1
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Niu C, Wang M, Zhang Z, Qiu G, Wang Y, Zheng D, Liao PY, Wu W, Ye PD. Superconducting Field-Effect Transistors with Pd xTe-Te Intimate Contacts. ACS NANO 2024; 18:15107-15113. [PMID: 38819119 DOI: 10.1021/acsnano.4c02352] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
Superconducting-based electronic devices have shown great potential for future quantum computing applications. One key building block device is a superconducting field-effect transistor based on a superconductor-semiconductor-superconductor Josephson-junction (JJ) with a gate-tunable semiconducting channel. However, the performance of such devices is highly dependent on the quality of the superconductor to semiconductor interface. In this study, we present an alternative method to obtain a high-quality interface by using intimate contact. We investigate the proximity-induced superconductivity in chiral crystal tellurium (Te) and fabricate a PdxTe-Te-PdxTe JJ with an ambipolar supercurrent that is gate-tunable and exhibits multiple Andreev reflections. The semiconducting two-dimensional Te single crystal is grown hydrothermally and partially converted to superconducting PdxTe by controlled annealing. Our work demonstrates a promising path for realizing controllable superconducting electronic devices with high-quality superconducting interfaces; thus, we can continue to advance the field of quantum computing and other interface-based technologies.
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Affiliation(s)
- Chang Niu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mingyi Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zhuocheng Zhang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Gang Qiu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yixiu Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Dongqi Zheng
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pai-Ying Liao
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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2
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Zheng H, Cheung LY, Sangwan N, Kononov A, Haller R, Ridderbos J, Ciaccia C, Ungerer JH, Li A, Bakkers EP, Baumgartner A, Schönenberger C. Coherent Control of a Few-Channel Hole Type Gatemon Qubit. NANO LETTERS 2024; 24:7173-7179. [PMID: 38848282 PMCID: PMC11194827 DOI: 10.1021/acs.nanolett.4c00770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 05/03/2024] [Accepted: 05/06/2024] [Indexed: 06/09/2024]
Abstract
Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained using a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junction is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.
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Affiliation(s)
- Han Zheng
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Luk Yi Cheung
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Nikunj Sangwan
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Artem Kononov
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Roy Haller
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Joost Ridderbos
- MESA+
Institute for Nanotechnology University of Twente, 7500 AE Enschede, The Netherlands
| | - Carlo Ciaccia
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Jann Hinnerk Ungerer
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Ang Li
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P.A.M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Andreas Baumgartner
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
| | - Christian Schönenberger
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
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3
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Gao H, Kong ZZ, Zhang P, Luo Y, Su H, Liu XF, Wang GL, Wang JY, Xu HQ. Gate-defined quantum point contacts in a germanium quantum well. NANOSCALE 2024; 16:10333-10339. [PMID: 38738596 DOI: 10.1039/d4nr00712c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At a zero magnetic field, we observed quantized conductance plateaus in units of 2e2/h. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5 meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get split due to the Zeeman effect and Landé g factors were estimated to be ∼6.6 for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as building blocks.
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Affiliation(s)
- Han Gao
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.
| | - Zhen-Zhen Kong
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
| | - Po Zhang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
| | - Yi Luo
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
| | - Haitian Su
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xiao-Fei Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
| | - Gui-Lei Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Ji-Yin Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
| | - H Q Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China.
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
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4
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Behrle R, Murphey CGE, Cahoon JF, Barth S, den Hertog MI, Weber WM, Sistani M. Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19350-19358. [PMID: 38563742 DOI: 10.1021/acsami.3c18674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Understanding the electronic transport of metal-semiconductor heterojunctions is of utmost importance for a wide range of emerging nanoelectronic devices like adaptive transistors, biosensors, and quantum devices. Here, we provide a comparison and in-depth discussion of the investigated Schottky heterojunction devices based on Si and Ge nanowires contacted with pure single-crystal Al. Key for the fabrication of these devices is the selective solid-state metal-semiconductor exchange of Si and Ge nanowires into Al, delivering void-free, single-crystal Al contacts with flat Schottky junctions, distinct from the bulk counterparts. Thereof, a systematic comparison of the temperature-dependent charge carrier injection and transport in Si and Ge by means of current-bias spectroscopy is visualized by 2D colormaps. Thus, it reveals important insights into the operation mechanisms and regimes that cannot be exploited by conventional single-sweep output and transfer characteristics. Importantly, it was found that the Al-Si system shows symmetric effective Schottky barrier (SB) heights for holes and electrons, whereas the Al-Ge system reveals a highly transparent contact for holes due to Fermi level pinning close to the valence band with charge carrier injection saturation due to a thinned effective SB. Moreover, thermionic field emission limits the overall electron conduction, indicating a distinct SB for electrons.
