Terahertz Surface Emission from MoSe2 at the Monolayer Limit

Significant Enhancement in THz Emission and Piezoelectricity in Atomically Thin Nb-Doped MoS2

A significantly enhanced THz radiation generation from femtosecond photoexcited MoS2 layers due to Nb-doping is reported here. Different microscopic mechanisms involved in the THz photocurrent generation vary in their relative contributions in the two cases of photoexcitation, i.e., above and below the electronic bandgap of the layers. For a moderate Nb-doping level of just ∼0.05%, we have observed a multifold enhancement in the THz emission for the case of the above bandgap excitation, which is, though, nearly 1.5 times for the case of the below bandgap excitation of the monolayer MoS2. Alongside the difference in THz generation efficiency, the THz pulse polarity is also reversed at the above bandgap excitation of the Nb-doped layers, consequent to the reversed surface depletion field. Except for a slightly smaller difference in the THz enhancement factor, all the observations are reproducible in the bilayers as well to imply a weaker inversion symmetry and reduced screening of the surface depletion field due to Nb-doping. Furthermore, we employed pristine MoS2 and Nb-doped MoS2 monolayers to fabricate piezoelectric nanogenerator devices. Like enhancement in the ultrafast THz emission, the piezoelectric performance of the nanogenerator, fabricated with the Nb-doped MoS2 monolayer is also increased by a similar factor.

Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy

Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.

Highly Efficient Spintronic Terahertz Emitter Utilizing a Large Spin Hall Conductivity of Type-II Dirac Semimetal PtTe2

The remarkable spin-charge interconversion ability of transition metal dichalcogenides (TMDs) makes them promising candidates for spintronic applications. Nevertheless, their potential as spintronic terahertz (THz) emitters (STEs) remains constrained mainly due to their sizable resistivity and low spin Hall conductivity (SHC), which consequently result in modest THz emission. In this work, the TMD PtTe2, a type-II Dirac semimetal is effectively utilized to develop efficient STEs. This high efficiency primarily results from the large SHC of PtTe2, stemming from its low resistivity and significant spin-to-charge conversion efficiency, attributed to surface states and the local Rashba effect in addition to the inverse spin Hall effect. Remarkably, the peak THz emission from PtTe2/Co-STE exceeds that of Pt/Co-STE by ∼15% and is nearly double that of a similarly thick Pt/Co-STE. The efficient THz emission in the PtTe2/Co heterostructure opens new possibilities for utilizing the semimetal TMDs for developing THz emitters.

Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor

Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials-the Janus transition metal dichalcogenides in the 1 T' phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T' MoSSe (e.g., > 50 times higher than 2H MoS2 for 18th order harmonic generation; > 20 times higher than 2H MoS2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.

Intermediate State between MoSe2 and Janus MoSeS during Atomic Substitution Process

Janus transition metal dichalcogenides (TMDCs), with dissimilar chalcogen atoms on each side of TMDCs, have garnered considerable research attention because of the out-of-plane intrinsic polarization in monolayer TMDCs. Although a plasma process has been proposed for synthesizing Janus TMDCs based on the atomic substitution of surface atoms at room temperature, the formation dynamics and intermediate electronic states have not been completely examined. In this study, we investigated the intermediate state between MoSe₂ and Janus MoSeS during plasma processing. Atomic composition analysis and atomic-scale structural observations revealed the intermediate partially substituted Janus (PSJ) structure. Combined with theoretical calculations, we successfully clarified the characteristic Raman modes in the intermediate PSJ structure. The PL exhibited discontinuous transitions that could not be explained by the theoretical calculations. These findings will contribute toward understanding the formation process and electronic-state modulation of Janus TMDCs.

Optical rectification and electro-optic sampling in quartz

We report the electro-optic sampling (EOS) response and the terahertz (THz) optical rectification (OR) of the z-cut α-quartz. Due to its small effective second-order nonlinearity, large transparency window and hardness, freestanding thin quartz plates can faithfully measure the waveform of intense THz pulses with MV/cm electric-field strength. We show that both its OR and EOS responses are broad with extension up to ∼8 THz. Strikingly, the latter responses are independent of the crystal thickness, a plausible indication of dominant surface contribution to the total second-order nonlinear susceptibility of quartz at THz frequencies. Our study introduces the crystalline quartz as a reliable THz electro-optic medium for high field THz detection, and characterize its emission as a common substrate.

Ultrafast Drift Current Terahertz Emission Amplification in the Monolayer WSe2/Si Heterostructure

Two-dimensional transition metal dichalcogenides (TMDs) have great potential application for seamless on-chip integration due to their strong photon-electron-spin-valley coupling. However, the contact-free measurements of the valley-coupled photocurrent in TMDs is still challenging. Here, ultrafast terahertz emission spectroscopy is employed to investigate the photocurrent dynamics in monolayer WSe₂, and an interface-induced drift current amplification is found in the WSe₂/Si heterostructure. The amplification of terahertz emission comes from the photocurrent enlarged by band bending in the WSe₂ and Si junction, and the amplification ratio increase further near the valley resonant transition of WSe₂. In addition, the valley-momentum locked photocurrent in the WSe₂/Si heterostructure reserves the same chirality with monolayer WSe₂ at room temperature. These findings could provide a new method for manipulating valley-momentum locked photocurrent by photon helicity and open new avenues for TMD-based valley-polarized terahertz emission devices.

