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D'Agosta P, Tumino F, Russo V, Li Bassi A, Casari CS. Interface coupling in Au-supported MoS 2-WS 2 heterobilayers grown by pulsed laser deposition. NANOSCALE 2023; 15:7493-7501. [PMID: 37017209 PMCID: PMC10134180 DOI: 10.1039/d3nr00614j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 03/27/2023] [Indexed: 06/19/2023]
Abstract
Van der Waals heterostructures of transition metal dichalcogenides (TMDs) are promising systems for engineering functional layered 2D materials with tailored properties. In this work, we study the growth of WS2/MoS2 and MoS2/WS2 heterobilayers by pulsed laser deposition (PLD) under ultra-high vacuum conditions. Using Au(111) as growth substrate, we investigated the heterobilayer morphology and structure at the nanoscale by in situ scanning tunneling microscopy. Our experiments show that the heterostructure growth can be controlled with high coverage and thickness sensitivity by tuning the number of laser pulses in the PLD process. Raman spectroscopy complemented our investigation, revealing the effect of the interaction with the metallic substrate on the TMD vibrational properties and a strong interlayer coupling between the MoS2 and WS2 layers. The transfer of the heterobilayers on a silica substrate via a wet etching process shows the possibility to decouple them from the native metallic substrate and confirms that the interlayer coupling is not substrate-dependent. This work highlights the potential of the PLD technique as a method to grow TMD heterostructures, opening to new perspectives in the synthesis of complex 2D layered materials.
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Affiliation(s)
- Paolo D'Agosta
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Francesco Tumino
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
- Department of Physics, Engineering Physics and Astronomy, Queen's University, 64 Bader Lane, Kingston, ON, Canada, K7L 3N6
| | - Valeria Russo
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Andrea Li Bassi
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Carlo S Casari
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
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2
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Chen D, Zhao Z, Chen G, Li T, Chen J, Ye Z, Lu J. Metal selenides for energy storage and conversion: A comprehensive review. Coord Chem Rev 2023. [DOI: 10.1016/j.ccr.2022.214984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
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3
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Kim HJ, Chong M, Rhee TG, Khim YG, Jung MH, Kim YM, Jeong HY, Choi BK, Chang YJ. Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth. NANO CONVERGENCE 2023; 10:10. [PMID: 36806667 PMCID: PMC9941396 DOI: 10.1186/s40580-023-00359-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 01/31/2023] [Indexed: 05/14/2023]
Abstract
In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques.
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Affiliation(s)
- Hyuk Jin Kim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Minsu Chong
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
| | - Tae Gyu Rhee
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Yeong Gwang Khim
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
- Department of Smart Cities, University of Seoul, Seoul, 02504, Republic of Korea.
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4
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Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures. ELECTRONICS 2022. [DOI: 10.3390/electronics11152401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided.
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Qu Y, Xu Y, Cao B, Wang Y, Wang J, Shi L, Xu K. Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene. ACS APPLIED MATERIALS & INTERFACES 2022; 14:2263-2274. [PMID: 34978790 DOI: 10.1021/acsami.1c18926] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Remote epitaxy is a very promising technique for the preparation of single-crystal thin films of flexibly transferred III-V group semiconductors. However, the epilayer nucleation mechanism of remote epitaxy and the epilayer-substrate interface interactions on both sides of graphene are not well-understood. In this study, remote homo- and heteroepitaxy of GaN nucleation layers (NLs) were performed by metal organic chemical vapor deposition on GaN, sapphire (Al2O3), and AlN substrates with transferred single-layer graphene, respectively. The results show that the interface damage of SLG/GaN at high temperature is difficult for us to achieve the remote homoepitaxy of GaN. Therefore, we explored the nucleation mechanism of remote heteroepitaxy of GaN on SLG/Al2O3 and SLG/AlN substrates. Nucleation density, surface coverage, diffusion coefficient, and scaled nucleation density were used to quantify the differences in nucleation information of GaN grown on different polar substrates. Using high-resolution X-ray diffraction and high-resolution transmission electron microscopy analysis, we revealed the interfacial orientation relationship and atomic arrangement distribution between the GaN NLs and substrates on both sides of the SLG. The electrostatic potential effect and adsorption ability of the substrates were further investigated by first-principles calculations based on density functional theory, revealing the principle that the substrate polarity affects the atomic nucleation density. The partial density of states shows that there is long-range orbital hybridization of the electronic states of the substrate and adsorbed atoms in remote epitaxy, and the crystal properties of the substrate play an important role in the in-plane orientation relationship of the NL and substrate across the SLG. The abovementioned results reveal the nature of remote epitaxy and broaden the perspective for the rapid and large-area preparation of single-crystal GaN films.
