Increased Active Sites and Charge Transfer in the SnS2/TiO2 Heterostructure for Visible-Light-Assisted NO2 Sensing

Enhanced oxygen anions generation on Bi2S3/Sb2S3 heterostructure by visible light for trace H2S detection at room temperature

Bismuth sulfide (Bi2S3) possesses unique properties that make it a promising material for effective hydrogen sulfide (H2S) detection at room temperature. However, when exposed to light, the oxygen anions (O2-(ads)) adsorbed on the surface of Bi2S3 can react with photoinduced holes, ultimately reducing the ability to respond to H2S. In this study, Bi2S3/Sb2S3 heterostructures were synthesized, producing photoinduced oxygen anions (O2-(hv)) under visible light conditions, resulting in enhanced H2S sensing capability. The Bi2S3/Sb2S3 heterostructure sensor exhibits a two-fold increase in sensing response to 500 ppb H2S under in door light conditions relative to its performance in darkness. Additionally, the sensing response of the Bi2S3/Sb2S3 sensor (Ra/Rg= 23.3) was approximately five times higher than pure Bi2S3. The improved sensing performance of the Bi2S3/Sb2S3 heterostructures is attributable to the synergistic influence of the heterostructure configuration and light modulation, which enhances the H2S sensing performance by facilitating rapid charge transfer and increasing active sites (O2-(hv)) when exposed to visible light.

Solution-Processable Route for Large-Area Uniform 2D Semiconductor Nanofilms

The semiconductor thin film engineering technique plays a key role in the development of advanced electronics. Printing uniform nanofilms on freeform surfaces with high efficiency and low cost is significant for actual industrialization in electronics. Herein, a high-throughput colloidal printing (HTCP) strategy is reported for fabricating large-area and uniform semiconductor nanofilms on freeform surfaces. High-throughput and uniform printing rely on the balance of atomization and evaporation, as well as the introduced thermal Marangoni flows of colloidal dispersion, that suppresses outward capillary flows. Colloidal printing with in situ heating enables the fast fabrication of large-area semiconductor nanofilms on freeform surfaces, such as SiO2/Si, Al2O3, quartz glass, poly(ethylene terephthalate) (PET), Al foil, plastic tube, and Ni foam, expanding their technological applications where substrates are essential. The printed SnS2 nanofilms are integrated into thin-film semiconductor gas sensors with one of the fastest responses (8 s) while maintaining the highest sensitivity (Rg/Ra = 21) (toward 10 ppm NO2), as well as an ultralow limit of detection (LOD) of 46 ppt. The ability to print uniform semiconductor nanofilms on freeform surfaces with high-throughput promises the development of next-generation electronics with low cost and high efficiency.

Advances in 2D Materials Based Gas Sensors for Industrial Machine Olfactory Applications

The escalating development and improvement of gas sensing ability in industrial equipment, or "machine olfactory", propels the evolution of gas sensors toward enhanced sensitivity, selectivity, stability, power efficiency, cost-effectiveness, and longevity. Two-dimensional (2D) materials, distinguished by their atomic-thin profile, expansive specific surface area, remarkable mechanical strength, and surface tunability, hold significant potential for addressing the intricate challenges in gas sensing. However, a comprehensive review of 2D materials-based gas sensors for specific industrial applications is absent. This review delves into the recent advances in this field and highlights the potential applications in industrial machine olfaction. The main content encompasses industrial scenario characteristics, fundamental classification, enhancement methods, underlying mechanisms, and diverse gas sensing applications. Additionally, the challenges associated with transitioning 2D material gas sensors from laboratory development to industrialization and commercialization are addressed, and future-looking viewpoints on the evolution of next-generation intelligent gas sensory systems in the industrial sector are prospected.

Size-Dependent Response of Hydrothermally Grown SnO2 for a High-Performance NO2 Sensor and the Impact of Oxygen

A NO2 sensor with a detection limit down to the ppb level based on pristine SnO2 has been developed through a facile poly(acrylic acid)-mediated hydrothermal method. SnO2 particles of solid microsphere, hollow microsphere, and nanosphere morphologies were synthesized, with respective constitutional crystallite of size ∼2 μm in length and 10-20 nm and ∼7 nm in diameter. All sensors show great selectivity to NO2. The hollow microsphere sensor exhibits the best performance, with medium specific surface area (SSA), followed by the nanosphere sensor with the largest SSA. This is attributed to the superposition of two opposite effects on sensor response with increased SSA: more adsorption sites and fewer electrons to be taken out with overly small crystallite that may reach complete depletion. O2 is found to speed up the response and recovery times but reduce the response because O adsorbates facilitate the adsorption/desorption of NO2 thermodynamically, and the two oxidizing gases compete in harvesting electrons from SnO2. The adverse effect of humidity can be minimized by operating the sensor at 110 °C. The response of the hollow microsphere sensor to 50 ppb of NO2 is 8.8 (Rg/Ra) at room temperature, and it increases to 15.1 at 110 °C. These findings are useful for developing other oxidizing gas semiconductor sensors.

