Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Colloidal stabilization of hydrophobic InSe 2D nanosheets in a model environmental aqueous solution and their impact on Shewanella oneidensis MR-1

Semiconductor InSe 2D nanomaterials have emerged as potential photoresponsive materials for broadly distributed photodetectors and wearable electronics technologies due to their high photoresponsivity and thermal stability. This paper addresses an environmental concern about the fate of InSe 2D nanosheets when disposed and released into the environment after use. Semiconducting materials are potentially reactive and often form environmentally damaging species, for example reactive oxygen and nitrogen species, when degraded. InSe nanosheets are prepared using a semi bottom-up approach which involves a reaction between indium and selenium precursors at elevated temperature in an oxygen-free environment to prevent oxidation. InSe nanosheets are formed as a stable intermediate with micrometer-sized lateral dimensions and a few monolayer thickness. The InSe 2D nanosheets are obtained when the reaction is stopped after 30 minutes by cooling. Keeping the reaction at elevated temperature for a longer period, for example 60 minutes leads to the formation of InSe 3D nanoparticles of about 5 nm in diameter, a thermodynamically more stable form of InSe. The paper focuses on the colloidal stabilization of InSe nanosheets in an aqueous solution that contains epigallocatechin gallate (EGCG), a natural organic matter (NOM) simulant. We show that EGCG coats the surface of the hydrophobic, water-insoluble InSe nanosheets via physisorption. The formed EGCG-coated InSe nanosheets are colloidally stable in aqueous solution. While unmodified semiconducting InSe nanosheets could produce reactive oxygen species (ROS) when illuminated, our study shows low levels of ROS generation by EGCG-coated InSe nanosheets under ambient light, which might be attributed to ROS quenching by EGCG. Growth-based viability (GBV) assays show that the colloidally stable EGCG-coated InSe nanosheets adversely impact the bacterial growth of Shewanella oneidensis MR-1, an environmentally relevant Gram-negative bacterium in aqueous media. The impact on bacterial growth is driven by the EGCG coating of the nanosheets. In addition, live/dead assays show insignificant membrane damage of the Shewanella oneidensis MR-1 cells by InSe nanosheets, suggesting a weak association of EGCG-coated nanosheets with the cells. It is likely that the adverse impact of EGCG-coated nanosheets on bacterial growth is the result of increasing local concentration of EGCG either when adsorbed on the nanosheets when the nanosheets interact with the cells, or when desorbed from the EGCG-coated nanosheets to interact with the bacterial cells.

Enhanced HER Efficiency of Monolayer MoS2 via S Vacancies and Nano-Cones Array Induced Strain Engineering

Molybdenum disulfide (MoS2 ) has gained significant attention as a promising catalyst for hydrogen evolution reaction (HER). The catalytic performance of MoS2 can be enhanced by either altering its structure or regulating external conditions. In this study, a novel approach combining the introduction of sulfur vacancy (VS ) and biaxial tensile strain to create more active sites and modulate the band structure of monolayer MoS2 is proposed. To achieve the desired strain level, nano-cones (NCs) array substrates facilely fabricated by dip-pen nanolithography (DPN) are employed. The magnitude of the applied tensile strain can be finely tuned via adjusting the height of the NCs. Furthermore, on-chip electrochemical devices are constructed based on artificial structures, enabling precise optimization of HER performance of MoS2 through the synergistic effect of VS and strain. Combined with the d-band theory, it reveals that the HER properties of VS -MoS2 are highly dependent on the degree of tensile strain. This study presents a promising avenue for the design and preparation of high-performance 2D catalysts for energy conversion and storage applications.

Giant Out-of-Plane Exciton Emission Enhancement in Two-Dimensional Indium Selenide via a Plasmonic Nanocavity

Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are attractive candidates for novel photonic applications, such as radially polarized sources, integrated photonic chips, and quantum communications. However, their low quantum efficiency resulting from forbidden transitions limits their practicality. In this work, we achieve a giant enhancement of up to 34000 for OP exciton emission in indium selenide (InSe) via a designed Ag nanocube-over-Au film plasmonic nanocavity. The large photoluminescence enhancement factor (PLEF) is attributed to the induced OP local electric field (E_z) within the nanocavity, which facilitates effective OP exciton-plasmon interaction and subsequent tremendous enhancement. Moreover, the nanoantenna effect resulting from the effective interaction improves the directivity of spontaneous radiation. Our results not only reveal an effective photoluminescence enhancement approach for OP excitons but also present an avenue for designing on-chip photonic devices with an OP dipole orientation.

