Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride

Single-Photon Emission from Point Defects in Hexagonal Boron Nitride Induced by Plasma Treatment

Solid-state quantum emitters are gaining significant attention for many quantum information applications. Hexagonal boron nitride (h-BN) is an emerging host material for generating bright, stable, and tunable single-photon emission with narrow line widths at room temperature. In this work, we present a facile and efficient approach to generate high-density single-photon emitters (SPEs) in mechanically exfoliated h-BN through H- or Ar-plasma treatment followed by high-temperature annealing in air. It is notable that the postannealing is essential to suppress the fluorescence background in photoluminescence spectra and enhance emitter stability. These quantum emitters exhibit excellent optical properties, including high purity, brightness, stability, polarization degree, monochromaticity, and saturation intensity. The effects of process parameters on the quality of quantum emitters were systematic investigated. We find that there exists an optimal plasma power and h-BN thickness to achieve a high SPE density. This work offers a practical avenue for generating SPEs in h-BN and holds promise for future research and applications in quantum photonics.

Intracellular biocompatible hexagonal boron nitride quantum emitters as single-photon sources and barcodes

Color centers in hexagonal boron nitride (hBN) have been emerging as a multifunctional platform for various optical applications including quantum information processing, quantum computing and imaging. Simultaneously, due to its biocompatibility and biodegradability hBN is a promising material for biomedical applications. In this work, we demonstrate single-photon emission from hBN color centers embedded inside live cells and their application to cellular barcoding. The generation and internalization of multiple color centers into cells was performed via simple and scalable procedure while keeping the cells unharmed. The emission from live cells was observed as multiple diffraction-limited spots, which exhibited excellent single-photon characteristics with high single-photon purity of 0.1 and superb emission stability without photobleaching or spectral shifts over several hours. Due to different emission wavelengths and peak widths of the color centers, they were employed as barcodes. We term them Quantum Photonic Barcodes (QPBs). Each QPB can exist in one out of 470 possible distinguishable states and a combination of a few QPBs per cell can be used to uniquely tag virtually an unlimited number of cells. The barcodes developed here offer some excellent properties, including ease of production by a single-step procedure, biocompatibility and biodegradability, emission stability, no photobleaching, small size and a huge number of unique barcodes. This work provides a basis for the use of hBN color centers for robust barcoding of cells and due to the single photon emission, presented concepts could in future be extended to quantum-limited sensing and super-resolution imaging.

Photophysics and its application in photon upconversion

Photoluminescence (PL) upconversion is a phenomenon involving light-matter interaction, where the energy of the emitted photons is higher than that of the incident photons. PL upconversion has promising applications in optoelectronic devices, displays, photovoltaics, imaging, diagnosis and treatment. In this review, we summarize the mechanism of PL upconversion and ultrafast PL physical processes. In particular, we highlight the advances in laser cooling, biological imaging, volumetric displays and photonics.

Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials

Strain built-in electronic and optoelectronic devices can influence their properties and lifetime. This effect is particularly significant at the interface between two-dimensional materials and substrates. One such material is epitaxial hexagonal boron nitride (h-BN), which is grown at temperatures often exceeding 1000 °C. Due to the high growth temperature, h-BN based devices operating at room temperature can be strongly affected by strain generated during cooling due to the differences in lattice thermal expansion of h-BN and the substrate. Here, we present results of temperature-dependent Raman studies of the in-plane E2ghighphonon mode in the temperature range of 300-1100 K measured for h-BN grown by metalorganic vapor phase epitaxy. We observe a change, by an order of magnitude, in the rate of the temperature-induced frequency shift for temperatures below 900 K, indicating a strong reduction of the effective h-BN/substrate interaction. We attribute this behavior to the creation of h-BN wrinkles which results in strain relaxation. This interpretation is supported by the observation that no change of layer/substrate interaction and no wrinkles are observed for delaminated h-BN films transferred onto silicon. Our findings demonstrate that wrinkle formation is an inherent process for two-dimensional materials on foreign substrates that has to be understood to allow for the successful engineering of devices based on epitaxially grown van der Waals heterostructures.

