2-dimensional buffer layers. NANOSCALE 2019; 11:5548-5556. [PMID: 30860526 DOI: 10.1039/c9nr00574a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Transition metal dichalcogenides (TMDC) have recently attracted much attention as a promising platform for the realization of 2-dimensional (2D) electronic devices. One of the major challenges for their wide-scale application is the control of the potential barrier at the metal/TMDC junction. Using conductive atomic force microscopy (c-AFM) we have investigated modifications of the Schottky barrier height (SBH) across a Pt/WS2 junction by the introduction of thin buffer layers of graphene and MoSe2. While graphene greatly reduces the contact resistance in both bias directions, thin layers of MoSe2 lower the Schottky barrier and leave the rectifying properties of the junction intact. We have studied the dependence of the transport properties on the thickness of the graphene and MoSe2 buffer layers. In both cases, the charge transport characteristics can be tailored by varying the buffer layer thickness. The edge of single layer graphene is observed to form an ohmic contact to the underlying WSe2 substrate. This study demonstrates that the introduction of atomically thin MoSe2 and graphene buffer layers is a feasible and elegant method to control the Schottky barrier when contacting TMDCs. The results are important for the fabrication of devices utilizing 2D materials.
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Affiliation(s)
- Krystian Nowakowski
- Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
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22
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Design of chalcopyrite-type CuFeSe2 nanocrystals: Microstructure, magnetism, photoluminescence and sensing performances. J SOLID STATE CHEM 2019. [DOI: 10.1016/j.jssc.2019.01.015] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Zhang Z, Gong Y, Zou X, Liu P, Yang P, Shi J, Zhao L, Zhang Q, Gu L, Zhang Y. Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (VSe 2/MX 2) and Their Band Alignments. ACS NANO 2019; 13:885-893. [PMID: 30586285 DOI: 10.1021/acsnano.8b08677] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) metal-semiconductor transition-metal dichalcogenide (TMDC) vertical heterostructures play a crucial role in device engineering and contact tuning fields, while their direct integration still challenging. Herein, a robust epitaxial growth method is designed to construct multiple lattice-matched 2D metal-semiconductor TMDC vertical stacks (VSe2/MX2, M: Mo, W; X: S, Se) by a two-step chemical vapor deposition method. Intriguingly, the metallic VSe2 preferred to nucleate and extend from the energy-favorable edge site of the semiconducting MX2 underlayer to form VSe2/MX2 vertical heterostructures. This growth behavior was also confirmed by density functional theory calculations of the initial adsorption of VSe2 adatoms. In particular, the formation of Schottky-diode or Ohmic contact-type band alignments was detected for the stacks between VSe2 and p-type WSe2 or n-type MoSe2, respectively. This work hereby provides insights into the direct integration, band-alignment engineering, and potential applications of such 2D metal-semiconductor stacks in next-generation electronics, optoelectronic devices, and energy-related fields.
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Affiliation(s)
- Zhepeng Zhang
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Yue Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xiaolong Zou
- Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen 518055 , P. R. China
| | - Porun Liu
- Centre for Clean Environment and Energy , Griffith University , Gold Coast 4222 , Australia
| | - Pengfei Yang
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jianping Shi
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Liyun Zhao
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , P. R. China
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 106] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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25
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Durán Retamal JR, Periyanagounder D, Ke JJ, Tsai ML, He JH. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides. Chem Sci 2018; 9:7727-7745. [PMID: 30429982 PMCID: PMC6194502 DOI: 10.1039/c8sc02609b] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2018] [Accepted: 09/23/2018] [Indexed: 11/30/2022] Open
Abstract
Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, dangling bond-free nature, electrostatic integrity, and tunable wide band gaps enable low power consumption, low leakage, ambipolar transport, high mobility, superconductivity, robustness against short channel effects and tunneling in highly scaled devices. However, the progress of 2D-TMDs has been hampered by severe charge transport issues arising from undesired phenomena occurring at the surfaces and interfaces. Therefore, this review provides three distinct engineering strategies embodied with distinct innovative approaches to optimize both carrier injection and transport. First, contact engineering involves 2D-metal contacts and tunneling interlayers to overcome metal-induced interface states and the Fermi level pinning effect caused by low vacancy energy formation. Second, dielectric engineering covers high-k dielectrics, ionic liquids or 2D-insulators to screen scattering centers caused by carrier traps, imperfections and rough substrates, to finely tune the Fermi level across the band gap, and to provide dangling bond-free media. Third, material engineering focuses on charge transfer via substitutional, chemical and plasma doping to precisely modulate the carrier concentration and to passivate defects while preserving material integrity. Finally, we provide an outlook of the conceptual and technical achievements in 2D-TMDs to give a prospective view of the future development of highly scaled nanoelectronic devices.