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Affiliation(s)
- Yipu Qu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
| | - Yu Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
| | - Bing Cao
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, People's Republic of China
| | - Yuning Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
| | - Jianfeng Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
| | - Lin Shi
- School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, People's Republic of China
| | - Ke Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
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Yin Y, Yi M, Guo W. High and Anomalous Thermal Conductivity in Monolayer MSi 2Z 4 Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45907-45915. [PMID: 34523910 DOI: 10.1021/acsami.1c14205] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The lattice thermal conductivity (κ) of a newly synthesized two-dimensional (2D) MoSi2N4 family and its associated abnormality are anatomized by ab initio phonon Boltzmann transport calculations. κ of MoSi2N4 and WSi2N4 is found to be over 400 W m-1 K-1 at 300 K. κ of MoSi2Z4 (Z = N, P, As) obeys Slack's rule of thumb, decreasing by 1 order of magnitude from Z = N to Z = As with 46 W m-1 K-1. However, in MSi2N4 (M = Mo, Cr, W, Ti, Zr, Hf), the variation of κ with respect to M is anomalous, that is, deviating from Slack's classic rule. For M in the same group, κ of MSi2N4 is insensitive to the average atomic mass, Debye temperature, phonon group velocity, and bond strength owing to the similar phonon structure and scattering rates. MSi2N4 with heavy group-VIB M even possesses a 3-4 times higher κ than that with light group-IVB M due to its much stronger M-N and exterior Si-N bonds and thus 1 order of magnitude lower phonon scattering rates. Nevertheless, this abnormality could be traced to an interplay of certain basic vibrational properties including the bunching strength and flatness of acoustic branches and their nearby optical branches, which lie outside of the conventional guidelines by Slack. This work predicts high κ of 2D MSi2Z4 for thermal management and provides microscopic insights into deciphering the anomalous κ of layered 2D structures.
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Affiliation(s)
- Yan Yin
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
| | - Min Yi
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Wanlin Guo
- State Key Lab of Mechanics and Control of Mechanical Structures & Key Lab for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science &Institute of Nanoscience & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China
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7
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Liu C, Lin YC, Yoon M, Yu Y, Puretzky AA, Rouleau CM, Chisholm MF, Xiao K, Eres G, Duscher G, Geohegan DB. Understanding Substrate-Guided Assembly in van der Waals Epitaxy by in Situ Laser Crystallization within a Transmission Electron Microscope. ACS NANO 2021; 15:8638-8652. [PMID: 33929816 DOI: 10.1021/acsnano.1c00571] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Understanding the bottom-up synthesis of atomically thin two-dimensional (2D) crystals and heterostructures is important for the development of new processing strategies to assemble 2D heterostructures with desired functional properties. Here, we utilize in situ laser-heating within a transmission electron microscope (TEM) to understand the stages of crystallization and coalescence of amorphous precursors deposited by pulsed laser deposition (PLD) as they are guided by 2D crystalline substrates into van der Waals (vdW) epitaxial heterostructures. Amorphous clusters of tungsten selenide were deposited by PLD at room temperature onto graphene or MoSe2 monolayer crystals that were suspended on TEM grids. The precursors were then stepwise evolved into 2D heterostructures with pulsed laser heating treatments within the TEM. The lattice-matching provided by the MoSe2 substrate is shown to guide the formation of large-domain, heteroepitaxial vdW WSe2/MoSe2 bilayers both during the crystallization process via direct templating and after crystallization by assisting the coalescence of nanosized domains through nonclassical particle attachment processes including domain rotation and grain boundary migration. The favorable energetics for domain rotation induced by lattice matching with the substrate were understood from first-principles calculations. These in situ TEM studies of pulsed laser-driven nonequilibrium crystallization phenomena represent a transformational tool for the rapid exploration of synthesis and processing pathways that may occur on extremely different length and time scales and lend insight into the growth of 2D crystals by PLD and laser crystallization.
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Affiliation(s)
- Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yu-Chuan Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mina Yoon
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Matthew F Chisholm
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gyula Eres
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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Jiang X, Chen F, Zhao S, Su W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm 2021. [DOI: 10.1039/d1ce01289d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.
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Affiliation(s)
- Xia Jiang
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Shichao Zhao
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
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