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Marnauza M, Sjökvist R, Lehmann S, Dick KA. Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy. J Phys Chem Lett 2023; 14:7404-7410. [PMID: 37566795 PMCID: PMC10461298 DOI: 10.1021/acs.jpclett.3c01928] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
Several nanowire properties are strongly dependent on their diameter, which is notoriously difficult to control for III-Sb nanowires compared with other III-V nanowires. Herein environmental transmission electron microscopy is utilized to study the growth of Au nanoparticle seeded GaSb nanowires in situ. In this study, the real time changes to morphology and nanoparticle composition as a result of precursor V/III ratio are investigated. For a wide range of the growth parameters, it is observed that decreasing the V/III ratio increases the nanoparticle volume through Ga accumulation in the nanoparticle. The increase in nanoparticle volume in turn forces the nanowire diameter to expand. The effect of the V/III ratio on diameter allows the engineering of diameter modulated nanowires, where the modulation persisted after the growth. Lastly, this study demonstrates the observed trends can be reproduced in a conventional ex situ system, highlighting the transferability and importance of the results obtained in situ.
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Affiliation(s)
- Mikelis Marnauza
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Robin Sjökvist
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Sebastian Lehmann
- NanoLund, Lund University, 22100 Lund, Sweden
- Solid State Physics, Lund University, 22100 Lund, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
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2
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Schmiedeke P, Panciera F, Harmand JC, Travers L, Koblmüller G. Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale. NANOSCALE ADVANCES 2023; 5:2994-3004. [PMID: 37260482 PMCID: PMC10228496 DOI: 10.1039/d3na00135k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 05/02/2023] [Indexed: 06/02/2023]
Abstract
Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While much of this control has been enabled by direct, forward growth, the reverse reaction, i.e., crystal decomposition, provides very powerful means to further tailor properties towards the ultra-scaled dimensional level. Here, we use in situ transmission electron microscopy (TEM) to investigate the thermal decomposition kinetics of clean, ultrathin GaAs NWs and the role of distinctly different crystal polytypes in real-time and on the atomic scale. The whole process, from the NW growth to the decomposition, is conducted in situ without breaking vacuum to maintain pristine crystal surfaces. Radial decomposition occurs much faster for ZB- compared to WZ-phase NWs, due to the development of nano-faceted sidewall morphology and sublimation along the entire NW length. In contrast, WZ NWs form single-faceted, vertical sidewalls with decomposition proceeding only via step-flow mechanism from the NW tip. Concurrent axial decomposition is generally faster than the radial process, but is significantly faster (∼4-fold) in WZ phase, due to the absence of well-defined facets at the tip of WZ NWs. The results further show quantitatively the influence of the NW diameter on the sublimation and step-flow decomposition velocities elucidating several effects that can be exploited to fine-tune the NW dimensions.
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Affiliation(s)
- Paul Schmiedeke
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
| | - Federico Panciera
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Jean-Christophe Harmand
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Laurent Travers
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Gregor Koblmüller
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
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Liu Q, Zhang M, Gao X, Cheng L. Planar σ-Aromaticity in Ga-Doped Au Clusters. J Phys Chem A 2023; 127:2697-2704. [PMID: 36939847 DOI: 10.1021/acs.jpca.2c08741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/21/2023]
Abstract
Recently, the first example of Au-Ga clusters is synthesized and characterized, which can be described by the jellium model as a superatom with 8 valence electrons that come from the joint contribution of Au and Ga atoms, opening a whole new field for further research. Here, the structure features and stability of one Ga-doped Au cluster with magic number electrons (6 and 8) are analyzed in detail. Moreover, the valence electron fillings and chemical bonding of them are also further explored. It is found that Au3Ga and Au5Ga clusters present planar configurations, and they have higher stability than that of neighbor clusters. The AIMD simulations show that these two clusters still have a good thermal stability at 500 K. The molecular orbital analyses show that the Au3Ga and Au5Ga have three and one typical delocalization orbital throughout the whole planar spaces, respectively, following the planar σ-aromaticity rule. The ELF and LOL analyses are further performed, and the results are consistent with the molecular orbital analyses. The NICSzz-scan curves confirm that the Au3Ga is more aromatic than the Au5Ga, and the reason is that the former has more delocalized electrons than the latter. Our work opens up aromaticity studies in the Au-Ga clusters.