Probing Anisotropic Deformation and Near-Infrared Emission Tuning in Thin-Layered InSe Crystal under High Pressure

Indium selenide (InSe) exhibits high lattice compressibility and an extraordinary capability of tailoring the optical band gap under pressure beyond other 2D materials. Herein, by applying hydrostatic pressure via a diamond anvil cell, we revealed an anisotropic deformation dynamic and efficient manipulation of near-infrared light emission in thin-layered InSe strongly correlated to layer numbers (N = 5-30). As N > 20, the InSe lattice is compressed in all directions, and the intralayer compression leads to widening of the band gap, resulting in an emission blue shift (∼120 meV at 1.5 GPa). In contrast, as N ≤ 15, an efficient emission red shift is observed from band gap shrinkage (rate of 100 meV GPa^-1), which is attributed to the predominant uniaxial interlayer compression because of the high strain resistance along the InSe-diamond interface. These findings advance the understanding of pressure-induced lattice deformation and optical transition evolution in InSe and could be applied to other 2D materials.

Revealing the origin of PL evolution of InSe flake induced by laser irradiation

Two-dimensional InSe has been considered as a promising candidate for novel optoelectronic devices owing to large electron mobility and a near-infrared optical band gap. However, its widespread applications suffer from environmental instability. A lot of theoretical studies on the degradation mechanism of InSe have been reported whereas the experimental proofs are few. Meanwhile, the role of the extrinsic environment is still obscure during the degradation. As a common technique of studying the degradation mechanism of 2D materials, laser irradiation exhibits many unique advantages, such as being fast, convenient, and offering in situ compatibility. Here, we have developed a laser-treated method, which involves performing repeated measurements at the same point while monitoring the evolution of the resulting PL, to systematically study the photo-induced degradation process of InSe. Interestingly, we observe different evolution behavior of PL intensity under weak irradiation and strong irradiation. Our experimental results indicate the vacancy passivation and degrading effect simultaneously occurring in InSe under a weak laser irradiation, resulting in the PL increasing first and then decreasing during the measurement. Meanwhile we also notice that the passivation has a stronger effect on the PL than the degrading effect of weak oxidation. In contrast, under a strong laser irradiation, the InSe suffers serious destruction caused by excess heating and intense oxidation. This leads to a direct decrease of PL and corresponding oxidative products. Our work provides a reliable experimental supplement to the photo oxidation study of InSe and opens up a new avenue to regulate the PL of InSe.

Flat-Band-Induced Many-Body Interactions and Exciton Complexes in a Layered Semiconductor

Interactions among a collection of particles generate many-body effects in solids that result in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range makes two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a new platform for this purpose because of its excellent optical properties and the flat valence band dispersion. In this work, we present a complete study of charge-tunable excitons in few-layer InSe by photoluminescence spectroscopy. From the optical spectra, we establish that free excitons in InSe are more likely to be captured by ionized donors leading to the formation of bound exciton complexes. Surprisingly, a pronounced red shift of the exciton energy accompanied by a decrease of the exciton binding energy upon hole-doping reveals a significant band gap renormalization induced by the presence of the Fermi reservoir.

Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector

van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS₂ van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS₂/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.

Tunable Schottky barrier in Janus-XGa2Y/Graphene (X/Y = S, Se, Te;X≠Y) van der Waals heterostructures

Two-dimensional (2D) Janus materials have attracted significant attention due to their asymmetrical structures and unique electronic properties. In this work, by using the first-principles calculation based on density functional theory, we systematically investigate the electronic properties of 6 types of Janus-XGa₂Y/Graphene van der Waals heterostructures (vdWHs). The results show that the Janus-XGa₂Y/Graphene vdWHs are connected by weak interlayer vdW forces and can form n-type Schottky contact, p-type Schottky contact or Ohmic contact when the spin-orbit coupling (SOC) is not considered. However, when considering SOC, only the SeGa2S/G and G/SeGa2S vdWHs show n-type Schottky contact, and other vdWHs show Ohmic contacts. In addition, the Schottky barriers and contact types of SeGa₂S/Graphene and Graphene/SeGa₂S vdWHs can be effectively modulated by interlayer distance and biaxial strain. They can be transformed from intrinsic n-type Schottky contact to p-type Schottky contact when the interlayer distances are smaller than 2.65 Å and 2.90 Å, respectively. They can also be transformed to Ohmic contact by applying external biaxial strain. Our work can provide useful guidelines for designing Schottky nanodiodes, field effect transistors or other low-resistance nanodevices based on the 2D vdWHs.