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Affiliation(s)
- Raphael Behrle
- Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria
| | - Corban G E Murphey
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States
| | - James F Cahoon
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States
| | - Sven Barth
- Physics Institute, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany
- Institute of Inorganic and Analytical Chemistry, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany
| | | | - Walter M Weber
- Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria
| | - Masiar Sistani
- Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria
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5
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Ming M, Gao F, Wang JH, Zhang JY, Wang T, Yao Y, Hu H, Zhang JJ. Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates. NANOSCALE 2023; 15:7311-7317. [PMID: 37013680 DOI: 10.1039/d2nr05238e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Ge/Si nanowires are predicted to be a promising platform for spin and even topological qubits. While for large-scale integration of these devices, nanowires with fully controlled positions and arrangements are a prerequisite. Here, we have reported ordered Ge hut wires by multilayer heteroepitaxy on patterned Si (001) substrates. Self-assembled GeSi hut wire arrays are orderly grown inside patterned trenches with post growth surface flatness. Such embedded GeSi wires induce tensile strain on the Si surface, which results in preferential nucleation of Ge nanostructures. Ordered Ge nano-dashes, disconnected wires and continuous wires are obtained correspondingly by tuning the growth conditions. These site-controlled Ge nanowires on a flattened surface lead to the ease of fabrication and large-scale integration of nanowire quantum devices.
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Affiliation(s)
- Ming Ming
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Hefei National Laboratory, Hefei 230088, China
| | - Fei Gao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Qilu Institute of Technology, Jinan 250200, China
| | - Jian-Huan Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Hefei National Laboratory, Hefei 230088, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Jie-Yin Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Hefei National Laboratory, Hefei 230088, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Ting Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Hefei National Laboratory, Hefei 230088, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yuan Yao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Hao Hu
- Hefei National Laboratory, Hefei 230088, China
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China
| | - Jian-Jun Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Hefei National Laboratory, Hefei 230088, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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6
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Johnson BC, Stuiber M, Creedon DL, Bose M, Berhane A, Willems van Beveren LH, Rubanov S, Cole JH, Mourik V, Hamilton AR, Duty TL, McCallum JC. Silicon-Aluminum Phase-Transformation-Induced Superconducting Rings. NANO LETTERS 2023; 23:17-24. [PMID: 36573935 DOI: 10.1021/acs.nanolett.2c02814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The development of devices that exhibit both superconducting and semiconducting properties is an important endeavor for emerging quantum technologies. We investigate superconducting nanowires fabricated on a silicon-on-insulator (SOI) platform. Aluminum from deposited contact electrodes is found to interdiffuse with Si along the entire length of the nanowire, over micrometer length scales and at temperatures well below the Al-Si eutectic. The phase-transformed material is conformal with the predefined device patterns. The superconducting properties of a transformed mesoscopic ring formed on a SOI platform are investigated. Low-temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.
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Affiliation(s)
- Brett C Johnson
- School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Michael Stuiber
- Melbourne Centre for Nanofabrication, Clayton, Victoria3168, Australia
| | - Daniel L Creedon
- School of Physics, University of Melbourne, Parkville, Victoria3010, Australia
| | - Manjith Bose
- School of Physics, University of Melbourne, Parkville, Victoria3010, Australia
| | - Amanuel Berhane
- School of Physics, University of New South Wales, Sydney, New South Wales1466, Australia
| | | | - Sergey Rubanov
- Ian Holmes Imaging Centre, Bio21 Institute, University of Melbourne, Parkville, Victoria3010, Australia
| | - Jared H Cole
- School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Vincent Mourik
- School of Physics, University of New South Wales, Sydney, New South Wales1466, Australia
| | - Alexander R Hamilton
- School of Physics, University of New South Wales, Sydney, New South Wales1466, Australia
| | - Timothy L Duty
- School of Physics, University of New South Wales, Sydney, New South Wales1466, Australia
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7
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Wind L, Sistani M, Böckle R, Smoliner J, Vukŭsić L, Aberl J, Brehm M, Schweizer P, Maeder X, Michler J, Fournel F, Hartmann JM, Weber WM. Composition Dependent Electrical Transport in Si 1-x Ge x Nanosheets with Monolithic Single-Elementary Al Contacts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204178. [PMID: 36135726 DOI: 10.1002/smll.202204178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Revised: 08/25/2022] [Indexed: 06/16/2023]
Abstract
Si1-x Gex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-x Gex junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si1-x Gex heterostructures, obtained from a thermally induced exchange between ultra-thin Si1-x Gex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si1-x Gex segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si1-x Gex into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si1-x Gex composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si1-x Gex junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.
