Reduced Turn-On Voltage and Boosted Mobility in Monolayer WS2 Transistors by Mild Ar+ Plasma Treatment

Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review

Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices

Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly investigated for applications such as optoelectronic memories, artificial neurons, sensors, and others that require storing photogenerated signals for an extended period. In this work, we report an environment- and gate voltage-dependent photocurrent modulation method of TMD monolayer-based devices (WS2 and MoS2). To achieve this, we introduce structural defects using mild argon-oxygen plasma treatment. The treatment leads to an extraordinary over 150-fold enhancement of the photocurrent in vacuum along with an increase in the relaxation time. A significant environmental and electrostatic dependence of the photocurrent signal is observed. We claim that the effect is a combined result of atomic vacancy introduction and oxide formation, strengthened by optimal wavelength choice for the modified surface. We believe that this work contributes to paving the way for tunable 2D TMD optoelectronic applications.

Screening of transition metal single-atom catalysts supported by a WS2 monolayer for electrocatalytic nitrogen reduction reaction: insights from activity trend and descriptor

The electrocatalytic nitrogen reduction reaction (NRR), as an alternative green technology to the Haber-Bosch process, can efficiently synthesize ammonia under ambient conditions and has a reduced carbon footprint. Here we systematically investigate the NRR activity and selectivity of transition metal (TM) single-atom catalyst (SAC) anchored WS₂ monolayers (TM@WS₂) by means of first-principles calculations and microkinetic modeling. The construction of the reaction activity trend and the identification of an activity descriptor, namely *N₂H adsorption energy, facilitate the efficient screening and rational design of SACs with high activity. Manipulating the adsorption strength of the pivotal *N₂H intermediate is a potential strategy for enhancing NRR activity. Utilizing the limiting potential difference of NRR and the hydrogen evolution reaction (HER) as a selectivity descriptor, we screen three SACs with excellent activity and selectivity toward NRR, i.e., Re@WS₂, Os@WS₂ and Ir@WS₂ with favorable limiting potentials of -0.44 V, -0.38 V and -0.69 V. By using the explicit H₉O₄⁺ model, the kinetic barriers of the rate-determining steps (0.47 eV-1.15 eV) of the solvated proton transfer on the screened SACs are found to be moderate, indicative of a kinetically feasible process. Microkinetic modeling shows that the turnover frequencies of N₂ reduction to NH₃ on Re@WS₂, Os@WS₂ and Ir@WS₂ are 1.52 × 10⁵, 8.21 × 10² and 4.17 × 10^-4 per s per site at 400 K, achieving fast reaction rates. The coexistence of empty and occupied 5d orbitals of candidate SACs is beneficial for σ donation and π* backdonation, endowing them with extraordinary N₂ adsorption and activation. Moreover, the screened SACs possess good dispersity and thermodynamic stability. Our work provides a promising solution for the efficient screening and rational design of high-performance electrocatalysts toward the NRR.