Engineering the Dipole Orientation and Symmetry Breaking with Mixed-Dimensional Heterostructures

Engineering of the dipole and the symmetry of materials plays an important role in fundamental research and technical applications. Here, a novel morphological manipulation strategy to engineer the dipole orientation and symmetry of 2D layered materials by integrating them with 1D nanowires (NWs) is reported. This 2D InSe -1D AlGaAs NW heterostructure example shows that the in-plane dipole moments in InSe can be engineered in the mixed-dimensional heterostructure to significantly enhance linear and nonlinear optical responses (e.g., photoluminescence, Raman, and second harmonic generation) with an enhancement factor of up to ≈12. Further, the 1D NW can break the threefold rotational symmetry of 2D InSe, leading to a strong optical anisotropy of up to ≈65%. These results of engineering dipole orientation and symmetry breaking with the mixed-dimensional heterostructures open a new path for photonic and optoelectronic applications.

van der Waals Semiconductor Empowered Vertical Color Sensor

Biomimetic artificial vision is receiving significant attention nowadays, particularly for the development of neuromorphic electronic devices, artificial intelligence, and microrobotics. Nevertheless, color recognition, the most critical vision function, is missed in the current research due to the difficulty of downscaling of the prevailing color sensing devices. Conventional color sensors typically adopt a lateral color sensing channel layout and consume a large amount of physical space, whereas compact designs suffer from an unsatisfactory color detection accuracy. In this work, we report a van der Waals semiconductor-empowered vertical color sensing structure with the emphasis on compact device profile and precise color recognition capability. More attractive, we endow color sensor hardware with the function of chromatic aberration correction, which can simplify the design of an optical lens system and, in turn, further downscales the artificial vision systems. Also, the dimension of a multiple pixel prototype device in our study confirms the scalability and practical potentials of our developed device architecture toward the above applications.

Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing

γ-indium selenide (InSe) is a van der Waals semiconductor and holds great potentials for low-energy-consumption electronic and optoelectronic devices. Herein, we investigated the hydrostatic pressure engineered near-infrared (NIR) light emission of mechanically exfoliated γ-InSe crystals using the diamond anvil cell (DAC) technique. A record-wide spectral tuning range of 185 nm and a large linear pressure coefficient of 40 nm GPa^-1 were achieved for spontaneous emissions, leading to ultrabroadband microlasing spectrally ranging from 1022 to 911 nm. This high emission tunability can be attributed to the compression of the soft intralayer In-Se bonds under high pressure, which suppressed the band gap shrinkage by increasing the interlayer interaction. Furthermore, two band gap crossovers of valence (direct-to-indirect) and conduction bands were resolved at approximately 4.0 and 7.0 GPa, respectively, resulting in pressure-sensitive emission lifetime and intensity. These findings pave the pathways for pressure-sensitive InSe-based NIR light sources, sensors and so on.

Layer Number-Dependent Raman Spectra of γ-InSe

The two-dimensional layered semiconductor InSe, with its high carrier mobility, chemical stability, and strong charge transfer ability, plays a crucial role in optoelectronic devices. The number of InSe layers (L) has an important influence on its band structure and optoelectronic properties. Herein we present systematic investigations on few-layer (1L-7L) γ-InSe by optical contrast and Raman spectroscopy. We propose three quantified formulas to quickly identify the layer number using optical contrast, the frequency difference of two A₁ modes, and ultralow-frequency Raman spectroscopy, respectively. Moreover, angle-resolved polarization Raman spectra show that γ-InSe is isotropic in the a-b plane. Furthermore, using Raman mapping, we find that the relative strength of the low-frequency interlayer shear modes is particularly sensitive to the interaction between the sample and the substrate.

Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe

As a narrow-gap semiconductor, III-VI two-dimensional (2D) van der Waals layered indium selenide (InSe) has attracted a lot of attention due to excellent physical properties. For potential optoelectronic applications, the tunability of the optical property is challenging, e.g., the modulation of optical bandgap commonly by element doping. However, the deep understanding of the influence of element doping on the microstructure and the optical properties lacks of systematic investigation. In this work, by using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, we investigate the influence of Bi doping on controlling of the microstructure and optical properties of InSe single crystal in detail. The results show that Bi doping can introduce additional stacking faults in InSe single crystal, and more importantly, the atomic spacing and lattice constant of Bi-doped InSe are changed a lot as compared to that of the undoped one. Further optical characterizations including photoluminescence and transmission spectra reveal that Bi-doping can broaden the transmission wavelength range of InSe and make its optical bandgap blue-shift, which can also be physically interpreted from the doping-induced structure change. Our work expands new ideas for the optical property modulation of 2D thin-layer materials and brings new possibilities for the development of thin-layer InSe optical devices.

Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake

The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton-exciton scattering with a high net modal optical gain of ∼1029 cm^-1. Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.