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Affiliation(s)
- José Ramón Durán Retamal
- Computer, Electrical and Mathematical Sciences and Engineering , King Abdullah University of Science and Technology , Thuwal , 23955-6900 , Kingdom of Saudi Arabia .
| | - Dharmaraj Periyanagounder
- Computer, Electrical and Mathematical Sciences and Engineering , King Abdullah University of Science and Technology , Thuwal , 23955-6900 , Kingdom of Saudi Arabia .
| | - Jr-Jian Ke
- Computer, Electrical and Mathematical Sciences and Engineering , King Abdullah University of Science and Technology , Thuwal , 23955-6900 , Kingdom of Saudi Arabia .
| | - Meng-Lin Tsai
- Computer, Electrical and Mathematical Sciences and Engineering , King Abdullah University of Science and Technology , Thuwal , 23955-6900 , Kingdom of Saudi Arabia .
| | - Jr-Hau He
- Computer, Electrical and Mathematical Sciences and Engineering , King Abdullah University of Science and Technology , Thuwal , 23955-6900 , Kingdom of Saudi Arabia .
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26
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Seo J, Hwang KJ, Baik SI, Lee S, Cho B, Jo E, Choi M, Hahm MG, Kim YJ. Three-Dimensional Atomistic Tomography of W-Based Alloyed Two-Dimensional Transition Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2018; 10:30640-30648. [PMID: 30117322 DOI: 10.1021/acsami.8b09604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Increased interest in two-dimensional (2D) materials and heterostructures for use as components of electrical devices has led to the use of an atomically mixed phase between semiconducting and metallic transition metal dichalcogenides that exhibited enhanced interfacial characteristics. To understand the lattice structure and properties of 2D materials on the atomic scale, diverse characterization methods such as Raman spectroscopy, high-resolution transmission electron microscopy (HR-TEM), and X-ray photoemission spectroscopy (XPS) have been applied. However, determination of the exact chemical distribution, which is a critical factor for the interfacial layer, was hindered by limitations of these typical methods. In this work, atom-probe tomography (APT) was introduced for the first time to analyze the three-dimensional atomic distribution and composition variation of the atomic-scale multilayered alloy structure W xNb(1- x)Se2. Composition profiles and theoretical calculations for each atom demonstrated the reaction kinetics and stoichiometric inhomogeneity of the W xNb(1- x)Se2 layer. The role of the intermediate layer was investigated by fabrication of a WSe2-based field-effect transistor. Introduction of W xNb(1- x)Se2 between metallic NbSe2 and semiconducting WSe2 layers resulted in improved charge transport with lowering of the contact barrier.
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Affiliation(s)
- Juyeon Seo
- Department of Materials Science and Engineering , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Kyo-Jin Hwang
- Department of Materials Science and Engineering , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Sung-Il Baik
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , Evanston , Illinois 60208 , United States
| | - Suryeon Lee
- Department of Materials Science and Engineering , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Byungjin Cho
- Department of Advanced Materials Engineering , Chungbuk National University , 1 Chungdae-ro , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
| | - Euihyun Jo
- Department of Physics , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Minseok Choi
- Department of Physics , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
| | - Yoon-Jun Kim
- Department of Materials Science and Engineering , Inha University , 100 Inha-ro , Michuhol-gu, Incheon 22212 , Republic of Korea
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Zhang Y, Yin L, Chu J, Shifa TA, Xia J, Wang F, Wen Y, Zhan X, Wang Z, He J. Edge-Epitaxial Growth of 2D NbS 2 -WS 2 Lateral Metal-Semiconductor Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803665. [PMID: 30133881 DOI: 10.1002/adma.201803665] [Citation(s) in RCA: 57] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2018] [Revised: 07/16/2018] [Indexed: 05/28/2023]
Abstract
2D metal-semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high-frequency devices. Although, a series of p-n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS2 -WS2 lateral metal-semiconductor heterostructures via a "two-step" CVD method is realized. Both the lateral and vertical NbS2 -WS2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as-grown NbS2 -WS2 heterostructures. The existence of the NbS2 -WS2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD-based heterostructures and enlightens the possibility of applications based on 2D metal-semiconductor heterostructures.