Quantum systems in silicon carbide for sensing applications

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

Substrate Ferroelectric Proximity Effects Have a Strong Influence on Charge Carrier Lifetime in Black Phosphorus

By stacking monolayer black phosphorus (MBP) with nonpolarized and ferroelectric polarized bilayer hexagonal boron nitride (h-BN), we demonstrate that ferroelectric proximity effects have a strong influence on the charge carrier lifetime of MBP using nonadiabatic (NA) molecular dynamics simulations. Through enhancing the motion of phosphorus atoms, ferroelectric polarization enhances the overlap of electron-hole wave functions that improves NA coupling and decreases the bandgap, resulting in a rapid electron-hole recombination completing within a quarter of nanoseconds, which is two times shorter than that in nonpolarized stackings. In addition to the dominant in-plane Ag2 mode in free-standing MBP, the out-of-plane high-frequency Ag1 and low-frequency interlayer breathing modes presented in the heterojunctions drive the recombination. Notably, the resonance between the breathing mode within bilayer h-BN and the B1u mode of MBP provides an additional nonradiative channel in ferroelectric stackings, further accelerating charge recombination. These findings are crucial for charge dynamics manipulation in two-dimensional materials via substrate ferroelectric proximity effects.

Chemical Kinetics of Metal Single Atom and Nanocluster Formation on Surfaces: An Example of Pt on Hexagonal Boron Nitride

The production of atomically dispersed metal catalysts remains a significant challenge in the field of heterogeneous catalysis due to coexistence with continuously packed sites such as nanoclusters and nanoparticles. This work presents a comprehensive guidance on how to increase the degree of atomization through a selection of appropriate experimental conditions and supports. It is based on a rigorous macro-kinetic theory that captures relevant competing processes of nucleation and formation of single atoms stabilized by point defects. The effects of metal-support interactions and deposition parameters on the resulting single atom to nanocluster ratio as well as the role of metal centers formed on point defects in the kinetics of nucleation have been established, thus paving the way to guided synthesis of single atom catalysts. The predictions are supported by experimental results on sputter deposition of Pt on exfoliated hexagonal boron nitride, as imaged by aberration-corrected scanning transmission electron microscopy.

Phonon-assisted upconversion photoluminescence of monolayer MoS2 at elevated temperatures

Upconversion photoluminescence (UPL) lies at the heart of optical refrigeration and energy harvesting. Monolayer transition metal dichalcogenides (TMDCs) have been identified as an excellent platform with robust phonon-exciton coupling for studying the phonon-assisted UPL process. Herein, we investigate the multiphonon-assisted UPL emission in monolayer MoS2 at elevated temperatures and the temperature-dependent phonon contributions in the UPL process. When temperature goes up from 295 K to 460 K, the enhancement of the integrated UPL intensity is demonstrated due to the increased phonon population and the reduced phonon numbers involved in the UPL process. Our findings reveal the underlying mechanism of phonon-assisted UPL at high temperatures, and pave the way for the applications of photon upconversion in display, nanoscale thermometry, anti-Stokes energy harvesting, and optical refrigeration.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Comprehensive Scheme for Identifying Defects in Solid-State Quantum Systems

A solid-state quantum emitter is a crucial component for optical quantum technologies, ideally with a compatible wavelength for efficient coupling to other components in a quantum network. It is essential to understand fluorescent defects that lead to specific emitters. In this Letter, we employ density functional theory (DFT) to demonstrate the calculations of the complete optical fingerprints of quantum emitters in hexagonal boron nitride. Our results suggest that instead of comparing a single optical property, like the zero-phonon line energy, multiple properties should be used when comparing simulations to the experiment. Moreover, we apply this approach to predict the suitability of using the emitters in specific quantum applications. We therefore apply DFT calculations to identify quantum emitters with a lower risk of misassignments and a way to design optical quantum systems. Hence, we provide a recipe for classification and generation of universal quantum emitters in future hybrid quantum networks.