Single-molecule photocatalytic dynamics at individual defects in two-dimensional layered materials

The insightful comprehension of in situ catalytic dynamics at individual structural defects of two-dimensional (2D) layered material, which is crucial for the design of high-performance catalysts via defect engineering, is still missing. Here, we resolved single-molecule trajectories resulted from photocatalytic activities at individual structural features (i.e., basal plane, edge, wrinkle, and vacancy) in 2D layered indium selenide (InSe) in situ to quantitatively reveal heterogeneous photocatalytic dynamics and surface diffusion behaviors. The highest catalytic activity was found at vacancy in a four-layer InSe, up to ~30× higher than that on the basal plane. Moreover, lower adsorption strength of reactant and slower dissociation/diffusion rates of product were found at more photocatalytic active defects. These distinct dynamic properties are determined by lattice structures/electronic energy levels of defects and layer thickness of supported InSe. Our findings shed light on the fundamental understanding of photocatalysis at defects and guide the rational defect engineering.

Oblique and Asymmetric Klein Tunneling across Smooth NP Junctions or NPN Junctions in 8-Pmmn Borophene

The tunneling of electrons and holes in quantum structures plays a crucial role in studying the transport properties of materials and the related devices. 8-Pmmn borophene is a new two-dimensional Dirac material that hosts tilted Dirac cone and chiral, anisotropic massless Dirac fermions. We adopt the transfer matrix method to investigate the Klein tunneling of massless fermions across the smooth NP junctions and NPN junctions of 8-Pmmn borophene. Like the sharp NP junctions of 8-Pmmn borophene, the tilted Dirac cones induce the oblique Klein tunneling. The angle of perfect transmission to the normal incidence is 20.4∘, a constant determined by the Hamiltonian of 8-Pmmn borophene. For the NPN junction, there are branches of the Klein tunneling in the phase diagram. We find that the asymmetric Klein tunneling is induced by the chirality and anisotropy of the carriers. Furthermore, we show the oscillation of electrical resistance related to the Klein tunneling in the NPN junctions. One may analyze the pattern of electrical resistance and verify the existence of asymmetric Klein tunneling experimentally.

Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain

The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The bandgap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ≈200 meV %-1. The effect of biaxial strain on the electrical properties of the InSe devices is further characterized. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ≈450-1000, ≈5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe bandgap also translates in a strain-induced redshift of the spectral response of the InSe photodetectors with ΔE cut-off ≈173 meV at a rate of ≈360 meV %-1 of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

Surface-Modified Ultrathin InSe Nanosheets with Enhanced Stability and Photoluminescence for High-Performance Optoelectronics

Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to ∼160 μm and ∼70%, respectively, and ∼80% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm² V^-1 s^-1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 μm were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.

Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Understanding how temperature affects the structural and electronic properties for two-dimensional (2D) semiconductors could promote the application and development of nanoelectronic devices. Here, the temperature dependence of lattice structure for indium selenide (InSe) nanosheets and the corresponding electronic properties of 3 nm indium-deposited InSe field-effect transistors (FETs) are systematically demonstrated. Analyses of Raman spectra suggest that the difference of phonon frequency (Δω) for the A[Formula: see text] mode is found to be 3.14 cm^-1, which is larger than that of the E[Formula: see text] mode due to the stronger electron-phonon coupling for the A[Formula: see text] mode. The device performance based on indium-deposited InSe is systematically explained using Kelvin probe force microscopy (KPFM) and the predicted energy band structure. Furthermore, FETs based on temperature and variable thickness InSe flakes are designed as applicable devices. Our findings are of fundamental importance to explain the underlying physics in intrinsic InSe transistors and improve further applications.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties

The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.

Two-Dimensional Indium Selenide for Sulphur Vapour Sensing Applications

Surface-to-volume ratio in two-dimensional (2D) materials highlights among their characteristics as an inherent and intrinsic advantage taking into account their strong sensitivity to surface effects. For this reason, we have proposed in this work micromechanically exfoliated 2D nanosheets of InSe as an optical vapour sensor. As a proof of concept, we used 2-mercaptoethanol as the chemical analyte in vapour phase to monitor the change of the InSe photoluminescence (PL) before and after exposure to the analyte. For short vapour exposure times (at low analyte concentration), we found a PL enhancement of InSe nanosheets attributed to the surface localization of Se defects. For long vapour exposure times (or higher concentrations) a PL reduction is observed, probably due to the diffusion of molecules within the nanosheet. These results confirm the capability of 2D InSe as a photoluminescent sensor of vapours, because of its sensitivity to surface passivation or volume diffusion of molecules.

