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Pistore V, Viti L, Schiattarella C, Wang Z, Law S, Mitrofanov O, Vitiello MS. Holographic Nano-Imaging of Terahertz Dirac Plasmon Polaritons in Topological Insulator Antenna Resonators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308116. [PMID: 38152928 DOI: 10.1002/smll.202308116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 11/17/2023] [Indexed: 12/29/2023]
Abstract
Excitation of Dirac plasmon polaritons (DPPs) in bi-dimensional materials have attracted considerable interest in recent years, both from perspectives of understanding their physics and exploring their transformative potential for nanophotonic devices, including ultra-sensitive plasmonic sensors, ultrafast saturable absorbers, modulators, and switches. Topological insulators (TIs) represent an ideal technological platform in this respect because they can support plasmon polaritons formed by Dirac carriers in the topological surface states. Tracing propagation of DPPs is a very challenging task, particularly at terahertz (THz) frequencies, where the DPP wavelength becomes over one order of magnitude shorter than the free space photon wavelength. Furthermore, severe attenuation hinders the comprehensive analysis of their characteristics. Here, the properties of DPPs in real TI-based devices are revealed. Bi2Se3 rectangular antennas can efficiently confine the propagation of DPPs to a single dimension and, as a result, enhance the DPPs visibility despite the strong intrinsic attenuation. The plasmon dispersion and loss properties from plasmon profiles are experimentally determined, along the antennas, obtained using holographic near-field nano-imaging in a wide range of THz frequencies, from 2.05 to 4.3 THz. The detailed investigation of the unveiled DPP properties can guide the design of novel topological quantum devices exploiting their directional propagation.
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Affiliation(s)
- Valentino Pistore
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy
| | - Leonardo Viti
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy
| | - Chiara Schiattarella
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy
| | - Zhengtianye Wang
- Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716, USA
| | - Stephanie Law
- Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Oleg Mitrofanov
- University College London, Electronic and Electrical Engineering, London, WC1E 7JE, UK
| | - Miriam S Vitiello
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy
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Xiong X, Yin K, Bai J, Zhu P, Fan J, Zhang X, Shi Q, Guo Y, Wang Z, Ma D, Han J. Ordered Assembly of DNA on Topological Insulator Bi 2Se 3 and Octadecylamine for a Sensitive Biosensor. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:4466-4474. [PMID: 36929878 DOI: 10.1021/acs.langmuir.3c00146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Controlling the assembly of DNA in order on a suitable electrode surface is of great significance for biosensors and disease diagnosis, but it is full of challenges. In this work, we creatively assembled DNA on the surface of octadecylamine (ODA)-modified topological insulator (Tls) Bi2Se3 and developed an electrochemical biosensor to detect biomarker DNA of coronavirus disease 2019 (COVID-19). A high-quality Bi2Se3 sheet was obtained from a single crystal synthesized in our lab. A uniform ODA layer was coated in argon by chemical vapor deposition (CVD). We observed and analyzed the assembly and mechanism of single-strand DNA (ssDNA) and double-strand DNA (dsDNA) on the Bi2Se3 surface through atomic force microscopy (AFM) and molecular dynamics (MD) simulations. The electrochemical signal revealed that the biosensor based on the DNA/ODA/Bi2Se3 electrode has a wide linear detection range from 1.0 × 10-12 to 1.0 × 10-8 M, with the limit of detection as low as 5 × 10-13 M. Bi2Se3 has robust surface states and improves the electrochemical signal-to-noise ratio, while the uniform ODA layer guides high-density ordered DNA, enhancing the sensitivity of the biosensor. Our work demonstrates that the ordered DNA/ODA/Bi2Se3 electrode surface has great application potential in the field of biosensing and disease diagnosis.
