Monolayer MoS2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals

Confinement of monolayers into quasi-1D atomically thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene is limited to bottom-up synthesis or lithographic patterning. In this study, a versatile and direct approach is introduced to exfoliate bulk van der Waals crystals as nanoribbons. Akin to the Scotch tape exfoliation method for producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are predominantly monolayer, single-crystalline, parallel-aligned, flat, and exhibit high aspect ratios. The role of confinement, strain, and edge configuration of these nanoribbons is observed in their electrical, magnetic, and optical properties. This versatile exfoliation technique provides a universal route for producing a variety of nanoribbon materials and supports the study of their fundamental properties and potential applications.

Edge-Passivated Monolayer WSe2 Nanoribbon Transistors

The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field-effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achieved using nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated-edge nanoribbon FETs exhibit 10 ± 6 times higher field-effect mobility than the open-edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation-based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond-silicon electronics and optoelectronics.

Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.

Selectively Confined Black Phosphorus Nanowires in Carbon Nanotubes

Nanoconfinement of low-dimensional materials opens up a new territory for tailoring material hybridization to produce novel geometric structures for applications in electronics, catalysis, and photonics. Despite the progress made in the encapsulation of 2D materials, exploration of their definite crystal structures into lower-dimensional nanomaterials is still largely unexplored. Herein, one-dimensional black phosphorus (BP) nanowires with an aspect ratio of over 100 produced by confining BP into the CNT (conf-BP@CNT) are reported. Notably, the unique structure and dimensions of BP were determined by confinement within the CNT and were accurately characterized by crystallography. During the spatially confined growth, the defects and capillarity effect of the CNT promote nucleation and growth of BP within the CNT. conf-BP@CNT shows surface charge localization of conf-BP and protection rendered by the CNT shell, giving rise to more efficient and stable photocatalytic rhodamine B (RhB) degradation than the bare exfoliated BP nanosheets. These results demonstrate the effectiveness of nanoconfinement in producing nanomaterials with controllable dimensions, precise spatial arrangement, and unique structures.

Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires

Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long W_xO_y nanowires and grew monolayer WS₂ nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS₂ nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from W_xO_y nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.

Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching

Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O₂ etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS₂. We also successfully applied this process for synthesizing WS₂, MoSe₂, and WSe₂ nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS₂, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.

Nanomechanical Sensing Using Heater-Integrated Fluidic Resonators

Micro/nanochannel resonators have been used to measure cells, suspended nanoparticles, or liquids, primarily at or near room temperature while their high temperature operation can offer promising applications such as calorimetric measurements and thermogravimetric analysis. To date, global electrothermal or local photothermal heating mechanisms have been attempted for channel resonators, but both approaches are intrinsically limited by a narrow temperature modulation range, slow heating/cooling, less quantitative heating, or time-consuming optical alignment. Here, we introduce heater-integrated fluidic resonators (HFRs) that enable fast, quantitative, alignment-free, and wide-range temperature modulation and simultaneously offer resistive thermometry and resonant densitometry. HFRs with or without a dispensing nozzle are fabricated, thoroughly characterized, and used for high throughput thermophysical properties measurements, microchannel boiling studies, and atomized spray dispensing. The HFR, without a doubt, opens a new avenue for nanoscale thermal analysis and processing and further encourages the integration of additional functions into channel resonators.

Natural p-n Junctions at the MoS2 Flake Edges

Two-dimensional (2D) semiconductors are holding promises as channel materials for field-effect transistors. Compared to traditional three-dimensional (3D) semiconductors whose electronic and optical properties are hindered by dangling bonds and trap states at the surfaces, 2D materials with saturated chemical bonds on the surface maintain the excellent properties even when device thickness scales down to monolayer. However, dangling bonds are unavoidable at their edges, which are often overlooked and should have important effects on the devices. Here, we show that the edges of as-exfoliated and etched MoS₂ are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. While their existence could present challenges for the shrinkage of devices, they can be exploited to form rectifying or optoelectronic devices based on a single flake of MoS₂ without the need of an elaborate extrinsic doping process.