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe

The emergence of the hydrogen economy requires development in the storage, generation and sensing of hydrogen. The indium selenide ( γ -InSe) van der Waals (vdW) crystal shows promise for technologies in all three of these areas. For these applications to be realised, the fundamental interactions of InSe with hydrogen must be understood. Here, we present a comprehensive experimental and theoretical study on the interaction of γ -InSe with hydrogen. It is shown that hydrogenation of γ -InSe by a Kaufman ion source results in a marked quenching of the room temperature photoluminescence signal and a modification of the vibrational modes of γ -InSe, which are modelled by density functional theory simulations. Our experimental and theoretical studies indicate that hydrogen is incorporated into the crystal preferentially in its atomic form. This behaviour is qualitatively different from that observed in other vdW crystals, such as transition metal dichalcogenides, where molecular hydrogen is intercalated in the vdW gaps of the crystal, leading to the formation of "bubbles" for hydrogen storage.

Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe-Organic van der Waals Heterostructures

Layered indium selenide (InSe) is an emerging two-dimensional semiconductor that has shown significant promise for high-performance transistors and photodetectors. The range of optoelectronic applications for InSe can potentially be broadened by forming mixed-dimensional van der Waals heterostructures with zero-dimensional molecular systems that are widely employed in organic electronics and photovoltaics. Here, we report the spatially resolved investigation of photoinduced charge separation between InSe and two molecules (C₇₀ and C₈-BTBT) using scanning tunneling microscopy combined with laser illumination. We experimentally and computationally show that InSe forms type-II and type-I heterojunctions with C₇₀ and C₈-BTBT, respectively, due to an interplay of charge transfer and dielectric screening at the interface. Laser-excited scanning tunneling spectroscopy reveals a ∼0.25 eV decrease in the energy of the lowest unoccupied molecular orbital of C₇₀ with optical illumination. Furthermore, photoluminescence spectroscopy and Kelvin probe force microscopy indicate that electron transfer from InSe to C₇₀ in the type-II heterojunction induces a photovoltage that quantitatively matches the observed downshift in the tunneling spectra. In contrast, no significant changes are observed upon optical illumination in the type-I heterojunction formed between InSe and C₈-BTBT. Density functional theory calculations further show that, despite the weak coupling between the molecular species and InSe, the band alignment of these mixed-dimensional heterostructures strongly differs from the one suggested by the ionization potential and electronic affinities of the isolated components. Self-energy-corrected density functional theory indicates that these effects are the result of the combination of charge redistribution at the interface and heterogeneous dielectric screening of the electron-electron interactions in the heterostructure. In addition to providing specific insight for mixed-dimensional InSe-organic van der Waals heterostructures, this work establishes a general experimental methodology for studying localized charge transfer at the molecular scale that is applicable to other photoactive nanoscale systems.

Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles

In this work, we propose using periodic Au nanoparticles (NPs) in indium selenide-based optoelectronic devices to tune the optical absorption of indium selenide. Electromagnetic simulations show that optical absorption of indium selenide can be manipulated by tuning plasmonic resonance. The effect on the plasmonic resonance of the size, period of NPs, the thickness of silicon oxide, and the insulator spacer is systematically analyzed. A high absorption enhancement over the visible spectrum is achieved through systematic optimization of nanostructures.

Broadband Nonlinear Optical Response of InSe Nanosheets for the Pulse Generation From 1 to 2 μm

Few-layered InSe nanosheets were fabricated by the simple liquid-phase exfoliation method. The morphology and crystal structure features of InSe nanosheet sample were characterized comprehensively. The photoluminescence (PL) spectrum indicated that the liquid-phase exfoliated InSe nanosheets contained variously layered nanoflakes, where eight layers nanosheets dominate. In addition, the first-principle simulation was carried out to describe the electron density of states (DOS) and the electronic band structures. Moreover, the few-layered InSe nanosheets performed excellent nonlinear absorption properties in a broad spectral band. As an application, the stable passively Q-switched (PQS) lasers with few-layered InSe nanosheets saturable absorbers (SAs) were realized with the operating wavelengths at 1.06, 1.34, and 1.91 μm. The shortest pulse durations were 599, 520, and 210 ns, respectively. Our results confirmed that the few-layered InSe nanosheets could be an excellent candidate for pulsed lasers in wide spectral bands.

Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe

We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping (∼10^{13}  cm^{-2}) due to hexagonal warping of the Fermi surface. While the system remains dynamically stable, its electron-phonon spectral function exhibits sharp low-energy resonances, leading to the formation of satellite quasiparticle states near the Fermi energy. Such many-body renormalization is predicted to have two important consequences. First, it significantly suppresses charge carrier mobility reaching ∼1  cm^{2} V^{-1} s^{-1} at 100 K in a freestanding sample. Second, it gives rise to unusual temperature-dependent optical excitations in the midinfrared region. Relatively small charge carrier concentrations and realistic temperatures suggest that these excitations may be observed experimentally.

Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Strain Effect on Thermoelectric Performance of InSe Monolayer

Strain engineering is a practical method to tune and improve the physical characteristics and properties of two-dimensional materials, due to their large stretchability. Tensile strain dependence of electronic, phonon, and thermoelectric properties of InSe monolayer are systematically studied. We demonstrate that the lattice thermal conductivity can be effectively modulated by applying tensile strain. Tensile strain can enhance anharmonic phonon scattering, giving rise to the enhanced phonon scattering rate, reduced phonon group velocity and heat capacity, and therefore lattice thermal conductivity decreases from 25.9 to 13.1 W/mK when the strain of 6% is applied. The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.

Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitters on a Three-Dimensional Substrate

Atomically thin membranes of two-dimensional (2-D) transition-metal dichalcogenides (TMDCs) have distinct emission properties, which can be utilized for realizing ultrathin optoelectronic integrated systems in the future. Growing a large-area and strain-reduced monolayer 2-D material on a three-dimensional (3-D) substrate with microstructures or nanostructures is a crucial technique because the electronic band structure of TMDC atomic layers is strongly affected by the number of stacked layers and strain. In this study, a large-area and strain-reduced MoS₂ monolayer was fabricated on a 3-D substrate through a two-step growth procedure. The material characteristics and optical properties of monolayer TMDCs fabricated on the nonplanar substrate were examined. The growth of monolayer MoS₂ on a cone-shaped sapphire substrate effectively reduced the tensile strain induced by the substrate by decreasing the thermal expansion mismatch between the 2-D material and the substrate. Monolayer MoS₂ grown on the nonplanar substrate exhibited uniform strain reduction and luminescence intensity. The fabrication of monolayer MoS₂ on a nonplanar substrate increased the light extraction efficiency. In the future, large-area and strain-reduced 2-D TMDC materials grown on a nonplanar substrate can be employed as novel light-emitting devices for applications in lighting, communication, and displays for the development of ultrathin optoelectronic integrated systems.

InSe: a two-dimensional semiconductor with superior flexibility

Two-dimensional indium selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (∼1-2 layers to ∼34 layers) flakes experimentally by using a buckling-based methodology. We find that the Young's modulus has a value of 23.1 ± 5.2 GPa, one of the lowest values reported to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In₂ O₃ in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm² , comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm² V^-1 s^-1 along with an on/off current ratio, of >10⁴ at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct-band-gap semiconductor with high mobility from bulk to atomically thin layers and is drastically different from transition-metal dichalcogenides, in which the direct band gap only exists at the single-layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution, which results in the limited absorption of normally incident light that can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. We observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperatures due to defect states on the ridge, which can be as much as ∼60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light-matter interactions and defect engineering that are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

Recently, two-dimensional (2D) few-layer InSe nanosheets have become one of the most interesting materials due to their excellent electron transport, wide bandgap tunability and good metal contact. However, their low photoluminescence (PL) efficiency and hole mobility seriously restrict their application in 2D InSe-based nano-devices. Here, by exerting a suitable compressive strain, a remarkable modification for the electronic structure and the optical and transport properties of 1- to 5-layer InSe has been confirmed by powerful GW-BSE calculations. Both top valence band inversion and indirect-to-direct bandgap transition are induced; the light polarization is reversed from E||c to E⊥c; and the PL intensity and hole mobility are enhanced greatly. Surprisingly, under 6% compressive strain, the light emission of monolayer InSe with E⊥c is allowed at 2.58 eV, which has never been observed previously. Meanwhile, for the 2D few-layer InSe, the PL with E⊥c polarization increases over 10 times in intensity and has a blue-shift at about 0.6-0.7 eV, and the hole mobility increases two orders of magnitude up to 103 cm2 V-1 s-1, as high as electron mobility. The strained few-layer InSe are thus a promising candidate for future 2D electronic and optoelectronic nano-devices.

