Strain-Dependent Edge Structures in MoS2 Layers

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition

The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.

Effect of MoSe2 nanoribbons with NW30 edge reconstructions on the electronic and catalytic properties by strain engineering

Monolayer transition metal dichalcogenides (TMDs), typical two-dimensional semiconductors, have been extensively studied for their extraordinary physical properties and utilized for nanoelectronics and optoelectronics. However, the finite samples and discontinuity in the synthesis process of TMD materials definitely induce defect edges in nanoribbons and greatly influence the device performance. Here, we systematically studied the atomic structures, energetic and mechanical stability, and electronic and catalytic properties of MoSe₂ nanoribbons on the basis of experiments. Clear benefits of ZZSe-Mo-NW30 edged nanoribbons were found to evidently increase the dynamic stability according to our first-principles calculations. Meanwhile, unsaturated Mo atoms at the edge sites induced local magnetic moments up to 0.54 μ_B and changed the chemical environments of adjacent Se atoms, which acted as active sites for the hydrogen evolution reaction (HER) with a lower onset potential of -0.04 eV. The external tensile strain on these nanoribbons can have negligible effects on the electronic and catalytic properties. The onset potential of the ZZSe-Mo-NW30 edged nanoribbons only changed 0.03 eV under critical tensile strain. The atomic-scale research of edge reconstructions in TMD materials provides new opportunities to modulate the synthesis mechanism for experiments and defect-engineering applications in electrochemical catalysts.

Lattice relaxation effects on the collective resonance spectra of a finite dipole array

Applying lattice parameter relaxation on a finite photonic crystal can adjust the smoothness of its surface lattice resonance spectral peak.

Two dimensional semiconducting materials for ultimately scaled transistors

Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

First-Principles Calculation of Optoelectronic Properties in 2D Materials: The Polytypic WS2 Case

The phenomenon of polytypism, namely unconventional crystal phases displaying a mixture of stacking sequences, represents a powerful handle to design and engineer novel physical properties in two-dimensional (2D) materials. In this work, we characterize from first-principles the optoelectronic properties associated with the 2H/3R polytypism occurring in WS₂ nanomaterials by means of density functional theory (DFT) calculations. We evaluate the band gap, optical response, and energy-loss function associated with 2H/3R WS₂ nanomaterials and compare our predictions with experimental measurements of electron energy-loss spectroscopy (EELS) carried out in nanostructures exhibiting the same polytypism. Our results provide further input to the ongoing efforts toward the integration of polytypic 2D materials into functional devices.

Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides

Direct top-down nanopatterning of semiconductors is a powerful tool for engineering properties of optoelectronic devices. Translating this approach to two-dimensional semiconductors such as monolayer transition metal dichalcogenides (TMDs) is challenging because of both the small scales required for confinement and the degradation of electronic and optical properties caused by high-energy and high-dose electron radiation used for high-resolution top-down direct electron beam patterning. We show that encapsulating a TMD monolayer with hexagonal boron nitride preserves the narrow exciton linewidths and emission intensity typical in such heterostructures after electron beam lithography, allowing direct patterning of functional optical monolayer nanostructures on scales of a few tens of nanometers. We leverage this fabrication method to study size-dependent effects on nanodot arrays of MoS2 and MoSe2 as well as laterally confined electrical transport devices, demonstrating the potential of top-down lithography for nanoscale TMD optoelectronics.

Quantitatively Deciphering Electronic Properties of Defects at Atomically Thin Transition-Metal Dichalcogenides

Defects can locally tailor the electronic properties of 2D materials, including the band gap and electron density, and possess the merit for optical and electronic applications. However, it is still a great challenge to realize rational defect engineering, which requires quantitative study of the effect of defects on electronic properties under ambient conditions. In this work, we employed tip-enhanced photoluminescence (TEPL) spectroscopy to obtain the PL spectra of different defects (wrinkle and edge) in mechanically exfoliated thin-layer transition metal dichalcogenides (TMDCs) with nanometer spatial resolution. We quantitatively obtained the band gap and electron density at defects by analyzing the wavelength and intensity ratio of excitons and trions. We further visualized the strain distribution across a wrinkle and the edge-induced reconstructive regions of the band gap and electron density by TEPL line scans. The doping effect on the Fermi level and optical performance was unveiled through comparative studies of edges on TMDC monolayers of different doping types. These quantitative results are vital to guide defect engineering and design and fabrication of TMDC-based optoelectronics devices.

