Synthesis of Chemically Stable Ultrathin SiO2-Coated Core-Shell Perovskite QDs via Modulation of Ligand Binding Energy for All-Solution-Processed Light-Emitting Diodes

Damage-Free Silica Coating for Colloidal Nanocrystals Through a Proactively Water-Generating Amidation Reaction at High Temperature

Silica is a promising shell coating material for colloidal nanoparticles due to its excellent chemical inertness and optical transparency. To encapsulate high-quality colloidal nanocrystals with silica shells, the silane coupling hydrolysis is currently the most effective approach. However, this reaction requires water, which often adversely affects the intrinsic physicochemical properties of nanocrystals. Achieving a damage-free silica encapsulation process to nanocrystals by hydrolysis is a huge challenge. Here, a novel strategy is developed to coat colloidal nanocrystals with a denser silica shell via a proactively water-generating reaction at high temperature. In this work, water molecules are continuously and proactively released into the reaction system through the amidation reaction, followed by in situ hydrolysis of silane, completely avoiding the impacts of water on nanocrystals during the silica coating process. In this work, water sensitive perovskite nanocrystals (CsPbBr3) are selected as the typical colloidal nanocrystals for silica coating. Notably, this high-temperature in situ encapsulation technology greatly improves the optical properties of nanocrystals, and the silica shells exhibit a denser structure, providing nanocrystals with better protection. This method overcomes the challenge of the influence of water on nanocrystals during the hydrolysis process, and provides an important reference for the non-destructive encapsulation of colloidal nanocrystals.

Organosilicon-Based Ligand Design for High-Performance Perovskite Nanocrystal Films for Color Conversion and X-ray Imaging

Perovskite nanocrystals (PNCs) bear a huge potential for widespread applications, such as color conversion, X-ray scintillators, and active laser media. However, the poor intrinsic stability and high susceptibility to environmental stimuli including moisture and oxygen have become bottlenecks of PNC materials for commercialization. Appropriate barrier material design can efficiently improve the stability of the PNCs. Particularly, the strategy for packaging PNCs in organosilicon matrixes can integrate the advantages of inorganic-oxide-based and polymer-based encapsulation routes. However, the inert long-carbon-chain ligands (e.g., oleic acid, oleylamine) used in the current ligand systems for silicon-based encapsulation are detrimental to the cross-linking of the organosilicon matrix, resulting in performance deficiencies in the nanocrystal films, such as low transparency and large surface roughness. Herein, we propose a dual-organosilicon ligand system consisting of (3-aminopropyl)triethoxysilane (APTES) and (3-aminopropyl)triethoxysilane with pentanedioic anhydride (APTES-PA), to replace the inert long-carbon-chain ligands for improving the performance of organosilicon-coated PNC films. As a result, strongly fluorescent PNC films prepared by a facile solution-casting method demonstrate high transparency and reduced surface roughness while maintaining high stability in various harsh environments. The optimized PNC films were eventually applied in an X-ray imaging system as scintillators, showing a high spatial resolution above 20 lp/mm. By designing this promising dual organosilicon ligand system for PNC films, our work highlights the crucial influence of the molecular structure of the capping ligands on the optical performance of the PNC film.

APTES and CTAB Synergistic Induce a Heterozygous CsPbBr3/Cs4PbBr6 Perovskite Composite and its Application on the Sensitive Fluorescent Detection of Iodide ions

Recently, all-inorganic halide perovskite quantum dots (IPQD) as a new fluorescent material with excellent fluorescence properties have attracted wide attention. However, their instability in polar solvents is the main factor hindering their application in analysis. Herein, a heterozygous perovskite (CsPbBr3/Cs4PbBr6) was simultaneously prepared and stabilized by a silylanization strategy using (3-aminopropyl)-triethoxysilane (APTES) and cetyltrimethyl ammonium bromide (CTAB) assisted precipitation encapsulation method. The synthesized CsPbBr3/Cs4PbBr6 emitted an independent fluorescence at 520 nm. The obtained CsPbBr3/Cs4PbBr6 exhibited good stability in ethanol/water mixtures. It was used as a fluorescent probe for sensitively detecting iodide ions (I-) by fluorescence quenching mechanism in the concentration range of 1 ~ 70.0 µM with the detection limit (LOD) of 0.83 µM (relative standard deviation (RSD) = 1.33%, n = 20). The simplicity and high selectivity of the proposed fluorescent analysis method were the prominent features. This work could be extended to the other target ion detection by a perovskite fluorescent quenching.