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Affiliation(s)
- Lukas Wind
- Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Masiar Sistani
- Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Raphael Böckle
- Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Jürgen Smoliner
- Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Lada Vukŭsić
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria
| | - Johannes Aberl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria
| | - Moritz Brehm
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, Linz, 4040, Austria
| | - Peter Schweizer
- Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland
| | - Xavier Maeder
- Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland
| | - Johann Michler
- Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, Thun, 3602, Switzerland
| | - Frank Fournel
- CEA-LETI, University Grenoble Alpes, 17 Avenue des Martyrs, Grenoble, 38000, France
| | - Jean-Michel Hartmann
- CEA-LETI, University Grenoble Alpes, 17 Avenue des Martyrs, Grenoble, 38000, France
| | - Walter M Weber
- Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
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8
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Wind L, Böckle R, Sistani M, Schweizer P, Maeder X, Michler J, Murphey CG, Cahoon J, Weber WM. Monolithic and Single-Crystalline Aluminum-Silicon Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26238-26244. [PMID: 35621308 PMCID: PMC9185687 DOI: 10.1021/acsami.2c04599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Accepted: 05/16/2022] [Indexed: 06/15/2023]
Abstract
Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al-Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and Al contacts. This is enabled by a thermally induced Al-Si exchange reaction, which forms abrupt and void-free metal-semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as ρ = (6.31 ± 1.17) × 10-8 Ω m and breakdown current densities of Jmax = (1 ± 0.13) × 1012 Ω m-2. Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al-Si-Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back- and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal-oxide semiconductor fabrication, the proposed thermally induced Al-Si exchange reaction may give rise to the development of next-generation reconfigurable electronics relying on reproducible nanojunctions.
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Affiliation(s)
- Lukas Wind
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Raphael Böckle
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Masiar Sistani
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
| | - Peter Schweizer
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Xavier Maeder
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Johann Michler
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkstrasse 39, 3602 Thun, Switzerland
| | - Corban G.E. Murphey
- Department
of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599-3290, United States
| | - James Cahoon
- Department
of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599-3290, United States
| | - Walter M. Weber
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria
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9
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Delaforce J, Sistani M, Kramer RBG, Luong MA, Roch N, Weber WM, den Hertog MI, Robin E, Naud C, Lugstein A, Buisson O. Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101989. [PMID: 34365674 DOI: 10.1002/adma.202101989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Revised: 05/31/2021] [Indexed: 06/13/2023]
Abstract
Superconductor-semiconductor-superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well as for future high-performance low power dissipating nanoelectronic and quantum devices. In this work, ultrascaled monolithic Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge (i-Ge) quantum dots. In particular, demonstrating the ability to tune the Ge quantum dot device from completely insulating, through a single-hole-filling quantum dot regime, to a supercurrent regime, resembling a Josephson field effect transistor with a maximum critical current of 10 nA at a temperature of 390 mK. The realization of a Josephson field-effect transistor with high junction transparency provides a mechanism to study sub-gap transport mediated by Andreev states. The presented results reveal a promising intrinsic Ge-based architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and key components of quantum computing such as gatemons or gate tunable superconducting quantum interference devices.
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Affiliation(s)
- Jovian Delaforce
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Masiar Sistani
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Roman B G Kramer
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Minh A Luong
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Nicolas Roch
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Walter M Weber
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | | | - Eric Robin
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Cecile Naud
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Alois Lugstein
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Olivier Buisson
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
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10
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de Leon NP, Itoh KM, Kim D, Mehta KK, Northup TE, Paik H, Palmer BS, Samarth N, Sangtawesin S, Steuerman DW. Materials challenges and opportunities for quantum computing hardware. Science 2021; 372:372/6539/eabb2823. [PMID: 33859004 DOI: 10.1126/science.abb2823] [Citation(s) in RCA: 65] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Quantum computing hardware technologies have advanced during the past two decades, with the goal of building systems that can solve problems that are intractable on classical computers. The ability to realize large-scale systems depends on major advances in materials science, materials engineering, and new fabrication techniques. We identify key materials challenges that currently limit progress in five quantum computing hardware platforms, propose how to tackle these problems, and discuss some new areas for exploration. Addressing these materials challenges will require scientists and engineers to work together to create new, interdisciplinary approaches beyond the current boundaries of the quantum computing field.
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Affiliation(s)
- Nathalie P de Leon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan
| | - Dohun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Karan K Mehta
- Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8092 Zürich, Switzerland
| | - Tracy E Northup
- Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria
| | - Hanhee Paik
- IBM Quantum, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
| | - B S Palmer
- Laboratory for Physical Sciences, University of Maryland, College Park, MD 20740, USA.,Quantum Materials Center, University of Maryland, College Park, MD 20742, USA
| | - N Samarth
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sorawis Sangtawesin
- School of Physics and Center of Excellence in Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
| | - D W Steuerman
- Kavli Foundation, 5715 Mesmer Avenue, Los Angeles, CA 90230, USA
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