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Affiliation(s)
- Yu Zhang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
| | - Junwei Chu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Tofik Ahmed Shifa
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
| | - Jing Xia
- key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
| | - Yao Wen
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, No.19A Yuquan Road, Beijing, 100049, China
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28
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Zhang X, Lai Z, Ma Q, Zhang H. Novel structured transition metal dichalcogenide nanosheets. Chem Soc Rev 2018; 47:3301-3338. [PMID: 29671441 DOI: 10.1039/c8cs00094h] [Citation(s) in RCA: 147] [Impact Index Per Article: 24.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their unique properties and great potential in a wide range of applications. Great efforts have been devoted to the preparation of novel-structured TMD nanosheets by engineering their intrinsic structures at the atomic scale. Until now, a lot of new-structured TMD nanosheets, such as vacancy-containing TMDs, heteroatom-doped TMDs, TMD alloys, 1T'/1T phase and in-plane TMD crystal-phase heterostructures, TMD heterostructures and Janus TMD nanosheets, have been prepared. These materials exhibit unique properties and hold great promise in various applications, including electronics/optoelectronics, thermoelectrics, catalysis, energy storage and conversion and biomedicine. This review focuses on the most recent important discoveries in the preparation, characterization and application of these new-structured ultrathin 2D layered TMDs.
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Affiliation(s)
- Xiao Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
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29
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Zhang Q, Ma J, Lei M, Quhe R. Metallic MoN Layer and its Application as Anode for Lithium-ion Batteries. NANOTECHNOLOGY 2018; 29:165402. [PMID: 29406304 DOI: 10.1088/1361-6528/aaad48] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Recently, two-dimensional (2D) metallic MoN was manufactured successfully in experiment, while its intrinsic properties remain to be explored theoretically in depth. The intrinsic properties of MoN monolayer are investigated by first-principles calculations. Distinct geometric properties of the outmost Mo and N surfaces are discovered. We predict an extremely high work function of 6.3 eV of the N surface, which indicates great value of the 2D MoN for application in the semiconductor industry. We further explore the potential of 2D MoN as anode material for lithium-ion batteries. It is found that adsorption energy of the single Li atom on MoN surface can be as low as - 4.04 eV. The small diffusion barriers (0.41 eV) and high theoretical maximum capacity (406 mAh∙g-1 with the inclusion of multilayer adsorption) all imply the outstanding lithium-ion batteries performance by 2D MoN.
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Affiliation(s)
- Qiaoxuan Zhang
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing, CHINA
| | - Jiachen Ma
- Beijing University of Posts and Telecommunications, Beijing, Beijing, CHINA
| | - Ming Lei
- School of Science, Beijing University of Posts and Telecommunications, Beijing, CHINA
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing, Beijing, CHINA
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30
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Wen H, Li H, He S, Chen F, Ding E, Liu S, Wang B, Peng Y. Constructing two-dimensional CuFeSe 2@Au heterostructured nanosheets with an amorphous core and a crystalline shell for enhanced near-infrared light water oxidation. NANOSCALE 2018; 10:2380-2387. [PMID: 29334111 DOI: 10.1039/c7nr07632k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Although substantial efforts have been made toward the synthesis of noble metal-semiconductor heteronanostructures, direct in situ synthesis of two-dimensional (2D) core-shell semiconductor@noble metal heterostructured nanosheets remains largely unexplored. Herein, we report the synthesis of a novel 2D core-shell CuFeSe2@Au heterostructured nanosheet with an amorphous core and a crystalline shell based on the reversed growth of Au nanosheets on the CuFeSe2 frameworks under near-infrared (NIR) illumination. The nanosheet exhibits strong absorbance in the NIR region, and the valence band top of CuFeSe2@Au nanosheets is higher than the oxidation potential of O2/H2O. Owing to the unique structural features, the resulting nanosheets show excellent photocatalytic activity and high stability toward water oxidation with an O2 generation rate up to 3.48 mmol h-1 g-1 compared to those of the constituent materials under NIR light irradiation (λ > 850 nm). This work brings new opportunities to prepare 2D core-shell semiconductor@noble metal heterostructured nanosheets, which can be applied as photocatalysts toward water splitting and solar energy conversion at long wavelengths.