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Affiliation(s)
- Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China
| | - Kangjie Yin
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jiangyue Bai
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Fan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Qingfan Shi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Dashuai Ma
- Institute for Structure and Function & Department of Physics, Chongqing University, Chongqing 400044, China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China
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Krishnamoorthy HNS, Dubrovkin AM, Adamo G, Soci C. Topological Insulator Metamaterials. Chem Rev 2023; 123:4416-4442. [PMID: 36943013 DOI: 10.1021/acs.chemrev.2c00594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2023]
Abstract
Confinement of electromagnetic fields at the subwavelength scale via metamaterial paradigms is an established method to engineer light-matter interaction in most common material systems, from insulators to semiconductors and from metals to superconductors. In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of their electronic band structure. In this review, we survey various topological material classes from a photonics standpoint, including crystal growth and lithographic structuring methods. We discuss how exotic electronic features such as spin-selective Dirac plasmon polaritons in topological insulators or hyperbolic plasmon polaritons in Weyl semimetals may give rise to unconventional magneto-optic, nonlinear, and circular photogalvanic effects in metamaterials across the visible to infrared spectrum. Finally, we dwell on how these effects may be dynamically controlled by applying external perturbations in the form of electric and magnetic fields or ultrafast optical pulses. Through these examples and future perspectives, we argue that topological insulator, semimetal and superconductor metamaterials are unique systems to bridge the missing links between nanophotonic, electronic, and spintronic technologies.
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Affiliation(s)
- Harish N S Krishnamoorthy
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Alexander M Dubrovkin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Giorgio Adamo
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Cesare Soci
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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Han J, Mao P, Chen H, Yin JX, Wang M, Chen D, Li Y, Zheng J, Zhang X, Ma D, Ma Q, Yu ZM, Zhou J, Liu CC, Wang Y, Jia S, Weng Y, Hasan MZ, Xiao W, Yao Y. Optical bulk-boundary dichotomy in a quantum spin Hall insulator. Sci Bull (Beijing) 2023:S2095-9273(23)00074-9. [PMID: 36740530 DOI: 10.1016/j.scib.2023.01.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Revised: 11/23/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023]
Abstract
The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump-probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump-probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.
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Affiliation(s)
- Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Pengcheng Mao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Analysis & Testing Center, Beijing Institute of Technology, Beijing 100081, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Maoyuan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Xiamen University, Xiamen 361005, China
| | - Dongyun Chen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jingchuan Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Dashuai Ma
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Chongqing University, Chongqing 400044, China
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill MA 02467, USA
| | - Zhi-Ming Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jinjian Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Cheng-Cheng Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuxiang Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
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5
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Ruckhofer A, Benedek G, Bremholm M, Ernst WE, Tamtögl A. Observation of Dirac Charge-Density Waves in Bi 2Te 2Se. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:476. [PMID: 36770437 PMCID: PMC9919891 DOI: 10.3390/nano13030476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 01/18/2023] [Accepted: 01/19/2023] [Indexed: 06/18/2023]
Abstract
While parallel segments in the Fermi level contours, often found at the surfaces of topological insulators (TIs), would imply "strong" nesting conditions, the existence of charge-density waves (CDWs)-periodic modulations of the electron density-has not been verified up to now. Here, we report the observation of a CDW at the surface of the TI Bi2Te2Se(111), below ≈350K, by helium-atom scattering and, thus, experimental evidence for a CDW involving Dirac topological electrons. Deviations of the order parameter observed below 180K, and a low-temperature break of time reversal symmetry, suggest the onset of a spin-density wave with the same period as the CDW in the presence of a prominent electron-phonon interaction, originating from Rashba spin-orbit coupling.
