Tiled Monolayer Films of 2D Molybdenum Disulfide Nanoflakes Assembled at Liquid/Liquid Interfaces

Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks

Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here, novel AC electrical techniques are introduced to fully characterize the effect of strain on the resistance of high-mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices are initially characterized using DC piezoresistance measurements and show good cyclability and a linear strain response, consistent with a low gauge factor of G ≈ 3. However, AC impedance spectroscopy measurements, performed as a function of strain, allow the measurement of the effects of strain on both the nanosheets and the inter-nanosheet junctions separately. The junction resistance is found to increase linearly with strain, while the nanosheet resistance remains constant. This response is consistent with strain-induced sliding of the highly-aligned nanosheets past one another, without any strain being transferred to the sheets themselves. The approach allows for the individual estimation of the contributions of dimensional factors (G ≈ 1.4) and material factors (G ≈ 1.9) to the total gauge factor. This novel technique may provide insights into other piezoresistive systems.

Layer-by-layer assembly yields thin graphene films with near theoretical conductivity

Thin films fabricated from solution-processed graphene nanosheets are of considerable technological interest for a wide variety of applications, such as transparent conductors, supercapacitors, and memristors. However, very thin printed films tend to have low conductivity compared to thicker ones. In this work, we demonstrate a simple layer-by-layer deposition method which yields thin films of highly-aligned, electrochemically-exfoliated graphene which have low roughness and nanometer-scale thickness control. By optimising the deposition parameters, we demonstrate films with high conductivity (1.3 × 105 S/m) at very low thickness (11 nm). Finally, we connect our high conductivities to low inter-nanosheet junction resistances (RJ), which we estimate at RJ ~ 1kΩ.

Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces

Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μNet) as close as possible to that of individual nanosheets (μNS). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (RJ) to nanosheet resistance (RNS), determines the network mobility via μNS/μNet ≈ RJ/RNS + 1. Hence, achieving RJ/RNS < 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing RJ. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of σNet = 5 × 104 S/m while our semiconducting MoS2 networks demonstrate record mobility of μNet = 30 cm2/(V s), both at extremely low network thickness (tNet < 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm-thick.

Unveiling Negative Differential Resistance and Superionic Conductivity: Water Anchored on Layered Materials

Unravelling the perplexing nature of negative differential resistance (NDR) in 2D transition metal dichalcogenide (2D TMD) devices, especially regarding intrinsic properties, is hindered by experiments conducted in ambient environments. A thorough investigation is essential for unveiling the actual mechanism. In this study, we provide compelling evidence of the NDR effect with a remarkably high peak-to-valley current ratio and proton-diffused superionic conductivity in quantum-confined water molecules anchored to a thin film of 2D TMDs. Our investigation underscores the crucial role of ambient moisture for this robust NDR effect independent of underlying materials used. The bonding of water molecules to the existing sulfur defect sites on 2D TMD nanoflakes facilitates the formation of bridges between two planar metal electrodes, thus enabling superionic in-plane protonic conduction. During electrolysis of chemisorbed water, protons are liberated at the anode and migrate toward the cathode during bias voltage sweeping. Nevertheless, proton diffusion encounters increasing impedance beyond a certain applied bias, thereby restricting current flow even with higher biasing voltages, which is attributed to the interfacial Schottky energy barrier influenced by the Fermi level pinning effect. Our DFT simulations corroborate this mechanism, revealing minimal intermolecular interaction of H+ ions compared to OH- ions at distinct atomic sites on 2D TMD nanoflakes.

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.

Liquid-Liquid Interface-Assisted Self-Assembly of Ag-Doped ZnO Nanosheets for Atomic Switch Application

Developing facile and inexpensive methods for obtaining large-area two-dimensional semiconducting nanosheets is highly desirable for mass-scale device application. Here, we report a method for producing uniform and large-area films of a Ag-doped ZnO (AZO) nanosheet network via self-assembly at the hexane-water interface by controlling the solute/solvent ratio. The self-assembled film comprises of uniformly tiled nanosheets with size ∼1 μm and thicknesses∼60-100 nm. Using these films in a Pt/AZO/Ag structure, an atomic switch operation is realized. The switching mechanism is found to be governed by electrochemical metallization with nucleation as the rate-limiting step. Our results establish the protocol for large-scale device applications of AZO nanosheets for exploring advanced atomic switch-based neuromorphic systems.

Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film

Memristors have gained significant attention recently due to their unique ability to exhibit functionalities for brain-inspired neuromorphic computing. Here, we demonstrate a high-performance multifunctional memristor using a thin film of liquid-phase exfoliated (LPE) 2D MoS2 pinched between two electrodes. Nanoscale inspection of a solution-processed MoS2 thin film using scanning electron and scanning probe microscopies revealed the high-quality and defect-free nature. Systematic current-voltage (I-V) characterizations depict a facile, nonvolatile resistive switching behavior of our 2D MoS2 thin film device with a current On/Off ratio of 103 and energy cost of only a few picojoules. Excellent performance metrics, including at least 103 cycle endurance, 104 s retention, and switching speed down to a few nanoseconds, reflect robust high-performance data storage capability. Charge carriers trapping and detrapping at the sulfur vacancy defect sites in MoS2 nanosheets mainly display the resistive switching property, supported by the impedance analysis and theoretical fitting results. Multifunctionality is leveraged through implementing two-input logic gate operations, edge computation, and crucial adaptive learning via a Pavlov's dogs experiment. Overall, our solution-processed MoS2 memristor has the potential for tremendous future opportunities in integrated circuits and different computing paradigms, including energy-efficient neuromorphic computing hardware in artificial intelligence.

Buckling of a monolayer of platelike particles trapped at a fluid-fluid interface

Particles trapped at a fluid-fluid interface by capillary forces can form a monolayer that jams and buckles when subject to uniaxial compression. Here we investigate experimentally the buckling mechanics of monolayers of millimeter-sized rigid plates trapped at a planar fluid-fluid interface subject to uniaxial compression in a Langmuir trough. We quantified the buckling wavelength and the associated force on the trough barriers as a function of the degree of compression. To explain the observed buckling wavelength and forces in the two-dimensional (2D) monolayer, we consider a simplified system composed of a linear chain of platelike particles. The chain system enables us to build a theoretical model which is then compared to the 2D monolayer data. Both the experiments and analytical model show that the wavelength of buckling of a monolayer of platelike particles is of the order of the particle size, a different scaling from the one usually reported for monolayers of spheres. A simple model of buckling surface pressure is also proposed, and an analysis of the effect of the bending rigidity resulting from a small overlap between nanosheet particles is presented. These results can be applied to the modeling of the interfacial rheology and buckling dynamics of interfacial layers of 2D nanomaterials.

Graphene-Based Transparent Flexible Strain Gauges with Tunable Sensitivity and Strain Range

Monolayers of graphene oxide, assembled into densely packed sheets at an immiscible hexane/water interface, form transparent conducting films on polydimethylsiloxane membranes after reduction in hydroiodic acid (HI) vapor to reduced graphene oxide (rGO). Prestraining and relaxing the membranes introduces cracks in the rGO film. Subsequent straining opens these cracks and induces piezoresistivity, enabling their application as transparent strain gauges. The sensitivity and strain range of these gauges is controlled by the cracked film structure that is determined by the reducing conditions used in manufacture. Reduction for 30 s in HI vapor leads to an array of parallel cracks that do not individually span the membrane. These cracks do not extend on subsequent straining, leading to a gauge with a usable strain range >0.2 and gauge factor (GF) at low strains ranging from 20 to 100, depending on the prestrain applied. The GF reduces with increasing applied strain and asymptotes to about 3, for all prestrains. Reduction for 60 s leads to cracks spanning the entire membrane and an increased film resistance but a highly sensitive strain gauge, with GF ranging from 800 to 16,000. However, the usable strain range reduces to <0.01. A simple equivalent resistor model is proposed to describe the behavior of both gauge types. The gauges show a repeatable and stable response with loading frequencies >1 kHz and have been used to detect human body strains in a simple e-skin demonstration.