Ultrasensitive and Selective Field-Effect Transistor-Based Biosensor Created by Rings of MoS2 Nanopores

The ubiquitous field-effect transistor (FET) is widely used in modern digital integrated circuits, computers, communications, sensors, and other applications. However, reliable biological FET (bio-FET) is not available in real life due to the rigorous requirement for highly sensitive and selective bio-FET fabrication, which remains a challenging task. Here, we report an ultrasensitive and selective bio-FET created by the nanorings of molybdenum disulfide (MoS₂) nanopores inspired by nuclear pore complexes. We characterize the nanoring of MoS₂ nanopores by scanning transmission electron microscopy, Raman, and X-ray photoelectron spectroscopy spectra. After fabricating MoS₂ nanopore rings-based bio-FET, we confirm edge-selective functionalization by the gold nanoparticle tethering test and the change of electrical signal of the bio-FET. Ultrahigh sensitivity of the MoS₂ nanopore edge rings-based bio-FET (limit of detection of 1 ag/mL) and high selectivity are accomplished by effective coupling of the aptamers on the nanorings of the MoS₂ nanopore edge for cortisol detection. We believe that MoS₂ nanopore edge rings-based bio-FET would provide platforms for everyday biosensors with ultrahigh sensitivity and selectivity.

Quantitative Mapping of Unmodulated Temperature Fields with Nanometer Resolution

Quantitative mapping of temperature fields with nanometric resolution is critical in various areas of scientific research and emerging technology, such as nanoelectronics, surface chemistry, plasmonic devices, and quantum systems. A key challenge in achieving quantitative thermal imaging with scanning thermal microscopy (SThM) is the lack of knowledge of the tip-sample thermal resistance (R_TS), which varies with local topography and is critical for quantifying the sample temperature. Recent advances in SThM have enabled simultaneous quantification of R_TS and topography in situations where the temperature field is modulated enabling quantitative thermometry even when topographical features cause significant variations in R_TS. However, such an approach is not applicable to situations where the temperature modulation of the device is not readily possible. Here we show, using custom-fabricated scanning thermal probes (STPs) with a sharp tip (radius ∼25 nm) and an integrated heater/thermometer, that one can quantitatively map unmodulated temperature fields, in a single scan, with ∼7 nm spatial resolution and ∼50 mK temperature resolution in a bandwidth of 1 Hz. This is accomplished by introducing a modulated heat input to the STP and measuring the AC and DC responses of the probe's temperature which allow for simultaneous mapping of the tip-sample thermal resistance and sample surface temperature. The approach presented here─contact resistance resolved scanning thermal microscopy (CR-SThM)─can greatly facilitate temperature mapping of a variety of microdevices under practical operating conditions.

Nickel particle-enabled width-controlled growth of bilayer molybdenum disulfide nanoribbons

Transition metal dichalcogenides exhibit a variety of electronic behaviors depending on the number of layers and width. Therefore, developing facile methods for their controllable synthesis is of central importance. We found that nickel nanoparticles promote both heterogeneous nucleation of the first layer of molybdenum disulfide and simultaneously catalyzes homoepitaxial tip growth of a second layer via a vapor-liquid-solid (VLS) mechanism, resulting in bilayer nanoribbons with width controlled by the nanoparticle diameter. Simulations further confirm the VLS growth mechanism toward nanoribbons and its orders of magnitude higher growth speed compared to the conventional noncatalytic growth of flakes. Width-dependent Coulomb blockade oscillation observed in the transfer characteristics of the nanoribbons at temperatures up to 60 K evidences the value of this proposed synthesis strategy for future nanoelectronics.

Exploiting rotational asymmetry for sub-50 nm mechanical nanocalligraphy

Nanofabrication has experienced extraordinary progress in the area of lithography-led processes over the last decades, although versatile and adaptable techniques addressing a wide spectrum of materials are still nascent. Scanning probe lithography (SPL) offers the capability to readily pattern sub-100 nm structures on many surfaces; however, the technique does not scale to dense and multi-lengthscale structures. Here, we demonstrate a technique, which we term nanocalligraphy scanning probe lithography (nc-SPL), that overcomes these limitations. Nc-SPL employs an asymmetric tip and exploits its rotational asymmetry to generate structures spanning the micron to nanometer lengthscales through real-time linewidth tuning. Using specialized tip geometries and by precisely controlling the patterning direction, we demonstrate sub-50 nm patterns while simultaneously improving on throughput, tip longevity, and reliability compared to conventional SPL. We further show that nc-SPL can be employed in both positive and negative tone patterning modes, in contrast to conventional SPL. This underlines the potential of this technique for processing sensitive surfaces such as 2D materials, which are prone to tip-induced shear or beam-induced damage.

