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Kim H, Liu Y, Lu K, Chang CS, Sung D, Akl M, Qiao K, Kim KS, Park BI, Zhu M, Suh JM, Kim J, Jeong J, Baek Y, Ji YJ, Kang S, Lee S, Han NM, Kim C, Choi C, Zhang X, Choi HK, Zhang Y, Wang H, Kong L, Afeefah NN, Ansari MNM, Park J, Lee K, Yeom GY, Kim S, Hwang J, Kong J, Bae SH, Shi Y, Hong S, Kong W, Kim J. High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process. NATURE NANOTECHNOLOGY 2023; 18:464-470. [PMID: 36941360 DOI: 10.1038/s41565-023-01340-3] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Accepted: 02/03/2023] [Indexed: 05/21/2023]
Abstract
Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.
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Affiliation(s)
- Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunpeng Liu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuangye Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Celesta S Chang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Marx Akl
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Kuan Qiao
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jun Min Suh
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jekyung Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Junseok Jeong
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungsu Kang
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Sangho Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chansoo Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyeong-Kyu Choi
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lingping Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Nordin Noor Afeefah
- Institute of Power Engineering, Universiti Tenaga Nasional, Kajang, Malaysia
| | | | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungkyu Kim
- HMC, Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jing Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA
- Institute of Materials Science and Engineering, Washington University in St Louis, St Louis, MO, USA
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Suklyun Hong
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea.
| | - Wei Kong
- Department of Materials Science and Engineering, Westlake University, Hangzhou, Zhejiang, China.
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA.
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2
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Kim H, Lee S, Shin J, Zhu M, Akl M, Lu K, Han NM, Baek Y, Chang CS, Suh JM, Kim KS, Park BI, Zhang Y, Choi C, Shin H, Yu H, Meng Y, Kim SI, Seo S, Lee K, Kum HS, Lee JH, Ahn JH, Bae SH, Hwang J, Shi Y, Kim J. Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction. NATURE NANOTECHNOLOGY 2022; 17:1054-1059. [PMID: 36138198 DOI: 10.1038/s41565-022-01200-6] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 07/22/2022] [Indexed: 06/16/2023]
Abstract
Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems1. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials2. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles3. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.
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Affiliation(s)
- Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sangho Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jiho Shin
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Marx Akl
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Kuangye Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Celesta S Chang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jun Min Suh
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - He Yu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA
| | - Seung-Il Kim
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea
| | - Seungju Seo
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Hyun S Kum
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in Saint Louis, St. Louis, MO, USA.
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA.
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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3
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Zhu W, Zhang Y, Shen J, Shi Y, Li M, Lian J. Large-Area Uniaxial-Oriented Growth of Free-Standing Thin Films at the Liquid-Air Interface with Millimeter-Sized Grains. ACS NANO 2022; 16:11802-11814. [PMID: 35786949 DOI: 10.1021/acsnano.1c07662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulating materials at the atomic scale and assembling them into macroscopic structures with controlled dimensionalities and single-crystal quality are grand scientific challenges. Here, we report a general solvent evaporation method to synthesize large-area uniaxial-oriented growth of free-standing thin films at the liquid-air interface. Crystals nucleate at the solution surface and rotate into the same orientation under electrostatic interaction and then merge as large crystals and grow laterally into a large-area uniform thin film with millimeter-sized grains. The lateral dimension is confined only by the size of containers. The film thickness can be tuned by adjusting solvent evaporation rate (R) and solute diffusivity (D), and a characteristic length, L * ∼ D R , was derived to estimate the film thickness. Molecular dynamic (MD) simulations reveal a concentration spike at the liquid-air interface during fast solvent evaporation, leading to the lateral growth of thin films. The large-area uniaxial oriented films are demonstrated on both inorganic metal halides and hybrid metal halide perovskites. The solvent evaporation approach and the determination of key parameters enabling film thickness prediction are beneficial to the high throughput and scalable production of single crystal-quality thin film materials under controlled evaporation conditions.