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Affiliation(s)
- Adrian Ruckhofer
- Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria
| | - Giorgio Benedek
- Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano, Italy
- Donostia International Physics Center, University of the Basque Country, Paseo M. de Lardizabal 4, 20018 Donostia/San Sebastián, Spain
| | - Martin Bremholm
- Centre for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, 8000 Aarhus, Denmark
| | - Wolfgang E. Ernst
- Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria
| | - Anton Tamtögl
- Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria
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6
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In C, Kim UJ, Choi H. Two-dimensional Dirac plasmon-polaritons in graphene, 3D topological insulator and hybrid systems. LIGHT, SCIENCE & APPLICATIONS 2022; 11:313. [PMID: 36302746 PMCID: PMC9613982 DOI: 10.1038/s41377-022-01012-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/22/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Collective oscillations of massless particles in two-dimensional (2D) Dirac materials offer an innovative route toward implementing atomically thin devices based on low-energy quasiparticle interactions. Strong confinement of near-field distribution on the 2D surface is essential to demonstrate extraordinary optoelectronic functions, providing means to shape the spectral response at the mid-infrared (IR) wavelength. Although the dynamic polarization from the linear response theory has successfully accounted for a range of experimental observations, a unified perspective was still elusive, connecting the state-of-the-art developments based on the 2D Dirac plasmon-polaritons. Here, we review recent works on graphene and three-dimensional (3D) topological insulator (TI) plasmon-polariton, where the mid-IR and terahertz (THz) radiation experiences prominent confinement into a deep-subwavelength scale in a novel optoelectronic structure. After presenting general light-matter interactions between 2D Dirac plasmon and subwavelength quasiparticle excitations, we introduce various experimental techniques to couple the plasmon-polaritons with electromagnetic radiations. Electrical and optical controls over the plasmonic excitations reveal the hybridized plasmon modes in graphene and 3D TI, demonstrating an intense near-field interaction of 2D Dirac plasmon within the highly-compressed volume. These findings can further be applied to invent optoelectronic bio-molecular sensors, atomically thin photodetectors, and laser-driven light sources.
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Affiliation(s)
- Chihun In
- Department of Physics, Freie Universität Berlin, Berlin, 14195, Germany
- Department of Physical Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, Berlin, 14195, Germany
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Un Jeong Kim
- Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyunyong Choi
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea.
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7
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Xiong X, Zhu P, Li S, Jiang Y, Ma Y, Shi Q, Zhang X, Shu X, Wang Z, Sun L, Han J. Electrochemical biosensor based on topological insulator Bi 2Se 3 tape electrode for HIV-1 DNA detection. Mikrochim Acta 2022; 189:285. [PMID: 35851426 DOI: 10.1007/s00604-022-05365-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Accepted: 06/01/2022] [Indexed: 10/17/2022]
Abstract
A large-size Bi2Se3 tape electrode (BTE) was prepared by peeling off a 2 × 1 × 0.5 cm high-quality single crystal. The feasibility of using the flexible BTE as an efficient bioplatform to load Au nanoparticles and probe DNA for HIV-1 DNA electrochemical sensing was explored. Differential pulse voltammetry (DPV) and electrochemical impedance spectroscopy (EIS) show that the resultant biosensor has a wide linear range from 0.1 fM to 1 pM, a low detection limit of 50 aM, excellent selectivity, reproducibility and stability, and is superior to the pM DNA detection level of Pt-Au, graphene-AuNPs hybrid biosensors. This outstanding performance is attributed to the intrinsic surface state of Bi2Se3 topological insulator in facilitating electron transfer. Therefore, BTE electrochemical biosensor platform has great potential in the application for sensitive detection of DNA biomarkers.
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Affiliation(s)
- Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Shanshan Li
- Department of Rheumatology, China-Japan Friendship Hospital, Beijing, 100029, China
| | - Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Yurong Ma
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Qingfan Shi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Xiaoming Shu
- Department of Rheumatology, China-Japan Friendship Hospital, Beijing, 100029, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China. .,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China.
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China. .,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China.
