Generating Ultrabroadband Deep-UV Radiation and Sub-10 nm Gap by Hybrid-Morphology Gold Antennas

Modal Phase-Matched Bound States in the Continuum for Enhancing Third Harmonic Generation of Deep Ultraviolet Emission

Coherent deep ultraviolet (DUV) light sources are crucial for various applications such as nanolithography, biomedical imaging, and spectroscopy. DUV light sources can be generated by using conventional nonlinear optical crystals (NLOs). However, NLOs are limited by their bulky size, inadequate transparency at the DUV regime, and stringent phase-matching requirements for harmonic generation. Recently, dielectric metasurfaces support high Q-factor resonances and offer a promising approach for efficient harmonic generation at short wavelengths. In this study, we demonstrated a crystalline silicon (c-Si) metasurface simultaneously exciting modal phase-matched bound states in the continuum (BIC) resonance at the fundamental wavelength of 840 nm with a higher degree of freedom for precise control of the BIC resonance and a plasmonic resonance at the wavelength of 280 nm in the DUV to enhance third harmonic generation (THG). We experimentally achieved a Q-factor of ∼180 owing to the relatively large refractive index of the c-Si and the geometric symmetry breaking of the structure. We realized THG at a wavelength of 280 nm with a power of 14.5 nW by using a peak power density of 15 GW/cm2 excitation. The measured THG power is 14 times higher than the state-of-the-art THG dielectric metasurfaces using the same peak power density in the DUV regime, and the maximum obtained THG power enhancement factor is up to 48. This approach relies on the significant third-order nonlinear susceptibility of c-Si, the interband plasmonic nature of the c-Si in the DUV, and the strong field confinement of BIC resonance to boost overall nonlinear conversion efficiency to 5.2 × 10-6% in the DUV regime. Our work shows the potential of c-Si BIC metasurfaces for developing efficient and ultracompact DUV light sources using high-efficacy nonlinear optical devices.

Nanoscale reshaping of resonant dielectric microstructures by light-driven explosions

Femtosecond-laser-assisted material restructuring employs extreme optical intensities to localize the ablation regions. To overcome the minimum feature size limit set by the wave nature of photons, there is a need for new approaches to tailored material processing at the nanoscale. Here, we report the formation of deeply-subwavelength features in silicon, enabled by localized laser-induced phase explosions in prefabricated silicon resonators. Using short trains of mid-infrared laser pulses, we demonstrate the controllable formation of high aspect ratio (>10:1) nanotrenches as narrow as [Formula: see text]. The trench geometry is shown to be scalable with wavelength, and controlled by multiple parameters of the laser pulse train, such as the intensity and polarization of each laser pulse and their total number. Particle-in-cell simulations reveal localized heating of silicon beyond its boiling point and suggest its subsequent phase explosion on the nanoscale commensurate with the experimental data. The observed femtosecond-laser assisted nanostructuring of engineered microstructures (FLANEM) expands the nanofabrication toolbox and opens exciting opportunities for high-throughput optical methods of nanoscale structuring of solid materials.

Dynamic Beam Steering and Focusing Graphene Metasurface Mirror Based on Fermi Energy Control

Beam steering technology is crucial for radio frequency and infrared telecommunication signal processing. Microelectromechanical systems (MEMS) are typically used for beam steering in infrared optics-based fields but have slow operational speeds. An alternative solution is to use tunable metasurfaces. Since graphene has gate-tunable optical properties, it is widely used in electrically tunable optical devices due to ultrathin physical thickness. We propose a tunable metasurface structure using graphene in a metal gap structure that can exhibit a fast-operating speed through bias control. The proposed structure can change beam steering and can focus immediately by controlling the Fermi energy distribution on the metasurface, thus overcoming the limitations of MEMS. The operation is numerically demonstrated through finite element method simulations.

Two-dimensional two-photon absorptions and third-order nonlinear optical properties of Ih fullerenes and fullerene onions

The third order nonlinear optical properties of I_h symmetry fullerenes increase exponentially with fullerene size. The two-dimensional two-photon absorption spectra for C₆₀ and C₂₄₀ have strong self-phase modulation responses.

Micro-to-nanometer patterning of solution-based materials for electronics and optoelectronics

Technologies for micro-to-nanometer patterns of solution-based materials (SBMs) contribute to a wide range of practical applications in the fields of electronics and optoelectronics. Here, state-of-the-art micro-to-nanometer scale patterning technologies of SBMs are disseminated. The utilisation of patterning for a wide-range of SBMs leads to a high level of control over conventional solution-based film fabrication processes that are not easily accessible for the control and fabrication of ordered micro-to-nanometer patterns. In this review, various patterning procedures of SBMs, including modified photolithography, direct-contact patterning, and inkjet printing, are briefly introduced with several strategies for reducing their pattern size to enhance the electronic and optoelectronic properties of SBMs explained. We then conclude with comments on future research directions in the field.