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Affiliation(s)
- Huang Wen
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China.
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31
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Cai Z, Liu B, Zou X, Cheng HM. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures. Chem Rev 2018; 118:6091-6133. [PMID: 29384374 DOI: 10.1021/acs.chemrev.7b00536] [Citation(s) in RCA: 440] [Impact Index Per Article: 73.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China.,Shenyang National Laboratory for Materials Sciences, Institute of Metal Research , Chinese Academy of Sciences , Shenyang , Liaoning 110016 , People's Republic of China.,Center of Excellence in Environmental Studies (CEES) , King Abdulaziz University , Jeddah 21589 , Saudi Arabia
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32
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Hu Z, Wu Z, Han C, He J, Ni Z, Chen W. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev 2018; 47:3100-3128. [DOI: 10.1039/c8cs00024g] [Citation(s) in RCA: 429] [Impact Index Per Article: 71.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.
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Affiliation(s)
- Zehua Hu
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Zhangting Wu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Cheng Han
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Jun He
- School of Physics and Electronics
- Central South University
- Changsha
- China
| | - Zhenhua Ni
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Wei Chen
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
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33
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Tang HL, Chiu MH, Tseng CC, Yang SH, Hou KJ, Wei SY, Huang JK, Lin YF, Lien CH, Li LJ. Multilayer Graphene-WSe 2 Heterostructures for WSe 2 Transistors. ACS NANO 2017; 11:12817-12823. [PMID: 29182852 DOI: 10.1021/acsnano.7b07755] [Citation(s) in RCA: 36] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene-MoS21-3 and graphene-WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene-TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene-WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG-WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.
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Affiliation(s)
- Hao-Ling Tang
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
- Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 300, Taiwan
| | - Ming-Hui Chiu
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Chien-Chih Tseng
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Shih-Hsien Yang
- Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 300, Taiwan
- Department of Physics, National Chung Hsing University , Taichung 402, Taiwan
| | - Kuan-Jhih Hou
- Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 300, Taiwan
| | - Sung-Yen Wei
- SulfurScience Technology Co. Ltd , Taipei 106, Taiwan
| | - Jing-Kai Huang
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University , Taichung 402, Taiwan
| | - Chen-Hsin Lien
- Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 300, Taiwan
| | - Lain-Jong Li
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
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34
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Molybdenum Dichalcogenides for Environmental Chemical Sensing. MATERIALS 2017; 10:ma10121418. [PMID: 29231879 PMCID: PMC5744353 DOI: 10.3390/ma10121418] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2017] [Revised: 12/04/2017] [Accepted: 12/05/2017] [Indexed: 11/17/2022]
Abstract
2D transition metal dichalcogenides are attracting a strong interest following the popularity of graphene and other carbon-based materials. In the field of chemical sensors, they offer some interesting features that could potentially overcome the limitation of graphene and metal oxides, such as the possibility of operating at room temperature. Molybdenum-based dichalcogenides in particular are among the most studied materials, thanks to their facile preparation techniques and promising performances. The present review summarizes the advances in the exploitation of these MoX₂ materials as chemical sensors for the detection of typical environmental pollutants, such as NO₂, NH₃, CO and volatile organic compounds.