Defects and oxidation of group-III monochalcogenide monolayers

Among various two-dimensional (2D) materials, monolayer group-III monochalcogenides (GaS, GaSe, InS, and InSe) stand out owing to their potential applications in microelectronics and optoelectronics. Devices made of these novel 2D materials are sensitive to environmental gases, especially O₂ molecules. To address this critical issue, here we systematically investigate the oxidization behaviors of perfect and defective group-III monochalcogenide monolayers by first-principles calculations. The perfect monolayers show superior oxidation resistance with large barriers of 3.02-3.20 eV for the dissociation and chemisorption of O₂ molecules. In contrast, the defective monolayers with single chalcogen vacancy are vulnerable to O₂, showing small barriers of only 0.26-0.36 eV for the chemisorption of an O₂ molecule. Interestingly, filling an O₂ molecule to the chalcogen vacancy of group-III monochalcogenide monolayers could preserve the electronic band structure of the perfect system-the bandgaps are almost intact and the carrier effective masses are only moderately disturbed. On the other hand, the defective monolayers with single vacancies of group-III atoms carry local magnetic moments of 1-2 μ_B. These results help experimental design and synthesis of group-III monochalcogenides based 2D devices with high performance and stability.

InSe: a two-dimensional material with strong interlayer coupling

Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to the large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of the band gap on layer thickness may lead to novel device applications, although its origin remains poorly understood, and is generally attributed to the quantum confinement effect. In this work, we demonstrate via first-principles calculations that strong interlayer coupling may be mainly responsible for this phenomenon, especially in the fewer-layer region, and it could also be an essential factor influencing other material properties of β-InSe and γ-InSe. The existence of strong interlayer coupling manifests itself in three aspects: (i) indirect-to-direct band gap transitions with increasing layer thickness; (ii) fan-like frequency diagrams of the shear and breathing modes of few-layer flakes; and (iii) strong layer-dependent carrier mobilities. Our results indicate that multiple-layer InSe may be deserving of attention from FET-based technologies and may also be an ideal system to study interlayer coupling, possibly inherent in other 2D materials.

Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

We show that the absorption spectra of single-layer GaSe and GaTe in the hexagonal phase feature exciton peaks with distinct polarization selectivity. We investigate these distinct features from first-principles calculations using the GW-BSE formalism. We show that, because of the symmetry of the bands under in-plane mirror symmetry, the bound exciton states selectively couple to either in-plane or out-of-plane polarization of the light. In particular, for a p-polarized light absorption experiment, the absorption peaks of the hydrogenic s-like excitons emerge at large angle of incidence, while the overall absorbance reduces over the rest of the spectrum.

Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain

Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent band gap, spanning the visible and near infrared regions, and thus recently has been drawing tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structures. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain and observe a salient shift of photoluminescence peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for four- to eight-layer samples, which is much larger than that for the widely studied MoS₂ monolayer. Density functional theory calculations well reproduce the observed layer-dependent band gaps and the strain effect and reveal that the shift rate decreases with the increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile two-dimensional electronic and optoelectronic material, which is suitable for tunable light emitters, photodetectors, and other optoelectronic devices.

Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study

A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.

Oxygen-induced degradation of the electronic properties of thin-layer InSe

The degradation of thin-layer InSe induced by O atoms was quantificationally studied by first-principles calculations and deformation potential theory from the aspects of structural relaxation, band structure, and carrier mobility.

Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe

Monolayer indium selenide (InSe) possesses numerous fascinating properties, such as high electron mobility, quantum Hall effect and anomalous optical response. However, its phonon properties, thermal transport properties and the origin of its structural stability remain unexplored. Using first-principles calculations, we show that the atoms in InSe are highly polarized and such polarization causes strong long-range dipole-dipole interaction (DDI). For acoustic modes, DDI is essential for maintaining its structural stability. For optical modes, DDI causes a significant frequency shift of its out-of-phase vibrations. Surprisingly, we observed that there were two isolated frequency regimes, which were completely separated from other frequency regimes with large frequency gaps. Within each frequency regime, only a single phonon mode exists. We further reveal that InSe possesses the lowest thermal conductance among the known two-dimensional materials due to the low cut-off frequency, low phonon group velocities and the presence of large frequency gaps. These unique behaviors of monolayer InSe can enable the fabrication of novel devices, such as thermoelectric module, single-mode phonon channel and phononic laser.

Indium selenide monolayer: strain-enhanced optoelectronic response and dielectric environment-tunable 2D exciton features

Electronic and optical performances of the β-InSe monolayer (ML) are considerably boosted by tuning the corresponding band energies through lattice in-plane compressive strain engineering. First principles calculations show an indirect-direct gap transition with a large bandgap size. The crossover is due to different responses of the near-gap state energies with respect to strain. This is explained by the variation of In-Se bond length, the bond nature of near-band-edge electronic orbital and of the momentum angular contribution versus in-plane compressive strain. The effective masses of charge carriers are also found to be highly modulated and significantly light at the indirect-direct-gap transition. The tuned optical response of the resulting direct-gap ML β-InSe is evaluated versus applied energy to infer the allowed optical transitions, dielectric constants, semiconductor-metal behavior and refractive index. The environmental dielectric engineering of exciton behavior of the resulting direct-gap ML β-InSe is handled within the effective mass Wannier-Mott model and is expected to be important. Our results highlight the increase of binding energy and red-shifted exciton energy with decreasing screening substrates, resulting in a stable exciton at room temperature. The intensity and energy of the ground-state exciton emission are expected to be strongly influenced under substrate screening effect. According to our findings, the direct-gap ML β-InSe assures tremendous 2D optoelectronic and nanoelectronic merits that could overcome several limitations of unstrained ML β-InSe.