Self-assembly of random networks of zirconium-doped manganese oxide nanoribbons and poly(3,4-ethylenedioxythiophene) flakes at the water/chloroform interface

Owing to their magnificent chemical and physical properties, transition metal-based heterostructures are potential materials for applications ranging from point-of-care diagnostics to sustainable energy technologies. The cryptomelane-type octahedral molecular sieves (K-OMS-2) are extensively studied porous materials with a hollandite (2 × 2 tunnel of dimensions 4.6 × 4.6 Å2) structure susceptible to the isovalent substitution of metal cations at the framework of MnO6 octahedral chains. Here we report a facile in situ synthesis of framework-level zirconium (Zr)-doped K-OMS-2 nanoribbons in poly(3,4-ethylenedioxythiophene) (PEDOT) nanoflakes at a water/chloroform interface at ambient conditions. An oxidant system of KMnO4 and ZrOCl2·8H2O initiated the polymerisation at temperatures ranging from 5° to 50 °C. The lattice distortions arising from the framework-level substitution of Mn4+ by Zr4+ in the K-OMS-2 structure were evidenced with powder X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and N2 adsorption-desorption studies. Transmission electron microscopic and mapping images confirmed that PEDOT/Zr-K-OMS-2 comprises a highly crystalline random network of two-dimensional PEDOT flakes and Zr-doped K-OMS-2 nanoribbons. In this regard, the proposed interfacial strategy affirms an in situ method for the morphological tuning of heterostructures on polymer supports at low temperatures.

Particle Size and Rheology of Silica Particle Networks at the Air-Water Interface

Silica nanoparticles find utility in different roles within the commercial domain. They are either employed in bulk within pharmaceutical formulations or at interfaces in anti-coalescing agents. Thus, studying the particle attributes contributing to the characteristics of silica particle-laden interfaces is of interest. The present work highlights the impact of particle size (i.e., 250 nm vs. 1000 nm) on the rheological properties of interfacial networks formed by hydrophobically modified silica nanoparticles at the air-water interface. The particle surface properties were examined using mobility measurements, Langmuir trough studies, and interfacial rheology techniques. Optical microscopy imaging along with Langmuir trough studies revealed the microstructure associated with various surface pressures and corresponding surface coverages (ϕ). The 1000 nm silica particle networks gave rise to a higher surface pressure at the same coverage compared to 250 nm particles on account of the stronger attractive capillary interactions. Interfacial rheological characterization revealed that networks with 1000 nm particles possess higher surface modulus and yield stress in comparison to the network obtained with 250 nm particles at the same surface pressure. These findings highlight the effect of particle size on the rheological characteristics of particle-laden interfaces, which is of importance in determining the stability and flow response of formulations comprising particle-stabilized emulsions and foams.

High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides

The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS₂) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here we report electrochemical exfoliation of large-aspect-ratio (>100) semiconducting flakes of tungsten diselenide (WSe₂) and tungsten disulfide (WS₂) as well as MoS₂ as a comparison. We use Langmuir-Schaefer coating to achieve highly aligned and conformal flake networks, with minimal mesoporosity (∼2-5%), at low processing temperatures (120 °C) and without acid treatments. This allows us to fabricate electrochemical transistors in ambient air, achieving average mobilities of μ_MoS2 ≈ 11 cm² V^-1 s^-1, μ_WS2 ≈ 9 cm² V^-1 s^-1, and μ_WSe2 ≈ 2 cm² V^-1 s^-1 with a current on/off ratios of I_on/I_off ≈ 2.6 × 10³, 3.4 × 10³, and 4.2 × 10⁴ for MoS₂, WS₂, and WSe₂, respectively. Moreover, our transistors display threshold voltages near ∼0.4 V with subthreshold slopes as low as 182 mV/dec, which are essential factors in maintaining power efficiency and represent a 1 order of magnitude improvement in the state of the art. Furthermore, the performance of our WSe₂ transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.

Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors

Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.

Size selection and thin-film assembly of MoS2 elucidates thousandfold conductivity enhancement in few-layer nanosheet networks

Printed electronics based on liquid-exfoliated nanosheet networks are limited by inter-nanosheet junctions and thick films which hinder field-effect gating. Here, few-layer molybdenum disulfide nanosheets are assembled by Langmuir deposition into thin films, and size selection is shown to lead to a thousandfold conductivity enhancement with potential applicability to all nanosheet networks.

Preparation of solution processed photodetectors comprised of two-dimensional tin(ii) sulfide nanosheet thin films assembled via the Langmuir-Blodgett method

We report the manufacture of fully solution processed photodetectors based on two-dimensional tin(ii) sulfide assembled via the Langmuir-Blodgett method. The method we propose can coat a variety of substrates including paper, Si/SiO2 and flexible polymer allowing for a potentially wide range of applications in future optoelectronic devices.