1
|
Xu X, Fan C, He H, Ye Z. Epitaxial Growth of CsPbBr 3 Pyramids/CdS Nanobelt Heterostructures for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19742-19750. [PMID: 38563423 DOI: 10.1021/acsami.3c19282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskites have great potential for optoelectronic applications due to their high photoluminescence quantum yield, large absorption coefficient, great defect tolerance, and adjustable band gap. Perovskite heterostructures may further enhance the performance of optoelectronic devices. So far, however, most of perovskite heterostructures are fabricated by mechanical stacking or spin coating, which could introduce a large number of defects or impurities at the heterointerface owing to the random stacking process. Herein, we report the epitaxial growth of CsPbBr3 pyramids/CdS nanobelt heterostructures via a 2-step vapor deposition route. The CsPbBr3 triangular pyramids are well aligned on the surface of CdS nanobelts with the epitaxial relationships of (0-22)CsPbBr3||(1-20)CdS and (-211)CsPbBr3||(002)CdS. Time-resolved photoluminescence results reveal that effective charge transfer occurred at the heterointerface, which can be attributed to the type-II band arrangement. Theoretical simulations reveal that the unique CsPbBr3 pyramids/CdS nanobelt structure facilitates diminishing the reflection losses and enhancing the light absorption. The photodetector based on these CsPbBr3 pyramids/CdS nanobelt heterostructures exhibited an ultrahigh photoswitching ratio of 2.14 × 105, a high responsivity up to 4.07 × 104 A/W, a high detectivity reaching 1.36 × 1013 Jones, fast photoresponses (τrise = 472 μs and τdecay = 894 μs), low dark current, and suppressed hysteresis.
Collapse
Affiliation(s)
- Xing Xu
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421010, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
| | - Chao Fan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
| |
Collapse
|
2
|
Wang C, Bian Y, Liu K, Qin M, Zhang F, Zhu M, Shi W, Shao M, Shang S, Hong J, Zhu Z, Zhao Z, Liu Y, Guo Y. Strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors. Nat Commun 2024; 15:3123. [PMID: 38600179 PMCID: PMC11006893 DOI: 10.1038/s41467-024-47532-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/04/2024] [Indexed: 04/12/2024] Open
Abstract
Stretchable neuromorphic optoelectronics present tantalizing opportunities for intelligent vision applications that necessitate high spatial resolution and multimodal interaction. Existing neuromorphic devices are either stretchable but not reconcilable with multifunctionality, or discrete but with low-end neurological function and limited flexibility. Herein, we propose a defect-tunable viscoelastic perovskite film that is assembled into strain-insensitive quasi-continuous microsphere morphologies for intrinsically stretchable neuromorphic vision-adaptive transistors. The resulting device achieves trichromatic photoadaptation and a rapid adaptive speed (<150 s) beyond human eyes (3 ~ 30 min) even under 100% mechanical strain. When acted as an artificial synapse, the device can operate at an ultra-low energy consumption (15 aJ) (far below the human brain of 1 ~ 10 fJ) with a high paired-pulse facilitation index of 270% (one of the best figures of merit in stretchable synaptic phototransistors). Furthermore, adaptive optical imaging is achieved by the strain-insensitive perovskite films, accelerating the implementation of next-generation neuromorphic vision systems.