The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

Oxidation Mechanism and Protection Strategy of Ultrathin Indium Selenide: Insight from Theory

Ultrathin indium selenide (InSe), as a newly emerging two-dimensional material with high carrier mobility and a broad absorption spectrum, has been the focus of current research. However, the long-term environmental instability of atomically thin InSe seriously limits its practical applications. To develop an effective strategy to protect InSe, it is crucial to reveal the degradation mechanism at the atomic level. By employing density functional theory and ab initio molecular dynamics simulations, we provide an in-depth understanding of the oxidation mechanism of InSe. The defect-free InSe presents excellent stability against oxidation. Nevertheless, the Se vacancies on the surface can react with water and oxygen in air directly and activate the neighboring In-Se bonds on the basal plane for further oxidation, leading to complete degradation of InSe into oxidation products of In₂O₃ and elemental Se. Furthermore, we propose an efficient strategy to repair the Se vacancies by thiol chemistry. In this way, the repaired surface can resist oxidation from oxygen and retain the original high electron mobility of pristine InSe simultaneously.

Native defects and substitutional impurities in two-dimensional monolayer InSe

As a burgeoning two-dimensional (2D) semiconductor, InSe holds unique electronic properties and great promise for novel 2D electronic devices. To advance the development of 2D InSe devices, the exploration of n-type and p-type conductivities of InSe is indispensable. With first-principles calculations, we investigate the properties of native defects and substitutional impurities in monolayer InSe, including formation energies and ionization energies. As the traditional jellium scheme encounters an energy divergence for charged defects in 2D materials, an extrapolation approach is adopted here to obtain convergent energies. We find that In vacancy is a deep acceptor and Se vacancy is an electrically neutral defect. All the studied substitutional dopants at In or Se sites have high ionization energies in the range of 0.41-0.84 eV. However, electrons may transport through the defect-bound band edge states in X_Se (X = Cl, Br, and I) as a potential source of n-type conductivity.

Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation

Gallium selenide is one of the most promising candidates to extend the window of band gap values provided by existing two-dimensional semiconductors deep into the visible potentially reaching the ultraviolet. However, the tunability of its band gap by means of quantum confinement effects is still unknown, probably due to poor nanosheet stability. Here, we demonstrate that the optical band gap band of GaSe nanosheets can be tuned by ∼120 meV from bulk to 8 nm thick. The luminescent response of very thin nanosheets (<8 nm) is strongly quenched due to early oxidation. Oxidation favors the emergence of sharp material nanospikes at the surface attributable to strain relaxation. Simultaneously, incorporated oxygen progressively replaces selenium giving rise to Ga₂O_3, with a residual presence of Ga₂Se₃ that tends to desorb. These results are relevant for the development and design of visible/ultraviolet electronics and optoelectronics with tunable functionalities based on atomically thin GaSe.

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Large-scale synthesis of two-dimensional (2D) materials is one of the significant issues for fabricating layered materials into practical devices. As one of the typical III-VI semiconductors, InSe has attracted much attention due to its outstanding electrical transport property, attractive quantum physics characteristics, and dramatic photoresponse when it is reduced to atomic scale. However, scalable synthesis of single phase 2D InSe has not yet been achieved so far, greatly hindering further fundamental studies and device applications. Here, we demonstrate the direct growth of wafer-scale layered InSe nanosheets by pulsed laser deposition (PLD). The obtained InSe layers exhibit good uniformity, high crystallinity with macro texture feature, and stoichiometric growth by in situ precise control. The characterization of optical properties indicates that PLD grown InSe nanosheets have a wide range tunable band gap (1.26-2.20 eV) among the large-scale 2D crystals. The device demonstration of field-effect transistor shows the n-type channel feature with high mobility of 10 cm² V^-1 s^-1. Upon illumination, InSe-based phototransistors show a broad photoresponse to the wavelengths from ultraviolet to near-infrared. The maximum photoresponsivity attains 27 A/W, plus a response time of 0.5 s for the rise and 1.7 s for the decay, demonstrating the strong and fast photodetection ability. Our findings suggest that the PLD grown InSe would be a promising choice for future device applications in the 2D limit.