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Chen X, Alradhi H, Jin ZM, Zhu L, Sanchez AM, Ma S, Zhuang Q, Shao J. Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires. OPTICS LETTERS 2022; 47:5208-5211. [PMID: 36181223 DOI: 10.1364/ol.473154] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a reference. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40 -140 K and up to approximately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high-temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analyses for narrow-gap NW evaluation.
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Chen L, Adeyemo SO, Fonseka HA, Liu H, Kar S, Yang H, Velichko A, Mowbray DJ, Cheng Z, Sanchez AM, Joyce HJ, Zhang Y. Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer. NANO LETTERS 2022; 22:3433-3439. [PMID: 35420433 PMCID: PMC9097579 DOI: 10.1021/acs.nanolett.2c00805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 03/25/2022] [Indexed: 06/14/2023]
Abstract
The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2-3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30-40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.
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Affiliation(s)
- LuLu Chen
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Stephanie O. Adeyemo
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Srabani Kar
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Hui Yang
- Institute
for Materials Discovery, University College
London, Roberts Building, Malet Place, London, WC1E 7JE, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Zhiyuan Cheng
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Hannah J Joyce
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Yunyan Zhang
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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Sarkar K, Devi P, Kim KH, Kumar P. III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities. Trends Analyt Chem 2020. [DOI: 10.1016/j.trac.2020.115989] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
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Khayrudinov V, Remennyi M, Raj V, Alekseev P, Matveev B, Lipsanen H, Haggren T. Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates. ACS NANO 2020; 14:7484-7491. [PMID: 32437132 PMCID: PMC7315631 DOI: 10.1021/acsnano.0c03184] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 05/21/2020] [Indexed: 05/27/2023]
Abstract
Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, plastic substrates can offer many advantages such as extremely low price, light weight, mechanical flexibility, shock and thermal resistance, and biocompatibility. We explore the direct growth of high-quality III-V nanowires on flexible plastic substrates by metal-organic vapor phase epitaxy (MOVPE). We synthesize InAs and InP nanowires on polyimide and show that the fabricated NWs are optically active with strong light emission in the mid-infrared range. We create a monolithic flexible nanowire-based p-n junction device on plastic in just two fabrication steps. Overall, we demonstrate that III-V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and we believe that our results will further advance the development of the nanowire-based flexible electronic devices.
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Affiliation(s)
- Vladislav Khayrudinov
- Department
of Electronics and Nanoengineering, Micronova,
Aalto University, P.O. Box 13500, Espoo FI-00076, Finland
| | | | - Vidur Raj
- Department
of Electronic Materials Engineering, Research School of Physics and
Engineering, The Australian National University, Canberra, ACT 2601, Australia
| | | | | | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Micronova,
Aalto University, P.O. Box 13500, Espoo FI-00076, Finland
| | - Tuomas Haggren
- Department
of Electronics and Nanoengineering, Micronova,
Aalto University, P.O. Box 13500, Espoo FI-00076, Finland
- Department
of Electronic Materials Engineering, Research School of Physics and
Engineering, The Australian National University, Canberra, ACT 2601, Australia
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5
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Li B, Li S, Sun Y, Li S, Chen G, Wang X. Enhanced luminescence properties of InAs nanowires via organic and inorganic sulfide passivation. NANOTECHNOLOGY 2019; 30:445704. [PMID: 31365914 DOI: 10.1088/1361-6528/ab3742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
InAs nanowires (NWs) have been considered to be highly suitable for future nanoscale photonic applications in mid-wave infrared region. However, progress in this area has been seriously hampered because of the poor radiative efficiency of InAs NWs attributed to their non-radiative (NR) surface. Herein, we demonstrated that a significant improvement of optical performances of InAs NWs grown by chemical vapor deposition could be achieved via sulfur passivation process. Luminescence properties of InAs NWs via organic sulfide (ODT) and inorganic sulfide ((NH4)2S) passivation were investigated by detailed photoluminescence (PL) measurement, which exhibited ∼17-fold enhancement in the intensity of optical emission compared to unpassivated InAs NWs. Moreover, the results of this investigation revealed that compared to ODT passivation, (NH4)2S passivation provided a more effective method to enhance the luminescence intensity even up to room temperature. This improvement of optical emission arises from the efficient passivation of surface defect states which act as competing NR centers. Furthermore, the stability of the passivated InAs NWs was investigated by PL measurement as a function of storage time in air. These findings are important for the successful implementation of optoelectronic devices based on InAs NWs.