Collapse
Affiliation(s)
- Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingchao Shao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shengcong Shang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiaxin Hong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
| |
Collapse
|
3
|
Kim T, Yun KS. Photonic synaptic transistors with new electron trapping layer for high performance and ultra-low power consumption. Sci Rep 2023; 13:12583. [PMID: 37537256 PMCID: PMC10400596 DOI: 10.1038/s41598-023-39646-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 07/28/2023] [Indexed: 08/05/2023] Open
Abstract
Photonic synaptic transistors are being investigated for their potential applications in neuromorphic computing and artificial vision systems. Recently, a method for establishing a synaptic effect by preventing the recombination of electron-hole pairs by forming an energy barrier with a double-layer consisting of a channel and a light absorption layer has shown effective results. We report a triple-layer device created by coating a novel electron-trapping layer between the light-absorption layer and the gate-insulating layer. Compared to the conventional double-layer photonic synaptic structure, our triple-layer device significantly reduces the recombination rate, resulting in improved performance in terms of the output photocurrent and memory characteristics. Furthermore, our photonic synaptic transistor possesses excellent synaptic properties, such as paired-pulse facilitation (PPF), short-term potentiation (STP), and long-term potentiation (LTP), and demonstrates a good response to a low operating voltage of - 0.1 mV. The low power consumption experiment shows a very low energy consumption of 0.01375 fJ per spike. These findings suggest a way to improve the performance of future neuromorphic devices and artificial vision systems.
Collapse
Affiliation(s)
- Taewoo Kim
- Department of Electronic Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Korea
| | - Kwang-Seok Yun
- Department of Electronic Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Korea.
| |
Collapse
|
4
|
Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
Collapse
Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| |
Collapse
|
5
|
Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
Collapse
Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| |
Collapse
|
6
|
Aminzare M, Jiang J, Mandl GA, Mahshid S, Capobianco JA, Dorval Courchesne NM. Biomolecules incorporated in halide perovskite nanocrystals: synthesis, optical properties, and applications. NANOSCALE 2023; 15:2997-3031. [PMID: 36722934 DOI: 10.1039/d2nr05565a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Halide perovskite nanocrystals (HPNCs) have emerged at the forefront of nanomaterials research over the past two decades. The physicochemical and optoelectronic properties of these inorganic semiconductor nanoparticles can be modulated through the introduction of various ligands. The use of biomolecules as ligands has been demonstrated to improve the stability, luminescence, conductivity and biocompatibility of HPNCs. The rapid advancement of this field relies on a strong understanding of how the structure and properties of biomolecules influences their interactions with HPNCs, as well as their potential to extend applications of HPNCs towards biological applications. This review addresses the role of several classes of biomolecules (amino acids, proteins, carbohydrates, nucleotides, etc.) that have shown promise for improving the performance of HPNCs and their potential applications. Specifically, we have reviewed the recent advances on incorporating biomolecules with HP nanomaterials on the formation, physicochemical properties, and stability of HP compounds. We have also shed light on the potential for using HPs in biological and environmental applications by compiling some recent of proof-of-concept demonstrations. Overall, this review aims to guide the field towards incorporating biomolecules into the next-generation of high-performance HPNCs for biological and environmental applications.
Collapse
Affiliation(s)
- Masoud Aminzare
- Department of Chemical Engineering, McGill University, 3610 University Street, Wong Building, Room 4180, Montréal, QC, H3A 0C5, Canada.
| | - Jennifer Jiang
- Department of Chemical Engineering, McGill University, 3610 University Street, Wong Building, Room 4180, Montréal, QC, H3A 0C5, Canada.
| | - Gabrielle A Mandl
- Department of Chemistry and Biochemistry and Centre for NanoScience Research, 7141 Rue Sherbrooke Ouest, Concordia University, Montreal, QC, H4B 1R6, Canada
| | - Sara Mahshid
- Department of Bioengineering, McGill University, 817 Sherbrooke Street West, Macdonald Engineering Building, Room 355, Montréal, QC, H3A 0C3, Canada
| | - John A Capobianco
- Department of Chemistry and Biochemistry and Centre for NanoScience Research, 7141 Rue Sherbrooke Ouest, Concordia University, Montreal, QC, H4B 1R6, Canada
| | - Noémie-Manuelle Dorval Courchesne
- Department of Chemical Engineering, McGill University, 3610 University Street, Wong Building, Room 4180, Montréal, QC, H3A 0C5, Canada.