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.

The unique carrier mobility of monolayer Janus MoSSe nanoribbons: a first-principles study

Charge-carrier mobility is a determining factor of the transport properties of semiconductor materials and is strongly related to the optoelectronic performance of nanoscale devices. Here, we investigate the electronic properties and charge carrier mobility of monolayer Janus MoSSe nanoribbons by means of first-principles simulations coupled with deformation potential theory. These simulations indicate that zigzag nanoribbons are metallic. Conversely, armchair nanoribbons are semiconducting and show oscillations in the calculated band gap as a function of edge-width according to the 3p < 3p + 1 < 3p + 2 rule, with p being the integer number of repeat units along the non-periodic direction of the nanoribbon. Although the charge-carrier mobility of armchair nanoribbons oscillates with the edge-width, its magnitude is comparable to its two-dimensional sheet counterpart. A robust room-temperature carrier mobility is calculated for 3.5 nm armchair nanoribbons with values ranging from 50 cm2 V-1 s-1 to 250 cm2 V-1 s-1 for electrons (e) and holes (h), respectively. A comparison of these values with the results for periodic flat sheet (e: 73.8 cm2 V-1 s-1; h: 157.2 cm2 V-1 s-1) reveals enhanced (suppressed) hole (electron) mobility in the Janus MoSSe nanoribbons. This is in contrast to what was previously found for MoS2 nanoribbons, namely larger mobility for electrons in comparison with holes. These differences are rationalized on the basis of the different structures, edge electronic states and deformation potentials present in the MoSSe nanoribbons. The present results provide the guidelines for the structural and electronic engineering of MoSSe nanoribbon edges towards tailored electron transport properties.

Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3

The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In₂Se₃). We use a scanning laser probe to locally convert In₂Se₃ into In₂O₃, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In₂Se₃-In₂O₃-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities.

Direct electron-beam patterning of monolayer MoS2 with ice

Two-dimensional transition metal dichalcogenides (TMDCs) are considered strong competitors for next generation semiconductor materials. In this paper, we propose direct electron-beam patterning of monolayer MoS2 inspired by an emerging ice lithography technique. Compared to conventional resist-based nanofabrication, ice-assisted patterning is free of contaminations from polymer resist and allows in situ processing of MoS2. The effects of electron beam dose and energy are investigated and nanoribbons with width below 30 nm are attainable. This method is expected to be applicable also to other TMDCs, providing a promising alternative for nanofabrication of 2D material devices.

Significant acceleration of Fe2+/ peroxydisulfate oxidation towards sulfisoxazole by addition of MoS2

Activation of peroxydisulfate (PDS) by Fe²⁺ has been considered as an effective activation method to generate reactive oxygen species (ROS). However, the process is limited for the low production yield of ROS owing to the inefficient Fe³⁺/Fe²⁺ cycle. Herein, we demonstrated that Fe²⁺/PDS system in the presence of molybdenum sulfide (MoS₂) was significantly efficient for the degradation of sulfisoxazole (SIX). As a co-catalyst in the Fe²⁺/PDS system, MoS₂ could greatly enhance the Fe³⁺/Fe²⁺ cycle by the exposed Mo⁴⁺ active sites, which could also improve the PDS decomposition efficiency. As a result, the degradation efficiency of SIX in the MoS₂/Fe²⁺/PDS system could reach to as high as 97.1% within 40 min, which was in distinct comparison with the 45.5% achieved by Fe²⁺/PDS system without MoS₂. Besides, effects of various reaction conditions on SIX degradation were also evaluated during the experiments, including the dosages of MoS₂, Fe²⁺, PDS and initial solution pH and the coexisting inorganic anions. In addition, both of sulfate radicals and hydroxyl radicals were identified as the dominant active species for SIX degradation by the radical scavenging experiments and verified by electron paramagnetic resonance (EPR). This study provides a promising idea for the degradation of organic contaminants in water treatment based on Fe²⁺/PDS process.

