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Fujii S, Fang N, Yamashita D, Kozawa D, Fong CF, Kato YK. van der Waals Decoration of Ultra-High- Q Silica Microcavities for χ (2)-χ (3) Hybrid Nonlinear Photonics. NANO LETTERS 2024; 24:4209-4216. [PMID: 38557205 PMCID: PMC11010230 DOI: 10.1021/acs.nanolett.4c00273] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Revised: 03/19/2024] [Accepted: 03/20/2024] [Indexed: 04/04/2024]
Abstract
Optical nonlinear processes are indispensable in a wide range of applications, including ultrafast lasers, microscopy, and quantum information technologies. Among the diverse nonlinear processes, second-order effects usually overwhelm the higher-order ones, except in centrosymmetric systems, where the second-order susceptibility vanishes to allow the use of the third-order nonlinearity. Here we demonstrate a hybrid photonic platform whereby the balance between second- and third-order susceptibilities can be tuned flexibly. By decorating ultra-high-Q silica microcavities with atomically thin tungsten diselenide, we observe cavity-enhanced second-harmonic generation and sum-frequency generation with continuous-wave excitation at a power level of only a few hundred microwatts. We show that the coexistence of second- and third-order nonlinearities in a single device can be achieved by carefully choosing the size and location of the two-dimensional material. Our approach can be generalized to other types of cavities, unlocking the potential of hybrid systems with controlled nonlinear susceptibilities for novel applications.
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Affiliation(s)
- Shun Fujii
- Quantum
Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan
- Department
of Physics, Faculty of Science and Technology, Keio University, Yokohama 223-8522, Japan
| | - Nan Fang
- Nanoscale
Quantum Photonics Laboratory, RIKEN Cluster
for Pioneering Research, Saitama 351-0198, Japan
| | - Daiki Yamashita
- Quantum
Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan
- Platform
Photonics Research Center, National Institute
of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8568, Japan
| | - Daichi Kozawa
- Quantum
Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan
- Nanoscale
Quantum Photonics Laboratory, RIKEN Cluster
for Pioneering Research, Saitama 351-0198, Japan
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Chee Fai Fong
- Nanoscale
Quantum Photonics Laboratory, RIKEN Cluster
for Pioneering Research, Saitama 351-0198, Japan
| | - Yuichiro K. Kato
- Quantum
Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan
- Nanoscale
Quantum Photonics Laboratory, RIKEN Cluster
for Pioneering Research, Saitama 351-0198, Japan
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2
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Ren T, Wang J, Han K, Kang Y, Kumar A, Zhang G, Wang Z, Oulton RF, Eda G, Gong X. Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity. NANO LETTERS 2023; 23:11601-11607. [PMID: 38063776 DOI: 10.1021/acs.nanolett.3c03357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional (2D) semiconductors have attracted great attention as a novel class of gain materials for low-threshold, on-chip coherent light sources. Despite several experimental reports on lasing, the underlying gain mechanism of 2D materials remains elusive due to a lack of key information, including modal gain and the confinement factor. Here, we demonstrate a novel approach to directly determine the absorption coefficient of monolayer WS2 by characterizing the whispering gallery modes in a van der Waals microdisk cavity. By exploiting the cavity's high intrinsic quality factor of 2.5 × 104, the absorption coefficient spectrum and confinement factor are experimentally resolved with unprecedented accuracy. The excitonic gain reduces the WS2 absorption coefficient by 2 × 104 cm-1 at room temperature, and the experimental confinement factor is found to agree with the theoretical prediction. These results are essential for unveiling the gain mechanism in emergent, low-threshold 2D-semiconductor-based laser devices.