Moiré Fringe Method via Scanning Transmission Electron Microscopy

Moiré fringe, originated from the beating of two sets of lattices, is a commonly observed phenomenon in physics, optics, and materials science. Recently, a new method of creating moiré fringe via scanning transmission electron microscopy (STEM) has been developed to image materials' structures at a large field of view. Moreover, this method shows great advantages in studying atomic structures of beam sensitive materials by significantly reduced electron dose. Here, the development of the STEM moiré fringe (STEM-MF) method is reviewed. The authors first introduce the theory of STEM-MF and then discuss the advances of this technique in combination with geometric phase analysis, annular bright field imaging, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy. Applications of STEM-MF on strain, defects, 2D materials, and beam-sensitive materials are further summarized. Finally, the authors' perspectives on the future directions of STEM-MF are presented.

Structural Defects Modulate Electronic and Nanomechanical Properties of 2D Materials

Two-dimensional materials such as graphene and molybdenum disulfide are often subject to out-of-plane deformation, but its influence on electronic and nanomechanical properties remains poorly understood. These physical distortions modulate important properties which can be studied by atomic force microscopy and Raman spectroscopic mapping. Herein, we have identified and investigated different geometries of line defects in graphene and molybdenum disulfide such as standing collapsed wrinkles, folded wrinkles, and grain boundaries that exhibit distinct strain and doping. In addition, we apply nanomechanical atomic force microscopy to determine the influence of these defects on local stiffness. For wrinkles of similar height, the stiffness of graphene was found to be higher than that of molybdenum disulfide by 10-15% due to stronger in-plane covalent bonding. Interestingly, deflated graphene nanobubbles exhibited entirely different characteristics from wrinkles and exhibit the lowest stiffness of all graphene defects. Density functional theory reveals alteration of the bandstructures of graphene and MoS₂ due to the wrinkled structure; such modulation is higher in MoS₂ compared to graphene. Using this approach, we can ascertain that wrinkles are subject to significant strain but minimal doping, while edges show significant doping and minimal strain. Furthermore, defects in graphene predominantly show compressive strain and increased carrier density. Defects in molybdenum disulfide predominantly show tensile strain and reduced carrier density, with increasing tensile strain minimizing doping across all defects in both materials. The present work provides critical fundamental insights into the electronic and nanomechanical influence of intrinsic structural defects at the nanoscale, which will be valuable in straintronic device engineering.

Structural-Defect-Mediated Grafting of Alkylamine on Few-Layer MoS2 and Its Potential for Enhancement of Tribological Properties

Two-dimensional transition-metal dichalcogenides possess inherent structural characteristics that can be harnessed for enhancement of tribological properties by making them dispersible in lube media. Here, we present a hydrothermal approach to preparing MoS₂ nanosheets comprising 4-10 molecular lamellae. A structural-defect-mediated route for grafting of octadecylamine (ODA) on MoS₂ nanosheets is outlined. The unsaturated d orbitals of Mo at the sulfur vacancies on the MoS₂ surface are coupled with the electron-rich nitrogen center of ODA and yield ODA-functionalized MoS₂ (MoS₂-ODA). The MoS₂-ODA nanosheets exhibit good dispersibility in lube base oil and are used as an additive (optimized dose: 0.1 mg·mL^-1) to mineral oil. It is shown that even at low concentration, MoS₂-ODA nanosheets significantly reduce the friction (48%) and wear (44%). Microscopy (field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM)) and spectroscopy (Raman and elemental mapping) analyses of worn scars revealed the formation of MoS₂-based protective thin films for lowering of friction and wear. This work, therefore, presents a pathway for low-friction lubricants by deploying functionalized low-dimensional material systems.