Ultrasensitive and reversible NO2 gas sensor based on SnS2/TiO2 heterostructures for room temperature applications

Nitrogen dioxide (NO2) is one of the toxic gases produced by chemical industries, power plants, and vehicles. In this work, we demonstrate an inexpensive sensing platform for NO2 detection at room temperature (RT-32 °C) based on a charge transfer mechanism. Three-dimensional hierarchical SnS2 and SnS2/mesoporous TiO2 nanocomposites were synthesized via the solvothermal method. SnS2/20 wt% mesoporous TiO2 nanocomposites sample showed 245.4% enhanced response compared to pristine SnS2. The fabricated device exhibits excellent selectivity among all other interfering gases with one-month stability. The rapid response and enhanced response achieved were obtained for the minimum concentration of 2 ppm NO2. The formation of heterojunction between SnS2 and mesoporous TiO2 has a synergetic effect, providing more active sites and porous structures for the detection of NO2 gas molecules.

Enhanced Sensing Performance of SnX Ti1-X O2 -TiX Sn1-X O2 Core-Shell Heterostructure via Increasing the Density of Unsaturated Sn and Ti Atoms

The strategy of combining different semiconductor materials is adjudged an effective approach to improve the sensing performances of semiconductor materials. However, the specific synergistic mechanism for the excellent gas-sensitive performances of composite materials has not been elucidated. Herein, a facile solvothermal method is employed to synthesize SnX Ti1-X O2 -TiX Sn1-X O2 core-shell heterostructures using SnCl4 •5H2 O and tetrabutyl titanate (TBOT) as raw materials. When the molar ratio of SnCl4 •5H2 O/TBOT is 1.8/3.0, the afforded composite exhibited the highest gas sensing performances compared with other composites prepared with other molar ratios. The enhanced sensing performance is attributed to the simultaneous incorporation of Sn and Ti ions into each other's lattice, leading to an increase in the density of unsaturated Sn and Ti atoms on the surface. Ultimately, more oxygen vacancies are formed by the unsaturated Sn and Ti atoms, which benefits electron capture and the redox reaction of adsorbed gases. Thus, the concept of increased unsaturated metal atoms and oxygen vacancy resulting from the doping of different metal ions into each other's lattice has deepened the understanding of gas sensing and the catalytic reaction mechanisms. The lattice synergy of different metals provides a pathway for the design of advanced gas-sensing materials and catalysts.

Synergy of S-vacancy and heterostructure in BiOCl/Bi2S3-x boosting room-temperature NO2 sensing

The special physicochemical properties of Bi₂S₃ nanomaterial endow it to be exceptional NO₂ sensing properties. However, sensors based on pure Bi₂S₃ cannot detect trace NO₂ at room temperature effectively due to the scanty active sites and poor charge transfer efficiency. Herein, vacancy defect and heterostructure engineering are rationally integrated to explore BiOCl/Bi₂S_3-x heterostructure with rich S vacancies to enhance NO₂ sensing performance. The optimized sensor based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructure exhibited a high response value (R_g/R_a = 29.1) to 1 ppm NO₂ at room temperature, which was about 17 times compared to the pristine Bi₂S₃. Meanwhile, the BiOCl/Bi₂S_3-x sensor also exhibited a short response time (36 s) towards 1 ppm NO₂ and a low theoretical detection limit (2 ppb). The superior response value of S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures was ascribed to the improved electron migration at the heterointerface and the additional exposed active sites caused by the S vacancies in Bi₂S_3-x. Additionally, the sensors based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures showed good long-term stability, outstanding selectivity, and good flexibility. This study offers an effective method for synergistically engineering defect and heterostructure to enhance gas sensing properties at room temperature.

Construction of a flower-like SnS2/SnO2 junction for efficient photocatalytic CO2 reduction

Photoreduction of CO2 to value-added chemicals and fuels is an attractive solution to alleviate environmental problems and energy crisis at the same time. However, engineering efficient photocatalysts with high activity and product selectivity is still challenging. Herein, we achieved three-dimensional (3D) spatial configuration design at micro-scale and heterogeneous interface construction at nano-scale on a SnS2/SnO2 composite, which featured hierarchical flower-like morphology consisted of nanosheets and type-II semiconductor structure. It behaved excellent selectivity and impressive photocatalytic CO2-to-CO performance with a yielding rate of 60.85 μmol g-1h-1, roughly 3 times higher than that of SnS2 and was in the front rank of this kind catalysts under 300 W Xe lamp illumination without using any sensitizers or noble metals. The enhanced catalytic capability could be attributed to the elaborately built structure with suitable energetic position that afforded effective separation and migration of photo-generated electron/hole pairs as well as enhanced light caption and absorption. Meanwhile, main reactive intermediates (e.g., CO2- and *COOH) were captured by in-situ Fourier transform infrared spectroscopy (FTIR), suggesting a fluent catalytic pathway on the SnS2/SnO2 platform. This work provides a new scheme to build advanced catalysts based on multiscale design and rational phase assembling.