| |
Collapse
|
7
|
Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing. NANO MATERIALS SCIENCE 2023. [DOI: 10.1016/j.nanoms.2023.01.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
|
8
|
Yang R, Yin L, Lu J, Lu B, Pi X, Li S, Zhuge F, Lu Y, Shao W, Ye Z. Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46866-46875. [PMID: 36194768 DOI: 10.1021/acsami.2c14029] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Neuromorphic computing, which mimics brain function, can address the shortcomings of the "von Neumann" system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the advantages of low power consumption, low latency, and high stability. We demonstrate amorphous InAlZnO-based light-stimulated artificial synaptic devices with a thin-film transistor structure. The devices exhibit fundamental synaptic properties, including excitatory postsynaptic current, paired-pulse facilitation (PPF), and short-term plasticity to long-term plasticity conversion under light stimulation. The PPF index stimulated by 375 nm light is 155.9% when the time interval is 0.1 s. The energy consumption of each synaptic event is 2.3 pJ, much lower than that of ordinary MOS devices and other optical-controlled synaptic devices. The relaxation time constant reaches 277 s after only 10 light spikes, which shows the great synaptic plasticity of the device. In addition, we simulated the learning-forgetting-relearning-forgetting behavior and learning efficiency of human beings under different moods by changing the gate voltage. This work is expected to promote the development of high-performance optoelectronic synaptic devices for neuromorphic computing.
Collapse
Affiliation(s)
- Ruqi Yang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Lei Yin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Jianguo Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhoum, Zhejiang University, Wenzhou325006, China
| | - Bojing Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Siqin Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
| | - Yangdan Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Wenyi Shao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhoum, Zhejiang University, Wenzhou325006, China
| |
Collapse
|
9
|
Wang W, Gao S, Wang Y, Li Y, Yue W, Niu H, Yin F, Guo Y, Shen G. Advances in Emerging Photonic Memristive and Memristive-Like Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105577. [PMID: 35945187 PMCID: PMC9534950 DOI: 10.1002/advs.202105577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Revised: 06/06/2022] [Indexed: 05/19/2023]
Abstract
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.
Collapse
Affiliation(s)
- Wenxiao Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Song Gao
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yaqi Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yang Li
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Wenjing Yue
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Hongsen Niu
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Feifei Yin
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yunjian Guo
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Guozhen Shen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
| |
Collapse
|
10
|
Li YT, Li JZ, Ren L, Xu K, Chen S, Han L, Liu H, Guo XL, Yu DL, Li DH, Ding L, Peng LM, Ren TL. Light-Controlled Reconfigurable Optical Synapse Based on Carbon Nanotubes/2D Perovskite Heterostructure for Image Recognition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:28221-28229. [PMID: 35679528 DOI: 10.1021/acsami.2c05818] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) halide perovskite material is characterized by a mixed conducting behavior that possesses both electronic and ionic conductivity. The study on the influence of the light on ion migration in the 2D perovskite is helpful to improve the performance of perovskite-based optoelectronic devices. Here, we constructed an exfoliated 2D perovskite/carbon nanotubes (CNTs) heterostructure optical synapse, in which CNTs can be used as nanoprobes to qualitatively observe the ion aggregation or dissipation process in 2D perovskite, and found that light significantly changes the memory curve of the reconfigurable optical synapses. Through the molecular dynamic simulation, the dynamic process of ion migration in the heterostructure was simulated and the electrostatic interaction effect of nonequilibrium charge distribution of CNTs on iodide ion was demonstrated. Finally, an effective light-controlled process was realized through the synapses, which in situ regulated the performance of the weight-value discretized BP (WD-BP) neural network. This work lays a foundation for the future development of intelligent nano-optoelectronic devices.