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Affiliation(s)
- Tianhua Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Junyong Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Kaizhen Han
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Yuye Kang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Annie Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
| | - Gong Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
| | - Zhe Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117543, Singapore
| | - Rupert F Oulton
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Goki Eda
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117543, Singapore
| | - Xiao Gong
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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3
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Guo Y, Li Z, An N, Guo Y, Wang Y, Yuan Y, Zhang H, Tan T, Wu C, Peng B, Soavi G, Rao Y, Yao B. A Monolithic Graphene-Functionalized Microlaser for Multispecies Gas Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2207777. [PMID: 36210725 DOI: 10.1002/adma.202207777] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Optical-microcavity-enhanced light-matter interaction offers a powerful tool to develop fast and precise sensing techniques, spurring applications in the detection of biochemical targets ranging from cells, nanoparticles, and large molecules. However, the intrinsic inertness of such pristine microresonators limits their spread in new fields such as gas detection. Here, a functionalized microlaser sensor is realized by depositing graphene in an erbium-doped over-modal microsphere. By using a 980 nm pump, multiple laser lines excited in different mode families of the microresonator are co-generated in a single device. The interference between these splitting mode lasers produce beat notes in the electrical domain (0.2-1.1 MHz) with sub-kHz accuracy, thanks to the graphene-induced intracavity backward scattering. This allows for lab-free multispecies gas identification from a mixture, and ultrasensitive gas detection down to individual molecule.
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Affiliation(s)
- Yanhong Guo
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Zhaoyu Li
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Ning An
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yongzheng Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuchen Wang
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yusen Yuan
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
- School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Hao Zhang
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Teng Tan
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Caihao Wu
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Bo Peng
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Giancarlo Soavi
- Institute of Solid State Physics, Friedrich Schiller University Jena, 07743, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, 07745, Jena, Germany
| | - Yunjiang Rao
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
- Research Centre for Optical Fiber Sensing, Zhejiang Laboratory, Hangzhou, 310000, China
| | - Baicheng Yao
- Key Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, 611731, China
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4
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Coherent momentum control of forbidden excitons. Nat Commun 2022; 13:6916. [PMID: 36376323 PMCID: PMC9663599 DOI: 10.1038/s41467-022-34740-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Accepted: 11/04/2022] [Indexed: 11/16/2022] Open
Abstract
AbstractA double-edged sword in two-dimensional material science and technology is optically forbidden dark exciton. On the one hand, it is fascinating for condensed matter physics, quantum information processing, and optoelectronics due to its long lifetime. On the other hand, it is notorious for being optically inaccessible from both excitation and detection standpoints. Here, we provide an efficient and low-loss solution to the dilemma by reintroducing photonics bound states in the continuum (BICs) to manipulate dark excitons in the momentum space. In a monolayer tungsten diselenide under normal incidence, we demonstrated a giant enhancement (~1400) for dark excitons enabled by transverse magnetic BICs with intrinsic out-of-plane electric fields. By further employing widely tunable Friedrich-Wintgen BICs, we demonstrated highly directional emission from the dark excitons with a divergence angle of merely 7°. We found that the directional emission is coherent at room temperature, unambiguously shown in polarization analyses and interference measurements. Therefore, the BICs reintroduced as a momentum-space photonic environment could be an intriguing platform to reshape and redefine light-matter interactions in nearby quantum materials, such as low-dimensional materials, otherwise challenging or even impossible to achieve.
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5
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Tang H, Luo F, Cui Z, Xiao Y, Xu W, Zhu Z, Chen S, Wang X, Liu Y, Wang J, Peng G, Qin S, Zhu M. Electrically Controlled Wavelength-Tunable Photoluminescence from van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:19869-19877. [PMID: 35438495 DOI: 10.1021/acsami.2c02321] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Achieving facile control of the wavelength of light emitters is of great significance for many key applications in optoelectronics and photonics, including on-chip interconnection, super-resolution imaging, and optical communication. The Joule heating effect caused by electric current is widely applied in modulating the refractive index of silicon-based waveguides for reconfigurable nanophotonic circuits. Here, by utilizing localized Joule heating in the biased graphene device, we demonstrate electrically controlled wavelength-tunable photoluminescence (PL) from vertical van der Waals heterostructures combined by graphene and two-dimensional transition metal dichalcogenides (2D-TMDCs). By applying a moderate electric field of 6.5 kV·cm-1 to the graphene substrate, the PL wavelength of 2D-TMDCs exhibits a continuous tuning from 662 to 690 nm, corresponding to a bandgap reduction of 76 meV. The electric control is highly reversible during sweeping the bias back and forth. The temperature dependence of Raman and PL spectroscopy reveals that the current-induced local Joule heating effect plays a leading role in reducing the optical direct bandgap of TMDCs. The bias-dependent optical reflectivity and time-resolved photoluminescence measurements show a consistent reduction of the optical band gap of 2D-TMDCs and increased PL lifetimes with the electric field over the heterostructures. Moreover, we demonstrate the consistent device operation from 2D materials grown by chemical vapor deposition, showing great advantages for the scalability.