Organic Molecules as Origin of Visible-Range Single Photon Emission from Hexagonal Boron Nitride and Mica

The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candidate defect structures have been able to capture the great heterogeneity in emitter properties that is observed experimentally. Employing a widely used sample preparation protocol but disentangling several confounding factors, we demonstrate conclusively that heterogeneous single-photon emission at ∼2 eV associated with hBN originates from organic molecules, presumably aromatic fluorophores. The appearance of those SPEs depends critically on the presence of organic processing residues during sample preparation, and emitters formed during heat treatment are not located within the hBN crystal as previously thought, but at the hBN/substrate interface. We further demonstrate that the same class of SPEs can be observed in a different 2D insulator, fluorophlogopite mica.

Arsenene as a promising sensor for the detection of H2S: a first-principles study

To explore the feasibility of arsenene in detecting H₂S gas, we employ the density-functional theory to investigate the geometry, electronic structure and magnetic properties of defected and doped arsenene. Point defects do not appreciably improve the sensing performance of arsenene due to small adsorption energies and charge transfer. The doping of transition metals (Ti, V, Cr, Mn, Co and Ni) introduces magnetic moments and narrows the band gap of arsenene. Transition metal (TM) dopants can enhance the interaction between H₂S and a modified arsenene substrate. Adsorption energies and charge transfers increase significantly, and the adsorption converts to chemisorption. After adsorption, the Ti and Cr-doped system's band gap change is twice that of the pristine and defective arsenene. The adsorption of H₂S changes the system properties of two TM-doped arsenenes: Ti-doped arsenene transforms from semiconductor to half-metal, and Ni-doped arsenene transforms from half-metal to conductor. Electrical signals can be observed in this process to detect H₂S molecules. Our calculations show that doping improves the detecting performance of arsenene to H₂S molecules more efficiently than defects. Our results indicate that arsenene has a promising future in developing H₂S gas sensors.

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm^-1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.

Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O₂/Ar/H₂ plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices.

Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride

Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser. Our use of a single pulse per defect pattern minimized heat-related damages and improved the purity of SPEs compared with the previous laser-based approaches. Under the optimized fabrication and post-treatment conditions, SPE arrays were successfully generated from the 3.0 μm defect patterns with 43% yield, the highest among the 2D-based top-down approaches. Importantly, we found that 100% of the bright defect patterns are SPEs with g²(0) < 0.5 under such conditions, with the lowest g²(0) = 0.06 ± 0.03. Our SPEs also exhibit the highest brightness with the saturation SPE rate at 7.15 million counts per second. We believe that our overall high-quality and large-scale approach will help a wide range of applications of SPEs in on-chip quantum technologies.

Manipulation of Band Alignment in Two-Dimensional Vertical WSe2/BA2PbI4 Ruddlesden-Popper Perovskite Heterojunctions via Defect Engineering

Transition metal dichalcogenides (TMDs), two-dimensional (2D) layered Ruddlesden-Popper perovskite material, and their heterojunctions have attracted a great deal of interest in optoelectronic applications. Although various approaches for modulating their properties and applications have been demonstrated, knowledge of the interface band alignment and defect engineering on the TMD/2D perovskite heterojunction is still lacking. Herein, the optoelectronic properties and defect engineering of the WSe₂/BA₂PbI₄ heterojunction have been investigated with density functional theory simulations. We find that the WSe₂/BA₂PbI₄ van der Waals heterojunction maintains an indirect bandgap and S-scheme alignment, facilitating the efficient splitting of light excited carriers across the interface. Importantly, we find that defect engineering could manipulate the band alignment. The introduction of the BA vacancies could switch the interface from the S-scheme to the typical type II interface, whereas Se vacancies would facilitate recombination at the S-scheme interface. Our work proves that the interfacial properties of heterojunctions can be regulated by defect modulation to address different optoelectronic applications.

Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates

Two-dimensional hexagonal boron nitride (hBN) that hosts room-temperature single-photon emitters (SPEs) is promising for quantum information applications. An important step toward the practical application of hBN is the on-demand, position-controlled generation of SPEs. Strategies reported for deterministic creation of hBN SPEs either rely on substrate nanopatterning that is not compatible with integrated photonics or utilize radiation sources that might introduce unpredictable damage or contamination to hBN. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with atomic force microscopy (AFM). The method applies to hBN flakes on flat silicon dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPE yields are above 30% for multiple indent sizes, and a maximum yield of 36% is demonstrated for indents around 400 nm. Our results mark an important step toward the deterministic creation and integration of hBN SPEs with photonic and plasmonic devices.

Advanced Inorganic Nitride Nanomaterials for Renewable Energy: A Mini Review of Synthesis Methods

Inorganic nitride nanomaterials have attracted widespread attention for applications in renewable energy due to novel electrochemical activities and high chemical stabilities. For different renewable energy applications, there are many possibilities and uncertainties about the optimal nitride phases and nanostructures, which further promotes the exploration of controllable preparation of nitride nanomaterials. Moreover, unlike conventional nitrides with bulk or ceramic structures, the synthesis of nitride nanomaterials needs more accurate control to guarantee the target nanostructure along with the phase purity, which make the whole synthesis still a challenge to achieve. In this mini review, we mainly summarize the synthesis methods for inorganic nitride nanomaterials, including chemistry vapor deposition, self-propagation high-temperature synthesis, solid state metathesis reactions, solvothermal synthesis, etc. From the perspective of nanostructure, several novel nitrides, with nanostructures like nanoporous, two-dimensional, defects, ternary structures, and quantum dots, are showing unique properties and getting extensive attentions, recently. Prospects of future research in design and synthesis of functional inorganic nitrides are also discussed.

Upconversion Photovoltaic Effect of WS2/2D Perovskite Heterostructures by Two-Photon Absorption

Photovoltaic devices work by converting sunlight energy into electric energy. The efficiency of current photovoltaic devices, however, is significantly limited by the transmission loss of photons with energies below the bandgap of channel semiconductors, which can be circumvented by photon energy upconversion. Energy upconversion has been widely employed to improve the efficiency of traditional solar cells. However, the employment of energy upconversion in two-dimensional (2D) heterostructure photovoltaic devices has not been investigated yet. Here, we report the upconversion photovoltaic effect of WS₂ monolayer/(C₆H₅C₂H₄NH₃)₂PbI₄ (PEPI) 2D perovskite heterostructures by below-bandgap two-photon absorption via a virtual intermediate state. An open circuit voltage of 0.37 V and short circuit current of 7.4 pA are obtained with a photoresponsivity of 771 pA/W and current on/off ratio of 130:1. This work demonstrates that upconversion by two-photon absorption may potentially be a strategy for boosting the efficiency of 2D material-based photovoltaic devices by virtue of the absorption of photons below the bandgap energy of channel semiconductors.

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.

Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.

Photoluminescence upconversion of 2D materials and applications

Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.

Role of defects and grain boundaries in the thermal response of wafer-scale hBN films

With more widespread applications of nanotechnology, heat dissipation in nanoscale devices is becoming a critical issue. We study the thermal response of wafer-scale hexagonal boron nitride (hBN) layers, which find potential applications as ideal substrates in two dimensional devices. Sapphire-supported thin hBN films, 2'' in size and of different thicknesses, were grown using metalorganic vapour phase epitaxy. These large-scale films exhibit wrinkles defects and grain boundaries over their entire area. The shift of [Formula: see text] phonon mode with temperature is analysed by considering the cumulative contribution of anharmonic phonon decay along with lattice thermal expansion, defect, and strain modulation. The study demonstrates that during heat treatment the strain evolution plays a dominating role in governing the characteristics of the wrinkled thinner films. Interestingly we find that both defects and strain determine the spectral line-width of these wafer-scale films. To the end, from Raman line-width, the changes in phonon lifetime in delaminated and as-grown films is estimated. The results suggest the possibility of a reduction in thermal transport in these wafer-scale films compared to their bulk counterpart.