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Affiliation(s)
- Qiman Liu
- School of Chemistry and Materials Engineering, Huainan Normal University, Huainan 232038, P. R. China.,Anhui Provincial Institute of Modern Coal Processing Technology, Anhui University of Science and Technology, Huainan 232038, P. R. China
| | - Manli Zhang
- School of Chemistry and Materials Engineering, Huainan Normal University, Huainan 232038, P. R. China
| | - Xing Gao
- School of Chemistry and Materials Engineering, Huainan Normal University, Huainan 232038, P. R. China
| | - Longjiu Cheng
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Ministry of Education, Anhui University, Hefei, Anhui 230601, P. R. China
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Marnauza M, Tornberg M, Mårtensson EK, Jacobsson D, Dick KA. In situ observations of size effects in GaAs nanowire growth. NANOSCALE HORIZONS 2023; 8:291-296. [PMID: 36621012 DOI: 10.1039/d2nh00432a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Lateral dimensions of III-V nanowires are known to affect the growth dynamics and crystal structure. Investigations into size effects have in the past relied on theoretical models and post growth observations, which only give a limited insight into the growth dynamics. Here we show the first experimental investigation into how nanowire diameter affects the growth dynamics by growing Au-seeded GaAs nanowires in an environmental transmission electron microscope. This was done by recording videos of nanowires during growth and analysing the Ga-limited incubation time and As-limited step-flow time. Our data show that the incubation time is stable across the investigated diameter range aside from a sharp increase for the smallest diameter, whereas the step-flow time is observed to steadily increase across the diameter range. We show using a simple model that this can be explained by the increasing vapour pressure in the droplet. In addition to the existing understanding of nanowire growth at small dimensions being limited by nucleation this work provides experimental evidence that growth is also limited by the inability to finish the step-flow process.
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Affiliation(s)
- Mikelis Marnauza
- Centre for Analysis and Synthesis, Lund University, Lund 22100, Sweden.
- NanoLund, Lund University, Lund 22100, Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University, Lund 22100, Sweden.
- NanoLund, Lund University, Lund 22100, Sweden
| | - Erik K Mårtensson
- NanoLund, Lund University, Lund 22100, Sweden
- Division of Solid State Physics, Lund University, Lund 22100, Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University, Lund 22100, Sweden.
- NanoLund, Lund University, Lund 22100, Sweden
- National Centre for High Resolution Electron Microscopy, Lund University, Lund 22100, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, Lund 22100, Sweden.
- NanoLund, Lund University, Lund 22100, Sweden
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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Gang GW, Lee JH, Kim SY, Jeong T, Bin Kim K, Thi Hong Men N, Kim YR, Ahn SJ, Kim CS, Kim YH. Microstructural evolution in self-catalyzed GaAs nanowires during in-situ TEM study. NANOTECHNOLOGY 2021; 32:145709. [PMID: 33326944 DOI: 10.1088/1361-6528/abd437] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The microstructural evolutions in self-catalyzed GaAs nanowires (NWs) were investigated by using in situ heating transmission electron microscopy (TEM). The morphological changes of the self-catalyst metal gallium (Ga) droplet, the GaAs NWs, and the atomic behavior at the interface between the self-catalyst metal gallium and GaAs NWs were carefully studied by analysis of high-resolution TEM images. The microstructural change of the Ga-droplet/GaAs-NWs started at a low temperature of ∼200 °C. Formation and destruction of atomic layers were observed at the Ga/GaAs interface and slow depletion of the Ga droplet was detected in the temperature range investigated. Above 300 °C, the evolution process dramatically changed with time: The Ga droplet depleted rapidly and fast growth of zinc-blende (ZB) GaAs structures were observed in the droplet. The Ga droplet was completely removed with time and temperature. When the temperature reached ∼600 °C, the decomposition of GaAs was detected. This process began in the wurtzite (WZ) structure and propagated to the ZB structure. The morphological and atomistic behaviors in self-catalyzed GaAs NWs were demonstrated based on thermodynamic considerations, in addition to the effect of the incident electron beam in TEM. Finally, GaAs decomposition was demonstrated in terms of congruent vaporization.
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Affiliation(s)
- Geun Won Gang
- Department of Physics, Chungnam National University, 99 Daehak-Ro, Yuseong-Gu, Daejeon 34134, Republic of Korea
| | - Jong Hoon Lee
- UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919, Republic of Korea
| | - Su Yeon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Taehyeon Jeong
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Kyung Bin Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Nguyen Thi Hong Men
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Yu Ra Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Sang Jung Ahn
- Korea Research Institute of Standard and Science, 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
- Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Chung Soo Kim
- Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju 52851, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
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Time-resolved compositional mapping during in situ TEM studies. Ultramicroscopy 2021; 222:113193. [PMID: 33556850 DOI: 10.1016/j.ultramic.2020.113193] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 11/23/2020] [Accepted: 12/13/2020] [Indexed: 11/21/2022]
Abstract
In situ studies using transmission electron microscopy (TEM) can provide insights to how properties, structures and compositions of nanostructures are affected and evolving when exerted to heat or chemical exposure. While high-resolved imaging can be obtained continuously, at video-framerates of hundreds of frames per second (fps), compositional analysis struggles with time resolution due to the long acquisition times for a reliable analysis. This especially holds true when performing mapping (correlated spatial and compositional information). Hence, transient changes are difficult to resolve using mapping. In this work, the time-resolution of sequential mapping using scanning TEM (STEM) and energy dispersive spectroscopy (EDS) is improved by acquiring spectrum images during short times and filtering the spectroscopic data. The suggested algorithm uses regularization to smooth and prevent overfitting (known from compressed sensing) to fit model spectra to the data. The algorithm is applied on simulations as well as acquisitions of catalyzed crystal growth (nanowires), performed in situ in a specialized environmental TEM (ETEM). The results show the improved temporal resolution, where the compositional progression of the different regions of the nanostructure is revealed, here with a time-resolution as low as 16 s compared to the minutes usually needed for similar analysis.
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Sun Q, Pan D, Li M, Zhao J, Chen P, Lu W, Zou J. In situ TEM observation of the vapor-solid-solid growth of <001[combining macron]> InAs nanowires. NANOSCALE 2020; 12:11711-11717. [PMID: 32452500 DOI: 10.1039/d0nr02892d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
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Affiliation(s)
- Qiang Sun
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Meng Li
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
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Sun Q, Gao H, Zhang X, Yao X, Xu S, Zheng K, Chen P, Lu W, Zou J. High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE. NANOSCALE 2020; 12:271-276. [PMID: 31819937 DOI: 10.1039/c9nr08429k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, we have grown epitaxial wurtzite structured InAs nanosheets using Au catalysts on a GaAs{111}B substrate by molecular beam epitaxy. Through detailed electron microscopy characterization studies on grown nanosheets, it was found that these wurtzite structured InAs nanosheets grew epitaxially on the GaAs{111}B substrate, with {0001[combining macron]} catalyst/nanosheet interfaces and extensive {112[combining macron]0} surfaces. It was anticipated that the epitaxially grown InAs nanosheet can be triggered by a high supersaturation in catalysts, leading to an inclined growth leaving the substrate surface, and driven by the small lattice mismatch between the nanosheets and the substrate, with the orientation relationship of (0001[combining macron])InAs//(112[combining macron])GaAs. This study provides insights into achieving epitaxial free-standing III-V nanosheet growth.
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Affiliation(s)
- Qiang Sun
- Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Han Gao
- Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Xutao Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
| | - Xiaomei Yao
- Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia and State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
| | - Shengduo Xu
- Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia
| | - Kun Zheng
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China and School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Queensland 4072, Australia.
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In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth. Nat Commun 2019; 10:4577. [PMID: 31594930 PMCID: PMC6783420 DOI: 10.1038/s41467-019-12437-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 09/10/2019] [Indexed: 11/16/2022] Open
Abstract
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux. Semiconductor nanowires are promising materials for miniaturized devices, but a thorough understanding of their growth mechanism is necessary for controlled synthesis. Here, the authors use in situ spectroscopy and microscopy to measure the composition of the catalyst droplet as a function of different growth parameters during Au-seeded GaAs nanowire growth.
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