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Son SB, Kim Y, Kim A, Cho B, Hong WK. Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe 2-WSe 2 van der Waals Heterojunction-Based Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:41537-41545. [PMID: 29110451 DOI: 10.1021/acsami.7b11983] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Atomically thin two-dimensional (2D) van der Waals (vdW) heterostructures are one of the very important research issues for stacked optoelectronic device applications. In this study, using the transferred and stacked NbSe2-WSe2 films as electrodes and a channel, we fabricated the field-effect transistor (FET) devices based on 2D-2D vdW metal-semiconductor heterojunctions (HJs) and systematically studied their ultraviolet (UV) wavelength-dependent electrical and photoresponse properties. Upon the exposure to UV light with a wavelength of 365 nm, the NbSe2-WSe2 vdW HJFET devices exhibited threshold voltage shift toward positive gate bias direction, a current increase, and a nonlinear photocurrent increase upon applying a gate bias due to the contribution of the photogenerated hole current. In contrast, for the 254 nm UV-irradiated FET devices, the drain current was decreased dramatically and the threshold voltage was negatively shifted. The time-resolved photoresponse properties showed that the device current after turning off the 254 nm UV light was completely and much more rapidly recovered compared with the case of the persistent photocurrent after turning off the 365 nm UV light. Interestingly, we found that the wettability of the WSe2 surface was changed with increasing irradiation time only after 254 nm UV irradiation. The measured wetting behavior on the WSe2 surface provided direct evidence that the experimentally observed UV-wavelength-dependent phenomena was attributed to the UV-induced dissociative adsorption of oxygen and water molecules, leading to the modulation of charge trap states on the photogenerated and intrinsic carriers in the p-type WSe2 channel. This study will help provide an understanding of the influence of environmental and electrical measurement conditions on the electrical and optical properties of 2D-2D vdW HJ devices for a variety of device applications through the stacking of 2D heterostructures.
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Affiliation(s)
- Seung Bae Son
- Jeonju Center, Korea Basic Science Institute , Jeonju 54907, Jeollabuk-do, Republic of Korea
| | - Yonghun Kim
- Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon 51508, Gyeongnam, Republic of Korea
| | - AhRa Kim
- Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon 51508, Gyeongnam, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University , Seowon-gu, Cheongju 28644, Chungbuk, Republic of Korea
| | - Woong-Ki Hong
- Jeonju Center, Korea Basic Science Institute , Jeonju 54907, Jeollabuk-do, Republic of Korea
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Ho CH, Chen WH, Tiong KK, Lee KY, Gloter A, Zobelli A, Stephan O, Tizei LHG. Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe 2. ACS NANO 2017; 11:11162-11168. [PMID: 29088529 DOI: 10.1021/acsnano.7b05426] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here, we analyze the effect of Cr doping on WSe2 crystals. The topology and the chemistry of the doped samples have been investigated by atom-resolved scanning transmission electron microscopy combined with electron energy loss spectroscopy. Cr (measured to have formal valence 3+) occupies W sites (formal valence 4+), indicating a possible hole doping. However, single or double Se vacancies cluster near Cr atoms, leading to an effective electron doping. These defects organization can be explained by the strong binding energy of the CrW-Vse complex obtained by density functional theory calculations. In highly Cr-doped samples, a local phase transition from the 2H to the to 1T phase is observed, which has been previously reported for other electron-doped transition-metal dichalcogenides. Cr-doped crystals suffer a compressive strain, resulting in an isotropic lattice contraction and an anisotropic optical bandgap energy shift (25 meV in-plane and 80 meV out-of-plane).