Enhanced Photoelectric Properties of CsPbBr3 by SiO2 and TiO2 Bilayer Heterostructures

CsPbBr3/SiO2 heterostructures were synthesized by the hydrolysis reaction of a mixture of CsPbBr3 nanocrystals (NCs) and (3-aminopropyl)triethoxysilane (APTS) in air. Compared with CsPbBr3 NCs, the CsPbBr3/SiO2 heterostructures exhibit stronger photoluminescence (PL) intensity, longer lifetime of PL (∼40.5 ns), and higher PL-quantum yield (PLQY, ∼86%). The carrier dynamics of CsPbBr3/SiO2 was detected by the transient absorption (TA) spectrum. The experimental results show that SiO2 passivates the surface traps of CsPbBr3 NCs and enhances the PL intensity. However, photoelectrochemical impedance spectra (PEIS) demonstrate that the impedance of CsPbBr3/SiO2 is higher than that of CsPbBr3 NCs, which reduces carrier transport and extraction. Because the application of CsPbBr3/SiO2 in optoelectronics is limited, CsPbBr3/SiO2/TiO2 heterostructures were synthesized by the further reaction of tetrabutyl titanate (TBT). The TiO2 coating can reduce the impedance of the CsPbBr3/SiO2. Importantly, ∼68% of the PL intensity of CsPbBr3/SiO2 is retained. Compared with CsPbBr3/SiO2 and CsPbBr3 NCs, the CsPbBr3/SiO2/TiO2 demonstrates faster carrier transport (κct = 2.4 × 109 s-1) and higher photocurrent density (J = 76 nA cm-2). In addition, CsPbBr3/SiO2/TiO2 shows good stability under (ultraviolet) UV irradiation, along with water stability and thermal stability. Therefore, the double protection approach can enhance the stability of CsPbBr3 NCs and tune the optoelectronic properties of CsPbBr3 NCs.

How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots

Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).

Improving the stability of perovskite nanocrystals via SiO2 coating and their applications

Lead halide perovskite nanocrystals (LHP NCs) with outstanding optical properties have been regarded as promising alternatives to traditional phosphors for lighting and next-generation display technology. However, the practical applications of LHP NCs are seriously hindered by their poor stability upon exposure to moisture, oxygen, light, and heat. Hence, various strategies have been proposed to solve this issue. In this review, we have focused our attention on improving the stability of LHP NCs via SiO2 coating because it has the advantages of simple operation, less toxicity, and easy repetition. SiO2 coating is classified into four types: (a) in situ hydrolytic coating, (b) mesoporous silica loading, (c) mediated anchoring, and (d) double coating. The potential applications of SiO2-coated LHP NCs in the field of optoelectronics, biology, and catalysis are presented to elucidate the reliability and availability of SiO2 coating. Finally, the future development and challenges in the preparation of SiO2-coated LHP NCs are analyzed in order to promote the commercialization process of LHP NC-related commodities.

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions. Colloidal atomic layer deposition (c-ALD) has been recently proposed as a methodology to grow hybrid materials including QDs and organic/inorganic oxide shells, which possess new functions compared to those of the as-synthesized QDs. Here, we demonstrate that ZnO shells can be grown on InP QDs obtained via two synthetic routes, which are the classical sylilphosphine-based route and the more recently developed aminophosphine-based one. We find that the ZnO shell increases the photoluminescence emission only in the case of aminophosphine-based InP QDs. We rationalize this result with the different chemistry involved in the nucleation step of the shell and the resulting surface defect passivation. Furthermore, we demonstrate that the ZnO shell prevents degradation of the InP QD suspension under ambient conditions by avoiding moisture-induced displacement of the ligands from their surface. Overall, this study proposes c-ALD as a methodology for the synthesis of alternative InP-based core@shell QDs and provides insight into the surface chemistry that results in both enhanced photoluminescence and stability required for application in optoelectronic devices and bioimaging.

All-inorganic lead halide perovskite nanocrystals applied in advanced display devices

Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.