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Affiliation(s)
- Weiguang Zhu
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Junhua Shen
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Mingxin Li
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Jie Lian
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
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4
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Wondraczek L, Bouchbinder E, Ehrlicher A, Mauro JC, Sajzew R, Smedskjaer MM. Advancing the Mechanical Performance of Glasses: Perspectives and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109029. [PMID: 34870862 DOI: 10.1002/adma.202109029] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Glasses are materials that lack a crystalline microstructure and long-range atomic order. Instead, they feature heterogeneity and disorder on superstructural scales, which have profound consequences for their elastic response, material strength, fracture toughness, and the characteristics of dynamic fracture. These structure-property relations present a rich field of study in fundamental glass physics and are also becoming increasingly important in the design of modern materials with improved mechanical performance. A first step in this direction involves glass-like materials that retain optical transparency and the haptics of classical glass products, while overcoming the limitations of brittleness. Among these, novel types of oxide glasses, hybrid glasses, phase-separated glasses, and bioinspired glass-polymer composites hold significant promise. Such materials are designed from the bottom-up, building on structure-property relations, modeling of stresses and strains at relevant length scales, and machine learning predictions. Their fabrication requires a more scientifically driven approach to materials design and processing, building on the physics of structural disorder and its consequences for structural rearrangements, defect initiation, and dynamic fracture in response to mechanical load. In this article, a perspective is provided on this highly interdisciplinary field of research in terms of its most recent challenges and opportunities.
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Affiliation(s)
- Lothar Wondraczek
- Otto Schott Institute of Materials Research, Friedrich Schiller University Jena, Fraunhoferstrasse 6, 07743, Jena, Germany
- Center of Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7, 07743, Jena, Germany
| | - Eran Bouchbinder
- Chemical and Biological Physics Department, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Allen Ehrlicher
- Department of Bioengineering, McGill University, Montreal, H3A 2A7, Canada
| | - John C Mauro
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Roman Sajzew
- Otto Schott Institute of Materials Research, Friedrich Schiller University Jena, Fraunhoferstrasse 6, 07743, Jena, Germany
| | - Morten M Smedskjaer
- Department of Chemistry and Bioscience, Aalborg University, Aalborg, 9220, Denmark
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Karlsson S. Compositional Effects on Indentation Mechanical Properties of Chemically Strengthened TiO 2-Doped Soda Lime Silicate Glasses. MATERIALS 2022; 15:ma15020577. [PMID: 35057295 PMCID: PMC8779215 DOI: 10.3390/ma15020577] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2021] [Revised: 01/07/2022] [Accepted: 01/10/2022] [Indexed: 11/28/2022]
Abstract
TiO2 is an important oxide for property modifications in the conventional soda lime silicate glass family. It offers interesting optical and mechanical properties, for instance, by substituting heavy metals such as lead in consumer glasses. The compositional effects on the hardness, reduced elastic modulus and crack resistance as determined by indentation of chemically strengthened (CS) TiO2-doped soda lime silicate glass was studied in the current paper. The CS, which was performed by a K+ for Na+ ion exchange in a molten KNO3 salt bath at 450 °C for 15 h, yielded significant changes in the indentation mechanical properties. The hardness of the glass samples increased, and this was notably dependent on the SiO2, CaO and TiO2 content. The reduced elastic modulus was less affected by the CS but showed decrease for most samples. The crack resistance, an important property in many applications where glasses are subjected to contact damage, showed very different behaviors among the series. Only one of the series did significantly improve the crack resistance where low CaO content, high TiO2 content, high molar volume and increased elastic deformation favored an increased crack resistance.