Electron beam triggered single-atom dynamics in two-dimensional materials

Controlling atomic structure and dynamics with single-atom precision is the ultimate goal in nanoscience and nanotechnology. Despite great successes being achieved by scanning tunneling microscopy (STM) over the past a few decades, fundamental limitations, such as ultralow temperature, and low throughput, significantly hinder the fabrication of a large array of atomically defined structures by STM. The advent of aberration correction in scanning transmission electron microscopy (STEM) revolutionized the field of nanomaterials characterization pushing the detection limit down to single-atom sensitivity. The sub-angstrom focused electron beam (e-beam) of STEM is capable of interacting with an individual atom, thereby it is the ideal platform to direct and control matter at the level of a single atom or a small cluster. In this article, we discuss the transfer of energy and momentum from the incident e-beam to atoms and their subsequent potential dynamics under different e-beam conditions in 2D materials, particularly transition metal dichalcogenides (TMDs). Next, we systematically discuss the e-beam triggered structural evolutions of atomic defects, line defects, grain boundaries, and stacking faults in a few representative 2D materials. Their formation mechanisms, kinetic paths, and practical applications are comprehensively discussed. We show that desired structural evolution or atom-by-atom assembly can be precisely manipulated by e-beam irradiation which could introduce intriguing functionalities to 2D materials. In particular, we highlight the recent progress on controlling single Si atom migration in real-time on monolayer graphene along an extended path with high throughput in automated STEM. These results unprecedentedly demonstrate that single-atom dynamics can be realized by an atomically focused e-beam. With the burgeoning of artificial intelligence and big data, we can expect that fully automated microscopes with real-time data analysis and feedback could readily design and fabricate large scale nanostructures with unique functionalities in the near future.

Quantum Information and Algorithms for Correlated Quantum Matter

Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.

Electro-Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

Ultrafast interlayer charge transfer is one of the most distinct features of van der Waals (vdW) heterostructures. Its dynamics competes with carrier thermalization such that the energy of nonthermalized photocarriers may be harnessed by band engineering. In this study, nonthermalized photocarrier energy is harnessed to achieve near-infrared (NIR) to visible light upconversion in a metal-insulator-semiconductor (MIS) vdW heterostructure tunnel diode consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS₂ ). Photoexcitation of the electrically biased heterostructure with 1.58 eV NIR laser in the linear absorption regime generates emission from the ground exciton state of WS₂ , which corresponds to upconversion by ≈370 meV. The upconversion is realized by electrically assisted interlayer transfer of nonthermalized photoexcited holes from FLG to WS₂ , followed by formation and radiative recombination of excitons in WS₂ . The photocarrier transfer rate can be described by Fowler-Nordheim tunneling mechanism and is electrically tunable by two orders of magnitude by tuning voltage bias applied to the device. This study highlights the prospects for realizing novel electro-optic upconversion devices by exploiting electrically tunable nonthermalized photocarrier relaxation dynamics in vdW heterostructures.

Direct observation of water-mediated single-proton transport between hBN surface defects

Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signalling, to catalysis and membrane science. However, due to their light mass, small size and high chemical reactivity, uncovering the surface transport of single protons at room temperature and in an aqueous environment has so far remained out-of-reach of conventional atomic-scale surface science techniques, such as scanning tunnelling microscopy. Here, we use single-molecule localization microscopy to resolve optically the transport of individual excess protons at the interface of hexagonal boron nitride crystals and aqueous solutions at room temperature. Single excess proton trajectories are revealed by the successive protonation and activation of optically active defects at the surface of the crystal. Our observations demonstrate, at the single-molecule scale, that the solid/water interface provides a preferential pathway for lateral proton transport, with broad implications for molecular charge transport at liquid interfaces.

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin-photon interface

Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin-photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.