Highly efficient silica coated perovskite nanocrystals with the assistance of ionic liquids for warm white LEDs

Given the inherent characteristics of defect-tolerant, tunable emission performance, and high extinction coefficient, lead halide perovskite nanocrystals (NCs) have attracted widespread attention as a promising material in optoelectronic fields. However, their poor structural stability greatly impedes their practical applications. Herein, a novel strategy for synthesizing stable CsPbBr₃@SiO₂ NCs via the hydrolytic polycondensation of (3-aminopropyl)triethoxysilane (APTES) in the presence of ionic liquids (ILs) is deliberately designed. The problems of fluorescence quenching and undesirable agglomeration of NCs resulting from ligand loss and surface erosion existing in common encapsulation methods can be effectively resolved. The fast and controllable growth of the SiO₂ shell around the CsPbBr₃ NCs is realized owing to the high polarity and hygroscopicity of the IL. Moreover, the dual effects of the IL for passivating the surface defects and avoiding the structural degradation of NCs during the hydrolysis process of APTES are demonstrated. As a result, CsPbBr₃@SiO₂ NCs with a high photoluminescence quantum yield of 85.7% and excellent stability are realized. Furthermore, this method proves to be a versatile tool to obtain CsPbX₃@SiO₂ NCs with different halide compositions, realizing a broad tunable wavelength from 421.2 nm to 651.6 nm. A warm white LED with a high color rending index was assembled through packaging CsPbBr₃@SiO₂ NCs and Cu-In-Zn-S/ZnS/PVP composites on a commercial blue chip. These findings are expected to facilitate the development of perovskite NCs, which provides access to their optoelectronic applications.

In situ interfacial passivation with an arylphosphine oxide and phosphonate electron transporting layer for efficient all-solution-processed PeQLEDs

Perovskite quantum dot light-emitting diodes (PeQLEDs) have emerged as a promising candidate for high-quality lightings and displays, where an electron transporting layer (ETL) is required to achieve balanced charge transport and thus high performance. However, the ETL is often thermally-deposited under vacuum, since the low-cost solution process would damage the underlying perovskite quantum dots (PeQDs). Here, we demonstrate efficient all-solution-processed PeQLEDs based on arylphosphine oxide (SPPO13) and phosphonate (TPPO) as the ETL. Benefitting from the coordination between PO and exposed Pb atoms, in situ interfacial passivation occurs during the solution deposition of SPPO13 or TPPO on PeQDs. As a result, bilayer films (PeQDs/ETL) exhibit improved photoluminescence quantum yields and prolonged lifetimes compared with single layer PeQDs. Correspondingly, all-solution-processed PeQLEDs are fabricated successfully via an orthogonal solvent strategy, revealing bright green emission with a promising current efficiency of 24.1 cd A^-1 (12.1 lm W^-1, 6.47%) and CIE coordinates of (0.12, 0.79).

4-Bromo-Butyric Acid-Assisted In Situ Passivation Strategy for Superstable All-Inorganic Halide Perovskite CsPbX3 Quantum Dots in Polar Media

A crucial challenge is to develop an in situ passivation treatment strategy for CsPbX₃ (CPX, X=Cl, Br, and I) quantum dots (QDs) and simultaneously retain their luminous efficiency and wavelength. Here, a facile method to significantly improve the stability of the CPX QDs via in situ crystallization with the synergistic effect of 4-bromo-butyric acid (BBA) and oleylamine (OLA) in polar solvents including aqueous solution and a possible fundamental mechanism are proposed. Monodispersed CsPbBr₃ (CPB) QDs obtained in water show high photoluminescence quantum yields (PLQYs) of 86.4 % and their PL features of CPB QDs have no significant change after being dispersed in aqueous solution for 96 h, which implies the structure of CPB QDs is unchanged. The results provide a viable design strategy to synthesize all-inorganic perovskite CPX QDs with strong stability against the attack of polar solvents and shed more light on their surface chemistry.

Sequential structural degradation of red perovskite quantum dots and its prevention by introducing iodide at a stable gradient concentration into the core-shell red perovskite quantum dots

Perovskite quantum dots (QDs) have been extensively studied as emissive materials for next-generation optoelectronics due to their outstanding optical properties; however, their structural instabilities, specifically those of red perovskite QDs, are critical obstacles in realizing operationally reliable perovskite QD-based optoelectronic devices. Accordingly, herein, we investigated the sequential degradation mechanism of red perovskite QDs upon their exposure to an electric field. Via electrical and chemical characterization, we demonstrated that degradation occurred in the following order: anion-defect-assisted halide migration, cation-defect-assisted migration of I^-/Cs⁺ ions, defective gradient I ion distribution, structural distortion, and ion transport/I₂ vaporization with defect proliferation. Among these steps, the defective gradient I ion distribution is the key process in the structural degradation of perovskite QDs. Based on our findings, we designed perovskite/SiO₂ core-shell QDs with stable gradient I concentrations. Most notably, the operational stabilities of perovskite QD-light-emitting diodes (PeLEDs) fabricated using the perovskite/SiO₂ core-shell QDs were approximately 5000 times those of the PeLEDs constructed using pristine perovskite QDs.