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Affiliation(s)
- Stefan Karlsson
- Glass Unit, Department of Building and Real Estate, Division of Built Environment, RISE Research Institutes of Sweden, Vejdes plats 3, 352 52 Växjö, Sweden
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6
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Du T, Liu H, Tang L, Sørensen SS, Bauchy M, Smedskjaer MM. Predicting Fracture Propensity in Amorphous Alumina from Its Static Structure Using Machine Learning. ACS NANO 2021; 15:17705-17716. [PMID: 34723489 DOI: 10.1021/acsnano.1c05619] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thin films of amorphous alumina (a-Al2O3) have recently been found to deform permanently up to 100% elongation without fracture at room temperature. If the underlying ductile deformation mechanism can be understood at the nanoscale and exploited in bulk samples, it could help to facilitate the design of damage-tolerant glassy materials, the holy grail within glass science. Here, based on atomistic simulations and classification-based machine learning, we reveal that the propensity of a-Al2O3 to exhibit nanoscale ductility is encoded in its static (nonstrained) structure. By considering the fracture response of a series of a-Al2O3 systems quenched under varying pressure, we demonstrate that the degree of nanoductility is correlated with the number of bond switching events, specifically the fraction of 5- and 6-fold coordinated Al atoms, which are able to decrease their coordination numbers under stress. In turn, we find that the tendency for bond switching can be predicted based on a nonintuitive structural descriptor calculated based on the static structure, namely, the recently developed "softness" metric as determined from machine learning. Importantly, the softness metric is here trained from the spontaneous dynamics of the system (i.e., under zero strain) but, interestingly, is able to readily predict the fracture behavior of the glass (i.e., under strain). That is, lower softness facilitates Al bond switching and the local accumulation of high-softness regions leads to rapid crack propagation. These results are helpful for designing glass formulations with improved resistance to fracture.
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Affiliation(s)
- Tao Du
- Department of Chemistry and Bioscience, Aalborg University, Aalborg 9220, Denmark
| | - Han Liu
- Physics of AmoRphous and Inorganic Solids Laboratory (PARISlab), Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095, United States
| | - Longwen Tang
- Physics of AmoRphous and Inorganic Solids Laboratory (PARISlab), Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095, United States
| | - Søren S Sørensen
- Department of Chemistry and Bioscience, Aalborg University, Aalborg 9220, Denmark
| | - Mathieu Bauchy
- Physics of AmoRphous and Inorganic Solids Laboratory (PARISlab), Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095, United States
| | - Morten M Smedskjaer
- Department of Chemistry and Bioscience, Aalborg University, Aalborg 9220, Denmark
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Micoulaut M, Laurent O. Noble gas in densified liquid and amorphous silica and thermodynamic conditions for the emergence of bubbles. J Chem Phys 2021; 155:054504. [PMID: 34364356 DOI: 10.1063/5.0056362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Different noble gases (He, Ne, and Ar) containing densified silica liquids and glasses are investigated from molecular dynamics simulations at different system densities using a dedicated force field. The results for pure silica are first compared to reference potentials prior to an investigation of the thermodynamic diagram, the diffusivity, and the structure under different (T, P) conditions. It is found that the equation of state and the diffusivity are weakly sensitive to the nature of the incorporated noble gas, leading to a similar trend with density for all systems. The network structure is weakly altered by the presence of the gas, and pressure induced structural changes are those usually found for amorphous and liquid silica, i.e., Si coordination increase, tetrahedral to octahedral conversion of the base geometry, and collapse of large rings under pressure. Ne- and Ar-based systems display an increased structuration, however, as preferential distances appear in gas-gas correlations at large densities in both the liquid and amorphous states. Finally, we focus on the conditions of heterogeneity that are driven by the formation of noble gas bubbles, and these appear for a threshold density ρc that is observed for all systems.
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Affiliation(s)
- M Micoulaut
- Sorbonne Université, Laboratoire de Physique Théorique de la Matière Condensée, CNRS UMR 7600, 4 Place Jussieu, 75252 Paris Cedex 05, France
| | - O Laurent
- Sorbonne Université, Laboratoire de Physique Théorique de la Matière Condensée, CNRS UMR 7600, 4 Place Jussieu, 75252 Paris Cedex 05, France
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