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Affiliation(s)
- Hongwu Tang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Fang Luo
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Ziru Cui
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yang Xiao
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Wei Xu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shula Chen
- School of Material Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Xiao Wang
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha, Hunan 410083, China
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Gang Peng
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
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6
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Shang J, Wu L, Feng S, Chen Y, Zhang H, Cong C, Huang W, Yu T. White-Light-Driven Resonant Emission from a Monolayer Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2103527. [PMID: 35129854 DOI: 10.1002/adma.202103527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Revised: 01/19/2022] [Indexed: 06/14/2023]
Abstract
Resonant emission in photonic structures is very useful to construct all-photonic circuits for optical interconnects and quantum computing. Optical generation of most resonant-emitting modes in photonic structures is obtained by coherent pumping rather than incoherent illumination. Particularly, the development of white-light- or even solar-powered on-chip light sources remains challenging but is very attractive in view of the much facile availability of these incoherent excitation sources. Here, net resonant emission from a monolayer semiconductor is demonstrated under simulated solar illumination by a white-light-emitting diode. The device is formed by embedding a 2D gain medium into a planar microcavity on a silicon wafer, which is compatible with the prevailing on-chip photonic technology. Coherent and white-light excitation sources are, respectively, selected for optical pumping, where the output light in two cases exhibits well-consistent resonant wavelength, linewidth, polarization, location, and Gaussian-beam profile. The fundamental TEM00 mode behaves as a doublet emission, resulting from anisotropy-induced non-degenerate states with orthogonal polarizations. The extraordinary spectral flipping is attributed to the competitive interplay of resonant absorption and emission. This work paves a way toward white-light or solar-powered state-of-the-art photonic applications at the chip scale.
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Affiliation(s)
- Jingzhi Shang
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, 710129, China
| | - Lishu Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Shun Feng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yu Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Hongbo Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wei Huang
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, 710129, China
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, National Jiangsu Synergetic Innovation Centre for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Ting Yu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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7
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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8
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Boosting quantum yields in two-dimensional semiconductors via proximal metal plates. Nat Commun 2021; 12:7095. [PMID: 34876573 PMCID: PMC8651657 DOI: 10.1038/s41467-021-27418-x] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 11/18/2021] [Indexed: 12/02/2022] Open
Abstract
Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, induced dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed within the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A theoretical model accounting for the screening of the dipole-dipole interaction is in a good agreement with the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters. The short exciton lifetime and strong exciton-exciton interaction in transition metal dichalcogenides limit the efficiency of exciton emission. Here, the authors show that exciton-exciton interaction in monolayer WS2 can be screened using proximal metal plates, leading to an improved quantum yield.
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9
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Bhatt P, Kaur K, George J. Enhanced Charge Transport in Two-Dimensional Materials through Light-Matter Strong Coupling. ACS NANO 2021; 15:13616-13622. [PMID: 34347448 DOI: 10.1021/acsnano.1c04544] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Strong light-matter interaction of functional materials is emerging as a promising area of research. Recent experiments suggest that material properties like charge transport can be controlled by coupling to a vacuum electromagnetic field. Here, we explored the design of a Fabry-Perot cavity in a field-effect transistor configuration and studied the charge transport in two-dimensional materials. The optical and electrical measurements of strongly coupled WS2 suggest an enhancement of electron transport at room temperature. Electron mobility is enhanced more than 50 times at ON resonance conditions. Similarly, Ion/Ioff ratio of the device increased by 2 orders of magnitude without chemical modification of the active layer. Cavity tuning and coupling strength-dependent studies support the evidence of modifying the electronic properties of the coupled system. A clear correlation in the effective mass of the polaritonic state and Schottky barrier height indicates a collective nature of light-matter interaction.