Collapse
Affiliation(s)
- Yu-Tao Li
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
- School of Integrated Circuits, The Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jun-Ze Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Li Ren
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Kui Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Sheng Chen
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Lei Han
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Hang Liu
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Xiao-Liang Guo
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Du-Li Yu
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - De-Hui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Tian-Ling Ren
- School of Integrated Circuits, The Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| |
Collapse
|
11
|
Shi J, Jie J, Deng W, Luo G, Fang X, Xiao Y, Zhang Y, Zhang X, Zhang X. A Fully Solution-Printed Photosynaptic Transistor Array with Ultralow Energy Consumption for Artificial-Vision Neural Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200380. [PMID: 35243701 DOI: 10.1002/adma.202200380] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 02/20/2022] [Indexed: 06/14/2023]
Abstract
Photosynaptic organic field-effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new-generation visual prosthetics and artificial perception systems. Here, a fully solution-printed photosynaptic OFET (FSP-OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge-carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP-OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light-perception capabilities. Consequently, the FSP-OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07-34 fJ per spike in short-term plasticity and 0.41-19.87 fJ per spike in long-term plasticity, both approaching the energy efficiency of biological synapses (1-100 fJ). Moreover, an artificial optic-neural network made from an 8 × 8 FSP-OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP-OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.
Collapse
Affiliation(s)
- Jialin Shi
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau SAR, 999078, P. R. China
| | - Wei Deng
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Gan Luo
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiaochen Fang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yanling Xiao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yujian Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xiaohong Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| |
Collapse
|
12
|
Jiang L, Xu C, Wu X, Zhao X, Zhang L, Zhang G, Wang X, Qiu L. Deep Ultraviolet Light Stimulated Synaptic Transistors Based on Poly(3-hexylthiophene) Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11718-11726. [PMID: 35213133 DOI: 10.1021/acsami.1c23986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Deep ultraviolet (DUV)-light-stimulated artificial synaptic devices exhibit potential applications in various disciplines including intelligent military monitoring, biological and medical analysis, flame detection, etc. Along these lines, we report here a DUV-light-stimulated synaptic transistor fabricated on a poly(3-hexylthiophene) (P3HT) ultrathin film that responds selectively to DUV light. Significantly, our devices have the ability to successfully simulate various synapse-like behaviors including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), STM-to-LTM transition, and learning and forgetting behaviors. Moreover, the proposed artificial synaptic structures were also fabricated on flexible poly(ethylene terephthalate) (PET) substrates and also successfully simulated typical synaptic behaviors, which could be of great importance for wearable applications.
Collapse
Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xue Zhao
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Lijun Zhang
- College of Light-Textile Engineering and Art, Anhui Agricultural University, Hefei, Anhui 230036, P. R. China
| | - Guobing Zhang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, and Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| |
Collapse
|
13
|
A Review on Solution-Processed Organic Phototransistors and Their Recent Developments. ELECTRONICS 2022. [DOI: 10.3390/electronics11030316] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Today, more disciplines are intercepting each other, giving rise to “cross-disciplinary” research. Technological advancements in material science and device structure and production have paved the way towards development of new classes of multi-purpose sensory devices. Organic phototransistors (OPTs) are photo-activated sensors based on organic field-effect transistors that convert incident light signals into electrical signals. The organic semiconductor (OSC) layer and three-electrode structure of an OPT offer great advantages for light detection compared to conventional photodetectors and photodiodes, due to their signal amplification and noise reduction characteristics. Solution processing of the active layer enables mass production of OPT devices at significantly reduced cost. The chemical structure of OSCs can be modified accordingly to fulfil detection at various wavelengths for different purposes. Organic phototransistors have attracted substantial interest in a variety of fields, namely biomedical, medical diagnostics, healthcare, energy, security, and environmental monitoring. Lightweight and mechanically flexible and wearable OPTs are suitable alternatives not only at clinical levels but also for point-of-care and home-assisted usage. In this review, we aim to explain different types, working mechanism and figures of merit of organic phototransistors and highlight the recent advances from the literature on development and implementation of OPTs for a broad range of research and real-life applications.
Collapse
|
14
|
Huang X, Guo Y, Liu Y. Perovskite photodetectors and their application in artificial photonic synapses. Chem Commun (Camb) 2021; 57:11429-11442. [PMID: 34642713 DOI: 10.1039/d1cc04447h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.
Collapse
Affiliation(s)
- Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| |
Collapse
|