Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter

Scanning Electrochemical Probe Lithography for Ultra-Precision Machining of Micro-Optical Elements with Freeform Curved Surface

Two challenges should be overcome for the ultra-precision machining of micro-optical element with freeform curved surface: one is the intricate geometry, the other is the hard-to-machining optical materials due to their hardness, brittleness or flexibility. Here scanning electrochemical probe lithography (SECPL) is developed, not only to meet the machining need of intricate geometry by 3D direct writing, but also to overcome the above mentioned mechanical properties by an electrochemical material removal mode. Through the electrochemical probe a localized anodic voltage is applied to drive the localized corrosion of GaAs. The material removal rate is obtained as a function of applied voltage, motion rate, scan segment, etc. Based on the material removal function, an arbitrary geometry can be converted to a spatially distributed voltage. Thus, a series of micro-optical element are fabricated with a machining accuracy in the scale of 100 s of nanometers. Notably, the spiral phase plate shows an excellent performance to transfer parallel light to vortex beam. SECPL demonstrates its excellent controllability and accuracy for the ultra-precision machining of micro-optical devices with freeform curved surface, providing an alternative chemical approach besides the physical and mechanical techniques.

Ultrafast Solid-State Electrochemical Imprinting Utilizing Polymer Electrolyte Membrane Stamps for Static/Dynamic Structural Coloration and Letter Encryption

Micro and nanopatterned surfaces hold potential for various applications, such as wettability control, antibiofouling, and optical components. However, conventional patterning processes are characterized by complexity, high costs, and environmental burdens because of the use of resists. Therefore, this paper proposes facile and ultrafast electrochemical imprinting employing a polymer electrolyte membrane (PEM) stamp for achieving micro and nanoscale patterning on Si surfaces. The solid-state electrochemical process efficiently generates oxide and hydrated oxide (Si-OH) patterns within several seconds at room temperature in a dry ambient environment. The formed oxide pattern can be employed as an etching mask to prepare diffraction gratings with diverse high-resolution (≈100 nm) patterns utilizing the dry PEM stamp. The resulting oxide pattern on the Si surface exhibits instantaneous structural coloration upon exposure to humid air, attributable to the formation of a water microdroplet array on the oxide pattern. The oxide pattern is successfully applied for dynamic diffraction grating and letter encryption. The proposed solid-state electrochemical oxidation scheme based on a PEM stamp, which eliminates the need for liquid electrolyte and resist, represents a simple and ultrafast process with a time cost of a few seconds, characterized by low processing costs and environmental impact.

Ultrasonic-Assisted Electrochemical Nanoimprint Lithography: Forcing Mass Transfer to Enhance the Localized Etching Rate of GaAs

Electrochemical nanoimprint lithography (ECNL) has emerged as a promising technique for fabricating three-dimensional micro/nano-structures (3D-MNSs) directly on semiconductor wafers. This technique is based on a localized corrosion reaction induced by the contact potential across the metal/semiconductor boundaries. The anodic etching of semiconductor and the cathodic reduction of electron acceptors occur at the metal/semiconductor/electrolyte interface and the Pt mold surface, respectively. However, the etching rate is limited by the mass transfer of species in the ultrathin electrolyte layer between the mold and the workpiece. To overcome this challenge, we introduce the ultrasonics effect into the ECNL process to facilitate the mass exchange between the ultrathin electrolyte layer and the bulk solution, thereby improving the imprinting efficiency. Experimental investigations demonstrate a positive linear relationship between the reciprocal of the area duty ratio of the mold and the imprinting efficiency. Furthermore, the introduction of ultrasonics improves the imprinting efficiency by approximately 80 %, irrespective of the area duty ratio. The enhanced imprinting efficiency enables the fabrication of 3D-MNSs with higher aspect ratios, resulting in a stronger light trapping effect. These results indicate the prospective applications of ECNL in semiconductor functional devices, such as photoelectric detection and photovoltaics.

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects

The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, thep-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, thes-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.