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Affiliation(s)
- Pooja Bhatt
- Indian Institute of Science Education and Research (IISER), Mohali, Punjab 140306, India
| | - Kuljeet Kaur
- Indian Institute of Science Education and Research (IISER), Mohali, Punjab 140306, India
| | - Jino George
- Indian Institute of Science Education and Research (IISER), Mohali, Punjab 140306, India
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10
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He J, Paradisanos I, Liu T, Cadore AR, Liu J, Churaev M, Wang RN, Raja AS, Javerzac-Galy C, Roelli P, Fazio DD, Rosa BLT, Tongay S, Soavi G, Ferrari AC, Kippenberg TJ. Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials. NANO LETTERS 2021; 21:2709-2718. [PMID: 33754742 DOI: 10.1021/acs.nanolett.0c04149] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.
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Affiliation(s)
- Jijun He
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | | | - Tianyi Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Junqiu Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mikhail Churaev
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Rui Ning Wang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Arslan S Raja
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Clément Javerzac-Galy
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Philippe Roelli
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Domenico De Fazio
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Barbara L T Rosa
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
- Institute for Solid State Physics, Friedrich-Schiller University Jena, 07743 Jena, Germany
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Tobias J Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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11
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Khelifa R, Back P, Flöry N, Nashashibi S, Malchow K, Taniguchi T, Watanabe K, Jain A, Novotny L. Coupling Interlayer Excitons to Whispering Gallery Modes in van der Waals Heterostructures. NANO LETTERS 2020; 20:6155-6161. [PMID: 32692568 DOI: 10.1021/acs.nanolett.0c02432] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Van der Waals heterostructures assembled from two-dimensional materials offer a promising platform to engineer structures with desired optoelectronic characteristics. Here we use waveguide-coupled disk resonators made of hexagonal boron nitride (h-BN) to demonstrate cavity-coupled emission from interlayer excitons of a heterobilayer of two monolayer transition metal dichalcogenides. We sandwich a MoSe2-WSe2 heterobilayer between two slabs of h-BN and directly pattern the resulting stack into waveguide-coupled disk resonators. This enables us to position the active materials into regions of highest optical field intensity, thereby maximizing the mode overlap and the coupling strength. Since the interlayer exciton emission energy is lower than the optical band gaps of the individual monolayers and since the interlayer transition itself has a weak oscillator strength, the circulating light is only weakly reabsorbed, which results in an unaffected quality factor. Our devices are fully waveguide-coupled and represent a promising platform for on-chip van der Waals photonics.
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Affiliation(s)
- Ronja Khelifa
- Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Patrick Back
- Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Nikolaus Flöry
- Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | | | | | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Achint Jain
- Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Lukas Novotny
- Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
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12
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Lee YJ, Das A, Talghader JJ. High-Q diamond microresonators in the long-wave infrared. OPTICS EXPRESS 2020; 28:5448-5458. [PMID: 32121765 DOI: 10.1364/oe.387255] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Accepted: 01/09/2020] [Indexed: 06/10/2023]
Abstract
High quality factor (Q) photonic devices in the room temperature thermal infrared region, corresponding to deeper long-wave infrared with wavelengths beyond 9 microns, have been demonstrated for the first time. Whispering gallery mode diamond microresonators were fabricated using single crystal diamond substrates and oxygen-based inductively coupled plasma (ICP) reactive ion etching (RIE) at high angles. The spectral characteristics of the devices were probed at room temperature using a tunable quantum cascade laser that was free space-coupled into the resonators. Light was extracted via an arsenic selenide (As2Se3) chalcogenide infrared fiber and directed to a cryogenically cooled mercury cadmium telluride (HgCdTe) detector. The quality factors were tested in multiple microresonators across a wide spectral range from 9 to 9.7 microns with similar performance. One example resonance (of many comparables) was found to reach 3648 at 9.601 µm. Fourier analysis of the many resonances of each device showed free spectral ranges slightly greater than 40 GHz, matching theoretical expectations for the microresonator diameter and the overlap of the whispering gallery mode with the diamond.