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Affiliation(s)
- Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology , Taipei 106, Taiwan
- Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan
| | - Wei-Hao Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology , Taipei 106, Taiwan
- Department of Electrical Engineering, National Taiwan Ocean University , Keelung 202, Taiwan
| | - Kwong K Tiong
- Department of Electrical Engineering, National Taiwan Ocean University , Keelung 202, Taiwan
| | - Kuei-Yi Lee
- Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan
| | - Alexandre Gloter
- Laboratoire de Physique des Solides, University of Paris-Sud, CNRS UMR 8502 , F-91405 Orsay, France
| | - Alberto Zobelli
- Laboratoire de Physique des Solides, University of Paris-Sud, CNRS UMR 8502 , F-91405 Orsay, France
| | - Odile Stephan
- Laboratoire de Physique des Solides, University of Paris-Sud, CNRS UMR 8502 , F-91405 Orsay, France
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Kwon H, Lee K, Heo J, Oh Y, Lee H, Appalakondaiah S, Ko W, Kim HW, Jung JW, Suh H, Min H, Jeon I, Hwang E, Hwang S. Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1702931. [PMID: 28922484 DOI: 10.1002/adma.201702931] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2017] [Revised: 07/29/2017] [Indexed: 06/07/2023]
Abstract
Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high-quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition-metal dichalcogenides semiconductor-metal layers and suggest a new device scheme utilizing the low-resistance edge contact.
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Affiliation(s)
- Hyeokshin Kwon
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Kiyoung Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Jinseong Heo
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Youngtek Oh
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Hyangsook Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Samudrala Appalakondaiah
- SKKU Advanced Institute of Nanotechnology and Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Wonhee Ko
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Hyo Won Kim
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Jin-Wook Jung
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Hwansoo Suh
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Hongki Min
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Insu Jeon
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology and Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sungwoo Hwang
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea
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Kim Y, Kim AR, Zhao G, Choi SY, Kang SC, Lim SK, Lee KE, Park J, Lee BH, Hahm MG, Kim DH, Yun J, Lee KH, Cho B. Wafer-Scale Integration of Highly Uniform and Scalable MoS 2 Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37146-37153. [PMID: 28976735 DOI: 10.1021/acsami.7b10676] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability and intrinsic high mobility. However, to realize viable technologies based on two-dimensional materials, techniques that enable their large-area growth with high quality and uniformity on wafer cale is a prerequisite. Here, we provide a route toward highly uniform growth of a wafer-scale, four-layered MoS2 film on a 2 in. substrate via a sequential process consisting of the deposition of a molybdenum trioxide precursor film by sputtering followed by postsulfurization using a chemical vapor deposition process. Spatial spectroscopic analyses by Raman and PL mapping validated that the as-synthesized MoS2 thin films exhibit high uniformity on a 2 in. sapphire substrate. The highly uniform MoS2 layers allow a successful integration of devices based on ∼1200 MoS2 transistor arrays with a yield of 95% because of their extreme homogeneity on Si wafers. Moreover, a pulse electrical measurement technique enabled investigation of the inherent physical properties of the atomically thin MoS2 layers by minimizing the charge-trapping effect. Such a facile synthesis method can be possibly applied to other 2D transition metal dichalcogenides to ultimately realize the chip integration of device architectures with all 2D-layered building blocks.
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Affiliation(s)
| | | | | | | | - Soo Cheol Kang
- School of Materials Science and Engineering, Gwanju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | - Sung Kwan Lim
- School of Materials Science and Engineering, Gwanju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | | | - Jucheol Park
- Structure Analysis Group, Gyeongbuk Science and Technology Promotion Center, Future Strategy Research Institute , 17 Cheomdangieop 1-ro, Sangdong-myeon Gumi, Gyeongbuk 39171, Republic of Korea
| | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwanju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University , 100 Inharo, Nam-Gu, Incheon 22212, Republic of Korea
| | | | | | | | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University , 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
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Wang F, Wang Z, Jiang C, Yin L, Cheng R, Zhan X, Xu K, Wang F, Zhang Y, He J. Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1604298. [PMID: 28594452 DOI: 10.1002/smll.201604298] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Revised: 02/13/2017] [Indexed: 06/07/2023]
Abstract
2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future.
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Affiliation(s)
- Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Chao Jiang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory for Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Kai Xu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengmei Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Zhang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
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High-quality monolayer superconductor NbSe 2 grown by chemical vapour deposition. Nat Commun 2017; 8:394. [PMID: 28855521 PMCID: PMC5577275 DOI: 10.1038/s41467-017-00427-5] [Citation(s) in RCA: 131] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2016] [Accepted: 06/28/2017] [Indexed: 11/09/2022] Open
Abstract
The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer. Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.