Single-photon emitters in hexagonal boron nitride: a review of progress

This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

Properties of intrinsic point defects and dimers in hexagonal boron nitride

Hexagonal boron nitride (hBN) is a wide gap 2D layered material with good insulating properties. Intrinsic point defects in hBN play an important role in its applications as a dielectric in 2D electronic devices. However, the electronic properties of these defects are still poorly understood. We have calculated the structure and properties of a wide range of intrinsic point defects in the bulk of hBN using hybrid density functional theory (DFT). These include vacancies and interstitial states of B and N as well as di- and tri-vacancies. For each isolated defect, multiple charge states are calculated, and for each charge state multiple spin states are investigated. Positions of defect charge transition levels in the band gap of hBN are calculated. In particular, we predict that B vacancies are likely to be negatively charged in contact with graphene and other metals. Calculations of the interaction between vacancies predict that divacancies in both B and N sublattices are strongly binding. Moreover, the interaction of single B and N vacancies in adjacent layers induces the creation of -N-N- and -B-B- molecular bridges, which greatly distort the local structure, leading to local bond weakening. These results provide further insight into the properties of defects which can be responsible for degradation of hBN based devices.

Phototherapy with layered materials derived quantum dots

Quantum dots (QDs) originating from two-dimensional (2D) sheets of graphitic carbon nitride (g-C₃N₄), graphene, hexagonal boron nitride (h-BN), monoatomic buckled crystals (phosphorene), germanene, silicene and transition metal dichalcogenides (TMDCs) are emerging zero-dimensional materials. These QDs possess diverse optical properties, are chemically stable, have surprisingly excellent biocompatibility and are relatively amenable to surface modifications. It is therefore not difficult to see that these QDs have potential in a variety of bioapplications, including biosensing, bioimaging and anticancer and antimicrobial therapy. In this review, we briefly summarize the recent progress of these exciting QD based nanoagents and strategies for phototherapy. In addition, we will discuss about the current limitations, challenges and future prospects of QDs in biomedical applications.

High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors

Photodetectors usually operate in the wavelength range with photon energy above the bandgap of channel semiconductors so that incident photons can excite electrons from valence band to conduction band to generate photocurrent. Here, however, we show that monolayer WS₂ photodetectors can detect photons with energy even lying 219 meV below the bandgap of WS₂ at room temperature. With the increase of excitation wavelength from 620 to 680 nm, photoresponsivity varies from 551 to 59 mA/W. This anomalous phenomenon is ascribed to energy upconversion, which is a combination effect of one-photon excitation and multiphonon absorption through an intermediate state created most likely by sulfur divacancy with oxygen adsorption. These findings will arouse research interests on other upconversion optoelectronic devices, photovoltaic devices, for example, of monolayer transition metal dichalcogenides (TMDCs).

Thermally enhanced NIR-NIR anti-Stokes emission in rare earth doped nanocrystals

Nanoparticles with anti-Stokes emissions have enabled many sensing applications, but their efficiencies are considerably low. The key to enable the process of anti-Stokes emissions is to create phonons that assist the excited photons to be pumped from a lower energy state onto a higher one. Increasing the temperature will generate more phonons, but it unavoidably quenches the luminescence. Here by quantifying the number of phonons being generated from the host crystal and those at the surface of Yb³⁺/Nd³⁺ co-doped nanoparticles, we systematically investigated mechanisms towards the large enhancements of the phonon-assisted anti-Stokes emissions from 980 nm to 750 nm and 803 nm. Moreover, we provided direct evidence that moisture release from the nanoparticle surface at high temperature was not the main reason. We further demonstrated that the brightness of 10 nm nanoparticles was enhanced by more than two orders of magnitude, in stark contrast to the thermal quenching effect.

Anti-Stokes excitation of solid-state quantum emitters for nanoscale thermometry

Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light-emitting diodes, and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, we explore the opposite anti-Stokes process, where excitation is performed with lower-energy photons. We report that the process is sufficiently efficient to excite even a single quantum system-namely, the germanium-vacancy center in diamond. Consequently, we leverage the temperature-dependent, phonon-assisted mechanism to realize an all-optical nanoscale thermometry scheme that outperforms any homologous optical method used to date. Our results frame a promising approach for exploring fundamental light-matter interactions in isolated quantum systems and harness it toward the realization of practical nanoscale thermometry and sensing.

Single Photon Sources in Atomically Thin Materials

Layered materials are very attractive for studies of light-matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.