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13
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Zhou X, Tian Z, Kim HJ, Wang Y, Xu B, Pan R, Chang YJ, Di Z, Zhou P, Mei Y. Rolling up MoSe 2 Nanomembranes as a Sensitive Tubular Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1902528. [PMID: 31482646 DOI: 10.1002/smll.201902528] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2019] [Revised: 08/02/2019] [Indexed: 06/10/2023]
Abstract
Transition metal dichalcogenides, as a kind of 2D material, are suitable for near-infrared to visible photodetection owing to the bandgaps ranging from 1.0 to 2.0 eV. However, limited light absorption restricts photoresponsivity due to the ultrathin thickness of 2D materials. 3D tubular structures offer a solution to solve the problem because of the light trapping effect which can enhance optical absorption. In this work, thanks to mechanical flexibility of 2D materials, self-rolled-up technology is applied to build up a 3D tubular structure and a tubular photodetector is realized based on the rolled-up molybdenum diselenide microtube. The tubular device is shown to present one order higher photosensitivity compared with planar counterparts. Enhanced optical absorption arising from the multiple reflections inside the tube is the main reason for the increased photocurrent. This tubular device offers a new design for increasing the efficiency of transition metal dichalcogenide-based photodetection and could hold great potential in the field of 3D optoelectronics.
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Affiliation(s)
- Xuefei Zhou
- Department of Materials Science and State Key Laboratory of ASIC and system, Fudan University, Shanghai, 200433, P. R. China
| | - Ziao Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Hyuk Jin Kim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Yang Wang
- Department of Materials Science and State Key Laboratory of ASIC and system, Fudan University, Shanghai, 200433, P. R. China
| | - Borui Xu
- Department of Materials Science and State Key Laboratory of ASIC and system, Fudan University, Shanghai, 200433, P. R. China
| | - Ruobing Pan
- Department of Materials Science and State Key Laboratory of ASIC and system, Fudan University, Shanghai, 200433, P. R. China
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yongfeng Mei
- Department of Materials Science and State Key Laboratory of ASIC and system, Fudan University, Shanghai, 200433, P. R. China
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14
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Banerjee S, Mandal S, Dhar S, Roy AB, Mukherjee N. Nanomirror-Embedded Back Reflector Layer (BRL) for Advanced Light Management in Thin Silicon Solar Cells. Ind Eng Chem Res 2019. [DOI: 10.1021/acs.iecr.9b01719] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Sudarshana Banerjee
- Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India
| | - Sourav Mandal
- Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India
- Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Sukanta Dhar
- Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India
- Department of Electronics and Communication Engineering, National Institute of Technology Sikkim, Ravangla, South Sikkim 737139, India
| | - Arijit Bardhan Roy
- Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India
| | - Nillohit Mukherjee
- Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India
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15
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Lohof F, Steinhoff A, Florian M, Lorke M, Erben D, Jahnke F, Gies C. Prospects and Limitations of Transition Metal Dichalcogenide Laser Gain Materials. NANO LETTERS 2019; 19:210-217. [PMID: 30532981 DOI: 10.1021/acs.nanolett.8b03729] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum efficiency. We provide results from microscopic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with four commonly used TMD semiconductors. Our approach includes band-structure renormalizations due to excited carriers that trigger a direct-to-indirect band gap transition. As a consequence, we predict a rollover for the gain that limits the excitation regime where laser operation is possible. A parametrization of the peak gain is provided that is used in combination with a rate-equation theory to discuss consequences for experimentally accessible laser characteristics.
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Affiliation(s)
- F Lohof
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - A Steinhoff
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - M Florian
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - M Lorke
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - D Erben
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - F Jahnke
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - C Gies
- Institute for Theoretical Physics , University of Bremen , P.O. Box 330 440, 28334 Bremen , Germany
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16
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Gate-tunable frequency combs in graphene–nitride microresonators. Nature 2018; 558:410-414. [DOI: 10.1038/s41586-018-0216-x] [Citation(s) in RCA: 143] [Impact Index Per Article: 23.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2017] [Accepted: 03/19/2018] [Indexed: 12/24/2022]
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