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Chen C, Yin Y, Zhang R, Yuan Q, Xu Y, Zhang Y, Chen J, Zhang Y, Li C, Wang J, Li J, Fei L, Yu Q, Zhou Z, Zhang H, Cheng R, Dong Z, Xu X, Pan A, Zhang K, He J. Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release. NATURE MATERIALS 2023:10.1038/s41563-023-01516-1. [PMID: 36959500 DOI: 10.1038/s41563-023-01516-1] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 02/24/2023] [Indexed: 05/04/2023]
Abstract
Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to ~6,500 cm2 V-1 s-1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.
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Affiliation(s)
- Cheng Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Yuling Yin
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Rencong Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghong Yuan
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
- State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Engineering, National University of Defense Technology, Hefei, China
| | - Jie Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yan Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Chang Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Jie Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, China
| | - Qiang Yu
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zheng Zhou
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Zhuo Dong
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
| | - Kai Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
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Improvements in 2D p-type WSe 2 transistors towards ultimate CMOS scaling. Sci Rep 2023; 13:3304. [PMID: 36849724 PMCID: PMC9971212 DOI: 10.1038/s41598-023-30317-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/21/2023] [Indexed: 03/01/2023] Open
Abstract
This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal-oxide-semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe2) with high-k metal gate (HKMG) stacks. Our analysis shows that standard metallization techniques (e.g., e-beam evaporation at moderate pressure ~ 10-5 torr) results in significant Fermi-level pinning, but Schottky barrier heights (SBH) remain small (< 100 meV) when using high work function metals (e.g., Pt or Pd). Temperature-dependent analysis uncovers a more dominant contribution to contact resistance from the channel access region and confirms significant improvement through less damaging metallization techniques (i.e., reduced scattering) combined with strongly scaled HKMG stacks (enhanced carrier density). A clean contact/channel interface is achieved through high-vacuum evaporation and temperature-controlled stepped deposition providing large improvements in contact resistance. Our study reports low contact resistance of 5.7 kΩ-µm, with on-state currents of ~ 97 µA/µm and subthreshold swing of ~ 140 mV/dec in FETs with channel lengths of 400 nm. Furthermore, theoretical analysis using a Landauer transport ballistic model for WSe2 SB-FETs elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance (excellent on-state current vs subthreshold swing benchmarks) towards the ultimate CMOS scaling limit.
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Xie J, Patoary NM, Zhou G, Sayyad MY, Tongay S, Esqueda IS. Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS 2field-effect-transistors. NANOTECHNOLOGY 2022; 33:225702. [PMID: 35172287 DOI: 10.1088/1361-6528/ac55d2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 02/16/2022] [Indexed: 06/14/2023]
Abstract
Chemical vapor deposition (CVD)-grown monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation integrated electronic systems due to its capability of high-throughput synthesis and compatibility with wafer-scale fabrication. Several studies have described the importance of Schottky barriers in analyzing the transport properties and electrical characteristics of MoS2field-effect-transistors (FETs) with metal contacts. However, the analysis is typically limited to single devices constructed from exfoliated flakes and should be verified for large-area fabrication methods. In this paper, CVD-grown ML MoS2was utilized to fabricate large-area (1 cm × 1 cm) FET arrays. Two different types of metal contacts (i.e. Cr/Au and Ti/Au) were used to analyze the temperature-dependent electrical characteristics of ML MoS2FETs and their corresponding Schottky barrier characteristics. Statistical analysis provides new insight about the properties of metal contacts on CVD-grown MoS2compared to exfoliated samples. Reduced Schottky barrier heights (SBH) are obtained compared to exfoliated flakes, attributed to a defect-induced enhancement in metallization of CVD-grown samples. Moreover, the dependence of SBH on metal work function indicates a reduction in Fermi level pinning compared to exfoliated flakes, moving towards the Schottky-Mott limit. Optical characterization reveals higher defect concentrations in CVD-grown samples supporting a defect-induced metallization enhancement effect consistent with the electrical SBH experiments.
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Affiliation(s)
- Jing Xie
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, United States of America
| | - Naim Md Patoary
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, United States of America
| | - Guantong Zhou
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, United States of America
| | - Mohammed Yasir Sayyad
- School for Engineering of Matter, Transport & Energy, Arizona State University, Tempe, AZ, 85281, United States of America
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport & Energy, Arizona State University, Tempe, AZ, 85281, United States of America
| | - Ivan Sanchez Esqueda
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, United States of America
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Liu C, Ye Z, Wei X, Mao S. Recent advances in field‐effect transistor sensing strategies for fast and highly efficient analysis of heavy metal ions. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100137] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022] Open
Affiliation(s)
- Chengbin Liu
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Ziwei Ye
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Xiaojie Wei
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Shun Mao
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
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Wu F, Tian H, Yan Z, Ren J, Hirtz T, Gou G, Shen Y, Yang Y, Ren TL. Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26161-26169. [PMID: 34032407 DOI: 10.1021/acsami.1c03959] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.
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Affiliation(s)
- Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Zhaoyi Yan
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jie Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Thomas Hirtz
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Guangyang Gou
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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Recent insights into the robustness of two-dimensional black phosphorous in optoelectronic applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS 2020. [DOI: 10.1016/j.jphotochemrev.2020.100354] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
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Zhou W, Chen J, Bai P, Guo S, Zhang S, Song X, Tao L, Zeng H. Two-Dimensional Pnictogen for Field-Effect Transistors. RESEARCH 2020; 2019:1046329. [PMID: 31912022 PMCID: PMC6944228 DOI: 10.34133/2019/1046329] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2019] [Accepted: 09/07/2019] [Indexed: 11/06/2022]
Abstract
Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.
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Affiliation(s)
- Wenhan Zhou
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiayi Chen
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Pengxiang Bai
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shiying Guo
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiufeng Song
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Li Tao
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Haibo Zeng
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Thurakkal S, Zhang X. Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902359. [PMID: 31993294 PMCID: PMC6974947 DOI: 10.1002/advs.201902359] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 10/10/2019] [Indexed: 05/25/2023]
Abstract
Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.
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Affiliation(s)
- Shameel Thurakkal
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
| | - Xiaoyan Zhang
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
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Xia Y, Li G, Jiang B, Yang Z, Liu X, Xiao X, Flandre D, Wang C, Liu Y, Liao L. Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime. NANOSCALE 2019; 11:10420-10428. [PMID: 31112194 DOI: 10.1039/c9nr02907a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With continuous device scaling, avalanche breakdown in two-dimensional (2D) transistors severely degrades device output characteristics and overall reliability. It is highly desirable to understand the origin of such electrical breakdown for exploring high-performance 2D transistors. Here, we report an anomalous increase in the drain currents of black phosphorus (BP)-based transistors operating in the saturation regime. Through the comprehensive investigation of various channel thicknesses, channel lengths and operating temperatures, such novel behavior is attributed to the kink effect originating from impact ionization and the related potential shift inside the channel, which is further confirmed by device numerical simulations. Furthermore, nitrogen plasma treatment is carried out to eliminate the current anomalous increase and suppress the kink effect with improved saturation current. This work not only sheds light on the understanding of carrier transport within BP transistors, but also could open up a new avenue for achieving high-performance and reliable electronic devices based on 2D materials.
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Affiliation(s)
- Ying Xia
- School of Physics and Technology, Wuhan University, Wuhan 430072, China.
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