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Affiliation(s)
- Baobao Li
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
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6
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Zhang K, Li X, Dai W, Toor F, Prineas JP. Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core-Shell Nanowires Grown on Silicon. NANO LETTERS 2019; 19:4272-4278. [PMID: 31244233 DOI: 10.1021/acs.nanolett.9b00517] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on carrier recombination within self-catalyzed InAs/InAlAs core-shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump-probe spectroscopy measurements were performed from 77-293 K on the free-standing, variable-sized NWs grown on lattice-mismatched Si(111) substrates, independently varying NW length and diameter. We found NW carrier recombination in the interior is nontrivial compared to the surface recombination, especially at 293 K. Surface recombination is dominated by carrier recombination at the NW sidewall, while contributions from the highly strained, impure NW base are negligible.
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7
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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Ren D, Azizur-Rahman KM, Rong Z, Juang BC, Somasundaram S, Shahili M, Farrell AC, Williams BS, Huffaker DL. Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al 2O 3 Passivation. NANO LETTERS 2019; 19:2793-2802. [PMID: 30676752 DOI: 10.1021/acs.nanolett.8b04420] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photodetectors at MWIR composed of vertical selective-area InAsSb nanowire photoabsorber arrays on large bandgap InP substrate with nanoscale plasmonic gratings. We accomplish this by significantly suppressing the nonradiative recombination at the InAsSb nanowire surfaces by introducing ex situ conformal Al2O3 passivation shells. Transient simulations estimate an extremely low surface recombination velocity on the order of 103 cm/s. We further achieve room-temperature photoluminescence emission from InAsSb nanowires, spanning the entire MWIR regime from 3 to 5 μm. A dry-etching process is developed to expose only the top nanowire facets for metal contacts, with the sidewalls conformally covered by Al2O3 shells, allowing for a higher internal quantum efficiency. Based on these techniques, we fabricate nanowire photodetectors with an optimized pitch and diameter and demonstrate room-temperature spectral response with MWIR detection signatures up to 3.4 μm. The results of this work indicate that uncooled focal plane arrays at MWIR on low-cost InP substrates can be designed with nanostructured absorbers for highly compact and fully integrated detection platforms.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Bor-Chau Juang
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Mohammad Shahili
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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9
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Ren D, Meng X, Rong Z, Cao M, Farrell AC, Somasundaram S, Azizur-Rahman KM, Williams BS, Huffaker DL. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions. NANO LETTERS 2018; 18:7901-7908. [PMID: 30444964 DOI: 10.1021/acs.nanolett.8b03775] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs-InP heterojunctions. We measure a rectification ratio greater than 300 at room temperature, which indicates a desirable diode performance. The dark current density, normalized to the area of nanowire heterojunctions, is 130 mA/cm2 at a temperature of 300 K and a reverse bias of 0.5 V, making it comparable to the state-of-the-art bulk InAs p- i- n photodiodes. An analysis of the Arrhenius plot of the dark current at reverse bias yields an activation energy of 175 meV from 190 to 300 K, suggesting that the Shockley-Read-Hall (SRH) nonradiative current is the primary contributor to the dark current. By using three-dimensional electrical simulations, we determine that the SRH nonradiative current originates from the acceptor-like surface traps at the nanowire-passivation heterointerfaces. The spectral response at room temperature is also measured, with a clear photodetection signature observed at wavelengths up to 2.5 μm. This study provides an understanding of dark current for small band gap selective-area nanowires and paves the way to integrate these improved nanostructured photoabsorbers on large band gap substrates for high-performance photodetectors at SWIR.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiao Meng
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Minh Cao
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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10
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Ji X, Chen X, Yang X, Zhang X, Shao J, Yang T. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires. NANOSCALE RESEARCH LETTERS 2018; 13:269. [PMID: 30187239 PMCID: PMC6125257 DOI: 10.1186/s11671-018-2690-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2018] [Accepted: 08/28/2018] [Indexed: 06/08/2023]
Abstract
We report on the growth and characterization of InGaAs/InP core-shell nanowires on Si-(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core-shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs core and even to the bending of the nanowires. Transmission electron microscopy (TEM) measurements reveal that the InP shell is coherent with the InGaAs core without any misfit dislocations. Furthermore, photoluminescence (PL) measurements at 77 K show that the PL peak intensity from the InGaAs/InP core-shell nanowires displays a ∼ 100 times enhancement compared to the only InGaAs core sample without InP shell due to the passivation of surface states and effective carrier confinement resulting from InP shell layer. The results obtained here further our understanding of the growth behavior of strained core-shell heterostructure nanowires and may open new possibilities for applications in InGaAs/InP heterostructure nanowire-based optoelectronic devices on Si platform.
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Affiliation(s)
- Xianghai Ji
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 People’s Republic of China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083 People’s Republic of China
| | - Xiaoguang Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 People’s Republic of China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Xingwang Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 People’s Republic of China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083 People’s Republic of China
| | - Tao Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 People’s Republic of China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
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