Hot Carrier Transfer in PtSe2/Graphene Enabled by the Hot Phonon Bottleneck

The charge transfer (CT) process of two-dimensional (2D) graphene/transition metal dichalcogenides (TMDs) heterostructures makes the photoelectric conversion ability of TMDs into a wider spectral range for the light harvester and photoelectric detector applications. However, the direct in situ investigation of the hot carrier transport in graphene/TMDs heterostructures has been rarely reported. Herein, using the optical pump and a terahertz (THz) probe (OPTP) spectroscopy, the CT process from graphene to five-layer PtSe₂ in the PtSe₂/graphene (P/G) heterostructure is demonstrated to be related to the pump fluence, which is enabled by the hot phonon bottleneck (HPB) effect in graphene. Furthermore, the frequency dispersion conductivity and the THz emission spectroscopy of the P/G heterostructure confirmed the existence of interlayer CT and its pump fluence-dependent behavior. Our results provide in-depth physical insights into the CT mechanism at the P/G van der Waals interface, which is crucial for further exploration of optoelectronic devices based on P/G heterostructures.

Light-Driven Spintronic Heterostructures for Coded Terahertz Emission

The extraordinary proliferation of digital coding metasurfaces turns the real-time manipulation of electromagnetic (EM) waves into reality and promotes the programmable operation of multifunctional equipment. However, current studies are mainly involved in the modulation of the transmission process, and little attention has been given to the control of EM wave generation, especially in the terahertz (THz) band. Here, we conceptually propose and experimentally demonstrate coded terahertz emission, which integrates the efficient generation and control of THz waves across a wide frequency band. For validation, two types of stripe-patterned ferromagnetic heterostructures with opposite spin Hall angles were utilized as coding units. The two distinct states in each coding unit (with two polarization or phase states of 0° and 180°) can be characterized as "0" and "1" digits, which can be switched by manipulating the optical field distribution of the pump beam. Such an ability to realize simultaneous terahertz coding and terahertz emission is essential for meeting the increasingly demanding requirements of integration and miniaturization. Our work endows ferromagnetic heterostructures with controllable spatial characteristics and benefits their applications in wireless communications and holographic imaging.

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, thep-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, thes-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.

Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride

Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.

Programmable patterned MoS2 film by direct laser writing for health-related signals monitoring

The two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising flexible electronic materials for strategic flexible information devices. Large-area and high-quality patterned materials were usually required by flexible electronics due to the limitation from the process of manufacturing and integration. However, the synthesis of large-area patterned 2D TMDs with high quality is difficult. Here, an efficient and powerful pulsed laser has been developed to synthesize wafer-scale MoS₂. The flexible strain sensor was fabricated using MoS₂ and showed high performance of low detection limit (0.09%), high gauge factor (1,118), and high stability (1,000 cycles). Besides, we demonstrated its applications in real-time monitoring of health-related physiological signals such as radial artery pressure, respiratory rate, and vocal cord vibration. Our findings suggest that the laser-assisted method is effective and capable of synthesizing wafer-scale 2D TMDs, which opens new opportunities for the next flexible electronic devices and wearable health monitoring.

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Wafer-scale patterned MoS₂ film has been synthesized by pulsed laser

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The MoS₂ film strain sensor shows low limit detection, high GF, and stability

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The healthy-related singles have been monitored by the MoS₂ film strain sensor

Large In-Plane Anisotropic Terahertz Emission Induced by Asymmetric Polarization in Low-Symmetric PdSe2

Palladium diselenide (PdSe₂) exhibits air stability, low symmetry, and high carrier mobility, resulting in unique in-plane anisotropy for polarized optoelectronic devices. However, the relationship of the symmetry and the terahertz (THz) radiation remains elusive yet significant for both the THz source in technology and nonlinear optical physics in science. Herein, we observed large in-plane anisotropic THz radiation from multilayer PdSe₂ under femtosecond laser excitation. The THz emission demonstrates 2α dependence on the optical polarization angle from the resonant optical rectification combined with a background from the photocarrier acceleration under the surface depletion field. Interestingly, the in-plane THz emission along and perpendicular to the puckered direction demonstrates large anisotropy. Furthermore, the THz time-domain signals exhibit reversed polarities along the positive and negative puckered directions. This asymmetric polarization could relate to the bonding of Pd-Se, resulting in the unidirectional photon-induced current. Our results bridge the gap between the low-symmetry two-dimensional materials and the THz technology, which could promote the development of THz-polarized devices based on low-symmetry layered materials.