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8
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Mithun KP, Kar S, Kumar A, Muthu DVS, Ravishankar N, Sood AK. Dirac surface plasmons in photoexcited bismuth telluride nanowires: optical pump-terahertz probe spectroscopy. NANOSCALE 2021; 13:8283-8292. [PMID: 33890585 DOI: 10.1039/d0nr09087e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Collective excitation of Dirac plasmons in graphene and topological insulators has opened new possibilities of tunable plasmonic materials ranging from THz to mid-infrared regions. Using time resolved Optical Pump-Terahertz Probe (OPTP) spectroscopy, we demonstrate the presence of plasmonic oscillations in bismuth telluride nanowires (Bi2Te3 NWs) after photoexcitation using an 800 nm pump pulse. In the frequency domain, the differential conductivity (Δσ = σpump on-σpump off) spectrum shows a Lorentzian response where the resonance frequency (ωp), attributed to surface plasmon oscillations, shifts with photogenerated carrier density (n) as . This dependence establishes the absorption of THz radiation by the Dirac surface plasmon oscillations of the charge carriers in the Topological Surface States (TSS) of Bi2Te3 NWs. Moreover, we obtain a modulation depth, tunable by pump fluence, of ∼40% over the spectral range of 0.5 to 2.5 THz. In addition, the time evolution of Δσ(t) represents a long relaxation channel lasting for more than 50 ps. We model the decay dynamics of Δσ(t) using coupled second order rate equations, highlighting the contributions from surface recombination as well as from trap mediated relaxation channels of the photoinjected carriers.
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Affiliation(s)
- K P Mithun
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
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Maccaferri N, Meuret S, Kornienko N, Jariwala D. Speeding up Nanoscience and Nanotechnology with Ultrafast Plasmonics. NANO LETTERS 2020; 20:5593-5596. [PMID: 32787183 DOI: 10.1021/acs.nanolett.0c02452] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Surface plasmons are collective oscillations of free electrons at the interface between a conducting material and the dielectric environment. These excitations support the formation of strongly enhanced and confined electromagnetic fields. As well, they display fast dynamics lasting tens of femtoseconds and can lead to a strong nonlinear optical response at the nanoscale. Thus, they represent the perfect tool to drive and control fast optical processes, such as ultrafast optical switching, single photon emission, as well as strong coupling interactions to explore and tailor photochemical reactions. In this Virtual Issue, we gather several important papers published in Nano Letters in the past decade reporting studies on the ultrafast dynamics of surface plasmons.
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Affiliation(s)
- Nicolò Maccaferri
- Department of Physics and Materials Science, Université du Luxembourg, 162a avenue de la Faïencerie, L-1511, Luxembourg, Luxembourg
| | - Sophie Meuret
- CEMES, CNRS - UPR8011, Université de Toulouse, 31055 Toulouse, France
| | - Nikolay Kornienko
- Department of Chemistry, Université de Montréal, Roger-Gaudry Building, Montreal, Quebec H3C 3J7, Canada
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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10
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Li G, Zhou W, Zhang W, Ma G, Cui H, Gao Y, Huang Z, Chu J. Pump fluence dependence of ultrafast carrier dynamics in InSb measured by optical pump-terahertz probe spectroscopy. APPLIED OPTICS 2018; 57:9729-9734. [PMID: 30462008 DOI: 10.1364/ao.57.009729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2018] [Accepted: 10/24/2018] [Indexed: 06/09/2023]
Abstract
Ultrafast carrier dynamics in intrinsic and n-doped InSb crystals were studied by time-resolved terahertz spectroscopy using an optical pump-terahertz probe setup with pump fluence from 32 μJ/cm2 to 1910 μJ/cm2. With photoexcitation at 800 nm, the ultrafast photoinduced absorption and carrier recovery process of intrinsic and n-doped InSb showed strong pump fluence dependence. It was found that the magnitude of photoinduced absorption first increased and then decreased with pump fluence. The carrier recovery process could be well fitted with a single exponential curve at low pump fluence, but could be well fitted with a biexponential curve at high pump fluence when a fast photocarrier relaxation appeared. The magnitude of photoinduced absorption increased gradually at low pump fluence due to the increase of the carrier at the bottom of the conduction band by impact ionization. The magnitude of photoinduced absorption decreased gradually at high pump fluence, possibly due to the efficiency of transient Auger recombination greater than the rate of carriers generated in the impact ionization process. The fast decay process appearing at high pump fluence was thought to be dominated by transient Auger recombination.
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