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41
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Choi SY, Kim Y, Chung HS, Kim AR, Kwon JD, Park J, Kim YL, Kwon SH, Hahm MG, Cho B. Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe 2. ACS APPLIED MATERIALS & INTERFACES 2017; 9:3817-3823. [PMID: 28058836 DOI: 10.1021/acsami.6b14551] [Citation(s) in RCA: 55] [Impact Index Per Article: 7.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Here, we report that Nb doping of two-dimensional (2D) MoSe2 layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, Nb atoms were incorporated into a 2D MoSe2 host matrix, and the Nb doping concentration could be precisely controlled by varying the number of Nb2O5 deposition cycles in the plasma enhanced atomic layer deposition process. At relatively low Nb dopant concentrations, MoSe2 showed enhanced device durability as well as NO2 gas response, attributed to its small grains and stabilized grain boundaries. Meanwhile, an increase in the Nb doping concentration deteriorated the NO2 gas response. This might be attributed to a considerable increase in the number of metallic NbSe2 regions, which do not respond to gas molecules. This novel method of doping 2D transition metal dichalcogenide-based nanomaterials with metal atoms is a promising approach to improve the performance such as stability and gas response of 2D gas sensors.
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Affiliation(s)
- Sun Young Choi
- Department of advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea
- School of Materials Science and Engineering, Pusan National University , 30 Jangjeon-Dong Geumjeong-Gu, Busan 46241, Republic of Korea
| | - Yonghun Kim
- Department of advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute , Jeonju, Jeollabuk-do, 54907, Republic of Korea
| | - Ah Ra Kim
- Department of advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea
| | - Jung-Dae Kwon
- Department of advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea
| | - Jucheol Park
- Materials Characterization Center, Testing & Certification Division, Gumi Electronics & Information Technology Research Institute , Cheomdangieop 1-ro 17, Sangdong-myeon, Gumi, Gyeongbuk 39171, Republic of Korea
| | - Young Lae Kim
- Department of Mechanical and Industrial Engineering, Northeastern University , Boston, Massachusetts 02115, United States
| | - Se-Hun Kwon
- School of Materials Science and Engineering, Pusan National University , 30 Jangjeon-Dong Geumjeong-Gu, Busan 46241, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University , 100 Inharo, Nam-Gu, Incheon 22212, Republic of Korea
| | - Byungjin Cho
- Department of advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea
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Yang Z, Pan J, Liu Q, Wu N, Hu M, Ouyang F. Electronic structures and transport properties of a MoS2–NbS2 nanoribbon lateral heterostructure. Phys Chem Chem Phys 2017; 19:1303-1310. [DOI: 10.1039/c6cp07327a] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
A theoretical study on a transition metal dichalcogenide one-dimensional nanoribbon lateral heterostructure for nanoelectronics with low energy consumption.
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Affiliation(s)
- Zhixiong Yang
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy
- Central South University
- Changsha 410083
- People's Republic of China
| | - Jiangling Pan
- School of Physics and Electronics
- and Institute of Super-microstructure and Ultrafast Processing Advanced Materials
- Central South University
- Changsha 410083
- People's Republic of China
| | - Qi Liu
- School of Physics and Electronics
- and Institute of Super-microstructure and Ultrafast Processing Advanced Materials
- Central South University
- Changsha 410083
- People's Republic of China
| | - Nannan Wu
- School of Physics and Electronics
- and Institute of Super-microstructure and Ultrafast Processing Advanced Materials
- Central South University
- Changsha 410083
- People's Republic of China
| | - Mengli Hu
- School of Physics and Electronics
- and Institute of Super-microstructure and Ultrafast Processing Advanced Materials
- Central South University
- Changsha 410083
- People's Republic of China
| | - Fangping Ouyang
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy
- Central South University
- Changsha 410083
- People's Republic of China
- School of Physics and Electronics
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Huang F, Cho B, Chung HS, Son SB, Kim JH, Bae TS, Yun HJ, Sohn JI, Oh KH, Hahm MG, Park JH, Hong WK. The influence of interfacial tensile strain on the charge transport characteristics of MoS 2-based vertical heterojunction devices. NANOSCALE 2016; 8:17598-17607. [PMID: 27714106 DOI: 10.1039/c6nr05937f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate the charge transport characteristics of MoS2-based vertical heterojunction devices through the formation of interfacial strain. Atomically thin MoS2 bilayers were directly synthesized on a p-type Si substrate by using chemical vapor deposition to introduce an interfacial tensile strain in the vertical heterojunction diode structure, which was confirmed by Raman, X-ray and ultraviolet photoelectron spectroscopy techniques. The electrical and optoelectronic properties of the heterojunction devices with the as-grown MoS2 (A-MoS2) on p-Si were compared with those of transferred MoS2 (T-MoS2)/p-Si devices. To clearly understand the charge transport characteristics induced by the interfacial tensile strain, the Fowler-Nordheim (FN) analysis of the electrical properties of the diode devices was conducted with the corresponding energy band diagrams. All of the fabricated MoS2-based vertical diodes exhibited clearly rectifying behaviors, but the photoresponse properties of the A-MoS2-based and T-MoS2-based heterojunctions exhibited distinct differences. Interestingly, we found that the tunneling barrier heights of the A-MoS2-based heterojunction devices were relatively higher than those of the T-MoS2-based devices and were almost the same before and after illumination due to the interfacial tensile strain, whereas those of the T-MoS2-based devices were lowered after illumination. Our study will help further understand the charge transport properties of 2D material-based heterojunction devices in the presence of interfacial strain, ultimately enabling the design of electronic and optoelectronic devices with novel functionalities.
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Affiliation(s)
- Fu Huang
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. and Division of Biotechnology, Advanced Institute of Environment and Bioscience, College of Environmental and Bioscience Sciences, Chonbuk National University, Iksan 54596, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science, Changwon, Gyeongnam 51508, Republic of Korea
| | - Hee-Suk Chung
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea.
| | - Seung Bae Son
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea.
| | - Jung Han Kim
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. and Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Tae-Sung Bae
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea.
| | - Hyung Joong Yun
- Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK
| | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Myung Gwan Hahm
- School of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Jung Hee Park
- Division of Biotechnology, Advanced Institute of Environment and Bioscience, College of Environmental and Bioscience Sciences, Chonbuk National University, Iksan 54596, Republic of Korea
| | - Woong-Ki Hong
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea.
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Kim Y, Kim AR, Yang JH, Chang KE, Kwon JD, Choi SY, Park J, Lee KE, Kim DH, Choi SM, Lee KH, Lee BH, Hahm MG, Cho B. Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering. NANO LETTERS 2016; 16:5928-5933. [PMID: 27552187 DOI: 10.1021/acs.nanolett.6b02893] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The long-term stability and superior device reliability through the use of delicately designed metal contacts with two-dimensional (2D) atomic-scale semiconductors are considered one of the critical issues related to practical 2D-based electronic components. Here, we investigate the origin of the improved contact properties of alloyed 2D metal-semiconductor heterojunctions. 2D WSe2-based transistors with mixed transition layers containing van der Waals (M-vdW, NbSe2/WxNb1-xSe2/WSe2) junctions realize atomically sharp interfaces, exhibiting long hot-carrier lifetimes of approximately 75,296 s (78 times longer than that of metal-semiconductor, Pd/WSe2 junctions). Such dramatic lifetime enhancement in M-vdW-junctioned devices is attributed to the synergistic effects arising from the significant reduction in the number of defects and the Schottky barrier lowering at the interface. Formation of a controllable mixed-composition alloyed layer on the 2D active channel would be a breakthrough approach to maximize the electrical reliability of 2D nanomaterial-based electronic applications.
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Affiliation(s)
| | | | - Jin Ho Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | - Kyoung Eun Chang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | | | | | - Jucheol Park
- Structure Analysis Group, Gyeongbuk Science and Technology Promotion Center, Future Strategy Research Institute , 17 Cheomdangieop 1-ro, Sangdong-myeon, Gumi, Gyeongbuk 39171, Republic of Korea
| | | | | | | | | | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University , 100 Inharo, Nam-Gu, Incheon 22212, Republic of Korea
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