Fabrication of r-GO/GO/α-Fe2O3/Fe2TiO5 Nanocomposite Using Natural Ilmenite and Graphite for Efficient Photocatalysis in Visible Light

Hematite (α-Fe₂O₃) and pseudobrookite (Fe₂TiO₅) suffer from poor charge transport and a high recombination effect under visible light irradiation. This study investigates the design and production of a 2D graphene-like r-GO/GO coupled α-Fe₂O₃/Fe₂TiO₅ heterojunction composite with better charge separation. It uses a simple sonochemical and hydrothermal approach followed by L-ascorbic acid chemical reduction pathway. The advantageous band offset of the α-Fe₂O₃/Fe₂TiO₅ (TF) nanocomposite between α-Fe₂O₃ and Fe₂TiO₅ forms a Type-II heterojunction at the Fe₂O₃/Fe₂TiO₅ interface, which efficiently promotes electron-hole separation. Importantly, very corrosive acid leachate resulting from the hydrochloric acid leaching of ilmenite sand, was successfully exploited to fabricate α-Fe₂O₃/Fe₂TiO₅ heterojunction. In this paper, a straightforward synthesis strategy was employed to create 2D graphene-like reduced graphene oxide (r-GO) from Ceylon graphite. The two-step process comprises oxidation of graphite to graphene oxide (GO) using the improved Hummer's method, followed by controlled reduction of GO to r-GO using L-ascorbic acid. Before the reduction of GO to the r-GO, the surface of TF heterojunction was coupled with GO and was allowed for the controlled L-ascorbic acid reduction to yield r-GO/GO/α-Fe₂O₃/Fe₂TiO₅ nanocomposite. Under visible light illumination, the photocatalytic performance of the 30% GO/TF loaded composite material greatly improved (1240 Wcm^-2). Field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM) examined the morphological characteristics of fabricated composites. X-ray photoelectron spectroscopy (XPS), Raman, X-ray diffraction (XRD), X-ray fluorescence (XRF), and diffuse reflectance spectroscopy (DRS) served to analyze the structural features of the produced composites.

Light-assisted room temperature gas sensing performance and mechanism of direct Z-scheme MoS2/SnO2 crystal faceted heterojunctions

Light assistance and construction of heterojunctions are both promising means to improve the room temperature gas sensing performance of MoS₂ recently. However, enhancing the separation efficiency of photo-generated carriers at interface and adsorption ability of surface have become the bottleneck problem to further improve the room temperature gas sensing performance of MoS₂-based heterojunctions under light assistance. In the present study, a novel direct Z-scheme MoS_2/SnO₂ heterojunction was designed through crystal facets engineering and its room temperature gas sensing properties under light assistance was studied. It was found that the heterojunction showed outstanding room temperature NO₂ sensing performance with a high response of 208.66 toward 10 ppm NO_2, together with excellent recovery characteristics and selectivity. The gas sensing mechanism study suggested that high-energy {221} crystal facets of SnO₂ and MoS₂ directly formed Z-scheme heterojunction, which could greatly improve the separation efficiency of photo-generated carriers with high redox capacity. Moreover, {221} facets greatly enhanced adsorption ability towards NO₂. This work not only opens up the application of Z-scheme heterojunctions in gas sensing, which will greatly promotes the development of room temperature light-assisted gas sensors, but also provides a new idea for the construction of direct Z-scheme heterojunctions through crystal facets engineering.

Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

Oxygen vacancy (V_O) is a kind of primary point defect that extensively exists in semiconductor metal oxides (SMOs). Owing to some of its inherent qualities, an artificial manipulation of V_O content in one material has evolved into a hot research field, which is deemed to be capable of modulating band structures and surface characteristics of SMOs. Specific to the gas-sensing area, V_O engineering of sensing materials has become an effective means in enhancing sensor response and inducing light-enhanced sensing. In this work, a high-efficiency microwave hydrothermal treatment was utilized to prepare a V_O-rich ZnO sample without additional reagents. The X-ray photoelectron spectroscopy test revealed a significant increase in V_O proportion, which was from 9.21% in commercial ZnO to 36.27% in synthesized V_O-rich ZnO possessing three-dimensional and air-permeable microstructures. The subsequent UV-vis-NIR absorption and photoluminescence spectroscopy indicated an extension absorption in the visible region and band gap reduction of V_O-rich ZnO. It turned out that the V_O-rich ZnO-based sensor exhibited a considerable response of 63% toward 1 ppm HCHO at room temperature (RT, 25 °C) under visible light irradiation. Particularly, the response/recovery time was only 32/20 s for 1 ppm HCHO and further shortened to 10/5 s for 10 ppm HCHO, which was an excellent performance and comparable to most sensors working at high temperatures. The results in this work strongly suggested the availability of V_O engineering and also provided a meaningful candidate for researchers to develop high-performance RT sensors detecting volatile organic compounds.

Bi2S3/ZnS heterostructures for H2S sensing in the dark: the synergy of increased surface-adsorbed oxygen and charge transfer

Bi2S3/ZnS heterostructures with increased surface-adsorbed oxygen and charge transfer in the dark were designed and used to achieve ppb level H2S detection at room temperature.