Thermomechanical Nanocutting of 2D Materials

Atomically thin materials, such as graphene and transition metal dichalcogenides, are promising candidates for future applications in micro/nanodevices and systems. For most applications, functional nanostructures have to be patterned by lithography. Developing lithography techniques for 2D materials is essential for system integration and wafer-scale manufacturing. Here, a thermomechanical indentation technique is demonstrated, which allows for the direct cutting of 2D materials using a heated scanning nanotip. Arbitrarily shaped cuts with a resolution of 20 nm are obtained in monolayer 2D materials, i.e., molybdenum ditelluride (MoTe₂ ), molybdenum disulfide (MoS₂ ), and molybdenum diselenide (MoSe₂ ), by thermomechanically cleaving the chemical bonds and by rapid sublimation of the polymer layer underneath the 2D material layer. Several micro/nanoribbon structures are fabricated and electrically characterized to demonstrate the process for device fabrication. The proposed direct nanocutting technique allows for precisely tailoring nanostructures of 2D materials with foreseen applications in the fabrication of electronic and photonic nanodevices.

Optical Patterning of Two-Dimensional Materials

Recent advances in the field of two-dimensional (2D) materials have led to new electronic and photonic devices enabled by their unique properties at atomic thickness. Structuring 2D materials into desired patterns on substrates is often an essential and foremost step for the optimum performance of the functional devices. In this regard, optical patterning of 2D materials has received enormous interest due to its advantages of high-throughput, site-specific, and on-demand fabrication. Recent years have witnessed scientific reports of a variety of optical techniques applicable to patterning 2D materials. In this minireview, we present the state-of-the-art optical patterning of 2D materials, including laser thinning, doping, phase transition, oxidation, and ablation. Several applications based on optically patterned 2D materials will be discussed as well. With further developments, optical patterning is expected to hold the key in pushing the frontiers of manufacturing and applications of 2D materials.

Thermal scanning probe lithography-a review

Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with many unique properties which enable original or improved nano-patterning in application fields ranging from quantum technologies to material science. In particular, ultrafast and highly localized thermal processing of surfaces can be achieved through the sharp heated tip in t-SPL to generate high-resolution patterns. We investigate t-SPL as a means of generating three types of material interaction: removal, conversion, and addition. Each of these categories is illustrated with process parameters and application examples, as well as their respective opportunities and challenges. Our intention is to provide a knowledge base of t-SPL capabilities and current limitations and to guide nanoengineers to the best-fitting approach of t-SPL for their challenges in nanofabrication or material science. Many potential applications of nanoscale modifications with thermal probes still wait to be explored, in particular when one can utilize the inherently ultrahigh heating and cooling rates.

Spatially Controlled Fabrication and Mechanisms of Atomically Thin Nanowell Patterns in Bilayer WS2 Using in Situ High Temperature Electron Microscopy

We show controlled production of atomically thin nanowells in bilayer WS₂ using an in situ heating holder combined with a focused electron beam in a scanning transmission electron microscope (STEM). We systematically study the formation and evolvement mechanism involved in removing a single layer of WS₂ within a bilayer region with 2 nm accuracy in location and without punching through to the other layer to create a hole. Best results are found when using a high temperature of 800 °C, because it enables thermally activated atomic migration and eliminates the interference from surface carbon contamination. We demonstrate precise control over spatial distributions with 5 nm accuracy of patterning and the width of nanowells adjustable by dose-dependent parameters. The mechanism of removing a monolayer of WS₂ within a bilayer region is different than removing equivalent sections in a monolayer film due to the van der Waals interaction of the underlying remaining layer in the bilayer system that stabilizes the excess W atom stoichiometry within the edges of the nanowell structure and facilitates expansion. This study offers insights for the nanoengineering of nanowells in two-dimensional (2D) transitional metal dichalcogenides (TMDs), which could hold potential as selective traps to localize 2D reactions in molecules and ions, underpinning the broader utilization of 2D material membranes.

Oxygen-Sensitive Layered MoTe2 Channels for Environmental Detection

The oxygen (O₂)-dependent resistance change of multilayered molybdenum ditelluride (MoTe₂) channels was characterized. A variation of the channel resistance could reproducibly determine relative O₂ content (denoted as the O₂ index). We found that Joule heating in a layered MoTe₂ field-effect transistor caused the O₂ index to decrease drastically from 100 to 12.1% in back gate modulation. Furthermore, Joule heating caused effective O₂ desorption from the MoTe₂ surface and repeatable O₂ detection by multilayered MoTe₂ channels was realized. This work not only explored the influence of O₂ on the electrical properties of multilayered MoTe₂ channels but also revealed that MoTe₂ channels are promising for sensing O₂ in an environmental condition.