Nonfullerene-Based Organic Photodetectors for Ultrahigh Sensitivity Visible Light Detection

Green-Solvent-Processed High-Performance Broadband Organic Photodetectors

Solution-processed organic photodetectors with broadband activity have been demonstrated with an environmentally benign solvent, ortho-xylene (o-xylene), as the processing solvent. The organic photodetectors employ a wide band gap polymer donor PBDB-T and a narrow band gap small-molecule non-fullerene acceptor CO1-4F, both dissolvable in o-xylene at a controlled temperature. The o-xylene-processed devices have shown external quantum efficiency of up to 70%, surpassing the counterpart processed with chlorobenzene. With a well-suppressed dark current, the device can also present a high specific detectivity of over 1012 Jones at -2 V within practical operation frequencies and is applicable for photoplethysmography with its fast response. These results further highlight the potential of green-solvent-processed organic photodetectors as a high-performing alternative to their counterparts processed in toxic chlorinated solvents without compromising the excellent photosensing performance.

Enhanced sub-1 eV detection in organic photodetectors through tuning polymer energetics and microstructure

One of the key challenges facing organic photodiodes (OPDs) is increasing the detection into the infrared region. Organic semiconductor polymers provide a platform for tuning the bandgap and optoelectronic response to go beyond the traditional 1000-nanometer benchmark. In this work, we present a near-infrared (NIR) polymer with absorption up to 1500 nanometers. The polymer-based OPD delivers a high specific detectivity D^* of 1.03 × 10¹⁰ Jones (-2 volts) at 1200 nanometers and a dark current J_d of just 2.3 × 10^-6 ampere per square centimeter at -2 volts. We demonstrate a strong improvement of all OPD metrics in the NIR region compared to previously reported NIR OPD due to the enhanced crystallinity and optimized energy alignment, which leads to reduced charge recombination. The high D^* value in the 1100-to-1300-nanometer region is particularly promising for biosensing applications. We demonstrate the OPD as a pulse oximeter under NIR illumination, delivering heart rate and blood oxygen saturation readings in real time without signal amplification.

Efficient Near-Infrared Organic Photodetectors with Spectral Response up to 1600 nm for Accurate Alcohol Concentration Detection

The development of near-infrared organic photodetectors (NIR-OPDs) in 1000-1700 nm is essential for medical monitoring, food quality inspection, machine vision, and biomedical imaging. However, when solving the high dark current density (J_D) in bulk-heterojunction (BHJ) NIR-OPDs based on narrow-bandgap systems, it is often accompanied by photocurrent loss, which is a great challenge in achieving high-performance NIR-OPDs. Here, an ideal hybrid pseudo-PHJ (planar-heterojunction)/BHJ structure is proposed to overcome this challenge, which is introducing the N2200 layer between the cathode and BHJ. The introduction of the N2200 raises the external charge injection barrier and reduces the trap density, thus achieving significant suppression of J_D (6.22 × 10^-7 A cm^-2 at -0.2 V bias, about 2 orders of magnitude lower compared to the BHJ NIR-OPDs). Meanwhile, the hybrid structure combines the advantages of PHJ and BHJ, thus maintaining a high photocurrent, resulting in responsivity and detectivity of 18.71 mA W^-1 and 4.19 × 10¹⁰ Jones, respectively, at 1400 nm at -0.2 V bias, which is superior to the performance of BHJ NIR-OPDs. And the hybrid structured NIR-OPDs are proven to rapidly quantify the alcohol content of mixtures to within 2% accuracy, which exhibits great potential for application in the food and pharmaceutical industries.

Low Dark Current Organic Photodetectors Utilizing Highly Cyanated Non-fullerene Acceptors

Organic materials combining high electron affinity with strong absorption in the visible spectrum are of interest for photodetector applications. In this study, we report two such molecular semiconductors, based upon an acceptor-donor-acceptor (A-D-A) approach. Coupling of an acceptor end group, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT), with a donor cyclopentadithiophene core affords materials with a band gap of 1.5 eV and low-lying LUMO levels around -4.2 eV. Both materials were readily synthesized by a one-pot nucleophilic displacement of a fluorinated precursor by cyanide. The two acceptors only differ in the nature of the solubilizing alkyl chain, which is either branched 2-ethyl hexyl (EH-TCNBT) or linear octyl (O-TCNBT). Both acceptors were blended with polymer donor PTQ10 as an active layer in OPDs. Significant device differences were observed depending on the alkyl chain, with the branched acceptor giving the optimum performance. Both acceptors exhibited very low dark current densities, with values up to 10^-5 mA cm^-2 at -2 V, highlighting the potential of the highly cyanated cores (TCNBT) as acceptor materials.

4nπ Stable Multitasking Azapentacene: Acidochromism, Hole Mobility, and Visible Light Photoresponse

Herein, we describe the synthesis, characterization, and optoelectronic investigation of a stable 4nπ dihydrotetraazapentacene derivative. The neutral dihydrotetraazapentacene contains a 24π-conjugated N-heteroacene core with two phenyl pendants appended thereof. The exceptional stability of this formally antiaromatic π-system is attributed to the fused dihydropyrazine ring, which has ethenamine (enamine) conjugations, and hence, the π-electrons delocalize over the nearly planar azapentacene core to endow with a global aromatic characteristic. The embedded dihydropyrazine also offers an additional Clar's sextet with enhanced aromaticity. The present dihydrotetraazapentacene can be considered as a multitasking N-heteroacene, which showed photoresponsive nature under visible light illumination, acidochromism in solution, and p-type charge transport with an appreciable field-effect hole mobility of 0.02 cm² V^-1 s^-1 and a bulk p-type mobility of 0.98 × 10^-4 cm² V^-1 s^-1 in the space charge-limited regime of operation measured in the hole-only device. Nucleus-independent chemical shift calculation, anisotropy of the induced current density plot, and anisotropic mobility calculation were performed to support the experimental findings.

Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector

With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM–based OPDs with a broad bandwidth (350–950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC₇₁BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC₇₁BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10⁻⁹ A cm⁻²) under reverse bias at −1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W^–1, at −1.5 V), and high detectivity (1.10 × 10¹³ Jones, under a reverse bias of −1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.

Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW^-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW^-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

Circularly Polarized Photodetectors Based on Chiral Materials: A Review

Circularly polarized light (CPL) plays an important role in many photonic techniques, including tomographic scanning based on circular polarization ellipsometry, optical communication and information of spin, and quantum-based optical calculation and information processing. To fully exploit the functions of CPL in these fields, integrated photoelectric sensors capable of detecting CPL are essential. Photodetectors based on chiral materials can directly detect CPL due to their intrinsic optical activity, without the need to be coupled with polarizers and quarter-wave plates as in conventional photodetectors. This review summarizes the recent research progress in CPL photodetectors based on chiral materials. We first briefly introduce the CPL photodetectors based on different types of chiral materials and their working principles. Finally, current challenges and future opportunities in the development of CPL photodetectors are prospected.

Enhanced Static and Dynamic Properties of Highly Miscible Fullerene-Free Green-Selective Organic Photodetectors

We developed p-n junction organic photodetectors (OPDs) composed of a polymer donor and a nonfullerene acceptor (NFA) to increase both the responsivity (R) and detectivity (D*) while maintaining a narrow wavelength selectivity. The selection of the polymer donor and NFA with similar green (G) absorption is important for achieving G-wavelength selectivity in these OPDs, which differentiates them from current fullerene-based OPDs and NFA-based panchromatic absorption OPDs. In addition, mixing the polymer donor and asymmetric NFA was efficient toward increasing the miscibility and decreasing the interfacial energy difference of the blended films, resulting in the formation of a uniform and well-mixed nanomorphology in the photoconductive layer. Two-dimensional (2D) grazing incidence X-ray diffraction and Fourier-transform infrared spectroscopy revealed that the lamellar ordering of the polymer donor was enhanced in the blend film prepared with an asymmetric NFA, whereas the aggregation of a symmetric NFA in the blend films did not increase the lamellar ordering of the polymer donor. Consequently, we achieved an R value of 0.31 A/W and D* value of 2.0 × 10¹³ Jones with a full width at half-maximum value of 230 nm at -2 V and fast response time of 27 μs without any external bias in the asymmetric NFA-based OPDs. The enhancement in the lamellar ordering and miscibility of the blended films are crucial toward increasing the static and dynamic properties of OPDs.

Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation

Thin-film organic near-infrared (NIR) photodiodes can be essential building blocks in the rapidly emerging fields including the internet of things and wearable electronics. However, the demonstration of NIR organic photodiodes with not only high responsivity but also low dark current density that is comparable to that of inorganic photodiodes, for example, below 1 nA cm^-2 for silicon photodiodes, remains a challenge. In this work, we have demonstrated non-fullerene acceptor-based NIR photodiodes with an ultralow dark current density of 0.2 nA cm^-2 at -2 V by innovating on charge transport layers to mitigate the reverse charge injection and interfacial defect-induced current generation. The same device also shows a high external quantum efficiency approaching 70% at 850 nm and a specific detectivity of over 10¹³ Jones at wavelengths up to 940 nm. Furthermore, the versatility of our approach for mitigating dark current is demonstrated using a NIR photodetector utilizing different non-fullerene systems. Finally, the practical application of NIR organic photodiodes is demonstrated with an image sensor integrated on a silicon CMOS readout. This work provides new insight into the device stack design of low-dark current NIR organic photodiodes for weak light detection.

Ultra-Narrow-Band NIR Photomultiplication Organic Photodetectors Based on Charge Injection Narrowing

Ultra-narrow-band NIR photomultiplication organic photodetectors (PM-OPDs) were realized in ITO/PEDOT:PSS/active layers/Al based on an interfacial-trap-induced charge injection narrowing (CIN) concept. The rather less Bod Ethex-Hex (BEH) is imbedded in a polymer donor matrix to form large amounts of isolated electron traps. Trapped electrons in BEH close to an Al electrode will enforce hole-tunneling injection induced by interfacial band bending, resulting in a photomultiplication phenomenon. PM-OPDs with P3HT:BEH as the active layer exhibit a narrow response peak at 850 nm with a full-width at half-maximum (fwhm) of 27 nm as well as a rather weak response from 650 to 800 nm. The EQE of 29 700% at 850 nm was achieved in PM-OPDs by incorporating 0.02 wt % of F₆TCNNQ under -13 V of applied voltage. The rejection ratio (RR) of the optimized PM-OPDs with F₆TCNNQ is 11 for EQE_850 nm/EQE_700 nm and 10 for EQE_850 nm/EQE_750 nm, respectively. An EQE of 15 300% at 850 nm was achieved in the ternary PM-OPDs under -13 V of applied voltage, with markedly enhanced RRs of 44 for EQE_850 nm/EQE_700 nm and 30 for EQE_850 nm/EQE_750 nm.