Robust Sample Preparation of Large-Area In- and Out-of-Plane Cross Sections of Layered Materials with Ultramicrotomy

Layered materials (LMs) such as graphene or MoS2 have attracted a great deal of interest recently. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information on complex nanostructures built upon LMs is to control the relative orientation of each sample prior to their inspection, e.g., with transmission electron microscopy (TEM). However, developing sample preparation methods that result in large inspection areas and ensure full control over the sample orientation while avoiding damage during the transfer to the TEM grid is challenging. Here, we demonstrate the feasibility of deploying ultramicrotomy for the preparation of LM samples in TEM analyses. We show how ultramicrotomy leads to the reproducible large-scale production of both in-plane and out-of-plane cross sections, with bulk vertically oriented MoS2 and WS2 nanosheets as a proof of concept. The robustness of the prepared samples is subsequently verified by their characterization by means of both high-resolution TEM and Raman spectroscopy measurements. Our approach is fully general and should find applications for a wide range of materials as well as of techniques beyond TEM, thus paving the way to the systematic large-area mass-production of cross-sectional specimens for structural and compositional studies.

Probing the edge-related properties of atomically thin MoS2 at nanoscale

Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS₂, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm⁻¹) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm⁻¹. The power of TERS demonstrated in MoS₂ can also be extended to other 2D materials, which may guide the defect engineering for desired properties.

Probing inevitable defects in two- dimensional materials is challenging. Here, the authors tackle this issue by using tip-enhanced Raman spectroscopy (TERS) to obtain distinctly different Raman features of edge defects in atomically thin MoS₂, and further probe their unique electronic properties as well as identify the armchair and zigzag edges.

Aqueous Cathodic Exfoliation Strategy toward Solution-Processable and Phase-Preserved MoS2 Nanosheets for Energy Storage and Catalytic Applications

The production of MoS₂ nanosheets by electrochemical exfoliation routes holds great promise as a means to access this two-dimensional material in large quantities for different practical applications. However, the use of electrolytes based on synthetic organic salts and solvents, as well as issues related to the unwanted oxidation and/or phase transformation of the exfoliated nanosheets, constitute significant obstacles that hinder the industrial adoption of the electrochemical approach. Here, we introduce a safe and sustainable method for the cathodic delamination of MoS₂ that makes use of aqueous solutions of very simple and widely available salts, mainly KCl, as the electrolyte. Combined with an appropriate biomolecule-based solvent transfer protocol, such an electrolytic exfoliation route is shown to afford colloidally dispersed, oxide-free, and phase-preserved MoS₂ nanosheets of high structural quality in considerable yields. The mechanisms behind the efficient aqueous delamination of the bulk MoS₂ cathode are also discussed and rationalized on the basis of the penetration of hydrated cations from the electrolyte between its layers and the immediate reduction of the accompanying water molecules. An asymmetric supercapacitor assembled with a cathodic MoS₂ nanosheet-single walled carbon nanotube hybrid as the positive electrode and activated carbon as the negative electrode delivered energy densities (e.g., 26 W h kg^-1 at 750 W kg^-1 in 6 M KOH) that were competitive with those of other MoS₂-based asymmetric devices. When used as a catalyst for the reduction of nitroarenes, the present cathodically exfoliated nanosheets exhibited one of the highest activities reported so far with MoS₂ nanostructures, the origin of which is accounted for as well. Overall, by facilitating access to this two-dimensional material through a particularly simple, efficient, and cost-effective technique, these results should expedite the practical implementation of MoS₂ nanosheets in energy storage, catalysis, and beyond.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Morphological Engineering of Winged Au@MoS2 Heterostructures for Electrocatalytic Hydrogen Evolution

Molybdenum disulfide (MoS₂) has been recognized as a promising cost-effective catalyst for water-splitting hydrogen production. However, the desired performance of MoS₂ is often limited by insufficient edge-terminated active sites, poor electrical conductivity, and inefficient contact to the supporting substrate. To address these limitations, we developed a unique nanoarchitecture (namely, winged Au@MoS₂ heterostructures enabled by our discovery of the "seeding effect" of Au nanoparticles for the chemical vapor deposition synthesis of vertically aligned few-layer MoS₂ wings). The winged Au@MoS₂ heterostructures provide an abundance of edge-terminated active sites and are found to exhibit dramatically improved electrocatalytic activity for the hydrogen evolution reaction. Theoretical simulations conducted for this unique heterostructure reveal that the hydrogen evolution is dominated by the proton adsorption step, which can be significantly promoted by introducing sufficient edge active sites. Our study introduces a new morphological engineering strategy to make the pristine MoS₂ layered structures highly competitive earth-abundant catalysts for efficient hydrogen production.

Mapping Catalytically Relevant Edge Electronic States of MoS2

Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity.